HfO2 Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing HfO2 films returned 141 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
2A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
3A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
4An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
5Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
6Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
7Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
8Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
9Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
10Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
11AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
12Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
13Breakdown and Protection of ALD Moisture Barrier Thin Films
14Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
15Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
16Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
17Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
18Characteristics of HfO2 thin films grown by plasma atomic layer deposition
19Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
20Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
21Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
22Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
23CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
24Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
25Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
26Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
27Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
28Damage evaluation in graphene underlying atomic layer deposition dielectrics
29Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
30Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
31Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
32Dynamic threshold voltage influence on Ge pMOSFET hysteresis
33Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
34Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
35Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
36Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
37Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
38Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
39Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
40Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
41Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
42Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
43Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
44Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
45Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
46Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
47Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
48Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
49Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
50Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
51Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene
52Forming-free metal-oxide ReRAM by oxygen ion implantation process
53Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
54Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
55Hafnia and alumina on sulphur passivated germanium
56HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
57HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
58High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
59High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
60High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
61High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
62Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
63Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
64Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
65Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
66Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
67Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
68In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
69In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
70Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
71Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents
72Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
73Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
74Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
75Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
76Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
77Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
78Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
79Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
80Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
81Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
82Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
83Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
84Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
85Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
86Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
87Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
88Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
89Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
90Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
91Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
92Microstructure and electrical properties of thin HfO2 deposited by plasma-enhanced atomic layer deposition
93Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
94Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
95On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
96Optical properties and bandgap evolution of ALD HfSiOx films
97Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
98Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
99PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases
100Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
101Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
102Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
103Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
104Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
105Plasma-Modified Atomic Layer Deposition
106Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
107Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
108Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
109Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
110Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
111Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
112Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
113Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
114Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
115Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
116Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
117Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
118Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
119Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
120Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
121Symmetrical Al2O3-based passivation layers for p- and n-type silicon
122Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
123Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
124The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
125The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
126The effects of plasma treatment on the thermal stability of HfO2 thin films
127The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
128The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
129The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
130The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process
131Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
132Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
133Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
134Trapped charge densities in Al2O3-based silicon surface passivation layers
135Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
136Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
137Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
138Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
139Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
140Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors


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