TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorRegionLink
1Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
2Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in high-temp cylinder
3Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98% (Material sold in non-returnable cylinder)
4Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al) PURATREM
5EpiValence🇬🇧Aluminium trimethyl
6Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
7Pegasus Chemicals🇬🇧Trimethylaluminium
8DOCK/CHEMICALS🇩🇪Trimethylaluminum
9Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum 97%
10American Elements🇺🇸Trimethylaluminum
11Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum packaged for use in deposition systems
12Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 604 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
2The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
3Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
4Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
5Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
6Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
7Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
8Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
9Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
10Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
11Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
12Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
13Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
14Crystalline growth of AlN thin films by atomic layer deposition
15Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
16Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
17Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
18On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
19Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
20Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
21Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
22Optical and Electrical Properties of AlxTi1-xO Films
23Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
24Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
25Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films
26Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
27In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
28Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
291D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
30Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
31Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
32Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
33Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
34Atomic layer deposition of metal-oxide thin films on cellulose fibers
35Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
36Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
37Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
38Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
39Radical Enhanced Atomic Layer Deposition of Metals and Oxides
40Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
41Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
42Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
43Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
44Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition
45Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
46Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
47Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
48Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
49Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
50Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
51Method of Fabrication for Encapsulated Polarizing Resonant Gratings
52Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
53Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
54TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
55Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
56Impact of interface materials on side permeation in indirect encapsulation of organic electronics
57Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
58Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
59Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
60Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
61High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
62Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
63Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
64Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
65Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
66Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
67Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
68On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
69Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
70GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
71Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
72Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
73Encapsulation method for atom probe tomography analysis of nanoparticles
74Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
75Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
76Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
77Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
78Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
79On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
80High-efficiency embedded transmission grating
81Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
82Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
83Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
84Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
85Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
86The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
87Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
88Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
89Sub-nanometer heating depth of atomic layer annealing
90Hafnia and alumina on sulphur passivated germanium
91Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
92Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
93Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
94Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
95Dynamic tuning of plasmon resonance in the visible using graphene
96Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
97Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
98Optical display film as flexible and light trapping substrate for organic photovoltaics
99Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
100Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
101New materials for memristive switching
102Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
103Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
104Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
105Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
106Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
107Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
108Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
109Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
110Energy-enhanced atomic layer deposition for more process and precursor versatility
111Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
112Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
113Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
114Tuning size and coverage of Pd nanoparticles using atomic layer deposition
115Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
116Fiber-matrix interface reinforcement using Atomic Layer Deposition
117Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
118Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
119High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
120Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
121Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
122Optical in situ monitoring of plasma-enhanced atomic layer deposition process
123Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
124Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
125The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
126GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
127On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
128Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
129A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
130Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
131A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
132Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
133Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
134Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
135Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
136Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
137Capacitance spectroscopy of gate-defined electronic lattices
138Perspectives on future directions in III-N semiconductor research
139Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
140Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
141The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
142Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
143Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
144Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
145Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
146Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
147Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
148Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
149Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
150Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
151Mechanical properties of thin-film Parylene-metal-Parylene devices
152Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
153Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
154Plasma enhanced atomic layer deposition of aluminum sulfide thin films
155AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
156Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
157Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
158Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
159Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers
160AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
161Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
162Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
163Protective capping and surface passivation of III-V nanowires by atomic layer deposition
164Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
165In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition
166Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
167Breakdown and Protection of ALD Moisture Barrier Thin Films
168Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
169Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
170Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
171Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
172Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
173Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
174Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
175Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
176Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
177Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
178Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
179Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
180Silicon surface passivation with atomic layer deposited aluminum nitride
181'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
182Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
183Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
184AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
185Composite materials and nanoporous thin layers made by atomic layer deposition
186Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
187TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
188Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
189Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
190Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
191Properties of AlN grown by plasma enhanced atomic layer deposition
192Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
193Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
194Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
195Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
196Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
197Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
198Gate Insulator for High Mobility Oxide TFT
199Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
200Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
201AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
202In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
203Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
204Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
205Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
206Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
207Trapped charge densities in Al2O3-based silicon surface passivation layers
208Passivation effects of atomic-layer-deposited aluminum oxide
209Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
210Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
211Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
212Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
213Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
214DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
215Anti-stiction coating for mechanically tunable photonic crystal devices
216Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
217Tribological properties of thin films made by atomic layer deposition sliding against silicon
218Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
219High-Reflective Coatings For Ground and Space Based Applications
220Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
221Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
222Structural and optical characterization of low-temperature ALD crystalline AlN
223Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
224Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
225Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
226The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
227Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
228PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
229Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
230AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
231Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
232Fast PEALD ZnO Thin-Film Transistor Circuits
233Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
23446-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
235Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
236Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
237Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
238Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
239Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
240Symmetrical Al2O3-based passivation layers for p- and n-type silicon
241Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
242A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
243Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
244Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
245Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
246Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
247Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
248Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
249Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
250Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
251Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
252Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
253Advances in the fabrication of graphene transistors on flexible substrates
254Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
255Damage evaluation in graphene underlying atomic layer deposition dielectrics
256Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
257Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
258Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
259Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
260Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
261AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
262Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
263Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
264Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
265Fast Flexible Plastic Substrate ZnO Circuits
266Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
267Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
268Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
269Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
270Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
271Residual stress study of thin films deposited by atomic layer deposition
272Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
273Atomic layer epitaxy for quantum well nitride-based devices
274On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
275Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
276Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
277AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
278Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
279Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
280High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
281PEALD AlN: controlling growth and film crystallinity
282Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
283Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
284Atomic layer epitaxy for quantum well nitride-based devices
285Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
286Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
287Breakdown and Protection of ALD Moisture Barrier Thin Films
288Innovative remote plasma source for atomic layer deposition for GaN devices
289Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
290Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
291Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
292Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
293Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
294Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
295Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
296Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
297Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
298Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
299Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
300Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
301Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
302Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
303Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
304Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
305Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
306Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
307Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
308Charge effects of ultrafine FET with nanodot type floating gate
309Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
310Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
311A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
312Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
313Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
314Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
315Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
316Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
317Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
318Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
319Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
320Radical Enhanced Atomic Layer Deposition of Metals and Oxides
321Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
322Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
323Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
324Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
325Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
326Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
327Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
328Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
329MANOS performance dependence on ALD Al2O3 oxidation source
330Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
331Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
332Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
333Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
334Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
335Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
336Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
337A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
338The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
339On the equilibrium concentration of boron-oxygen defects in crystalline silicon
340Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
341Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
342High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
343A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer
344Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
345Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
346Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
347Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
348Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
349Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
350Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
351Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
352Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
353Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
354Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
355Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
356Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
357Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
358A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
359Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
360Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
361Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
362Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
363Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
364Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
365Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
366Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
367Tribological properties of thin films made by atomic layer deposition sliding against silicon
368Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
369Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
370Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
371Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
372Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
373Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
374Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
375Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
376Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
377Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
378Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
379High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
380Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
381Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
382Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
383Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
384A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
385Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
386Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
387Low-Power Double-Gate ZnO TFT Active Rectifier
388Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
389Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
390Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma
391Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
392Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
393Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
394PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
395Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
396Improved understanding of recombination at the Si/Al2O3 interface
397Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
398Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
399Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
400Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
401Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
402Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
403Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
404Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
405Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
406Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
407Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
408Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
409Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
410Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
411Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
412Flexible, light trapping substrates for organic photovoltaics
413Propagation Effects in Carbon Nanoelectronics
414Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
415Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
416Protective capping and surface passivation of III-V nanowires by atomic layer deposition
417Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
418Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
419Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
420Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
421Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
422Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
423Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
424Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
425Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
426Patterned deposition by plasma enhanced spatial atomic layer deposition
427Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
428Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
429Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
430Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
431Perspectives on future directions in III-N semiconductor research
432Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
433Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
434Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
435ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
436Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition
437Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
438Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources
439Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
440Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth
441AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
442Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
443Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
444Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
445Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
446Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
447A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
448Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
449Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
450Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
451Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
452AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
453Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
454Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
455Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
456An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
457Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
458Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
459Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
460Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
461Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
462Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
463Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
464Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
465Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
466ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
467Study on the characteristics of aluminum thin films prepared by atomic layer deposition
468Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
469Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
470Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
471Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
472Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
473Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
474Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
475Densification of Thin Aluminum Oxide Films by Thermal Treatments
476Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
477Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition
478Very high frequency plasma reactant for atomic layer deposition
479Optimization of the Surface Structure on Black Silicon for Surface Passivation
480The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
481Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
482Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
483In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
484Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
485Single-Cell Photonic Nanocavity Probes
486Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
487Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition
488Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
489Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
490Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
491Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
492Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
493Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
494Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
495Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
496DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
497823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
498MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
499Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
500Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
501Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
502Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
503Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
504Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
505Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
506Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
507Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
508High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
509Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
510In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
511Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
512High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
513Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
514Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
515Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
516Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
517Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
518Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
519Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
520Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
521Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
522Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
523Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
524XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
525Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
526Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
527Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
528Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
529Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
530Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
531Nitride memristors
532Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
533A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
534Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
535First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
536Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
537Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
538Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
539Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
540Band alignment of Al2O3 with (-201) β-Ga2O3
541Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
542Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
543Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
544Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
545Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
546Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
547N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
548Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
549Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
550RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
551Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
552Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
553Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
554Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
555Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
556Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
557Experimental verification of electro-refractive phase modulation in graphene
558Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
559Nitride passivation of the interface between high-k dielectrics and SiGe
560Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
561Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
562Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
563Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
564Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
565A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
566Lithium-Iron (III) Fluoride Battery with Double Surface Protection
567Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
568Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
569Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
570AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
571Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
572Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
573Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
574Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
575Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
576Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
577Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
578Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
579Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
580AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
581Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
582Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
583Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
584Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
585Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing