1 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
2 | High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition |
3 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
4 | Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate |
5 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
6 | Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions |
7 | Low temperature temporal and spatial atomic layer deposition of TiO2 films |
8 | Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment |
9 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
10 | Fast Flexible Plastic Substrate ZnO Circuits |
11 | Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents |
12 | Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization |
13 | Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques |
14 | Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique |
15 | Thermal and plasma enhanced atomic layer deposition of TiO2: Comparison of spectroscopic and electric properties |
16 | Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries |
17 | Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source |
18 | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
19 | Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates |
20 | Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices |
21 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
22 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
23 | Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition |
24 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
25 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
26 | Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing |
27 | Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2 |
28 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
29 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
30 | Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis |
31 | Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates |
32 | Improved understanding of recombination at the Si/Al2O3 interface |
33 | Atomic layer deposition of high-mobility hydrogen-doped zinc oxide |
34 | The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films |
35 | Atomic layer deposition of high-mobility hydrogen-doped zinc oxide |
36 | Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition |
37 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
38 | A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor |
39 | Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement |
40 | Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films |
41 | In-gap states in titanium dioxide and oxynitride atomic layer deposited films |
42 | Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C |
43 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
44 | Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase |
45 | Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors |
46 | Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition |
47 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
48 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
49 | Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
50 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
51 | Growth of Bi2O3 Films by Thermal- and Plasma-Enhanced Atomic Layer Deposition Monitored with Real-Time Spectroscopic Ellipsometry for Photocatalytic Water Splitting |
52 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
53 | Characteristics of TiO2 Films Prepared by ALD With and Without Plasma |
54 | Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition |
55 | Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets |
56 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
57 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
58 | Atomic layer deposition of metal-oxide thin films on cellulose fibers |
59 | Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs |
60 | Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer |
61 | Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells |
62 | Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O |
63 | Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries |
64 | Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition |
65 | A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films |
66 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
67 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
68 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
69 | AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD |
70 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
71 | Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene |
72 | Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries |
73 | Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing |
74 | Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition |
75 | Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors |
76 | Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V |
77 | Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen |
78 | Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene |
79 | Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries |
80 | Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells |
81 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
82 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
83 | Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon |
84 | Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition |
85 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
86 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
87 | Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices |
88 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
89 | Atmospheric pressure plasma enhanced spatial atomic layer deposition of SnOx as conductive gas diffusion barrier |
90 | Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition |
91 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
92 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
93 | Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2 |
94 | Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition |
95 | Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si |
96 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
97 | Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization |
98 | Growth of controllable ZnO film by atomic layer deposition technique via inductively coupled plasma treatment |
99 | High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3 |
100 | Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor |
101 | Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions |
102 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
103 | Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy |
104 | AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs |
105 | Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications |
106 | Atomic Layer Deposition of Gold Metal |
107 | Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor |
108 | Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O |
109 | Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors |
110 | Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 |
111 | Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3 |
112 | Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy |
113 | Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries |
114 | Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices |
115 | Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System |
116 | Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition |
117 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
118 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
119 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
120 | In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications |
121 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
122 | Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants |
123 | Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer |
124 | Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition |
125 | Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer |
126 | On the Trail Ancient Worlds: Comparative Study of Commercial Scandium and Yttrium Precursors, Asgard, Midgard, Vanaheim and Olympus |
127 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
128 | Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition |
129 | Plasma-Assisted ALD of LiPO(N) for Solid State Batteries |
130 | Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources |
131 | Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers |
132 | Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition |
133 | Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD |
134 | Infrared Study on Room-temperature Atomic Layer Deposition of TiO2 Using Tetrakis(dimethylamino)titanium and Remote-Plasma Excited Water Vapor |
135 | Oxide semiconductor thin film transistors on thin solution-cast flexible substrates |
136 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
137 | Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection |
138 | Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor |
139 | Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition |
140 | Fiber-matrix interface reinforcement using Atomic Layer Deposition |
141 | Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs |
142 | Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy |
143 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
144 | Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition |
145 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
146 | Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films |
147 | Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface |
148 | Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition |
149 | Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry |
150 | Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment |
151 | In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition |
152 | Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells |
153 | Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation |
154 | Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells |
155 | Efficient Catalytic Microreactors with Atomic-Layer-Deposited Platinum Nanoparticles on Oxide Support |
156 | Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen |
157 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
158 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
159 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
160 | A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs |
161 | Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2 |
162 | Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length |
163 | Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon |
164 | High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness |
165 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
166 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
167 | In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications |
168 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
169 | RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor |
170 | Mass Spectrometry Study of Li2CO3 Film Growth by Thermal and Plasma-Assisted Atomic Layer Deposition |
171 | Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors |
172 | Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes |
173 | Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers |
174 | In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors |
175 | Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing |
176 | Gate Insulator for High Mobility Oxide TFT |
177 | Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition |
178 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
179 | Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment |
180 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
181 | Single-Cell Photonic Nanocavity Probes |
182 | The Effects of an O2 Plasma on the Optical Properties of Atomic Layer Deposited ZnO |
183 | Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films |
184 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
185 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
186 | Single-Cell Photonic Nanocavity Probes |
187 | Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell |
188 | Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC) |
189 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
190 | Experimental verification of electro-refractive phase modulation in graphene |
191 | Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O |
192 | Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide |
193 | High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning |
194 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
195 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
196 | Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors |
197 | RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor |
198 | Aluminum tri-isopropoxide as an alternative precursor for atomic layer deposition of aluminum oxide thin films |
199 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
200 | Room temperature atomic layer deposition of TiO2 on gold nanoparticles |
201 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
202 | Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD |
203 | Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source |
204 | Localized defect states and charge trapping in atomic layer deposited-Al2O3 films |
205 | Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode |
206 | Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer |
207 | Passivation effects of atomic-layer-deposited aluminum oxide |
208 | The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films |
209 | Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 |
210 | Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes |
211 | Nanoscale Encapsulation of Hybrid Perovskites Using Hybrid Atomic Layer Deposition |
212 | Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash |
213 | Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides |
214 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
215 | Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide |
216 | Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis(ethylcyclopentadienyl)magnesium precursor |
217 | The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology |
218 | AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD |
219 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
220 | Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions |
221 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
222 | Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition |
223 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
224 | Nitride passivation of the interface between high-k dielectrics and SiGe |
225 | Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide |
226 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
227 | Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement |
228 | Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2 |
229 | Effect of Process Parameters on Remote PEALD for Highly Transparent ZnO Film Growth |
230 | Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition |
231 | Plasma-Assisted ALD of LiPO(N) for Solid State Batteries |
232 | Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation |
233 | Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating |
234 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
235 | Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene |
236 | Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency |
237 | Encapsulation method for atom probe tomography analysis of nanoparticles |
238 | Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics |
239 | New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping |
240 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
241 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
242 | The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces |
243 | Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition |
244 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
245 | Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon |
246 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
247 | Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features |
248 | Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition |
249 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
250 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
251 | Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells |
252 | Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties |
253 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
254 | Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors |
255 | Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells |
256 | Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode |
257 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
258 | Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma |
259 | Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy |
260 | Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications |
261 | Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks |
262 | RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma |
263 | Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source |
264 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
265 | Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning |
266 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
267 | The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition |
268 | Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition |
269 | Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films |
270 | Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning |
271 | Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage |
272 | Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films |
273 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
274 | Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films |
275 | Plasma enhanced atomic layer deposition of Ga2O3 thin films |
276 | Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping |
277 | MANOS performance dependence on ALD Al2O3 oxidation source |
278 | Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals |
279 | Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell |
280 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
281 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
282 | Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
283 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
284 | Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics |
285 | Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires |
286 | Atomic layer deposition of stoichiometric In2O3 films using liquid ethylcyclopentadienyl indium and combinations of H2O and O2 plasma |
287 | Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing |
288 | Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System |
289 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
290 | Atomic Layer Deposition of V1-xMoxO2 Thin Films, Largely Enhanced Luminous Transmittance, Solar Modulation |
291 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
292 | Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition |
293 | Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs |
294 | Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy |
295 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
296 | Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment |
297 | Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces |
298 | Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating |
299 | Atomic Layer Deposition of the Solid Electrolyte LiPON |
300 | Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films |
301 | Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features |
302 | Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition |
303 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
304 | Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition |
305 | Chemically conformal deposition of SrTiO3 thin films by Atomic Layer Deposition using conventional metal organic precursors and remote-plasma activated H2O |
306 | Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures |
307 | Hafnia and alumina on sulphur passivated germanium |
308 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
309 | Atomic layer deposition of high purity Ga2O3 films using liquid pentamethylcyclopentadienyl gallium and combinations of H2O and O2 plasma |
310 | Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant |
311 | In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition |
312 | Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices |
313 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
314 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
315 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
316 | X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect |
317 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
318 | The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition |
319 | Hafnia and alumina on sulphur passivated germanium |
320 | Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell |
321 | Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition |
322 | Area-Selective Atomic Layer Deposition of In2O3:H Using a µ-Plasma Printer for Local Area Activation |
323 | Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition |
324 | Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene |
325 | AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants |
326 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
327 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
328 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
329 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
330 | Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition |
331 | Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes |
332 | Thermal and plasma enhanced atomic layer deposition of ultrathin TiO2 on silicon from amide and alkoxide precursors: growth chemistry and photoelectrochemical performance |
333 | Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3 |
334 | Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition |
335 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
336 | Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation |
337 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
338 | Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor |
339 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
340 | Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition |
341 | Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer |
342 | In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential |
343 | Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film |
344 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
345 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
346 | Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors |
347 | Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries |
348 | Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability |