HfO2 Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing HfO2 films returned 149 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
2A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
3A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
4An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
5Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
6Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
7Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
8Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
9Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
10Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
11Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
12AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
13Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
14Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
15Breakdown and Protection of ALD Moisture Barrier Thin Films
16Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
17Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
18Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
19Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
20Characteristics of HfO2 thin films grown by plasma atomic layer deposition
21Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
22Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
23Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
24Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
25CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
26Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
27Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
28Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
29Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
30Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
31Damage evaluation in graphene underlying atomic layer deposition dielectrics
32Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
33Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
34Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
35Dynamic threshold voltage influence on Ge pMOSFET hysteresis
36Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
37Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
38Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
39Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
40Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
41Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
42Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
43Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
44Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
45Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
46Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
47Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
48Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
49Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
50Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
51Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
52Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
53Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
54Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
55Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene
56Forming-free metal-oxide ReRAM by oxygen ion implantation process
57Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
58Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
59Hafnia and alumina on sulphur passivated germanium
60HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
61HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
62High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
63High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
64High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
65High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
66Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
67Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
68Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
69Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
70Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
71Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
72In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
73In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
74Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
75Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
76Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents
77Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
78Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
79Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
80Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
81Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
82Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
83Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
84Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
85Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
86Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
87Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
88Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
89Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
90Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
91Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
92Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
93Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
94Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
95Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
96Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
97Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
98Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
99Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition
100Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
101Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
102On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
103On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
104Optical properties and bandgap evolution of ALD HfSiOx films
105Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
106Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
107PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
108Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
109Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
110Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
111Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
112Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
113Plasma-Modified Atomic Layer Deposition
114Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
115Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
116Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
117Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
118Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
119Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
120Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
121Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
122Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
123Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
124Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
125Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
126Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
127Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
128Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
129Symmetrical Al2O3-based passivation layers for p- and n-type silicon
130Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
131Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
132The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
133The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
134The effects of plasma treatment on the thermal stability of HfO2 thin films
135The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
136The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
137The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
138The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process
139Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
140Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
141Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
142Trapped charge densities in Al2O3-based silicon surface passivation layers
143Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
144Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
145Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
146Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
147Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
148Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors