TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorRegionLink
1Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum 97%
2Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
3Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in high-temp cylinder
4EpiValence🇬🇧Aluminium trimethyl
5Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
6Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
7Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98% (Material sold in non-returnable cylinder)
8Pegasus Chemicals🇬🇧Trimethylaluminium
9Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum packaged for use in deposition systems
10Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al) PURATREM
11American Elements🇺🇸Trimethylaluminum
12DOCK/CHEMICALS🇩🇪Trimethylaluminum

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 609 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
2Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources
3Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
4Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
5Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
61D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
7Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
8Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
9A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
10Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
11Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
12AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
13Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
14Protective capping and surface passivation of III-V nanowires by atomic layer deposition
15Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
16Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
17Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
18Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
19Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
20Single-Cell Photonic Nanocavity Probes
21TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
22Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
23Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
24Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
25Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
26Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
27Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
28Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
29Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
30Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
31Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
32TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
33Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
34Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
35Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
36Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
37Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
38Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
39Flexible, light trapping substrates for organic photovoltaics
40Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
41Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
42Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
43Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
44Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
45Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
46Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
47Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
48Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
49Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
50Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
51Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
52Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
53Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
54Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
55Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
56Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
57Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
58Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
59Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
60Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
61Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
62Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
63Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
64Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
65Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
66Patterned deposition by plasma enhanced spatial atomic layer deposition
67Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
68Crystalline growth of AlN thin films by atomic layer deposition
69Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
70Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
71Study on the characteristics of aluminum thin films prepared by atomic layer deposition
72Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
73Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
74Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
75A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
76Nitride passivation of the interface between high-k dielectrics and SiGe
77Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films
78Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
79Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
80Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
81Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
82Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
83Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
84Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
85Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
86PEALD AlN: controlling growth and film crystallinity
87Energy-enhanced atomic layer deposition for more process and precursor versatility
88Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
89Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
90A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
91Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
92AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
93Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
94Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
95Structural and optical characterization of low-temperature ALD crystalline AlN
96Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
97Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
98Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
99Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
100Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
101Hafnia and alumina on sulphur passivated germanium
102Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
103Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
104Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
105Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
106Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
107Optical and Electrical Properties of AlxTi1-xO Films
108Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
109Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
110Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
111Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
112Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
113Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
114Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
115Impact of interface materials on side permeation in indirect encapsulation of organic electronics
116Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
117Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
118Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
119Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
120Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
121Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
122Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
123In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
124Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
125Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
126A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
127Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
128Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
129Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
130Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
131Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
132Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
133Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
134Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
135Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
136Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
137Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
138The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
139Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
140Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
141Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
142Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers
143Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
144Innovative remote plasma source for atomic layer deposition for GaN devices
145Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
146Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
147Tuning size and coverage of Pd nanoparticles using atomic layer deposition
148Atomic layer epitaxy for quantum well nitride-based devices
149Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
150Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
151Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
152Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
153Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
154Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
155Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
156Radical Enhanced Atomic Layer Deposition of Metals and Oxides
157Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
158Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
159Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
160Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
161Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
162The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
163Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition
164Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
165Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
166Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
167Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
168Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
169Fast PEALD ZnO Thin-Film Transistor Circuits
170Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
171Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
172Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
173Gate Insulator for High Mobility Oxide TFT
174On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
175Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
176Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
177Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
178A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
179Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
180Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
181Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
182Passivation effects of atomic-layer-deposited aluminum oxide
183A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
184Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
185Optical in situ monitoring of plasma-enhanced atomic layer deposition process
186Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
187Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
188Perspectives on future directions in III-N semiconductor research
189Plasma enhanced atomic layer deposition of aluminum sulfide thin films
190Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
191Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
192Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
193Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
194Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
195Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
196ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
197Capacitance spectroscopy of gate-defined electronic lattices
198Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
199Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
200Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
201Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
202Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
203Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
204Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
205In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
206High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
207The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
208Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
209Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition
210Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
211'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
212Symmetrical Al2O3-based passivation layers for p- and n-type silicon
213Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
214Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
215Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition
216Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
217Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma
218A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
219Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
220Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
221823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
222Mechanical properties of thin-film Parylene-metal-Parylene devices
223Tribological properties of thin films made by atomic layer deposition sliding against silicon
224Anti-stiction coating for mechanically tunable photonic crystal devices
225Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
226In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
227Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
228Atomic layer epitaxy for quantum well nitride-based devices
229Optical display film as flexible and light trapping substrate for organic photovoltaics
230AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
231Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
232Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
233Optimization of the Surface Structure on Black Silicon for Surface Passivation
234Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
235Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
236Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
237Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
238The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
239MANOS performance dependence on ALD Al2O3 oxidation source
240Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
241Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
242Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
243Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
244Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
245Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
246Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
247Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
248Residual stress study of thin films deposited by atomic layer deposition
249Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
250Properties of AlN grown by plasma enhanced atomic layer deposition
251Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
252Sub-nanometer heating depth of atomic layer annealing
253Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
254Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
255Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
256Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
257Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
258Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
259Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
260Experimental verification of electro-refractive phase modulation in graphene
261Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
262Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
263Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
264Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
265ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
266Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
267Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
268First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
269Silicon surface passivation with atomic layer deposited aluminum nitride
270Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
271Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
272GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
273Propagation Effects in Carbon Nanoelectronics
274Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
275Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
276Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
277A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
278Fast Flexible Plastic Substrate ZnO Circuits
279Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
280Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
281Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
282The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
283Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
284Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
285Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
286Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
287Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
288Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
289Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
290Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
291Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
292High-Reflective Coatings For Ground and Space Based Applications
293Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
294Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
295Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
296Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
297Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
298Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
299Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
300Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
301DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
302Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
303Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
304Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
305Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
306Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth
307Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
308Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
309Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
310AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
311Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
312Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
313Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
314Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
315Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
316Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
317Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
318Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
319Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
320Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
321On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
322High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
323Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
324Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
325Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
326Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
327Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
328Breakdown and Protection of ALD Moisture Barrier Thin Films
329Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
330Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
331Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
332Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
333Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
334A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
335Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
336High-efficiency embedded transmission grating
337Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
338Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
339Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
340Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
341Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
342Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
343Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
344Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
345Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
346Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
347Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
348PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
349Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
350Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
351On the equilibrium concentration of boron-oxygen defects in crystalline silicon
352On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
353Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
354Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
355Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
356Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
357New materials for memristive switching
358Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
359Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
360Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
361Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
362Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
363Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
364Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
365Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
366Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
367A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer
368Improved understanding of recombination at the Si/Al2O3 interface
369Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
370Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
371Method of Fabrication for Encapsulated Polarizing Resonant Gratings
372Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
373Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
374GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
375Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
376Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
377AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
378Trapped charge densities in Al2O3-based silicon surface passivation layers
379Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
380Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
381Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
382Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
383Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
384Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
385Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
386Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
387Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
388Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
389High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
390Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
391Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
39246-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
393Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
394Atomic layer deposition of metal-oxide thin films on cellulose fibers
395Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
396Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
397Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
398Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
399Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
400Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
401Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
402Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
403Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
404Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
405Breakdown and Protection of ALD Moisture Barrier Thin Films
406Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
407Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
408Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
409Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
410Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
411Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
412Band alignment of Al2O3 with (-201) β-Ga2O3
413Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
414Advances in the fabrication of graphene transistors on flexible substrates
415Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
416Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition
417Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
418Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
419Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
420Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
421Radical Enhanced Atomic Layer Deposition of Metals and Oxides
422PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
423Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
424Protective capping and surface passivation of III-V nanowires by atomic layer deposition
425Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy
426Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
427Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
428Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
429Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
430AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
431Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
432The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
433Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
434Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
435Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
436Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
437Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
438Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
439Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
440Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
441Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
442Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
443AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
444Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
445Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
446Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
447Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
448Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
449Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
450Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
451Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
452Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
453High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
454DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
455Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
456Composite materials and nanoporous thin layers made by atomic layer deposition
457Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
458Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
459Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
460A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
461Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
462Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
463N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
464Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
465Dynamic tuning of plasmon resonance in the visible using graphene
466Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
467Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
468Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
469Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
470Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
471The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
472Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
473Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
474Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
475Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
476MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
477Densification of Thin Aluminum Oxide Films by Thermal Treatments
478Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
479Damage evaluation in graphene underlying atomic layer deposition dielectrics
480Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
481Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
482Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
483AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
484On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
485Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
486Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
487Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
488Lithium-Iron (III) Fluoride Battery with Double Surface Protection
489Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
490High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
491Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
492Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
493Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
494Low-Power Double-Gate ZnO TFT Active Rectifier
495Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
496Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
497Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
498Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
499AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
500Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
501Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
502Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
503Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
504Perspectives on future directions in III-N semiconductor research
505Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
506Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
507Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
508Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
509Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
510Tribological properties of thin films made by atomic layer deposition sliding against silicon
511Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
512Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
513Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
514Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
515Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
516Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
517RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
518Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
519Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
520Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
521Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
522Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
523Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
524Charge effects of ultrafine FET with nanodot type floating gate
525Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
526Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
527Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
528Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
529Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
530Very high frequency plasma reactant for atomic layer deposition
531Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
532Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition
533Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
534AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
535Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
536Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
537Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition
538Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
539Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
540XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
541Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
542Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
543Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
544Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors
545Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
546Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
547Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
548Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
549Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
550On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
551Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
552Encapsulation method for atom probe tomography analysis of nanoparticles
553Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
554Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
555Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
556In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
557Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
558Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
559High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
560Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
561Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
562Nitride memristors
563Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
564Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
565Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
566Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
567High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
568An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
569Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
570Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
571Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
572Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
573Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
574Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
575Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
576Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
577Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
578Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
579AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
580Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
581Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
582Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
583Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
584Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
585In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition
586Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
587Fiber-matrix interface reinforcement using Atomic Layer Deposition
588Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
589Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
590Using top graphene layer as sacrificial protection during dielectric atomic layer deposition