Publication Information

Title: Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors

Type: Journal

Info: J. Vac. Sci. Technol. A 33(1), Jan/Feb 2015

Date: 2014-10-27

DOI: http://dx.doi.org/10.1116/1.4901231

Author Information

Name

Institution

National Institute for Materials Science (NIMS)

National Institute for Materials Science (NIMS)

Osaka University

Osaka University

National Institute for Materials Science (NIMS)

Films

Plasma Al2O3 using Custom

Deposition Temperature = 200C

75-24-1

7782-44-7

Thermal TaNbOx using Custom

Deposition Temperature = 200C

629654-53-1

0-0-0

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Morphology, Roughness, Topography

TEM, Transmission Electron Microscope

Unknown

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Substrates

SiO2

Al2O3

TaNbOx

Keywords

Notes

191



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