TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Trimethylaluminum, min. 98%
2Strem Chemicals, Inc.Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
3Strem Chemicals, Inc.Trimethylaluminum, min. 98%, contained in high-temp 50 ml cylinder for CVD/ALD
4Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al)
5Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
6Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
7EpiValenceAluminium trimethyl

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 481 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
2Radical Enhanced Atomic Layer Deposition of Metals and Oxides
3Study on the characteristics of aluminum thin films prepared by atomic layer deposition
4Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
5Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
6Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
7Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
8Encapsulation method for atom probe tomography analysis of nanoparticles
9Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
10'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
111D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
1246-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
13A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
14A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
15A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
16A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
17A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
18A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
19AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
20Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
21Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
22Advances in the fabrication of graphene transistors on flexible substrates
23Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
24Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
25Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
26Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
27Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
28ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
29AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
30AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
31AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
32AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
33AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
34Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
35Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
36Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
37An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
38Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
39Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
40Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
41Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
42Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
43Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
44Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
45Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
46Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
47Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
48AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
49Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
50Band alignment of Al2O3 with (-201) β-Ga2O3
51Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
52Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
53Breakdown and Protection of ALD Moisture Barrier Thin Films
54Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
55Capacitance spectroscopy of gate-defined electronic lattices
56Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
57Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
58Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
59Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
60Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
61Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
62Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
63Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
64Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
65Charge effects of ultrafine FET with nanodot type floating gate
66Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
67Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
68Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
69Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
70Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
71Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
72Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
73Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
74Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
75Damage evaluation in graphene underlying atomic layer deposition dielectrics
76DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
77Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
78Demonstration of flexible thin film transistors with GaN channels
79Densification of Thin Aluminum Oxide Films by Thermal Treatments
80Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
81Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
82Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
83DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
84Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
85Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
86Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
87Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
88Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
89Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
90Dynamic tuning of plasmon resonance in the visible using graphene
91Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
92Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
93Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
94Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
95Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
96Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
97Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
98Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
99Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
100Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
101Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
102Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
103Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
104Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
105Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
106Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
107Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
108Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
109Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
110Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
111Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
112Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
113Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
114Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
115Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
116Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
117Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
118Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
119Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
120Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
121Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
122Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
123Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
124Energy-enhanced atomic layer deposition for more process and precursor versatility
125Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
126Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
127Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
128Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
129Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
130Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
131Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
132Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
133Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
134Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
135Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
136Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
137Experimental verification of electro-refractive phase modulation in graphene
138Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
139Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
140Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
141Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
142Fast Flexible Plastic Substrate ZnO Circuits
143Fast PEALD ZnO Thin-Film Transistor Circuits
144Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
145Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
146Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
147Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
148Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
149Flexible, light trapping substrates for organic photovoltaics
150Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
151Gate Insulator for High Mobility Oxide TFT
152Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
153Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
154Hafnia and alumina on sulphur passivated germanium
155High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
156High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
157High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
158High-efficiency embedded transmission grating
159High-Reflective Coatings For Ground and Space Based Applications
160Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
161Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
162Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
163Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
164Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
165Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
166Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
167Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
168Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
169Improved understanding of recombination at the Si/Al2O3 interface
170Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
171Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
172Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
173Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
174Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
175Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
176In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
177In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
178In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
179Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
180Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
181Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
182Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
183Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
184Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
185Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
186Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
187Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
188Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
189Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
190Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
191Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
192Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
193Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
194Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
195Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
196Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
197Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
198Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
199Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
200Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
201Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
202Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
203Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
204Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
205Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
206Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
207Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
208Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
209Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
210Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
211Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
212Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
213Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
214Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
215Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
216Low-Power Double-Gate ZnO TFT Active Rectifier
217Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
218Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
219Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
220Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
221MANOS performance dependence on ALD Al2O3 oxidation source
222Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
223Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
224Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
225Method of Fabrication for Encapsulated Polarizing Resonant Gratings
226Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
227Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
228Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
229Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
230Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
231Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
232Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
233N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
234Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
235Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
236Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
237Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
238Nitride passivation of the interface between high-k dielectrics and SiGe
239Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
240Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
241Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
242On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
243On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
244On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
245On the equilibrium concentration of boron-oxygen defects in crystalline silicon
246On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
247Optical display film as flexible and light trapping substrate for organic photovoltaics
248Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
249Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
250Optimization of the Surface Structure on Black Silicon for Surface Passivation
251Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
252Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
253Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
254Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
255Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
256Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
257Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
258Passivation effects of atomic-layer-deposited aluminum oxide
259Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
260Patterned deposition by plasma enhanced spatial atomic layer deposition
261PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
262Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
263Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
264Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
265Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
266Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
267Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
268Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
269Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
270Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
271Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
272Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
273Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
274Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
275Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
276Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
277Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
278Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
279Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
280Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
281Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
282Propagation Effects in Carbon Nanoelectronics
283Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
284Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
285Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
286Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
287Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
288Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
289Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
290Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
291Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
292RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
293Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
294Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
295Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
296Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
297Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
298Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
299Single-Cell Photonic Nanocavity Probes
300Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
301Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
302Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
303Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
304Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
305Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
306Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
307Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
308Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
309Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
310Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
311Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
312Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
313Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
314Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
315Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
316Symmetrical Al2O3-based passivation layers for p- and n-type silicon
317Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
318Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
319Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
320The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
321The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
322The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
323Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
324Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
325Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
326Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
327TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
328Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
329Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
330Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
331Trapped charge densities in Al2O3-based silicon surface passivation layers
332Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
333Tribological properties of thin films made by atomic layer deposition sliding against silicon
334Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
335Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
336Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
337Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
338Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
339Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
340Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
341Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
342Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
343Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
344Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
345Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
346Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
347Very high frequency plasma reactant for atomic layer deposition
348Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
349Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
350Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
351Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
352Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
353Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
354Atomic layer epitaxy for quantum well nitride-based devices
355Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
356Perspectives on future directions in III-N semiconductor research
357Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
358A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
359ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
360AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
361AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
362Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
363Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
364Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
365Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
366Atomic layer epitaxy for quantum well nitride-based devices
367Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
368Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
369Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
370Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
371Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
372Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
373Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
374Crystalline growth of AlN thin films by atomic layer deposition
375Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
376Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
377Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
378Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
379Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
380Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
381Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
382Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
383GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
384GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
385Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
386Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
387Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
388Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
389Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
390Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
391High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
392High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
393High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
394Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
395Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
396Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
397Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
398Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
399Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
400Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
401Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
402Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
403Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
404Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
405Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
406Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
407New materials for memristive switching
408Nitride memristors
409Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
410Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
411Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
412PEALD AlN: controlling growth and film crystallinity
413PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
414Perspectives on future directions in III-N semiconductor research
415Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
416Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
417Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
418Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
419Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
420Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
421Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
422Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
423Properties of AlN grown by plasma enhanced atomic layer deposition
424Radical Enhanced Atomic Layer Deposition of Metals and Oxides
425Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
426Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
427Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
428Silicon surface passivation with atomic layer deposited aluminum nitride
429Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
430Structural and optical characterization of low-temperature ALD crystalline AlN
431Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
432Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
433Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
434Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
435The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
436The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
437Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
438Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
439TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
440XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
441Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
442Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
443Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
444Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
445Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
446Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
447Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
448Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
449Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
450Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
451Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
452Plasma enhanced atomic layer deposition of aluminum sulfide thin films
453Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
454Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
455Composite materials and nanoporous thin layers made by atomic layer deposition
456Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
457Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
458Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
459Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
460Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
461Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
462Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
463Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
464Optical and Electrical Properties of AlxTi1-xO Films
465Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
466Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
467Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
468Breakdown and Protection of ALD Moisture Barrier Thin Films
469Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
470A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
471Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
472Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
473The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
474Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
475Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
476Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
477Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
478Tribological properties of thin films made by atomic layer deposition sliding against silicon
479Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
480Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
481Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition


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