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Al2O3 Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing Al2O3 films returned 380 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
21D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
346-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
4A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
5A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
6A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
7A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
8A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
9A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
10A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement
11AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
12Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
13Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
14Advances in the fabrication of graphene transistors on flexible substrates
15Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
16Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
17Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
18Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
19Al2O3/TiO2 nanolaminate gate dielectric films with enhanced electrical performances for organic field-effect transistors
20Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
21ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
22AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
23AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
24AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
25AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
26AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
27Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
28Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
29Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
30An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
31Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
32Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
33Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
34Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
35Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
36Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
37Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
38Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
39Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
40Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
41Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
42Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors
43AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
44Background-Free Bottom-Up Plasmonic Arrays with Increased Sensitivity, Specificity and Shelf Life for SERS Detection Schemes
45Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
46Band alignment of Al2O3 with (-201) β-Ga2O3
47Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
48Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
49Breakdown and Protection of ALD Moisture Barrier Thin Films
50Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
51Capacitance spectroscopy of gate-defined electronic lattices
52Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
53Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
54Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
55Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
56Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
57Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
58Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
59Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
60Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
61Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
62Charge effects of ultrafine FET with nanodot type floating gate
63Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
64Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
65Chemically-tunable ultrathin silsesquiazane interlayer for n-type and p-type organic transistors on flexible plastic
66CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
67Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
68Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
69Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
70Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
71Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
72Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
73Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
74Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
75Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
76Damage evaluation in graphene underlying atomic layer deposition dielectrics
77Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
78DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
79Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
80Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
81Demonstration of flexible thin film transistors with GaN channels
82Densification of Thin Aluminum Oxide Films by Thermal Treatments
83Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
84Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of Al2O3
85Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
86Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
87Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges
88Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs
89DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
90Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
91Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
92Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
93Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
94Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
95Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
96Dynamic threshold voltage influence on Ge pMOSFET hysteresis
97Dynamic tuning of plasmon resonance in the visible using graphene
98Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
99Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
100Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
101Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
102Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
103Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
104Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
105Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
106Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
107Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
108Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
109Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
110Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
111Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
112Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
113Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
114Electrical Characteristics of Multilayer MoS2 FET's with MoS2/Graphene Heterojunction Contacts
115Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
116Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
117Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
118Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
119Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
120Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
121Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
122Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
123Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
124Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
125Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
126Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
127Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
128Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
129Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
130Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
131Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
132Energy-enhanced atomic layer deposition for more process and precursor versatility
133Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
134Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
135Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
136Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
137Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
138Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
139Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
140Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
141Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
142Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
143Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
144Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
145Experimental verification of electro-refractive phase modulation in graphene
146Fabrication and Characterization of an Extended-Gate AlGaN/GaN-Based Heterostructure Field-Effect Transistor-Type Biosensor for Detecting Immobilized Streptavidin-Biotin Protein Complexes
147Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
148Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
149Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
150Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
151Fast Flexible Plastic Substrate ZnO Circuits
152Fast PEALD ZnO Thin-Film Transistor Circuits
153Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
154Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
155Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
156Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
157Fixed-Gap Tunnel Junction for Reading DNA Nucleotides
158Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
159Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing
160Flexible, light trapping substrates for organic photovoltaics
161Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability
162Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
163Gate Insulator for High Mobility Oxide TFT
164Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
165Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
166Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
167Graphene photodetectors with a bandwidth >76 GHz fabricated in a 6" wafer process line
168Graphene-based MMIC process development and RF passives design
169Hafnia and alumina on sulphur passivated germanium
170Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
171High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
172High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
173High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
174High-efficiency embedded transmission grating
175High-Reflective Coatings For Ground and Space Based Applications
176High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
177Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
178Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
179Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
180Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
181Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
182Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
183Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
184Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
185Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
186Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
187Improved understanding of recombination at the Si/Al2O3 interface
188Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
189Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
190Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells
191Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
192Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
193Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
194In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
195In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
196In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
197Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
198Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
199Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
200Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
201Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
202Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
203Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
204Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
205Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
206Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
207Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
208Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
209Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
210Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
211Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
212Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
213Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
214Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
215Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
216Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
217Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
218Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
219Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
220Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
221Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
222Junction-less nanowire based photodetector: Role of nanowire width
223Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
224Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
225Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
226Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
227Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
228Lifetimes exceeding 1ms in 1-Ohm-cm boron-doped Cz-silicon
229Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
230Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
231Liquid-phase-deposited siloxane-based capping layers for silicon solar cells
232Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
233Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
234Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
235Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
236Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
237Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
238Low-Power Double-Gate ZnO TFT Active Rectifier
239Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
240Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
241Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
242Low-thermal budget flash light annealing for Al2O3 surface passivation
243Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
244MANOS performance dependence on ALD Al2O3 oxidation source
245Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
246Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
247Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
248Method of Fabrication for Encapsulated Polarizing Resonant Gratings
249Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
250Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
251Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
252Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
253Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
254Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
255Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
256N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
257Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
258Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
259Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
260Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
261Negative differential resistance in the I-V curves of Al2O3/AlGaN/GaN MIS structures
262New grating concepts in the NIR and SWIR spectral band for high resolution earth-observation spectrometers
263Nitride passivation of the interface between high-k dielectrics and SiGe
264Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
265Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
266Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
267On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
268On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
269On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
270On the equilibrium concentration of boron-oxygen defects in crystalline silicon
271On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
272Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
273Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
274Optimization of the Surface Structure on Black Silicon for Surface Passivation
275Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
276Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
277Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
278Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
279Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
280Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
281Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
282Passivation effects of atomic-layer-deposited aluminum oxide
283Passivation of Al2O3/TiO2 on monocrystalline Si with relatively low reflectance
284Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
285Patterned deposition by plasma enhanced spatial atomic layer deposition
286PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
287Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
288Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator
289Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
290Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters
291Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
292Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
293Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
294Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
295Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
296Plasma Enhanced Atomic Layer Deposition on Powders
297Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
298Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
299Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
300Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
301Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
302Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
303Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
304Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
305Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
306Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
307Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
308Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
309Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
310Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
311Propagation Effects in Carbon Nanoelectronics
312Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
313Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
314Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
315Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
316Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
317Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
318Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
319Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
320Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
321Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
322RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
323Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
324Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
325Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
326Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
327Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
328Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
329Simultaneous Roll Transfer and Interconnection of Flexible Silicon NAND Flash Memory
330SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
331Single-Cell Photonic Nanocavity Probes
332Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
333Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
334Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
335Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
336Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
337Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
338Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
339Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
340Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
341Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
342Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
343Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
344Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
345Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
346Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
347Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
348Symmetrical Al2O3-based passivation layers for p- and n-type silicon
349Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
350Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
351Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
352The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
353The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
354The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
355Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions
356Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
357Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
358Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
359TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
360Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
361Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
362Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
363Trapped charge densities in Al2O3-based silicon surface passivation layers
364Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
365Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
366Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
367Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
368Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
369Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
370Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
371Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
372Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
373Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
374Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
375Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode
376Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
377Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
378Very high frequency plasma reactant for atomic layer deposition
379Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
380Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition

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