TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorRegionLink
1Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum 97%
2Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in high-temp cylinder
3DOCK/CHEMICALS🇩🇪Trimethylaluminum
4Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
5Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
6Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al) PURATREM
7Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
8Yoodatech (Shanghai) Co., LtdTMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3 - contact maggie@yoodatech.com
9Pegasus Chemicals🇬🇧Trimethylaluminium
10American Elements🇺🇸Trimethylaluminum
11Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum packaged for use in deposition systems
12Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 615 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer
2Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
3Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
4Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
5Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
6Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
7Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
8Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
9Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
10Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
11AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
12Radical Enhanced Atomic Layer Deposition of Metals and Oxides
13Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
14Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
15Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
16Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
17Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
18Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
19Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
20Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
21Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
22Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
23Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
24Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
25Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
26Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
27A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
28Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
29Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
30Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
31Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
32Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
33Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
34Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
35Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
36Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
37Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
38Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
39Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
40Advances in the fabrication of graphene transistors on flexible substrates
41Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
42Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
43Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
44Hafnia and alumina on sulphur passivated germanium
45In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
46Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
47Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
48Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
49Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
50Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
51Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
52Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
53Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
54Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
55'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
56Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
57Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
58Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
59Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
60Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
61Optical and Electrical Properties of AlxTi1-xO Films
62Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
63Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
64Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
65Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
66Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
67High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
68Improved understanding of recombination at the Si/Al2O3 interface
69Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
70Lithium-Iron (III) Fluoride Battery with Double Surface Protection
71On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
72Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
73Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
74Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
75Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
76Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
77Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
78Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
79Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
80Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
81Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
82Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
83Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
84Method of Fabrication for Encapsulated Polarizing Resonant Gratings
85Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
86RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
87Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
88Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
89Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
90Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
91Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
92Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
93In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
94Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
951D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
96Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
97Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
98Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
99Patterned deposition by plasma enhanced spatial atomic layer deposition
100Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
101Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
102Properties of AlN grown by plasma enhanced atomic layer deposition
103Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
104Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
105Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
106Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
107Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
108Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
109Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
110High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
111Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
112Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
113Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
114Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
115Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
116Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
117On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
118Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
119Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
120Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
121New materials for memristive switching
122PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
123Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
124Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
125Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
126Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
127Sub-nanometer heating depth of atomic layer annealing
128Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
129Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
130Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
131Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
132Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
133DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
134Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
135The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
136Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
137Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
138Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor
139AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
140Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
141Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
142Study on the characteristics of aluminum thin films prepared by atomic layer deposition
143XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
144Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
145Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
146AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
147Mechanical properties of thin-film Parylene-metal-Parylene devices
148AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
149Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
150Plasma enhanced atomic layer deposition of aluminum sulfide thin films
151Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources
152Flexible, light trapping substrates for organic photovoltaics
153Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
154In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
155Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
156Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
157Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
158Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
159A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
160On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
161In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition
162Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
163Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
164Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
165Optimization of the Surface Structure on Black Silicon for Surface Passivation
166Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
167Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
168GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
169Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers
170Densification of Thin Aluminum Oxide Films by Thermal Treatments
171Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
172Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
173Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
174Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
175N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
176Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
177DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
178Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
179Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
180MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
181Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films
182Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
183Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
184Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
185Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
186Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
187Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
188Tube-type plasma-enhanced atomic layer deposition of aluminum oxide: Enabling record lab performance for the industry with demonstrated cell efficiencies >24%
189Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
190First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
191Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
192Protective capping and surface passivation of III-V nanowires by atomic layer deposition
193Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
194Perspectives on future directions in III-N semiconductor research
195Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
196Passivation effects of atomic-layer-deposited aluminum oxide
197Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
198Anti-stiction coating for mechanically tunable photonic crystal devices
199Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
200Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
201Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
202Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
203Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
204Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
205Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
206Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
207Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
208Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
209Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
210Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
211Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
212A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
213Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
214Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
215Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
216Nanoscale Encapsulation of Hybrid Perovskites Using Hybrid Atomic Layer Deposition
217Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
218Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
219High-efficiency embedded transmission grating
220Impact of interface materials on side permeation in indirect encapsulation of organic electronics
221Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
222Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
223Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
224Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
225Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
226Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
227Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
228Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
229Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
230Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
231Trapped charge densities in Al2O3-based silicon surface passivation layers
232Protective capping and surface passivation of III-V nanowires by atomic layer deposition
233An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
234Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
235Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
236Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
237ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
238Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
239Tribological properties of thin films made by atomic layer deposition sliding against silicon
240Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
241Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
242Dynamic tuning of plasmon resonance in the visible using graphene
243Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
244Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
245Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
246Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
247Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy
248Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
249Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
250Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
251Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
252Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
253Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
254Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
255Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
256Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
257Perspectives on future directions in III-N semiconductor research
258Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
259Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition
260GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
261Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
262Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
263Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
264Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
265Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
266On the equilibrium concentration of boron-oxygen defects in crystalline silicon
267Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
268Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
269Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
270Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
271Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
272Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
273Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
274Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
275Tuning size and coverage of Pd nanoparticles using atomic layer deposition
276Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
277Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
278Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
279Atomic layer epitaxy for quantum well nitride-based devices
280Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
281Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
282Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
283Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth
284The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
285Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
286Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
287Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
288Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
289Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
290Fast PEALD ZnO Thin-Film Transistor Circuits
291Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
292Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
293Encapsulation method for atom probe tomography analysis of nanoparticles
294Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
295High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
296Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
297A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
298Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
299Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition
300Fiber-matrix interface reinforcement using Atomic Layer Deposition
301Radical Enhanced Atomic Layer Deposition of Metals and Oxides
302AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
303Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
304Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
305Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
306Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
307Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
308Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
309Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
310Charge effects of ultrafine FET with nanodot type floating gate
311AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
312Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
313Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
31446-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
315Propagation Effects in Carbon Nanoelectronics
316Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
317Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
318A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
319Low-Power Double-Gate ZnO TFT Active Rectifier
320AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
321Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
322Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
323Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
324Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
325Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
326Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma
327Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
328The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
329Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
330Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
331Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
332823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
333Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
334Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
335Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
336Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
337Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
338Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
339Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
340Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
341Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
342Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
343Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
344Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
345Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
346Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
347Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
348Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
349Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
350Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
351Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
352Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
353Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
354High-Reflective Coatings For Ground and Space Based Applications
355Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
356Gate Insulator for High Mobility Oxide TFT
357Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
358Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
359Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
360Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition
361Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
362Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
363Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
364A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
365Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
366Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
367Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
368Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
369Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
370Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
371The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
372Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
373Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
374Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
375Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
376Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
377The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
378Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
379Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
380Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
381Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
382Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
383Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
384Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
385Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
386Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
387Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
388Tribological properties of thin films made by atomic layer deposition sliding against silicon
389Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
390MANOS performance dependence on ALD Al2O3 oxidation source
391Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
392Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
393Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
394Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
395Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
396Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
397Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
398Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
399Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
400Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
401Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
402Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
403Atomic layer epitaxy for quantum well nitride-based devices
404Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
405Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
406Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
407Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
408Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
409Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
410Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
411Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
412A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
413Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
414Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
415Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
416Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition
417Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
418Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
419Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
420Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
421Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
422Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
423Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
424Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
425PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
426Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
427Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
428Structural and optical characterization of low-temperature ALD crystalline AlN
429Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
430Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
431Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
432High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
433Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
434Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
435A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
436Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
437Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
438Very high frequency plasma reactant for atomic layer deposition
439Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
440Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
441Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
442Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
443AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
444The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
445Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
446Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
447Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
448Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
449Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
450Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
451Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
452Energy-enhanced atomic layer deposition for more process and precursor versatility
453Symmetrical Al2O3-based passivation layers for p- and n-type silicon
454Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
455Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
456Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
457Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
458Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
459Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
460Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
461Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
462Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
463Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
464Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
465On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
466Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
467Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
468Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
469Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
470Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
471Nitride passivation of the interface between high-k dielectrics and SiGe
472Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
473Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
474Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
475PEALD AlN: controlling growth and film crystallinity
476Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
477Single-Cell Photonic Nanocavity Probes
478Band alignment of Al2O3 with (-201) β-Ga2O3
479Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
480Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
481Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
482Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
483Atomic layer deposition of metal-oxide thin films on cellulose fibers
484Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
485Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
486Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
487Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
488Crystalline growth of AlN thin films by atomic layer deposition
489Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
490Fast Flexible Plastic Substrate ZnO Circuits
491Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
492Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
493Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
494Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
495Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
496Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
497Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
498Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
499Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
500Silicon surface passivation with atomic layer deposited aluminum nitride
501Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
502Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
503Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
504Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
505Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
506Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
507Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
508Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
509Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
510Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
511Optical in situ monitoring of plasma-enhanced atomic layer deposition process
512Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
513Nitride memristors
514Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
515Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
516A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
517Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
518Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
519The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
520AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
521AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
522Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
523Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
524Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
525Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
526Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
527Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
528Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
529Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
530Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors
531Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
532Breakdown and Protection of ALD Moisture Barrier Thin Films
533Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
534High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
535Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
536AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
537On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
538Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
539Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
540Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
541Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
542Capacitance spectroscopy of gate-defined electronic lattices
543Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
544Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
545Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
546Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
547Residual stress study of thin films deposited by atomic layer deposition
548In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
549Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
550Nonvolatile Capacitive Crossbar Array for In-Memory Computing
551Breakdown and Protection of ALD Moisture Barrier Thin Films
552Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
553Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
554Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
555Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
556Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
557Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
558Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors
559Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
560Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
561TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
562Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
563Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
564ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
565A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
566Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
567Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
568Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
569High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
570High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
571Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition
572Damage evaluation in graphene underlying atomic layer deposition dielectrics
573Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
574Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
575Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
576Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
577Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
578Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
579Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
580Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
581Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
582Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
583Experimental verification of electro-refractive phase modulation in graphene
584Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
585Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
586Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
587Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
588Composite materials and nanoporous thin layers made by atomic layer deposition
589TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
590Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition
591Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
592Innovative remote plasma source for atomic layer deposition for GaN devices
593Optical display film as flexible and light trapping substrate for organic photovoltaics
594Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
595Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
596Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs