TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorRegionLink
1Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum packaged for use in deposition systems
2Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
3Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al) PURATREM
4Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
5Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in high-temp cylinder
6DOCK/CHEMICALS🇩🇪Trimethylaluminum
7Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%
8Pegasus Chemicals🇬🇧Trimethylaluminium
9Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
10American Elements🇺🇸Trimethylaluminum
11Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum 97%
12Yoodatech (Shanghai) Co., LtdTMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3 - contact maggie@yoodatech.com

www.plasma-ald.com does not endorse any chemical suppliers. These links are provided for the benefit of our users. If a link goes bad, let us know.

If you would like your company's precursor products listed, or your existing listing changed or removed, send me an email.


Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 615 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
2Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
3Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
4GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
5New materials for memristive switching
6Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
7Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
8Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
9Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
10Nonvolatile Capacitive Crossbar Array for In-Memory Computing
11Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
12Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
13Perspectives on future directions in III-N semiconductor research
14Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
15Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
16Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
17Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
18Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
19Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
20Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
21Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
22Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
23Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources
24Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
25Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
26AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
27Symmetrical Al2O3-based passivation layers for p- and n-type silicon
28Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
29Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
30On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
31Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
32MANOS performance dependence on ALD Al2O3 oxidation source
33Single-Cell Photonic Nanocavity Probes
34Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
35Encapsulation method for atom probe tomography analysis of nanoparticles
36The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
37Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
38Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
39A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
40A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
41Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
42Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
43Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
44Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
45Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
46Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy
47Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
48Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
49Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
50Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
51Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers
52Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
53High-Reflective Coatings For Ground and Space Based Applications
54Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
55Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
56The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
57Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth
58PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
59Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
60Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
61Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
62Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
63Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
64Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
65Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
66Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
67Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
68Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
69On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
70Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
71Propagation Effects in Carbon Nanoelectronics
72'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
73Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
74AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
75Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
76Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
77Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition
78Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
79Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
80AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
81Improved understanding of recombination at the Si/Al2O3 interface
82Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
83Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
84Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
85Impact of interface materials on side permeation in indirect encapsulation of organic electronics
86Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
87Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
88Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
89Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
90Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
91Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
92Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
93Trapped charge densities in Al2O3-based silicon surface passivation layers
94Optical and Electrical Properties of AlxTi1-xO Films
95Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
96Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
97Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
98Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
99Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
100Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
101Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
102Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
103High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
104Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
105Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
106Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
107AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
108Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
109Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
110Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
111Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
112Very high frequency plasma reactant for atomic layer deposition
113Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
114Mechanical properties of thin-film Parylene-metal-Parylene devices
115Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
116Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
117Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
118Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
119Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
120Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
121Breakdown and Protection of ALD Moisture Barrier Thin Films
122Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
123Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
124Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
125Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
126Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
127Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
128Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
129Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
130Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
131Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
132Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
133Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
134Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
135The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
136Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
137Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
138Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
139Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
140Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
141TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
142Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
143Damage evaluation in graphene underlying atomic layer deposition dielectrics
144Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors
145Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
146Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
147Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
148Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
149Charge effects of ultrafine FET with nanodot type floating gate
150First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
151Hafnia and alumina on sulphur passivated germanium
152823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
153Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
154Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
155Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
156Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
157Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
158Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
159Energy-enhanced atomic layer deposition for more process and precursor versatility
160Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
161A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
162Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
163RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
164Perspectives on future directions in III-N semiconductor research
165Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition
166Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
167Densification of Thin Aluminum Oxide Films by Thermal Treatments
168AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
169Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
170Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
171Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
172Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
173Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
174Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
175Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
176Fast Flexible Plastic Substrate ZnO Circuits
177Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
178Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition
179Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
180Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
181High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
182Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
183Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
184Flexible, light trapping substrates for organic photovoltaics
185Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
186Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
187Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
188Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
189On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
190Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
191Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
192Lithium-Iron (III) Fluoride Battery with Double Surface Protection
193Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
194Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
195Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
196N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
197Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
198Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
199Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
200Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
201Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
202Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
203Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
204Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
205A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer
206Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
207Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
208A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
209Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
210Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
211Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
212A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
213Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
214Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
215Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
216Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
217Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
218An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
219Nitride passivation of the interface between high-k dielectrics and SiGe
220Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
221Atomic layer epitaxy for quantum well nitride-based devices
222Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
223Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
224Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
225High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
226Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
227Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
228Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
229Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
230Silicon surface passivation with atomic layer deposited aluminum nitride
231Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
232Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
233Radical Enhanced Atomic Layer Deposition of Metals and Oxides
234Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
235Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
236Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
237Optimization of the Surface Structure on Black Silicon for Surface Passivation
238The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
239Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
240Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
241Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
242Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
243Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
244A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
245Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
246Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
247ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
248Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
249Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
250Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
251Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
252PEALD AlN: controlling growth and film crystallinity
253Protective capping and surface passivation of III-V nanowires by atomic layer deposition
254Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
255Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
256Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
257Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
258Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
259Tribological properties of thin films made by atomic layer deposition sliding against silicon
260Advances in the fabrication of graphene transistors on flexible substrates
261Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
262Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
263Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
264Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
265Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
266Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
267Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
268Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
269Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
270Low-Power Double-Gate ZnO TFT Active Rectifier
271Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
272Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
273Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
274Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
275Sub-nanometer heating depth of atomic layer annealing
276Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
277AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
278Optical in situ monitoring of plasma-enhanced atomic layer deposition process
279Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
280Atomic layer epitaxy for quantum well nitride-based devices
281Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
282Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
283Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
284Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
285Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
286Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
287Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
288Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
289Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
290Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
291Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
292Patterned deposition by plasma enhanced spatial atomic layer deposition
293The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
294Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
295Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
296GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
297Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
298Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
299Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
300Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
301Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
302Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
303Innovative remote plasma source for atomic layer deposition for GaN devices
304Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
305Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
306Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
307Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
308Optical display film as flexible and light trapping substrate for organic photovoltaics
309Anti-stiction coating for mechanically tunable photonic crystal devices
310Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
311Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
312Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
313Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
314Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
315Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
316Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
317Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
318Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
319Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
320Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
321Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
322Nanoscale Encapsulation of Hybrid Perovskites Using Hybrid Atomic Layer Deposition
323Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
324Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
325Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
326Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
327Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
328Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
329Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
330Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
331Tube-type plasma-enhanced atomic layer deposition of aluminum oxide: Enabling record lab performance for the industry with demonstrated cell efficiencies >24%
332Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
333Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
334Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
335Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
336Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
337Fiber-matrix interface reinforcement using Atomic Layer Deposition
338A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
339Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
340Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
341Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
342Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
343Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
344Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
345Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
346Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
347Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
348Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
349Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
350Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
351Properties of AlN grown by plasma enhanced atomic layer deposition
352Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
353Structural and optical characterization of low-temperature ALD crystalline AlN
354Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
355Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition
356DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
357Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
358Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
359Method of Fabrication for Encapsulated Polarizing Resonant Gratings
360Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
361Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
362Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
363Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
364Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
365Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
366Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
367Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
368Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
369Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
370Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
371Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
372Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
373Tribological properties of thin films made by atomic layer deposition sliding against silicon
374Dynamic tuning of plasmon resonance in the visible using graphene
37546-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
376Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
377Composite materials and nanoporous thin layers made by atomic layer deposition
378A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
379Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
380Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
381Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
382On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
383Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
384Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
385Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
386Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
387AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
388Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
389Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition
390Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
391Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
392Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
393Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
394Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
395Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
396Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
397Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
398Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
399In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
400Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
401Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
402On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
403Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
404TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
405Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
406Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
407The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
408Crystalline growth of AlN thin films by atomic layer deposition
409Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
410Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
411Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
412Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
413XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
414Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
415Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
416High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
417Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
418Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
419Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
420Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
421Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
422Gate Insulator for High Mobility Oxide TFT
423Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
424High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
425Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
426Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
427Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
428Experimental verification of electro-refractive phase modulation in graphene
429Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
430Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
431Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
432Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
433Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
434Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
435Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
436Plasma enhanced atomic layer deposition of aluminum sulfide thin films
437Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
438AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
439Atomic layer deposition of metal-oxide thin films on cellulose fibers
440Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
441High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
442Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
443Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
444Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
445Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
446Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
447Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
448Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
449Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
450Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
451Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
452Nitride memristors
453Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
454Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
455Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition
456AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
457Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
458High-efficiency embedded transmission grating
459Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
460Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
461Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
462Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
463Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
464Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
465Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
466Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
467Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
468PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
469Residual stress study of thin films deposited by atomic layer deposition
470On the equilibrium concentration of boron-oxygen defects in crystalline silicon
471Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
472Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
473Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
474Tuning size and coverage of Pd nanoparticles using atomic layer deposition
475A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
476AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
477Band alignment of Al2O3 with (-201) β-Ga2O3
478Capacitance spectroscopy of gate-defined electronic lattices
479Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
480Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
481Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
482Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
483Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors
484Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
485Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
486Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
487Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
488Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
489Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
490Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
491Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
492Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
493Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
494Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
495Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
496Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
497Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
498MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
499Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
500Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
501Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
502Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
503Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
504AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
505Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
506Radical Enhanced Atomic Layer Deposition of Metals and Oxides
507Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
508In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
5091D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
510Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
511Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
512Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
513Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
514Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
515Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
516Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
517In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition
518Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
519Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
520Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
521Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
522A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
523Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
524Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
525Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
526Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
527Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
528Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
529Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
530Study on the characteristics of aluminum thin films prepared by atomic layer deposition
531Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
532Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
533Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
534Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
535Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
536Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor
537Fast PEALD ZnO Thin-Film Transistor Circuits
538Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
539Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
540Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
541Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
542Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
543Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
544Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
545Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
546Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
547Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
548Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
549Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
550Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
551High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
552Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
553In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
554Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
555Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
556Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films
557Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma
558Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
559Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
560Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
561Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
562Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
563The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
564Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
565Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
566Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
567Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
568Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
569Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
570Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
571Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
572Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
573Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
574Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
575Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
576Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
577Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
578Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
579Protective capping and surface passivation of III-V nanowires by atomic layer deposition
580Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
581Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
582Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
583Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
584Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
585ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
586Breakdown and Protection of ALD Moisture Barrier Thin Films
587Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
588Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
589Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
590Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
591In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
592Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
593DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
594Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
595Passivation effects of atomic-layer-deposited aluminum oxide
596Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment