Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 30, 01A104 (2012)
Date:
2011-08-23
DOI:
http://dx.doi.org/10.1116/1.3639131

Author Information

Name Institution
Jaesang LeeHanyang University
Hyungchul KimHanyang University
Taeyong ParkHanyang University
Youngbin KoHanyang University
Jaehun RyuHanyang University
Heeyoung JeonHanyang University
Jingyu ParkHanyang University
Hyeongtag JeonHanyang University

Films

Plasma Al2O3

Hardware used: Custom Remote Inductively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Custom

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

Si(100)
Al2O3
Au

Notes

634