1 | Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell |
2 | Encapsulation method for atom probe tomography analysis of nanoparticles |
3 | Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells |
4 | A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs |
5 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
6 | A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films |
7 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
8 | A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor |
9 | AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs |
10 | AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD |
11 | AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD |
12 | AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants |
13 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
14 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
15 | Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources |
16 | Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films |
17 | Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length |
18 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
19 | Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors |
20 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
21 | Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene |
22 | Atomic layer deposition of metal-oxide thin films on cellulose fibers |
23 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
24 | Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates |
25 | Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing |
26 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
27 | Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films |
28 | Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C |
29 | Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment |
30 | Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene |
31 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
32 | Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics |
33 | Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition |
34 | Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment |
35 | Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability |
36 | Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor |
37 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
38 | Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating |
39 | Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors |
40 | Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 |
41 | Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition |
42 | Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications |
43 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
44 | Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition |
45 | Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films |
46 | Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition |
47 | Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs |
48 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
49 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
50 | Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film |
51 | Experimental verification of electro-refractive phase modulation in graphene |
52 | Fast Flexible Plastic Substrate ZnO Circuits |
53 | Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 |
54 | Fiber-matrix interface reinforcement using Atomic Layer Deposition |
55 | Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation |
56 | Gate Insulator for High Mobility Oxide TFT |
57 | Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides |
58 | Hafnia and alumina on sulphur passivated germanium |
59 | High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition |
60 | High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3 |
61 | Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition |
62 | Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency |
63 | Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC) |
64 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
65 | Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer |
66 | Improved understanding of recombination at the Si/Al2O3 interface |
67 | Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs |
68 | In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors |
69 | In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition |
70 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
71 | Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells |
72 | Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface |
73 | Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition |
74 | Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate |
75 | Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors |
76 | Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD |
77 | Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3 |
78 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
79 | Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment |
80 | Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene |
81 | Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning |
82 | Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes |
83 | Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells |
84 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
85 | Localized defect states and charge trapping in atomic layer deposited-Al2O3 films |
86 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
87 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
88 | MANOS performance dependence on ALD Al2O3 oxidation source |
89 | Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si |
90 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
91 | Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition |
92 | Nitride passivation of the interface between high-k dielectrics and SiGe |
93 | Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals |
94 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
95 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
96 | Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks |
97 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
98 | Oxide semiconductor thin film transistors on thin solution-cast flexible substrates |
99 | Passivation effects of atomic-layer-deposited aluminum oxide |
100 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
101 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
102 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
103 | Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell |
104 | Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets |
105 | Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor |
106 | Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene |
107 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
108 | Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition |
109 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
110 | RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor |
111 | Single-Cell Photonic Nanocavity Probes |
112 | Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen |
113 | Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells |
114 | Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer |
115 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
116 | Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode |
117 | Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy |
118 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
119 | Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates |
120 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
121 | Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs |
122 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
123 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
124 | Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor |
125 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
126 | Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection |
127 | Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization |
128 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
129 | Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions |
130 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
131 | Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell |
132 | Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells |
133 | Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating |
134 | Atomic Layer Deposition of Gold Metal |
135 | Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films |
136 | Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition |
137 | Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition |
138 | Growth of Bi2O3 Films by Thermal- and Plasma-Enhanced Atomic Layer Deposition Monitored with Real-Time Spectroscopic Ellipsometry for Photocatalytic Water Splitting |
139 | Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition |
140 | Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement |
141 | Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition |
142 | Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices |
143 | The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition |
144 | Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma |
145 | Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy |
146 | Plasma enhanced atomic layer deposition of Ga2O3 thin films |
147 | Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy |
148 | RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma |
149 | Atomic layer deposition of high-mobility hydrogen-doped zinc oxide |
150 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
151 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
152 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
153 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
154 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
155 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
156 | Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing |
157 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
158 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
159 | Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers |
160 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
161 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
162 | Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma |
163 | Hafnia and alumina on sulphur passivated germanium |
164 | High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness |
165 | High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning |
166 | In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential |
167 | Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties |
168 | Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents |
169 | Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V |
170 | Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors |
171 | Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning |
172 | Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon |
173 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
174 | Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions |
175 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
176 | Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors |
177 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
178 | Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition |
179 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
180 | Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation |
181 | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
182 | Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen |
183 | Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures |
184 | Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source |
185 | Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer |
186 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
187 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
188 | Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System |
189 | The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces |
190 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
191 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
192 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
193 | Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer |
194 | Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers |
195 | Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing |
196 | Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films |
197 | Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement |
198 | Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation |
199 | Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma |
200 | Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition |
201 | Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition |
202 | Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3 |
203 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
204 | Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries |
205 | Plasma-Assisted ALD of LiPO(N) for Solid State Batteries |
206 | Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries |
207 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
208 | Atomic Layer Deposition of the Solid Electrolyte LiPON |
209 | Plasma-Assisted ALD of LiPO(N) for Solid State Batteries |
210 | Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes |
211 | Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase |
212 | Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires |
213 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
214 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
215 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
216 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
217 | Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films |
218 | In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications |
219 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
220 | Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide |
221 | Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics |
222 | Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition |
223 | Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide |
224 | Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features |
225 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
226 | Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
227 | Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices |
228 | Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries |
229 | Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
230 | Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon |
231 | Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries |
232 | Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries |
233 | Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O |
234 | Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source |
235 | Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O |
236 | Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O |
237 | Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants |
238 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
239 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
240 | In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications |
241 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
242 | Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition |
243 | Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash |
244 | Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage |
245 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
246 | Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors |
247 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
248 | Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices |
249 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
250 | Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features |
251 | Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization |
252 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
253 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
254 | Characteristics of TiO2 Films Prepared by ALD With and Without Plasma |
255 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
256 | Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O |
257 | Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing |
258 | Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition |
259 | Efficient Catalytic Microreactors with Atomic-Layer-Deposited Platinum Nanoparticles on Oxide Support |
260 | Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment |
261 | Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition |
262 | Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition |
263 | In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition |
264 | In-gap states in titanium dioxide and oxynitride atomic layer deposited films |
265 | Infrared Study on Room-temperature Atomic Layer Deposition of TiO2 Using Tetrakis(dimethylamino)titanium and Remote-Plasma Excited Water Vapor |
266 | Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes |
267 | Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition |
268 | Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2 |
269 | Low temperature temporal and spatial atomic layer deposition of TiO2 films |
270 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
271 | Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries |
272 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
273 | Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2 |
274 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
275 | Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode |
276 | Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition |
277 | Room temperature atomic layer deposition of TiO2 on gold nanoparticles |
278 | Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films |
279 | Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy |
280 | Thermal and plasma enhanced atomic layer deposition of TiO2: Comparison of spectroscopic and electric properties |
281 | Thermal and plasma enhanced atomic layer deposition of ultrathin TiO2 on silicon from amide and alkoxide precursors: growth chemistry and photoelectrochemical performance |
282 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
283 | Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications |
284 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
285 | Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source |
286 | X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect |
287 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
288 | Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation |
289 | Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation |
290 | Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide |
291 | Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition |
292 | Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition |
293 | Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition |
294 | Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques |
295 | Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry |
296 | Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films |
297 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
298 | Atomic layer deposition of high-mobility hydrogen-doped zinc oxide |
299 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
300 | Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition |
301 | Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant |
302 | Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition |
303 | Effect of Process Parameters on Remote PEALD for Highly Transparent ZnO Film Growth |
304 | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
305 | Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment |
306 | Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD |
307 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
308 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
309 | Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells |
310 | New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping |
311 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
312 | Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition |
313 | Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition |
314 | Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
315 | Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System |
316 | The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition |
317 | The Effects of an O2 Plasma on the Optical Properties of Atomic Layer Deposited ZnO |
318 | Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions |
319 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
320 | Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping |
321 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
322 | Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique |
323 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
324 | Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy |
325 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
326 | Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon |
327 | RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor |
328 | Single-Cell Photonic Nanocavity Probes |
329 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
330 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |