TMA, AlMe3, Trimethyl Aluminum, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
2Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
3Strem Chemicals, Inc.Trimethylaluminum, min. 98%, contained in high-temp 50 ml cylinder for CVD/ALD
4Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
5Strem Chemicals, Inc.Trimethylaluminum, min. 98% (Material sold in non-returnable cylinder)
6Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al)

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 507 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
2Radical Enhanced Atomic Layer Deposition of Metals and Oxides
3Study on the characteristics of aluminum thin films prepared by atomic layer deposition
4Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
5Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
6Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
7Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
8Encapsulation method for atom probe tomography analysis of nanoparticles
9Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
10'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
111D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
1246-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
13A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
14A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
15A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
16A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
17A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
18A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
19AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
20Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
21Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
22Advances in the fabrication of graphene transistors on flexible substrates
23Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
24Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
25Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
26Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
27Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
28ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
29AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
30AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
31AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
32AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
33AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
34Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
35Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
36Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
37An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
38Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
39Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
40Anti-stiction coating for mechanically tunable photonic crystal devices
41Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
42Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
43Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
44Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
45Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
46Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
47Atomic layer deposition of metal-oxide thin films on cellulose fibers
48Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
49Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
50AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
51Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
52Band alignment of Al2O3 with (-201) β-Ga2O3
53Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
54Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
55Breakdown and Protection of ALD Moisture Barrier Thin Films
56Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
57Capacitance spectroscopy of gate-defined electronic lattices
58Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
59Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
60Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
61Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
62Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
63Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
64Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
65Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
66Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
67Charge effects of ultrafine FET with nanodot type floating gate
68Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
69Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
70Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
71Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
72Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
73Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
74Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
75Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
76Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
77Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
78Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
79Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
80Damage evaluation in graphene underlying atomic layer deposition dielectrics
81DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
82Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
83Demonstration of flexible thin film transistors with GaN channels
84Densification of Thin Aluminum Oxide Films by Thermal Treatments
85Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
86Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
87Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
88DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
89Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
90Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
91Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
92Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
93Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
94Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
95Dynamic tuning of plasmon resonance in the visible using graphene
96Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
97Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
98Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
99Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
100Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
101Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
102Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
103Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
104Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
105Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
106Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
107Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
108Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
109Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
110Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
111Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
112Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
113Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
114Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
115Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
116Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
117Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
118Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
119Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
120Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
121Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
122Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
123Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
124Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
125Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
126Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
127Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
128Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
129Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
130Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
131Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
132Energy-enhanced atomic layer deposition for more process and precursor versatility
133Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
134Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
135Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
136Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
137Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
138Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
139Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
140Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
141Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
142Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
143Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
144Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
145Experimental verification of electro-refractive phase modulation in graphene
146Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
147Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
148Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
149Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
150Fast Flexible Plastic Substrate ZnO Circuits
151Fast PEALD ZnO Thin-Film Transistor Circuits
152Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
153Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
154Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
155Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
156Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
157First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
158Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
159Flexible, light trapping substrates for organic photovoltaics
160Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
161Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
162Gate Insulator for High Mobility Oxide TFT
163Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
164Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
165Hafnia and alumina on sulphur passivated germanium
166High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
167High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
168High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
169High-efficiency embedded transmission grating
170High-Reflective Coatings For Ground and Space Based Applications
171High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
172Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
173Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
174Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
175Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
176Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
177Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
178Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
179Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
180Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
181Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
182Improved understanding of recombination at the Si/Al2O3 interface
183Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
184Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
185Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
186Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
187Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
188Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
189In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
190In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
191In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
192In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
193Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
194Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
195Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
196Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
197Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
198Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
199Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
200Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
201Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
202Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
203Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
204Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
205Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
206Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
207Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
208Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
209Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
210Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
211Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
212Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
213Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
214Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
215Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
216Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
217Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
218Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
219Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
220Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
221Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
222Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
223Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
224Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
225Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
226Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
227Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
228Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
229Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
230Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
231Low-Power Double-Gate ZnO TFT Active Rectifier
232Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
233Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
234Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
235Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
236MANOS performance dependence on ALD Al2O3 oxidation source
237Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
238Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
239Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
240Method of Fabrication for Encapsulated Polarizing Resonant Gratings
241Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
242Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
243Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
244Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
245Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
246Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
247Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
248Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
249N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
250Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
251Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
252Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
253Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
254Nitride passivation of the interface between high-k dielectrics and SiGe
255Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
256Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
257Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
258Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
259On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
260On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
261On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
262On the equilibrium concentration of boron-oxygen defects in crystalline silicon
263On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
264Optical display film as flexible and light trapping substrate for organic photovoltaics
265Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
266Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
267Optimization of the Surface Structure on Black Silicon for Surface Passivation
268Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
269Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
270Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
271Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
272Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
273Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
274Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
275Passivation effects of atomic-layer-deposited aluminum oxide
276Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
277Patterned deposition by plasma enhanced spatial atomic layer deposition
278PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
279Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
280Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
281Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
282Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
283Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
284Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
285Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
286Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
287Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
288Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
289Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
290Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
291Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
292Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
293Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
294Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
295Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
296Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
297Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
298Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
299Propagation Effects in Carbon Nanoelectronics
300Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
301Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
302Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
303Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
304Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
305Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
306Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
307Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
308Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
309RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
310Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
311Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
312Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
313Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
314Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
315Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
316Single-Cell Photonic Nanocavity Probes
317Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
318Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
319Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
320Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
321Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
322Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
323Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
324Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
325Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
326Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
327Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
328Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
329Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
330Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
331Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
332Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
333Symmetrical Al2O3-based passivation layers for p- and n-type silicon
334Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
335Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
336Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
337The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
338The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
339The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
340Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
341Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
342Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
343Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
344TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
345Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
346Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
347Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
348Trapped charge densities in Al2O3-based silicon surface passivation layers
349Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
350Tribological properties of thin films made by atomic layer deposition sliding against silicon
351Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
352Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
353Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
354Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
355Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
356Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
357Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
358Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
359Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
360Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
361Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
362Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
363Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
364Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
365Very high frequency plasma reactant for atomic layer deposition
366Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
367Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
368Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
369Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
370Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
371Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
372Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
373Atomic layer epitaxy for quantum well nitride-based devices
374Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
375Perspectives on future directions in III-N semiconductor research
376Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
377823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
378A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
379ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
380AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
381AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
382Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
383Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
384Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
385Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
386Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
387Atomic layer epitaxy for quantum well nitride-based devices
388Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
389Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
390Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
391Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
392Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
393Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
394Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
395Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
396Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
397Crystalline growth of AlN thin films by atomic layer deposition
398Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
399Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
400Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
401Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
402Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
403Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
404Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
405Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
406Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
407GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
408GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
409Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
410Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
411Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
412Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
413Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
414Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
415High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
416High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
417High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
418Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
419Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
420Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
421Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
422Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
423Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
424Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
425Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
426Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
427Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
428Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
429Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
430Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
431New materials for memristive switching
432Nitride memristors
433Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
434Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
435Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
436PEALD AlN: controlling growth and film crystallinity
437PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
438Perspectives on future directions in III-N semiconductor research
439Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
440Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
441Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
442Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
443Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
444Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
445Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
446Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
447Properties of AlN grown by plasma enhanced atomic layer deposition
448Radical Enhanced Atomic Layer Deposition of Metals and Oxides
449Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow-cathode plasma-assisted atomic layer deposition
450Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
451Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
452Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
453Silicon surface passivation with atomic layer deposited aluminum nitride
454Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
455Structural and optical characterization of low-temperature ALD crystalline AlN
456Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
457Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
458Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
459Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
460The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
461The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
462Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
463Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
464TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
465XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
466Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
467Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
468Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
469Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
470Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
471Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
472Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
473Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
474Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
475Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
476Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
477Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
478Plasma enhanced atomic layer deposition of aluminum sulfide thin films
479Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
480Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
481Composite materials and nanoporous thin layers made by atomic layer deposition
482Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
483Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
484Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
485Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
486Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
487Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
488Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
489Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
490Optical and Electrical Properties of AlxTi1-xO Films
491Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
492Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
493Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
494Breakdown and Protection of ALD Moisture Barrier Thin Films
495Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
496A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
497Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
498Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
499The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
500Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
501Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
502Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
503Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
504Tribological properties of thin films made by atomic layer deposition sliding against silicon
505Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
506Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
507Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition


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