Hyeongtag Jeon Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Hyeongtag Jeon returned 62 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
2The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process
3Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods
4Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
5Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
6The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition
7Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
8Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
9Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
10Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
11Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2 plasma-pretreated Si substrates
12Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
13The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
14Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
15A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
16Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
17Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition
18Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
19Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation
20Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
21Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
22Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
23Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
24Characteristics of Metal-Oxide-Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique
25Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
26Composition, structure, and electrical characteristics of HfO2 gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods
27Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate
28Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
29ZrO2 Gate Dielectric Deposited by Plasma-Enhanced Atomic Layer Deposition Method
30Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
31Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
32Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
33Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma
34Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
35The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
36Characteristics of Atomic-Layer-Deposited HfO2 Films by Using a Remote Plasma on Pre-Deposited Hf Metal Layer
37Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
38Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf(mp)4
39The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
40Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
41Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
42Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
43Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
44Effects of Remote Plasma Pre-oxidation of Si Substrates on the Characteristics of ALD-Deposited HfO2 Gate Dielectrics
45Effects of N2 RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO2 Films
46Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
47Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
48Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method
49Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
50Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
51Carbon content control of silicon oxycarbide film with methane containing plasma
52Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
53Characteristics of HfO2 thin films grown by plasma atomic layer deposition
54Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
55Effect of Crystal Structure and Grain Size on Photo-Catalytic Activities of Remote-Plasma Atomic Layer Deposited Titanium Oxide Thin Film
56HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method
57Deposition temperature dependence of titanium oxide thin films grown by remote-plasma atomic layer deposition
58Gadolinium nitride films deposited using a PEALD based process
59Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
60Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
61The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
62Deposition and Plasma Measurements of Zr-Oxide Films with Low Impurity Concentrations by Remote PEALD