1 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
2 | Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization |
3 | 'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition |
4 | 1D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices |
5 | 46-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor |
6 | A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz |
7 | A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD |
8 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
9 | A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films |
10 | A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer |
11 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
12 | Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells |
13 | Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors |
14 | Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers |
15 | Advances in the fabrication of graphene transistors on flexible substrates |
16 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
17 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
18 | Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition |
19 | Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing |
20 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
21 | Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation |
22 | Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition |
23 | ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent |
24 | AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD |
25 | AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD |
26 | AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants |
27 | Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources |
28 | Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact |
29 | Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties |
30 | An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD |
31 | Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length |
32 | Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy |
33 | Anti-stiction coating for mechanically tunable photonic crystal devices |
34 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
35 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
36 | Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN |
37 | Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices |
38 | Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films |
39 | Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source |
40 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
41 | Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure |
42 | Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell |
43 | Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition |
44 | Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions |
45 | Band alignment of Al2O3 with (-201) β-Ga2O3 |
46 | Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer |
47 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
48 | Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C |
49 | Capacitance spectroscopy of gate-defined electronic lattices |
50 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
51 | Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment |
52 | Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks |
53 | Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method |
54 | Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition |
55 | Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer |
56 | Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range |
57 | Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide |
58 | Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition |
59 | Charge effects of ultrafine FET with nanodot type floating gate |
60 | Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications |
61 | Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment |
62 | Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene |
63 | Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C |
64 | Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition |
65 | Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition |
66 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
67 | Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition |
68 | Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing |
69 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
70 | Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide |
71 | Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation |
72 | Damage evaluation in graphene underlying atomic layer deposition dielectrics |
73 | DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air |
74 | Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process |
75 | Densification of Thin Aluminum Oxide Films by Thermal Treatments |
76 | Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices |
77 | Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor |
78 | Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters |
79 | DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors |
80 | Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films |
81 | Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition |
82 | Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films |
83 | Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures |
84 | Dynamic tuning of plasmon resonance in the visible using graphene |
85 | Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films |
86 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
87 | Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors |
88 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
89 | Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 |
90 | Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET |
91 | Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor |
92 | Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer |
93 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
94 | Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems |
95 | Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures |
96 | Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems |
97 | Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films |
98 | Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors |
99 | Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells |
100 | Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer |
101 | Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure |
102 | Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications |
103 | Electrical characterization of the slow boron oxygen defect component in Czochralski silicon |
104 | Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates |
105 | Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3 |
106 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
107 | Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition |
108 | Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition |
109 | Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon |
110 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
111 | Electrically Excited Plasmonic Nanoruler for Biomolecule Detection |
112 | Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer |
113 | Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films |
114 | Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces |
115 | Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells |
116 | Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment |
117 | Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films |
118 | Energy-enhanced atomic layer deposition for more process and precursor versatility |
119 | Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films |
120 | Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries |
121 | Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells |
122 | Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process |
123 | Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces |
124 | Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors |
125 | Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess |
126 | Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density |
127 | Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements |
128 | Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs |
129 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
130 | Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film |
131 | Experimental verification of electro-refractive phase modulation in graphene |
132 | Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric |
133 | Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier |
134 | Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils |
135 | Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 |
136 | Fiber-matrix interface reinforcement using Atomic Layer Deposition |
137 | Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation |
138 | Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures |
139 | Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V |
140 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
141 | Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells |
142 | First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina |
143 | Fixed-Gap Tunnel Junction for Reading DNA Nucleotides |
144 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
145 | Flexible, light trapping substrates for organic photovoltaics |
146 | Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique |
147 | Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition |
148 | Graphene based on-chip variable optical attenuator operating at 855 nm wavelength |
149 | Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides |
150 | Hafnia and alumina on sulphur passivated germanium |
151 | High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits |
152 | High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films |
153 | High-efficiency embedded transmission grating |
154 | High-Reflective Coatings For Ground and Space Based Applications |
155 | High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3 |
156 | Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition |
157 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
158 | Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks |
159 | Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC) |
160 | Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon |
161 | Impact of interface materials on side permeation in indirect encapsulation of organic electronics |
162 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
163 | Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches |
164 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
165 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
166 | Improved understanding of recombination at the Si/Al2O3 interface |
167 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
168 | Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs |
169 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
170 | Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium |
171 | Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures |
172 | In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors |
173 | In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3 |
174 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
175 | Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge |
176 | Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells |
177 | Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor |
178 | Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors |
179 | Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface |
180 | Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe |
181 | Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3 |
182 | Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate |
183 | Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications |
184 | Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone |
185 | Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors |
186 | Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD |
187 | Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3 |
188 | Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition |
189 | Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition |
190 | Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3 |
191 | Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect? |
192 | Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments |
193 | Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene |
194 | Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices |
195 | Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells |
196 | Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition |
197 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
198 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
199 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
200 | Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs |
201 | Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells |
202 | Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface |
203 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
204 | Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si |
205 | Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity |
206 | Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications |
207 | Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing |
208 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
209 | Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation |
210 | Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon |
211 | Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers |
212 | Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films |
213 | Lithium-Iron (III) Fluoride Battery with Double Surface Protection |
214 | Localized defect states and charge trapping in atomic layer deposited-Al2O3 films |
215 | Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices |
216 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
217 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
218 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
219 | Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage |
220 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
221 | Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes |
222 | MANOS performance dependence on ALD Al2O3 oxidation source |
223 | Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si |
224 | Mechanical properties of thin-film Parylene-metal-Parylene devices |
225 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
226 | Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells |
227 | Method of Fabrication for Encapsulated Polarizing Resonant Gratings |
228 | Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection |
229 | Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber |
230 | Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers |
231 | Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system |
232 | Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition |
233 | Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures |
234 | Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor |
235 | MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion |
236 | Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor |
237 | N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes |
238 | Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices |
239 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
240 | Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories |
241 | Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors |
242 | Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques |
243 | Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC |
244 | Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications |
245 | Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma |
246 | On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation |
247 | On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies |
248 | On the equilibrium concentration of boron-oxygen defects in crystalline silicon |
249 | On the role of nanoporosity in controlling the performance of moisture permeation barrier layers |
250 | On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR |
251 | Optical display film as flexible and light trapping substrate for organic photovoltaics |
252 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
253 | Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition |
254 | Optimization of the Surface Structure on Black Silicon for Surface Passivation |
255 | Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption |
256 | Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes |
257 | Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks |
258 | Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops |
259 | Passivation effects of atomic-layer-deposited aluminum oxide |
260 | Patterned deposition by plasma enhanced spatial atomic layer deposition |
261 | PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads |
262 | Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition |
263 | Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition |
264 | Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells |
265 | Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating |
266 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
267 | Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments |
268 | Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors |
269 | Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films |
270 | Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic |
271 | Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets |
272 | Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics |
273 | Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature |
274 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
275 | Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications |
276 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
277 | Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor |
278 | Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries |
279 | Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene |
280 | Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration |
281 | Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition |
282 | Propagation Effects in Carbon Nanoelectronics |
283 | Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition |
284 | Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3 |
285 | Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center |
286 | Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing |
287 | Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3 |
288 | Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition |
289 | Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors |
290 | Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors |
291 | Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application |
292 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
293 | Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces |
294 | Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition |
295 | Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers |
296 | Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride |
297 | Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks |
298 | Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition |
299 | Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact |
300 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
301 | Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen |
302 | Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon |
303 | Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature |
304 | Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells |
305 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
306 | Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics |
307 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
308 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
309 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
310 | Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy |
311 | Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3 |
312 | Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide |
313 | Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition |
314 | Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million |
315 | Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers |
316 | Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting |
317 | Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime |
318 | The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition |
319 | The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides |
320 | The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain |
321 | Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates |
322 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
323 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
324 | Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides |
325 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
326 | Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses |
327 | Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects |
328 | Toward reliable MIS- and MOS-gate structures for GaN lateral power devices |
329 | Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal |
330 | Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration |
331 | Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content |
332 | Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing |
333 | Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers |
334 | Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries |
335 | Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection |
336 | Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 |
337 | Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor |
338 | Ultrathin Surface Coating Enables the Stable Sodium Metal Anode |
339 | Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers |
340 | Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization |
341 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
342 | Using top graphene layer as sacrificial protection during dielectric atomic layer deposition |
343 | Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors |
344 | Very high frequency plasma reactant for atomic layer deposition |
345 | Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement |
346 | Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions |
347 | Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition |
348 | Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films |
349 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
350 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
351 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
352 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
353 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
354 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
355 | Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition |
356 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
357 | Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment |
358 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
359 | Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate |
360 | Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions |
361 | Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy |
362 | Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition |
363 | Composite materials and nanoporous thin layers made by atomic layer deposition |
364 | Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition |
365 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
366 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
367 | Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition |
368 | Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition |
369 | Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal |
370 | Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique |
371 | Optical and Electrical Properties of AlxTi1-xO Films |
372 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
373 | Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants |
374 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
375 | Atomic Layer Deposition of Gold Metal |
376 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
377 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
378 | Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon |
379 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
380 | Plasma-enhanced atomic layer deposition of BaTiO3 |
381 | High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films |
382 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
383 | Plasma-enhanced atomic layer deposition of BaTiO3 |
384 | Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition |
385 | Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition |
386 | Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition |
387 | Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasma |
388 | Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction |
389 | Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition |
390 | A multifunctional biphasic water splitting catalyst tailored for integration with high-performance semiconductor photoanodes |
391 | Atomic layer deposition of Co3O4 on carbon nanotubes/carbon cloth for high-capacitance and ultrastable supercapacitor electrode |
392 | Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reaction |
393 | Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer |
394 | Co/CoP Nanoparticles Encapsulated Within N, P-Doped Carbon Nanotubes on Nanoporous Metal-Organic Framework Nanosheets for Oxygen Reduction and Oxygen Evolution Reactions |
395 | Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition |
396 | Efficient and Sustained Photoelectrochemical Water Oxidation by Cobalt Oxide/Silicon Photoanodes with Nanotextured Interfaces |
397 | Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation |
398 | Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition |
399 | Photocatalytic Properties of Co3O4-Coated TiO2 Powders Prepared by Plasma-Enhanced Atomic Layer Deposition |
400 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film |
401 | Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films |
402 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
403 | Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films |
404 | Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy |
405 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
406 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
407 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
408 | Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition |
409 | Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement |
410 | Nanostructure and temperature-dependent photoluminescence of Er-doped Y2O3 thin films for micro-optoelectronic integrated circuits |
411 | Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition |
412 | Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement |
413 | Controlled erbium incorporation and photoluminescence of Er-doped Y2O3 |
414 | Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure |
415 | Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition |
416 | Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals |
417 | Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides |
418 | Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation |
419 | Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2 |
420 | Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition |
421 | Plasma enhanced atomic layer deposition of Fe2O3 thin films |
422 | Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition |
423 | Synthesis of single-walled carbon nanotubes from atomic-layer-deposited Co3O4 and Co3O4/Fe2O3 catalyst films |
424 | Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2 |
425 | Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices |
426 | The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition |
427 | Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors |
428 | Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma |
