Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors

Type:
Journal
Info:
J. Vac. Sci. Technol. A 33(1), Jan/Feb 2015
Date:
2014-10-27
DOI:
http://dx.doi.org/10.1116/1.4901231

Author Information

Name Institution
Toshihide NabatameNational Institute for Materials Science (NIMS)
Akihiko OhiNational Institute for Materials Science (NIMS)
Kazuhiro ItoOsaka University
Makoto TakahashiOsaka University
Toyohiro ChikyoNational Institute for Materials Science (NIMS)

Films

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Thermal TaNbOx

Hardware used: Custom
t-Amylimidotris(dimethylamido)tantalum(V), (NtAm)(NMe2)3Ta, TAIMATA
CAS#: 629654-53-1
Where to buy precursor
t-Amylimidotris(dimethylamido)niobium, (NtAm)(NMe2)3Nb
CAS#: 0-0-0
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

SiO2
Al2O3
TaNbOx

Notes

191