1 | Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate |
2 | ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method |
3 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
4 | Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors |
5 | Band alignment of Al2O3 with (-201) β-Ga2O3 |
6 | High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits |
7 | Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells |
8 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
9 | Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide |
10 | Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques |
11 | Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition |
12 | Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement |
13 | Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes |
14 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
15 | Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization |
16 | Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating |
17 | Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants |
18 | Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate |
19 | Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source |
20 | Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films |
21 | Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films |
22 | Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method |
23 | Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions |
24 | Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide |
25 | Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells |
26 | Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride |
27 | The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD |
28 | Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon |
29 | Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition |
30 | Spectroscopy and control of near-surface defects in conductive thin film ZnO |
31 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
32 | Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition |
33 | Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition |
34 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
35 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
36 | Growth Temperature Dependence of TiO2 Thin Films Prepared by Using Plasma-Enhanced Atomic Layer Deposition Method |
37 | Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics |
38 | Theoretical Understanding of the Reaction Mechanism of SiO2 Atomic Layer Deposition |
39 | Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition |
40 | Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition |
41 | SnO2 nanotubes fabricated using electrospinning and atomic layer deposition and their gas sensing performance |
42 | Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment |
43 | Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride |
44 | Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD |
45 | Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films |
46 | Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene |
47 | Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition |
48 | Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD |
49 | Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition |
50 | Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries |
51 | Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon |
52 | Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition |
53 | Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations |
54 | Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen |
55 | Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops |
56 | Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation |
57 | Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs |
58 | Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications |
59 | X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect |
60 | Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films |
61 | Atomic Layer Deposition of the Conductive Delafossite PtCoO2 |
62 | Capacitance spectroscopy of gate-defined electronic lattices |
63 | Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments |
64 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
65 | Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions |
66 | Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V |
67 | Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer |
68 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
69 | Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure |
70 | Applications of nanoNewton dielectrophoretic forces using atomic layer deposited oxides for microfluidic sample preparation and proteomics |
71 | Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries |
72 | Plasma enhanced atomic layer deposited silicon dioxide with divalent Si precursor [N,N'-tert-butyl-1,1-dimethylethylenediamine silylene] |
73 | The Effects of an O2 Plasma on the Optical Properties of Atomic Layer Deposited ZnO |
74 | Room-Temperature Atomic Layer Deposition of Platinum |
75 | Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer |
76 | Energy-enhanced atomic layer deposition for more process and precursor versatility |
77 | Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition |
78 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
79 | Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma |
80 | Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition |
81 | Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering |
82 | Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer |
83 | Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics |
84 | Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures |
85 | Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells |
86 | Water Vapor Treatment of Low-Temperature Deposited SnO2 Electron Selective Layers for Efficient Flexible Perovskite Solar Cells |
87 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
88 | The size effect of titania-supported Pt nanoparticles on the electrocatalytic activity towards methanol oxidation reaction primarily via the bifunctional mechanism |
89 | Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors |
90 | A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition |
91 | Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization |
92 | Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition |
93 | Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors |
94 | Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions |
95 | Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting |
96 | Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy |
97 | Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage |
98 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
99 | Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier |
100 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
101 | Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma |
102 | Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions |
103 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
104 | Innovative remote plasma source for atomic layer deposition for GaN devices |
105 | Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million |
106 | Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers |
107 | Densification of Thin Aluminum Oxide Films by Thermal Treatments |
108 | Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction |
109 | Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films |
110 | Single-Cell Photonic Nanocavity Probes |
111 | Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications |
112 | Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition |
113 | Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide |
114 | Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma |
115 | ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium |
116 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
117 | In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices |
118 | Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features |
119 | Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques |
120 | Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing |
121 | Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition |
122 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
123 | Optical properties and bandgap evolution of ALD HfSiOx films |
124 | Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition |
125 | Passivation effects of atomic-layer-deposited aluminum oxide |
126 | Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor |
127 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
128 | Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle |
129 | Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma |
130 | Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces |
131 | The important role of water in growth of monolayer transition metal dichalcogenides |
132 | XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films |
133 | XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films |
134 | Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface |
135 | Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition |
136 | Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte |
137 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
138 | Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating |
139 | ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition: Material Properties Within and Outside the "Atomic Layer Deposition Window" |
140 | Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors |
141 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
142 | Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition |
143 | Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3 |
144 | Optical in situ monitoring of plasma-enhanced atomic layer deposition process |
145 | Spectral analysis of sidewall roughness during resist-core self-aligned double patterning integration |
146 | Index matching at the nanoscale: light scattering by core-shell Si/SiOx nanowires |
147 | Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system |
148 | Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells |
149 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
150 | Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition |
151 | Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source |
152 | Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2 |
153 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
154 | Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension |
155 | Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition |
156 | IrO2 Nanodot Formation by Plasma Enhanced Atomic Layer Deposition as a Charge Storage Layer |
157 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
158 | Using top graphene layer as sacrificial protection during dielectric atomic layer deposition |
159 | All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process |
160 | Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si |
