| 1 | Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs |
| 2 | (Invited) Characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 Capacitors |
| 3 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 4 | Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor |
| 5 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
| 6 | Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy |
| 7 | Atomic Layer Deposition of the Conductive Delafossite PtCoO2 |
| 8 | Densification of Thin Aluminum Oxide Films by Thermal Treatments |
| 9 | Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma |
| 10 | Annealing behavior of ferroelectric Si-doped HfO2 thin films |
| 11 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
| 12 | The important role of water in growth of monolayer transition metal dichalcogenides |
| 13 | On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR |
| 14 | Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure |
| 15 | Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber |
| 16 | On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR |
| 17 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
| 18 | Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating |
| 19 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
| 20 | Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping |
| 21 | Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition |
| 22 | The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition |
| 23 | Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
| 24 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
| 25 | Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications |
| 26 | High-efficiency embedded transmission grating |
| 27 | Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer |
| 28 | Photovoltaic Rudorffites: Lead-Free Silver Bismuth Halides Alternative to Hybrid Lead Halide Perovskites |
| 29 | Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating |
| 30 | Atomic Layer Deposition of Ni-Co-O Thin-Film Electrodes for Solid-State LIBs and the Influence of Chemical Composition on Overcapacity |
| 31 | Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes |
| 32 | XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films |
| 33 | Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition |
| 34 | Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma |
| 35 | Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD |
| 36 | Optimization of Y2O3 dopant concentration of yttria stabilized zirconia thin film electrolyte prepared by plasma enhanced atomic layer deposition for high performance thin film solid oxide fuel cells |
| 37 | Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells |
| 38 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
| 39 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
| 40 | Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration |
| 41 | Plasma-induced sub-10nm Au-SnO2-In2O3 heterostructures fabricated by atomic layer deposition for highly sensitive ethanol detection on ppm level |
| 42 | Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications |
| 43 | Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications |
| 44 | Exploiting atomic layer deposition for fabricating sub-10nm X-ray lenses |
| 45 | Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films |
| 46 | Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide |
| 47 | Influence of plasma power on deposition mechanism and structural properties of MoOx thin films by plasma enhanced atomic layer deposition |
| 48 | ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition |
| 49 | Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition |
| 50 | Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma |
| 51 | Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD |
| 52 | Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2 |
| 53 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
| 54 | Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer |
| 55 | Passivation effects of atomic-layer-deposited aluminum oxide |
| 56 | Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches |
| 57 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
| 58 | Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition |
| 59 | Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma |
| 60 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
| 61 | Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells |
| 62 | Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition |
| 63 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
| 64 | Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 |
| 65 | Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon |
| 66 | All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process |
| 67 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
| 68 | Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films |
| 69 | Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle |
| 70 | Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone |
| 71 | Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods |
| 72 | Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features |
| 73 | Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method |
| 74 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
| 75 | Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique |
| 76 | Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 77 | Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition |
| 78 | Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films |
| 79 | A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer |
| 80 | Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition |
| 81 | Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces |
| 82 | Atomic layer deposition of metal-oxide thin films on cellulose fibers |
| 83 | Highly reflective polymeric substrates functionalized utilizing atomic layer deposition |
| 84 | Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene |
| 85 | Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition |
| 86 | High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films |
| 87 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
| 88 | Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping |
| 89 | Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection |
| 90 | Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors |
| 91 | Half-wave phase retarder working in transmission around 630nm realized by atomic layer deposition of sub-wavelength gratings |
| 92 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
| 93 | Properties of HfAlO film deposited by plasma enhanced atomic layer deposition |
| 94 | Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films |
| 95 | Large area, patterned growth of 2D MoS2 and lateral MoS2-WS2 heterostructures for nano- and opto-electronic applications |
| 96 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
| 97 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
| 98 | Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization |
| 99 | Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition |
| 100 | Plasma-enhanced atomic layer deposition of BaTiO3 |
| 101 | IrO2 Nanodot Formation by Plasma Enhanced Atomic Layer Deposition as a Charge Storage Layer |
| 102 | Characteristics of HfO2 thin films grown by plasma atomic layer deposition |
| 103 | Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption |
| 104 | Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency |
| 105 | Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell |
| 106 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
| 107 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
| 108 | Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films |
| 109 | Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells |
| 110 | Properties of HfAlO film deposited by plasma enhanced atomic layer deposition |
| 111 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
| 112 | Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2 |
| 113 | Atomic layer deposition of YMnO3 thin films |
| 114 | Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor |
| 115 | XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films |
| 116 | Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2 |
| 117 | Optical in situ monitoring of plasma-enhanced atomic layer deposition process |
| 118 | Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content |
| 119 | Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries |
| 120 | Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma |
| 121 | Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry |
| 122 | Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces |
| 123 | Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition |
| 124 | Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments |
| 125 | Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application |
| 126 | Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction |
| 127 | Alloyed 2D Metal-Semiconductor Atomic Layer Junctions |
| 128 | Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells |
| 129 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 130 | Fixed-Gap Tunnel Junction for Reading DNA Nucleotides |
| 131 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
| 132 | Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing |
| 133 | Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy |
| 134 | Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition |
| 135 | In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3 |
| 136 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
| 137 | Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization |
| 138 | Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors |
| 139 | PEALD ZrO2 Films Deposition on TiN and Si Substrates |
| 140 | Development and characterization of an atmospheric pressure plasma reactor compatible with spatial ALD |
| 141 | Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si |
| 142 | Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics |
| 143 | Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD |
| 144 | Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors |
| 145 | Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition |
| 146 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
| 147 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
| 148 | Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers |
| 149 | Innovative remote plasma source for atomic layer deposition for GaN devices |
| 150 | Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen |
| 151 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
| 152 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
| 153 | On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies |
| 154 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
| 155 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
| 156 | MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion |
| 157 | Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor |
| 158 | Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes |
| 159 | Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides |
| 160 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
| 161 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
| 162 | Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas |
| 163 | Characteristics of TiO2 Films Prepared by ALD With and Without Plasma |
| 164 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
| 165 | Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks |
| 166 | A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application |
| 167 | Very High Refractive Index Transition Metal Dichalcogenide Photonic Conformal Coatings by Conversion of ALD Metal Oxides |
| 168 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
| 169 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
| 170 | Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy |
| 171 | Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor |
| 172 | Optical and Electrical Properties of TixSi1-xOy Films |
| 173 | Fabrication of nanoporous membranes for tuning microbial interactions and biochemical reactions |
| 174 | Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights |
| 175 | Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene |
| 176 | Electrical characterization of the slow boron oxygen defect component in Czochralski silicon |
| 177 | Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells |
| 178 | Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition |
| 179 | Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells |
| 180 | Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications |
| 181 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
| 182 | Cost-effective hole transporting material for stable and efficient perovskite solar cells with fill factors up to 82% |
| 183 | Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition |
| 184 | A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition |
| 185 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
| 186 | Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer |
| 187 | Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C |
| 188 | Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures |
| 189 | X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect |
| 190 | Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors |
| 191 | Optimization of the Surface Structure on Black Silicon for Surface Passivation |
| 192 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
| 193 | PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads |
| 194 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
| 195 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
| 196 | The Effects of an O2 Plasma on the Optical Properties of Atomic Layer Deposited ZnO |
| 197 | Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO2 and TiO2 |
| 198 | Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches |
| 199 | Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme |
| 200 | Plasma enhanced atomic layer deposited silicon dioxide with divalent Si precursor [N,N'-tert-butyl-1,1-dimethylethylenediamine silylene] |
| 201 | Efficient Catalytic Microreactors with Atomic-Layer-Deposited Platinum Nanoparticles on Oxide Support |
| 202 | Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor |
| 203 | Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer |
| 204 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
| 205 | Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 206 | Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells |
| 207 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
| 208 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
| 209 | Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
| 210 | Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure |
| 211 | Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps |
| 212 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
| 213 | Residual stress study of thin films deposited by atomic layer deposition |
| 214 | Growth of Bi2O3 Films by Thermal- and Plasma-Enhanced Atomic Layer Deposition Monitored with Real-Time Spectroscopic Ellipsometry for Photocatalytic Water Splitting |
| 215 | Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics |
| 216 | Using top graphene layer as sacrificial protection during dielectric atomic layer deposition |
| 217 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
| 218 | Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition |
| 219 | Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering |
| 220 | Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications |
| 221 | Applications of nanoNewton dielectrophoretic forces using atomic layer deposited oxides for microfluidic sample preparation and proteomics |
| 222 | Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2 |
| 223 | Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system |
| 224 | HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition |
| 225 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
| 226 | Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma |
| 227 | Impact of interface materials on side permeation in indirect encapsulation of organic electronics |
| 228 | The important role of water in growth of monolayer transition metal dichalcogenides |
| 229 | Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor |
| 230 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
| 231 | Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition |
| 232 | Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors |
| 233 | Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization |
| 234 | The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition |
| 235 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
| 236 | Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor |
| 237 | On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies |
| 238 | Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications |
| 239 | Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition |
| 240 | Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors |
| 241 | Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition |
| 242 | Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C |
| 243 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
| 244 | Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations |
| 245 | Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation |
| 246 | Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode |
| 247 | Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment |
| 248 | Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition |
| 249 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
| 250 | Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires |
| 251 | Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition |
| 252 | Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon |
| 253 | Plasma-enhanced atomic layer deposition of BaTiO3 |
| 254 | Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide |
| 255 | Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells |
| 256 | Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition |
| 257 | Plasma-induced sub-10nm Au-SnO2-In2O3 heterostructures fabricated by atomic layer deposition for highly sensitive ethanol detection on ppm level |
| 258 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
| 259 | Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition |
| 260 | Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process |
| 261 | Large area, patterned growth of 2D MoS2 and lateral MoS2-WS2 heterostructures for nano- and opto-electronic applications |
| 262 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
| 263 | Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection |
| 264 | DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air |
| 265 | Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET |
| 266 | Optical properties and bandgap evolution of ALD HfSiOx films |
| 267 | Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride |
| 268 | Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment |
| 269 | Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells |
| 270 | Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells |
| 271 | Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma |
| 272 | Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys |
| 273 | Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering |
| 274 | Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide |
| 275 | Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition |
| 276 | Surface and sensing properties of PE-ALD SnO2 thin film |
| 277 | Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films |
| 278 | A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology |
| 279 | Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition |
| 280 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
| 281 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
| 282 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
| 283 | Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition |
| 284 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
| 285 | Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center |
| 286 | Energy-enhanced atomic layer deposition for more process and precursor versatility |
| 287 | Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors |
| 288 | Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD |
| 289 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 290 | Improved film quality of plasma enhanced atomic layer deposition SiO2 using plasma treatment cycle |
| 291 | Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate |
| 292 | Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate |
| 293 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
| 294 | 46-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor |
| 295 | Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma |
| 296 | Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application |
| 297 | Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition |
| 298 | Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters |
| 299 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
| 300 | Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition |
| 301 | Plasma enhanced atomic layer deposition of Fe2O3 thin films |
| 302 | Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition |
| 303 | Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors |
| 304 | Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells |
| 305 | Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions |
| 306 | Atomic Layer Deposition of Ni-Co-O Thin-Film Electrodes for Solid-State LIBs and the Influence of Chemical Composition on Overcapacity |
| 307 | Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer |
| 308 | On the role of nanoporosity in controlling the performance of moisture permeation barrier layers |
| 309 | Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer |
| 310 | Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors |
| 311 | Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films |
| 312 | Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation |
| 313 | Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect? |
| 314 | Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition |
| 315 | Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier |
| 316 | Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition |
| 317 | Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime |
| 318 | Gas sensing properties in epitaxial SnO2 films grown on TiO2 single crystals with various orientations |
