TMA, AlMe3, Trimethyl Aluminum, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
2Strem Chemicals, Inc.Trimethylaluminum, min. 98% (Material sold in non-returnable cylinder)
3Strem Chemicals, Inc.Trimethylaluminum, min. 98%, contained in high-temp 50 ml cylinder for CVD/ALD
4Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al)
5Strem Chemicals, Inc.Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
6Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 502 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
2Radical Enhanced Atomic Layer Deposition of Metals and Oxides
3Study on the characteristics of aluminum thin films prepared by atomic layer deposition
4Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
5Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
6Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
7Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
8Encapsulation method for atom probe tomography analysis of nanoparticles
9Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
10'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
111D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
1246-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
13A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
14A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
15A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
16A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
17A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
18A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
19AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
20Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
21Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
22Advances in the fabrication of graphene transistors on flexible substrates
23Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
24Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
25Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
26Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
27Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
28ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
29AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
30AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
31AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
32AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
33AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
34Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
35Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
36Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
37An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
38Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
39Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
40Anti-stiction coating for mechanically tunable photonic crystal devices
41Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
42Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
43Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
44Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
45Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
46Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
47Atomic layer deposition of metal-oxide thin films on cellulose fibers
48Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
49Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
50AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
51Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
52Band alignment of Al2O3 with (-201) β-Ga2O3
53Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
54Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
55Breakdown and Protection of ALD Moisture Barrier Thin Films
56Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
57Capacitance spectroscopy of gate-defined electronic lattices
58Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
59Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
60Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
61Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
62Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
63Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
64Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
65Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
66Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
67Charge effects of ultrafine FET with nanodot type floating gate
68Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
69Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
70Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
71Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
72Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
73Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
74Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
75Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
76Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
77Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
78Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
79Damage evaluation in graphene underlying atomic layer deposition dielectrics
80DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
81Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
82Demonstration of flexible thin film transistors with GaN channels
83Densification of Thin Aluminum Oxide Films by Thermal Treatments
84Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
85Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
86Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
87DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
88Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
89Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
90Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
91Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
92Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
93Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
94Dynamic tuning of plasmon resonance in the visible using graphene
95Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
96Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
97Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
98Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
99Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
100Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
101Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
102Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
103Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
104Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
105Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
106Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
107Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
108Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
109Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
110Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
111Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
112Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
113Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
114Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
115Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
116Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
117Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
118Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
119Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
120Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
121Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
122Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
123Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
124Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
125Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
126Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
127Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
128Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
129Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
130Energy-enhanced atomic layer deposition for more process and precursor versatility
131Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
132Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
133Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
134Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
135Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
136Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
137Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
138Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
139Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
140Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
141Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
142Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
143Experimental verification of electro-refractive phase modulation in graphene
144Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
145Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
146Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
147Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
148Fast Flexible Plastic Substrate ZnO Circuits
149Fast PEALD ZnO Thin-Film Transistor Circuits
150Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
151Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
152Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
153Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
154Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
155First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
156Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
157Flexible, light trapping substrates for organic photovoltaics
158Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
159Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
160Gate Insulator for High Mobility Oxide TFT
161Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
162Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
163Hafnia and alumina on sulphur passivated germanium
164High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
165High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
166High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
167High-efficiency embedded transmission grating
168High-Reflective Coatings For Ground and Space Based Applications
169High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
170Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
171Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
172Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
173Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
174Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
175Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
176Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
177Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
178Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
179Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
180Improved understanding of recombination at the Si/Al2O3 interface
181Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
182Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
183Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
184Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
185Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
186Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
187In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
188In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
189In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
190In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
191Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
192Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
193Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
194Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
195Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
196Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
197Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
198Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
199Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
200Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
201Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
202Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
203Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
204Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
205Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
206Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
207Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
208Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
209Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
210Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
211Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
212Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
213Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
214Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
215Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
216Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
217Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
218Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
219Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
220Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
221Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
222Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
223Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
224Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
225Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
226Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
227Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
228Low-Power Double-Gate ZnO TFT Active Rectifier
229Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
230Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
231Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
232Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
233MANOS performance dependence on ALD Al2O3 oxidation source
234Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
235Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
236Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
237Method of Fabrication for Encapsulated Polarizing Resonant Gratings
238Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
239Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
240Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
241Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
242Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
243Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
244Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
245N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
246Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
247Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
248Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
249Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
250Nitride passivation of the interface between high-k dielectrics and SiGe
251Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
252Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
253Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
254Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
255On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
256On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
257On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
258On the equilibrium concentration of boron-oxygen defects in crystalline silicon
259On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
260Optical display film as flexible and light trapping substrate for organic photovoltaics
261Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
262Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
263Optimization of the Surface Structure on Black Silicon for Surface Passivation
264Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
265Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
266Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
267Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
268Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
269Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
270Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
271Passivation effects of atomic-layer-deposited aluminum oxide
272Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
273Patterned deposition by plasma enhanced spatial atomic layer deposition
274PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
275Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
276Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
277Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
278Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
279Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
280Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
281Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
282Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
283Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
284Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
285Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
286Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
287Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
288Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
289Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
290Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
291Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
292Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
293Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
294Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
295Propagation Effects in Carbon Nanoelectronics
296Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
297Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
298Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
299Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
300Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
301Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
302Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
303Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
304Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
305RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
306Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
307Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
308Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
309Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
310Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
311Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
312Single-Cell Photonic Nanocavity Probes
313Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
314Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
315Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
316Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
317Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
318Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
319Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
320Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
321Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
322Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
323Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
324Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
325Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
326Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
327Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
328Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
329Symmetrical Al2O3-based passivation layers for p- and n-type silicon
330Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
331Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
332Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
333The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
334The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
335The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
336Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
337Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
338Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
339Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
340TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
341Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
342Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
343Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
344Trapped charge densities in Al2O3-based silicon surface passivation layers
345Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
346Tribological properties of thin films made by atomic layer deposition sliding against silicon
347Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
348Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
349Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
350Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
351Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
352Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
353Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
354Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
355Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
356Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
357Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
358Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
359Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
360Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
361Very high frequency plasma reactant for atomic layer deposition
362Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
363Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
364Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
365Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
366Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
367Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
368Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
369Atomic layer epitaxy for quantum well nitride-based devices
370Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
371Perspectives on future directions in III-N semiconductor research
372Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
373823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
374A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
375ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
376AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
377AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
378Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
379Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
380Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
381Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
382Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
383Atomic layer epitaxy for quantum well nitride-based devices
384Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
385Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
386Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
387Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
388Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
389Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
390Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
391Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
392Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
393Crystalline growth of AlN thin films by atomic layer deposition
394Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
395Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
396Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
397Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
398Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
399Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
400Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
401Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
402Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
403GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
404GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
405Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
406Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
407Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
408Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
409Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
410Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
411High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
412High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
413High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
414Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
415Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
416Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
417Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
418Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
419Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
420Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
421Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
422Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
423Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
424Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
425Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
426Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
427New materials for memristive switching
428Nitride memristors
429Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
430Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
431Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
432PEALD AlN: controlling growth and film crystallinity
433PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
434Perspectives on future directions in III-N semiconductor research
435Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
436Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
437Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
438Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
439Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
440Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
441Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
442Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
443Properties of AlN grown by plasma enhanced atomic layer deposition
444Radical Enhanced Atomic Layer Deposition of Metals and Oxides
445Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow-cathode plasma-assisted atomic layer deposition
446Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
447Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
448Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
449Silicon surface passivation with atomic layer deposited aluminum nitride
450Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
451Structural and optical characterization of low-temperature ALD crystalline AlN
452Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
453Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
454Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
455Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
456The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
457The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
458Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
459Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
460TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
461XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
462Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
463Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
464Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
465Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
466Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
467Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
468Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
469Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
470Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
471Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
472Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
473Plasma enhanced atomic layer deposition of aluminum sulfide thin films
474Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
475Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
476Composite materials and nanoporous thin layers made by atomic layer deposition
477Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
478Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
479Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
480Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
481Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
482Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
483Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
484Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
485Optical and Electrical Properties of AlxTi1-xO Films
486Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
487Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
488Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
489Breakdown and Protection of ALD Moisture Barrier Thin Films
490Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
491A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
492Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
493Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
494The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
495Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
496Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
497Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
498Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
499Tribological properties of thin films made by atomic layer deposition sliding against silicon
500Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
501Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
502Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition


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