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HfO2 Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing HfO2 films returned 167 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
2Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
3Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
4High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
5ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies
6Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
7Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
8Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
9Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
10Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
11Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
12Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
13Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
14Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition
15Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
16Hafnia and alumina on sulphur passivated germanium
17Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
18Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
19Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
20Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
21Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
22Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
23Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
24Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
25Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma
26Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
27Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
28Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
29Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
30Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
31Dynamic threshold voltage influence on Ge pMOSFET hysteresis
32Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
33A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
34The effects of plasma treatment on the thermal stability of HfO2 thin films
35Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
36In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
37Forming-free metal-oxide ReRAM by oxygen ion implantation process
38High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
39Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
40Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
41Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
42Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
43On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
44Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
45The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
46Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
47Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
48Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
49Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
50Plasma-Modified Atomic Layer Deposition
51Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
52HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
53Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
54Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
55Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
56Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
57Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
58The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
59The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
60Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
61Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
62Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
63CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
64The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
65Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
66Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
67Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
68Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
69Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
70Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
71Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
72Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
73Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
74Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
75Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
76HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition
77Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
78Symmetrical Al2O3-based passivation layers for p- and n-type silicon
79Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
80High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
81Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
82Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
83Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
84Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
85Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
86Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
87Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
88Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
89Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
90Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
91Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
92An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
93Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents
94Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene
95Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
96Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
97Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
98Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
99Characteristics of HfO2 thin films grown by plasma atomic layer deposition
100HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
101The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
102High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
103Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
104Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
105Damage evaluation in graphene underlying atomic layer deposition dielectrics
106Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
107Optical properties and bandgap evolution of ALD HfSiOx films
108Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
109Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
110Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
111A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
112Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
113Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
114Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
115Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
116Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
117Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
118Room-temperature and high-quality HfO2/SiO2 gate stacked film grown by neutral beam enhanced atomic layer deposition
119Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
120A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
121Breakdown and Protection of ALD Moisture Barrier Thin Films
122Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
123AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
124Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
125Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
126Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
127Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
128Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
129PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
130Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
131In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
132Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
133Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
134Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
135Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
136Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
137Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
138Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
139The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process
140Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
141Trapped charge densities in Al2O3-based silicon surface passivation layers
142Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
143Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
144Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
145Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
146Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
147Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
148Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
149Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
150Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
151Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
152Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
153Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices
154Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
155Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
156On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
157Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
158Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
159Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
160Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
161Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition
162Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
163On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance
164Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
165Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
166Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor