O₂, Oxygen, CAS# 7782-44-7

Plasma Enhanced Atomic Layer Deposition Film Publications

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Number	Title
1	Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
2	Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
3	'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
4	1D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
5	46-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
6	A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
7	A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
8	A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
9	A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
10	Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
11	Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
12	Advances in the fabrication of graphene transistors on flexible substrates
13	Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
14	Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
15	Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
16	Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
17	Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
18	Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
19	Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
20	ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
21	AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
22	AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
23	AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
24	Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
25	Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
26	Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
27	An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
28	Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
29	Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
30	Anti-stiction coating for mechanically tunable photonic crystal devices
31	Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
32	Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
33	Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
34	Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
35	Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
36	Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
37	Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
38	Band alignment of Al2O3 with (-201) β-Ga2O3
39	Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
40	Breakdown and Protection of ALD Moisture Barrier Thin Films
41	Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
42	Capacitance spectroscopy of gate-defined electronic lattices
43	Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
44	Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
45	Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
46	Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
47	Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
48	Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
49	Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
50	Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
51	Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
52	Charge effects of ultrafine FET with nanodot type floating gate
53	Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
54	Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
55	Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
56	Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
57	Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
58	Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
59	Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
60	Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
61	Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
62	Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
63	Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
64	Damage evaluation in graphene underlying atomic layer deposition dielectrics
65	DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
66	Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
67	Densification of Thin Aluminum Oxide Films by Thermal Treatments
68	Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
69	Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
70	Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
71	DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
72	Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
73	Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
74	Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
75	Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
76	Dynamic tuning of plasmon resonance in the visible using graphene
77	Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
78	Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
79	Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
80	Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
81	Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
82	Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
83	Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
84	Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
85	Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
86	Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
87	Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
88	Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
89	Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
90	Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
91	Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
92	Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
93	Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
94	Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
95	Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
96	Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
97	Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
98	Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
99	Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
100	Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
101	Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
102	Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
103	Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
104	Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
105	Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
106	Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
107	Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
108	Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
109	Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
110	Energy-enhanced atomic layer deposition for more process and precursor versatility
111	Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
112	Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
113	Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
114	Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
115	Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
116	Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
117	Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
118	Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
119	Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements
120	Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
121	Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
122	Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
123	Experimental verification of electro-refractive phase modulation in graphene
124	Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
125	Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
126	Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
127	Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
128	Fiber-matrix interface reinforcement using Atomic Layer Deposition
129	Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
130	Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
131	Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
132	Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
133	First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
134	Fixed-Gap Tunnel Junction for Reading DNA Nucleotides
135	Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
136	Flexible, light trapping substrates for organic photovoltaics
137	Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
138	Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
139	Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
140	Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
141	Hafnia and alumina on sulphur passivated germanium
142	High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
143	High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
144	High-efficiency embedded transmission grating
145	High-Reflective Coatings For Ground and Space Based Applications
146	High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
147	Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
148	Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
149	Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
150	Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
151	Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
152	Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
153	Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
154	Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
155	Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
156	Improved understanding of recombination at the Si/Al2O3 interface
157	Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
158	Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
159	Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
160	Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
161	Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
162	In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
163	In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
164	In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
165	Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
166	Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
167	Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
168	Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
169	Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
170	Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
171	Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
172	Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
173	Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
174	Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
175	Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
176	Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
177	Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
178	Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
179	Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
180	Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
181	Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
182	Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
183	Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
184	Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
185	Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
186	Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
187	Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
188	Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
189	Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
190	Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
191	Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
192	Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
193	Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
194	Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
195	Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
196	Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
197	Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
198	Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
199	Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
200	Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
201	Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
202	Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
203	Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
204	Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
205	Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
206	Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
207	Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
208	MANOS performance dependence on ALD Al2O3 oxidation source
209	Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
210	Mechanical properties of thin-film Parylene-metal-Parylene devices
211	Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
212	Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
213	Method of Fabrication for Encapsulated Polarizing Resonant Gratings
214	Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
215	Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
216	Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
217	Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
218	Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
219	Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
220	Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
221	Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
222	N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
223	Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
224	Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
225	Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
226	Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
227	Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
228	Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
229	Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
230	On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
231	On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
232	On the equilibrium concentration of boron-oxygen defects in crystalline silicon
233	On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
234	Optical display film as flexible and light trapping substrate for organic photovoltaics
235	Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
236	Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
237	Optimization of the Surface Structure on Black Silicon for Surface Passivation
238	Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
239	Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
240	Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
241	Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
242	Passivation effects of atomic-layer-deposited aluminum oxide
243	Patterned deposition by plasma enhanced spatial atomic layer deposition
244	PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
245	Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
246	Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
247	Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
248	Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
249	Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
250	Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
251	Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
252	Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
253	Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
254	Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
255	Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
256	Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
257	Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
258	Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
259	Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
260	Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
261	Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
262	Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
263	Propagation Effects in Carbon Nanoelectronics
264	Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
265	Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
266	Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
267	Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
268	Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
269	Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
270	Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
271	Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
272	Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
273	Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
274	Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
275	Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
276	Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
277	Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
278	Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
279	Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
280	Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
281	Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
282	Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
283	Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
284	Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
285	Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
286	Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
287	Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
288	Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
289	Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
290	Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
291	Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
292	Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
293	Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
294	Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
295	Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
296	Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
297	The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
298	The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
299	The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
300	Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
301	Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
302	Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
303	Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
304	TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
305	Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
306	Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects
307	Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
308	Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
309	Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
310	Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
311	Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
312	Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
313	Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
314	Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
315	Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
316	Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
317	Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
318	Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
319	Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
320	Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
321	Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
322	Very high frequency plasma reactant for atomic layer deposition
323	Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
324	Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
325	Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
326	Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
327	Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
328	Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
329	Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
330	Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
331	Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
332	Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
333	Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
334	Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
335	Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
336	Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
337	Composite materials and nanoporous thin layers made by atomic layer deposition
338	Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
339	Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
340	Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
341	Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
342	Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
343	Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
344	Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
345	Optical and Electrical Properties of AlxTi1-xO Films
346	Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
347	Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
348	Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
349	Atomic Layer Deposition of Gold Metal
350	Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
351	Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
352	Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
353	Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
354	High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
355	Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
356	Plasma-enhanced atomic layer deposition of BaTiO3
357	Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
358	Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
359	Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
360	Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction
361	Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition
362	A multifunctional biphasic water splitting catalyst tailored for integration with high-performance semiconductor photoanodes
363	Atomic layer deposition of Co3O4 on carbon nanotubes/carbon cloth for high-capacitance and ultrastable supercapacitor electrode
364	Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction
365	Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer
366	Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
367	Efficient and Sustained Photoelectrochemical Water Oxidation by Cobalt Oxide/Silicon Photoanodes with Nanotextured Interfaces
368	Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation
369	Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition
370	Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition
371	Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
372	Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
373	Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
374	Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films
375	Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
376	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
377	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
378	Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
379	Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition
380	Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
381	Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits
382	Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition
383	Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
384	Controlled erbium incorporation and photoluminescence of Er-doped Y2O3
385	Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure
386	Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition
387	Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
388	Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides
389	Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
390	Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition
391	Plasma enhanced atomic layer deposition of Fe2O3 thin films
392	Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
393	Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films
394	Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
395	The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
396	Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
397	Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
398	Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
399	Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
400	Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
401	Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
402	Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
403	Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
404	Plasma enhanced atomic layer deposition of Ga2O3 thin films
405	Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
406	Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
407	RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
408	Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
409	Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition
410	Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD)
411	Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
412	Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
413	Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
414	Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
415	Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
416	Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
417	Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
418	Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
419	Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
420	Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
421	A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
422	An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
423	Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
424	Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
425	Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
426	Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
427	Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
428	AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
429	Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
430	Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
431	Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
432	Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
433	Characteristics of HfO2 thin films grown by plasma atomic layer deposition
434	Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
435	Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
436	Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
437	Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
438	Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
439	Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
440	Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
441	Damage evaluation in graphene underlying atomic layer deposition dielectrics
442	Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
443	Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
444	Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
445	Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
446	Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
447	Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
448	Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
449	Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
450	Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
451	Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
452	Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
453	Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
454	Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
455	Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
456	Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
457	Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
458	Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
459	Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
460	Hafnia and alumina on sulphur passivated germanium
461	HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
462	Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
463	Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
464	Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
465	Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
466	In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
467	Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
468	Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents
469	Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
470	Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
471	Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
472	Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
473	Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
474	Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
475	Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
476	Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
477	Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
478	Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
479	Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
480	Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
481	Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
482	Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
483	Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
484	Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
485	Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition
486	Optical properties and bandgap evolution of ALD HfSiOx films
487	Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
488	PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
489	Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
490	Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
491	Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
492	Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
493	Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
494	Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
495	Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
496	Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
497	Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
498	Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
499	Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
500	Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
501	Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
502	Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
503	The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
504	The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
505	The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
506	The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
507	The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process
508	Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
509	Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
510	Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
511	Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
512	Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
513	Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
514	Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
515	Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
516	Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
517	Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
518	Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
519	Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
520	Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
521	HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
522	Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
523	The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
524	Annealing behavior of ferroelectric Si-doped HfO2 thin films
525	Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
526	Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
527	Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
528	Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
529	Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
530	Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
531	Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
532	Optical properties and bandgap evolution of ALD HfSiOx films
533	TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
534	The effects of layering in ferroelectric Si-doped HfO2 thin films
535	Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
536	Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
537	Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
538	Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
539	Antireflection In2O3 coatings of self-organized TiO2 nanotube layers prepared by atomic layer deposition
540	Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation
541	Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
542	Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
543	High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
544	High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
545	Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
546	Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
547	On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
548	Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
549	Exploiting atomic layer deposition for fabricating sub-10nm X-ray lenses
550	High-resolution, high-aspect-ratio iridium-nickel composite nanoimprint molds
551	Systematic efficiency study of line-doubled zone plates
552	TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
553	IrO2 Nanodot Formation by Plasma Enhanced Atomic Layer Deposition as a Charge Storage Layer
554	Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
555	Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
556	Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
557	Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
558	Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
559	Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
560	Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application
561	The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
562	Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
563	Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition
564	Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
565	Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
566	Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition
567	Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries
568	Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
569	In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
570	Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
571	Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
572	Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
573	Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
574	Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
575	Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
576	Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
577	Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
578	The important role of water in growth of monolayer transition metal dichalcogenides
579	Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
580	Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
581	Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
582	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
583	Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
584	Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma
585	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
586	Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
587	Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
588	Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
589	Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
590	Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation
591	Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
592	Catalytic Combustion and Dehydrogenation Reactions during Atomic Layer Deposition of Platinum
593	Efficient Catalytic Microreactors with Atomic-Layer-Deposited Platinum Nanoparticles on Oxide Support
594	Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
595	Encapsulation method for atom probe tomography analysis of nanoparticles
596	Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
597	Growth of silica nanowires in vacuum
598	In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
599	Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
600	Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
601	Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
602	Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
603	Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches
604	Remote Plasma ALD of Platinum and Platinum Oxide Films
605	Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
606	Room-Temperature Atomic Layer Deposition of Platinum
607	Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
608	Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions
609	Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions
610	Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
611	Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
612	Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
613	Surface reactions during atomic layer deposition of Pt derived from gas phase infrared spectroscopy
614	Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity
615	The size effect of titania-supported Pt nanoparticles on the electrocatalytic activity towards methanol oxidation reaction primarily via the bifunctional mechanism
616	Remote Plasma ALD of Platinum and Platinum Oxide Films
617	Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
618	Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
619	Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
620	Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
621	Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
622	Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper
623	High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
624	Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
625	In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
626	Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
627	Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions
628	Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions
629	Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
630	Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
631	(Invited) Characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 Capacitors
632	ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
633	Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma
634	Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor
635	Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
636	Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
637	Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
638	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
639	Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
640	Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
641	Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
642	'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
643	A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
644	A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
645	Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
646	Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
647	Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
648	Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
649	Applications of nanoNewton dielectrophoretic forces using atomic layer deposited oxides for microfluidic sample preparation and proteomics
650	Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
651	Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle
652	Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
653	Atomic layer deposition of metal-oxide thin films on cellulose fibers
654	Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3
655	Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
656	Breakdown and Protection of ALD Moisture Barrier Thin Films
657	Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
658	Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
659	Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
660	Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer
661	Comparative study of ALD SiO2 thin films for optical applications
662	Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
663	Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
664	Designing high performance precursors for atomic layer deposition of silicon oxide
665	Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide
666	Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
667	Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
668	Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition
669	Energy-enhanced atomic layer deposition for more process and precursor versatility
670	Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance
671	Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions
672	Fabrication of nanoporous membranes for tuning microbial interactions and biochemical reactions
673	Gate Insulator for High Mobility Oxide TFT
674	Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
675	High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
676	High-Reflective Coatings For Ground and Space Based Applications
677	Improved film quality of plasma enhanced atomic layer deposition SiO2 using plasma treatment cycle
678	Index matching at the nanoscale: light scattering by core-shell Si/SiOx nanowires
679	Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
680	Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
681	Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors
682	Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
683	Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes
684	Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
685	Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
686	Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
687	Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
688	Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
689	Modal properties of a strip-loaded horizontal slot waveguide
690	Multiplexed actuation using ultra dielectrophoresis for proteomics applications: a comprehensive electrical and electrothermal design methodology
691	Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition
692	Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
693	Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors
694	On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
695	On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
696	Optical properties and bandgap evolution of ALD HfSiOx films
697	PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
698	Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
699	Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
700	Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
701	Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
702	Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
703	Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material
704	Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor
705	Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current
706	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
707	Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
708	Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2
709	Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
710	Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
711	Simultaneous scanning tunneling microscopy and synchrotron X-ray measurements in a gas environment
712	Single-Cell Photonic Nanocavity Probes
713	Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
714	Spectral analysis of sidewall roughness during resist-core self-aligned double patterning integration
715	Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach
716	Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)
717	Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
718	Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
719	Symmetrical Al2O3-based passivation layers for p- and n-type silicon
720	Theoretical Understanding of the Reaction Mechanism of SiO2 Atomic Layer Deposition
721	Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
722	Trapped charge densities in Al2O3-based silicon surface passivation layers
723	Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
724	Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
725	A New Hole Transport Material for Efficient Perovskite Solar Cells With Reduced Device Cost
726	Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
727	Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
728	Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
729	Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
730	Cost-effective hole transporting material for stable and efficient perovskite solar cells with fill factors up to 82%
731	Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
732	Gas sensing properties in epitaxial SnO2 films grown on TiO2 single crystals with various orientations
733	In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
734	Low-bandgap mixed tin-lead iodide perovskite absorbers with long carrier lifetimes for all-perovskite tandem solar cells
735	Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
736	Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells
737	Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
738	SnO2 nanotubes fabricated using electrospinning and atomic layer deposition and their gas sensing performance
739	Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
740	Surface and sensing properties of PE-ALD SnO2 thin film
741	Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries
742	Water Vapor Treatment of Low-Temperature Deposited SnO2 Electron Selective Layers for Efficient Flexible Perovskite Solar Cells
743	Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
744	Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
745	Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
746	Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
747	Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
748	Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
749	Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
750	Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
751	Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
752	Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
753	Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
754	Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices
755	Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
756	Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
757	Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
758	Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
759	Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
760	Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
761	Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
762	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
763	Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
764	Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
765	Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
766	Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
767	Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
768	Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
769	Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
770	Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
771	Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
772	Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
773	Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma
774	Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
775	Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
776	Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
777	Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
778	Trilayer Tunnel Selectors for Memristor Memory Cells
779	Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
780	Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
781	A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
782	Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
783	An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
784	Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
785	Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
786	Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme
787	Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices
788	Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
789	Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
790	Atomic layer deposition of titanium dioxide using titanium tetrachloride and titanium tetraisopropoxide as precursors
791	Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
792	Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
793	Band alignment of atomic layer deposited TiO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy
794	Biofilm prevention on cochlear implants
795	Bipolar resistive switching in amorphous titanium oxide thin film
796	Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
797	Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
798	Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
799	Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
800	Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
801	Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition
802	Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
803	Effect of Crystal Structure and Grain Size on Photo-Catalytic Activities of Remote-Plasma Atomic Layer Deposited Titanium Oxide Thin Film
804	Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition
805	Effects of TiO2 Interfacial Atomic Layers on Device Performances and Exciton Dynamics in ZnO Nanorod Polymer Solar Cells
806	Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
807	Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
808	Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications
809	Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
810	Employing Overlayers To Improve the Performance of Cu2BaSnS4 Thin Film based Photoelectrochemical Water Reduction Devices
811	Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
812	Energy-enhanced atomic layer deposition for more process and precursor versatility
813	Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
814	Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
815	Epitaxial 1D electron transport layers for high-performance perovskite solar cells
816	Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification
817	Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
818	Flexible Memristive Memory Array on Plastic Substrates
819	Flexible Perovskite Photovoltaic Modules and Solar Cells Based on Atomic Layer Deposited Compact Layers and UV-Irradiated TiO2 Scaffolds on Plastic Substrates
820	Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition
821	Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method
822	Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
823	Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
824	Growth Temperature Dependence of TiO2 Thin Films Prepared by Using Plasma-Enhanced Atomic Layer Deposition Method
825	Half-wave phase retarder working in transmission around 630nm realized by atomic layer deposition of sub-wavelength gratings
826	High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
827	High-efficiency embedded transmission grating
828	Highly efficient and bending durable perovskite solar cells: toward a wearable power source
829	Highly reflective polymeric substrates functionalized utilizing atomic layer deposition
830	Impedance spectroscopy analysis on the effects of TiO2 interfacial atomic layers in ZnO nanorod polymer solar cells: Effects of interfacial charge extraction on diffusion and recombination
831	Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
832	In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
833	In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
834	In-gap states in titanium dioxide and oxynitride atomic layer deposited films
835	Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
836	Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS
837	Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
838	Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition
839	Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics
840	Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
841	Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
842	Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
843	Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
844	Low temperature temporal and spatial atomic layer deposition of TiO2 films
845	Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
846	Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
847	Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range
848	Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
849	On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
850	Opportunities of Atomic Layer Deposition for Perovskite Solar Cells
851	Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
852	Oxygen migration in TiO2-based higher-k gate stacks
853	Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
854	Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
855	Photovoltaic Rudorffites: Lead-Free Silver Bismuth Halides Alternative to Hybrid Lead Halide Perovskites
856	Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
857	Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2
858	Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
859	Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
860	Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
861	Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
862	Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
863	Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
864	Radical Enhanced Atomic Layer Deposition of Titanium Dioxide
865	Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
866	Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode
867	Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition
868	Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
869	Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
870	Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
871	Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
872	Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
873	Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
874	Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
875	The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
876	The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells
877	The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
878	The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
879	Thermal and plasma enhanced atomic layer deposition of TiO2: Comparison of spectroscopic and electric properties
880	Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
881	TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
882	Transient characterization of the electroforming process in TiO2 based resistive switching devices
883	Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
884	Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
885	X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect
886	Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
887	Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
888	Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
889	Optical and Electrical Properties of TixSi1-xOy Films
890	Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
891	Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
892	Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
893	Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
894	Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
895	Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition
896	Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
897	Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material
898	Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques
899	Improvement of Gas-Sensing Performance of Large-Area Tungsten Disulfide Nanosheets by Surface Functionalization
900	In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
901	Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
902	Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
903	The important role of water in growth of monolayer transition metal dichalcogenides
904	Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells
905	Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
906	Very High Refractive Index Transition Metal Dichalcogenide Photonic Conformal Coatings by Conversion of ALD Metal Oxides
907	Controlled erbium incorporation and photoluminescence of Er-doped Y2O3
908	Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells
909	Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure
910	Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
911	Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
912	Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides
913	Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate
914	Effect of anode morphology on the performance of thin film solid oxide fuel cell with PEALD YSZ electrolyte
915	Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells
916	Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate
917	Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte
918	Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
919	Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
920	Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
921	Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
922	Characteristics of ZnO Thin Films by Means of Plasma Enhanced Atomic Layer Deposition
923	Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
924	Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
925	Efficient Modification of Metal Oxide Surfaces with Phosphonic Acids by Spray Coating
926	Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD
927	Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
928	Employing Overlayers To Improve the Performance of Cu2BaSnS4 Thin Film based Photoelectrochemical Water Reduction Devices
929	Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays
930	Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
931	Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
932	Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
933	Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
934	Hysteresis behaviour of top-down fabricated ZnO nanowire transistors
935	Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
936	Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
937	Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study
938	Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition
939	Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
940	Plasma enhanced atomic layer deposition and laser plasma deposition of ultra-thin ZnO films for Schottky barrier devices
941	Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition
942	Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
943	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
944	Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
945	Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration
946	Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
947	Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
948	Spectroscopy and control of near-surface defects in conductive thin film ZnO
949	Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
950	Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces
951	The "Pure Marriage" between 3D Printing and Well-Ordered Nanoarrays by Using PEALD Assisted Hydrothermal Surface Engineering
952	The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
953	The Effects of an O2 Plasma on the Optical Properties of Atomic Layer Deposited ZnO
954	The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
955	The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges
956	Top-down fabricated ZnO nanowire transistors for application in biosensors
957	Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature
958	Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell
959	Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
960	ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition
961	Plasma-enhanced atomic layer deposition of zinc phosphate
962	Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
963	Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
964	Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
965	Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
966	Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
967	Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
968	Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
969	Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD
970	Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
971	Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition
972	Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells
973	Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
974	Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
975	High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
976	Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
977	Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
978	Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
979	Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
980	Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
981	Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
982	Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
983	PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
984	PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
985	PEALD ZrO2 Films Deposition on TiN and Si Substrates
986	Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition
987	Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
988	Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
989	Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells
990	Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
991	Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
992	Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
993	Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
994	The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition
995	The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
996	Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
997	Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
998	ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
999	ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
1000	ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium
1001	Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
1002	Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
1003	Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
1004	Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation

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