Characteristics of HfO2 thin films grown by plasma atomic layer deposition

Type:
Journal
Info:
Applied Physics Letters 87, 053108 (2005)
Date:
2005-06-14

Author Information

Name Institution
Jinwoo KimHanyang University
Seokhoon KimHanyang University
Hyeongtag JeonHanyang University
Mannho ChoKorea Research Institute of Standards and Science (KRISS)
Kwunbum ChungKorea Research Institute of Standards and Science (KRISS)
Choelhwyi BaeNorth Carolina State University

Films



Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: MEIS, Medium Energy Ion Scattering

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Si(100)

Notes

1208