Unknown Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1(Invited) Characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 Capacitors
23D-Branched ZnO/CdS Nanowire Arrays for Solar Water Splitting and the Service Safety Research
3650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode
4823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
5A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
6A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
7A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
8A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
9A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
10A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement
11AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
12Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
13Al2O3/TiO2 nanolaminate gate dielectric films with enhanced electrical performances for organic field-effect transistors
14ALD TaN Barrier for Enhanced Performance with Low Contact Resistance for 14nm Technology Node Cu Interconnects
15ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
16AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate
17AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
18AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film
19An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
20An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
21An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon
22Anisotropic Inter-Poly Dielectric technology for conventional floating gate type flash memory
23Anti-stiction coating for mechanically tunable photonic crystal devices
24Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
25Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
26Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
27Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
28Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process
29Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
30Atomic layer deposition of Pd and Pt nanoparticles for catalysis: on the mechanisms of nanoparticle formation
31Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
32Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
33Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper
34Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
35Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
36Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
37Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
38Bipolar resistive switching in amorphous titanium oxide thin film
39Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
40Capacitance spectroscopy of gate-defined electronic lattices
41Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
42Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
43Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
44Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
45Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
46Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
47Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition
48Charge effects of ultrafine FET with nanodot type floating gate
49Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
50Chemical reactions during plasma-enhanced atomic layer deposition of SiO2 films employing aminosilane and O2/Ar plasma at 50°C
51Chemically-tunable ultrathin silsesquiazane interlayer for n-type and p-type organic transistors on flexible plastic
52CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
53Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
54Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
55Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
56Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
57Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation
58Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
59Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
60Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
61Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
62Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
63Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
64Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
65Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
66Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of Al2O3
67Detecting structural variances of Co3O4 catalysts by controlling beam-induced sample alterations in the vacuum of a transmission electron microscope
68Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
69Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
70Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges
71Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs
72DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
73DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures
74Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
75Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
76Disrupted Attosecond Charge Carrier Delocalization at a Hybrid Organic/Inorganic Semiconductor Interface
77Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
78Dynamic threshold voltage influence on Ge pMOSFET hysteresis
79Dynamic tuning of plasmon resonance in the visible using graphene
80Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
81Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
82Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
83Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films
84Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
85Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
86Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
87Effect of Plasma Power of Plasma Enhanced Atomic Layer Deposition Process for Gate Insulator Deposition in Top-Gate Thin-Film Transistors
88Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
89Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
90Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
91Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
92Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
93Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation
94Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
95Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
96Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
97Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
98Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
99Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
100Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
101Effects of TiO2 Interfacial Atomic Layers on Device Performances and Exciton Dynamics in ZnO Nanorod Polymer Solar Cells
102Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
103Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
104Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
105Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
106Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
107Electrical Characteristics of Multilayer MoS2 FET's with MoS2/Graphene Heterojunction Contacts
108Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
109Electrical Characteristics of p-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-nm Phosphosilicate Glass
110Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
111Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
112Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
113Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
114Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
115Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
116Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
117Electronic Conduction Mechanisms in Insulators
118Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches
119Energy transformation of plasmonic photocatalytic oxidation on 1D quantum well of platinum thin film
120Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition
121Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
122Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
123Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
124Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
125Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
126Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
127Enhancement of the Electrical Properties of Ga-doped ZnO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer
128Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
129Epitaxial 1D electron transport layers for high-performance perovskite solar cells
130Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
131Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
132Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
133Experimental verification of electro-refractive phase modulation in graphene
134Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View
135Fabrication and Characterization of an Extended-Gate AlGaN/GaN-Based Heterostructure Field-Effect Transistor-Type Biosensor for Detecting Immobilized Streptavidin-Biotin Protein Complexes
136Fabrication of Highly Ordered and Well-Aligned PbTiO3/TiN Core-Shell Nanotube Arrays
137Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
138Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
139Fabrication of Si3N4-Based Artificial Basilar Membrane with ZnO Nanopillar Using MEMS Process
140Fast Flexible Plastic Substrate ZnO Circuits
141Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
142Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
143Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
144Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
145Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene
146Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing
147Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability
148Formation of Ni silicide from atomic layer deposited Ni
149Forming-free metal-oxide ReRAM by oxygen ion implantation process
150Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
151Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
152GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope
153Gate Insulator for High Mobility Oxide TFT
154Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
155Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
156Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
157Graphene photodetectors with a bandwidth >76 GHz fabricated in a 6" wafer process line
158Graphene-based bimorphs for micron-sized, autonomous origami machines
159Graphene-based MMIC process development and RF passives design
160Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition
161Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
162Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
163Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
164Growth of silica nanowires in vacuum
165Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
166Growth of ZnO nanorods on fluorine-doped tin oxide substrate without catalyst by radio-frequency magnetron sputtering
167Half-wave phase retarder working in transmission around 630nm realized by atomic layer deposition of sub-wavelength gratings
168Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
169High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films
170High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
171High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
172High performance AlGaN/GaN HEMTs with AlN/SiNx passivation
173High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
174High Performance CoOx/Si Photoanodes: Accessing Structural Disorder for Improved Catalytic Activity via Atomic Layer Deposition
175High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
176High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
177High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
178High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF4/Ar plasma
179High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
180High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure
181Highly efficient and bending durable perovskite solar cells: toward a wearable power source
182Highly reflective polymeric substrates functionalized utilizing atomic layer deposition
183Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
184Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
185Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
186Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
187Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
188Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
189Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
190Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
191Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs
192Impedance spectroscopy analysis on the effects of TiO2 interfacial atomic layers in ZnO nanorod polymer solar cells: Effects of interfacial charge extraction on diffusion and recombination
193Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
194Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications
195Improved understanding of recombination at the Si/Al2O3 interface
196Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
197Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors
198Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
199Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells
200In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
201In-system photoelectron spectroscopy study of tin oxide layers produced from tetrakis(dimethylamino)tin by plasma enhanced atomic layer deposition
202Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes
203Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
204Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
205Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
206Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
207Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
208Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
209Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
210Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
211Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation
212Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
213Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
214Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
215Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
216Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
217Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
218Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation
219Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
220IrO2 Nanodot Formation by Plasma Enhanced Atomic Layer Deposition as a Charge Storage Layer
221Junction-less nanowire based photodetector: Role of nanowire width
222Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
223Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
224Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
225Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
226Lifetimes exceeding 1ms in 1-Ohm-cm boron-doped Cz-silicon
227Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
228Liquid-phase-deposited siloxane-based capping layers for silicon solar cells
229Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
230Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
231Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
232Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP)
233Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
234Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
235Low-thermal budget flash light annealing for Al2O3 surface passivation
236Mesoporous perovskite solar cells and the role of nanoscale compact layers for remarkable all-round high efficiency under both indoor and outdoor illumination
237Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
238Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
239Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
240Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
241Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
242Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
243Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
244Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
245Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
246Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
247Negative differential resistance in the I-V curves of Al2O3/AlGaN/GaN MIS structures
248New grating concepts in the NIR and SWIR spectral band for high resolution earth-observation spectrometers
249New materials for memristive switching
250Nitride memristors
251Non-destructive acoustic metrology and void detection in 3x50μm TSV
252Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
253Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
254On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
255On the equilibrium concentration of boron-oxygen defects in crystalline silicon
256Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
257Optimization of the Surface Structure on Black Silicon for Surface Passivation
258Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
259Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
260Oxide Vertical TFTs for the Application to the Ultra High Resolution Display
261Oxygen migration in TiO2-based higher-k gate stacks
262Partitioning Electrostatic and Mechanical Domains in Nanoelectromechanical Relays
263Passivation of Al2O3/TiO2 on monocrystalline Si with relatively low reflectance
264Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas
265PEALD of Copper using New Precursors for Next Generation of Interconnections
266PEALD YSZ-based bilayer electrolyte for thin film-solid oxide fuel cells
267Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer
268Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator
269Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate
270Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters
271Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
272Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
273Photovoltaic Rudorffites: Lead-Free Silver Bismuth Halides Alternative to Hybrid Lead Halide Perovskites
274Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
275Plasma enhanced atomic layer deposition of SiNx:H and SiO2
276Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
277Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
278Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
279Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
280Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
281Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
282Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material
283Plasma-enhanced atomic layer deposition for plasmonic TiN
284Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
285Plasma-Enhanced Atomic Layer Deposition Processed Amorphous Indium Zinc Oxide Thin-Film Transistor for Ultra-High Definition Display Application
286Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
287Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current
288Post Plasma Oxidation Processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge Substrates: Reliability
289Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
290Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
291Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
292Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
293Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
294Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
295Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
296Reliability and parasitic issues in GaN-based power HEMTs: a review
297Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
298Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
299Room temperature CO2 detection using interdigitated capacitors with heteropolysiloxane sensing films
300RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
301Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
302Schottky Barrier Height Reduction at Interface Between GZO Transparent Electrode and InP/InGaAs Structure by Zinc Driven-in Step and Nickel Oxide Insertion
303Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications
304Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2
305Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices
306Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs
307Silicon nanowire networks for multi-stage thermoelectric modules
308Simultaneous Roll Transfer and Interconnection of Flexible Silicon NAND Flash Memory
309Simultaneous scanning tunneling microscopy and synchrotron X-ray measurements in a gas environment
310SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
311SnO2 nanotubes fabricated using electrospinning and atomic layer deposition and their gas sensing performance
312Spectroscopy and control of near-surface defects in conductive thin film ZnO
313Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
314Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
315Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
316Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
317Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
318Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
319Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films
320Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
321Surface and sensing properties of PE-ALD SnO2 thin film
322Surface Etching of TiO2 Thin Films Using High Density Cl2/Ar Plasma
323Surface oxidation model in plasma enhanced atomic layer deposition for silicon oxide films including various aminosilane precursors
324Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
325Symmetrical Al2O3-based passivation layers for p- and n-type silicon
326Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
327Synthesis of Pt@TiO2@CNTs Hierarchical Structure Catalyst by Atomic Layer Deposition and Their Photocatalytic and Photoelectrochemical Activity
328Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
329Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
330Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
331Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
332The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
333The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
334Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions
335Theoretical Understanding of the Reaction Mechanism of SiO2 Atomic Layer Deposition
336Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
337Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
338Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
339TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
340Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
341TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
342Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
343Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
344Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
345Transient characterization of the electroforming process in TiO2 based resistive switching devices
346Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
347Trilayer Tunnel Selectors for Memristor Memory Cells
348Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
349Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
350Two-stage permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
351Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
352Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
353Understanding and Eliminating Hysteresis for Highly Efficient Planar Perovskite Solar Cells
354Understanding and optimizing the floating body retention in FDSOI UTBOX
355Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
356Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
357Via sidewall insulation for through cell via contacts
358Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
359Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
360X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect
361ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition


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