TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Trimethylaluminum, min. 98% (Material sold in non-returnable cylinder)
2Strem Chemicals, Inc.Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
3Strem Chemicals, Inc.Trimethylaluminum, min. 98%, contained in high-temp 50 ml cylinder for CVD/ALD
4Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al)
5Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
6Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
7American ElementsTrimethylaluminum

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 490 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
2Radical Enhanced Atomic Layer Deposition of Metals and Oxides
3Study on the characteristics of aluminum thin films prepared by atomic layer deposition
4Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
5Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
6Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
7Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
8Encapsulation method for atom probe tomography analysis of nanoparticles
9Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
10'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
111D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
1246-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
13A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
14A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
15A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
16A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
17A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
18A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
19AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
20Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
21Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
22Advances in the fabrication of graphene transistors on flexible substrates
23Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
24Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
25Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
26Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
27Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
28ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
29AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
30AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
31AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
32AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
33AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
34Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
35Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
36Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
37An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
38Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
39Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
40Anti-stiction coating for mechanically tunable photonic crystal devices
41Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
42Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
43Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
44Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
45Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
46Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
47Atomic layer deposition of metal-oxide thin films on cellulose fibers
48Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
49Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
50AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
51Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
52Band alignment of Al2O3 with (-201) β-Ga2O3
53Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
54Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
55Breakdown and Protection of ALD Moisture Barrier Thin Films
56Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
57Capacitance spectroscopy of gate-defined electronic lattices
58Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
59Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
60Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
61Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
62Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
63Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
64Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
65Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
66Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
67Charge effects of ultrafine FET with nanodot type floating gate
68Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
69Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
70Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
71Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
72Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
73Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
74Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
75Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
76Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
77Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
78Damage evaluation in graphene underlying atomic layer deposition dielectrics
79DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
80Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
81Demonstration of flexible thin film transistors with GaN channels
82Densification of Thin Aluminum Oxide Films by Thermal Treatments
83Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
84Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
85Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
86DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
87Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
88Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
89Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
90Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
91Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
92Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
93Dynamic tuning of plasmon resonance in the visible using graphene
94Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
95Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
96Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
97Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
98Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
99Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
100Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
101Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
102Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
103Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
104Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
105Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
106Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
107Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
108Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
109Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
110Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
111Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
112Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
113Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
114Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
115Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
116Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
117Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
118Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
119Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
120Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
121Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
122Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
123Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
124Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
125Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
126Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
127Energy-enhanced atomic layer deposition for more process and precursor versatility
128Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
129Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
130Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
131Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
132Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
133Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
134Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
135Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
136Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
137Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
138Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
139Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
140Experimental verification of electro-refractive phase modulation in graphene
141Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
142Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
143Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
144Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
145Fast Flexible Plastic Substrate ZnO Circuits
146Fast PEALD ZnO Thin-Film Transistor Circuits
147Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
148Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
149Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
150Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
151Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
152Flexible, light trapping substrates for organic photovoltaics
153Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
154Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
155Gate Insulator for High Mobility Oxide TFT
156Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
157Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
158Hafnia and alumina on sulphur passivated germanium
159High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
160High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
161High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
162High-efficiency embedded transmission grating
163High-Reflective Coatings For Ground and Space Based Applications
164Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
165Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
166Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
167Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
168Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
169Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
170Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
171Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
172Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
173Improved understanding of recombination at the Si/Al2O3 interface
174Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
175Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
176Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
177Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
178Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
179Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
180In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
181In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
182In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
183Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
184Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
185Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
186Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
187Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
188Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
189Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
190Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
191Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
192Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
193Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
194Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
195Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
196Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
197Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
198Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
199Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
200Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
201Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
202Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
203Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
204Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
205Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
206Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
207Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
208Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
209Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
210Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
211Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
212Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
213Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
214Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
215Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
216Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
217Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
218Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
219Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
220Low-Power Double-Gate ZnO TFT Active Rectifier
221Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
222Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
223Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
224Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
225MANOS performance dependence on ALD Al2O3 oxidation source
226Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
227Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
228Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
229Method of Fabrication for Encapsulated Polarizing Resonant Gratings
230Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
231Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
232Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
233Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
234Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
235Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
236Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
237N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
238Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
239Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
240Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
241Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
242Nitride passivation of the interface between high-k dielectrics and SiGe
243Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
244Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
245Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
246Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
247On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
248On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
249On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
250On the equilibrium concentration of boron-oxygen defects in crystalline silicon
251On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
252Optical display film as flexible and light trapping substrate for organic photovoltaics
253Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
254Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
255Optimization of the Surface Structure on Black Silicon for Surface Passivation
256Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
257Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
258Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
259Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
260Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
261Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
262Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
263Passivation effects of atomic-layer-deposited aluminum oxide
264Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
265Patterned deposition by plasma enhanced spatial atomic layer deposition
266PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
267Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
268Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
269Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
270Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
271Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
272Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
273Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
274Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
275Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
276Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
277Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
278Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
279Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
280Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
281Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
282Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
283Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
284Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
285Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
286Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
287Propagation Effects in Carbon Nanoelectronics
288Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
289Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
290Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
291Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
292Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
293Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
294Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
295Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
296Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
297RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
298Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
299Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
300Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
301Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
302Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
303Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
304Single-Cell Photonic Nanocavity Probes
305Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
306Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
307Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
308Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
309Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
310Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
311Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
312Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
313Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
314Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
315Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
316Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
317Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
318Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
319Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
320Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
321Symmetrical Al2O3-based passivation layers for p- and n-type silicon
322Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
323Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
324Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
325The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
326The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
327The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
328Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
329Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
330Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
331Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
332TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
333Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
334Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
335Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
336Trapped charge densities in Al2O3-based silicon surface passivation layers
337Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
338Tribological properties of thin films made by atomic layer deposition sliding against silicon
339Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
340Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
341Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
342Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
343Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
344Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
345Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
346Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
347Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
348Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
349Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
350Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
351Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
352Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
353Very high frequency plasma reactant for atomic layer deposition
354Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
355Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
356Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
357Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
358Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
359Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
360Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
361Atomic layer epitaxy for quantum well nitride-based devices
362Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
363Perspectives on future directions in III-N semiconductor research
364Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
365823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
366A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
367ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
368AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
369AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
370Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
371Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
372Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
373Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
374Atomic layer epitaxy for quantum well nitride-based devices
375Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
376Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
377Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
378Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
379Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
380Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
381Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
382Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
383Crystalline growth of AlN thin films by atomic layer deposition
384Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
385Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
386Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
387Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
388Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
389Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
390Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
391Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
392GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
393GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
394Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
395Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
396Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
397Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
398Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
399Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
400High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
401High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
402High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
403Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
404Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
405Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
406Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
407Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
408Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
409Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
410Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
411Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
412Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
413Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
414Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
415Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
416New materials for memristive switching
417Nitride memristors
418Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
419Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
420Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
421PEALD AlN: controlling growth and film crystallinity
422PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
423Perspectives on future directions in III-N semiconductor research
424Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
425Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
426Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
427Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
428Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
429Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
430Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
431Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
432Properties of AlN grown by plasma enhanced atomic layer deposition
433Radical Enhanced Atomic Layer Deposition of Metals and Oxides
434Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
435Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
436Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
437Silicon surface passivation with atomic layer deposited aluminum nitride
438Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
439Structural and optical characterization of low-temperature ALD crystalline AlN
440Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
441Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
442Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
443Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
444The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
445The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
446Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
447Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
448TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
449XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
450Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
451Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
452Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
453Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
454Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
455Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
456Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
457Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
458Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
459Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
460Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
461Plasma enhanced atomic layer deposition of aluminum sulfide thin films
462Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
463Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
464Composite materials and nanoporous thin layers made by atomic layer deposition
465Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
466Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
467Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
468Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
469Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
470Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
471Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
472Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
473Optical and Electrical Properties of AlxTi1-xO Films
474Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
475Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
476Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
477Breakdown and Protection of ALD Moisture Barrier Thin Films
478Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
479A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
480Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
481Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
482The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
483Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
484Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
485Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
486Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
487Tribological properties of thin films made by atomic layer deposition sliding against silicon
488Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
489Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
490Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition


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