TMA, AlMe3, Trimethyl Aluminum, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al)
2Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
3Sigma-Aldrich, Co. LLCTrimethylaluminum 97%
4Strem Chemicals, Inc.Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
5Strem Chemicals, Inc.Trimethylaluminum, min. 98% (Material sold in non-returnable cylinder)
6Strem Chemicals, Inc.Trimethylaluminum, min. 98%, contained in high-temp 50 ml cylinder for CVD/ALD
7Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 564 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
2Radical Enhanced Atomic Layer Deposition of Metals and Oxides
3Study on the characteristics of aluminum thin films prepared by atomic layer deposition
4Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
5Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
6Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
7Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
8Encapsulation method for atom probe tomography analysis of nanoparticles
9Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
10'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
111D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
1246-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
13A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
14A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
15A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
16A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
17A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
18A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
19AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
20Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
21Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
22Advances in the fabrication of graphene transistors on flexible substrates
23Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
24Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
25Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
26Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
27Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
28ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
29AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
30AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
31AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
32AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
33AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
34Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
35Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
36Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
37An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
38Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
39Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
40Anti-stiction coating for mechanically tunable photonic crystal devices
41Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
42Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
43Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
44Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
45Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films
46Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
47Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
48Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
49Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
50Atomic layer deposition of metal-oxide thin films on cellulose fibers
51Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
52Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
53Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
54AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
55Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
56Band alignment of Al2O3 with (-201) β-Ga2O3
57Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
58Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
59Breakdown and Protection of ALD Moisture Barrier Thin Films
60Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
61Capacitance spectroscopy of gate-defined electronic lattices
62Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
63Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
64Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
65Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
66Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
67Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
68Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
69Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
70Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
71Charge effects of ultrafine FET with nanodot type floating gate
72Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
73Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
74Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
75Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
76Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
77Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
78Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
79Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
80Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
81Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
82Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
83Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
84Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
85Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
86Damage evaluation in graphene underlying atomic layer deposition dielectrics
87DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
88Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
89Densification of Thin Aluminum Oxide Films by Thermal Treatments
90Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
91Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
92Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
93DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
94Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
95Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
96Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
97Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
98Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
99Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
100Dynamic tuning of plasmon resonance in the visible using graphene
101Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
102Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
103Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
104Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
105Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
106Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
107Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
108Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
109Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
110Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
111Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
112Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
113Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
114Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
115Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
116Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
117Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
118Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
119Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
120Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
121Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
122Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
123Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
124Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
125Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
126Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
127Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
128Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
129Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
130Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
131Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
132Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
133Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
134Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
135Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
136Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
137Energy-enhanced atomic layer deposition for more process and precursor versatility
138Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
139Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
140Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
141Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
142Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
143Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
144Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
145Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
146Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
147Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
148Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
149Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
150Experimental verification of electro-refractive phase modulation in graphene
151Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
152Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
153Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
154Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
155Fast Flexible Plastic Substrate ZnO Circuits
156Fast PEALD ZnO Thin-Film Transistor Circuits
157Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
158Fiber-matrix interface reinforcement using Atomic Layer Deposition
159Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
160Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
161Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
162Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
163Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
164First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
165Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
166Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
167Flexible, light trapping substrates for organic photovoltaics
168Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
169Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
170Gate Insulator for High Mobility Oxide TFT
171Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
172Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
173Hafnia and alumina on sulphur passivated germanium
174High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
175High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
176High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
177High-efficiency embedded transmission grating
178High-Reflective Coatings For Ground and Space Based Applications
179High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
180Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
181Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
182Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
183Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
184Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
185Impact of interface materials on side permeation in indirect encapsulation of organic electronics
186Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
187Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
188Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
189Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
190Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
191Improved understanding of recombination at the Si/Al2O3 interface
192Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
193Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
194Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
195Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
196Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
197Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
198In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
199In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
200In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
201In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
202Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
203Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
204Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
205Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
206Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
207Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
208Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
209Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
210Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
211Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
212Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
213Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
214Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
215Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
216Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
217Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
218Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
219Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
220Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
221Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
222Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
223Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
224Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
225Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
226Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
227Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
228Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
229Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
230Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
231Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
232Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
233Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
234Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
235Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
236Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
237Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
238Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
239Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
240Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
241Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
242Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
243Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
244Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
245Lithium-Iron (III) Fluoride Battery with Double Surface Protection
246Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
247Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
248Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
249Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
250Low-Power Double-Gate ZnO TFT Active Rectifier
251Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
252Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
253Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
254Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
255MANOS performance dependence on ALD Al2O3 oxidation source
256Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
257Mechanical properties of thin-film Parylene-metal-Parylene devices
258Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
259Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
260Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
261Method of Fabrication for Encapsulated Polarizing Resonant Gratings
262Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
263Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
264Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
265Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
266Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
267Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
268Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
269MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
270Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