161 | Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy |
162 | Exploiting atomic layer deposition for fabricating sub-10nm X-ray lenses |
163 | Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides |
164 | Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications |
165 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
166 | Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers |
167 | Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene |
168 | Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors |
169 | Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters |
170 | Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry |
171 | Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition |
172 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
173 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
174 | Nanoscale Encapsulation of Hybrid Perovskites Using Hybrid Atomic Layer Deposition |
175 | Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition |
176 | Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors |
177 | Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1-x)2O3 for x = 0.25-0.74 |
178 | Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si |
179 | Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension |
180 | Atomic layer deposition of Co3O4 on carbon nanotubes/carbon cloth for high-capacitance and ultrastable supercapacitor electrode |
181 | Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing |
182 | Propagation Effects in Carbon Nanoelectronics |
183 | Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition |
184 | Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation |
185 | Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition |
186 | Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells |
187 | Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition |
188 | On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR |
189 | Plasma-enhanced atomic layer deposition of BaTiO3 |
190 | Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 |
191 | Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition |
192 | The role of plasma in plasma-enhanced atomic layer deposition of crystalline films |
193 | Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications |
194 | Plasma enhanced atomic layer deposition of Ga2O3 thin films |
195 | Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2 |
196 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
197 | Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures |
198 | Very High Refractive Index Transition Metal Dichalcogenide Photonic Conformal Coatings by Conversion of ALD Metal Oxides |
199 | Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures |
200 | Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO2 Studied by Gas-Phase Infrared and Optical Emission Spectroscopy |
201 | Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3 |
202 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
203 | Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition |
204 | Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors |
205 | Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects |
206 | Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures |
207 | Optical properties and bandgap evolution of ALD HfSiOx films |
208 | High-resolution, high-aspect-ratio iridium-nickel composite nanoimprint molds |
209 | (Invited) Characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 Capacitors |
210 | RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma |
211 | Catalytic Combustion and Dehydrogenation Reactions during Atomic Layer Deposition of Platinum |
212 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
213 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
214 | Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas |
215 | Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma |
216 | Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films |
217 | Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance |
218 | Ultrathin Surface Coating Enables the Stable Sodium Metal Anode |
219 | Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties |
220 | Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD |
221 | Effect of Crystal Structure and Grain Size on Photo-Catalytic Activities of Remote-Plasma Atomic Layer Deposited Titanium Oxide Thin Film |
222 | Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation |
223 | Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting |
224 | Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing |
225 | Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition |
226 | Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition |
227 | Characteristics of HfO2 thin films grown by plasma atomic layer deposition |
228 | Hafnia and alumina on sulphur passivated germanium |
229 | Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2 |
230 | Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO2 and TiO2 |
231 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
232 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
233 | Patterned deposition by plasma enhanced spatial atomic layer deposition |
234 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films |
235 | Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition |
236 | Ferroelectricity in hafnia controlled via surface electrochemical state |
237 | 'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition |
238 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
239 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
240 | Modal properties of a strip-loaded horizontal slot waveguide |
241 | Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions |
242 | Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films |
243 | In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3 |
244 | Plasma-induced sub-10nm Au-SnO2-In2O3 heterostructures fabricated by atomic layer deposition for highly sensitive ethanol detection on ppm level |
245 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
246 | Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology |
247 | Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks |
248 | Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD) |
249 | Damage evaluation in graphene underlying atomic layer deposition dielectrics |
250 | Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices |
251 | MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion |
252 | Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition |
253 | Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD |
254 | PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads |
255 | Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition |
256 | Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices |
257 | Impact of interface materials on side permeation in indirect encapsulation of organic electronics |
258 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
259 | Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO2 and TiO2 |
260 | Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures |
261 | Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection |
262 | Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals |
263 | Large area, patterned growth of 2D MoS2 and lateral MoS2-WS2 heterostructures for nano- and opto-electronic applications |
264 | High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical |
265 | Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches |
266 | PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads |
267 | Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films |
268 | On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation |
269 | Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition |
270 | A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer |
271 | High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films |
272 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
273 | Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns |
274 | Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer |
275 | Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment |
276 | Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD |
277 | Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET |
278 | On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR |
279 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
280 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
281 | Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition |
282 | Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy |
283 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
284 | Lithium-Iron (III) Fluoride Battery with Double Surface Protection |
285 | Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma |
286 | Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors |
287 | Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells |
288 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
289 | Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition |
290 | Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma |
291 | Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells |
292 | Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries |
293 | Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene |
294 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
295 | Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2 |
296 | Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes |
297 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
298 | Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition |
299 | Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors |
300 | Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate |
301 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
302 | Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks |
303 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
304 | Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime |
305 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
306 | TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films |
307 | Plasma-induced sub-10nm Au-SnO2-In2O3 heterostructures fabricated by atomic layer deposition for highly sensitive ethanol detection on ppm level |
308 | Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition |
309 | Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition |
310 | Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides |
311 | Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries |
312 | Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique |
313 | Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics |
314 | Improved understanding of recombination at the Si/Al2O3 interface |
315 | ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition |
316 | Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition |
317 | Controlled erbium incorporation and photoluminescence of Er-doped Y2O3 |
318 | Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition |
319 | Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma |
320 | Influence of Precursor Density and Conversion Time on the Orientation of Vapor-Deposited ZIF-8 |
321 | Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
322 | Atomic Layer Deposition of Ni-Co-O Thin-Film Electrodes for Solid-State LIBs and the Influence of Chemical Composition on Overcapacity |
323 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
324 | PEALD ZrO2 Films Deposition on TiN and Si Substrates |
325 | Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer |
326 | Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material |
327 | Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures |
328 | N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes |
329 | Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries |
330 | Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO |
331 | Sub-10-nm ferroelectric Gd-doped HfO2 layers |
332 | A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology |
333 | Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films |
334 | Plasma-Enhanced Atomic Layer Deposition of Zirconium Oxide Thin Films and Its Application to Solid Oxide Fuel Cells |
335 | Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors |
336 | HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition |
337 | Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect? |
338 | Anti-stiction coating for mechanically tunable photonic crystal devices |
339 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
340 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
341 | Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries |
342 | Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures |
343 | Thermal conductivity of ultrathin BaTiO3 films grown by plasma-assisted atomic layer deposition |
344 | Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition |
345 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
346 | Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping |
347 | Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers |
348 | Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process |
349 | Atomic layer deposition of YMnO3 thin films |
350 | Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition |
351 | High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates |
352 | Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications |
353 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
354 | 46-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor |
355 | Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System |
356 | Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications |
357 | Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition |
358 | The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition |
359 | Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD |
360 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film |
361 | Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon |
362 | Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials |
363 | Nonvolatile Capacitive Crossbar Array for In-Memory Computing |
364 | Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition |
365 | Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal |
366 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor |
367 | In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition |
368 | Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources |
369 | Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes |
370 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
371 | Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures |
372 | Bipolar resistive switching in amorphous titanium oxide thin film |
373 | Highly efficient and bending durable perovskite solar cells: toward a wearable power source |
374 | Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis |
375 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
376 | Gate Insulator for High Mobility Oxide TFT |
377 | Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition |
378 | Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess |
379 | The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges |
380 | The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges |
381 | Gas sensing properties in epitaxial SnO2 films grown on TiO2 single crystals with various orientations |
382 | Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3 |
383 | Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage |
384 | Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition |
385 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
386 | Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications |
387 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
388 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
389 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
390 | Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films |
391 | Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material |
392 | Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma |
393 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
394 | Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications |
395 | Comparative study of ALD SiO2 thin films for optical applications |
396 | Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment |
397 | DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air |
398 | Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition |
399 | Designing high performance precursors for atomic layer deposition of silicon oxide |
400 | Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks |
401 | Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2 |
402 | Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma |
403 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
404 | Atomic Layer Deposition of Gold Metal |
405 | Electrically Excited Plasmonic Nanoruler for Biomolecule Detection |
406 | High-efficiency embedded transmission grating |
407 | Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth |
408 | Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions |
409 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
410 | Effects of TiO2 Interfacial Atomic Layers on Device Performances and Exciton Dynamics in ZnO Nanorod Polymer Solar Cells |
411 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
412 | Effect of plasma power on the structural properties of tin oxide prepared by plasma-enhanced atomic layer deposition |
413 | Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 |
414 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
415 | Annealing behavior of ferroelectric Si-doped HfO2 thin films |
416 | The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation |
417 | Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method |
418 | Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor |
419 | Effect of anode morphology on the performance of thin film solid oxide fuel cell with PEALD YSZ electrolyte |
420 | Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells |
421 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
422 | Optical properties and bandgap evolution of ALD HfSiOx films |
423 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
424 | Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements |
425 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
426 | The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition |
427 | Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition |
428 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
429 | Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN |
430 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
431 | Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing |
432 | Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
433 | Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time |
434 | Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films |
435 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
436 | Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation |
437 | Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme |
438 | Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition |
439 | Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application |
440 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
441 | Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries |
442 | Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries |
443 | Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3 |
444 | Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films |
445 | Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers |
446 | Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy |
447 | Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices |
448 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
449 | Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications |
450 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
451 | Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone |
452 | Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor |
453 | Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing |
454 | Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors |
455 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
456 | Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma |
457 | Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials |
458 | Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy |
459 | Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps |
460 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
461 | Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy |
462 | An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor |
463 | Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition |
464 | Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition |
465 | Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity |
466 | Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition |
467 | Charge effects of ultrafine FET with nanodot type floating gate |
468 | Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes |
469 | Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas |
470 | Hafnia and alumina on sulphur passivated germanium |
471 | Transient characterization of the electroforming process in TiO2 based resistive switching devices |
472 | Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications |
473 | Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy |
474 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
475 | Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films |
476 | Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films |
477 | In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors |
478 | Using top graphene layer as sacrificial protection during dielectric atomic layer deposition |
479 | In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics |
480 | Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge |
481 | Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode |
482 | Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD |
483 | Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries |
484 | Photovoltaic Rudorffites: Lead-Free Silver Bismuth Halides Alternative to Hybrid Lead Halide Perovskites |
485 | Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3 |
486 | Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics |
487 | Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor |
488 | Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth |
489 | Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions |
490 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
491 | Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
492 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
493 | Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer |
494 | Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor |
495 | Systematic efficiency study of line-doubled zone plates |
496 | Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants |
497 | Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon |
498 | Bias stress and humidity exposure of amorphous InGaZnO thin-film transistors with atomic layer deposited Al2O3 passivation using dimethylaluminum hydride at 200°C |
499 | A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD |
500 | Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition |
501 | Composite materials and nanoporous thin layers made by atomic layer deposition |
502 | Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor |
503 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
504 | High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films |
505 | Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition |
506 | Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors |
507 | Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition |
508 | Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD |
509 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
510 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
511 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
512 | Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors |
513 | Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity |
514 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
515 | Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights |
516 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
517 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
518 | Tuning size and coverage of Pd nanoparticles using atomic layer deposition |
519 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
520 | Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition |
521 | Alloyed 2D Metal-Semiconductor Atomic Layer Junctions |
522 | In-gap states in titanium dioxide and oxynitride atomic layer deposited films |
523 | Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium |
524 | High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition |
525 | Plasma enhanced atomic layer deposition and laser plasma deposition of ultra-thin ZnO films for Schottky barrier devices |
526 | Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition |
527 | ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition |
528 | On the role of nanoporosity in controlling the performance of moisture permeation barrier layers |
529 | Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma |
530 | Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon |
531 | Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing |
532 | Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition |
533 | Electrical characterization of the slow boron oxygen defect component in Czochralski silicon |
534 | Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition |
535 | Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current |
536 | Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition |
537 | Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate |
538 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
539 | Employing Overlayers To Improve the Performance of Cu2BaSnS4 Thin Film based Photoelectrochemical Water Reduction Devices |
540 | Localized defect states and charge trapping in atomic layer deposited-Al2O3 films |
541 | Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition |
542 | Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition |
543 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
544 | Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach |
545 | Electrochemical Activation of Atomic Layer-Deposited Cobalt Phosphate Electrocatalysts for Water Oxidation |
546 | Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation |
547 | A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition |
548 | High-Reflective Coatings For Ground and Space Based Applications |
549 | Surface and sensing properties of PE-ALD SnO2 thin film |
550 | An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD |
551 | Highly reflective polymeric substrates functionalized utilizing atomic layer deposition |
552 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
553 | Topographically selective deposition |
554 | Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors |
555 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
556 | Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films |
557 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
558 | Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks |
559 | Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer |
560 | Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping |
561 | Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition |
562 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
563 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
564 | Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length |
565 | Residual stress study of thin films deposited by atomic layer deposition |
566 | Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper |
567 | Low temperature temporal and spatial atomic layer deposition of TiO2 films |
568 | Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement |
569 | Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries |
570 | Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating |
571 | Shuffling Atomic Layer Deposition Gas Sequences to Modulate Bimetallic Thin Films and Nanoparticle Properties |
572 | Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides |
573 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
574 | Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration |
575 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
576 | Development and characterization of an atmospheric pressure plasma reactor compatible with spatial ALD |
577 | Lithium-Iron (III) Fluoride Battery with Double Surface Protection |
578 | Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition |
579 | Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells |
580 | Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction |
581 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
582 | Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition |
583 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
584 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
585 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
586 | HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition |
587 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
588 | Properties of HfAlO film deposited by plasma enhanced atomic layer deposition |
589 | Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films |
590 | Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films |
591 | Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe |
592 | Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications |
593 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
594 | Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy |
595 | MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion |
596 | Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium |
597 | Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells |
598 | Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature |
599 | High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films |
600 | Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon |
601 | Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors |
602 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
603 | Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment |
604 | Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System |
605 | Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation |
606 | PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases |
607 | Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic |
608 | Room-temperature and high-quality HfO2/SiO2 gate stacked film grown by neutral beam enhanced atomic layer deposition |
609 | Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions |
610 | Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification |
611 | Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System |
612 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor |
613 | A multifunctional biphasic water splitting catalyst tailored for integration with high-performance semiconductor photoanodes |
614 | Impact of interface materials on side permeation in indirect encapsulation of organic electronics |
615 | Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells |
616 | Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3 |
617 | Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique |
618 | Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries |
619 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
620 | Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements |
621 | Opportunities of Atomic Layer Deposition for Perovskite Solar Cells |
622 | 'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition |
623 | On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies |
624 | Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating |
625 | Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process |
626 | Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition |
627 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
628 | Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3 |
629 | Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors |
630 | Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices |
631 | Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films |
632 | Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition |
633 | Energy-enhanced atomic layer deposition for more process and precursor versatility |
634 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
635 | Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition |
636 | Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells |
637 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
638 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
639 | Tube-type plasma-enhanced atomic layer deposition of aluminum oxide: Enabling record lab performance for the industry with demonstrated cell efficiencies >24% |
640 | Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition |
641 | Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation |
642 | Co/CoP Nanoparticles Encapsulated Within N, P-Doped Carbon Nanotubes on Nanoporous Metal-Organic Framework Nanosheets for Oxygen Reduction and Oxygen Evolution Reactions |
643 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
644 | Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application |
645 | Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition |
646 | Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation |
647 | Layer-controlled and atomically thin WS2 films prepared by sulfurization of atomic-layer-deposited WO3 films |
648 | Atomic scale surface modification of TiO2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis |
649 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
650 | Energy-enhanced atomic layer deposition for more process and precursor versatility |
651 | Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge |
652 | Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition |
653 | Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method |
654 | Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET |
655 | Fixed-Gap Tunnel Junction for Reading DNA Nucleotides |
656 | Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers |
657 | Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions |
658 | Thermal and plasma enhanced atomic layer deposition of ultrathin TiO2 on silicon from amide and alkoxide precursors: growth chemistry and photoelectrochemical performance |
659 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
660 | Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses |
661 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
662 | All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process |
663 | Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition |
664 | Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma |
665 | Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition |
666 | Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC) |
667 | New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell |
668 | The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells |
669 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
670 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
671 | Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source |
672 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
673 | Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films |
674 | Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4 |
675 | Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures |
676 | Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering |
677 | Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources |
678 | Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition |
679 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
680 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
681 | Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition |
682 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
683 | Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors |
684 | Influence of plasma power on deposition mechanism and structural properties of MoOx thin films by plasma enhanced atomic layer deposition |
685 | Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells |
686 | Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition |
687 | Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices |
688 | Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure |
689 | Controlled erbium incorporation and photoluminescence of Er-doped Y2O3 |
690 | Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application |
691 | First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina |
692 | Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition |
693 | Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures |
694 | Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure |
695 | Flexible Perovskite Photovoltaic Modules and Solar Cells Based on Atomic Layer Deposited Compact Layers and UV-Irradiated TiO2 Scaffolds on Plastic Substrates |
696 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
697 | Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition |
698 | Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma |
699 | Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature |
700 | Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition |
701 | Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source |
702 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
703 | Simultaneous scanning tunneling microscopy and synchrotron X-ray measurements in a gas environment |
704 | On the role of nanoporosity in controlling the performance of moisture permeation barrier layers |
705 | Dynamic tuning of plasmon resonance in the visible using graphene |
706 | Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers |
707 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
708 | Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices |
709 | Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries |
710 | Toward reliable MIS- and MOS-gate structures for GaN lateral power devices |
711 | Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition |
712 | Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma |
713 | Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces |
714 | On the equilibrium concentration of boron-oxygen defects in crystalline silicon |
715 | Remote Plasma Atomic Layer Deposition of Thin Films of Electrochemically Active LiCoO2 |
716 | Trilayer Tunnel Selectors for Memristor Memory Cells |
717 | Plasma enhanced atomic layer deposition of Fe2O3 thin films |
718 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
719 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
720 | Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing |
721 | The effects of layering in ferroelectric Si-doped HfO2 thin films |
722 | Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films |
723 | Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon |
724 | Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2 |
725 | Lithium-Iron (III) Fluoride Battery with Double Surface Protection |
726 | Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure |
727 | Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers |
728 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
729 | Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates |
730 | From Precursor Chemistry to Gas Sensors: Plasma-Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications |
731 | Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide |
732 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
733 | Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films |
734 | Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact |
735 | Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics |
736 | Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition |
737 | Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware |
738 | High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3 |
739 | Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs |
740 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
741 | Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film |
742 | Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2 |
743 | Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals |
744 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
745 | Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition |
746 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
747 | Macro-conformality of coatings deposited using high-speed spatial plasma-enhanced atomic layer deposition |
748 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
749 | Fiber-matrix interface reinforcement using Atomic Layer Deposition |
750 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
751 | Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application |
752 | Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films |
753 | Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content |
754 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
755 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
756 | Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma |
757 | Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01) |
758 | Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting |
759 | Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma |
760 | Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells |
761 | Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators |
762 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
763 | Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide |
764 | AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD |
765 | Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption |
766 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
767 | Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition |
768 | The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition |
769 | Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition |
770 | Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2 |
771 | MANOS performance dependence on ALD Al2O3 oxidation source |
772 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
773 | Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films |
774 | Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories |
775 | Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells |
776 | ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent |
777 | Atomic layer deposition of titanium dioxide using titanium tetrachloride and titanium tetraisopropoxide as precursors |
778 | Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches |
779 | Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy |
780 | Improvement of Gas-Sensing Performance of Large-Area Tungsten Disulfide Nanosheets by Surface Functionalization |
781 | Optimization of Y2O3 dopant concentration of yttria stabilized zirconia thin film electrolyte prepared by plasma enhanced atomic layer deposition for high performance thin film solid oxide fuel cells |
782 | Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films |
783 | Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films |
784 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
785 | Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition |
786 | Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions |
787 | Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1-x)2O3 |
788 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
789 | On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies |
790 | Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor |
791 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
792 | Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor |
793 | Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN |
794 | Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition |
795 | Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes |
796 | Residual stress study of thin films deposited by atomic layer deposition |
797 | On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies |
798 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
799 | Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries |
800 | Flexible, light trapping substrates for organic photovoltaics |
801 | Experimental verification of electro-refractive phase modulation in graphene |
802 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
803 | Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications |
804 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
805 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
806 | Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor |
807 | Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition |
808 | Optical display film as flexible and light trapping substrate for organic photovoltaics |
809 | Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics |
810 | Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS |
811 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
812 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
813 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
814 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
815 | Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon |
816 | Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD) |
817 | Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition |
818 | Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates |
819 | Optical and Electrical Properties of TixSi1-xOy Films |
820 | Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells |
821 | Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition |
822 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
823 | Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon |
824 | Band alignment of atomic layer deposited TiO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy |
825 | Thickness and Morphology Dependent Electrical Properties of ALD-Synthesized MoS2 FETs |
826 | Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes |
827 | Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition |
828 | Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers |
829 | Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition |
830 | Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting |
831 | Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors |
832 | The "Pure Marriage" between 3D Printing and Well-Ordered Nanoarrays by Using PEALD Assisted Hydrothermal Surface Engineering |
833 | Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C |
834 | Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 |
835 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
836 | Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition |
837 | Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD |
838 | Internal Photoemission Spectroscopy Measurements of the Energy Barrier Heights between ALD SiO2 and Ta-Based Amorphous Metals |
839 | Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices |
840 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
841 | The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures |
842 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
843 | Atomic layer deposition of metal-oxide thin films on cellulose fibers |
844 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
845 | In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd |
846 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
847 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
848 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
849 | Large area, patterned growth of 2D MoS2 and lateral MoS2-WS2 heterostructures for nano- and opto-electronic applications |
850 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
851 | Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices |
852 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
853 | Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell |
854 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
855 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
856 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
857 | Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors |
858 | Atomic Layer Deposition of Ni-Co-O Thin-Film Electrodes for Solid-State LIBs and the Influence of Chemical Composition on Overcapacity |
859 | Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1-x)2O3 |
860 | Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors |
861 | Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance |
862 | Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays |
863 | Impedance spectroscopy analysis on the effects of TiO2 interfacial atomic layers in ZnO nanorod polymer solar cells: Effects of interfacial charge extraction on diffusion and recombination |
864 | Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers |
865 | Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry |
866 | Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition |
867 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
868 | Atomic structure of conducting nanofilaments in TiO2 resistive switching memory |
869 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
870 | Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition |
871 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
872 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
873 | Optimization of the Surface Structure on Black Silicon for Surface Passivation |
874 | A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition |
875 | Molybdenum Disulfide Catalytic Coatings via Atomic Layer Deposition for Solar Hydrogen Production from Copper Gallium Diselenide Photocathodes |
876 | Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor |
877 | Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3 |
878 | Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells |
879 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
880 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
881 | Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices |
882 | In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition |
883 | Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell |
884 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
885 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide |
886 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
887 | Half-wave phase retarder working in transmission around 630nm realized by atomic layer deposition of sub-wavelength gratings |
888 | Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer |
889 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
890 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
891 | Atomic Layer Deposition of Ni-Co-O Thin-Film Electrodes for Solid-State LIBs and the Influence of Chemical Composition on Overcapacity |
892 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
893 | Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range |
894 | Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C |
895 | Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant |
896 | Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium |
897 | Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection |
898 | Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate |
899 | The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition |
900 | Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique |
901 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
902 | Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents |
903 | Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods |
904 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
905 | In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics |
906 | Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge |
907 | Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition |
908 | Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells |
909 | Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition |
910 | Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations |
911 | Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition |
912 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
913 | Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation |
914 | Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches |
915 | Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs |
916 | Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma |
917 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
918 | Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric |
919 | The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices |
920 | Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
921 | Growth of Bi2O3 Films by Thermal- and Plasma-Enhanced Atomic Layer Deposition Monitored with Real-Time Spectroscopic Ellipsometry for Photocatalytic Water Splitting |
922 | Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics |
923 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
924 | Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor |
925 | Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers |
926 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
927 | Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition |
928 | High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition |
929 | Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC |
930 | Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric |
931 | Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN |
932 | A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density |
933 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
934 | Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors |
935 | Improved film quality of plasma enhanced atomic layer deposition SiO2 using plasma treatment cycle |
936 | An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon |
937 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
938 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
939 | Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
940 | Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films |
941 | Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors |
942 | The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides |
943 | High-efficiency embedded transmission grating |
944 | A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz |
945 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
946 | Sub-7-nm textured ZrO2 with giant ferroelectricity |
947 | Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries |
948 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
949 | Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices |
950 | Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 |
951 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
952 | Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources |
953 | Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure |
954 | Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD |
955 | Epitaxial 1D electron transport layers for high-performance perovskite solar cells |
956 | Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement |
957 | A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD |
958 | Efficient Catalytic Microreactors with Atomic-Layer-Deposited Platinum Nanoparticles on Oxide Support |
959 | Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact |
960 | Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition |
961 | Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition |
962 | Nonvolatile Capacitive Crossbar Array for In-Memory Computing |
963 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
964 | Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis(ethylcyclopentadienyl)magnesium precursor |
965 | Properties of plasma enhanced atomic layer deposited ruthenium thin films from Ru(EtCp)2 |
966 | Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution |
967 | Flexible Memristive Memory Array on Plastic Substrates |
968 | Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2 |
969 | Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition |
970 | Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor |
971 | Multiplexed actuation using ultra dielectrophoresis for proteomics applications: a comprehensive electrical and electrothermal design methodology |
972 | Electrochemical Performance of Lithium-Nickel Oxide Thin Films Obtained with Use of Atomic Layer Deposition |
973 | Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories |
974 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
975 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments |
976 | Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition |
977 | Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium |
978 | Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide |
979 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
980 | Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films |
981 | α-Ga2O3 grown by low temperature atomic layer deposition on sapphire |
982 | Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma |
983 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
984 | PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen |
985 | Characteristics of TiO2 Films Prepared by ALD With and Without Plasma |
986 | Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application |
987 | ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications |
988 | Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface |
989 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
990 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
991 | The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain |
992 | Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications |
993 | Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition |
994 | Optical and Electrical Properties of AlxTi1-xO Films |
995 | Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma |
996 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
997 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
998 | The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain |
999 | Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries |
1000 | Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration |
1001 | Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition |
1002 | Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy |
1003 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
1004 | Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates |
1005 | Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods |
1006 | Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films |
1007 | In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells |
1008 | Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal |
1009 | Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors |
1010 | Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation |
1011 | Advances in the fabrication of graphene transistors on flexible substrates |
1012 | Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition |
1013 | DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors |
1014 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
1015 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
1016 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
1017 | Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition |
1018 | Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors |
1019 | Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate |
1020 | Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection |
1021 | A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films |
1022 | Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement |
1023 | Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor |
1024 | Damage evaluation in graphene underlying atomic layer deposition dielectrics |
1025 | Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition |
1026 | Measurement and compensation of misalignment in double-sided hard X-ray Fresnel zone plates |
1027 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
1028 | Plasma-assisted atomic layer deposition of nickel oxide as hole transport layer for hybrid perovskite solar cells |
1029 | Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD |
1030 | Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3 |
1031 | A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems |
1032 | Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition |
1033 | Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition |
1034 | Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3 |
1035 | Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition |
1036 | Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center |
1037 | Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition |
1038 | Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors |
1039 | Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition |
1040 | Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells |
1041 | Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties |
1042 | Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition |
1043 | Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications |
1044 | Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition |
1045 | Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5 |
1046 | Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2 |
1047 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
1048 | In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd |
1049 | Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C |
1050 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
1051 | Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2 |
1052 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
1053 | Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma |
1054 | Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy |
1055 | Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate |
1056 | 3D structure evolution using metastable atomic layer deposition based on planar silver templates |
1057 | Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition |
1058 | Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy |
1059 | Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices |
1060 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
1061 | Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3 |
1062 | Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries |
1063 | Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films |
1064 | Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure |
1065 | Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties |
1066 | Fabrication of nanoporous membranes for tuning microbial interactions and biochemical reactions |
1067 | Top-down fabricated ZnO nanowire transistors for application in biosensors |
1068 | Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range |
1069 | Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene |
1070 | Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy |
1071 | Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes |
1072 | Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy |
1073 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
1074 | Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma |
1075 | Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors |
1076 | Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor |
1077 | In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition |
1078 | Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors |
1079 | Efficient Modification of Metal Oxide Surfaces with Phosphonic Acids by Spray Coating |
1080 | The important role of water in growth of monolayer transition metal dichalcogenides |
1081 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
1082 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
1083 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
1084 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
1085 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
1086 | Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy |
1087 | Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions |
1088 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
1089 | Growth of silica nanowires in vacuum |
1090 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
1091 | Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate |
1092 | High-Reflective Coatings For Ground and Space Based Applications |
1093 | Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy |
1094 | Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4 |
1095 | Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor |
1096 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
1097 | Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties |
1098 | Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films |
1099 | Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications |
1100 | Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration |
1101 | Hysteresis behaviour of top-down fabricated ZnO nanowire transistors |
1102 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
1103 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
1104 | Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy |
1105 | Electrochemical Activation of Atomic Layer-Deposited Cobalt Phosphate Electrocatalysts for Water Oxidation |
1106 | Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets |
1107 | Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition |
1108 | Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques |
1109 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
1110 | Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2 |
1111 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
1112 | Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation |
1113 | Antireflection In2O3 coatings of self-organized TiO2 nanotube layers prepared by atomic layer deposition |
1114 | Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability |
1115 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
1116 | Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition |
1117 | Method of Fabrication for Encapsulated Polarizing Resonant Gratings |
1118 | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
1119 | Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors |
1120 | Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD) |
1121 | Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition |
1122 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
1123 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
1124 | Properties of HfAlO film deposited by plasma enhanced atomic layer deposition |
1125 | Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection |
1126 | Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide |
1127 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
1128 | Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process |
1129 | Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas |
1130 | Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition |
1131 | Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition |
1132 | Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3 |
1133 | Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency |
1134 | Efficient and Sustained Photoelectrochemical Water Oxidation by Cobalt Oxide/Silicon Photoanodes with Nanotextured Interfaces |
1135 | Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source |
1136 | Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing |
1137 | Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems |
1138 | Atomic Layer Deposition of NiO to Produce Active Material for Thin-Film Lithium-Ion Batteries |
1139 | Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure |
1140 | Very high frequency plasma reactant for atomic layer deposition |
1141 | Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition |
1142 | Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors |
1143 | Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems |
1144 | Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment |
1145 | Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition |
1146 | The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor |
1147 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
1148 | 1D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices |
1149 | Biofilm prevention on cochlear implants |
1150 | Thermal and plasma enhanced atomic layer deposition of TiO2: Comparison of spectroscopic and electric properties |
1151 | The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation |
1152 | Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition |
1153 | Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry |
1154 | A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application |
1155 | Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature |
1156 | Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer |
1157 | Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films |
1158 | Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition |
1159 | Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films |
1160 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
1161 | Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method |
1162 | Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires |
1163 | Cost-effective hole transporting material for stable and efficient perovskite solar cells with fill factors up to 82% |
1164 | The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process |
1165 | Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films |
1166 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
1167 | Surface reactions during atomic layer deposition of Pt derived from gas phase infrared spectroscopy |
1168 | Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights |
1169 | Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study |
1170 | PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor |
1171 | Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices |
1172 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
1173 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
1174 | Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions |
1175 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
1176 | Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition |
1177 | Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4 |
1178 | Oxygen migration in TiO2-based higher-k gate stacks |
1179 | Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys |
1180 | Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen |
1181 | Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces |
1182 | Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor |
1183 | Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition |
1184 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
1185 | Study on the resistive switching time of TiO2 thin films |
1186 | Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors |
1187 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
1188 | Graphene based on-chip variable optical attenuator operating at 855 nm wavelength |
1189 | Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition |
1190 | Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing |
1191 | Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films |
1192 | Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs |
1193 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
1194 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
1195 | Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition |
1196 | High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane |
1197 | Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition |
1198 | Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors |
1199 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
1200 | Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition |
1201 | Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells |
1202 | Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells |
1203 | Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition |
1204 | Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops |
1205 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
1206 | Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition |
1207 | Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer |
1208 | Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition |
1209 | Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process |
1210 | Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates |
1211 | Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks |
1212 | Properties of plasma enhanced atomic layer deposited ruthenium thin films from Ru(EtCp)2 |
1213 | Plasma-enhanced atomic layer deposition of BaTiO3 |
1214 | Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes |
1215 | Plasma-enhanced atomic layer deposition of BaTiO3 |
1216 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
1217 | Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2 |
1218 | Mechanical properties of thin-film Parylene-metal-Parylene devices |
1219 | Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor |
1220 | Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices |
1221 | Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits |
1222 | AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD |
1223 | Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber |
1224 | Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition |
1225 | Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils |
1226 | Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer |
1227 | Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer |
1228 | Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition |
1229 | Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2 |
1230 | Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice |
1231 | Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments |
1232 | A New Hole Transport Material for Efficient Perovskite Solar Cells With Reduced Device Cost |
1233 | Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films |
1234 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
1235 | Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants |
1236 | Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition |
1237 | Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer |
1238 | Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma |
1239 | Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers |
1240 | Employing Overlayers To Improve the Performance of Cu2BaSnS4 Thin Film based Photoelectrochemical Water Reduction Devices |
1241 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
1242 | Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells |
1243 | Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation |
1244 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
1245 | Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization |
1246 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
1247 | Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon |
1248 | Encapsulation method for atom probe tomography analysis of nanoparticles |
1249 | Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor |
1250 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
1251 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
1252 | Macro-conformality of coatings deposited using high-speed spatial plasma-enhanced atomic layer deposition |
1253 | Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode |
1254 | Plasma-enhanced atomic layer deposition of zinc phosphate |
1255 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
1256 | Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features |
1257 | AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants |
1258 | Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4 |
1259 | Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides |
1260 | Low-bandgap mixed tin-lead iodide perovskite absorbers with long carrier lifetimes for all-perovskite tandem solar cells |
1261 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
1262 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
1263 | Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density |
1264 | Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications |
1265 | Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces |
1266 | Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation |
1267 | Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices |
1268 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
1269 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
1270 | Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2 |
1271 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
1272 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
1273 | Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition |
1274 | Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting |
1275 | Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc |
1276 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |