Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
Type:
Journal
Info:
Microelectronic Engineering 86 (2009) 1529 - 1535
Date:
2009-03-10
Author Information
| Name | Institution |
|---|---|
| Matty Caymax | IMEC |
| Guy Brammertz | IMEC |
| Annelies Delabie | IMEC |
| Sonja Sioncke | IMEC |
| Dennis Lin | IMEC |
| Marco Scarrozza | IMEC |
| Geoffrey Pourtois | IMEC |
| Wei-E Wang | IMEC |
| Marc Meuris | IMEC |
| Marc Heyns | IMEC |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| GaAs |
Notes
| 300C deposition temperatures inferred from text. Might be wrong. |
| 746 |