H2O, Water, CAS# 7732-18-5

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 292 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
2Encapsulation method for atom probe tomography analysis of nanoparticles
3Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
4A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
5A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
6A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
7A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
8AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
9AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
10AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
11AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
12AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
13AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
14Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
15Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
16Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
17Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
18Atomic layer deposition of metal-oxide thin films on cellulose fibers
19Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
20Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
21AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
22Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
23Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
24Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
25Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
26Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
27Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
28Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
29Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
30Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
31Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
32Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
33Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
34Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
35Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
36Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
37Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
38Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
39Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
40Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
41Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
42Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
43Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
44Experimental verification of electro-refractive phase modulation in graphene
45Fast Flexible Plastic Substrate ZnO Circuits
46Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
47Fiber-matrix interface reinforcement using Atomic Layer Deposition
48Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
49Gate Insulator for High Mobility Oxide TFT
50Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
51Hafnia and alumina on sulphur passivated germanium
52High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
53High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
54Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
55Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
56Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
57Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
58Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
59Improved understanding of recombination at the Si/Al2O3 interface
60Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
61In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
62In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
63Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
64Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
65Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
66Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
67Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
68Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
69Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
70Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
71Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
72Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
73Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
74Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
75Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
76Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
77Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
78Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
79MANOS performance dependence on ALD Al2O3 oxidation source
80Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
81Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
82Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
83Nitride passivation of the interface between high-k dielectrics and SiGe
84Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
85Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
86On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
87Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
88Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
89Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
90Passivation effects of atomic-layer-deposited aluminum oxide
91Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
92Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
93Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
94Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
95Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
96Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
97Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
98Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
99Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
100Protective capping and surface passivation of III-V nanowires by atomic layer deposition
101RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
102Single-Cell Photonic Nanocavity Probes
103Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
104Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
105Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
106Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
107Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
108Symmetrical Al2O3-based passivation layers for p- and n-type silicon
109Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
110Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
111Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
112Trapped charge densities in Al2O3-based silicon surface passivation layers
113Tribological properties of thin films made by atomic layer deposition sliding against silicon
114Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
115Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
116Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
117Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
118Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
119Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
120Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
121Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
122Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
123Atomic Layer Deposition of Gold Metal
124Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
125Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition
126Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
127Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition
128Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
129The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
130Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
131Plasma enhanced atomic layer deposition of Ga2O3 thin films
132Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
133RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
134Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
135A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
136A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
137An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
138Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
139Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
140Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
141Breakdown and Protection of ALD Moisture Barrier Thin Films
142Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
143Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
144Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
145Hafnia and alumina on sulphur passivated germanium
146High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
147High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
148In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
149Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
150Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents
151Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
152Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
153Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
154Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
155Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
156Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
157On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
158Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
159Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
160Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
161Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
162Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
163Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
164Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
165Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
166Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
167Symmetrical Al2O3-based passivation layers for p- and n-type silicon
168Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
169The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
170Trapped charge densities in Al2O3-based silicon surface passivation layers
171Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
172Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
173Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer
174Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
175Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
176Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation
177Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma
178Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
179Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition
180Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
181Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
182Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
183Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
184Atomic Layer Deposition of the Solid Electrolyte LiPON
185Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
186Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
187Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
188Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
189Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
190P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
191Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
192Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
193Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
194Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
195Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
196Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
197Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
198Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier
199Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices
200Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
201Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
202Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
203Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
204Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O
205Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
206Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
207Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
208Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
209In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
210Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
211Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
212Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
213Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
214Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
215Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
216A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
217Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices
218Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
219Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
220Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
221Breakdown and Protection of ALD Moisture Barrier Thin Films
222Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
223Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
224Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O
225Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
226Efficient Catalytic Microreactors with Atomic-Layer-Deposited Platinum Nanoparticles on Oxide Support
227Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
228Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
229Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
230In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
231In-gap states in titanium dioxide and oxynitride atomic layer deposited films
232Infrared Study on Room-temperature Atomic Layer Deposition of TiO2 Using Tetrakis(dimethylamino)titanium and Remote-Plasma Excited Water Vapor
233Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition
234Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
235Low temperature temporal and spatial atomic layer deposition of TiO2 films
236Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
237Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
238Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2
239Protective capping and surface passivation of III-V nanowires by atomic layer deposition
240Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode
241Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition
242Room temperature atomic layer deposition of TiO2 on gold nanoparticles
243Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
244Thermal and plasma enhanced atomic layer deposition of TiO2: Comparison of spectroscopic and electric properties
245Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
246Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications
247Tribological properties of thin films made by atomic layer deposition sliding against silicon
248Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
249X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect
250Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
251Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
252Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation
253Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
254Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
255Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition
256Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
257Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques
258Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
259Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
260Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
261Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
262Characteristics of ZnO Thin Films by Means of Plasma Enhanced Atomic Layer Deposition
263Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
264Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
265Effect of Process Parameters on Remote PEALD for Highly Transparent ZnO Film Growth
266Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition
267Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
268Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
269Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
270Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
271New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
272P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
273Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition
274Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
275Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
276Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
277The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
278The Effects of an O2 Plasma on the Optical Properties of Atomic Layer Deposited ZnO
279Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
280P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
281Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
282P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
283Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
284Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
285Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
286Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon
287RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
288Single-Cell Photonic Nanocavity Probes
289Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
290Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics


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