| 1 | Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma |
| 2 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 3 | Study on the characteristics of aluminum thin films prepared by atomic layer deposition |
| 4 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 5 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
| 6 | Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization |
| 7 | Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell |
| 8 | Encapsulation method for atom probe tomography analysis of nanoparticles |
| 9 | Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells |
| 10 | 'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition |
| 11 | 1D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices |
| 12 | 46-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor |
| 13 | A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz |
| 14 | A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD |
| 15 | A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs |
| 16 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 17 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
| 18 | A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor |
| 19 | AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs |
| 20 | Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells |
| 21 | Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors |
| 22 | Advances in the fabrication of graphene transistors on flexible substrates |
| 23 | Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition |
| 24 | Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing |
| 25 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
| 26 | Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation |
| 27 | Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition |
| 28 | ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent |
| 29 | AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD |
| 30 | AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD |
| 31 | AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants |
| 32 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
| 33 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
| 34 | Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources |
| 35 | Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact |
| 36 | Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties |
| 37 | An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD |
| 38 | Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length |
| 39 | Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy |
| 40 | Anti-stiction coating for mechanically tunable photonic crystal devices |
| 41 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
| 42 | Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN |
| 43 | Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices |
| 44 | Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors |
| 45 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
| 46 | Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure |
| 47 | Atomic layer deposition of metal-oxide thin films on cellulose fibers |
| 48 | Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates |
| 49 | Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell |
| 50 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
| 51 | Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions |
| 52 | Band alignment of Al2O3 with (-201) β-Ga2O3 |
| 53 | Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer |
| 54 | Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films |
| 55 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
| 56 | Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C |
| 57 | Capacitance spectroscopy of gate-defined electronic lattices |
| 58 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
| 59 | Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment |
| 60 | Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks |
| 61 | Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method |
| 62 | Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 63 | Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma |
| 64 | Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer |
| 65 | Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range |
| 66 | Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition |
| 67 | Charge effects of ultrafine FET with nanodot type floating gate |
| 68 | Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications |
| 69 | Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment |
| 70 | Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene |
| 71 | Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics |
| 72 | Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition |
| 73 | Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 74 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 75 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
| 76 | Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide |
| 77 | Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation |
| 78 | Damage evaluation in graphene underlying atomic layer deposition dielectrics |
| 79 | DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air |
| 80 | Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process |
| 81 | Demonstration of flexible thin film transistors with GaN channels |
| 82 | Densification of Thin Aluminum Oxide Films by Thermal Treatments |
| 83 | Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices |
| 84 | Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor |
| 85 | Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters |
| 86 | DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors |
| 87 | Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films |
| 88 | Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment |
| 89 | Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition |
| 90 | Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films |
| 91 | Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures |
| 92 | Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability |
| 93 | Dynamic tuning of plasmon resonance in the visible using graphene |
| 94 | Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films |
| 95 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
| 96 | Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors |
| 97 | Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET |
| 98 | Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor |
| 99 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
| 100 | Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer |
| 101 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
| 102 | Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems |
| 103 | Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures |
| 104 | Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems |
| 105 | Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films |
| 106 | Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors |
| 107 | Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 |
| 108 | Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition |
| 109 | Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells |
| 110 | Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer |
| 111 | Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure |
| 112 | Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications |
| 113 | Electrical characterization of the slow boron oxygen defect component in Czochralski silicon |
| 114 | Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates |
| 115 | Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3 |
| 116 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
| 117 | Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition |
| 118 | Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition |
| 119 | Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon |
| 120 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
| 121 | Electrically Excited Plasmonic Nanoruler for Biomolecule Detection |
| 122 | Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer |
| 123 | Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films |
| 124 | Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells |
| 125 | Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films |
| 126 | Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment |
| 127 | Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films |
| 128 | Energy-enhanced atomic layer deposition for more process and precursor versatility |
| 129 | Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films |
| 130 | Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries |
| 131 | Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells |
| 132 | Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process |
| 133 | Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces |
| 134 | Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors |
| 135 | Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess |
| 136 | Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density |
| 137 | Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs |
| 138 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
| 139 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
| 140 | Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film |
| 141 | Experimental verification of electro-refractive phase modulation in graphene |
| 142 | Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates |
| 143 | Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric |
| 144 | Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier |
| 145 | Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils |
| 146 | Fast Flexible Plastic Substrate ZnO Circuits |
| 147 | Fast PEALD ZnO Thin-Film Transistor Circuits |
| 148 | Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 |
| 149 | Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures |
| 150 | Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V |
| 151 | Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells |
| 152 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
| 153 | Flexible, light trapping substrates for organic photovoltaics |
| 154 | Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique |
| 155 | Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition |
| 156 | Gate Insulator for High Mobility Oxide TFT |
| 157 | Graphene based on-chip variable optical attenuator operating at 855 nm wavelength |
| 158 | Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides |
| 159 | Hafnia and alumina on sulphur passivated germanium |
| 160 | High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition |
| 161 | High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits |
| 162 | High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films |
| 163 | High-efficiency embedded transmission grating |
| 164 | High-Reflective Coatings For Ground and Space Based Applications |
| 165 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
| 166 | Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency |
| 167 | Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC) |
| 168 | Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon |
| 169 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
| 170 | Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches |
| 171 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 172 | Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer |
| 173 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
| 174 | Improved understanding of recombination at the Si/Al2O3 interface |
| 175 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
| 176 | Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs |
| 177 | Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment |
| 178 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
| 179 | Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium |
| 180 | Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures |
| 181 | In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors |
| 182 | In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3 |
| 183 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
| 184 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
| 185 | Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells |
| 186 | Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor |
| 187 | Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors |
| 188 | Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface |
| 189 | Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition |
| 190 | Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe |
| 191 | Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3 |
| 192 | Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate |
| 193 | Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors |
| 194 | Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD |
| 195 | Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3 |
| 196 | Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition |
| 197 | Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect? |
| 198 | Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments |
| 199 | Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene |
| 200 | Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells |
| 201 | Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition |
| 202 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
| 203 | Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning |
| 204 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
| 205 | Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs |
| 206 | Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells |
| 207 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
| 208 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
| 209 | Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si |
| 210 | Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity |
| 211 | Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications |
| 212 | Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing |
| 213 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
| 214 | Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon |
| 215 | Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers |
| 216 | Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films |
| 217 | Localized defect states and charge trapping in atomic layer deposited-Al2O3 films |
| 218 | Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices |
| 219 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
| 220 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
| 221 | Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels |
| 222 | Low-Power Double-Gate ZnO TFT Active Rectifier |
| 223 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
| 224 | Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage |
| 225 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
| 226 | Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes |
| 227 | MANOS performance dependence on ALD Al2O3 oxidation source |
| 228 | Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si |
| 229 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
| 230 | Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells |
| 231 | Method of Fabrication for Encapsulated Polarizing Resonant Gratings |
| 232 | Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber |
| 233 | Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers |
| 234 | Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system |
| 235 | Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition |
| 236 | Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures |
| 237 | Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor |
| 238 | Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor |
| 239 | N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes |
| 240 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
| 241 | Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories |
| 242 | Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors |
| 243 | Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC |
| 244 | Nitride passivation of the interface between high-k dielectrics and SiGe |
| 245 | Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications |
| 246 | Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma |
| 247 | Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals |
| 248 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 249 | On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation |
| 250 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
| 251 | On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies |
| 252 | On the equilibrium concentration of boron-oxygen defects in crystalline silicon |
| 253 | On the role of nanoporosity in controlling the performance of moisture permeation barrier layers |
| 254 | Optical display film as flexible and light trapping substrate for organic photovoltaics |
| 255 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
| 256 | Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition |
| 257 | Optimization of the Surface Structure on Black Silicon for Surface Passivation |
| 258 | Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption |
| 259 | Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes |
| 260 | Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks |
| 261 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
| 262 | Oxide semiconductor thin film transistors on thin solution-cast flexible substrates |
| 263 | Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems |
| 264 | Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops |
| 265 | Passivation effects of atomic-layer-deposited aluminum oxide |
| 266 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
| 267 | Patterned deposition by plasma enhanced spatial atomic layer deposition |
| 268 | PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads |
| 269 | Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition |
| 270 | Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition |
| 271 | Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells |
| 272 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
| 273 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
| 274 | Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments |
| 275 | Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors |
| 276 | Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell |
| 277 | Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films |
| 278 | Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic |
| 279 | Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets |
| 280 | Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics |
| 281 | Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature |
| 282 | Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications |
| 283 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
| 284 | Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries |
| 285 | Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene |
| 286 | Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration |
| 287 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
| 288 | Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition |
| 289 | Propagation Effects in Carbon Nanoelectronics |
| 290 | Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition |
| 291 | Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center |
| 292 | Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing |
| 293 | Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3 |
| 294 | Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition |
| 295 | Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors |
| 296 | Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors |
| 297 | Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application |
| 298 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
| 299 | RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor |
| 300 | Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition |
| 301 | Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers |
| 302 | Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride |
| 303 | Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks |
| 304 | Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition |
| 305 | Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact |
| 306 | Single-Cell Photonic Nanocavity Probes |
| 307 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
| 308 | Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen |
| 309 | Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon |
| 310 | Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature |
| 311 | Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells |
| 312 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
| 313 | Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics |
| 314 | Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer |
| 315 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
| 316 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
| 317 | Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode |
| 318 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
| 319 | Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3 |
| 320 | Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide |
| 321 | Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition |
| 322 | Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million |
| 323 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
| 324 | Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers |
| 325 | Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting |
| 326 | Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime |
| 327 | The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition |
| 328 | The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides |
| 329 | The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain |
| 330 | Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates |
| 331 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
| 332 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 333 | Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides |
| 334 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 335 | Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses |
| 336 | Toward reliable MIS- and MOS-gate structures for GaN lateral power devices |
| 337 | Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs |
| 338 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
| 339 | Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal |
| 340 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 341 | Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration |
| 342 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 343 | Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content |
| 344 | Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing |
| 345 | Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers |
| 346 | Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries |
| 347 | Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection |
| 348 | Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor |
| 349 | Ultrathin Surface Coating Enables the Stable Sodium Metal Anode |
| 350 | Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers |
| 351 | Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization |
| 352 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
| 353 | Using top graphene layer as sacrificial protection during dielectric atomic layer deposition |
| 354 | Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors |
| 355 | Very high frequency plasma reactant for atomic layer deposition |
| 356 | Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions |
| 357 | Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition |
| 358 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 359 | Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures |
| 360 | Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures |
| 361 | Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition |
| 362 | Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma |
| 363 | Atomic layer epitaxy for quantum well nitride-based devices |
| 364 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 365 | Perspectives on future directions in III-N semiconductor research |
| 366 | Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films |
| 367 | 823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric |
| 368 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
| 369 | ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs |
| 370 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
| 371 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
| 372 | Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition |
| 373 | Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma |
| 374 | Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes |
| 375 | Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia |
| 376 | Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation |
| 377 | Atomic layer epitaxy for quantum well nitride-based devices |
| 378 | Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition |
| 379 | Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics |
| 380 | Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition |
| 381 | Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films |
| 382 | Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources |
| 383 | Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process |
| 384 | Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT |
| 385 | Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 386 | Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition |
| 387 | Crystalline growth of AlN thin films by atomic layer deposition |
| 388 | Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films |
| 389 | Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 390 | Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 |
| 391 | Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer |
| 392 | Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN |
| 393 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy |
| 394 | Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method |
| 395 | Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition |
| 396 | GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride |
| 397 | GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation |
| 398 | Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer |
| 399 | Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides |
| 400 | Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
| 401 | Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
| 402 | Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition |
| 403 | Growth of aluminum nitride films by plasma-enhanced atomic layer deposition |
| 404 | High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
| 405 | High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy |
| 406 | High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning |
| 407 | Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures |
| 408 | Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack |
| 409 | Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs |
| 410 | Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer |
| 411 | Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric |
| 412 | Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition |
| 413 | Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition |
| 414 | Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films |
| 415 | Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy |
| 416 | Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing |
| 417 | Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures |
| 418 | Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100) |
| 419 | Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 420 | New materials for memristive switching |
| 421 | Nitride memristors |
| 422 | Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition |
| 423 | Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition |
| 424 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
| 425 | PEALD AlN: controlling growth and film crystallinity |
| 426 | PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity |
| 427 | Perspectives on future directions in III-N semiconductor research |
| 428 | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
| 429 | Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas |
| 430 | Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering |
| 431 | Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs |
| 432 | Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films |
| 433 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 434 | Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN |
| 435 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
| 436 | Properties of AlN grown by plasma enhanced atomic layer deposition |
| 437 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 438 | Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices |
| 439 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
| 440 | Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition |
| 441 | Silicon surface passivation with atomic layer deposited aluminum nitride |
| 442 | Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films |
| 443 | Structural and optical characterization of low-temperature ALD crystalline AlN |
| 444 | Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures |
| 445 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
| 446 | Surface passivation of GaAs nanowires by the atomic layer deposition of AlN |
| 447 | Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition |
| 448 | The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition |
| 449 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
| 450 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 451 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
| 452 | TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition |
| 453 | XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition |
| 454 | Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment |
| 455 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
| 456 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 457 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
| 458 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
| 459 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
| 460 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
| 461 | Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell |
| 462 | Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment |
| 463 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
| 464 | Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate |
| 465 | Plasma enhanced atomic layer deposition of aluminum sulfide thin films |
| 466 | Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy |
| 467 | Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 468 | Composite materials and nanoporous thin layers made by atomic layer deposition |
| 469 | Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition |
| 470 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
| 471 | Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells |
| 472 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
| 473 | Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition |
| 474 | Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 475 | Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal |
| 476 | Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique |
| 477 | Optical and Electrical Properties of AlxTi1-xO Films |
| 478 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
| 479 | Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants |
| 480 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
| 481 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
| 482 | Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement |
| 483 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 484 | Properties of HfAlO film deposited by plasma enhanced atomic layer deposition |
| 485 | Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping |
| 486 | The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces |
| 487 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
| 488 | Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment |
| 489 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 490 | Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics |
| 491 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 492 | Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 493 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 494 | Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition |