TDEAHf, (Et₂N)₄Hf, [(C₂H₅)₂N]₄Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide, CAS# 19824-55-6

Where to buy

Number	Vendor	Link
1	Strem Chemicals, Inc.	Tetrakis(diethylamino)hafnium, 99% (99.99+%-Hf, <0.2% Zr) PURATREM
2	Ereztech	Tetrakis(diethylamino)hafnium (99.99+%-Hf (excluding Zr))
3	Gelest	Hafnium Diethylamide

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 13 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
2	Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
3	Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
4	Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
5	Characteristics of HfO2 thin films grown by plasma atomic layer deposition
6	Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
7	Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
8	Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
9	Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
10	Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
11	Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
12	Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
13	Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures

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