| 1 | Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C |
| 2 | Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3 |
| 3 | Fixed-Gap Tunnel Junction for Reading DNA Nucleotides |
| 4 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
| 5 | Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors |
| 6 | Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device |
| 7 | Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition |
| 8 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
| 9 | Low-Power Double-Gate ZnO TFT Active Rectifier |
| 10 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
| 11 | Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors |
| 12 | Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells |
| 13 | Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer |
| 14 | Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches |
| 15 | Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition |
| 16 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
| 17 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
| 18 | Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices |
| 19 | Atomic layer deposition of metal-oxide thin films on cellulose fibers |
| 20 | Electrical Characteristics of Multilayer MoS2 FET's with MoS2/Graphene Heterojunction Contacts |
| 21 | Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor |
| 22 | AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD |
| 23 | Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C |
| 24 | Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity |
| 25 | 46-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor |
| 26 | Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3 |
| 27 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
| 28 | Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene |
| 29 | Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing |
| 30 | CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm |
| 31 | High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits |
| 32 | Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries |
| 33 | Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer |
| 34 | On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR |
| 35 | A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD |
| 36 | Dynamic tuning of plasmon resonance in the visible using graphene |
| 37 | Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures |
| 38 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
| 39 | Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics |
| 40 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
| 41 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
| 42 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
| 43 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
| 44 | AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs |
| 45 | Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition |
| 46 | A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement |
| 47 | Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator |
| 48 | Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells |
| 49 | Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors |
| 50 | Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers |
| 51 | High-Reflective Coatings For Ground and Space Based Applications |
| 52 | Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors |
| 53 | Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium |
| 54 | Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors |
| 55 | Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability |
| 56 | Fast Flexible Plastic Substrate ZnO Circuits |
| 57 | Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries |
| 58 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
| 59 | Oxide semiconductor thin film transistors on thin solution-cast flexible substrates |
| 60 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
| 61 | Band alignment of Al2O3 with (-201) β-Ga2O3 |
| 62 | Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces |
| 63 | Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor |
| 64 | MANOS performance dependence on ALD Al2O3 oxidation source |
| 65 | Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure |
| 66 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
| 67 | Background-Free Bottom-Up Plasmonic Arrays with Increased Sensitivity, Specificity and Shelf Life for SERS Detection Schemes |
| 68 | Mechanical properties of thin-film Parylene-metal-Parylene devices |
| 69 | The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology |
| 70 | Passivation of Al2O3/TiO2 on monocrystalline Si with relatively low reflectance |
| 71 | Toward plasma enhanced atomic layer deposition of oxides on graphene: Understanding plasma effects |
| 72 | Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition |
| 73 | Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources |
| 74 | High-efficiency embedded transmission grating |
| 75 | Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating |
| 76 | Optimization of the Surface Structure on Black Silicon for Surface Passivation |
| 77 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
| 78 | AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD |
| 79 | Plasma Enhanced Atomic Layer Deposition on Powders |
| 80 | Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing |
| 81 | Passivation effects of atomic-layer-deposited aluminum oxide |
| 82 | Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon |
| 83 | Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors |
| 84 | Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density |
| 85 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
| 86 | Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs |
| 87 | Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition |
| 88 | Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices |
| 89 | Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization |
| 90 | Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system |
| 91 | Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation |
| 92 | Comparison of passivation layers for AlGaN/GaN high electron mobility transistors |
| 93 | RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor |
| 94 | Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition |
| 95 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
| 96 | Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe |
| 97 | Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems |
| 98 | Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 |
| 99 | Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si |
| 100 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
| 101 | Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films |
| 102 | Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries |
| 103 | Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems |
| 104 | Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition |
| 105 | Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells |
| 106 | Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess |
| 107 | Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge |
| 108 | A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance |
| 109 | Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer |
| 110 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
| 111 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
| 112 | Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors |
| 113 | Hafnia and alumina on sulphur passivated germanium |
| 114 | PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads |
| 115 | Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method |
| 116 | Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene |
| 117 | Patterned deposition by plasma enhanced spatial atomic layer deposition |
| 118 | Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications |
| 119 | The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition |
| 120 | Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface |
| 121 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
| 122 | Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers |
| 123 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
| 124 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
| 125 | Two-stage permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon |
| 126 | Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million |
| 127 | Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration |
| 128 | In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition |
| 129 | SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition |
| 130 | Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing |
| 131 | Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 |
| 132 | Method of Fabrication for Encapsulated Polarizing Resonant Gratings |
| 133 | Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells |
| 134 | Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature |
| 135 | Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells |
| 136 | Liquid-phase-deposited siloxane-based capping layers for silicon solar cells |
| 137 | Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell |
| 138 | Toward reliable MIS- and MOS-gate structures for GaN lateral power devices |
| 139 | Using top graphene layer as sacrificial protection during dielectric atomic layer deposition |
| 140 | Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3 |
| 141 | Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN |
| 142 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
| 143 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
| 144 | Dynamic threshold voltage influence on Ge pMOSFET hysteresis |
| 145 | Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics |
| 146 | Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition |
| 147 | Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition |
| 148 | Very high frequency plasma reactant for atomic layer deposition |
| 149 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
| 150 | Ultrathin Surface Coating Enables the Stable Sodium Metal Anode |
| 151 | Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor |
| 152 | Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates |
| 153 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
| 154 | Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets |
| 155 | Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells |
| 156 | Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration |
| 157 | Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer |
| 158 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 159 | Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena |
| 160 | Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition |
| 161 | Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3 |
| 162 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
| 163 | Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition |
| 164 | Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC |
| 165 | Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition |
| 166 | Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories |
| 167 | Device Performances Related to Gate Leakage Current in Al2O3/AlGaN/GaN MISHFETs |
| 168 | Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications |
| 169 | Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate |
| 170 | Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells |
| 171 | Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy |
| 172 | Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer |
| 173 | Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition |
| 174 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
| 175 | Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices |
| 176 | Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime |
| 177 | Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer |
| 178 | Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films |
| 179 | Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic |
| 180 | Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor |
| 181 | On the equilibrium concentration of boron-oxygen defects in crystalline silicon |
| 182 | Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors |
| 183 | Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene |
| 184 | MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion |
| 185 | Graphene photodetectors with a bandwidth >76 GHz fabricated in a 6" wafer process line |
| 186 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
| 187 | Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode |
| 188 | Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition |
| 189 | Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties |
| 190 | Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation |
| 191 | Densification of Thin Aluminum Oxide Films by Thermal Treatments |
| 192 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 193 | Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC) |
| 194 | Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric |
| 195 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
| 196 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
| 197 | Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating |
| 198 | Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs |
| 199 | Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition |
| 200 | Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface |
| 201 | Localized defect states and charge trapping in atomic layer deposited-Al2O3 films |
| 202 | Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 203 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 204 | Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation |
| 205 | Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene |
| 206 | Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition |
| 207 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 208 | Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks |
| 209 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 210 | Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability |
| 211 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
| 212 | Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures |
| 213 | Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells |
| 214 | Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition |
| 215 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
| 216 | Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing |
| 217 | Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal |
| 218 | Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition |
| 219 | Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure |
| 220 | Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 221 | Innovative remote plasma source for atomic layer deposition for GaN devices |
| 222 | Anti-stiction coating for mechanically tunable photonic crystal devices |
| 223 | Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber |
| 224 | Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting |
| 225 | Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments |
| 226 | Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation |
| 227 | Fiber-matrix interface reinforcement using Atomic Layer Deposition |
| 228 | Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement |
| 229 | Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide |
| 230 | Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks |
| 231 | Negative differential resistance in the I-V curves of Al2O3/AlGaN/GaN MIS structures |
| 232 | Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films |
| 233 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
| 234 | Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures |
| 235 | Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 |
| 236 | Gate Insulator for High Mobility Oxide TFT |
| 237 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
| 238 | Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs |
| 239 | Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source |
| 240 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
| 241 | Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates |
| 242 | Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses |
| 243 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
| 244 | Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact |
| 245 | Flexible, light trapping substrates for organic photovoltaics |
