Al2O3 Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing Al2O3 films returned 470 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
21D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
346-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
4A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
5A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
6A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
7A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
8A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
9A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer
10A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
11A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
12A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
13A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement
14AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
15Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
16Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
17Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers
18Advances in the fabrication of graphene transistors on flexible substrates
19Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
20Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
21Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
22Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
23Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
24Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
25Al2O3/TiO2 nanolaminate gate dielectric films with enhanced electrical performances for organic field-effect transistors
26Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
27ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
28AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
29AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
30AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
31AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
32AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
33Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
34Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
35Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
36Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films
37Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
38An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
39Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
40Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
41Anti-stiction coating for mechanically tunable photonic crystal devices
42Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
43Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
44Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
45Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
46Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films
47Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
48Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
49Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
50Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
51Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
52Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
53Atomic layer deposition of metal-oxide thin films on cellulose fibers
54Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
55Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
56Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
57Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors
58Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
59Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
60AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
61Background-Free Bottom-Up Plasmonic Arrays with Increased Sensitivity, Specificity and Shelf Life for SERS Detection Schemes
62Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
63Band alignment of Al2O3 with (-201) β-Ga2O3
64Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
65Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
66Breakdown and Protection of ALD Moisture Barrier Thin Films
67Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
68Capacitance spectroscopy of gate-defined electronic lattices
69Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
70Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
71Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
72Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
73Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
74Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
75Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
76Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
77Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
78Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
79Charge effects of ultrafine FET with nanodot type floating gate
80Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
81Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
82Chemically-tunable ultrathin silsesquiazane interlayer for n-type and p-type organic transistors on flexible plastic
83CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
84Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
85Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
86Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
87Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
88Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
89Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
90Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
91Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
92Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
93Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
94Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
95Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
96Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
97Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
98Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
99Damage evaluation in graphene underlying atomic layer deposition dielectrics
100Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
101DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
102Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
103Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
104Densification of Thin Aluminum Oxide Films by Thermal Treatments
105Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
106Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of Al2O3
107Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
108Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
109Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges
110Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs
111DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
112Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
113Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
114Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
115Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
116Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
117Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
118Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
119Dynamic threshold voltage influence on Ge pMOSFET hysteresis
120Dynamic tuning of plasmon resonance in the visible using graphene
121Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
122Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
123Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
124Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
125Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
126Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
127Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
128Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
129Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
130Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
131Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
132Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
133Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
134Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
135Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
136Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
137Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
138Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
139Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
140Electrical Characteristics of Multilayer MoS2 FET's with MoS2/Graphene Heterojunction Contacts
141Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
142Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
143Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
144Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
145Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
146Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
147Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
148Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
149Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
150Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
151Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
152Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
153Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
154Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
155Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
156Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
157Electronic Conduction Mechanisms in Insulators
158Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
159Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
160Energy-enhanced atomic layer deposition for more process and precursor versatility
161Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
162Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
163Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
164Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition
165Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
166Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
167Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
168Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
169Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
170Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements
171Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
172Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
173Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
174Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
175Experimental verification of electro-refractive phase modulation in graphene
176Fabrication and Characterization of an Extended-Gate AlGaN/GaN-Based Heterostructure Field-Effect Transistor-Type Biosensor for Detecting Immobilized Streptavidin-Biotin Protein Complexes
177Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
178Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
179Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
180Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
181Fast Flexible Plastic Substrate ZnO Circuits
182Fast PEALD ZnO Thin-Film Transistor Circuits
183Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
184Fiber-matrix interface reinforcement using Atomic Layer Deposition
185Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
186Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
187Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
188Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
189Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
190First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
191Fixed-Gap Tunnel Junction for Reading DNA Nucleotides
192Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
193Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
194Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing
195Flexible, light trapping substrates for organic photovoltaics
196Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability
197Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
198Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
199Gate Insulator for High Mobility Oxide TFT
200Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
201Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
202Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
203Graphene photodetectors with a bandwidth >76 GHz fabricated in a 6" wafer process line
204Graphene-based MMIC process development and RF passives design
205Hafnia and alumina on sulphur passivated germanium
206Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
207High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
208High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
209High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
210High-efficiency embedded transmission grating
211High-Reflective Coatings For Ground and Space Based Applications
212High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
213High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
214Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
215Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
216Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
217Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
218Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
219Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
220Impact of interface materials on side permeation in indirect encapsulation of organic electronics
221Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
222Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
223Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
224Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
225Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
226Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
227Improved understanding of recombination at the Si/Al2O3 interface
228Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
229Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
230Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells
231Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
232Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
233Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
234Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
235In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
236In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
237In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition
238In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
239In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
240Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
241Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
242Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
243Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
244Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
245Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
246Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
247Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
248Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
249Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
250Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
251Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
252Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
253Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
254Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
255Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
256Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
257Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
258Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
259Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
260Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
261Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
262Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
263Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
264Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
265Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
266Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
267Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
268Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
269Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
270Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
271Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
272Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
273Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
274Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
275Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
276Junction-less nanowire based photodetector: Role of nanowire width
277Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
278Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
279Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
280Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
281Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
282Lifetimes exceeding 1ms in 1-Ohm-cm boron-doped Cz-silicon
283Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
284Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
285Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
286Liquid-phase-deposited siloxane-based capping layers for silicon solar cells
287Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
288Lithium-Iron (III) Fluoride Battery with Double Surface Protection
289Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
290Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
291Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
292Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
293Low-Power Double-Gate ZnO TFT Active Rectifier
294Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
295Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
296Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
297Low-thermal budget flash light annealing for Al2O3 surface passivation
298Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
299MANOS performance dependence on ALD Al2O3 oxidation source
300Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
301Mechanical properties of thin-film Parylene-metal-Parylene devices
302Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
303Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
304Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
305Method of Fabrication for Encapsulated Polarizing Resonant Gratings
306Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
307Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
308Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
309Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
310Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
311Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
312Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
313MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
314Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
315N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
316Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
317Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
318Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
319Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
320Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
321Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
322Negative differential resistance in the I-V curves of Al2O3/AlGaN/GaN MIS structures
323New grating concepts in the NIR and SWIR spectral band for high resolution earth-observation spectrometers
324Nitride passivation of the interface between high-k dielectrics and SiGe
325Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
326Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
327Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
328Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
329On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
330On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
331On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
332On the equilibrium concentration of boron-oxygen defects in crystalline silicon
333On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
334On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
335Optical display film as flexible and light trapping substrate for organic photovoltaics
336Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
337Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
338Optimization of the Surface Structure on Black Silicon for Surface Passivation
339Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
340Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
341Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
342Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
343Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
344Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
345Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
346Passivation effects of atomic-layer-deposited aluminum oxide
347Passivation of Al2O3/TiO2 on monocrystalline Si with relatively low reflectance
348Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
349Patterned deposition by plasma enhanced spatial atomic layer deposition
350PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
351Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
352Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator
353Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
354Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters
355Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
356Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
357Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
358Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
359Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
360Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
361Plasma Enhanced Atomic Layer Deposition on Powders
362Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
363Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
364Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
365Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
366Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
367Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
368Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
369Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
370Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
371Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
372Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
373Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
374Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
375Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
376Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
377Propagation Effects in Carbon Nanoelectronics
378Protective capping and surface passivation of III-V nanowires by atomic layer deposition
379Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
380Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
381Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
382Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
383Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
384Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
385Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
386Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
387Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
388Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
389Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
390RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
391Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition
392Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
393Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications
394Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
395Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
396Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
397Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
398Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
399Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
400Simultaneous Roll Transfer and Interconnection of Flexible Silicon NAND Flash Memory
401SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
402Single-Cell Photonic Nanocavity Probes
403Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
404Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
405Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
406Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
407Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
408Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
409Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
410Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
411Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
412Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
413Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources
414Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
415Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
416Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
417Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
418Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
419Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
420Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
421Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
422Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
423Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
424Symmetrical Al2O3-based passivation layers for p- and n-type silicon
425Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
426Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
427Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
428The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
429The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
430The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
431Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions
432Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
433Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
434Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition
435Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
436Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
437TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
438Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
439Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects
440Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
441Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
442Trapped charge densities in Al2O3-based silicon surface passivation layers
443Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
444Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
445Tribological properties of thin films made by atomic layer deposition sliding against silicon
446Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
447Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
448Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
449Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
450Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
451Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
452Two-stage permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
453Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
454Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
455Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
456Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
457Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
458Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
459Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
460Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
461Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode
462Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
463Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
464Very high frequency plasma reactant for atomic layer deposition
465Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
466Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
467Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition