TMA, AlMe3, Trimethyl Aluminum, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al)
2Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
3Strem Chemicals, Inc.Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
4Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
5Strem Chemicals, Inc.Trimethylaluminum, min. 98%, contained in high-temp 50 ml cylinder for CVD/ALD
6Strem Chemicals, Inc.Trimethylaluminum, min. 98% (Material sold in non-returnable cylinder)

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 549 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
2Radical Enhanced Atomic Layer Deposition of Metals and Oxides
3Study on the characteristics of aluminum thin films prepared by atomic layer deposition
4Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
5Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
6Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
7Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
8Encapsulation method for atom probe tomography analysis of nanoparticles
9Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
10'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
111D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
1246-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
13A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
14A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
15A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
16A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
17A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
18A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
19AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
20Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
21Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
22Advances in the fabrication of graphene transistors on flexible substrates
23Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
24Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
25Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
26Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
27Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
28ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
29AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
30AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
31AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
32AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
33AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
34Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
35Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
36Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
37An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
38Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
39Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
40Anti-stiction coating for mechanically tunable photonic crystal devices
41Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
42Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
43Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
44Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
45Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
46Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
47Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
48Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
49Atomic layer deposition of metal-oxide thin films on cellulose fibers
50Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
51Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
52Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
53AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
54Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
55Band alignment of Al2O3 with (-201) β-Ga2O3
56Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
57Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
58Breakdown and Protection of ALD Moisture Barrier Thin Films
59Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
60Capacitance spectroscopy of gate-defined electronic lattices
61Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
62Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
63Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
64Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
65Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
66Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
67Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
68Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
69Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
70Charge effects of ultrafine FET with nanodot type floating gate
71Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
72Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
73Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
74Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
75Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
76Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
77Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
78Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
79Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
80Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
81Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
82Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
83Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
84Damage evaluation in graphene underlying atomic layer deposition dielectrics
85DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
86Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
87Densification of Thin Aluminum Oxide Films by Thermal Treatments
88Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
89Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
90Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
91DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
92Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
93Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
94Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
95Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
96Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
97Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
98Dynamic tuning of plasmon resonance in the visible using graphene
99Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
100Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
101Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
102Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
103Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
104Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
105Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
106Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
107Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
108Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
109Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
110Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
111Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
112Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
113Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
114Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
115Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
116Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
117Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
118Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
119Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
120Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
121Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
122Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
123Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
124Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
125Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
126Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
127Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
128Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
129Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
130Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
131Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
132Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
133Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
134Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
135Energy-enhanced atomic layer deposition for more process and precursor versatility
136Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
137Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
138Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
139Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
140Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
141Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
142Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
143Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
144Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
145Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
146Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
147Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
148Experimental verification of electro-refractive phase modulation in graphene
149Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
150Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
151Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
152Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
153Fast Flexible Plastic Substrate ZnO Circuits
154Fast PEALD ZnO Thin-Film Transistor Circuits
155Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
156Fiber-matrix interface reinforcement using Atomic Layer Deposition
157Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
158Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
159Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
160Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
161First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
162Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
163Flexible, light trapping substrates for organic photovoltaics
164Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
165Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
166Gate Insulator for High Mobility Oxide TFT
167Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
168Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
169Hafnia and alumina on sulphur passivated germanium
170High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
171High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
172High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
173High-efficiency embedded transmission grating
174High-Reflective Coatings For Ground and Space Based Applications
175High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
176Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
177Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
178Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
179Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
180Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
181Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
182Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
183Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
184Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
185Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
186Improved understanding of recombination at the Si/Al2O3 interface
187Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
188Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
189Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
190Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
191Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
192Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
193In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
194In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
195In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
196In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
197Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
198Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
199Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
200Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
201Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
202Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
203Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
204Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
205Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
206Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
207Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
208Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
209Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
210Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
211Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
212Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
213Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
214Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
215Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
216Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
217Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
218Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
219Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
220Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
221Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
222Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
223Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
224Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
225Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
226Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
227Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
228Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
229Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
230Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
231Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
232Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
233Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
234Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
235Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
236Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
237Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
238Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
239Lithium-Iron (III) Fluoride Battery with Double Surface Protection
240Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
241Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
242Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
243Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
244Low-Power Double-Gate ZnO TFT Active Rectifier
245Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
246Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
247Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
248Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
249MANOS performance dependence on ALD Al2O3 oxidation source
250Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
251Mechanical properties of thin-film Parylene-metal-Parylene devices
252Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
253Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
254Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
255Method of Fabrication for Encapsulated Polarizing Resonant Gratings
256Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
257Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
258Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
259Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
260Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
261Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
262Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
263MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
264Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
265N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
266Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
267Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
268Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
269Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
270Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
271Nitride passivation of the interface between high-k dielectrics and SiGe
272Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
273Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
274Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
275Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
276On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
277On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
278On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
279On the equilibrium concentration of boron-oxygen defects in crystalline silicon
280On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
281Optical display film as flexible and light trapping substrate for organic photovoltaics
282Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
283Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
284Optimization of the Surface Structure on Black Silicon for Surface Passivation
285Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
286Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
287Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
288Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
289Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
290Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
291Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
292Passivation effects of atomic-layer-deposited aluminum oxide
293Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
294Patterned deposition by plasma enhanced spatial atomic layer deposition
295PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
296Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
297Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
298Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
299Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
300Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
301Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
302Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
303Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
304Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
305Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
306Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
307Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
308Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
309Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
310Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
311Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
312Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
313Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
314Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
315Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
316Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
317Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
318Propagation Effects in Carbon Nanoelectronics
319Protective capping and surface passivation of III-V nanowires by atomic layer deposition
320Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
321Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
322Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
323Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
324Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
325Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
326Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
327Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
328Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
329Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
330RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
331Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
332Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
333Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
334Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
335Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
336Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
337Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
338Single-Cell Photonic Nanocavity Probes
339Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
340Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
341Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
342Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
343Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
344Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
345Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
346Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
347Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
348Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
349Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
350Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
351Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
352Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
353Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
354Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
355Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
356Symmetrical Al2O3-based passivation layers for p- and n-type silicon
357Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
358Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
359Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
360The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
361The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
362The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
363Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
364Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
365Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
366Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
367TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
368Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
369Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
370Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
371Trapped charge densities in Al2O3-based silicon surface passivation layers
372Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
373Tribological properties of thin films made by atomic layer deposition sliding against silicon
374Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
375Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
376Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
377Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
378Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
379Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
380Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
381Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
382Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
383Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
384Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
385Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
386Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
387Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
388Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
389Very high frequency plasma reactant for atomic layer deposition
390Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
391Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
392Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
393Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
394Atomic layer epitaxy for quantum well nitride-based devices
395Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
396Perspectives on future directions in III-N semiconductor research
397Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
398823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
399A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
400A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
401ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
402AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
403AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
404AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
405Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
406Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
407Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
408Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
409Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
410Atomic layer epitaxy for quantum well nitride-based devices
411Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
412Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
413Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
414Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
415Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
416Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
417Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
418Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
419Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
420Crystalline growth of AlN thin films by atomic layer deposition
421Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
422Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
423Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
424Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
425Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
426Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
427Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
428Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
429Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
430GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
431GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
432Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
433Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
434Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
435Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
436Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
437Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
438High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
439High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
440High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
441Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
442Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
443Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
444Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
445Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
446Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
447Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
448Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
449Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
450Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
451New materials for memristive switching
452Nitride memristors
453Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
454Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
455PEALD AlN: controlling growth and film crystallinity
456PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
457Perspectives on future directions in III-N semiconductor research
458Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
459Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
460Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
461Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
462Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
463Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
464Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
465Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
466Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
467Properties of AlN grown by plasma enhanced atomic layer deposition
468Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
469Protective capping and surface passivation of III-V nanowires by atomic layer deposition
470Radical Enhanced Atomic Layer Deposition of Metals and Oxides
471Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
472Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
473Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
474Silicon surface passivation with atomic layer deposited aluminum nitride
475Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
476Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
477Structural and optical characterization of low-temperature ALD crystalline AlN
478Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
479Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
480Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
481Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
482The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
483The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
484Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
485Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
486TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
487XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
488Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
489Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
490Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
491Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
492Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
493Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
494Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
495Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
496Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
497Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
498Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
499Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
500Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
501Plasma enhanced atomic layer deposition of aluminum sulfide thin films
502Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
503Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
504Composite materials and nanoporous thin layers made by atomic layer deposition
505Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
506Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
507Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
508Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
509Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
510Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
511Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
512Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
513Optical and Electrical Properties of AlxTi1-xO Films
514Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
515Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
516Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
517Breakdown and Protection of ALD Moisture Barrier Thin Films
518Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
519A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
520Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
521Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
522The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
523Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
524Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
525Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
526Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
527Tribological properties of thin films made by atomic layer deposition sliding against silicon
528Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
529Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
530Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition


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