Al2O3 Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing Al2O3 films returned 413 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
21D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
346-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
4A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
5A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
6A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
7A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
8A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
9A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
10A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
11A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement
12AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
13Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
14Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
15Advances in the fabrication of graphene transistors on flexible substrates
16Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
17Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
18Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
19Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
20Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
21Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
22Al2O3/TiO2 nanolaminate gate dielectric films with enhanced electrical performances for organic field-effect transistors
23Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
24ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
25AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
26AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
27AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
28AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
29AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
30Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
31Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
32Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
33An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
34Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
35Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
36Anti-stiction coating for mechanically tunable photonic crystal devices
37Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
38Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
39Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
40Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
41Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
42Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
43Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
44Atomic layer deposition of metal-oxide thin films on cellulose fibers
45Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
46Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
47Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors
48AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
49Background-Free Bottom-Up Plasmonic Arrays with Increased Sensitivity, Specificity and Shelf Life for SERS Detection Schemes
50Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
51Band alignment of Al2O3 with (-201) β-Ga2O3
52Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
53Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
54Breakdown and Protection of ALD Moisture Barrier Thin Films
55Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
56Capacitance spectroscopy of gate-defined electronic lattices
57Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
58Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
59Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
60Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
61Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
62Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
63Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
64Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
65Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
66Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
67Charge effects of ultrafine FET with nanodot type floating gate
68Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
69Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
70Chemically-tunable ultrathin silsesquiazane interlayer for n-type and p-type organic transistors on flexible plastic
71CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
72Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
73Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
74Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
75Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
76Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
77Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
78Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
79Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
80Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
81Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
82Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
83Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
84Damage evaluation in graphene underlying atomic layer deposition dielectrics
85Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
86DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
87Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
88Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
89Demonstration of flexible thin film transistors with GaN channels
90Densification of Thin Aluminum Oxide Films by Thermal Treatments
91Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
92Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of Al2O3
93Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
94Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
95Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges
96Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs
97DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
98Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
99Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
100Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
101Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
102Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
103Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
104Dynamic threshold voltage influence on Ge pMOSFET hysteresis
105Dynamic tuning of plasmon resonance in the visible using graphene
106Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
107Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
108Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
109Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
110Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
111Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
112Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
113Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
114Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
115Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
116Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
117Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
118Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
119Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
120Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
121Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
122Electrical Characteristics of Multilayer MoS2 FET's with MoS2/Graphene Heterojunction Contacts
123Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
124Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
125Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
126Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
127Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
128Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
129Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
130Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
131Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
132Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
133Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
134Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
135Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
136Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
137Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
138Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
139Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
140Electronic Conduction Mechanisms in Insulators
141Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
142Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
143Energy-enhanced atomic layer deposition for more process and precursor versatility
144Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
145Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
146Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
147Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
148Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
149Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
150Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
151Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
152Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
153Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
154Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
155Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
156Experimental verification of electro-refractive phase modulation in graphene
157Fabrication and Characterization of an Extended-Gate AlGaN/GaN-Based Heterostructure Field-Effect Transistor-Type Biosensor for Detecting Immobilized Streptavidin-Biotin Protein Complexes
158Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
159Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
160Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
161Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
162Fast Flexible Plastic Substrate ZnO Circuits
163Fast PEALD ZnO Thin-Film Transistor Circuits
164Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
165Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
166Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
167Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
168Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
169First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
170Fixed-Gap Tunnel Junction for Reading DNA Nucleotides
171Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
172Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing
173Flexible, light trapping substrates for organic photovoltaics
174Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability
175Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
176Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
177Gate Insulator for High Mobility Oxide TFT
178Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
179Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
180Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
181Graphene photodetectors with a bandwidth >76 GHz fabricated in a 6" wafer process line
182Graphene-based MMIC process development and RF passives design
183Hafnia and alumina on sulphur passivated germanium
184Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
185High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
186High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
187High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
188High-efficiency embedded transmission grating
189High-Reflective Coatings For Ground and Space Based Applications
190High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
191High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
192Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
193Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
194Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
195Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
196Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
197Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
198Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
199Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
200Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
201Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
202Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
203Improved understanding of recombination at the Si/Al2O3 interface
204Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
205Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
206Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells
207Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
208Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
209Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
210Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
211In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
212In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
213In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
214In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
215Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
216Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
217Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
218Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
219Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
220Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
221Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
222Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
223Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
224Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN
225Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
226Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
227Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
228Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
229Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
230Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
231Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
232Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
233Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
234Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
235Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
236Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
237Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
238Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
239Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
240Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
241Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
242Junction-less nanowire based photodetector: Role of nanowire width
243Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
244Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
245Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
246Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
247Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
248Lifetimes exceeding 1ms in 1-Ohm-cm boron-doped Cz-silicon
249Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
250Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
251Liquid-phase-deposited siloxane-based capping layers for silicon solar cells
252Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
253Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
254Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
255Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
256Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
257Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
258Low-Power Double-Gate ZnO TFT Active Rectifier
259Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
260Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
261Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
262Low-thermal budget flash light annealing for Al2O3 surface passivation
263Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
264MANOS performance dependence on ALD Al2O3 oxidation source
265Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
266Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
267Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
268Method of Fabrication for Encapsulated Polarizing Resonant Gratings
269Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
270Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
271Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
272Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
273Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
274Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
275Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
276Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
277N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
278Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
279Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
280Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
281Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
282Negative differential resistance in the I-V curves of Al2O3/AlGaN/GaN MIS structures
283New grating concepts in the NIR and SWIR spectral band for high resolution earth-observation spectrometers
284Nitride passivation of the interface between high-k dielectrics and SiGe
285Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
286Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
287Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
288Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
289On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
290On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
291On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
292On the equilibrium concentration of boron-oxygen defects in crystalline silicon
293On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
294Optical display film as flexible and light trapping substrate for organic photovoltaics
295Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
296Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
297Optimization of the Surface Structure on Black Silicon for Surface Passivation
298Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
299Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
300Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
301Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
302Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
303Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
304Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
305Passivation effects of atomic-layer-deposited aluminum oxide
306Passivation of Al2O3/TiO2 on monocrystalline Si with relatively low reflectance
307Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
308Patterned deposition by plasma enhanced spatial atomic layer deposition
309PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
310Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
311Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator
312Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
313Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters
314Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
315Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
316Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
317Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
318Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
319Plasma Enhanced Atomic Layer Deposition on Powders
320Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
321Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
322Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
323Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
324Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
325Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
326Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
327Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
328Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
329Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
330Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
331Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
332Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
333Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
334Propagation Effects in Carbon Nanoelectronics
335Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
336Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
337Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
338Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
339Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
340Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
341Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
342Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
343Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
344Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
345RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
346Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications
347Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
348Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
349Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
350Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
351Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
352Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
353Simultaneous Roll Transfer and Interconnection of Flexible Silicon NAND Flash Memory
354SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
355Single-Cell Photonic Nanocavity Probes
356Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
357Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
358Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
359Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
360Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
361Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
362Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
363Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
364Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
365Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
366Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
367Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
368Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
369Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
370Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
371Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
372Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
373Symmetrical Al2O3-based passivation layers for p- and n-type silicon
374Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
375Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
376Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
377The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
378The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
379The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
380Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions
381Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
382Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
383Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
384Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
385TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
386Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
387Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects
388Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
389Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
390Trapped charge densities in Al2O3-based silicon surface passivation layers
391Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
392Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
393Tribological properties of thin films made by atomic layer deposition sliding against silicon
394Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
395Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
396Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
397Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
398Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
399Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
400Two-stage permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
401Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
402Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
403Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
404Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
405Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
406Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
407Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
408Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode
409Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
410Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
411Very high frequency plasma reactant for atomic layer deposition
412Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
413Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition


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