H2O, Water, CAS# 7732-18-5

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 354 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
2Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
3Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
4Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
5Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
6Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
7Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
8Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
9Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
10Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
11Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
12High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
13A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
14Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma
15Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
16Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
17Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
18Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
19Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
20Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
21Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
22Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
23Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
24Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
25Low temperature temporal and spatial atomic layer deposition of TiO2 films
26Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
27Thermal and plasma enhanced atomic layer deposition of ultrathin TiO2 on silicon from amide and alkoxide precursors: growth chemistry and photoelectrochemical performance
28Fast Flexible Plastic Substrate ZnO Circuits
29Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
30Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition
31Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
32Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
33Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
34Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
35Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
36Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
37Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
38P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
39Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
40Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
41Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
42Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
43Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
44A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
45Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
46Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
47New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
48Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
49RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
50Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
51Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
52Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
53Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
54Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
55Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
56Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
57Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
58Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
59Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
60The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
61Protective capping and surface passivation of III-V nanowires by atomic layer deposition
62P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
63A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
64Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
65Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
66Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
67Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode
68Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
69Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
70The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
71MANOS performance dependence on ALD Al2O3 oxidation source
72Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
73RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
74Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
75Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition
76Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
77Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
78Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
79In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition
80Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
81Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
82Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition
83Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition
84Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
85High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
86Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features
87Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
88Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
89Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
90Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
91Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
92The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
93Tribological properties of thin films made by atomic layer deposition sliding against silicon
94Infrared Study on Room-temperature Atomic Layer Deposition of TiO2 Using Tetrakis(dimethylamino)titanium and Remote-Plasma Excited Water Vapor
95Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
96Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
97Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices
98Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
99In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
100ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies
101Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
102Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
103A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
104Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
105Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
106Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
107Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
108Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
109Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
110Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
111Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
112Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
113Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
114Passivation effects of atomic-layer-deposited aluminum oxide
115Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation
116Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
117Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
118Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
119Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
120High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
121Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
122Hafnia and alumina on sulphur passivated germanium
123Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment
124Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
125The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
126Gate Insulator for High Mobility Oxide TFT
127Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
128Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
129Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
130Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
131Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
132Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2
133Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition
134Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
135Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
136Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
137Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
138Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
139Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
140Room temperature atomic layer deposition of TiO2 on gold nanoparticles
141Nitride passivation of the interface between high-k dielectrics and SiGe
142Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
143Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
144Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
145Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
146Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD
147AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
148Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
149Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon
150Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
151Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
152Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
153The Effects of an O2 Plasma on the Optical Properties of Atomic Layer Deposited ZnO
154Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
155Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
156Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
157Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
158Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
159Encapsulation method for atom probe tomography analysis of nanoparticles
160In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
161Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
162Fiber-matrix interface reinforcement using Atomic Layer Deposition
163Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
164An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
165Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cells
166Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
167Trapped charge densities in Al2O3-based silicon surface passivation layers
168RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
169Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor
170Single-Cell Photonic Nanocavity Probes
171In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
172Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition
173Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
174Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
175Symmetrical Al2O3-based passivation layers for p- and n-type silicon
176Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
177Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
178Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
179Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition
180Atomic Layer Deposition of the Solid Electrolyte LiPON
181Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
182Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features
183Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications
184Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
185Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
186The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
187Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
188Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
189Breakdown and Protection of ALD Moisture Barrier Thin Films
190Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
191Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
192Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
193A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
194Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
195A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
196Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
197Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
198Trapped charge densities in Al2O3-based silicon surface passivation layers
199Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
200Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
201Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
202Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
203Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
204Effect of Process Parameters on Remote PEALD for Highly Transparent ZnO Film Growth
205Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
206Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
207Atomic layer deposition of metal-oxide thin films on cellulose fibers
208Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
209Tribological properties of thin films made by atomic layer deposition sliding against silicon
210Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
211Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
212Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
213Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
214Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
215Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
216Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
217Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
218Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2
219Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
220Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques
221Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
222Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
223Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition
224Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
225Symmetrical Al2O3-based passivation layers for p- and n-type silicon
226Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
227AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
228Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
229Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
230Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition
231Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition
232Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
233Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
234Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
235Protective capping and surface passivation of III-V nanowires by atomic layer deposition
236Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
237Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
238Breakdown and Protection of ALD Moisture Barrier Thin Films
239Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
240Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
241Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
242Atomic Layer Deposition of Gold Metal
243Experimental verification of electro-refractive phase modulation in graphene
244AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
245Thermal and plasma enhanced atomic layer deposition of TiO2: Comparison of spectroscopic and electric properties
246Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition
247A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
248Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
249Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
250Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
251Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
252Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
253Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
254Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
255Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
256Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
257Nanoscale Encapsulation of Hybrid Perovskites Using Hybrid Atomic Layer Deposition
258Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy
259Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
260Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
261AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
262Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
263P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
264Single-Cell Photonic Nanocavity Probes
265P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
266Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
267Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films
268Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
269Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
270Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
271In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
272Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
273High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
274Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
275Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis(ethylcyclopentadienyl)magnesium precursor
276Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
277Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
278Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
279Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
280Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
281In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications
282Hafnia and alumina on sulphur passivated germanium
283Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
284The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
285Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
286Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
287Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
288Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
289AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
290Growth of Bi2O3 Films by Thermal- and Plasma-Enhanced Atomic Layer Deposition Monitored with Real-Time Spectroscopic Ellipsometry for Photocatalytic Water Splitting
291AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
292X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect
293Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
294Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
295A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
296Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents
297Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition
298Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
299Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition
300On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
301On the Trail Ancient Worlds: Comparative Study of Commercial Scandium and Yttrium Precursors, Asgard, Midgard, Vanaheim and Olympus
302Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
303Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
304Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
305Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
306Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
307Improved understanding of recombination at the Si/Al2O3 interface
308Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
309Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition
310Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices
311Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
312Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2
313Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
314AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
315Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
316In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
317Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices
318Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
319Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
320Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
321Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
322Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
323Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
324Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
325Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
326Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
327Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
328Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy
329Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
330Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
331In-gap states in titanium dioxide and oxynitride atomic layer deposited films
332Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
333Efficient Catalytic Microreactors with Atomic-Layer-Deposited Platinum Nanoparticles on Oxide Support
334Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
335Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
336Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
337Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition
338Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
339Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
340Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
341Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
342Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition
343Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
344Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
345Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
346Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
347Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
348Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
349Plasma enhanced atomic layer deposition of Ga2O3 thin films
350Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
351Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
352Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications