TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide, CAS# 19824-55-6

Where to buy

NumberVendorRegionLink
1Gelest🇺🇸Hafnium Diethylamide
2Alfa Aesar🇺🇸Tetrakis(diethylamino)hafnium(IV), 99%
3Apollo Scientific🇬🇧Tetrakis(diethylamino)hafnium 99.999%
4Ereztech🇺🇸Tetrakis(diethylamino) hafnium
5Santa Cruz Biotechnology🇺🇸Tetrakis(diethylamino)hafnium
6Strem Chemicals, Inc.🇺🇸Tetrakis(diethylamino)hafnium, 99% (99.99+%-Hf, <0.2% Zr) PURATREM
7American Elements🇺🇸Tetrakis(diethylamido)hafnium(IV)
8Sigma-Aldrich, Co. LLC🇺🇸Tetrakis(diethylamido)hafnium(IV) 99.99%
9Pegasus Chemicals🇬🇧Tetrakis(diethylamido)hafnium(IV)

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 22 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
2Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
3Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
4Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
5Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
6Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
7Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
8Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
9Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
10Characteristics of HfO2 thin films grown by plasma atomic layer deposition
11Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
12Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
13Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
14Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
15Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
16The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process
17Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
18Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
19Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
20Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
21Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
22Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning