HfO2 Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing HfO2 films returned 167 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
2Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
3Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents
4Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
5Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
6Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
7Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
8Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
9Forming-free metal-oxide ReRAM by oxygen ion implantation process
10Trapped charge densities in Al2O3-based silicon surface passivation layers
11Optical properties and bandgap evolution of ALD HfSiOx films
12Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
13Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices
14The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process
15Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
16Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
17Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
18Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
19Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
20Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
21Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
22Plasma-Modified Atomic Layer Deposition
23Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
24Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
25Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
26Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
27Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
28Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
29A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
30Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
31Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
32PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
33Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
34On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
35Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
36Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
37Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
38Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
39The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
40HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
41Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
42Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
43Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene
44On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance
45Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
46Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
47Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
48High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
49Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
50Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
51Dynamic threshold voltage influence on Ge pMOSFET hysteresis
52Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
53Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
54Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
55Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
56The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
57Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
58Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
59Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
60Symmetrical Al2O3-based passivation layers for p- and n-type silicon
61Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
62Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
63Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
64Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
65Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition
66Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
67Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
68Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
69Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
70Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
71The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
72Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
73Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
74Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
75Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
76Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
77Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
78Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
79Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
80ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies
81Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
82HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
83Breakdown and Protection of ALD Moisture Barrier Thin Films
84Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
85Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
86Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
87High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
88Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
89Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
90Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
91AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
92The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
93Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
94Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
95Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
96Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
97Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
98The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
99Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
100Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
101Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
102Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
103Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
104Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
105Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
106Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
107Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
108Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
109Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
110Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
111The effects of plasma treatment on the thermal stability of HfO2 thin films
112High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
113Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
114Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
115Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
116Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
117Hafnia and alumina on sulphur passivated germanium
118Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
119Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
120On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
121Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
122Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
123High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
124Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
125Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
126Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
127Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
128Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
129Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
130Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
131Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
132Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition
133Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
134Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
135In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
136A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
137Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
138Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
139In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
140Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
141Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
142Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
143Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
144Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
145Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
146Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma
147Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
148An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
149Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
150Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
151CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
152Characteristics of HfO2 thin films grown by plasma atomic layer deposition
153Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
154Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
155Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
156Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
157Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
158Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
159A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
160HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition
161Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
162Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
163Damage evaluation in graphene underlying atomic layer deposition dielectrics
164Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
165Room-temperature and high-quality HfO2/SiO2 gate stacked film grown by neutral beam enhanced atomic layer deposition
166Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System