TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorRegionLink
1EpiValence🇬🇧Aluminium trimethyl
2Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum 97%
3Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
4American Elements🇺🇸Trimethylaluminum
5Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum packaged for use in deposition systems
6DOCK/CHEMICALS🇩🇪Trimethylaluminum
7Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in high-temp 50 ml cylinder for CVD/ALD
8Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
9Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al)
10Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
11Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98% (Material sold in non-returnable cylinder)
12Pegasus Chemicals🇬🇧Trimethylaluminium

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 595 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
2Radical Enhanced Atomic Layer Deposition of Metals and Oxides
3Study on the characteristics of aluminum thin films prepared by atomic layer deposition
4Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
5Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
6Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
7Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
8Encapsulation method for atom probe tomography analysis of nanoparticles
9Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
10'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
111D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
1246-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
13A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
14A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
15A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
16A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
17A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer
18A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
19A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
20AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
21Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
22Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
23Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers
24Advances in the fabrication of graphene transistors on flexible substrates
25Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
26Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
27Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
28Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
29Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
30ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
31AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
32AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
33AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
34AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
35AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
36Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
37Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
38Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
39Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
40An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
41Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
42Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
43Anti-stiction coating for mechanically tunable photonic crystal devices
44Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
45Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
46Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
47Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
48Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films
49Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
50Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
51Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
52Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
53Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
54Atomic layer deposition of metal-oxide thin films on cellulose fibers
55Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
56Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
57Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
58Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
59Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
60AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
61Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
62Band alignment of Al2O3 with (-201) β-Ga2O3
63Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
64Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
65Breakdown and Protection of ALD Moisture Barrier Thin Films
66Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
67Capacitance spectroscopy of gate-defined electronic lattices
68Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
69Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
70Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
71Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
72Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
73Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
74Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
75Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
76Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
77Charge effects of ultrafine FET with nanodot type floating gate
78Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
79Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
80Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
81Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
82Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
83Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
84Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
85Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
86Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
87Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
88Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
89Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
90Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
91Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
92Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
93Damage evaluation in graphene underlying atomic layer deposition dielectrics
94DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
95Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
96Densification of Thin Aluminum Oxide Films by Thermal Treatments
97Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
98Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
99Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
100DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
101Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
102Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
103Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
104Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
105Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
106Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
107Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
108Dynamic tuning of plasmon resonance in the visible using graphene
109Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
110Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
111Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
112Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
113Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
114Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
115Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
116Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
117Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
118Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
119Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
120Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
121Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
122Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
123Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
124Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
125Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
126Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
127Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
128Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
129Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
130Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
131Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
132Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
133Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
134Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
135Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
136Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
137Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
138Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
139Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
140Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
141Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
142Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
143Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
144Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
145Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
146Energy-enhanced atomic layer deposition for more process and precursor versatility
147Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
148Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
149Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
150Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition
151Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
152Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
153Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
154Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
155Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
156Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
157Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
158Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
159Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
160Experimental verification of electro-refractive phase modulation in graphene
161Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
162Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
163Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
164Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
165Fast Flexible Plastic Substrate ZnO Circuits
166Fast PEALD ZnO Thin-Film Transistor Circuits
167Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
168Fiber-matrix interface reinforcement using Atomic Layer Deposition
169Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
170Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
171Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
172Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
173Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
174First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
175Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
176Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
177Flexible, light trapping substrates for organic photovoltaics
178Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
179Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
180Gate Insulator for High Mobility Oxide TFT
181Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
182Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
183Hafnia and alumina on sulphur passivated germanium
184High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
185High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
186High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
187High-efficiency embedded transmission grating
188High-Reflective Coatings For Ground and Space Based Applications
189High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
190Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
191Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
192Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
193Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
194Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
195Impact of interface materials on side permeation in indirect encapsulation of organic electronics
196Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
197Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
198Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
199Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
200Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
201Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
202Improved understanding of recombination at the Si/Al2O3 interface
203Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
204Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
205Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
206Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
207Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
208Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
209In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
210In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
211In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition
212In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
213In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
214Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
215Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
216Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
217Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
218Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
219Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
220Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
221Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
222Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
223Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
224Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
225Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
226Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
227Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
228Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
229Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
230Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
231Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
232Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
233Innovative remote plasma source for atomic layer deposition for GaN devices
234Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
235Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
236Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
237Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
238Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
239Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
240Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
241Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
242Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
243Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
244Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
245Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
246Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
247Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
248Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
249Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
250Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
251Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
252Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
253Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
254Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
255Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
256Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
257Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
258Lithium-Iron (III) Fluoride Battery with Double Surface Protection
259Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
260Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
261Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
262Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
263Low-Power Double-Gate ZnO TFT Active Rectifier
264Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
265Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
266Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
267Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
268MANOS performance dependence on ALD Al2O3 oxidation source
269Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
270Mechanical properties of thin-film Parylene-metal-Parylene devices
271Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
272Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
273Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
274Method of Fabrication for Encapsulated Polarizing Resonant Gratings
275Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
276Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
277Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
278Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
279Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
280Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
281Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
282MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
283Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
284N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
285Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
286Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
287Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
288Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
289Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
290Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
291Nitride passivation of the interface between high-k dielectrics and SiGe
292Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
293Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
294Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
295Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
296On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
297On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
298On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
299On the equilibrium concentration of boron-oxygen defects in crystalline silicon
300On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
301On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
302Optical display film as flexible and light trapping substrate for organic photovoltaics
303Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
304Optical in situ monitoring of plasma-enhanced atomic layer deposition process
305Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
306Optimization of the Surface Structure on Black Silicon for Surface Passivation
307Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
308Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
309Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
310Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
311Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
312Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
313Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
314Passivation effects of atomic-layer-deposited aluminum oxide
315Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
316Patterned deposition by plasma enhanced spatial atomic layer deposition
317PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
318Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
319Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
320Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
321Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
322Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
323Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
324Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
325Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
326Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
327Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
328Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
329Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
330Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
331Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
332Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
333Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
334Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
335Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
336Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
337Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
338Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
339Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
340Propagation Effects in Carbon Nanoelectronics
341Protective capping and surface passivation of III-V nanowires by atomic layer deposition
342Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
343Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
344Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
345Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
346Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
347Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
348Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
349Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
350Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
351Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
352RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
353Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition
354Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
355Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
356Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
357Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
358Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
359Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
360Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
361Single-Cell Photonic Nanocavity Probes
362Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
363Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
364Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
365Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
366Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
367Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
368Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
369Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
370Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
371Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
372Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources
373Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
374Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
375Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
376Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
377Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
378Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
379Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
380Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
381Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
382Symmetrical Al2O3-based passivation layers for p- and n-type silicon
383Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
384Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
385Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
386The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
387The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
388The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
389The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
390Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
391Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
392Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition
393Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
394Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
395TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
396Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
397Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
398Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
399Trapped charge densities in Al2O3-based silicon surface passivation layers
400Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
401Tribological properties of thin films made by atomic layer deposition sliding against silicon
402Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
403Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
404Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
405Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
406Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
407Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
408Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
409Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
410Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
411Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
412Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
413Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
414Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
415Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
416Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
417Very high frequency plasma reactant for atomic layer deposition
418Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
419Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
420Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
421Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
422Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
423Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
424Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma
425Atomic layer epitaxy for quantum well nitride-based devices
426Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
427Perspectives on future directions in III-N semiconductor research
428Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
429823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
430A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
431A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
432A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
433ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
434AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
435AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
436AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
437AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
438Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
439Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
440Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
441Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
442Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
443Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
444Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
445Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
446Atomic layer epitaxy for quantum well nitride-based devices
447Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
448Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
449Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
450Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
451Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
452Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
453Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
454Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
455Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
456Crystalline growth of AlN thin films by atomic layer deposition
457Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
458Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
459Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
460Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
461Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
462Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
463Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
464Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
465Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
466Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
467GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
468GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
469Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
470Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
471Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
472Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
473Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
474Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
475High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
476High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
477High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
478Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
479Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
480Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
481Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
482Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
483Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
484Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
485Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
486Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
487Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
488Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
489New materials for memristive switching
490Nitride memristors
491Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
492Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
493PEALD AlN: controlling growth and film crystallinity
494PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
495Perspectives on future directions in III-N semiconductor research
496Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
497Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
498Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
499Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
500Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
501Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
502Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
503Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
504Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
505Properties of AlN grown by plasma enhanced atomic layer deposition
506Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
507Protective capping and surface passivation of III-V nanowires by atomic layer deposition
508Radical Enhanced Atomic Layer Deposition of Metals and Oxides
509Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
510Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
511Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
512Silicon surface passivation with atomic layer deposited aluminum nitride
513Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
514Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
515Structural and optical characterization of low-temperature ALD crystalline AlN
516Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
517Sub-nanometer heating depth of atomic layer annealing
518Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
519Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
520Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
521Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
522The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
523The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
524Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
525Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
526TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
527Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
528XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
529Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
530Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
531Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
532Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
533Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
534Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
535Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
536Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
537Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
538Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
539Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
540Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
541Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
542Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
543Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
544Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
545Plasma enhanced atomic layer deposition of aluminum sulfide thin films
546Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
547Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
548Composite materials and nanoporous thin layers made by atomic layer deposition
549Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
550Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
551Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
552Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
553Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
554Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
555Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
556Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
557Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
558Optical and Electrical Properties of AlxTi1-xO Films
559Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
560Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
561Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
562Breakdown and Protection of ALD Moisture Barrier Thin Films
563Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
564A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
565Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
566Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
567The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
568Tuning size and coverage of Pd nanoparticles using atomic layer deposition
569Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
570Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
571Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
572Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
573Tribological properties of thin films made by atomic layer deposition sliding against silicon
574Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
575Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
576Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition