Al2O3 Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing Al2O3 films returned 465 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
21D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
346-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
4A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
5A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
6A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
7A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
8A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
9A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer
10A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
11A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
12A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
13A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement
14AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
15Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
16Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
17Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers
18Advances in the fabrication of graphene transistors on flexible substrates
19Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
20Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
21Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
22Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
23Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
24Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
25Al2O3/TiO2 nanolaminate gate dielectric films with enhanced electrical performances for organic field-effect transistors
26Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
27ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
28AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
29AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
30AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
31AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
32AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
33Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
34Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
35Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
36Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films
37Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
38An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
39Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
40Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
41Anti-stiction coating for mechanically tunable photonic crystal devices
42Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
43Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
44Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
45Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
46Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films
47Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
48Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
49Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
50Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
51Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
52Atomic layer deposition of metal-oxide thin films on cellulose fibers
53Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
54Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
55Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
56Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors
57Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
58AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
59Background-Free Bottom-Up Plasmonic Arrays with Increased Sensitivity, Specificity and Shelf Life for SERS Detection Schemes
60Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
61Band alignment of Al2O3 with (-201) β-Ga2O3
62Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
63Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
64Breakdown and Protection of ALD Moisture Barrier Thin Films
65Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
66Capacitance spectroscopy of gate-defined electronic lattices
67Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
68Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
69Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
70Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
71Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
72Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
73Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
74Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
75Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
76Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
77Charge effects of ultrafine FET with nanodot type floating gate
78Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
79Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
80Chemically-tunable ultrathin silsesquiazane interlayer for n-type and p-type organic transistors on flexible plastic
81CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
82Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
83Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
84Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
85Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
86Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
87Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
88Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
89Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
90Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
91Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
92Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
93Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
94Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
95Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
96Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
97Damage evaluation in graphene underlying atomic layer deposition dielectrics
98Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
99DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
100Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
101Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
102Densification of Thin Aluminum Oxide Films by Thermal Treatments
103Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
104Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of Al2O3
105Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
106Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
107Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges
108Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs
109DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
110Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
111Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
112Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
113Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
114Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
115Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
116Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
117Dynamic threshold voltage influence on Ge pMOSFET hysteresis
118Dynamic tuning of plasmon resonance in the visible using graphene
119Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
120Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
121Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
122Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
123Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
124Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
125Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
126Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
127Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
128Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
129Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
130Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
131Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
132Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
133Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
134Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
135Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
136Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
137Electrical Characteristics of Multilayer MoS2 FET's with MoS2/Graphene Heterojunction Contacts
138Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
139Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
140Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
141Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
142Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
143Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
144Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
145Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
146Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
147Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
148Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
149Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
150Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
151Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
152Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
153Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
154Electronic Conduction Mechanisms in Insulators
155Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
156Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
157Energy-enhanced atomic layer deposition for more process and precursor versatility
158Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
159Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
160Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
161Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition
162Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
163Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
164Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
165Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
166Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
167Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements
168Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
169Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
170Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
171Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
172Experimental verification of electro-refractive phase modulation in graphene
173Fabrication and Characterization of an Extended-Gate AlGaN/GaN-Based Heterostructure Field-Effect Transistor-Type Biosensor for Detecting Immobilized Streptavidin-Biotin Protein Complexes
174Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
175Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
176Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
177Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
178Fast Flexible Plastic Substrate ZnO Circuits
179Fast PEALD ZnO Thin-Film Transistor Circuits
180Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
181Fiber-matrix interface reinforcement using Atomic Layer Deposition
182Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
183Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
184Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
185Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
186Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
187First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
188Fixed-Gap Tunnel Junction for Reading DNA Nucleotides
189Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
190Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
191Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing
192Flexible, light trapping substrates for organic photovoltaics
193Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability
194Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
195Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
196Gate Insulator for High Mobility Oxide TFT
197Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
198Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
199Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
200Graphene photodetectors with a bandwidth >76 GHz fabricated in a 6" wafer process line
201Graphene-based MMIC process development and RF passives design
202Hafnia and alumina on sulphur passivated germanium
203Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
204High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
205High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
206High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
207High-efficiency embedded transmission grating
208High-Reflective Coatings For Ground and Space Based Applications
209High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
210High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
211Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
212Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
213Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
214Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
215Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
216Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
217Impact of interface materials on side permeation in indirect encapsulation of organic electronics
218Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
219Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
220Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
221Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
222Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
223Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
224Improved understanding of recombination at the Si/Al2O3 interface
225Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
226Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
227Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells
228Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
229Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
230Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
231Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
232In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
233In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
234In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition
235In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
236In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
237Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
238Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
239Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
240Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
241Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
242Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
243Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
244Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
245Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
246Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
247Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
248Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
249Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
250Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
251Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
252Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
253Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
254Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
255Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
256Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
257Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
258Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
259Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
260Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
261Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
262Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
263Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
264Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
265Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
266Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
267Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
268Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
269Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
270Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
271Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
272Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
273Junction-less nanowire based photodetector: Role of nanowire width
274Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
275Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
276Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
277Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
278Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
279Lifetimes exceeding 1ms in 1-Ohm-cm boron-doped Cz-silicon
280Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
281Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
282Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
283Liquid-phase-deposited siloxane-based capping layers for silicon solar cells
284Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
285Lithium-Iron (III) Fluoride Battery with Double Surface Protection
286Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
287Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
288Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
289Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
290Low-Power Double-Gate ZnO TFT Active Rectifier
291Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
292Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
293Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
294Low-thermal budget flash light annealing for Al2O3 surface passivation
295Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
296MANOS performance dependence on ALD Al2O3 oxidation source
297Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
298Mechanical properties of thin-film Parylene-metal-Parylene devices
299Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
300Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
301Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
302Method of Fabrication for Encapsulated Polarizing Resonant Gratings
303Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
304Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
305Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
306Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
307Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
308Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
309Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
310MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
311Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
312N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
313Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
314Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
315Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
316Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
317Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
318Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
319Negative differential resistance in the I-V curves of Al2O3/AlGaN/GaN MIS structures
320New grating concepts in the NIR and SWIR spectral band for high resolution earth-observation spectrometers
321Nitride passivation of the interface between high-k dielectrics and SiGe
322Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
323Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
324Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
325Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
326On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
327On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
328On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
329On the equilibrium concentration of boron-oxygen defects in crystalline silicon
330On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
331On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
332Optical display film as flexible and light trapping substrate for organic photovoltaics
333Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
334Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
335Optimization of the Surface Structure on Black Silicon for Surface Passivation
336Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
337Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
338Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
339Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
340Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
341Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
342Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
343Passivation effects of atomic-layer-deposited aluminum oxide
344Passivation of Al2O3/TiO2 on monocrystalline Si with relatively low reflectance
345Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
346Patterned deposition by plasma enhanced spatial atomic layer deposition
347PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
348Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
349Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator
350Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
351Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters
352Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
353Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
354Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
355Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
356Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
357Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
358Plasma Enhanced Atomic Layer Deposition on Powders
359Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
360Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
361Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
362Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
363Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
364Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
365Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
366Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
367Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
368Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
369Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
370Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
371Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
372Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
373Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
374Propagation Effects in Carbon Nanoelectronics
375Protective capping and surface passivation of III-V nanowires by atomic layer deposition
376Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
377Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
378Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
379Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
380Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
381Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
382Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
383Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
384Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
385Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
386Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
387RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
388Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition
389Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
390Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications
391Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
392Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
393Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
394Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
395Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
396Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
397Simultaneous Roll Transfer and Interconnection of Flexible Silicon NAND Flash Memory
398SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
399Single-Cell Photonic Nanocavity Probes
400Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
401Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
402Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
403Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
404Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
405Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
406Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
407Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
408Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
409Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
410Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
411Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
412Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
413Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
414Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
415Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
416Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
417Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
418Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
419Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
420Symmetrical Al2O3-based passivation layers for p- and n-type silicon
421Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
422Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
423Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
424The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
425The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
426The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
427Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions
428Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
429Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
430Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
431Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
432TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
433Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
434Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects
435Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
436Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
437Trapped charge densities in Al2O3-based silicon surface passivation layers
438Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
439Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
440Tribological properties of thin films made by atomic layer deposition sliding against silicon
441Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
442Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
443Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
444Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
445Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
446Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
447Two-stage permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
448Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
449Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
450Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
451Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
452Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
453Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
454Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
455Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
456Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode
457Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
458Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
459Very high frequency plasma reactant for atomic layer deposition
460Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
461Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
462Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition