TMA, AlMe₃, Trimethyl Aluminum, CAS# 75-24-1

Informational Websites

Number	Website
1	https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

Number	Vendor	Link
1	Strem Chemicals, Inc.	Trimethylaluminum, min. 98% (Material sold in non-returnable cylinder)
2	Strem Chemicals, Inc.	Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
3	Strem Chemicals, Inc.	Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
4	Strem Chemicals, Inc.	Trimethylaluminum, elec. gr. (99.999+%-Al)
5	Strem Chemicals, Inc.	Trimethylaluminum, min. 98%, contained in high-temp 50 ml cylinder for CVD/ALD
6	Strem Chemicals, Inc.	Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 521 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
2	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
3	Study on the characteristics of aluminum thin films prepared by atomic layer deposition
4	Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
5	Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
6	Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
7	Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
8	Encapsulation method for atom probe tomography analysis of nanoparticles
9	Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
10	'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
11	1D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
12	46-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
13	A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
14	A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
15	A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
16	A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
17	A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
18	A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
19	AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
20	Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
21	Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
22	Advances in the fabrication of graphene transistors on flexible substrates
23	Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
24	Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
25	Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
26	Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
27	Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
28	ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
29	AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
30	AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
31	AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
32	AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
33	AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
34	Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
35	Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
36	Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
37	An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
38	Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
39	Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
40	Anti-stiction coating for mechanically tunable photonic crystal devices
41	Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
42	Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
43	Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
44	Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
45	Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
46	Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
47	Atomic layer deposition of metal-oxide thin films on cellulose fibers
48	Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
49	Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
50	Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
51	AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
52	Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
53	Band alignment of Al2O3 with (-201) β-Ga2O3
54	Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
55	Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
56	Breakdown and Protection of ALD Moisture Barrier Thin Films
57	Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
58	Capacitance spectroscopy of gate-defined electronic lattices
59	Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
60	Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
61	Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
62	Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
63	Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
64	Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
65	Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
66	Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
67	Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
68	Charge effects of ultrafine FET with nanodot type floating gate
69	Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
70	Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
71	Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
72	Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
73	Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
74	Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
75	Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
76	Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
77	Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
78	Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
79	Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
80	Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
81	Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
82	Damage evaluation in graphene underlying atomic layer deposition dielectrics
83	DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
84	Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
85	Densification of Thin Aluminum Oxide Films by Thermal Treatments
86	Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
87	Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
88	Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
89	DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
90	Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
91	Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
92	Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
93	Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
94	Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
95	Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
96	Dynamic tuning of plasmon resonance in the visible using graphene
97	Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
98	Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
99	Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
100	Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
101	Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
102	Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
103	Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
104	Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
105	Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
106	Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
107	Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
108	Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
109	Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
110	Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
111	Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
112	Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
113	Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
114	Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
115	Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
116	Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
117	Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
118	Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
119	Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
120	Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
121	Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
122	Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
123	Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
124	Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
125	Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
126	Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
127	Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
128	Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
129	Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
130	Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
131	Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
132	Energy-enhanced atomic layer deposition for more process and precursor versatility
133	Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
134	Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
135	Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
136	Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
137	Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
138	Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
139	Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
140	Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
141	Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
142	Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
143	Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
144	Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
145	Experimental verification of electro-refractive phase modulation in graphene
146	Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
147	Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
148	Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
149	Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
150	Fast Flexible Plastic Substrate ZnO Circuits
151	Fast PEALD ZnO Thin-Film Transistor Circuits
152	Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
153	Fiber-matrix interface reinforcement using Atomic Layer Deposition
154	Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
155	Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
156	Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
157	Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
158	First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
159	Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
160	Flexible, light trapping substrates for organic photovoltaics
161	Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
162	Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
163	Gate Insulator for High Mobility Oxide TFT
164	Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
165	Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
166	Hafnia and alumina on sulphur passivated germanium
167	High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
168	High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
169	High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
170	High-efficiency embedded transmission grating
171	High-Reflective Coatings For Ground and Space Based Applications
172	High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
173	Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
174	Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
175	Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
176	Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
177	Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
178	Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
179	Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
180	Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
181	Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
182	Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
183	Improved understanding of recombination at the Si/Al2O3 interface
184	Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
185	Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
186	Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
187	Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
188	Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
189	Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
190	In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
191	In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
192	In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
193	In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
194	Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
195	Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
196	Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
197	Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
198	Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
199	Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
200	Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
201	Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
202	Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
203	Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
204	Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
205	Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
206	Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
207	Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
208	Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
209	Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
210	Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
211	Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
212	Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
213	Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
214	Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
215	Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
216	Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
217	Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
218	Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
219	Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
220	Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
221	Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
222	Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
223	Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
224	Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
225	Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
226	Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
227	Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
228	Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
229	Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
230	Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
231	Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
232	Low-Power Double-Gate ZnO TFT Active Rectifier
233	Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
234	Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
235	Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
236	Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
237	MANOS performance dependence on ALD Al2O3 oxidation source
238	Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
239	Mechanical properties of thin-film Parylene-metal-Parylene devices
240	Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
241	Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
242	Method of Fabrication for Encapsulated Polarizing Resonant Gratings
243	Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
244	Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
245	Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
246	Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
247	Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
248	Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