| 319 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
| 320 | Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation |
| 321 | Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition |
| 322 | Plasma enhanced atomic layer deposition and laser plasma deposition of ultra-thin ZnO films for Schottky barrier devices |
| 323 | Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage |
| 324 | Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films |
| 325 | Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems |
| 326 | High-Reflective Coatings For Ground and Space Based Applications |
| 327 | Employing Overlayers To Improve the Performance of Cu2BaSnS4 Thin Film based Photoelectrochemical Water Reduction Devices |
| 328 | Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques |
| 329 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
| 330 | PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen |
| 331 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
| 332 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
| 333 | Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation |
| 334 | Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications |
| 335 | Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition |
| 336 | Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide |
| 337 | Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements |
| 338 | Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures |
| 339 | Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors |
| 340 | Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration |
| 341 | Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy |
| 342 | Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS |
| 343 | Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors |
| 344 | Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy |
| 345 | Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells |
| 346 | Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4 |
| 347 | Capacitance spectroscopy of gate-defined electronic lattices |
| 348 | Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals |
| 349 | Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper |
| 350 | Flexible Memristive Memory Array on Plastic Substrates |
| 351 | Plasma-enhanced atomic layer deposition of BaTiO3 |
| 352 | Systematic efficiency study of line-doubled zone plates |
| 353 | Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating |
| 354 | The role of plasma in plasma-enhanced atomic layer deposition of crystalline films |
| 355 | Band alignment of atomic layer deposited TiO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy |
| 356 | Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge |
| 357 | Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System |
| 358 | 3D structure evolution using metastable atomic layer deposition based on planar silver templates |
| 359 | Low-bandgap mixed tin-lead iodide perovskite absorbers with long carrier lifetimes for all-perovskite tandem solar cells |
| 360 | Nonvolatile Capacitive Crossbar Array for In-Memory Computing |
| 361 | Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium |
| 362 | Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation |
| 363 | Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures |
| 364 | Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy |
| 365 | Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition |
| 366 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
| 367 | Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4 |
| 368 | Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes |
| 369 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
| 370 | Topographical selective deposition: A comparison between plasma-enhanced atomic layer deposition/sputtering and plasma-enhanced atomic layer deposition/quasi-atomic layer etching approaches |
| 371 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
| 372 | Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications |
| 373 | Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition |
| 374 | Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation |
| 375 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
| 376 | Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO |
| 377 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
| 378 | Residual stress study of thin films deposited by atomic layer deposition |
| 379 | Highly efficient and bending durable perovskite solar cells: toward a wearable power source |
| 380 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 381 | Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films |
| 382 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
| 383 | Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3 |
| 384 | A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films |
| 385 | Method of Fabrication for Encapsulated Polarizing Resonant Gratings |
| 386 | Spectroscopy and control of near-surface defects in conductive thin film ZnO |
| 387 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
| 388 | Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition |
| 389 | Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films |
| 390 | Atomic Layer Deposition of Ni-Co-O Thin-Film Electrodes for Solid-State LIBs and the Influence of Chemical Composition on Overcapacity |
| 391 | Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films |
| 392 | Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures |
| 393 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
| 394 | HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition |
| 395 | Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1-x)2O3 |
| 396 | TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films |
| 397 | Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current |
| 398 | Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3 |
| 399 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
| 400 | Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer |
| 401 | PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor |
| 402 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
| 403 | Very high frequency plasma reactant for atomic layer deposition |
| 404 | Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices |
| 405 | Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition |
| 406 | Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions |
| 407 | In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition |
| 408 | Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method |
| 409 | Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries |
| 410 | Atomic Layer Deposition of NiO to Produce Active Material for Thin-Film Lithium-Ion Batteries |
| 411 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 412 | Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting |
| 413 | Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure |
| 414 | Atomic Layer Deposition of Gold Metal |
| 415 | Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition |
| 416 | Atomic layer deposition of Co3O4 on carbon nanotubes/carbon cloth for high-capacitance and ultrastable supercapacitor electrode |
| 417 | Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma |
| 418 | PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases |
| 419 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
| 420 | Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films |
| 421 | The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition |
| 422 | Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation |
| 423 | Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD) |
| 424 | The effects of layering in ferroelectric Si-doped HfO2 thin films |
| 425 | Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations |
| 426 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
| 427 | Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3 |
| 428 | Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD) |
| 429 | Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries |
| 430 | Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films |
| 431 | Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films |
| 432 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
| 433 | Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate |
| 434 | Atomic structure of conducting nanofilaments in TiO2 resistive switching memory |
| 435 | In-gap states in titanium dioxide and oxynitride atomic layer deposited films |
| 436 | Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films |
| 437 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
| 438 | Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition |
| 439 | Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition |
| 440 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
| 441 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 442 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
| 443 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
| 444 | Effect of anode morphology on the performance of thin film solid oxide fuel cell with PEALD YSZ electrolyte |
| 445 | Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells |
| 446 | Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs |
| 447 | Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing |
| 448 | A New Hole Transport Material for Efficient Perovskite Solar Cells With Reduced Device Cost |
| 449 | Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density |
| 450 | Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact |
| 451 | High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition |
| 452 | Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement |
| 453 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
| 454 | Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics |
| 455 | Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5 |
| 456 | Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 457 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
| 458 | Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition |
| 459 | N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes |
| 460 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
| 461 | Localized defect states and charge trapping in atomic layer deposited-Al2O3 films |
| 462 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
| 463 | Experimental verification of electro-refractive phase modulation in graphene |
| 464 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
| 465 | Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction |
| 466 | Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating |
| 467 | Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques |
| 468 | Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors |
| 469 | Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors |
| 470 | The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides |
| 471 | Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks |
| 472 | Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc |
| 473 | Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon |
| 474 | The size effect of titania-supported Pt nanoparticles on the electrocatalytic activity towards methanol oxidation reaction primarily via the bifunctional mechanism |
| 475 | Employing Overlayers To Improve the Performance of Cu2BaSnS4 Thin Film based Photoelectrochemical Water Reduction Devices |
| 476 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
| 477 | Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films |
| 478 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
| 479 | Plasma-assisted atomic layer deposition of nickel oxide as hole transport layer for hybrid perovskite solar cells |
| 480 | Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing |
| 481 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
| 482 | Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source |
| 483 | Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing |
| 484 | Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process |
| 485 | Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition |
| 486 | Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration |
| 487 | Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth |
| 488 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
| 489 | Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3 |
| 490 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
| 491 | Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis(ethylcyclopentadienyl)magnesium precursor |
| 492 | Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries |
| 493 | Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition |
| 494 | Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices |
| 495 | Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications |
| 496 | Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films |
| 497 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments |
| 498 | Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition |
| 499 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
| 500 | ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium |
| 501 | Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers |
| 502 | Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries |
| 503 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
| 504 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
| 505 | Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition |
| 506 | Theoretical Understanding of the Reaction Mechanism of SiO2 Atomic Layer Deposition |
| 507 | On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation |
| 508 | Surface reactions during atomic layer deposition of Pt derived from gas phase infrared spectroscopy |
| 509 | Topographically selective deposition |
| 510 | Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources |
| 511 | Damage evaluation in graphene underlying atomic layer deposition dielectrics |
| 512 | Internal Photoemission Spectroscopy Measurements of the Energy Barrier Heights between ALD SiO2 and Ta-Based Amorphous Metals |
| 513 | Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure |
| 514 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
| 515 | Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide |
| 516 | Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries |
| 517 | Spectral analysis of sidewall roughness during resist-core self-aligned double patterning integration |
| 518 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
| 519 | A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition |
| 520 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
| 521 | Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation |
| 522 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
| 523 | Lithium-Iron (III) Fluoride Battery with Double Surface Protection |
| 524 | Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices |
| 525 | Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film |
| 526 | Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells |
| 527 | Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma |
| 528 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
| 529 | Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions |
| 530 | Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application |
| 531 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
| 532 | An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD |
| 533 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
| 534 | Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide |
| 535 | Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation |
| 536 | Transient characterization of the electroforming process in TiO2 based resistive switching devices |
| 537 | Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties |
| 538 | Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition |
| 539 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
| 540 | Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics |
| 541 | Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 542 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
| 543 | Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy |
| 544 | Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte |
| 545 | Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing |
| 546 | Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions |
| 547 | Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4 |
| 548 | Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition |
| 549 | Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments |
| 550 | Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method |
| 551 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
| 552 | Thermal and plasma enhanced atomic layer deposition of TiO2: Comparison of spectroscopic and electric properties |
| 553 | AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD |
| 554 | Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions |
| 555 | Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition |
| 556 | Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor |
| 557 | Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes |
| 558 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
| 559 | Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition |
| 560 | Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection |
| 561 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 562 | MANOS performance dependence on ALD Al2O3 oxidation source |
| 563 | RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma |
| 564 | Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures |
| 565 | Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source |
| 566 | Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition |
| 567 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
| 568 | Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium |
| 569 | Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials |
| 570 | Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition |
| 571 | Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length |
| 572 | Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis |
| 573 | Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition |
| 574 | Plasma enhanced atomic layer deposition of Ga2O3 thin films |
| 575 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
| 576 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
| 577 | Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films |
| 578 | Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates |
| 579 | Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System |
| 580 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
| 581 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
| 582 | Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition |
| 583 | Atomic layer deposition of titanium dioxide using titanium tetrachloride and titanium tetraisopropoxide as precursors |
| 584 | Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films |
| 585 | Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting |
| 586 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
| 587 | Impedance spectroscopy analysis on the effects of TiO2 interfacial atomic layers in ZnO nanorod polymer solar cells: Effects of interfacial charge extraction on diffusion and recombination |
| 588 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
| 589 | Epitaxial 1D electron transport layers for high-performance perovskite solar cells |
| 590 | Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays |
| 591 | Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon |
| 592 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
| 593 | Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2 |
| 594 | Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition |
| 595 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
| 596 | Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting |
| 597 | Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3 |
| 598 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
| 599 | Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon |
| 600 | In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics |
| 601 | Study on the resistive switching time of TiO2 thin films |
| 602 | Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors |
| 603 | Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties |
| 604 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide |
| 605 | Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition |
| 606 | Propagation Effects in Carbon Nanoelectronics |
| 607 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 608 | Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy |
| 609 | Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films |
| 610 | Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN |
| 611 | Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene |
| 612 | Top-down fabricated ZnO nanowire transistors for application in biosensors |
| 613 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
| 614 | Index matching at the nanoscale: light scattering by core-shell Si/SiOx nanowires |
| 615 | A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD |
| 616 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
| 617 | Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films |
| 618 | Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2 |
| 619 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 620 | The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation |
| 621 | Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties |
| 622 | Growth of silica nanowires in vacuum |
| 623 | Mechanical properties of thin-film Parylene-metal-Parylene devices |
| 624 | Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition |
| 625 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 626 | Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure |
| 627 | Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications |
| 628 | Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops |
| 629 | Simultaneous scanning tunneling microscopy and synchrotron X-ray measurements in a gas environment |
| 630 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
| 631 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
| 632 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film |
| 633 | Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs |
| 634 | Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition |
| 635 | Effects of TiO2 Interfacial Atomic Layers on Device Performances and Exciton Dynamics in ZnO Nanorod Polymer Solar Cells |
| 636 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 637 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 638 | Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity |
| 639 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
| 640 | Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge |
| 641 | Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications |
| 642 | AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD |
| 643 | Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces |
| 644 | Sub-10-nm ferroelectric Gd-doped HfO2 layers |
| 645 | Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD) |
| 646 | Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor |
| 647 | Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition |
| 648 | Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2 |
| 649 | Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films |
| 650 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
| 651 | Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si |
| 652 | Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma |
| 653 | Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon |
| 654 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 655 | Flexible Perovskite Photovoltaic Modules and Solar Cells Based on Atomic Layer Deposited Compact Layers and UV-Irradiated TiO2 Scaffolds on Plastic Substrates |
| 656 | A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density |
| 657 | Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension |
| 658 | Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers |
| 659 | Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact |
| 660 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor |
| 661 | Electrochemical Performance of Lithium-Nickel Oxide Thin Films Obtained with Use of Atomic Layer Deposition |
| 662 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
| 663 | Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films |
| 664 | Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique |
| 665 | Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection |
| 666 | Energy-enhanced atomic layer deposition for more process and precursor versatility |
| 667 | The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices |
| 668 | Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition |
| 669 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
| 670 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
| 671 | Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition |
| 672 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
| 673 | Sub-7-nm textured ZrO2 with giant ferroelectricity |
| 674 | Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides |
| 675 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
| 676 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
| 677 | Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN |
| 678 | Hafnia and alumina on sulphur passivated germanium |
| 679 | Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas |
| 680 | Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators |
| 681 | Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3 |
| 682 | Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry |
| 683 | Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition |
| 684 | Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition |
| 685 | Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors |
| 686 | Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells |
| 687 | Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2 |
| 688 | Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics |
| 689 | Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride |
| 690 | Controlled erbium incorporation and photoluminescence of Er-doped Y2O3 |
| 691 | Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops |
| 692 | Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films |
| 693 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
| 694 | Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 |
| 695 | Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition |
| 696 | ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method |
| 697 | Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition |
| 698 | Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material |
| 699 | Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement |
| 700 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
| 701 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
| 702 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 703 | Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal |
| 704 | Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 705 | Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment |
| 706 | Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films |
| 707 | Dynamic tuning of plasmon resonance in the visible using graphene |
| 708 | Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition |
| 709 | Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting |
| 710 | Low temperature Topographically Selective Deposition by Plasma Enhanced Atomic Layer Deposition with ion bombardment assistance |
| 711 | Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition |
| 712 | Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures |
| 713 | In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd |
| 714 | Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess |
| 715 | Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source |
| 716 | Molybdenum Disulfide Catalytic Coatings via Atomic Layer Deposition for Solar Hydrogen Production from Copper Gallium Diselenide Photocathodes |
| 717 | Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers |
| 718 | Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics |
| 719 | Effect of Crystal Structure and Grain Size on Photo-Catalytic Activities of Remote-Plasma Atomic Layer Deposited Titanium Oxide Thin Film |
| 720 | Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy |
| 721 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
| 722 | Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films |
| 723 | Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries |
| 724 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
| 725 | Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 726 | Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy |
| 727 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
| 728 | Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights |
| 729 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
| 730 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
| 731 | Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films |
| 732 | High-resolution, high-aspect-ratio iridium-nickel composite nanoimprint molds |
| 733 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
| 734 | Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films |
| 735 | Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors |
| 736 | Water Vapor Treatment of Low-Temperature Deposited SnO2 Electron Selective Layers for Efficient Flexible Perovskite Solar Cells |
| 737 | Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition |
| 738 | In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition |
| 739 | Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment |
| 740 | Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition |
| 741 | Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition |
| 742 | A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems |
| 743 | Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach |
| 744 | Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition |
| 745 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
| 746 | Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric |
| 747 | Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth |
| 748 | Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries |
| 749 | Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process |
| 750 | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
| 751 | 'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition |
| 752 | An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor |
| 753 | The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation |
| 754 | Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries |
| 755 | Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition |
| 756 | Thermal and plasma enhanced atomic layer deposition of ultrathin TiO2 on silicon from amide and alkoxide precursors: growth chemistry and photoelectrochemical performance |
| 757 | Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers |
| 758 | Gate Insulator for High Mobility Oxide TFT |
| 759 | Modal properties of a strip-loaded horizontal slot waveguide |
| 760 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
| 761 | Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition |
| 762 | Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films |
| 763 | High-efficiency embedded transmission grating |
| 764 | Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2 |
| 765 | Patterned deposition by plasma enhanced spatial atomic layer deposition |
| 766 | Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application |
| 767 | Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation |
| 768 | Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition |
| 769 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
| 770 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
| 771 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
| 772 | Remote Plasma Atomic Layer Deposition of Thin Films of Electrochemically Active LiCoO2 |
| 773 | Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma |
| 774 | Chemical Reaction and Ion Bombardment Effects of Plasma Radicals on Optoelectrical Properties of SnO2 Thin Films via Atomic Layer Deposition |
| 775 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 776 | High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits |
| 777 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
| 778 | Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma |
| 779 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
| 780 | Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications |
| 781 | Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 782 | Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants |
| 783 | Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions |
| 784 | Controlled erbium incorporation and photoluminescence of Er-doped Y2O3 |
| 785 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
| 786 | Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas |
| 787 | Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy |
| 788 | An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon |
| 789 | Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition |
| 790 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
| 791 | Plasma-Enhanced Atomic Layer Deposition of Zirconium Oxide Thin Films and Its Application to Solid Oxide Fuel Cells |
| 792 | Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries |
| 793 | Growth Temperature Dependence of TiO2 Thin Films Prepared by Using Plasma-Enhanced Atomic Layer Deposition Method |
| 794 | Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition |
| 795 | In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition |
| 796 | Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition |
| 797 | Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents |
| 798 | Using top graphene layer as sacrificial protection during dielectric atomic layer deposition |
| 799 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
| 800 | Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic |
| 801 | Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries |
| 802 | Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors |
| 803 | Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma |
| 804 | Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns |
| 805 | Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant |
| 806 | Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition |
| 807 | Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition |
| 808 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
| 809 | ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications |
| 810 | Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications |
| 811 | Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1-x)2O3 |
| 812 | Shuffling Atomic Layer Deposition Gas Sequences to Modulate Bimetallic Thin Films and Nanoparticle Properties |
| 813 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 814 | Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure |
| 815 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
| 816 | Ultrathin Surface Coating Enables the Stable Sodium Metal Anode |
| 817 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
| 818 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 819 | Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3 |
| 820 | Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement |
| 821 | Biofilm prevention on cochlear implants |
| 822 | High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates |
| 823 | Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods |
| 824 | Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition |
| 825 | Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry |
| 826 | Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects |
| 827 | Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor |
| 828 | Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties |
| 829 | Optical properties and bandgap evolution of ALD HfSiOx films |
| 830 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
| 831 | On the role of nanoporosity in controlling the performance of moisture permeation barrier layers |
| 832 | Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C |
| 833 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
| 834 | Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells |
| 835 | Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing |
| 836 | Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers |
| 837 | Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition |
| 838 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
| 839 | Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate |
| 840 | Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition |
| 841 | AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants |
| 842 | Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers |
| 843 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
| 844 | Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors |
| 845 | Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition |
| 846 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
| 847 | Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures |
| 848 | Lithium-Iron (III) Fluoride Battery with Double Surface Protection |
| 849 | High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films |
| 850 | 'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition |
| 851 | Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy |
| 852 | Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers |
| 853 | High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane |
| 854 | Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source |
| 855 | High-Reflective Coatings For Ground and Space Based Applications |
| 856 | Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer |
| 857 | Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate |
| 858 | Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement |
| 859 | Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition |
| 860 | Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices |
| 861 | Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition |
| 862 | Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries |
| 863 | Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell |
| 864 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
| 865 | Oxygen migration in TiO2-based higher-k gate stacks |
| 866 | Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition |
| 867 | Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition |
| 868 | Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks |
| 869 | Catalytic Combustion and Dehydrogenation Reactions during Atomic Layer Deposition of Platinum |
| 870 | Graphene based on-chip variable optical attenuator operating at 855 nm wavelength |
| 871 | Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million |
| 872 | Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks |
| 873 | Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors |
| 874 | SnO2 nanotubes fabricated using electrospinning and atomic layer deposition and their gas sensing performance |
| 875 | Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer |
| 876 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films |
| 877 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
| 878 | Impact of interface materials on side permeation in indirect encapsulation of organic electronics |
| 879 | Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition |
| 880 | Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films |
| 881 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 882 | Bipolar resistive switching in amorphous titanium oxide thin film |
| 883 | Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors |
| 884 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
| 885 | Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition |
| 886 | Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers |
| 887 | Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells |
| 888 | Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions |
| 889 | Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor |
| 890 | Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate |
| 891 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
| 892 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
| 893 | The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells |
| 894 | Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices |
| 895 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
| 896 | Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors |
| 897 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 898 | Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks |
| 899 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 900 | Designing high performance precursors for atomic layer deposition of silicon oxide |
| 901 | Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor |
| 902 | Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing |
| 903 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
| 904 | Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition |
| 905 | High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical |
| 906 | Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices |
| 907 | Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices |
| 908 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
| 909 | Antireflection In2O3 coatings of self-organized TiO2 nanotube layers prepared by atomic layer deposition |
| 910 | Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition |
| 911 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
| 912 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 913 | Opportunities of Atomic Layer Deposition for Perovskite Solar Cells |
| 914 | Multiplexed actuation using ultra dielectrophoresis for proteomics applications: a comprehensive electrical and electrothermal design methodology |
| 915 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
| 916 | On the equilibrium concentration of boron-oxygen defects in crystalline silicon |
| 917 | Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System |
| 918 | Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition |
| 919 | Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method |
| 920 | 1D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices |
| 921 | Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories |
| 922 | Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO2 Studied by Gas-Phase Infrared and Optical Emission Spectroscopy |
| 923 | Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD |
| 924 | Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor |
| 925 | Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes |
| 926 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
| 927 | Macro-conformality of coatings deposited using high-speed spatial plasma-enhanced atomic layer deposition |
| 928 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 929 | Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 |
| 930 | Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices |
| 931 | Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3 |
| 932 | Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2 |
| 933 | Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics |
| 934 | Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition |
| 935 | Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures |
| 936 | Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity |
| 937 | Tuning size and coverage of Pd nanoparticles using atomic layer deposition |
| 938 | Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension |
| 939 | Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware |
| 940 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
| 941 | Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors |
| 942 | Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3 |
| 943 | ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition: Material Properties Within and Outside the "Atomic Layer Deposition Window" |
| 944 | Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition |
| 945 | Thickness and Morphology Dependent Electrical Properties of ALD-Synthesized MoS2 FETs |
| 946 | Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices |
| 947 | Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells |
| 948 | Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide |
| 949 | Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor |
| 950 | High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3 |
| 951 | The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges |
| 952 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
| 953 | Efficient and Sustained Photoelectrochemical Water Oxidation by Cobalt Oxide/Silicon Photoanodes with Nanotextured Interfaces |
| 954 | Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy |
| 955 | Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition |
| 956 | Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy |
| 957 | Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition |
| 958 | Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD |
| 959 | MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion |
| 960 | Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma |
| 961 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
| 962 | Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD |
| 963 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
| 964 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
| 965 | A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition |
| 966 | First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina |
| 967 | Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition |
| 968 | Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides |
| 969 | High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition |
| 970 | Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition |
| 971 | Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates |
| 972 | Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition |
| 973 | Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals |
| 974 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
| 975 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
| 976 | Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants |
| 977 | Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V |
| 978 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
| 979 | Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium |
| 980 | Properties of plasma enhanced atomic layer deposited ruthenium thin films from Ru(EtCp)2 |
| 981 | ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition |
| 982 | Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes |
| 983 | Improved understanding of recombination at the Si/Al2O3 interface |
| 984 | In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics |
| 985 | Room-Temperature Atomic Layer Deposition of Platinum |
| 986 | Efficient Modification of Metal Oxide Surfaces with Phosphonic Acids by Spray Coating |
| 987 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
| 988 | Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma |
| 989 | Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface |
| 990 | Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range |
| 991 | Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions |
| 992 | Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications |
| 993 | Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition |
| 994 | Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films |
| 995 | Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer |
| 996 | Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films |
| 997 | Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates |
| 998 | High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films |
| 999 | Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition |
| 1000 | Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer |
| 1001 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
| 1002 | α-Ga2O3 grown by low temperature atomic layer deposition on sapphire |
| 1003 | Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon |
| 1004 | Ferroelectricity in hafnia controlled via surface electrochemical state |
| 1005 | Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy |
| 1006 | Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques |
| 1007 | Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET |
| 1008 | Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition |
| 1009 | Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition |
| 1010 | Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions |
| 1011 | The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures |
| 1012 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
| 1013 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
| 1014 | Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma |
| 1015 | Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems |
| 1016 | Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source |
| 1017 | Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes |
| 1018 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
| 1019 | Nonvolatile Capacitive Crossbar Array for In-Memory Computing |
| 1020 | Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3 |
| 1021 | Energy-enhanced atomic layer deposition for more process and precursor versatility |
| 1022 | Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors |
| 1023 | Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing |
| 1024 | Composite materials and nanoporous thin layers made by atomic layer deposition |
| 1025 | Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures |
| 1026 | Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range |
| 1027 | The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process |
| 1028 | Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC |
| 1029 | ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies |
| 1030 | Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition |
| 1031 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
| 1032 | Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma |
| 1033 | Measurement and compensation of misalignment in double-sided hard X-ray Fresnel zone plates |
| 1034 | Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries |
| 1035 | DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors |
| 1036 | Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma |
| 1037 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
| 1038 | In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices |
| 1039 | Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors |
| 1040 | Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements |
| 1041 | Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits |
| 1042 | Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique |
| 1043 | Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor |
| 1044 | Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD |
| 1045 | Effect of plasma power on the structural properties of tin oxide prepared by plasma-enhanced atomic layer deposition |
| 1046 | Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 1047 | Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses |
| 1048 | Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition |
| 1049 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
| 1050 | Macro-conformality of coatings deposited using high-speed spatial plasma-enhanced atomic layer deposition |
| 1051 | The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor |
| 1052 | Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN |
| 1053 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
| 1054 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
| 1055 | Optical properties and bandgap evolution of ALD HfSiOx films |
| 1056 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
| 1057 | Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate |
| 1058 | Atomic scale surface modification of TiO2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis |
| 1059 | Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer |
| 1060 | Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3 |
| 1061 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
| 1062 | Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology |
| 1063 | Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides |
| 1064 | Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge |
| 1065 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
| 1066 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
| 1067 | Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor |
| 1068 | Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition |
| 1069 | Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2 |
| 1070 | Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2 |
| 1071 | Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition |
| 1072 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
| 1073 | Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice |
| 1074 | Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD |
| 1075 | Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal |
| 1076 | Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01) |
| 1077 | Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC) |
| 1078 | Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate |
| 1079 | Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition |
| 1080 | Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films |
| 1081 | Co/CoP Nanoparticles Encapsulated Within N, P-Doped Carbon Nanotubes on Nanoporous Metal-Organic Framework Nanosheets for Oxygen Reduction and Oxygen Evolution Reactions |
| 1082 | Optical and Electrical Properties of AlxTi1-xO Films |
| 1083 | Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature |
| 1084 | Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma |
| 1085 | Toward reliable MIS- and MOS-gate structures for GaN lateral power devices |
| 1086 | Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries |
| 1087 | Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe |
| 1088 | Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors |
| 1089 | Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD |
| 1090 | Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells |
| 1091 | Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability |
| 1092 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
| 1093 | Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces |
| 1094 | Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition |
| 1095 | Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting |
| 1096 | Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma |
| 1097 | Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation |
| 1098 | Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions |
| 1099 | Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs |
| 1100 | Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition |
| 1101 | Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution |
| 1102 | Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing |
| 1103 | The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD |
| 1104 | Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions |
| 1105 | Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy |
| 1106 | Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon |
| 1107 | All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process |
| 1108 | Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2 |
| 1109 | Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications |
| 1110 | Charge effects of ultrafine FET with nanodot type floating gate |
| 1111 | Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition |
| 1112 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 1113 | Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions |
| 1114 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
| 1115 | Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories |
| 1116 | Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition |
| 1117 | Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma |
| 1118 | Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells |
| 1119 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
| 1120 | Thermal conductivity of ultrathin BaTiO3 films grown by plasma-assisted atomic layer deposition |
| 1121 | Optical display film as flexible and light trapping substrate for organic photovoltaics |
| 1122 | Bias stress and humidity exposure of amorphous InGaZnO thin-film transistors with atomic layer deposited Al2O3 passivation using dimethylaluminum hydride at 200°C |
| 1123 | Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon |
| 1124 | Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition |
| 1125 | Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2 |
| 1126 | Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen |
| 1127 | Nanoscale Encapsulation of Hybrid Perovskites Using Hybrid Atomic Layer Deposition |
| 1128 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 1129 | In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells |
| 1130 | Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors |
| 1131 | Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature |
| 1132 | Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy |
| 1133 | Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices |
| 1134 | Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants |
| 1135 | A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD |
| 1136 | Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes |
| 1137 | Encapsulation method for atom probe tomography analysis of nanoparticles |
| 1138 | The "Pure Marriage" between 3D Printing and Well-Ordered Nanoarrays by Using PEALD Assisted Hydrothermal Surface Engineering |
| 1139 | Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface |
| 1140 | In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd |
| 1141 | Plasma-enhanced atomic layer deposition of zinc phosphate |
| 1142 | Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon |
| 1143 | Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates |
| 1144 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
| 1145 | Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 1146 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
| 1147 | The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain |
| 1148 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
| 1149 | Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition |
| 1150 | Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material |
| 1151 | Fiber-matrix interface reinforcement using Atomic Layer Deposition |
| 1152 | Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition |
| 1153 | Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices |
| 1154 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
| 1155 | Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition |
| 1156 | Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition |
| 1157 | Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage |
| 1158 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
| 1159 | Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers |
| 1160 | Properties of plasma enhanced atomic layer deposited ruthenium thin films from Ru(EtCp)2 |
| 1161 | Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application |
| 1162 | Flexible, light trapping substrates for organic photovoltaics |
| 1163 | Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process |
| 1164 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
| 1165 | Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications |
| 1166 | In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors |
| 1167 | Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition |
| 1168 | Single-Cell Photonic Nanocavity Probes |
| 1169 | Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor |
| 1170 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
| 1171 | Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors |
| 1172 | Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials |
| 1173 | Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources |
| 1174 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
| 1175 | Layer-controlled and atomically thin WS2 films prepared by sulfurization of atomic-layer-deposited WO3 films |
| 1176 | Electrochemical Activation of Atomic Layer-Deposited Cobalt Phosphate Electrocatalysts for Water Oxidation |
| 1177 | Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition |
| 1178 | Tube-type plasma-enhanced atomic layer deposition of aluminum oxide: Enabling record lab performance for the industry with demonstrated cell efficiencies >24% |
| 1179 | The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition |
| 1180 | Advances in the fabrication of graphene transistors on flexible substrates |
| 1181 | Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 1182 | Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode |
| 1183 | New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell |
| 1184 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
| 1185 | Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors |
| 1186 | Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation |
| 1187 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 1188 | Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 1189 | Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films |
| 1190 | Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices |
| 1191 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
| 1192 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
| 1193 | Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4 |
| 1194 | A multifunctional biphasic water splitting catalyst tailored for integration with high-performance semiconductor photoanodes |
| 1195 | Lithium-Iron (III) Fluoride Battery with Double Surface Protection |
| 1196 | Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1-x)2O3 for x = 0.25-0.74 |
| 1197 | Comparative study of ALD SiO2 thin films for optical applications |
| 1198 | Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries |
| 1199 | Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3 |
| 1200 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
| 1201 | Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer |
| 1202 | Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure |
| 1203 | Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition |
| 1204 | Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 |
| 1205 | Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 1206 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
| 1207 | Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification |
| 1208 | Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers |
| 1209 | Trilayer Tunnel Selectors for Memristor Memory Cells |
| 1210 | Damage evaluation in graphene underlying atomic layer deposition dielectrics |
| 1211 | Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells |
| 1212 | Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films |
| 1213 | Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium |
| 1214 | Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition |
| 1215 | Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition |
| 1216 | The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain |
| 1217 | Low temperature temporal and spatial atomic layer deposition of TiO2 films |
| 1218 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
| 1219 | Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment |
| 1220 | Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition |
| 1221 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
| 1222 | Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries |
| 1223 | Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors |
| 1224 | ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent |
| 1225 | Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor |
| 1226 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor |
| 1227 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
| 1228 | Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma |
| 1229 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
| 1230 | Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition |
| 1231 | Hysteresis behaviour of top-down fabricated ZnO nanowire transistors |
| 1232 | Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices |
| 1233 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
| 1234 | Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources |
| 1235 | Band alignment of Al2O3 with (-201) β-Ga2O3 |
| 1236 | Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors |
| 1237 | A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz |
| 1238 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
| 1239 | Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene |
| 1240 | Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition |
| 1241 | Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells |
| 1242 | Improvement of Gas-Sensing Performance of Large-Area Tungsten Disulfide Nanosheets by Surface Functionalization |
| 1243 | Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance |
| 1244 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
| 1245 | Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study |
| 1246 | Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition |
| 1247 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
| 1248 | From Precursor Chemistry to Gas Sensors: Plasma-Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications |
| 1249 | Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors |
| 1250 | Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures |
| 1251 | Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features |
| 1252 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
| 1253 | Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation |
| 1254 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
| 1255 | Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO2 and TiO2 |
| 1256 | Electrochemical Activation of Atomic Layer-Deposited Cobalt Phosphate Electrocatalysts for Water Oxidation |
| 1257 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
| 1258 | Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition |
| 1259 | Hafnia and alumina on sulphur passivated germanium |
| 1260 | Room-temperature and high-quality HfO2/SiO2 gate stacked film grown by neutral beam enhanced atomic layer deposition |
| 1261 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
| 1262 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 1263 | Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature |
| 1264 | Anti-stiction coating for mechanically tunable photonic crystal devices |
| 1265 | Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2 |
| 1266 | Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD |
| 1267 | Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils |
| 1268 | Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices |
| 1269 | Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time |
| 1270 | Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition |
| 1271 | PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads |
| 1272 | Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric |
| 1273 | The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges |
| 1274 | Electrically Excited Plasmonic Nanoruler for Biomolecule Detection |
| 1275 | Influence of Precursor Density and Conversion Time on the Orientation of Vapor-Deposited ZIF-8 |
| 1276 | On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies |
| 1277 | Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets |
