| 1 | Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell |
| 2 | Encapsulation method for atom probe tomography analysis of nanoparticles |
| 3 | Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells |
| 4 | A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs |
| 5 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 6 | A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films |
| 7 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
| 8 | A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor |
| 9 | AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs |
| 10 | AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD |
| 11 | AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD |
| 12 | AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants |
| 13 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
| 14 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
| 15 | Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources |
| 16 | Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length |
| 17 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
| 18 | Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors |
| 19 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
| 20 | Atomic layer deposition of metal-oxide thin films on cellulose fibers |
| 21 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
| 22 | Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates |
| 23 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
| 24 | Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films |
| 25 | Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C |
| 26 | Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment |
| 27 | Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene |
| 28 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
| 29 | Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics |
| 30 | Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition |
| 31 | Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment |
| 32 | Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability |
| 33 | Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor |
| 34 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
| 35 | Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors |
| 36 | Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 |
| 37 | Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition |
| 38 | Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications |
| 39 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
| 40 | Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition |
| 41 | Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films |
| 42 | Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs |
| 43 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
| 44 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
| 45 | Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film |
| 46 | Experimental verification of electro-refractive phase modulation in graphene |
| 47 | Fast Flexible Plastic Substrate ZnO Circuits |
| 48 | Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 |
| 49 | Fiber-matrix interface reinforcement using Atomic Layer Deposition |
| 50 | Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation |
| 51 | Gate Insulator for High Mobility Oxide TFT |
| 52 | Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides |
| 53 | Hafnia and alumina on sulphur passivated germanium |
| 54 | High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition |
| 55 | High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3 |
| 56 | Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition |
| 57 | Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency |
| 58 | Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC) |
| 59 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
| 60 | Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer |
| 61 | Improved understanding of recombination at the Si/Al2O3 interface |
| 62 | Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs |
| 63 | In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors |
| 64 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
| 65 | Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells |
| 66 | Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface |
| 67 | Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition |
| 68 | Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate |
| 69 | Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors |
| 70 | Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD |
| 71 | Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3 |
| 72 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
| 73 | Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment |
| 74 | Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene |
| 75 | Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning |
| 76 | Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes |
| 77 | Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells |
| 78 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
| 79 | Localized defect states and charge trapping in atomic layer deposited-Al2O3 films |
| 80 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
| 81 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
| 82 | MANOS performance dependence on ALD Al2O3 oxidation source |
| 83 | Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si |
| 84 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
| 85 | Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition |
| 86 | Nitride passivation of the interface between high-k dielectrics and SiGe |
| 87 | Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals |
| 88 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 89 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
| 90 | Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks |
| 91 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
| 92 | Oxide semiconductor thin film transistors on thin solution-cast flexible substrates |
| 93 | Passivation effects of atomic-layer-deposited aluminum oxide |
| 94 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
| 95 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
| 96 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
| 97 | Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell |
| 98 | Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets |
| 99 | Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor |
| 100 | Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene |
| 101 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
| 102 | Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition |
| 103 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 104 | RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor |
| 105 | Single-Cell Photonic Nanocavity Probes |
| 106 | Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen |
| 107 | Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells |
| 108 | Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer |
| 109 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
| 110 | Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode |
| 111 | Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy |
| 112 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
| 113 | Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates |
| 114 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 115 | Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs |
| 116 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
| 117 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 118 | Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor |
| 119 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 120 | Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection |
| 121 | Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization |
| 122 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
| 123 | Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions |
| 124 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
| 125 | Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell |
| 126 | Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells |
| 127 | Atomic Layer Deposition of Gold Metal |
| 128 | Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films |
| 129 | Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition |
| 130 | Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement |
| 131 | Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition |
| 132 | Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices |
| 133 | The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition |
| 134 | Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma |
| 135 | Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy |
| 136 | Plasma enhanced atomic layer deposition of Ga2O3 thin films |
| 137 | Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy |
| 138 | RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma |
| 139 | Atomic layer deposition of high-mobility hydrogen-doped zinc oxide |
| 140 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 141 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 142 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
| 143 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
| 144 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
| 145 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
| 146 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
| 147 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
| 148 | Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers |
| 149 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
| 150 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
| 151 | Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma |
| 152 | Hafnia and alumina on sulphur passivated germanium |
| 153 | High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness |
| 154 | High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning |
| 155 | In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential |
| 156 | Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties |
| 157 | Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents |
| 158 | Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V |
| 159 | Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors |
| 160 | Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning |
| 161 | Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon |
| 162 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
| 163 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
| 164 | Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors |
| 165 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
| 166 | Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition |
| 167 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
| 168 | Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation |
| 169 | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
| 170 | Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen |
| 171 | Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures |
| 172 | Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source |
| 173 | Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer |
| 174 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
| 175 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
| 176 | Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System |
| 177 | The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces |
| 178 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
| 179 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
| 180 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
| 181 | Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer |
| 182 | Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers |
| 183 | Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films |
| 184 | Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement |
| 185 | Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation |
| 186 | Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma |
| 187 | Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition |
| 188 | Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition |
| 189 | Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3 |
| 190 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
| 191 | Plasma-Assisted ALD of LiPO(N) for Solid State Batteries |
| 192 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
| 193 | Atomic Layer Deposition of the Solid Electrolyte LiPON |
| 194 | Plasma-Assisted ALD of LiPO(N) for Solid State Batteries |
| 195 | Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes |
| 196 | Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase |
| 197 | Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires |
| 198 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
| 199 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 200 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
| 201 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
| 202 | Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films |
| 203 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
| 204 | Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide |
| 205 | Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics |
| 206 | Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide |
| 207 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
| 208 | Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
| 209 | Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices |
| 210 | Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries |
| 211 | Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon |
| 212 | Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O |
| 213 | Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source |
| 214 | Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O |
| 215 | Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O |
| 216 | Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants |
| 217 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
| 218 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
| 219 | In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications |
| 220 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
| 221 | Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition |
| 222 | Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash |
| 223 | Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage |
| 224 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
| 225 | Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors |
| 226 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
| 227 | Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices |
| 228 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
| 229 | Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization |
| 230 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
| 231 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
| 232 | Characteristics of TiO2 Films Prepared by ALD With and Without Plasma |
| 233 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
| 234 | Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O |
| 235 | Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing |
| 236 | Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition |
| 237 | Efficient Catalytic Microreactors with Atomic-Layer-Deposited Platinum Nanoparticles on Oxide Support |
| 238 | Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment |
| 239 | Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition |
| 240 | Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition |
| 241 | In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition |
| 242 | In-gap states in titanium dioxide and oxynitride atomic layer deposited films |
| 243 | Infrared Study on Room-temperature Atomic Layer Deposition of TiO2 Using Tetrakis(dimethylamino)titanium and Remote-Plasma Excited Water Vapor |
| 244 | Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes |
| 245 | Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition |
| 246 | Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2 |
| 247 | Low temperature temporal and spatial atomic layer deposition of TiO2 films |
| 248 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
| 249 | Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries |
| 250 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
| 251 | Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2 |
| 252 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 253 | Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode |
| 254 | Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition |
| 255 | Room temperature atomic layer deposition of TiO2 on gold nanoparticles |
| 256 | Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films |
| 257 | Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy |
| 258 | Thermal and plasma enhanced atomic layer deposition of TiO2: Comparison of spectroscopic and electric properties |
| 259 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
| 260 | Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications |
| 261 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 262 | Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source |
| 263 | X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect |
| 264 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 265 | Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation |
| 266 | Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation |
| 267 | Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide |
| 268 | Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition |
| 269 | Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition |
| 270 | Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition |
| 271 | Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques |
| 272 | Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry |
| 273 | Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films |
| 274 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
| 275 | Atomic layer deposition of high-mobility hydrogen-doped zinc oxide |
| 276 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
| 277 | Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition |
| 278 | Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant |
| 279 | Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition |
| 280 | Effect of Process Parameters on Remote PEALD for Highly Transparent ZnO Film Growth |
| 281 | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
| 282 | Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment |
| 283 | Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD |
| 284 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
| 285 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
| 286 | Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells |
| 287 | New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping |
| 288 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 289 | Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition |
| 290 | Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition |
| 291 | Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
| 292 | Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System |
| 293 | The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition |
| 294 | The Effects of an O2 Plasma on the Optical Properties of Atomic Layer Deposited ZnO |
| 295 | Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions |
| 296 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 297 | Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping |
| 298 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 299 | Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique |
| 300 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
| 301 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
| 302 | Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon |
| 303 | RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor |
| 304 | Single-Cell Photonic Nanocavity Probes |
| 305 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
| 306 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