249	Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
250	Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
251	N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
252	Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
253	Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
254	Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
255	Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
256	Nitride passivation of the interface between high-k dielectrics and SiGe
257	Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
258	Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
259	Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
260	Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
261	On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
262	On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
263	On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
264	On the equilibrium concentration of boron-oxygen defects in crystalline silicon
265	On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
266	Optical display film as flexible and light trapping substrate for organic photovoltaics
267	Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
268	Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
269	Optimization of the Surface Structure on Black Silicon for Surface Passivation
270	Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
271	Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
272	Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
273	Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
274	Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
275	Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
276	Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
277	Passivation effects of atomic-layer-deposited aluminum oxide
278	Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
279	Patterned deposition by plasma enhanced spatial atomic layer deposition
280	PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
281	Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
282	Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
283	Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
284	Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
285	Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
286	Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
287	Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
288	Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
289	Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
290	Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
291	Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
292	Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
293	Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
294	Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
295	Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
296	Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
297	Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
298	Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
299	Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
300	Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
301	Propagation Effects in Carbon Nanoelectronics
302	Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
303	Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
304	Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
305	Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
306	Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
307	Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
308	Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
309	Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
310	Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
311	RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
312	Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
313	Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
314	Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
315	Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
316	Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
317	Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
318	Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
319	Single-Cell Photonic Nanocavity Probes
320	Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
321	Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
322	Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
323	Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
324	Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
325	Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
326	Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
327	Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
328	Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
329	Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
330	Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
331	Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
332	Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
333	Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
334	Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
335	Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
336	Symmetrical Al2O3-based passivation layers for p- and n-type silicon
337	Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
338	Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
339	Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
340	The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
341	The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
342	The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
343	Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
344	Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
345	Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
346	Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
347	TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
348	Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
349	Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
350	Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
351	Trapped charge densities in Al2O3-based silicon surface passivation layers
352	Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
353	Tribological properties of thin films made by atomic layer deposition sliding against silicon
354	Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
355	Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
356	Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
357	Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
358	Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
359	Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
360	Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
361	Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
362	Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
363	Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
364	Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
365	Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
366	Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
367	Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
368	Very high frequency plasma reactant for atomic layer deposition
369	Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
370	Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
371	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
372	Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
373	Atomic layer epitaxy for quantum well nitride-based devices
374	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
375	Perspectives on future directions in III-N semiconductor research
376	Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
377	823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
378	A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
379	ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
380	AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
381	AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
382	Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
383	Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
384	Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
385	Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
386	Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
387	Atomic layer epitaxy for quantum well nitride-based devices
388	Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
389	Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
390	Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
391	Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
392	Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
393	Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
394	Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
395	Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
396	Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
397	Crystalline growth of AlN thin films by atomic layer deposition
398	Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
399	Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
400	Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
401	Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
402	Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
403	Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
404	Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
405	Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
406	Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
407	GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
408	GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
409	Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
410	Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
411	Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
412	Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
413	Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
414	Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
415	High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
416	High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
417	High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
418	Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
419	Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
420	Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
421	Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
422	Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
423	Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
424	Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
425	Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
426	Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
427	Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
428	New materials for memristive switching
429	Nitride memristors
430	Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
431	Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
432	PEALD AlN: controlling growth and film crystallinity
433	PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
434	Perspectives on future directions in III-N semiconductor research
435	Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
436	Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
437	Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
438	Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
439	Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
440	Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
441	Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
442	Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
443	Properties of AlN grown by plasma enhanced atomic layer deposition
444	Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
445	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
446	Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
447	Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
448	Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
449	Silicon surface passivation with atomic layer deposited aluminum nitride
450	Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
451	Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
452	Structural and optical characterization of low-temperature ALD crystalline AlN
453	Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
454	Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
455	Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
456	Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
457	The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
458	The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
459	Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
460	Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
461	TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
462	XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
463	Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
464	Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
465	Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
466	Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
467	Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
468	Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
469	Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
470	Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
471	Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
472	Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
473	Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
474	Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
475	Plasma enhanced atomic layer deposition of aluminum sulfide thin films
476	Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
477	Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
478	Composite materials and nanoporous thin layers made by atomic layer deposition
479	Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
480	Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
481	Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
482	Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
483	Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
484	Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
485	Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
486	Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
487	Optical and Electrical Properties of AlxTi1-xO Films
488	Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
489	Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
490	Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
491	Breakdown and Protection of ALD Moisture Barrier Thin Films
492	Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
493	A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
494	Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
495	Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
496	The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
497	Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
498	Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
499	Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
500	Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
501	Tribological properties of thin films made by atomic layer deposition sliding against silicon
502	Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
503	Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
504	Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition

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