HfO2 Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing HfO2 films returned 120 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
2A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
3A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
4An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
5Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
6Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
7Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
8Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
9Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
10Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
11AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
12Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
13Breakdown and Protection of ALD Moisture Barrier Thin Films
14Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
15Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
16Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition
17Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
18Characteristics of HfO2 thin films grown by plasma atomic layer deposition
19Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
20Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
21Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
22CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
23Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
24Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
25Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
26Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
27Damage evaluation in graphene underlying atomic layer deposition dielectrics
28Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
29Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
30Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
31Dynamic threshold voltage influence on Ge pMOSFET hysteresis
32Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
33Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
34Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
35Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
36Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
37Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
38Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
39Effects of rapid thermal annealing on the properties of HfO2/La2O3 nanolaminate films deposited by plasma enhanced atomic layer deposition
40Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
41Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
42Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide
43Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
44Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
45Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
46Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene
47Forming-free metal-oxide ReRAM by oxygen ion implantation process
48Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
49Hafnia and alumina on sulphur passivated germanium
50HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
51HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
52High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
53High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
54High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
55High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors
56Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
57Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
58Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
59Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
60Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
61Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
62In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
63Infrared study on room-temperature atomic layer deposition of HfO2 using tetrakis(ethylmethylamino)hafnium and remote plasma-excited oxidizing agents
64Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
65Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
66Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
67Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
68Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
69Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
70Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
71Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
72Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
73Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
74Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
75Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
76Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
77Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
78Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
79Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
80Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
81Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
82On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
83Optical properties and bandgap evolution of ALD HfSiOx films
84Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
85Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
86Plasma assisted atomic layer deposited hafnium oxide films for silicon surface passivation
87Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
88Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
89Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
90Plasma-Modified Atomic Layer Deposition
91Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
92Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
93Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
94Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
95Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
96Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures
97Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
98Simulation and Fabrication of HfO2 Thin Films Passivating Si from a Numerical Computer and Remote Plasma ALD
99Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
100Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
101Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
102Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
103Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
104Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
105Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
106Symmetrical Al2O3-based passivation layers for p- and n-type silicon
107Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
108Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
109The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
110The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
111The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
112The Influence of Technology and Switching Parameters on Resistive Switching Behavior of Pt/HfO2/TiN MIM Structures
113Total-dose radiation response and and post-irradiation annealing response of Hafnium capacitors
114Trapped charge densities in Al2O3-based silicon surface passivation layers
115Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
116Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
117Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
118Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
119Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
120Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors


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