H2O, Water, CAS# 7732-18-5

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 304 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
2Encapsulation method for atom probe tomography analysis of nanoparticles
3Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
4A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
5A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
6A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
7A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
8A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
9AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
10AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
11AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
12AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
13AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
14AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
15Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
16Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
17Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
18Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
19Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
20Atomic layer deposition of metal-oxide thin films on cellulose fibers
21Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
22Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
23AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
24Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
25Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
26Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
27Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
28Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
29Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
30Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
31Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
32Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
33Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
34Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
35Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
36Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
37Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
38Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
39Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
40Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
41Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
42Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
43Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
44Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
45Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
46Experimental verification of electro-refractive phase modulation in graphene
47Fast Flexible Plastic Substrate ZnO Circuits
48Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
49Fiber-matrix interface reinforcement using Atomic Layer Deposition
50Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
51Gate Insulator for High Mobility Oxide TFT
52Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
53Hafnia and alumina on sulphur passivated germanium
54High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
55High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
56Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
57Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
58Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
59Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
60Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
61Improved understanding of recombination at the Si/Al2O3 interface
62Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
63In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
64In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
65Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
66Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
67Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
68Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
69Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
70Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
71Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
72Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
73Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
74Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
75Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
76Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
77Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
78Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
79Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
80Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
81Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
82MANOS performance dependence on ALD Al2O3 oxidation source
83Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
84Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
85Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
86Nitride passivation of the interface between high-k dielectrics and SiGe
87Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
88Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
89On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
90Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
91Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
92Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
93Passivation effects of atomic-layer-deposited aluminum oxide
94Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
95Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
96Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
97Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
98Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
99Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
100Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
101Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
102Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
103Protective capping and surface passivation of III-V nanowires by atomic layer deposition
104RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
105Single-Cell Photonic Nanocavity Probes
106Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
107Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
108Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
109Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
110Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
111Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
112Symmetrical Al2O3-based passivation layers for p- and n-type silicon
113Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
114Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
115Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
116Trapped charge densities in Al2O3-based silicon surface passivation layers
117Tribological properties of thin films made by atomic layer deposition sliding against silicon
118Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
119Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
120Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
121Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
122Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
123Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
124Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
125Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
126Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
127Atomic Layer Deposition of Gold Metal
128Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
129Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition
130Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
131Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition
132Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
133The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
134Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma
135Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
136Plasma enhanced atomic layer deposition of Ga2O3 thin films
137Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
138RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
139Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
140A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
141A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
142An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
143Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
144Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
145Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
146Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
147Breakdown and Protection of ALD Moisture Barrier Thin Films
148Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
149Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
150Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
151Hafnia and alumina on sulphur passivated germanium
152High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
153High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
154In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
155Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
156Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents
157Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
158Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
159Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
160Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
161Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
162Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
163Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
164On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
165Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
166Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
167Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
168Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
169Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
170Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
171Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
172Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
173Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
174Symmetrical Al2O3-based passivation layers for p- and n-type silicon
175Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
176The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
177Trapped charge densities in Al2O3-based silicon surface passivation layers
178Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
179Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
180Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
181Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
182Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
183Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
184Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation
185Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
186Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
187Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition
188Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
189Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
190Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
191Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
192Atomic Layer Deposition of the Solid Electrolyte LiPON
193Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
194Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
195Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
196Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
197Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
198P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
199Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
200Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
201Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
202Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
203Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
204Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
205Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
206Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
207Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices
208Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
209Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
210Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
211Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
212Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
213Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
214Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
215Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
216Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
217In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
218Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
219Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
220Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
221Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
222Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
223Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
224A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
225Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices
226Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
227Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
228Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
229Breakdown and Protection of ALD Moisture Barrier Thin Films
230Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
231Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
232Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
233Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
234Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
235Efficient Catalytic Microreactors with Atomic-Layer-Deposited Platinum Nanoparticles on Oxide Support
236Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
237Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
238Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
239In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
240In-gap states in titanium dioxide and oxynitride atomic layer deposited films
241Infrared Study on Room-temperature Atomic Layer Deposition of TiO2 Using Tetrakis(dimethylamino)titanium and Remote-Plasma Excited Water Vapor
242Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
243Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition
244Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
245Low temperature temporal and spatial atomic layer deposition of TiO2 films
246Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
247Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
248Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
249Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2
250Protective capping and surface passivation of III-V nanowires by atomic layer deposition
251Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode
252Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition
253Room temperature atomic layer deposition of TiO2 on gold nanoparticles
254Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
255Thermal and plasma enhanced atomic layer deposition of TiO2: Comparison of spectroscopic and electric properties
256Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
257Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications
258Tribological properties of thin films made by atomic layer deposition sliding against silicon
259Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
260X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect
261Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
262Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
263Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
264Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
265Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
266Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition
267Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
268Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques
269Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
270Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
271Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
272Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
273Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition
274Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
275Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
276Effect of Process Parameters on Remote PEALD for Highly Transparent ZnO Film Growth
277Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
278Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment
279Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
280Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
281Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
282Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
283New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
284P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
285Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition
286Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
287Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
288Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
289The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
290The Effects of an O2 Plasma on the Optical Properties of Atomic Layer Deposited ZnO
291Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
292P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
293Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
294P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
295Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
296Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
297Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
298Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon
299RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
300Single-Cell Photonic Nanocavity Probes
301Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
302Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics