O2, Oxygen, CAS# 7782-44-7

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
2Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
3'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
41D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
546-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
6A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
7A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
8A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
9A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
10A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer
11A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
12Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
13Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
14Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers
15Advances in the fabrication of graphene transistors on flexible substrates
16Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
17Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
18Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
19Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
20Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
21Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
22Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
23ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
24AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
25AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
26AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
27Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
28Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
29Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
30An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
31Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
32Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
33Anti-stiction coating for mechanically tunable photonic crystal devices
34Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
35Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
36Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
37Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
38Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films
39Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
40Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
41Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
42Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
43Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
44Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
45Band alignment of Al2O3 with (-201) β-Ga2O3
46Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
47Breakdown and Protection of ALD Moisture Barrier Thin Films
48Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
49Capacitance spectroscopy of gate-defined electronic lattices
50Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
51Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
52Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
53Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
54Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
55Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
56Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
57Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
58Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
59Charge effects of ultrafine FET with nanodot type floating gate
60Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
61Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
62Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
63Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
64Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
65Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
66Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
67Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
68Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
69Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
70Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
71Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
72Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
73Damage evaluation in graphene underlying atomic layer deposition dielectrics
74DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
75Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
76Densification of Thin Aluminum Oxide Films by Thermal Treatments
77Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
78Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
79Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
80DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
81Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
82Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
83Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
84Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
85Dynamic tuning of plasmon resonance in the visible using graphene
86Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
87Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
88Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
89Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
90Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
91Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
92Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
93Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
94Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
95Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
96Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
97Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
98Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
99Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
100Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
101Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
102Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
103Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
104Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
105Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
106Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
107Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
108Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
109Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
110Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
111Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
112Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
113Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
114Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
115Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
116Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
117Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
118Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
119Energy-enhanced atomic layer deposition for more process and precursor versatility
120Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
121Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
122Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
123Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
124Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
125Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
126Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
127Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
128Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements
129Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
130Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
131Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
132Experimental verification of electro-refractive phase modulation in graphene
133Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
134Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
135Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
136Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
137Fiber-matrix interface reinforcement using Atomic Layer Deposition
138Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
139Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
140Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
141Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
142Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
143First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
144Fixed-Gap Tunnel Junction for Reading DNA Nucleotides
145Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
146Flexible, light trapping substrates for organic photovoltaics
147Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
148Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
149Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
150Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
151Hafnia and alumina on sulphur passivated germanium
152High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
153High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
154High-efficiency embedded transmission grating
155High-Reflective Coatings For Ground and Space Based Applications
156High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
157Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
158Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
159Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
160Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
161Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
162Impact of interface materials on side permeation in indirect encapsulation of organic electronics
163Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
164Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
165Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
166Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
167Improved understanding of recombination at the Si/Al2O3 interface
168Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
169Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
170Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
171Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
172Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
173In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
174In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
175In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
176Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
177Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
178Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
179Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
180Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
181Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
182Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
183Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
184Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
185Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
186Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
187Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
188Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
189Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
190Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
191Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
192Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
193Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
194Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
195Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
196Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
197Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
198Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
199Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
200Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
201Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
202Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
203Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
204Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
205Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
206Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
207Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
208Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
209Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
210Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
211Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
212Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
213Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
214Lithium-Iron (III) Fluoride Battery with Double Surface Protection
215Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
216Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
217Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
218Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
219Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
220Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
221Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
222Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
223MANOS performance dependence on ALD Al2O3 oxidation source
224Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
225Mechanical properties of thin-film Parylene-metal-Parylene devices
226Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
227Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
228Method of Fabrication for Encapsulated Polarizing Resonant Gratings
229Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
230Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
231Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
232Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
233Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
234Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
235Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
236MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
237Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
238N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
239Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
240Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
241Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
242Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
243Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
244Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
245Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
246Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
247On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
248On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
249On the equilibrium concentration of boron-oxygen defects in crystalline silicon
250On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
251On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
252Optical display film as flexible and light trapping substrate for organic photovoltaics
253Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
254Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
255Optimization of the Surface Structure on Black Silicon for Surface Passivation
256Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
257Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
258Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
259Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
260Passivation effects of atomic-layer-deposited aluminum oxide
261Patterned deposition by plasma enhanced spatial atomic layer deposition
262PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
263Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
264Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
265Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
266Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
267Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
268Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
269Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
270Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
271Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
272Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
273Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
274Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
275Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
276Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
277Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
278Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
279Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
280Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
281Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
282Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
283Propagation Effects in Carbon Nanoelectronics
284Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
285Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
286Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
287Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
288Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
289Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
290Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
291Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
292Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
293Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
294Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition
295Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
296Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
297Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
298Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
299Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
300Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
301Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
302Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
303Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
304Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
305Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
306Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
307Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
308Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
309Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
310Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
311Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
312Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
313Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
314Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
315Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
316Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
317Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
318Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
319Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
320Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
321Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
322The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
323The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
324The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
325Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
326Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
327Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
328Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
329TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
330Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
331Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects
332Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
333Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
334Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
335Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
336Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
337Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
338Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
339Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
340Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
341Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
342Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
343Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
344Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
345Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
346Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
347Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
348Very high frequency plasma reactant for atomic layer deposition
349Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
350Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
351Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
352Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
353Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
354Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
355Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
356Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
357Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
358Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
359Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
360Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
361Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
362Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
363Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
364Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
365Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
366Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
367Composite materials and nanoporous thin layers made by atomic layer deposition
368Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
369Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
370Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
371Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
372Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
373Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
374Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
375Optical and Electrical Properties of AlxTi1-xO Films
376Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
377Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
378Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
379Atomic Layer Deposition of Gold Metal
380Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
381Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
382Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
383Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
384Plasma-enhanced atomic layer deposition of BaTiO3
385High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
386Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
387Plasma-enhanced atomic layer deposition of BaTiO3
388Thermal conductivity of ultrathin BaTiO3 films grown by plasma-assisted atomic layer deposition
389Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
390Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
391Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
392Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma
393Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction
394Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition
395A multifunctional biphasic water splitting catalyst tailored for integration with high-performance semiconductor photoanodes
396Atomic layer deposition of Co3O4 on carbon nanotubes/carbon cloth for high-capacitance and ultrastable supercapacitor electrode
397Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction
398Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer
399Co/CoP Nanoparticles Encapsulated Within N, P-Doped Carbon Nanotubes on Nanoporous Metal-Organic Framework Nanosheets for Oxygen Reduction and Oxygen Evolution Reactions
400Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
401Efficient and Sustained Photoelectrochemical Water Oxidation by Cobalt Oxide/Silicon Photoanodes with Nanotextured Interfaces
402Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation
403Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition
404Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition
405Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
406Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
407Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
408Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films
409Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
410Radical Enhanced Atomic Layer Deposition of Metals and Oxides
411Radical Enhanced Atomic Layer Deposition of Metals and Oxides
412Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
413Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition
414Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
415Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits
416Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition
417Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
418Controlled erbium incorporation and photoluminescence of Er-doped Y2O3
419Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure
420Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition
421Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
422Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides
423Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
424Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2
425Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition
426Plasma enhanced atomic layer deposition of Fe2O3 thin films
427Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
428Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films
429Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2
430Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
431The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
432Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
433Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
434Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma
435Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
436Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
437Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
438Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
439Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
440Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
441Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition
442Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
443Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
444Plasma enhanced atomic layer deposition of Ga2O3 thin films
445Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
446Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
447Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
448Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
449RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
450Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
451Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
452α-Ga2O3 grown by low temperature atomic layer deposition on sapphire
453Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
454Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
455Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
456Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
457Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
458Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
459Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
460Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
461Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
462Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
463Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
464A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
465An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
466Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
467Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
468Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
469Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
470Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
471AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
472Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
473Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
474Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
475Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
476Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
477Characteristics of HfO2 thin films grown by plasma atomic layer deposition
478Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
479Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
480Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
481Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
482Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
483Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
484Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
485Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
486Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
487Damage evaluation in graphene underlying atomic layer deposition dielectrics
488Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
489Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
490Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
491Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
492Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
493Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
494Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
495Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
496Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
497Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
498Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
499Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
500Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
501Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
502Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
503Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
504Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
505Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
506Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
507Hafnia and alumina on sulphur passivated germanium
508HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
509Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
510Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
511Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
512Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
513In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
514Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
515Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents
516Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
517Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
518Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
519Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
520Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
521Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
522Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
523Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
524Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
525Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
526Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
527Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
528Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
529Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
530Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
531Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
532Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition
533Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
534On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
535Optical properties and bandgap evolution of ALD HfSiOx films
536Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
537PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
538Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
539Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
540Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
541Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
542Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
543Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
544Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
545Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
546Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
547Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
548Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
549Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
550Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
551Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
552Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
553The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
554The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
555The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
556The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
557The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process
558Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
559Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
560Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
561Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
562Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
563Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
564Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
565Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
566Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
567Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
568Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
569Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
570Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
571HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
572Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
573The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
574Annealing behavior of ferroelectric Si-doped HfO2 thin films
575Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
576Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
577Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
578Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
579Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
580Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
581Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
582Optical properties and bandgap evolution of ALD HfSiOx films
583TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
584The effects of layering in ferroelectric Si-doped HfO2 thin films
585Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
586Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
587Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
588Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
589New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell
590Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
591Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
