TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorRegionLink
1Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
2DOCK/CHEMICALS🇩🇪Trimethylaluminum
3Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al) PURATREM
4Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
5Pegasus Chemicals🇬🇧Trimethylaluminium
6Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum packaged for use in deposition systems
7Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum 97%
8American Elements🇺🇸Trimethylaluminum
9Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
10Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%
11Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in high-temp cylinder

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 613 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
2Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
3Breakdown and Protection of ALD Moisture Barrier Thin Films
4Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
5Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
6Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
7Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
8Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
9Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
10Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
11Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
12Lithium-Iron (III) Fluoride Battery with Double Surface Protection
13Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
14Atomic layer epitaxy for quantum well nitride-based devices
15Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
16Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
17A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
18Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
19Dynamic tuning of plasmon resonance in the visible using graphene
20XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
21Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
22Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
23Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
24Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
25Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
26On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
27Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor
28Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
29Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
30Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
31Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
32Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
33Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
34AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
35Plasma enhanced atomic layer deposition of aluminum sulfide thin films
36Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
37Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
38Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
39High-Reflective Coatings For Ground and Space Based Applications
40Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
41Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
42Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
43Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
44Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
45On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
46Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
47Residual stress study of thin films deposited by atomic layer deposition
48Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
49Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
50Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
51Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
52Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
53Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
54Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
55Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
56Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
57PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
58Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
59Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
60Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
61Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
62Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
63Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
64Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
65Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
66A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
67Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
68Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
69A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer
70Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
71Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
72Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
73Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
74Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
75Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
76'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
77Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
78Gate Insulator for High Mobility Oxide TFT
79Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
80Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
81Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
82Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
83Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
84Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
85Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
86Single-Cell Photonic Nanocavity Probes
87Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
88Tuning size and coverage of Pd nanoparticles using atomic layer deposition
89Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
90Flexible, light trapping substrates for organic photovoltaics
91PEALD AlN: controlling growth and film crystallinity
92Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
93Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
94Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
95Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
96Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
97Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
98The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
99Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
100Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
101A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
102Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
103Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
104Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
105Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
106High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
1071D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
108Nanoscale Encapsulation of Hybrid Perovskites Using Hybrid Atomic Layer Deposition
109Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
110GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
111Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
112The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
113Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
114Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
115Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
116Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
117Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
118Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
119MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
120Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma
121Perspectives on future directions in III-N semiconductor research
122A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
123DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
124Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
125Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
126Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
127Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
128Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
129AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
130Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films
131TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
132Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
133Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
134Patterned deposition by plasma enhanced spatial atomic layer deposition
135Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
136Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
137Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
138Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
139Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth
140AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
141Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
142Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
143Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
144Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
145Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
146Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
147Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
148Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
149Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
150Perspectives on future directions in III-N semiconductor research
151Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
152AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
153Optical and Electrical Properties of AlxTi1-xO Films
154Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
155Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
156Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
157Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
158On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
159Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
160Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
161Method of Fabrication for Encapsulated Polarizing Resonant Gratings
162Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
163High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
164Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
165Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
166Composite materials and nanoporous thin layers made by atomic layer deposition
167Crystalline growth of AlN thin films by atomic layer deposition
168Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
169Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
170Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
171Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
172Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
173Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
174Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
175Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
176Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
177Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition
178Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition
179Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
180Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers
181Innovative remote plasma source for atomic layer deposition for GaN devices
182Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
183Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
184Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
185Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
186Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
187Nonvolatile Capacitive Crossbar Array for In-Memory Computing
188Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
189Symmetrical Al2O3-based passivation layers for p- and n-type silicon
190Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
191Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources
192Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
193Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
194Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
195Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
196Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
197Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
198Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
199Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
200Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
201Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
202Charge effects of ultrafine FET with nanodot type floating gate
203Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
204Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
205Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
206Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
207Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
208Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
209Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
210Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
211Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
212Optimization of the Surface Structure on Black Silicon for Surface Passivation
213High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
214Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
215Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
216Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
217Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
218Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
219Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
220Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
221Sub-nanometer heating depth of atomic layer annealing
222Very high frequency plasma reactant for atomic layer deposition
223Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
224Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
225On the equilibrium concentration of boron-oxygen defects in crystalline silicon
226Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
227The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
228Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
229Fiber-matrix interface reinforcement using Atomic Layer Deposition
230Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
231Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
232MANOS performance dependence on ALD Al2O3 oxidation source
233Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
234Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
235Properties of AlN grown by plasma enhanced atomic layer deposition
236Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
237Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
238Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
239Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
240Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
241Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
242Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
243A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
244DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
245Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
246Tribological properties of thin films made by atomic layer deposition sliding against silicon
247Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
248Band alignment of Al2O3 with (-201) β-Ga2O3
249Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors
250Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
251Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
252ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
253Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
254On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
255Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
256Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
257Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
258Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
259Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
260Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
261Atomic layer deposition of metal-oxide thin films on cellulose fibers
262AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
263Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
264In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
265High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
266Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
267The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
268Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
269Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
270Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
271Improved understanding of recombination at the Si/Al2O3 interface
272Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
273Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
274Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
275Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
276Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
277Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
278Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
279Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
280Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
281Capacitance spectroscopy of gate-defined electronic lattices
282Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
283Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
284Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
285Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
286Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
287Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
288Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
289Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
290Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
291Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
292Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
293GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
294Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
295Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
296Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
297Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
298Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
299Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
300Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
301Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
302Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
303Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
304Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
305Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
306Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
307The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
308Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
309Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
310Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
311Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition
312Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
313Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
314Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
315AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
316Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
317Optical display film as flexible and light trapping substrate for organic photovoltaics
318In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
319Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition
320Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
321Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
322Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
323Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition
324Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
325Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
326Nitride memristors
327In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
328Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
329Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
330Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
331Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
332Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
333Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
334Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
335Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
336Radical Enhanced Atomic Layer Deposition of Metals and Oxides
337Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
338Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
339Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
340Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
341New materials for memristive switching
342Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
343Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
344Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
345Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
346Advances in the fabrication of graphene transistors on flexible substrates
347Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
348Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
349Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
350Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
351Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
352Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
353Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
354Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
355First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
356TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
357Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
358Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
359Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
360Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
361Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
362Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
363Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
364Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
365AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
366N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
367Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
368Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
369Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy
370Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
371Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
372Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
373Experimental verification of electro-refractive phase modulation in graphene
374Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
375Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
376AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
377Trapped charge densities in Al2O3-based silicon surface passivation layers
378Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
379A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
380Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
381Impact of interface materials on side permeation in indirect encapsulation of organic electronics
382Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
383Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
384Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
385Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
386Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
387Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
388Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
389Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
390High-efficiency embedded transmission grating
391Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
392Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
393Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
394Densification of Thin Aluminum Oxide Films by Thermal Treatments
395Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
396Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
397Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
398Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
399Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
400Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
401Silicon surface passivation with atomic layer deposited aluminum nitride
402Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
403High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
404Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
405Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
406Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
407Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
408Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
409Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
410Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition
411Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
412Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
413Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
414Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
415Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
416Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
417Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
418Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
419Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
420Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
421Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
422Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
423Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
424Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
425AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
426Fast PEALD ZnO Thin-Film Transistor Circuits
427Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
428823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
429Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
430Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
431Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
432Anti-stiction coating for mechanically tunable photonic crystal devices
433Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
434Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
435Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
436Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
437Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
438Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
439The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
440Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
441Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
442Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
443Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
444RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
445Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
446Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
447Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
448Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
449Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
450Encapsulation method for atom probe tomography analysis of nanoparticles
451Low-Power Double-Gate ZnO TFT Active Rectifier
452Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
453Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
454Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
455High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
456Atomic layer epitaxy for quantum well nitride-based devices
457Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
458Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
459Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
460Hafnia and alumina on sulphur passivated germanium
461Radical Enhanced Atomic Layer Deposition of Metals and Oxides
462Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
463Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
464Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
465Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
466Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
467Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
468An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
469Study on the characteristics of aluminum thin films prepared by atomic layer deposition
470Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
471Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
472Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
473Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
474Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
475In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition
476Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
477Structural and optical characterization of low-temperature ALD crystalline AlN
478Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
479Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
480Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
481Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
482Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
483Breakdown and Protection of ALD Moisture Barrier Thin Films
484Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
485Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
486Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
487Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
488Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
489Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
490Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
491Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
492Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
493Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
494In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
495Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
496Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
497Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
498Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
499Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
500High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
501Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
502Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
503Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
504Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
50546-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
506A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
507Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
508Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
509Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
510Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
511Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
512Tribological properties of thin films made by atomic layer deposition sliding against silicon
513Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
514Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
515Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
516Damage evaluation in graphene underlying atomic layer deposition dielectrics
517Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
518Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
519Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
520Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
521Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
522Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
523Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
524Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors
525Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
526Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
527A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
528Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
529Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
530AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
531Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
532Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
533Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
534Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
535Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
536Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
537Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
538Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
539A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
540Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
541Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
542Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
543Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
544Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
545Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
546Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
547Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
548Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
549PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
550Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
551Nitride passivation of the interface between high-k dielectrics and SiGe
552Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
553Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
554Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
555Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
556Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
557Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
558Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
559AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
560Fast Flexible Plastic Substrate ZnO Circuits
561Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
562Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
563Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
564Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
565Propagation Effects in Carbon Nanoelectronics
566Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
567A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
568Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
569Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
570Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
571ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
572Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
573Energy-enhanced atomic layer deposition for more process and precursor versatility
574Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
575Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
576The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
577Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
578Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
579Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
580Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
581Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
582Optical in situ monitoring of plasma-enhanced atomic layer deposition process
583Mechanical properties of thin-film Parylene-metal-Parylene devices
584On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
585Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
586Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
587Protective capping and surface passivation of III-V nanowires by atomic layer deposition
588Passivation effects of atomic-layer-deposited aluminum oxide
589Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
590Protective capping and surface passivation of III-V nanowires by atomic layer deposition
591Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
592Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
593Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
594Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures