Unknown Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
2Al2O3/TiO2 nanolaminate gate dielectric films with enhanced electrical performances for organic field-effect transistors
3Gate Insulator for High Mobility Oxide TFT
4Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
5Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
6Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
7Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer
8Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
9Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
10Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
11Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
12Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
13Fabrication of Highly Ordered and Well-Aligned PbTiO3/TiN Core-Shell Nanotube Arrays
14Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
15High performance AlGaN/GaN HEMTs with AlN/SiNx passivation
16Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs
17ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
18Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
19Optimization of the Surface Structure on Black Silicon for Surface Passivation
20Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
21Dynamic tuning of plasmon resonance in the visible using graphene
22Electrical Characteristics of p-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-nm Phosphosilicate Glass
23Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
24Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
25AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film
26Oxygen migration in TiO2-based higher-k gate stacks
27Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition
28Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
29AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate
30Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
31Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
32Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
33Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
34Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
35Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
36Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
37Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas
38Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
39High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
40Impedance spectroscopy analysis on the effects of TiO2 interfacial atomic layers in ZnO nanorod polymer solar cells: Effects of interfacial charge extraction on diffusion and recombination
41Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
42Junction-less nanowire based photodetector: Role of nanowire width
43Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films
44Detecting structural variances of Co3O4 catalysts by controlling beam-induced sample alterations in the vacuum of a transmission electron microscope
45650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode
46Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
47Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper
48Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
49Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
50Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
51Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
52Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
53Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
54Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
55Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
56Plasma enhanced atomic layer deposition of SiNx:H and SiO2
57Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
58High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
59Fabrication and Characterization of an Extended-Gate AlGaN/GaN-Based Heterostructure Field-Effect Transistor-Type Biosensor for Detecting Immobilized Streptavidin-Biotin Protein Complexes
60Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
61Understanding and Eliminating Hysteresis for Highly Efficient Planar Perovskite Solar Cells
62Effects of TiO2 Interfacial Atomic Layers on Device Performances and Exciton Dynamics in ZnO Nanorod Polymer Solar Cells
63Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells
64Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
65Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
66Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
67Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP)
683D structure evolution using metastable atomic layer deposition based on planar silver templates
69Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
70Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
71Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
72Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation
73Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
74Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
75Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
76Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
77Fabrication of Si3N4-Based Artificial Basilar Membrane with ZnO Nanopillar Using MEMS Process
78Growth of silica nanowires in vacuum
79Experimental verification of electro-refractive phase modulation in graphene
80A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
81Forming-free metal-oxide ReRAM by oxygen ion implantation process
82Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View
83Formation of Ni silicide from atomic layer deposited Ni
84A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement
85Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
86Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs
87GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope
88Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability
89Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
90Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
91Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
92Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
93Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
94Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
95Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
96Nitride memristors
97Disrupted Attosecond Charge Carrier Delocalization at a Hybrid Organic/Inorganic Semiconductor Interface
98High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
99Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling
100Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
101On the equilibrium concentration of boron-oxygen defects in crystalline silicon
102Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
103Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
104Electronic Conduction Mechanisms in Insulators
105Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
1063D-Branched ZnO/CdS Nanowire Arrays for Solar Water Splitting and the Service Safety Research
107Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
108Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
109Transient characterization of the electroforming process in TiO2 based resistive switching devices
110Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
111Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
112A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
113Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
114ALD TaN Barrier for Enhanced Performance with Low Contact Resistance for 14nm Technology Node Cu Interconnects
115High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure
116Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
117Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
118Surface Etching of TiO2 Thin Films Using High Density Cl2/Ar Plasma
119Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
120PEALD YSZ-based bilayer electrolyte for thin film-solid oxide fuel cells
121On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
122Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
123Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
124Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
125Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
126Theoretical Understanding of the Reaction Mechanism of SiO2 Atomic Layer Deposition
127Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
128SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
129Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
130Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
131High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF4/Ar plasma
132Highly reflective polymeric substrates functionalized utilizing atomic layer deposition
133IrO2 Nanodot Formation by Plasma Enhanced Atomic Layer Deposition as a Charge Storage Layer
134Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
135Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
136Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
137Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
138Growth of ZnO nanorods on fluorine-doped tin oxide substrate without catalyst by radio-frequency magnetron sputtering
139Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
140Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
141Graphene photodetectors with a bandwidth >76 GHz fabricated in a 6" wafer process line
142Surface and sensing properties of PE-ALD SnO2 thin film
143Chemically-tunable ultrathin silsesquiazane interlayer for n-type and p-type organic transistors on flexible plastic
144Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
145Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
146Reliability and parasitic issues in GaN-based power HEMTs: a review
147Passivation of Al2O3/TiO2 on monocrystalline Si with relatively low reflectance
148Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
149Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of Al2O3
150Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
151High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
152Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
153Two-stage permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
154Electrical Characteristics of Multilayer MoS2 FET's with MoS2/Graphene Heterojunction Contacts
155High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
156Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
157Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
158Oxide Vertical TFTs for the Application to the Ultra High Resolution Display
159Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
160A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
161Highly efficient and bending durable perovskite solar cells: toward a wearable power source
162Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
163Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
164Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
165Non-destructive acoustic metrology and void detection in 3x50μm TSV
166A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
167Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
168Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
169Low-thermal budget flash light annealing for Al2O3 surface passivation
170Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
171Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
172Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
173Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook
174ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
175Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
176Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition
177Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene
178Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
179Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
180Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
181Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
182RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
183Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability
184Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
185Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material
186Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
187Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
188Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
189Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
190Dynamic threshold voltage influence on Ge pMOSFET hysteresis
191Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
192Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
193Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
194Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications
195High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
196Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
197Energy transformation of plasmonic photocatalytic oxidation on 1D quantum well of platinum thin film
198Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
199Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
200Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
201Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
202TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
203Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
204Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
205Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition
206Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
207TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
208Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
209Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
210The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
211Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
212Photovoltaic Rudorffites: Lead-Free Silver Bismuth Halides Alternative to Hybrid Lead Halide Perovskites
213An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
214Anisotropic Inter-Poly Dielectric technology for conventional floating gate type flash memory
215Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
216Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
217Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
218Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing
219Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation
220Improved understanding of recombination at the Si/Al2O3 interface
221Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes
222Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
223Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
224Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
225Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
226Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current
227Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
228Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
229Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors
230Room temperature CO2 detection using interdigitated capacitors with heteropolysiloxane sensing films
231Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
232Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
233Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications
234Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
235Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
236High Performance CoOx/Si Photoanodes: Accessing Structural Disorder for Improved Catalytic Activity via Atomic Layer Deposition
237Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition
238Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
239High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
240Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
241Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
242Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges
243Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
244X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect
245New grating concepts in the NIR and SWIR spectral band for high resolution earth-observation spectrometers
246Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches
247Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2
248High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
249Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
250Graphene-based MMIC process development and RF passives design
251DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures
252Schottky Barrier Height Reduction at Interface Between GZO Transparent Electrode and InP/InGaAs Structure by Zinc Driven-in Step and Nickel Oxide Insertion
253New materials for memristive switching
254Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
255DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
256A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
257Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
258PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
259PEALD of Copper using New Precursors for Next Generation of Interconnections
260Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
261AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
262Surface oxidation model in plasma enhanced atomic layer deposition for silicon oxide films including various aminosilane precursors
263Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
264Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters
265Atomic layer deposition of Pd and Pt nanoparticles for catalysis: on the mechanisms of nanoparticle formation
266Bipolar resistive switching in amorphous titanium oxide thin film
267Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
268Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
269Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
270Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
271Capacitance spectroscopy of gate-defined electronic lattices
272Lifetimes exceeding 1ms in 1-Ohm-cm boron-doped Cz-silicon
273Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
274All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
275Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
276Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
277Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate
278Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
279Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
280Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
281Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
282Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor
283Via sidewall insulation for through cell via contacts
284Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
285Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
286Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
287Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
288Chemical reactions during plasma-enhanced atomic layer deposition of SiO2 films employing aminosilane and O2/Ar plasma at 50°C
289Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
290Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
291Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
292Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
293Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation
294Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer
295Half-wave phase retarder working in transmission around 630nm realized by atomic layer deposition of sub-wavelength gratings
296Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process
297Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
298SnO2 nanotubes fabricated using electrospinning and atomic layer deposition and their gas sensing performance
299Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
300Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
301Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
302Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
303Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices
304Negative differential resistance in the I-V curves of Al2O3/AlGaN/GaN MIS structures
305Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
306Charge effects of ultrafine FET with nanodot type floating gate
307Simultaneous Roll Transfer and Interconnection of Flexible Silicon NAND Flash Memory
308Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
309Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
310Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
311Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
312Epitaxial 1D electron transport layers for high-performance perovskite solar cells
313Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
314Plasma-Enhanced Atomic Layer Deposition Processed Amorphous Indium Zinc Oxide Thin-Film Transistor for Ultra-High Definition Display Application
315Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
316A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
317Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
318Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
319Graphene-based bimorphs for micron-sized, autonomous origami machines
320Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
321Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
322Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
323Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
324Spectroscopy and control of near-surface defects in conductive thin film ZnO
325Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
326Plasma-enhanced atomic layer deposition for plasmonic TiN
327Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
328Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
329Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode
330Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
331Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
332Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
333Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity
334CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories
335Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
336Partitioning Electrostatic and Mechanical Domains in Nanoelectromechanical Relays
337The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
338Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
339Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
340Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
341Silicon nanowire networks for multi-stage thermoelectric modules
342Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
343Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions
344In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
345Trilayer Tunnel Selectors for Memristor Memory Cells
346Anti-stiction coating for mechanically tunable photonic crystal devices
347Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
348Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
349Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator
350600 V High-Performance AlGaN/GaN HEMTs with AlN/SiNx Passivation
351Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
352Liquid-phase-deposited siloxane-based capping layers for silicon solar cells
353Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
354Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
355Effect of Plasma Power of Plasma Enhanced Atomic Layer Deposition Process for Gate Insulator Deposition in Top-Gate Thin-Film Transistors
356Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
357Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
358Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
359Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
360Simultaneous scanning tunneling microscopy and synchrotron X-ray measurements in a gas environment
361Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
362Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
363Fast Flexible Plastic Substrate ZnO Circuits
364Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
365CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
366Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
367Symmetrical Al2O3-based passivation layers for p- and n-type silicon
368Study on the resistive switching time of TiO2 thin films
369Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs
370Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
371Understanding and optimizing the floating body retention in FDSOI UTBOX
372Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
373Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
374Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
375Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
376Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
377AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
378Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
379Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
380Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
381Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
382Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
383823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
384Mesoporous perovskite solar cells and the role of nanoscale compact layers for remarkable all-round high efficiency under both indoor and outdoor illumination
385Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
386Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
387(Invited) Characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 Capacitors
388Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash