Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorRegionLink
1American Elements🇺🇸Trimethylaluminum
2Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%
3Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
4Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
5Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum 97%
6Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al) PURATREM
7Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
8Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum packaged for use in deposition systems
9Pegasus Chemicals🇬🇧Trimethylaluminium
10Yoodatech (Shanghai) Co., LtdTMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3 - contact maggie@yoodatech.com
11DOCK/CHEMICALS🇩🇪Trimethylaluminum
12Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in high-temp cylinder

www.plasma-ald.com does not endorse any chemical suppliers. These links are provided for the benefit of our users. If a link goes bad, let us know.

If you would like your company's precursor products listed, or your existing listing changed or removed, send me an email.


Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 615 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
2High-efficiency embedded transmission grating
3Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
4Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
5Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
6Mechanical properties of thin-film Parylene-metal-Parylene devices
7Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
8Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
9Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
10Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
11Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
12Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
13Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
14Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
15Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
16Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
17Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor
18Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
19Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
20Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
21The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
22A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
23Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
24Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
25Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
26Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
27Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors
28AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
29Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
30Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
31In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
32Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
33Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
34Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
35Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
36Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
37A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
38Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
39Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
40Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
41Sub-nanometer heating depth of atomic layer annealing
42Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
43Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
44Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
45Capacitance spectroscopy of gate-defined electronic lattices
46Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
47Band alignment of Al2O3 with (-201) β-Ga2O3
48Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
49Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
50Tribological properties of thin films made by atomic layer deposition sliding against silicon
51Propagation Effects in Carbon Nanoelectronics
52Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
53Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
54Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
55Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
56Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
57Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
58Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
59Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
60Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
61Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
62Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
63Nitride memristors
64Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
65Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
66Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
67Atomic layer deposition of metal-oxide thin films on cellulose fibers
68Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
69Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
70PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
71Symmetrical Al2O3-based passivation layers for p- and n-type silicon
72Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
73Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
74Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
75Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
76PEALD AlN: controlling growth and film crystallinity
77Gate Insulator for High Mobility Oxide TFT
78Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
79AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
80Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
81Study on the characteristics of aluminum thin films prepared by atomic layer deposition
82Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
83Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
84Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
85Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
86Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
87Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
88Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
89Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
90Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
91Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
92Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
93In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
94Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
95Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
96Nitride passivation of the interface between high-k dielectrics and SiGe
97On the equilibrium concentration of boron-oxygen defects in crystalline silicon
98Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
99Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
100Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
101Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
102Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
103Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
104Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
105Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
106Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
107Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
108Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
109Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
110Fiber-matrix interface reinforcement using Atomic Layer Deposition
111Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
112An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
113Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
114Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
115Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
116Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
117Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
118The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
119Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
120Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
121Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
122Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
123Composite materials and nanoporous thin layers made by atomic layer deposition
124Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
125Advances in the fabrication of graphene transistors on flexible substrates
126ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
127Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
128Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
129A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
130Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
131Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
132MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
133Tuning size and coverage of Pd nanoparticles using atomic layer deposition
134Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
135Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
136Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
137AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
138Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
139Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
140Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth
141Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
142Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
143Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
144Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
145Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
146Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
147Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers
148Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
149Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
150Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
151Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
152Protective capping and surface passivation of III-V nanowires by atomic layer deposition
153Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
154Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
155Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
156Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
157Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
158Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
159Atomic layer epitaxy for quantum well nitride-based devices
160Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
161Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
162Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources
163Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
164Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
165Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
166Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
167Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
168Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
169Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors
170Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
171Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
172Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
173Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
174Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
175Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
176ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
177Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
178Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
179Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
180Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
181Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
182Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
183Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
184High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
185AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
186Properties of AlN grown by plasma enhanced atomic layer deposition
187On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
188Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
189The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
190The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
191Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
192Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
193Silicon surface passivation with atomic layer deposited aluminum nitride
194TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
195Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
196A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
197Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
198Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
199In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition
200A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer
201High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
202Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
203Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
204Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
205Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
206Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
207Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
208Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
209Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
210Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
211Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
212Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
213High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
214Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
215Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
216Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
217On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
218Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
219Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
220Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
221Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
222Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
223Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
224Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
225Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
226Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
227Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
228The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
229Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
230Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
231A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
232Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
233Lithium-Iron (III) Fluoride Battery with Double Surface Protection
234Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
235On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
236Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
237Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
238Charge effects of ultrafine FET with nanodot type floating gate
239Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
240Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition
241Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
242Tribological properties of thin films made by atomic layer deposition sliding against silicon
243Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
244Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
245Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
246Tube-type plasma-enhanced atomic layer deposition of aluminum oxide: Enabling record lab performance for the industry with demonstrated cell efficiencies >24%
247Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
248Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
249Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
250High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
251Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
252Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
253Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
254Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
255Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
256High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
2571D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
258Optical display film as flexible and light trapping substrate for organic photovoltaics
259Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
260Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
261Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
262Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
263Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
264Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
265Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
266Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
267Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
268Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
269Hafnia and alumina on sulphur passivated germanium
270Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
271Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
272AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
273Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
274RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
275Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
276Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
277MANOS performance dependence on ALD Al2O3 oxidation source
278Radical Enhanced Atomic Layer Deposition of Metals and Oxides
279Nonvolatile Capacitive Crossbar Array for In-Memory Computing
280Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
281Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
282Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
283Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
284In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
285Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma
286Very high frequency plasma reactant for atomic layer deposition
287Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
288Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
289Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
290Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
291Experimental verification of electro-refractive phase modulation in graphene
292Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
293Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
294In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
295Method of Fabrication for Encapsulated Polarizing Resonant Gratings
296Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
297Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
298Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
299Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
300Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
301Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
302Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
303Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
304Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
305Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
306Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
307Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
308Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
309Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition
310Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
311Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
312Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
313Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
314Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
315Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
316Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
317Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
318Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
319Energy-enhanced atomic layer deposition for more process and precursor versatility
320Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
321Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
322Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition
323Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
324Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
325Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
326823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
327Impact of interface materials on side permeation in indirect encapsulation of organic electronics
328Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
329Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
330Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
331Damage evaluation in graphene underlying atomic layer deposition dielectrics
332Flexible, light trapping substrates for organic photovoltaics
333Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
334On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
335Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition
336Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
337Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
338Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
339Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
340Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
341Trapped charge densities in Al2O3-based silicon surface passivation layers
342Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
343Optical and Electrical Properties of AlxTi1-xO Films
344Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
345Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
346Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
347N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
348Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
349Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
350Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
351GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
352Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
353Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
354Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
355Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
356Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
357Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
358Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
359Perspectives on future directions in III-N semiconductor research
360Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
361Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
362AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
363Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
364Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
365Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
366Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
367Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
368Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
369The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
370Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
371Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
372Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
373Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
374Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
375Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
376Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
377Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
378Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
379Patterned deposition by plasma enhanced spatial atomic layer deposition
380Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy
381Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
382Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
383Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
384Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
385A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
386High-Reflective Coatings For Ground and Space Based Applications
387Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
388Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
389Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
390Residual stress study of thin films deposited by atomic layer deposition
391Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
392Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
393Protective capping and surface passivation of III-V nanowires by atomic layer deposition
394Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
395Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
396Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
397'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
398Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
399Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
400Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
401Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
402TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
403Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
404Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
405Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
406Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
407Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
408Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
409Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
410Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
411Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
412Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
413Atomic layer epitaxy for quantum well nitride-based devices
414Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
415Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
416Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
417Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
418Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
419Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
420Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
421Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
422Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
423Perspectives on future directions in III-N semiconductor research
424Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
425Improved understanding of recombination at the Si/Al2O3 interface
426Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
427Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
428Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
429Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
430Breakdown and Protection of ALD Moisture Barrier Thin Films
431DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
432Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
433Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
434AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
435Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
436AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
437Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
438Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
439Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films
440Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
441Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
442Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
443Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
444Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
445Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
446Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
447Passivation effects of atomic-layer-deposited aluminum oxide
448Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
449Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
450Structural and optical characterization of low-temperature ALD crystalline AlN
451Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
452Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
453Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
454Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
455Fast PEALD ZnO Thin-Film Transistor Circuits
456Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
457Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
458Dynamic tuning of plasmon resonance in the visible using graphene
45946-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
460Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
461Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
462Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
463GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
464Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
465Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
466Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
467Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
468Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
469Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
470Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
471Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
472Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
473Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
474Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
475Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
476Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
477Low-Power Double-Gate ZnO TFT Active Rectifier
478Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
479Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
480Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
481Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
482Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
483Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
484New materials for memristive switching
485Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
486Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
487Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
488Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
489Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
490Crystalline growth of AlN thin films by atomic layer deposition
491Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
492A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
493Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
494Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
495First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
496Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
497Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
498Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
499Radical Enhanced Atomic Layer Deposition of Metals and Oxides
500Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
501Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
502Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
503Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
504Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
505Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
506A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
507Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
508Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
509Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
510A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
511Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
512Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
513Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
514Densification of Thin Aluminum Oxide Films by Thermal Treatments
515Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
516Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
517AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
518Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
519Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
520Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
521Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
522Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
523Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
524Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
525Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
526Anti-stiction coating for mechanically tunable photonic crystal devices
527Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
528Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
529Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
530Innovative remote plasma source for atomic layer deposition for GaN devices
531Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
532Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
533Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
534Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
535A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
536Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
537Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
538Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
539XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
540High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
541Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
542Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
543Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
544Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
545Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
546Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
547Fast Flexible Plastic Substrate ZnO Circuits
548Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
549AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
550Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
551Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
552Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
553Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
554Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
555Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
556Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition
557Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
558Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
559Nanoscale Encapsulation of Hybrid Perovskites Using Hybrid Atomic Layer Deposition
560Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
561Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
562On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
563Breakdown and Protection of ALD Moisture Barrier Thin Films
564Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
565PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
566Single-Cell Photonic Nanocavity Probes
567Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
568Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
569Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
570Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
571Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
572Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
573Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
574Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
575Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
576Plasma enhanced atomic layer deposition of aluminum sulfide thin films
577Optimization of the Surface Structure on Black Silicon for Surface Passivation
578Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition
579DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
580Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
581Optical in situ monitoring of plasma-enhanced atomic layer deposition process
582Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
583Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
584Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
585Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
586Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
587Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
588Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
589Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
590Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
591Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
592AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
593The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
594High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
595Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
596Encapsulation method for atom probe tomography analysis of nanoparticles