271N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
272Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
273Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
274Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
275Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
276Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
277Nitride passivation of the interface between high-k dielectrics and SiGe
278Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
279Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
280Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
281Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
282On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
283On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
284On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
285On the equilibrium concentration of boron-oxygen defects in crystalline silicon
286On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
287On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
288Optical display film as flexible and light trapping substrate for organic photovoltaics
289Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
290Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
291Optimization of the Surface Structure on Black Silicon for Surface Passivation
292Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
293Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
294Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
295Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
296Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
297Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
298Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
299Passivation effects of atomic-layer-deposited aluminum oxide
300Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
301Patterned deposition by plasma enhanced spatial atomic layer deposition
302PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
303Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
304Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
305Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
306Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
307Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
308Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
309Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
310Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
311Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
312Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
313Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
314Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
315Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
316Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
317Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
318Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
319Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
320Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
321Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
322Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
323Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
324Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
325Propagation Effects in Carbon Nanoelectronics
326Protective capping and surface passivation of III-V nanowires by atomic layer deposition
327Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
328Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
329Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
330Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
331Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
332Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
333Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
334Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
335Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
336Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
337RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
338Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
339Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
340Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
341Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
342Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
343Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
344Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
345Single-Cell Photonic Nanocavity Probes
346Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
347Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
348Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
349Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
350Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
351Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
352Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
353Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
354Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
355Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
356Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
357Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
358Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
359Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
360Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
361Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
362Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
363Symmetrical Al2O3-based passivation layers for p- and n-type silicon
364Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
365Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
366Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
367The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
368The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
369The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
370Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
371Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
372Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
373Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
374TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
375Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
376Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
377Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
378Trapped charge densities in Al2O3-based silicon surface passivation layers
379Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
380Tribological properties of thin films made by atomic layer deposition sliding against silicon
381Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
382Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
383Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
384Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
385Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
386Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
387Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
388Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
389Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
390Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
391Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
392Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
393Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
394Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
395Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
396Very high frequency plasma reactant for atomic layer deposition
397Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
398Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
399Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
400Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
401Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
402Atomic layer epitaxy for quantum well nitride-based devices
403Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
404Perspectives on future directions in III-N semiconductor research
405Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
406823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
407A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
408A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
409A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
410ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
411AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
412AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
413AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
414Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
415Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
416Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
417Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
418Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
419Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
420Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
421Atomic layer epitaxy for quantum well nitride-based devices
422Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
423Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
424Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
425Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
426Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
427Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
428Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
429Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
430Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
431Crystalline growth of AlN thin films by atomic layer deposition
432Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
433Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
434Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
435Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
436Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
437Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
438Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
439Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
440Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
441Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
442GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
443GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
444Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
445Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
446Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
447Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
448Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
449Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
450High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
451High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
452High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
453Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
454Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
455Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
456Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
457Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
458Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
459Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
460Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
461Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
462Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
463New materials for memristive switching
464Nitride memristors
465Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
466Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
467PEALD AlN: controlling growth and film crystallinity
468PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
469Perspectives on future directions in III-N semiconductor research
470Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
471Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
472Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
473Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
474Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
475Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
476Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
477Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
478Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
479Properties of AlN grown by plasma enhanced atomic layer deposition
480Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
481Protective capping and surface passivation of III-V nanowires by atomic layer deposition
482Radical Enhanced Atomic Layer Deposition of Metals and Oxides
483Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
484Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
485Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
486Silicon surface passivation with atomic layer deposited aluminum nitride
487Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
488Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
489Structural and optical characterization of low-temperature ALD crystalline AlN
490Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
491Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
492Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
493Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
494The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
495The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
496Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
497Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
498TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
499XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
500Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
501Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
502Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
503Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
504Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
505Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
506Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
507Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
508Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
509Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
510Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
511Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
512Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
513Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
514Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
515Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
516Plasma enhanced atomic layer deposition of aluminum sulfide thin films
517Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
518Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
519Composite materials and nanoporous thin layers made by atomic layer deposition
520Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
521Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
522Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
523Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
524Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
525Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
526Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
527Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
528Optical and Electrical Properties of AlxTi1-xO Films
529Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
530Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
531Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
532Breakdown and Protection of ALD Moisture Barrier Thin Films
533Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
534A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
535Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
536Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
537The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
538Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
539Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
540Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
541Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
542Tribological properties of thin films made by atomic layer deposition sliding against silicon
543Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
544Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
545Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition