Publication Information

Title:
Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
Type:
Journal
Info:
J. Vac. Sci. Technol. A 33(1), Jan/Feb 2015
Date:
2014-10-27

Author Information

Name Institution
Toshihide NabatameNational Institute for Materials Science (NIMS)
Akihiko OhiNational Institute for Materials Science (NIMS)
Kazuhiro ItoOsaka University
Makoto TakahashiOsaka University
Toyohiro ChikyoNational Institute for Materials Science (NIMS)

Films

Plasma Al2O3



Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

SiO2
Al2O3
TaNbOx

Keywords

Notes

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