Publication Information

Title: Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning

Type: Journal

Info: Microelectronic Engineering 86 (2009) 1529 - 1535

Date: 2009-03-10

DOI: http://dx.doi.org/10.1016/j.mee.2009.03.090

Author Information

Name

Institution

IMEC

IMEC

IMEC

IMEC

IMEC

IMEC

IMEC

IMEC

IMEC

IMEC

Films

Thermal HfO2 using Unknown

Deposition Temperature = 300C

13499-05-3

7732-18-5

Thermal HfO2 using Unknown

Deposition Temperature = 300C

19824-55-6

7732-18-5

Thermal Al2O3 using Unknown

Deposition Temperature = 300C

75-24-1

7732-18-5

Plasma Al2O3 using Unknown

Deposition Temperature = 300C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Chemical Composition, Impurities

TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

-

Interface Trap Density

C-V, Capacitance-Voltage Measurements

-

Substrates

GaAs

Keywords

Notes

300C deposition temperatures inferred from text. Might be wrong.

746



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