TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide, CAS# 19824-55-6

Where to buy

NumberVendorRegionLink
1Alfa Aesar🇺🇸Tetrakis(diethylamino)hafnium(IV), 99%
2Pegasus Chemicals🇬🇧Tetrakis(diethylamido)hafnium(IV)
3Ereztech🇺🇸Tetrakis(diethylamino) hafnium
4Santa Cruz Biotechnology🇺🇸Tetrakis(diethylamino)hafnium
5Sigma-Aldrich, Co. LLC🇺🇸Tetrakis(diethylamido)hafnium(IV) 99.99%
6Gelest🇺🇸Hafnium Diethylamide
7Strem Chemicals, Inc.🇺🇸Tetrakis(diethylamino)hafnium, 99% (99.99+%-Hf, <0.2% Zr) PURATREM
8Apollo Scientific🇬🇧Tetrakis(diethylamino)hafnium 99.999%
9American Elements🇺🇸Tetrakis(diethylamido)hafnium(IV)

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 22 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
2Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
3Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
4Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
5Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
6Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
7Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
8Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
9Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
10Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
11Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
12Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
13Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
14Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
15Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
16Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
17Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
18Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
19Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
20Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
21The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process
22Characteristics of HfO2 thin films grown by plasma atomic layer deposition