TDEAH, Tetrakis (Diethylamido) Hafnium, Tetrakis (Diethylamino) Hafnium, Hafnium Tetrakis (Diethylamide), (Et2N)4Hf, ((C2H5)2N)4Hf, CAS# 19824-55-6

Where to buy

NumberVendorLink
1EreztechTetrakis(diethylamino)hafnium (99.99+%-Hf (excluding Zr))
2Strem Chemicals, Inc.Tetrakis(diethylamino)hafnium, 99% (99.99+%-Hf, <0.2% Zr) PURATREM

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 12 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
2Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
3Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
4Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
5Characteristics of HfO2 thin films grown by plasma atomic layer deposition
6Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
7Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
8Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
9Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
10Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
11Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
12Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures


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