Al2O3 Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing Al2O3 films returned 403 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
21D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
346-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
4A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
5A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
6A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
7A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
8A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
9A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
10A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
11A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement
12AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
13Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
14Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
15Advances in the fabrication of graphene transistors on flexible substrates
16Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
17Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
18Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
19Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
20Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
21Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
22Al2O3/TiO2 nanolaminate gate dielectric films with enhanced electrical performances for organic field-effect transistors
23Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
24ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
25AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
26AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
27AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
28AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
29AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
30Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
31Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
32Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
33An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
34Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
35Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
36Anti-stiction coating for mechanically tunable photonic crystal devices
37Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
38Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
39Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
40Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
41Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
42Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
43Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
44Atomic layer deposition of metal-oxide thin films on cellulose fibers
45Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
46Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
47Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors
48AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
49Background-Free Bottom-Up Plasmonic Arrays with Increased Sensitivity, Specificity and Shelf Life for SERS Detection Schemes
50Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
51Band alignment of Al2O3 with (-201) β-Ga2O3
52Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
53Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
54Breakdown and Protection of ALD Moisture Barrier Thin Films
55Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
56Capacitance spectroscopy of gate-defined electronic lattices
57Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
58Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
59Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
60Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
61Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
62Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
63Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
64Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
65Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
66Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
67Charge effects of ultrafine FET with nanodot type floating gate
68Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
69Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
70Chemically-tunable ultrathin silsesquiazane interlayer for n-type and p-type organic transistors on flexible plastic
71CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
72Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
73Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
74Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
75Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
76Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
77Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
78Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
79Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
80Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
81Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
82Damage evaluation in graphene underlying atomic layer deposition dielectrics
83Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
84DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
85Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
86Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
87Demonstration of flexible thin film transistors with GaN channels
88Densification of Thin Aluminum Oxide Films by Thermal Treatments
89Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
90Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of Al2O3
91Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
92Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
93Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges
94Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs
95DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
96Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
97Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
98Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
99Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
100Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
101Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
102Dynamic threshold voltage influence on Ge pMOSFET hysteresis
103Dynamic tuning of plasmon resonance in the visible using graphene
104Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
105Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
106Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
107Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
108Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
109Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
110Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
111Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
112Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
113Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
114Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
115Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
116Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
117Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
118Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
119Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
120Electrical Characteristics of Multilayer MoS2 FET's with MoS2/Graphene Heterojunction Contacts
121Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
122Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
123Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
124Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
125Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
126Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
127Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
128Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
129Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
130Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
131Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
132Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
133Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
134Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
135Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
136Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
137Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
138Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
139Energy-enhanced atomic layer deposition for more process and precursor versatility
140Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
141Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
142Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
143Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
144Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
145Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
146Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
147Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
148Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
149Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
150Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
151Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
152Experimental verification of electro-refractive phase modulation in graphene
153Fabrication and Characterization of an Extended-Gate AlGaN/GaN-Based Heterostructure Field-Effect Transistor-Type Biosensor for Detecting Immobilized Streptavidin-Biotin Protein Complexes
154Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
155Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
156Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
157Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
158Fast Flexible Plastic Substrate ZnO Circuits
159Fast PEALD ZnO Thin-Film Transistor Circuits
160Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
161Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
162Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
163Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
164Fixed-Gap Tunnel Junction for Reading DNA Nucleotides
165Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
166Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing
167Flexible, light trapping substrates for organic photovoltaics
168Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability
169Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
170Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
171Gate Insulator for High Mobility Oxide TFT
172Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
173Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
174Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
175Graphene photodetectors with a bandwidth >76 GHz fabricated in a 6" wafer process line
176Graphene-based MMIC process development and RF passives design
177Hafnia and alumina on sulphur passivated germanium
178Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
179High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
180High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
181High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
182High-efficiency embedded transmission grating
183High-Reflective Coatings For Ground and Space Based Applications
184High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
185Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
186Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
187Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
188Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
189Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
190Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
191Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
192Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
193Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
194Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
195Improved understanding of recombination at the Si/Al2O3 interface
196Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
197Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
198Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells
199Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
200Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
201Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
202Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
203In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
204In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
205In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
206In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
207Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
208Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
209Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
210Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
211Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
212Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
213Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
214Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
215Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
216Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
217Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
218Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
219Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
220Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
221Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
222Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
223Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
224Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
225Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
226Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
227Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
228Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
229Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
230Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
231Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
232Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
233Junction-less nanowire based photodetector: Role of nanowire width
234Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
235Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
236Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
237Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
238Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
239Lifetimes exceeding 1ms in 1-Ohm-cm boron-doped Cz-silicon
240Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
241Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
242Liquid-phase-deposited siloxane-based capping layers for silicon solar cells
243Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
244Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
245Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
246Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
247Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
248Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
249Low-Power Double-Gate ZnO TFT Active Rectifier
250Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
251Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
252Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
253Low-thermal budget flash light annealing for Al2O3 surface passivation
254Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
255MANOS performance dependence on ALD Al2O3 oxidation source
256Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
257Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
258Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
259Method of Fabrication for Encapsulated Polarizing Resonant Gratings
260Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
261Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
262Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
263Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
264Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
265Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
266Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
267N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
268Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
269Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
270Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
271Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
272Negative differential resistance in the I-V curves of Al2O3/AlGaN/GaN MIS structures
273New grating concepts in the NIR and SWIR spectral band for high resolution earth-observation spectrometers
274Nitride passivation of the interface between high-k dielectrics and SiGe
275Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
276Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
277Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
278Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
279On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
280On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
281On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
282On the equilibrium concentration of boron-oxygen defects in crystalline silicon
283On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
284Optical display film as flexible and light trapping substrate for organic photovoltaics
285Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
286Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
287Optimization of the Surface Structure on Black Silicon for Surface Passivation
288Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
289Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
290Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
291Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
292Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
293Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
294Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
295Passivation effects of atomic-layer-deposited aluminum oxide
296Passivation of Al2O3/TiO2 on monocrystalline Si with relatively low reflectance
297Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
298Patterned deposition by plasma enhanced spatial atomic layer deposition
299PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
300Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
301Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator
302Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
303Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters
304Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
305Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
306Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
307Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
308Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
309Plasma Enhanced Atomic Layer Deposition on Powders
310Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
311Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
312Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
313Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
314Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
315Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
316Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
317Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
318Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
319Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
320Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
321Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
322Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
323Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
324Propagation Effects in Carbon Nanoelectronics
325Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
326Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
327Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
328Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
329Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
330Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
331Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
332Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
333Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
334Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
335RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
336Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications
337Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
338Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
339Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
340Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
341Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
342Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
343Simultaneous Roll Transfer and Interconnection of Flexible Silicon NAND Flash Memory
344SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
345Single-Cell Photonic Nanocavity Probes
346Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
347Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
348Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
349Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
350Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
351Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
352Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
353Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
354Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
355Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
356Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
357Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
358Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
359Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
360Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
361Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
362Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
363Symmetrical Al2O3-based passivation layers for p- and n-type silicon
364Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
365Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
366Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
367The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
368The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
369The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
370Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions
371Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
372Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
373Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
374Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
375TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
376Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
377Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects
378Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
379Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
380Trapped charge densities in Al2O3-based silicon surface passivation layers
381Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
382Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
383Tribological properties of thin films made by atomic layer deposition sliding against silicon
384Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
385Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
386Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
387Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
388Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
389Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
390Two-stage permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
391Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
392Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
393Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
394Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
395Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
396Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
397Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
398Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode
399Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
400Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
401Very high frequency plasma reactant for atomic layer deposition
402Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
403Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition


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