| 1 | Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition |
| 2 | Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source |
| 3 | Liquid-phase-deposited siloxane-based capping layers for silicon solar cells |
| 4 | Toward reliable MIS- and MOS-gate structures for GaN lateral power devices |
| 5 | Fast Flexible Plastic Substrate ZnO Circuits |
| 6 | Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors |
| 7 | Lifetimes exceeding 1ms in 1-Ohm-cm boron-doped Cz-silicon |
| 8 | (Invited) Characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 Capacitors |
| 9 | Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors |
| 10 | Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology |
| 11 | Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition |
| 12 | Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications |
| 13 | Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer |
| 14 | Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes |
| 15 | Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes |
| 16 | Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition |
| 17 | Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects |
| 18 | Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells |
| 19 | Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells |
| 20 | Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP) |
| 21 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
| 22 | High performance AlGaN/GaN HEMTs with AlN/SiNx passivation |
| 23 | Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers |
| 24 | Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films |
| 25 | Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity |
| 26 | Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition |
| 27 | Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena |
| 28 | Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess |
| 29 | Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis |
| 30 | Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas |
| 31 | Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries |
| 32 | Improved understanding of recombination at the Si/Al2O3 interface |
| 33 | 823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric |
| 34 | Two-stage permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon |
| 35 | Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation |
| 36 | Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride |
| 37 | Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current |
| 38 | PEALD of Copper using New Precursors for Next Generation of Interconnections |
| 39 | Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors |
| 40 | Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer |
| 41 | Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator |
| 42 | In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition |
| 43 | Via sidewall insulation for through cell via contacts |
| 44 | Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches |
| 45 | Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions |
| 46 | Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing |
| 47 | Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors |
| 48 | 600 V High-Performance AlGaN/GaN HEMTs with AlN/SiNx Passivation |
| 49 | Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex |
| 50 | SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition |
| 51 | Plasma enhanced atomic layer deposition of SiNx:H and SiO2 |
| 52 | Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors |
| 53 | RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma |
| 54 | Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests |
| 55 | Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition |
| 56 | Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration |
| 57 | CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm |
| 58 | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
| 59 | Understanding and Eliminating Hysteresis for Highly Efficient Planar Perovskite Solar Cells |
| 60 | Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT |
| 61 | Plasma-Enhanced Atomic Layer Deposition of Zirconium Oxide Thin Films and Its Application to Solid Oxide Fuel Cells |
| 62 | Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition |
| 63 | Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition |
| 64 | Plasma-enhanced atomic layer deposition for plasmonic TiN |
| 65 | Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate |
| 66 | Forming-free metal-oxide ReRAM by oxygen ion implantation process |
| 67 | Nitride memristors |
| 68 | Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure |
| 69 | Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook |
| 70 | Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition |
| 71 | Schottky Barrier Height Reduction at Interface Between GZO Transparent Electrode and InP/InGaAs Structure by Zinc Driven-in Step and Nickel Oxide Insertion |
| 72 | Capacitance spectroscopy of gate-defined electronic lattices |
| 73 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
| 74 | Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors |
| 75 | Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition |
| 76 | Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash |
| 77 | Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal |
| 78 | Graphene-based bimorphs for micron-sized, autonomous origami machines |
| 79 | Transient characterization of the electroforming process in TiO2 based resistive switching devices |
| 80 | Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment |
| 81 | Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures |
| 82 | Graphene based on-chip variable optical attenuator operating at 855 nm wavelength |
| 83 | Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs |
| 84 | Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier |
| 85 | Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process |
| 86 | Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics |
| 87 | Al2O3/TiO2 nanolaminate gate dielectric films with enhanced electrical performances for organic field-effect transistors |
| 88 | Effects of TiO2 Interfacial Atomic Layers on Device Performances and Exciton Dynamics in ZnO Nanorod Polymer Solar Cells |
| 89 | High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF4/Ar plasma |
| 90 | Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films |
| 91 | Fabrication of Highly Ordered and Well-Aligned PbTiO3/TiN Core-Shell Nanotube Arrays |
| 92 | Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources |
| 93 | Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition |
| 94 | Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe |
| 95 | Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors |
| 96 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
| 97 | Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors |
| 98 | Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant |
| 99 | Optimization of the Surface Structure on Black Silicon for Surface Passivation |
| 100 | Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing |
| 101 | Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements |
| 102 | Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices |
| 103 | Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell |
| 104 | Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition |
| 105 | ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs |
| 106 | Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors |
| 107 | Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime |
| 108 | Atomic layer controlled deposition of silicon nitride with self-limiting mechanism |
| 109 | Highly efficient and bending durable perovskite solar cells: toward a wearable power source |
| 110 | Negative differential resistance in the I-V curves of Al2O3/AlGaN/GaN MIS structures |
| 111 | Growth of ZnO nanorods on fluorine-doped tin oxide substrate without catalyst by radio-frequency magnetron sputtering |
| 112 | Epitaxial 1D electron transport layers for high-performance perovskite solar cells |
| 113 | Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware |
| 114 | Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier |
| 115 | Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors |
| 116 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 117 | ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition |
| 118 | Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material |
| 119 | Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition |
| 120 | Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications |
| 121 | Graphene photodetectors with a bandwidth >76 GHz fabricated in a 6" wafer process line |
| 122 | Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors |
| 123 | Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization |
| 124 | Fabrication of Si3N4-Based Artificial Basilar Membrane with ZnO Nanopillar Using MEMS Process |
| 125 | Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories |
| 126 | Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor |
| 127 | Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes |
| 128 | Low-thermal budget flash light annealing for Al2O3 surface passivation |
| 129 | Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD |
| 130 | Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2 |
| 131 | Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si |
| 132 | Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition |
| 133 | Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing |
| 134 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
| 135 | Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition |
| 136 | Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics |
| 137 | All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process |
| 138 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
| 139 | Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor |
| 140 | Silicon nanowire networks for multi-stage thermoelectric modules |
| 141 | Room temperature CO2 detection using interdigitated capacitors with heteropolysiloxane sensing films |
| 142 | AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate |
| 143 | Electrical Characteristics of Multilayer MoS2 FET's with MoS2/Graphene Heterojunction Contacts |
| 144 | 650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode |
| 145 | High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits |
| 146 | Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks |
| 147 | A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu |
| 148 | ALD TaN Barrier for Enhanced Performance with Low Contact Resistance for 14nm Technology Node Cu Interconnects |
| 149 | Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics |
| 150 | The Properties of Cu Thin Films on Ru Depending on the ALD Temperature |
| 151 | New grating concepts in the NIR and SWIR spectral band for high resolution earth-observation spectrometers |
| 152 | High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge |
| 153 | CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories |
| 154 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
| 155 | Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition |
| 156 | Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition |
| 157 | Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode |
| 158 | Atomic Layer Deposition of SiN for spacer applications in high-end logic devices |
| 159 | Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures |
| 160 | Surface oxidation model in plasma enhanced atomic layer deposition for silicon oxide films including various aminosilane precursors |
| 161 | Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates |
| 162 | Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process |
| 163 | Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 |
| 164 | A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor |
| 165 | Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes |
| 166 | Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor |
| 167 | Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs |
| 168 | Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers |
| 169 | Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate |
| 170 | Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric |
| 171 | Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3 |
| 172 | On the equilibrium concentration of boron-oxygen defects in crystalline silicon |
| 173 | Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System |
| 174 | Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers |
| 175 | High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition |
| 176 | Surface and sensing properties of PE-ALD SnO2 thin film |
| 177 | DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors |
| 178 | Dynamic tuning of plasmon resonance in the visible using graphene |
| 179 | Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction |
| 180 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
| 181 | Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer |
| 182 | Formation of Ni silicide from atomic layer deposited Ni |
| 183 | Dynamic threshold voltage influence on Ge pMOSFET hysteresis |
| 184 | Atomic layer deposition of Pd and Pt nanoparticles for catalysis: on the mechanisms of nanoparticle formation |
| 185 | Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process |
| 186 | Chemically-tunable ultrathin silsesquiazane interlayer for n-type and p-type organic transistors on flexible plastic |
| 187 | Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films |
| 188 | Mesoporous perovskite solar cells and the role of nanoscale compact layers for remarkable all-round high efficiency under both indoor and outdoor illumination |
| 189 | Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing |
| 190 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
| 191 | New materials for memristive switching |
| 192 | Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs |
| 193 | Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD |
| 194 | Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition |
| 195 | Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films |
| 196 | Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition |
| 197 | On the Trail Ancient Worlds: Comparative Study of Commercial Scandium and Yttrium Precursors, Asgard, Midgard, Vanaheim and Olympus |
| 198 | Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack |
| 199 | Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries |
| 200 | Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane |
| 201 | Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes |
| 202 | Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers |
| 203 | Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors |
| 204 | Highly reflective polymeric substrates functionalized utilizing atomic layer deposition |
| 205 | PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases |
| 206 | Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor |
| 207 | Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors |
| 208 | X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect |
| 209 | AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film |
| 210 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
| 211 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 212 | Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene |
| 213 | Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma |
| 214 | Non-destructive acoustic metrology and void detection in 3x50μm TSV |
| 215 | Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs |
| 216 | Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors |
| 217 | Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer |
| 218 | Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces |
| 219 | Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs |
| 220 | Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation |
| 221 | Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films |
| 222 | Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature |
| 223 | Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition |
| 224 | Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 225 | Study on the resistive switching time of TiO2 thin films |
| 226 | Spectroscopy and control of near-surface defects in conductive thin film ZnO |
| 227 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
| 228 | Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells |
| 229 | A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems |
| 230 | Bipolar resistive switching in amorphous titanium oxide thin film |
| 231 | Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning |
| 232 | Detecting structural variances of Co3O4 catalysts by controlling beam-induced sample alterations in the vacuum of a transmission electron microscope |
| 233 | Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition |
| 234 | Junction-less nanowire based photodetector: Role of nanowire width |
| 235 | Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors |
| 236 | Theoretical Understanding of the Reaction Mechanism of SiO2 Atomic Layer Deposition |
| 237 | A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement |
| 238 | Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions |
| 239 | Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 |
| 240 | Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode |
| 241 | Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters |
| 242 | Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition |
| 243 | Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier |
| 244 | Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier |
| 245 | Anisotropic Inter-Poly Dielectric technology for conventional floating gate type flash memory |
| 246 | Understanding and optimizing the floating body retention in FDSOI UTBOX |
| 247 | Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View |
| 248 | Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation |
| 249 | Passivation of Al2O3/TiO2 on monocrystalline Si with relatively low reflectance |
| 250 | GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope |
| 251 | Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films |
| 252 | Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides |
| 253 | Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2 |
| 254 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
| 255 | Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
| 256 | Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas |
| 257 | Gate Insulator for High Mobility Oxide TFT |
| 258 | Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors |
| 259 | Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks |
| 260 | Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability |
| 261 | Simultaneous scanning tunneling microscopy and synchrotron X-ray measurements in a gas environment |
| 262 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
| 263 | Experimental verification of electro-refractive phase modulation in graphene |
| 264 | Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure |
| 265 | Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects |
| 266 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 267 | Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition |
| 268 | Reliability and parasitic issues in GaN-based power HEMTs: a review |
| 269 | Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si |
| 270 | Properties of HfAlO film deposited by plasma enhanced atomic layer deposition |
| 271 | High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy |
| 272 | Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing |
| 273 | Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment |
| 274 | Anti-stiction coating for mechanically tunable photonic crystal devices |
| 275 | Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications |
| 276 | High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition |
| 277 | Photovoltaic Rudorffites: Lead-Free Silver Bismuth Halides Alternative to Hybrid Lead Halide Perovskites |
| 278 | Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method |
| 279 | IrO2 Nanodot Formation by Plasma Enhanced Atomic Layer Deposition as a Charge Storage Layer |
| 280 | Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications |
| 281 | Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique |
| 282 | Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier |
| 283 | Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 284 | Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric |
| 285 | Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor |
| 286 | Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique |
| 287 | Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation |
| 288 | Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer |
| 289 | Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability |
| 290 | Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer |
| 291 | Graphene-based MMIC process development and RF passives design |
| 292 | Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories |
| 293 | Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition |
| 294 | Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films |
| 295 | Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V |
| 296 | Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils |
| 297 | Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma |
| 298 | Impedance spectroscopy analysis on the effects of TiO2 interfacial atomic layers in ZnO nanorod polymer solar cells: Effects of interfacial charge extraction on diffusion and recombination |
| 299 | Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs |
| 300 | Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate |
| 301 | Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3 |
| 302 | Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes |
| 303 | Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer |
| 304 | Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy |
| 305 | On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation |
| 306 | High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films |
| 307 | Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization |
| 308 | Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer |
| 309 | 3D structure evolution using metastable atomic layer deposition based on planar silver templates |
| 310 | SnO2 nanotubes fabricated using electrospinning and atomic layer deposition and their gas sensing performance |
| 311 | Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells |
| 312 | Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers |
| 313 | Half-wave phase retarder working in transmission around 630nm realized by atomic layer deposition of sub-wavelength gratings |
| 314 | Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs |
| 315 | Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications |
| 316 | Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment |
| 317 | Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane |
| 318 | Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks |
| 319 | Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate |
| 320 | Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN |
| 321 | Electronic Conduction Mechanisms in Insulators |
| 322 | A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance |
| 323 | Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma |
| 324 | Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges |
| 325 | Fabrication and Characterization of an Extended-Gate AlGaN/GaN-Based Heterostructure Field-Effect Transistor-Type Biosensor for Detecting Immobilized Streptavidin-Biotin Protein Complexes |
| 326 | Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of Al2O3 |
| 327 | Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect |
| 328 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
| 329 | The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition |
| 330 | Disrupted Attosecond Charge Carrier Delocalization at a Hybrid Organic/Inorganic Semiconductor Interface |
| 331 | Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper |
| 332 | High Performance CoOx/Si Photoanodes: Accessing Structural Disorder for Improved Catalytic Activity via Atomic Layer Deposition |
| 333 | Plasma-Enhanced Atomic Layer Deposition Processed Amorphous Indium Zinc Oxide Thin-Film Transistor for Ultra-High Definition Display Application |
| 334 | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
| 335 | Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks |
| 336 | Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures |
| 337 | Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon |
| 338 | Partitioning Electrostatic and Mechanical Domains in Nanoelectromechanical Relays |
| 339 | Electrical characterization of the slow boron oxygen defect component in Czochralski silicon |
| 340 | Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights |
| 341 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
| 342 | PEALD YSZ-based bilayer electrolyte for thin film-solid oxide fuel cells |
| 343 | A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect |
| 344 | High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure |
| 345 | Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor |
| 346 | Evaluation of Stress Induced by Plasma Assisted ALD SiN Film |
| 347 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
| 348 | Growth of silica nanowires in vacuum |
| 349 | High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD |
| 350 | Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma |
| 351 | Simultaneous Roll Transfer and Interconnection of Flexible Silicon NAND Flash Memory |
| 352 | Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects |
| 353 | DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures |
| 354 | Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors |
| 355 | Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices |
| 356 | AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs |
| 357 | A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology |
| 358 | Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation |
| 359 | Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V |
| 360 | Oxide Vertical TFTs for the Application to the Ultra High Resolution Display |
| 361 | Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET |
| 362 | Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition |
| 363 | Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides |
| 364 | Trilayer Tunnel Selectors for Memristor Memory Cells |
| 365 | Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition |
| 366 | Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer |
| 367 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 368 | Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods |
| 369 | Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer |
| 370 | 3D-Branched ZnO/CdS Nanowire Arrays for Solar Water Splitting and the Service Safety Research |
| 371 | Surface Etching of TiO2 Thin Films Using High Density Cl2/Ar Plasma |
| 372 | Charge effects of ultrafine FET with nanodot type floating gate |
| 373 | Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping |
| 374 | Effect of Plasma Power of Plasma Enhanced Atomic Layer Deposition Process for Gate Insulator Deposition in Top-Gate Thin-Film Transistors |
| 375 | Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition |
| 376 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
| 377 | Chemical reactions during plasma-enhanced atomic layer deposition of SiO2 films employing aminosilane and O2/Ar plasma at 50°C |
| 378 | Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation |
| 379 | Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer |
| 380 | Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition |
| 381 | Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling |
| 382 | Energy transformation of plasmonic photocatalytic oxidation on 1D quantum well of platinum thin film |
| 383 | Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs |
| 384 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
| 385 | Oxygen migration in TiO2-based higher-k gate stacks |
| 386 | Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity |
| 387 | Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices |
| 388 | Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si |
| 389 | Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator |
| 390 | Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition |
| 391 | Electrical Characteristics of p-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-nm Phosphosilicate Glass |
| 392 | Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu |
