Unknown Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
2Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition
3Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
4CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories
5Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges
6Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
7Detecting structural variances of Co3O4 catalysts by controlling beam-induced sample alterations in the vacuum of a transmission electron microscope
8Surface Etching of TiO2 Thin Films Using High Density Cl2/Ar Plasma
9Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
10Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
11Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
12Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
13Simultaneous scanning tunneling microscopy and synchrotron X-ray measurements in a gas environment
14Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
15Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
16Oxygen migration in TiO2-based higher-k gate stacks
17Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
18Partitioning Electrostatic and Mechanical Domains in Nanoelectromechanical Relays
19Schottky Barrier Height Reduction at Interface Between GZO Transparent Electrode and InP/InGaAs Structure by Zinc Driven-in Step and Nickel Oxide Insertion
20Plasma-Enhanced Atomic Layer Deposition Processed Amorphous Indium Zinc Oxide Thin-Film Transistor for Ultra-High Definition Display Application
21Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
22Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
23(Invited) Characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 Capacitors
24Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
25High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
26Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications
27Transient characterization of the electroforming process in TiO2 based resistive switching devices
28Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
29Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
30Improved understanding of recombination at the Si/Al2O3 interface
31Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
32Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
33Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
34Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process
35Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
36PEALD of Copper using New Precursors for Next Generation of Interconnections
37Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
38Liquid-phase-deposited siloxane-based capping layers for silicon solar cells
39Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
40Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
41Impedance spectroscopy analysis on the effects of TiO2 interfacial atomic layers in ZnO nanorod polymer solar cells: Effects of interfacial charge extraction on diffusion and recombination
42Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
43Oxide Vertical TFTs for the Application to the Ultra High Resolution Display
44New materials for memristive switching
45Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
46Highly reflective polymeric substrates functionalized utilizing atomic layer deposition
47Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
48Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate
49Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs
50Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
51Passivation of Al2O3/TiO2 on monocrystalline Si with relatively low reflectance
52Capacitance spectroscopy of gate-defined electronic lattices
53Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
54Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
55Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
56Low-thermal budget flash light annealing for Al2O3 surface passivation
57Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer
58Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
59Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
60Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
61Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
62RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
63Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
64Theoretical Understanding of the Reaction Mechanism of SiO2 Atomic Layer Deposition
65Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of Al2O3
66Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
67High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
683D structure evolution using metastable atomic layer deposition based on planar silver templates
69Experimental verification of electro-refractive phase modulation in graphene
70600 V High-Performance AlGaN/GaN HEMTs with AlN/SiNx Passivation
71Bipolar resistive switching in amorphous titanium oxide thin film
72Fabrication and Characterization of an Extended-Gate AlGaN/GaN-Based Heterostructure Field-Effect Transistor-Type Biosensor for Detecting Immobilized Streptavidin-Biotin Protein Complexes
73Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells
74Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
75A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
76650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode
77Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
78Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
79On the equilibrium concentration of boron-oxygen defects in crystalline silicon
80Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
81Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
82Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
83All-oxide thin-film transistors with channels of mixed InOx-ZnOy formed by plasma-enhanced atomic layer deposition process
84Plasma enhanced atomic layer deposition of SiNx:H and SiO2
85Growth of ZnO nanorods on fluorine-doped tin oxide substrate without catalyst by radio-frequency magnetron sputtering
86Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
87A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
88Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
89Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
90Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
91Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
92Electrical Characteristics of Multilayer MoS2 FET's with MoS2/Graphene Heterojunction Contacts
93Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
94Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
95Epitaxial 1D electron transport layers for high-performance perovskite solar cells
96Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
97Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
98Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
99Plasma Enhanced Atomic Layer Deposition of Ru-Ta composite film as a Seed Layer for CVD Cu filling
100Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
101Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
102Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
103Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
104Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
105Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
106Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation
107Disrupted Attosecond Charge Carrier Delocalization at a Hybrid Organic/Inorganic Semiconductor Interface
108Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
109AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate
110Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
111A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
112Silicon nanowire networks for multi-stage thermoelectric modules
113Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
114Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
115PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
116Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
117Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
118Surface and sensing properties of PE-ALD SnO2 thin film
119Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
120Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor
121Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity
122Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
123Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
124An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
125Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
126Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
127Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
1283D-Branched ZnO/CdS Nanowire Arrays for Solar Water Splitting and the Service Safety Research
129New grating concepts in the NIR and SWIR spectral band for high resolution earth-observation spectrometers
130Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
131Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
132Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
133Graphene photodetectors with a bandwidth >76 GHz fabricated in a 6" wafer process line
134Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors
135Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
136Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
137Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
138Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
139Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
140Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
141Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
142Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
143Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition
144Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition
145A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
146Anisotropic Inter-Poly Dielectric technology for conventional floating gate type flash memory
147Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
148Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
149Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
150Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
151Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
152Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
153Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
154Room temperature CO2 detection using interdigitated capacitors with heteropolysiloxane sensing films
155Reliability and parasitic issues in GaN-based power HEMTs: a review
156Simultaneous Roll Transfer and Interconnection of Flexible Silicon NAND Flash Memory
157Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook
158DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures
159Effects of TiO2 Interfacial Atomic Layers on Device Performances and Exciton Dynamics in ZnO Nanorod Polymer Solar Cells
160Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
161Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition
162Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
163Junction-less nanowire based photodetector: Role of nanowire width
164Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
165Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability
166Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
167Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
168TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
169Plasma-Enhanced Atomic Layer Deposition of Zirconium Oxide Thin Films and Its Application to Solid Oxide Fuel Cells
170Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
171Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
172Formation of Ni silicide from atomic layer deposited Ni
173Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
174Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
175Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
176Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation
177Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
178Lifetimes exceeding 1ms in 1-Ohm-cm boron-doped Cz-silicon
179Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
180Al2O3/TiO2 nanolaminate gate dielectric films with enhanced electrical performances for organic field-effect transistors
181Symmetrical Al2O3-based passivation layers for p- and n-type silicon
182Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
183Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
184Anti-stiction coating for mechanically tunable photonic crystal devices
185X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect
186AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
187Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
188Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
189High performance AlGaN/GaN HEMTs with AlN/SiNx passivation
190Highly efficient and bending durable perovskite solar cells: toward a wearable power source
191Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
192Charge effects of ultrafine FET with nanodot type floating gate
193Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
194Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
195Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications
196Chemical reactions during plasma-enhanced atomic layer deposition of SiO2 films employing aminosilane and O2/Ar plasma at 50°C
197Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
198Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions
199High Performance CoOx/Si Photoanodes: Accessing Structural Disorder for Improved Catalytic Activity via Atomic Layer Deposition
200Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas
201Two-stage permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
202Forming-free metal-oxide ReRAM by oxygen ion implantation process
203Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
204Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
205Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
206Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
207DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
208Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
209Fast Flexible Plastic Substrate ZnO Circuits
210Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
211Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
212Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
213Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films
214Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
215823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
216Via sidewall insulation for through cell via contacts
217Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
218Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
219Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
220Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
221Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
222Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
223Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
224ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
225Energy transformation of plasmonic photocatalytic oxidation on 1D quantum well of platinum thin film
226TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
227Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
228Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
229Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
230Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs
231Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
232Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
233A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
234SnO2 nanotubes fabricated using electrospinning and atomic layer deposition and their gas sensing performance
235Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
236Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
237Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
238Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability
239Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
240IrO2 Nanodot Formation by Plasma Enhanced Atomic Layer Deposition as a Charge Storage Layer
241Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
242Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer
243Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
244Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
245The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
246Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
247Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
248Negative differential resistance in the I-V curves of Al2O3/AlGaN/GaN MIS structures
249Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
250Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode
251Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
252Fabrication of Si3N4-Based Artificial Basilar Membrane with ZnO Nanopillar Using MEMS Process
253AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film
254Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
255Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
256Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
257Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
258Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
259Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
260SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
261Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene
262Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
263Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
264Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
265Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
266Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
267Chemically-tunable ultrathin silsesquiazane interlayer for n-type and p-type organic transistors on flexible plastic
268Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
269Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View
270Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
271Gate Insulator for High Mobility Oxide TFT
272Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
273Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs
274Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
275Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
276Electrical Characteristics of p-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-nm Phosphosilicate Glass
277High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
278High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
279Plasma-enhanced atomic layer deposition for plasmonic TiN
280PEALD YSZ-based bilayer electrolyte for thin film-solid oxide fuel cells
281A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement
282ALD TaN Barrier for Enhanced Performance with Low Contact Resistance for 14nm Technology Node Cu Interconnects
283Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
284Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
285Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
286Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
287Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
288Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
289Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
290On the Trail Ancient Worlds: Comparative Study of Commercial Scandium and Yttrium Precursors, Asgard, Midgard, Vanaheim and Olympus
291Nitride memristors
292Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
293Non-destructive acoustic metrology and void detection in 3x50μm TSV
294Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
295Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters
296Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
297Graphene-based bimorphs for micron-sized, autonomous origami machines
298Surface oxidation model in plasma enhanced atomic layer deposition for silicon oxide films including various aminosilane precursors
299Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
300Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices
301Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
302High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
303Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
304Spectroscopy and control of near-surface defects in conductive thin film ZnO
305ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
306Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
307Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
308Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
309Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
310Effect of Plasma Power of Plasma Enhanced Atomic Layer Deposition Process for Gate Insulator Deposition in Top-Gate Thin-Film Transistors
311Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
312Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
313Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
314Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
315Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
316Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
317Study on the resistive switching time of TiO2 thin films
318Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
319Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
320Electronic Conduction Mechanisms in Insulators
321Graphene-based MMIC process development and RF passives design
322Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
323Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
324Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP)
325Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
326Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
327Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
328Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
329Dynamic threshold voltage influence on Ge pMOSFET hysteresis
330Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
331Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
332Photovoltaic Rudorffites: Lead-Free Silver Bismuth Halides Alternative to Hybrid Lead Halide Perovskites
333Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
334Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors
335Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation
336Atomic layer deposition of Pd and Pt nanoparticles for catalysis: on the mechanisms of nanoparticle formation
337Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
338High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
339Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper
340Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
341Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
342Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
343High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF4/Ar plasma
344Optimization of the Surface Structure on Black Silicon for Surface Passivation
345Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
346Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
347High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
348Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
349In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
350CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
351High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
352Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
353Mesoporous perovskite solar cells and the role of nanoscale compact layers for remarkable all-round high efficiency under both indoor and outdoor illumination
354The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
355Dynamic tuning of plasmon resonance in the visible using graphene
356Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
357Fabrication of Highly Ordered and Well-Aligned PbTiO3/TiN Core-Shell Nanotube Arrays
358Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
359Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
360Trilayer Tunnel Selectors for Memristor Memory Cells
361Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
362GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope
363Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
364Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
365Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
366Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
367Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
368Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
369Growth of silica nanowires in vacuum
370High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure
371Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
372Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material
373Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
374AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
375Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
376Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current
377Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
378Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches
379Understanding and optimizing the floating body retention in FDSOI UTBOX
380Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
381On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
382Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
383Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
384Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing
385Half-wave phase retarder working in transmission around 630nm realized by atomic layer deposition of sub-wavelength gratings
386Understanding and Eliminating Hysteresis for Highly Efficient Planar Perovskite Solar Cells
387Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes
388Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2
389Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator
390A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
391Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
392Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects