TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide, CAS# 19824-55-6

Where to buy

NumberVendorRegionLink
1EreztechπŸ‡ΊπŸ‡ΈTetrakis(diethylamino) hafnium
2Sigma-Aldrich, Co. LLCπŸ‡ΊπŸ‡ΈTetrakis(diethylamido)hafnium(IV) 99.99%
3Pegasus ChemicalsπŸ‡¬πŸ‡§Tetrakis(diethylamido)hafnium(IV)
4Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTetrakis(diethylamino)hafnium, 99% (99.99+%-Hf, <0.2% Zr) PURATREM
5Santa Cruz BiotechnologyπŸ‡ΊπŸ‡ΈTetrakis(diethylamino)hafnium
6Apollo ScientificπŸ‡¬πŸ‡§Tetrakis(diethylamino)hafnium 99.999%
7American ElementsπŸ‡ΊπŸ‡ΈTetrakis(diethylamido)hafnium(IV)
8GelestπŸ‡ΊπŸ‡ΈHafnium Diethylamide
9Alfa AesarπŸ‡ΊπŸ‡ΈTetrakis(diethylamino)hafnium(IV), 99%

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 22 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
2Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
3Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
4Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
5Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
6Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
7Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
8Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
9Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
10Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
11Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
12The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process
13Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
14Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
15Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
16Characteristics of HfO2 thin films grown by plasma atomic layer deposition
17Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
18Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
19Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
20Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
21Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
22Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films