| 246 | Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application |
| 247 | Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors |
| 248 | Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition |
| 249 | Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth |
| 250 | Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center |
| 251 | Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect? |
| 252 | Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers |
| 253 | Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment |
| 254 | Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen |
| 255 | Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si |
| 256 | Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon |
| 257 | Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption |
| 258 | Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell |
| 259 | Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition |
| 260 | Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range |
| 261 | Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors |
| 262 | Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition |
| 263 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
| 264 | Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems |
| 265 | Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films |
| 266 | Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes |
| 267 | Low-thermal budget flash light annealing for Al2O3 surface passivation |
| 268 | Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices |
| 269 | Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops |
| 270 | Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs |
| 271 | A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz |
| 272 | Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers |
| 273 | Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition |
| 274 | Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 |
| 275 | Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition |
| 276 | Advances in the fabrication of graphene transistors on flexible substrates |
| 277 | Optical in situ monitoring of plasma-enhanced atomic layer deposition process |
| 278 | DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air |
| 279 | First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina |
| 280 | Fabrication and Characterization of an Extended-Gate AlGaN/GaN-Based Heterostructure Field-Effect Transistor-Type Biosensor for Detecting Immobilized Streptavidin-Biotin Protein Complexes |
| 281 | Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors |
| 282 | 'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition |
| 283 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
| 284 | Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact |
| 285 | Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning |
| 286 | In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors |
| 287 | Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment |
| 288 | Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing |
| 289 | Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition |
| 290 | Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes |
| 291 | Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques |
| 292 | Damage evaluation in graphene underlying atomic layer deposition dielectrics |
| 293 | A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs |
| 294 | Electrical characterization of the slow boron oxygen defect component in Czochralski silicon |
| 295 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
| 296 | High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3 |
| 297 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
| 298 | On the role of nanoporosity in controlling the performance of moisture permeation barrier layers |
| 299 | A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films |
| 300 | Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma |
| 301 | Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications |
| 302 | Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces |
| 303 | Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition |
| 304 | Graphene based on-chip variable optical attenuator operating at 855 nm wavelength |
| 305 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
| 306 | Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride |
| 307 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
| 308 | Fast PEALD ZnO Thin-Film Transistor Circuits |
| 309 | Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges |
| 310 | Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment |
| 311 | Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing |
| 312 | Energy-enhanced atomic layer deposition for more process and precursor versatility |
| 313 | Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures |
| 314 | Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications |
| 315 | Electronic Conduction Mechanisms in Insulators |
| 316 | Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics |
| 317 | Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications |
| 318 | Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides |
| 319 | Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films |
| 320 | Single-Cell Photonic Nanocavity Probes |
| 321 | Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources |
| 322 | Detailed Atomistic Modeling of Si(110) Passivation by Atomic Layer Deposition of Al2O3 |
| 323 | Nitride passivation of the interface between high-k dielectrics and SiGe |
| 324 | Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications |
| 325 | In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3 |
| 326 | Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition |
| 327 | Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor |
| 328 | Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process |
| 329 | Impact of interface materials on side permeation in indirect encapsulation of organic electronics |
| 330 | Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3 |
| 331 | Optical display film as flexible and light trapping substrate for organic photovoltaics |
| 332 | Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides |
| 333 | Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3 |
| 334 | Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers |
| 335 | Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells |
| 336 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
| 337 | Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure |
| 338 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
| 339 | A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer |
| 340 | Graphene-based MMIC process development and RF passives design |
| 341 | Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor |
| 342 | Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells |
| 343 | Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate |
| 344 | Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN |
| 345 | Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor |
| 346 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
| 347 | Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition |
| 348 | Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions |
| 349 | Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer |
| 350 | Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment |
| 351 | Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier |
| 352 | Junction-less nanowire based photodetector: Role of nanowire width |
| 353 | Improved understanding of recombination at the Si/Al2O3 interface |
| 354 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
| 355 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
| 356 | Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection |
| 357 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 358 | The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain |
| 359 | Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content |
| 360 | Al2O3/TiO2 nanolaminate gate dielectric films with enhanced electrical performances for organic field-effect transistors |
| 361 | Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si |
