HfO2 Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing HfO2 films returned 167 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
2Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
3The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
4Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
5Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
6A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
7Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
8Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition
9HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
10Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
11Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents
12Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
13Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
14Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
15Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
16Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
17Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
18High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
19Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
20Hafnia and alumina on sulphur passivated germanium
21A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
22Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
23Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
24The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process
25Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
26Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
27Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
28ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies
29Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
30Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
31Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
32HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
33Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
34Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
35CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
36On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
37Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
38Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
39Dynamic threshold voltage influence on Ge pMOSFET hysteresis
40Room-temperature and high-quality HfO2/SiO2 gate stacked film grown by neutral beam enhanced atomic layer deposition
41Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
42Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
43Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
44Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
45Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
46Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
47Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
48Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
49Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
50Trapped charge densities in Al2O3-based silicon surface passivation layers
51Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
52Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
53On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
54Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
55Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
56Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
57Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma
58Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
59Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
60Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
61Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
62Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
63Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
64Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition
65In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
66A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
67Characteristics of HfO2 thin films grown by plasma atomic layer deposition
68Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
69Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
70The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
71Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
72Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
73Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
74Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
75Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
76Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
77Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
78Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
79Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
80Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
81High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
82Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
83Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
84Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
85Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
86Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
87Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
88Damage evaluation in graphene underlying atomic layer deposition dielectrics
89Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
90Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
91Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
92Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
93In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
94Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
95Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
96Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
97On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance
98PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
99Optical properties and bandgap evolution of ALD HfSiOx films
100Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
101Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
102Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
103Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
104The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
105Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
106Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
107HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition
108Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
109Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
110Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene
111Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices
112Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
113Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
114Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
115Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
116Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
117Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
118The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
119Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
120Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
121The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
122Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
123Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
124Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
125Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
126Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
127Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
128An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
129Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
130Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
131Forming-free metal-oxide ReRAM by oxygen ion implantation process
132Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
133Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
134Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
135Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
136Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
137Symmetrical Al2O3-based passivation layers for p- and n-type silicon
138Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
139AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
140Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
141The effects of plasma treatment on the thermal stability of HfO2 thin films
142Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
143Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
144Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
145Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
146Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
147Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
148Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
149Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
150Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
151Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
152Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
153Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
154Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
155Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
156Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
157Breakdown and Protection of ALD Moisture Barrier Thin Films
158Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
159Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
160Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
161Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
162High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
163Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
164Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
165Plasma-Modified Atomic Layer Deposition
166High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors