Publication Information

Title: Characteristics of HfO2 thin films grown by plasma atomic layer deposition

Type: Journal

Info: Applied Physics Letters 87, 053108 (2005)

Date: 2005-06-14

DOI: http://dx.doi.org/10.1063/1.2005370

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Korea Research Institute of Standards and Science (KRISS)

Korea Research Institute of Standards and Science (KRISS)

North Carolina State University

Films

Plasma HfO2 using Custom Remote

Deposition Temperature = 250C

19824-55-6

7782-44-7

Deposition Temperature = 250C

19824-55-6

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

Interfacial Layer

MEIS, Medium Energy Ion Scattering

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Fixed Charge

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

Si(100)

Keywords

Direct vs Remote Plasma Comparison

Notes

1208



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