TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide, CAS# 19824-55-6

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Tetrakis(diethylamino)hafnium, 99% (99.99+%-Hf, <0.2% Zr) PURATREM
2EreztechTetrakis(diethylamino)hafnium (99.99+%-Hf (excluding Zr))
3GelestHafnium Diethylamide

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 13 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
2Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
3Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
4Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
5Characteristics of HfO2 thin films grown by plasma atomic layer deposition
6Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
7Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
8Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
9Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
10Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
11Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
12Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
13Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures


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