592All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
593Antireflection In2O3 coatings of self-organized TiO2 nanotube layers prepared by atomic layer deposition
594Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation
595Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
596Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
597High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
598High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
599Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
600Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
601On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
602Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
603Exploiting atomic layer deposition for fabricating sub-10nm X-ray lenses
604High-resolution, high-aspect-ratio iridium-nickel composite nanoimprint molds
605Measurement and compensation of misalignment in double-sided hard X-ray Fresnel zone plates
606Systematic efficiency study of line-doubled zone plates
607TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
608IrO2 Nanodot Formation by Plasma Enhanced Atomic Layer Deposition as a Charge Storage Layer
609Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
610Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
611Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
612Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
613Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
614Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
615Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application
616The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
617XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films
618Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
619Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition
620Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
621Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
622Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries
623Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition
624Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries
625Remote Plasma Atomic Layer Deposition of Thin Films of Electrochemically Active LiCoO2
626Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries
627Electrochemical Performance of Lithium-Nickel Oxide Thin Films Obtained with Use of Atomic Layer Deposition
628Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
629In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
630Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
631Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
632Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
633Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
634Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
635Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
636Molybdenum Disulfide Catalytic Coatings via Atomic Layer Deposition for Solar Hydrogen Production from Copper Gallium Diselenide Photocathodes
637Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
638Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
639The important role of water in growth of monolayer transition metal dichalcogenides
640Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
641Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
642Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
643Macro-conformality of coatings deposited using high-speed spatial plasma-enhanced atomic layer deposition
644Radical Enhanced Atomic Layer Deposition of Metals and Oxides
645Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
646Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
647Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries
648Atomic Layer Deposition of NiO to Produce Active Material for Thin-Film Lithium-Ion Batteries
649Atomic scale surface modification of TiO2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis
650Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma
651Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors
652Radical Enhanced Atomic Layer Deposition of Metals and Oxides
653Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
654Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
655Development and characterization of an atmospheric pressure plasma reactor compatible with spatial ALD
656Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
657Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
658Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
659Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
660Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
661Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
662Catalytic Combustion and Dehydrogenation Reactions during Atomic Layer Deposition of Platinum
663Efficient Catalytic Microreactors with Atomic-Layer-Deposited Platinum Nanoparticles on Oxide Support
664Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
665Encapsulation method for atom probe tomography analysis of nanoparticles
666Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
667Growth of silica nanowires in vacuum
668In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
669Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
670Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
671Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
672Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
673Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches
674Remote Plasma ALD of Platinum and Platinum Oxide Films
675Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
676Room-Temperature Atomic Layer Deposition of Platinum
677Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
678Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions
679Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions
680Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
681Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
682Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
683Surface reactions during atomic layer deposition of Pt derived from gas phase infrared spectroscopy
684Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity
685The size effect of titania-supported Pt nanoparticles on the electrocatalytic activity towards methanol oxidation reaction primarily via the bifunctional mechanism
686Remote Plasma ALD of Platinum and Platinum Oxide Films
687Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
688Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
689Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
690Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
691Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
692Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper
693High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
694Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
695In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
696Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
697Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions
698Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions
699Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2
700Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
701Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
702(Invited) Characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 Capacitors
703ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
704Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma
705Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
706Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
707Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
708Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
709Radical Enhanced Atomic Layer Deposition of Metals and Oxides
710Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
711Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
712Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2
713Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
714Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
715'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
7163D structure evolution using metastable atomic layer deposition based on planar silver templates
717A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
718A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
719Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
720Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
721Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
722An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon
723Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1-x)2O3 for x = 0.25-0.74
724Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
725Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
726Applications of nanoNewton dielectrophoretic forces using atomic layer deposited oxides for microfluidic sample preparation and proteomics
727Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
728Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle
729Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
730Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
731Atomic layer deposition of metal-oxide thin films on cellulose fibers
732Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3
733Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
734Breakdown and Protection of ALD Moisture Barrier Thin Films
735Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
736Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
737Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
738Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer
739Comparative study of ALD SiO2 thin films for optical applications
740Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
741Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
742Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor
743Designing high performance precursors for atomic layer deposition of silicon oxide
744Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
745Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide
746Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
747Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
748Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
749Energy-enhanced atomic layer deposition for more process and precursor versatility
750Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance
751Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions
752Fabrication of nanoporous membranes for tuning microbial interactions and biochemical reactions
753Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
754Gate Insulator for High Mobility Oxide TFT
755Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
756High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
757High-Reflective Coatings For Ground and Space Based Applications
758Improved film quality of plasma enhanced atomic layer deposition SiO2 using plasma treatment cycle
759Index matching at the nanoscale: light scattering by core-shell Si/SiOx nanowires
760Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
761Internal Photoemission Spectroscopy Measurements of the Energy Barrier Heights between ALD SiO2 and Ta-Based Amorphous Metals
762Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
763Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
764Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
765Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors
766Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
767Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes
768Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
769Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
770Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
771Macro-conformality of coatings deposited using high-speed spatial plasma-enhanced atomic layer deposition
772Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
773Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
774Modal properties of a strip-loaded horizontal slot waveguide
775Multiplexed actuation using ultra dielectrophoresis for proteomics applications: a comprehensive electrical and electrothermal design methodology
776Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns
777Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition
778Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
779Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors
780On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
781On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
782Optical properties and bandgap evolution of ALD HfSiOx films
783PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
784Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
785Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
786Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
787Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
788Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
789Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material
790Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor
791Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current
792Radical Enhanced Atomic Layer Deposition of Metals and Oxides
793Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
794Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2
795Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
796Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
797Simultaneous scanning tunneling microscopy and synchrotron X-ray measurements in a gas environment
798Single-Cell Photonic Nanocavity Probes
799Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
800Spectral analysis of sidewall roughness during resist-core self-aligned double patterning integration
801Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach
802Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)
803Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
804Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
805Symmetrical Al2O3-based passivation layers for p- and n-type silicon
806Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice
807Theoretical Understanding of the Reaction Mechanism of SiO2 Atomic Layer Deposition
808Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
809Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
810Trapped charge densities in Al2O3-based silicon surface passivation layers
811Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
812Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
813A New Hole Transport Material for Efficient Perovskite Solar Cells With Reduced Device Cost
814Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
815Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
816Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2
817Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
818Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
819Cost-effective hole transporting material for stable and efficient perovskite solar cells with fill factors up to 82%
820Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
821Gas sensing properties in epitaxial SnO2 films grown on TiO2 single crystals with various orientations
822In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
823Low-bandgap mixed tin-lead iodide perovskite absorbers with long carrier lifetimes for all-perovskite tandem solar cells
824Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
825Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells
826Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
827SnO2 nanotubes fabricated using electrospinning and atomic layer deposition and their gas sensing performance
828Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
829Surface and sensing properties of PE-ALD SnO2 thin film
830Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries
831Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization
832Water Vapor Treatment of Low-Temperature Deposited SnO2 Electron Selective Layers for Efficient Flexible Perovskite Solar Cells
833Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
834Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
835Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
836Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
837Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
838Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
839Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
840Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
841Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
842Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
843Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
844Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices
845Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
846Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
847Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
848Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
849Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
850Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
851Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
852Radical Enhanced Atomic Layer Deposition of Metals and Oxides
853Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
854Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
855Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
856Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
857Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
858Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
859Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
860Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
861Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
862Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
863Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
864Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
865Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
866Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
867Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
868Topographically selective deposition
869Trilayer Tunnel Selectors for Memristor Memory Cells
870Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
871Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
872A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
873Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
874An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
875Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
876Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
877Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
878Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
879Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices
880Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
881Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
882Atomic layer deposition of titanium dioxide using titanium tetrachloride and titanium tetraisopropoxide as precursors
883Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
884Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
885Band alignment of atomic layer deposited TiO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy
886Biofilm prevention on cochlear implants
887Bipolar resistive switching in amorphous titanium oxide thin film
888Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
889Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
890Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
891Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
892Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
893Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition
894Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
895Effect of Crystal Structure and Grain Size on Photo-Catalytic Activities of Remote-Plasma Atomic Layer Deposited Titanium Oxide Thin Film
896Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
897Effects of TiO2 Interfacial Atomic Layers on Device Performances and Exciton Dynamics in ZnO Nanorod Polymer Solar Cells
898Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
899Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
900Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
901Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
902Employing Overlayers To Improve the Performance of Cu2BaSnS4 Thin Film based Photoelectrochemical Water Reduction Devices
903Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
904Energy-enhanced atomic layer deposition for more process and precursor versatility
905Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
906Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
907Epitaxial 1D electron transport layers for high-performance perovskite solar cells
908Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification
909Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
910Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
911Flexible Memristive Memory Array on Plastic Substrates
912Flexible Perovskite Photovoltaic Modules and Solar Cells Based on Atomic Layer Deposited Compact Layers and UV-Irradiated TiO2 Scaffolds on Plastic Substrates
913Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition
914Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
915Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
916Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
917Growth Temperature Dependence of TiO2 Thin Films Prepared by Using Plasma-Enhanced Atomic Layer Deposition Method
918Half-wave phase retarder working in transmission around 630nm realized by atomic layer deposition of sub-wavelength gratings
919High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
920High-efficiency embedded transmission grating
921Highly efficient and bending durable perovskite solar cells: toward a wearable power source
922Highly reflective polymeric substrates functionalized utilizing atomic layer deposition
923Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition
924Impact of interface materials on side permeation in indirect encapsulation of organic electronics
925Impedance spectroscopy analysis on the effects of TiO2 interfacial atomic layers in ZnO nanorod polymer solar cells: Effects of interfacial charge extraction on diffusion and recombination
926Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
927In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
928In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
929In-gap states in titanium dioxide and oxynitride atomic layer deposited films
930Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
931Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS
932Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
933Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition
934Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics
935Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
936Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
937Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
938Lithium-Iron (III) Fluoride Battery with Double Surface Protection
939Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
940Low temperature temporal and spatial atomic layer deposition of TiO2 films
941Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
942Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
943Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range
944MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
945Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
946On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
947Opportunities of Atomic Layer Deposition for Perovskite Solar Cells
948Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
949Oxygen migration in TiO2-based higher-k gate stacks
950Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
951Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
952Photovoltaic Rudorffites: Lead-Free Silver Bismuth Halides Alternative to Hybrid Lead Halide Perovskites
953Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
954Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2
955Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
956Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
957Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
958Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
959Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
960Plasma-enhanced atomic layer deposition of BaTiO3
961Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
962Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
963Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
964Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
965Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode
966Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition
967Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
968Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
969Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
970Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
971Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
972Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
973Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy
974Study on the resistive switching time of TiO2 thin films
975Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
976Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
977Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
978Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
979The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
980The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells
981The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
982The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
983The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
984Thermal and plasma enhanced atomic layer deposition of TiO2: Comparison of spectroscopic and electric properties
985Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
986TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
987Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
988Transient characterization of the electroforming process in TiO2 based resistive switching devices
989Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
990Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
991X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect
992Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
993Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
994Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
995Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
996Optical and Electrical Properties of TixSi1-xOy Films
997Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition
998Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
999Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
1000Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
1001Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
1002Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
1003Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition
1004Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
1005Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material
1006Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques
1007Improvement of Gas-Sensing Performance of Large-Area Tungsten Disulfide Nanosheets by Surface Functionalization
1008In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
1009Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
1010Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
1011Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
1012The important role of water in growth of monolayer transition metal dichalcogenides
1013Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells
1014Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
1015Very High Refractive Index Transition Metal Dichalcogenide Photonic Conformal Coatings by Conversion of ALD Metal Oxides
1016Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection
1017Controlled erbium incorporation and photoluminescence of Er-doped Y2O3
1018Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells
1019Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure
1020Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
1021Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
1022Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides
1023Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate
1024Effect of anode morphology on the performance of thin film solid oxide fuel cell with PEALD YSZ electrolyte
1025Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells
1026Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate
1027Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte
1028A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density
1029Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
1030All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
1031Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
1032Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
1033Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
1034Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition
1035Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
1036Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
1037Efficient Modification of Metal Oxide Surfaces with Phosphonic Acids by Spray Coating
1038Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD
1039Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
1040Employing Overlayers To Improve the Performance of Cu2BaSnS4 Thin Film based Photoelectrochemical Water Reduction Devices
1041Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays
1042Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
1043Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
1044From Precursor Chemistry to Gas Sensors: Plasma-Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications
1045Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
1046Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
1047Hysteresis behaviour of top-down fabricated ZnO nanowire transistors
1048Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
1049Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO
1050Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
1051Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
1052Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition
1053Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
1054Plasma enhanced atomic layer deposition and laser plasma deposition of ultra-thin ZnO films for Schottky barrier devices
1055Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition
1056Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
1057Radical Enhanced Atomic Layer Deposition of Metals and Oxides
1058Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
1059Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration
1060Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
1061Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
1062Spectroscopy and control of near-surface defects in conductive thin film ZnO
1063Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
1064Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces
1065The "Pure Marriage" between 3D Printing and Well-Ordered Nanoarrays by Using PEALD Assisted Hydrothermal Surface Engineering
1066The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
1067The Effects of an O2 Plasma on the Optical Properties of Atomic Layer Deposited ZnO
1068The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
1069The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
1070Top-down fabricated ZnO nanowire transistors for application in biosensors
1071Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature
1072Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell
1073Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
1074ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition
1075ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition: Material Properties Within and Outside the "Atomic Layer Deposition Window"
1076Plasma-enhanced atomic layer deposition of zinc phosphate
1077Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
1078Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
1079Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
1080Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
1081Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
1082Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
1083Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
1084Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
1085Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD
1086Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
1087Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
1088Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells
1089Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
1090Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
1091High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
1092Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
1093Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
1094Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
1095Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
1096Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
1097Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
1098Lithium-Iron (III) Fluoride Battery with Double Surface Protection
1099Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
1100Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
1101PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
1102PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
1103PEALD ZrO2 Films Deposition on TiN and Si Substrates
1104Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
1105Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
1106Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
1107Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells
1108Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
1109Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
1110Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
1111Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
1112Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
1113Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
1114The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition
1115The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
1116Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
1117Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
1118XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films
1119ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
1120ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
1121ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium
1122Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
1123Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
1124Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
1125Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation