Publication Information

Title: Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma

Type: Journal

Info: J. Vac. Sci. Technol. B, Vol. 24, No. 3, May/Jun 2006

Date: 2006-02-24

DOI: http://dx.doi.org/10.1116/1.2188405

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Samsung Electronics Co.

Films

Deposition Temperature = 340C

19824-55-6

7782-44-7

Deposition Temperature = 340C

19824-55-6

10024-97-2

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Bonding States

XPS, X-ray Photoelectron Spectroscopy

-

Interfacial Layer

XPS, X-ray Photoelectron Spectroscopy

-

Capacitance

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Fixed Charge

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Leakage Current

I-V, Current-Voltage Measurements

HP 4155A Semiconductor Parameter Analyzer

Substrates

Si(100)

Keywords

Diffusion Barrier

Notes

1199



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