Publication Information

Title: Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications

Type: Journal

Info: Journal of Vacuum Science & Technology A 30, 01A104 (2012)

Date: 2011-08-23

DOI: http://dx.doi.org/10.1116/1.3639131

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Plasma Al2O3 using Custom ICP

Deposition Temperature = 200C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Plasma Species

OES, Optical Emission Spectroscopy

Custom

Bonding States

XPS, X-ray Photoelectron Spectroscopy

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Images

TEM, Transmission Electron Microscope

-

Capacitance

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Substrates

Si(100)

Al2O3

Au

Keywords

Notes

634



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