|1||Ereztech||Tetrakis(diethylamino)hafnium (99.99+%-Hf (excluding Zr))|
|2||Strem Chemicals, Inc.||Tetrakis(diethylamino)hafnium, 99% (99.99+%-Hf, <0.2% Zr) PURATREM|
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Your search for publications using this chemistry returned 12 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.
|1||Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures|
|2||Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation|
|3||Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer|
|4||Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma|
|5||Characteristics of HfO2 thin films grown by plasma atomic layer deposition|
|6||Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates|
|7||Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate|
|8||Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods|
|9||Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning|
|10||Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric|
|11||Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4|
|12||Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures|
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