429 | Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions |
430 | Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition |
431 | Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications |
432 | Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD) |
433 | Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy |
434 | Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma |
435 | Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition |
436 | Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition |
437 | Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition |
438 | Plasma enhanced atomic layer deposition of Ga2O3 thin films |
439 | Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge |
440 | Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy |
441 | RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma |
442 | Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride |
443 | Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition |
444 | Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD) |
445 | Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide |
446 | Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications |
447 | Properties of HfAlO film deposited by plasma enhanced atomic layer deposition |
448 | Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping |
449 | Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition |
450 | Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films |
451 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
452 | Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks |
453 | Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties |
454 | Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition |
455 | A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems |
456 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
457 | Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures |
458 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
459 | Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation |
460 | Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma |
461 | Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics |
462 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
463 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
464 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
465 | Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer |
466 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
467 | Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma |
468 | Characteristics of HfO2 thin films grown by plasma atomic layer deposition |
469 | Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique |
470 | Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates |
471 | Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate |
472 | Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition |
473 | Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers |
474 | Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials |
475 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
476 | Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods |
477 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
478 | Damage evaluation in graphene underlying atomic layer deposition dielectrics |
479 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
480 | Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures |
481 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
482 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
483 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
484 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments |
485 | Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films |
486 | Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2 |
487 | Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2 |
488 | Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods |
489 | Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition |
490 | Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics |
491 | Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN |
492 | Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations |
493 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
494 | Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma |
495 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
496 | Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures |
497 | Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy |
498 | Hafnia and alumina on sulphur passivated germanium |
499 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
500 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
501 | Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency |
502 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
503 | Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium |
504 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
505 | Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge |
506 | Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents |
507 | Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources |
508 | Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method |
509 | Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition |
510 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
511 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
512 | Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon |
513 | Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time |
514 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
515 | Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications |
516 | Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements |
517 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
518 | Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition |
519 | Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties |
520 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
521 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
522 | Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection |
523 | Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition |
524 | Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices |
525 | On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR |
526 | Optical properties and bandgap evolution of ALD HfSiOx films |
527 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
528 | PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases |
529 | Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation |
530 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
531 | Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric |
532 | Properties of HfAlO film deposited by plasma enhanced atomic layer deposition |
533 | Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices |
534 | Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen |
535 | Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4 |
536 | Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures |
537 | Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD |
538 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
539 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
540 | Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System |
541 | Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
542 | Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping |
543 | The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices |
544 | The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation |
545 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
546 | The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures |
547 | The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process |
548 | Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma |
549 | Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition |
550 | Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors |
551 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
552 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
553 | Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor |
554 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
555 | Using top graphene layer as sacrificial protection during dielectric atomic layer deposition |
556 | Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2 |
557 | Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics |
558 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
559 | Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer |
560 | Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations |
561 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
562 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
563 | The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation |
564 | Annealing behavior of ferroelectric Si-doped HfO2 thin films |
565 | Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3 |
566 | Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3 |
567 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
568 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
569 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
570 | Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes |
571 | Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition |
572 | Optical properties and bandgap evolution of ALD HfSiOx films |
573 | TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films |
574 | The effects of layering in ferroelectric Si-doped HfO2 thin films |
575 | Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures |
576 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
577 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
578 | Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films |
579 | New insights on the chemistry of plasma-enhanced atomic layer deposition of indium oxysulfide thin films and their use as buffer layers in Cu(In,Ga)Se2 thin film solar cell |
580 | Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells |
581 | Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement |
582 | All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process |
583 | Antireflection In2O3 coatings of self-organized TiO2 nanotube layers prepared by atomic layer deposition |
584 | Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation |
585 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
586 | Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma |
587 | High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition |
588 | High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition |
589 | Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films |
590 | Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application |
591 | On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies |
592 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
593 | Exploiting atomic layer deposition for fabricating sub-10nm X-ray lenses |
594 | High-resolution, high-aspect-ratio iridium-nickel composite nanoimprint molds |
595 | Measurement and compensation of misalignment in double-sided hard X-ray Fresnel zone plates |
596 | Systematic efficiency study of line-doubled zone plates |
597 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
598 | IrO2 Nanodot Formation by Plasma Enhanced Atomic Layer Deposition as a Charge Storage Layer |
599 | Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films |
600 | Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition |
601 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
602 | Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition |
603 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
604 | Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition |
605 | Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application |
606 | The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD |
607 | XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films |
608 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
609 | Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition |
610 | Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3 |
611 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
612 | Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries |
613 | Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition |
614 | Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries |
615 | Remote Plasma Atomic Layer Deposition of Thin Films of Electrochemically Active LiCoO2 |
616 | Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries |
617 | Electrochemical Performance of Lithium-Nickel Oxide Thin Films Obtained with Use of Atomic Layer Deposition |
618 | Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition |
619 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
620 | Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires |
621 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
622 | Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma |
623 | Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation |
624 | Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer |
625 | Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells |
626 | Molybdenum Disulfide Catalytic Coatings via Atomic Layer Deposition for Solar Hydrogen Production from Copper Gallium Diselenide Photocathodes |
627 | Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells |
628 | Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers |
629 | The important role of water in growth of monolayer transition metal dichalcogenides |
630 | Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer |
631 | Alloyed 2D Metal-Semiconductor Atomic Layer Junctions |
632 | Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films |
633 | Macro-conformality of coatings deposited using high-speed spatial plasma-enhanced atomic layer deposition |
634 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
635 | Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films |
636 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
637 | Atomic Layer Deposition of Lithium-Nickel-Silicon Oxide Cathode Material for Thin-Film Lithium-Ion Batteries |
638 | Atomic scale surface modification of TiO2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis |
639 | Characteristics of NiO films prepared by atomic layer deposition using bis(ethylcyclopentadienyl)-Ni and O2 plasma |
640 | Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors |
641 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
642 | Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas |
643 | Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition |
644 | Development and characterization of an atmospheric pressure plasma reactor compatible with spatial ALD |
645 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
646 | Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions |
647 | Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer |
648 | Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation |
649 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
650 | Catalytic Combustion and Dehydrogenation Reactions during Atomic Layer Deposition of Platinum |
651 | Efficient Catalytic Microreactors with Atomic-Layer-Deposited Platinum Nanoparticles on Oxide Support |
652 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
653 | Encapsulation method for atom probe tomography analysis of nanoparticles |
654 | Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy |
655 | Growth of silica nanowires in vacuum |
656 | In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd |
657 | Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition |
658 | Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition |
659 | Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma |
660 | Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops |
661 | Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches |
662 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
663 | Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films |
664 | Room-Temperature Atomic Layer Deposition of Platinum |
665 | Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers |
666 | Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions |
667 | Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions |
668 | Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition |
669 | Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode |
670 | Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition |
671 | Surface reactions during atomic layer deposition of Pt derived from gas phase infrared spectroscopy |
672 | Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity |
673 | The size effect of titania-supported Pt nanoparticles on the electrocatalytic activity towards methanol oxidation reaction primarily via the bifunctional mechanism |
674 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
675 | Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films |
676 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
677 | Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application |
678 | Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor |
679 | Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas |
680 | Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper |
681 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
682 | Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors |
683 | In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd |
684 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
685 | Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions |
686 | Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions |
687 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
688 | Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition |
689 | (Invited) Characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 Capacitors |
690 | ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications |
691 | Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma |
692 | Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor |
693 | Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films |
694 | Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition |
695 | Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors |
696 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
697 | Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing |
698 | Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes |
699 | Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon |
700 | Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition |
701 | 'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition |
702 | 3D structure evolution using metastable atomic layer deposition based on planar silver templates |
703 | A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD |
704 | A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology |
705 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
706 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
707 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
708 | An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon |
709 | Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1-x)2O3 for x = 0.25-0.74 |
710 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
711 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
712 | Applications of nanoNewton dielectrophoretic forces using atomic layer deposited oxides for microfluidic sample preparation and proteomics |
713 | Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition |
714 | Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle |
715 | Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators |
716 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
717 | Atomic layer deposition of metal-oxide thin films on cellulose fibers |
718 | Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3 |
719 | Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3 |
720 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
721 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
722 | Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics |
723 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
724 | Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer |
725 | Comparative study of ALD SiO2 thin films for optical applications |
726 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
727 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
728 | Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor |
729 | Designing high performance precursors for atomic layer deposition of silicon oxide |
730 | Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices |
731 | Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide |
732 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
733 | Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 |
734 | Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition |
735 | Energy-enhanced atomic layer deposition for more process and precursor versatility |
736 | Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance |
737 | Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions |
738 | Fabrication of nanoporous membranes for tuning microbial interactions and biochemical reactions |
739 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
740 | Gate Insulator for High Mobility Oxide TFT |
741 | Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor |
742 | High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical |
743 | High-Reflective Coatings For Ground and Space Based Applications |
744 | Improved film quality of plasma enhanced atomic layer deposition SiO2 using plasma treatment cycle |
745 | Index matching at the nanoscale: light scattering by core-shell Si/SiOx nanowires |
746 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
747 | Internal Photoemission Spectroscopy Measurements of the Energy Barrier Heights between ALD SiO2 and Ta-Based Amorphous Metals |
748 | Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes |
749 | Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors |
750 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
751 | Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors |
752 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
753 | Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes |
754 | Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma |
755 | Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications |
756 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
757 | Macro-conformality of coatings deposited using high-speed spatial plasma-enhanced atomic layer deposition |
758 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
759 | Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition |
760 | Modal properties of a strip-loaded horizontal slot waveguide |
761 | Multiplexed actuation using ultra dielectrophoresis for proteomics applications: a comprehensive electrical and electrothermal design methodology |
762 | Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns |
763 | Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition |
764 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
765 | Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors |
766 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
767 | On the role of nanoporosity in controlling the performance of moisture permeation barrier layers |
768 | Optical properties and bandgap evolution of ALD HfSiOx films |
769 | PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads |
770 | Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells |
771 | Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors |
772 | Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System |
773 | Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties |
774 | Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2 |
775 | Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material |
776 | Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor |
777 | Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current |
778 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
779 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
780 | Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2 |
781 | Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma |
782 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
783 | Simultaneous scanning tunneling microscopy and synchrotron X-ray measurements in a gas environment |
784 | Single-Cell Photonic Nanocavity Probes |
785 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
786 | Spectral analysis of sidewall roughness during resist-core self-aligned double patterning integration |
787 | Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach |
788 | Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01) |
789 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
790 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
791 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
792 | Theoretical Understanding of the Reaction Mechanism of SiO2 Atomic Layer Deposition |
793 | Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors |
794 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
795 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
796 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
797 | Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System |
798 | A New Hole Transport Material for Efficient Perovskite Solar Cells With Reduced Device Cost |
799 | Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
800 | Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries |
801 | Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2 |
802 | Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries |
803 | Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films |
804 | Cost-effective hole transporting material for stable and efficient perovskite solar cells with fill factors up to 82% |
805 | Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing |
806 | Gas sensing properties in epitaxial SnO2 films grown on TiO2 single crystals with various orientations |
807 | In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition |
808 | Low-bandgap mixed tin-lead iodide perovskite absorbers with long carrier lifetimes for all-perovskite tandem solar cells |
809 | Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells |
810 | Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells |
811 | Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma |
812 | SnO2 nanotubes fabricated using electrospinning and atomic layer deposition and their gas sensing performance |
813 | Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD |
814 | Surface and sensing properties of PE-ALD SnO2 thin film |
815 | Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries |
816 | Water Vapor Treatment of Low-Temperature Deposited SnO2 Electron Selective Layers for Efficient Flexible Perovskite Solar Cells |
817 | Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD |
818 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
819 | Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films |
820 | Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition |
821 | Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source |
822 | Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4 |
823 | Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD) |
824 | Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor |
825 | Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD |
826 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
827 | Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
828 | Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices |
829 | Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition |
830 | Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices |
831 | Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes |
832 | Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films |
833 | Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source |
834 | Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4 |
835 | Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry |
836 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
837 | Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors |
838 | Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas |
839 | Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants |
840 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
841 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
842 | Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates |
843 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
844 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
845 | Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition |
846 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
847 | Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma |
848 | Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage |
849 | Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps |
850 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
851 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
852 | Topographically selective deposition |
853 | Trilayer Tunnel Selectors for Memristor Memory Cells |
854 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
855 | Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications |
856 | A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application |
857 | Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation |
858 | An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor |
859 | Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy |
860 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
861 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
862 | Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme |
863 | Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices |
864 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
865 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
866 | Atomic layer deposition of titanium dioxide using titanium tetrachloride and titanium tetraisopropoxide as precursors |
867 | Atomic structure of conducting nanofilaments in TiO2 resistive switching memory |
868 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
869 | Band alignment of atomic layer deposited TiO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy |
870 | Biofilm prevention on cochlear implants |
871 | Bipolar resistive switching in amorphous titanium oxide thin film |
872 | Characteristics of TiO2 Films Prepared by ALD With and Without Plasma |
873 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
874 | Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C |
875 | Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories |
876 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
877 | Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition |
878 | Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors |
879 | Effect of Crystal Structure and Grain Size on Photo-Catalytic Activities of Remote-Plasma Atomic Layer Deposited Titanium Oxide Thin Film |
880 | Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition |
881 | Effects of TiO2 Interfacial Atomic Layers on Device Performances and Exciton Dynamics in ZnO Nanorod Polymer Solar Cells |
882 | Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition |
883 | Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition |
884 | Electrical characteristics of Ga2O3-TiO2 nanomixed films grown by plasma-enhanced atomic-layer deposition for gate dielectric applications |
885 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
886 | Employing Overlayers To Improve the Performance of Cu2BaSnS4 Thin Film based Photoelectrochemical Water Reduction Devices |
887 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
888 | Energy-enhanced atomic layer deposition for more process and precursor versatility |
889 | Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition |
890 | Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate |
891 | Epitaxial 1D electron transport layers for high-performance perovskite solar cells |
892 | Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification |
893 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
894 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
895 | Flexible Memristive Memory Array on Plastic Substrates |
896 | Flexible Perovskite Photovoltaic Modules and Solar Cells Based on Atomic Layer Deposited Compact Layers and UV-Irradiated TiO2 Scaffolds on Plastic Substrates |
897 | Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition |
898 | Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method |
899 | Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma |
900 | Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition |
901 | Growth Temperature Dependence of TiO2 Thin Films Prepared by Using Plasma-Enhanced Atomic Layer Deposition Method |
902 | Half-wave phase retarder working in transmission around 630nm realized by atomic layer deposition of sub-wavelength gratings |
903 | High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films |
904 | High-efficiency embedded transmission grating |
905 | Highly efficient and bending durable perovskite solar cells: toward a wearable power source |
906 | Highly reflective polymeric substrates functionalized utilizing atomic layer deposition |
907 | Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition |
908 | Impact of interface materials on side permeation in indirect encapsulation of organic electronics |
909 | Impedance spectroscopy analysis on the effects of TiO2 interfacial atomic layers in ZnO nanorod polymer solar cells: Effects of interfacial charge extraction on diffusion and recombination |
910 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
911 | In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices |
912 | In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition |
913 | In-gap states in titanium dioxide and oxynitride atomic layer deposited films |
914 | Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor |
915 | Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS |
916 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
917 | Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition |
918 | Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics |
919 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
920 | Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2 |
921 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
922 | Lithium-Iron (III) Fluoride Battery with Double Surface Protection |
923 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
924 | Low temperature temporal and spatial atomic layer deposition of TiO2 films |
925 | Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source |
926 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
927 | Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range |
928 | MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion |
929 | Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques |
930 | On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies |
931 | Opportunities of Atomic Layer Deposition for Perovskite Solar Cells |
932 | Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition |
933 | Oxygen migration in TiO2-based higher-k gate stacks |
934 | Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition |
935 | Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition |
936 | Photovoltaic Rudorffites: Lead-Free Silver Bismuth Halides Alternative to Hybrid Lead Halide Perovskites |
937 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
938 | Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2 |
939 | Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications |
940 | Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application |
941 | Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma |
942 | Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4 |
943 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
944 | Plasma-enhanced atomic layer deposition of BaTiO3 |
945 | Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants |
946 | Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry |
947 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide |
948 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
949 | Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode |
950 | Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition |
951 | Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films |
952 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
953 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
954 | Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy |
955 | Study on the resistive switching time of TiO2 thin films |
956 | Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films |
957 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
958 | Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide |
959 | Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting |
960 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
961 | The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells |
962 | The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain |
963 | The role of plasma in plasma-enhanced atomic layer deposition of crystalline films |
964 | The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges |
965 | Thermal and plasma enhanced atomic layer deposition of TiO2: Comparison of spectroscopic and electric properties |
966 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
967 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
968 | Transient characterization of the electroforming process in TiO2 based resistive switching devices |
969 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
970 | Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source |
971 | X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect |
972 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
973 | Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition |
974 | Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries |
975 | Optical and Electrical Properties of TixSi1-xOy Films |
976 | Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD |
977 | Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation |
978 | Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5 |
979 | Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide |
980 | Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition |
981 | Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition |
982 | Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition |
983 | Plasma-enhanced atomic layer deposition of vanadium phosphate as a lithium-ion battery electrode material |
984 | Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques |
985 | Improvement of Gas-Sensing Performance of Large-Area Tungsten Disulfide Nanosheets by Surface Functionalization |
986 | In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells |
987 | Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition |
988 | Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma |
989 | Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry |
990 | The important role of water in growth of monolayer transition metal dichalcogenides |
991 | Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells |
992 | Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting |
993 | Very High Refractive Index Transition Metal Dichalcogenide Photonic Conformal Coatings by Conversion of ALD Metal Oxides |
994 | Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection |
995 | Controlled erbium incorporation and photoluminescence of Er-doped Y2O3 |
996 | Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells |
997 | Er coordination in Y2O3 thin films studied by extended x-ray absorption fine structure |
998 | Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals |
999 | Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition |
1000 | Surface reaction kinetics of metal β-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides |
1001 | Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate |
1002 | Effect of anode morphology on the performance of thin film solid oxide fuel cell with PEALD YSZ electrolyte |
1003 | Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells |
1004 | Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate |
1005 | Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte |
1006 | A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density |
1007 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
1008 | All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process |
1009 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
1010 | Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition |
1011 | Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition |
1012 | Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition |
1013 | Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant |
1014 | Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition |
1015 | Efficient Modification of Metal Oxide Surfaces with Phosphonic Acids by Spray Coating |
1016 | Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD |
1017 | Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications |
1018 | Employing Overlayers To Improve the Performance of Cu2BaSnS4 Thin Film based Photoelectrochemical Water Reduction Devices |
1019 | Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays |
1020 | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
1021 | Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition |
1022 | From Precursor Chemistry to Gas Sensors: Plasma-Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications |
1023 | Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma |
1024 | Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD |
1025 | Hysteresis behaviour of top-down fabricated ZnO nanowire transistors |
1026 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
1027 | Initial Growth and Crystallization Onset of Plasma Enhanced-Atomic Layer Deposited ZnO |
1028 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
1029 | Opto-chemical control through thermal treatment of plasma enhanced atomic layer deposited ZnO: An in situ study |
1030 | Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition |
1031 | Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate |
1032 | Plasma enhanced atomic layer deposition and laser plasma deposition of ultra-thin ZnO films for Schottky barrier devices |
1033 | Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition |
1034 | Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc |
1035 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
1036 | Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications |
1037 | Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration |
1038 | Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition |
1039 | Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition |
1040 | Spectroscopy and control of near-surface defects in conductive thin film ZnO |
1041 | Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition |
1042 | Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces |
1043 | The "Pure Marriage" between 3D Printing and Well-Ordered Nanoarrays by Using PEALD Assisted Hydrothermal Surface Engineering |
1044 | The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition |
1045 | The Effects of an O2 Plasma on the Optical Properties of Atomic Layer Deposited ZnO |
1046 | The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor |
1047 | The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges |
1048 | Top-down fabricated ZnO nanowire transistors for application in biosensors |
1049 | Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature |
1050 | Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell |
1051 | Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions |
1052 | ZnO Thin Films Fabricated by Plasma-Assisted Atomic Layer Deposition |
1053 | ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition: Material Properties Within and Outside the "Atomic Layer Deposition Window" |
1054 | Plasma-enhanced atomic layer deposition of zinc phosphate |
1055 | Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma |
1056 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
1057 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
1058 | Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method |
1059 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
1060 | Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors |
1061 | Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials |
1062 | Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process |
1063 | Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD |
1064 | Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability |
1065 | Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
1066 | Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells |
1067 | Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN |
1068 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
1069 | High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates |
1070 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
1071 | Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs |
1072 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
1073 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
1074 | Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing |
1075 | Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors |
1076 | Lithium-Iron (III) Fluoride Battery with Double Surface Protection |
1077 | Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium |
1078 | Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes |
1079 | PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor |
1080 | PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen |
1081 | PEALD ZrO2 Films Deposition on TiN and Si Substrates |
1082 | Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition |
1083 | Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition |
1084 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
1085 | Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells |
1086 | Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices |
1087 | Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD |
1088 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
1089 | Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications |
1090 | The Cut-Off Phenomenon Effect on ZrO2 Growth Using Remote Plasma-Enhanced Atomic Layer Deposition |
1091 | The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films |
1092 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
1093 | Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors |
1094 | XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films |
1095 | ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method |
1096 | ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition |
1097 | ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium |
1098 | Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition |
1099 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
1100 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
1101 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |