TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide, CAS# 19824-55-6

Where to buy

NumberVendorRegionLink
1Strem Chemicals, Inc.🇺🇸Tetrakis(diethylamino)hafnium, 99% (99.99+%-Hf, <0.2% Zr) PURATREM
2Ereztech🇺🇸Tetrakis(diethylamino) hafnium
3Apollo Scientific🇬🇧Tetrakis(diethylamino)hafnium 99.999%
4Sigma-Aldrich, Co. LLC🇺🇸Tetrakis(diethylamido)hafnium(IV) 99.99%
5Santa Cruz Biotechnology🇺🇸Tetrakis(diethylamino)hafnium
6American Elements🇺🇸Tetrakis(diethylamido)hafnium(IV)
7Gelest🇺🇸Hafnium Diethylamide
8Pegasus Chemicals🇬🇧Tetrakis(diethylamido)hafnium(IV)
9Alfa Aesar🇺🇸Tetrakis(diethylamino)hafnium(IV), 99%

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 22 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
2The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process
3Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
4Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
5Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
6Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
7Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
8Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
9Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
10Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
11Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
12Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
13Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
14Characteristics of HfO2 thin films grown by plasma atomic layer deposition
15Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
16Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
17Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
18Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
19Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
20Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
21Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
22Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates