Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


Optimization of the Surface Structure on Black Silicon for Surface Passivation

Type:
Journal
Info:
Nanoscale Research Letters (2017) 12:193
Date:
2017-02-09
DOI:
http://dx.doi.org/10.1186/s11671-017-1910-6

Author Information

Name Institution
Xiaojie JiaChinese Academy of Sciences
Chunlan ZhouChinese Academy of Sciences
Wenjing WangChinese Academy of Sciences

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Substrates

Silicon

Notes

1113