| 362 | Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films |
| 363 | Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition |
| 364 | Photo-Patternable ZnO Thin Films Based on Cross-Linked Zinc Acrylate for Organic/Inorganic Hybrid Complementary Inverters |
| 365 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
| 366 | Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures |
| 367 | Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process |
| 368 | Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates |
| 369 | Charge effects of ultrafine FET with nanodot type floating gate |
| 370 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
| 371 | 1D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices |
| 372 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 373 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
| 374 | Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes |
| 375 | Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition |
| 376 | Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films |
| 377 | Lifetimes exceeding 1ms in 1-Ohm-cm boron-doped Cz-silicon |
| 378 | Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process |
| 379 | The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides |
| 380 | Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN |
| 381 | Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer |
| 382 | Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma |
| 383 | On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation |
| 384 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
| 385 | Simultaneous Roll Transfer and Interconnection of Flexible Silicon NAND Flash Memory |
| 386 | Improvement on the Passivation Effect of Al2O3 Layer Deposited by PA-ALD in Crystalline Silicon Solar Cells |
| 387 | Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals |
| 388 | High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films |
| 389 | Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices |
| 390 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
| 391 | Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment |
| 392 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 393 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
| 394 | Chemically-tunable ultrathin silsesquiazane interlayer for n-type and p-type organic transistors on flexible plastic |
| 395 | Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks |
| 396 | Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD |
| 397 | Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage |
| 398 | Capacitance spectroscopy of gate-defined electronic lattices |
| 399 | Electrically Excited Plasmonic Nanoruler for Biomolecule Detection |
| 400 | Propagation Effects in Carbon Nanoelectronics |
| 401 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
| 402 | Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique |
| 403 | Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films |
| 404 | AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants |
| 405 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 406 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
| 407 | Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition |
| 408 | Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode |
| 409 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
| 410 | Residual stress study of thin films deposited by atomic layer deposition |
| 411 | Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates |
| 412 | Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature |
| 413 | Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors |
| 414 | ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent |
| 415 | Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency |
| 416 | Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils |
| 417 | High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors |
| 418 | DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors |
| 419 | Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy |
| 420 | Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films |
| 421 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
| 422 | Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation |
| 423 | Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films |
| 424 | Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks |
| 425 | Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments |
| 426 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
| 427 | On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies |
| 428 | Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon |
| 429 | Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET |
| 430 | Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film |
| 431 | Lithium-Iron (III) Fluoride Battery with Double Surface Protection |
| 432 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
| 433 | Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide |
| 434 | Experimental verification of electro-refractive phase modulation in graphene |
| 435 | Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V |
| 436 | Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers |
| 437 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
| 438 | Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition |
| 439 | Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors |
| 440 | An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD |
| 441 | Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC |
| 442 | Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions |
| 443 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
| 444 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
| 445 | Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure |
| 446 | Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces |
| 447 | Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection |
| 448 | Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2 |
| 449 | Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition |
| 450 | Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone |
| 451 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
| 452 | Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films |
| 453 | Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells |
| 454 | High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition |
| 455 | Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon |
| 456 | Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide |
| 457 | Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length |
| 458 | New grating concepts in the NIR and SWIR spectral band for high resolution earth-observation spectrometers |
| 459 | Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer |
| 460 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
| 461 | Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers |
| 462 | Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements |
| 463 | A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor |
| 464 | Self-aligned ZnO thin-film transistors with 860 MHz fT and 2 GHz fmax for large-area applications |
| 465 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
| 466 | Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3 |
| 467 | Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition |
| 468 | Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters |
| 469 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
| 470 | N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes |
| 471 | Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment |
| 472 | Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing |
| 473 | Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions |
| 474 | Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor |
| 475 | Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films |
Innatiux is a retained executive recruiting firm with a focus on the search and placement of proven leaders for client companies in the field of high-tech capital equipment and analytical instrumentation. We are seeking WW technical and business leaders with a background in semiconductor deposition to fill confidential senior and executive level positions with our clients. Visit us at: www.innatiux.com
