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Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition

Type:
Journal
Info:
J. Vac. Sci. Technol. A 33(1), Jan/Feb 2015
Date:
2014-10-22
DOI:
http://dx.doi.org/10.1116/1.4900935

Author Information

Name Institution
Duo CaoChinese Academy of Sciences

Films

Plasma HfO2

Hardware used: Unknown
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma La2O3

Hardware used: Unknown
tris(bis[trimethylsilyl]amido) lanthanum, La[N(TMS)2]3
CAS#: 175923-07-6
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Substrates

Notes

208