TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorRegionLink
1DOCK/CHEMICALS🇩🇪Trimethylaluminum
2Pegasus Chemicals🇬🇧Trimethylaluminium
3Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
4Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in high-temp cylinder
5Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum packaged for use in deposition systems
6Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al) PURATREM
7Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98% (Material sold in non-returnable cylinder)
8Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum 97%
9EpiValence🇬🇧Aluminium trimethyl
10American Elements🇺🇸Trimethylaluminum
11Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
12Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 604 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
2Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
3Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
4ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
5Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
6Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films
7Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
8Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
9Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
10AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
11Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
12Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
13Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
14On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
15Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
16Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
17Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
18Sub-nanometer heating depth of atomic layer annealing
19Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
20Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition
21Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
22Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
23Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
24Tribological properties of thin films made by atomic layer deposition sliding against silicon
25Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
26Innovative remote plasma source for atomic layer deposition for GaN devices
27Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
28Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
29Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
30Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
31Advances in the fabrication of graphene transistors on flexible substrates
32Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
33Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
34Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
35Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
36Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
37Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
38Densification of Thin Aluminum Oxide Films by Thermal Treatments
39Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
40Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
41Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
42DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
43Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
44Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
45Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
46Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
47Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
48Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
49A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
50Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
51Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
52Optimization of the Surface Structure on Black Silicon for Surface Passivation
53Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
54A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
55Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
56Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
57Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
58Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
59On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
60Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
61High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
62Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
63Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
64Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
65Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
66The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
67Damage evaluation in graphene underlying atomic layer deposition dielectrics
68Hafnia and alumina on sulphur passivated germanium
69Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
70High-efficiency embedded transmission grating
71Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
72Passivation effects of atomic-layer-deposited aluminum oxide
73Method of Fabrication for Encapsulated Polarizing Resonant Gratings
74Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
75Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
76Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
77Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
78RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
79Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
80Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
81High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
82Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
83Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma
84Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
85Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
86Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
87Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
88Experimental verification of electro-refractive phase modulation in graphene
89Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
90Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
91Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
92Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
93Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
94Anti-stiction coating for mechanically tunable photonic crystal devices
95Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
96Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
97Encapsulation method for atom probe tomography analysis of nanoparticles
98The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
99GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
100Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
101Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
102Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
103Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
104Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
105Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
106Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
107Mechanical properties of thin-film Parylene-metal-Parylene devices
108Very high frequency plasma reactant for atomic layer deposition
109Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
110Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
111Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
112Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
113The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
114Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
115Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
116Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
117In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
118Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
119Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
120Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
121Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
122Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
123Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
124Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
125Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition
126Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
127Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
128Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
129Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
130Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
131Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
132Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
133Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
134Patterned deposition by plasma enhanced spatial atomic layer deposition
135Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
136The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
137Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
138Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
139Properties of AlN grown by plasma enhanced atomic layer deposition
140Tribological properties of thin films made by atomic layer deposition sliding against silicon
141Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
142Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
143Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
144Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
145Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
146Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
147Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
148PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
149Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
150Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
151Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
152Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
153Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
154Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition
155Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
156Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
157Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
158In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition
159AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
160Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
161Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
162Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
163Optical in situ monitoring of plasma-enhanced atomic layer deposition process
164Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
165Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
166Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
167Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
168Protective capping and surface passivation of III-V nanowires by atomic layer deposition
169Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
170Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
171Study on the characteristics of aluminum thin films prepared by atomic layer deposition
172Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
173Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
174Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
175Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
176First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
177Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
178Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
179Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
180Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources
181Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
182Perspectives on future directions in III-N semiconductor research
183Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
184Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
185In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
186Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
187Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
188Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
189ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
190Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
191Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
192Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
193Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
194Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
195Fast PEALD ZnO Thin-Film Transistor Circuits
196Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
197Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
198Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
199Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
200Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
201Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
202Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
203Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
204Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
205On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
206Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
207Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
208Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
209Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
210Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
211Tuning size and coverage of Pd nanoparticles using atomic layer deposition
212A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer
213Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
214Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
215Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
216Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
217Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
218Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
219Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
220Atomic layer deposition of metal-oxide thin films on cellulose fibers
221Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
22246-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
223Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
224Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
225N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
226Optical display film as flexible and light trapping substrate for organic photovoltaics
227Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
228Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
229Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
230Radical Enhanced Atomic Layer Deposition of Metals and Oxides
231Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
232Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
233Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
234Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
235Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
236Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
237Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
238Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
239Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
240Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
241Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
242Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
243Crystalline growth of AlN thin films by atomic layer deposition
244Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
245Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
246A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
247Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
248Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition
249Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
250Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
251Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
252Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
253High-Reflective Coatings For Ground and Space Based Applications
254Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
255Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
256Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
257Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
258Residual stress study of thin films deposited by atomic layer deposition
259Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
260The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
261Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
262Atomic layer epitaxy for quantum well nitride-based devices
263Energy-enhanced atomic layer deposition for more process and precursor versatility
264A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
265Gate Insulator for High Mobility Oxide TFT
266Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
267Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
268Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
269Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
270GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
271Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
272AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
273Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
274Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
275Dynamic tuning of plasmon resonance in the visible using graphene
276Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
277AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
278Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
279Plasma enhanced atomic layer deposition of aluminum sulfide thin films
280Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
281MANOS performance dependence on ALD Al2O3 oxidation source
282Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
283Symmetrical Al2O3-based passivation layers for p- and n-type silicon
284On the equilibrium concentration of boron-oxygen defects in crystalline silicon
285Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
286AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
287Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
288Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
289Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
290Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
291Trapped charge densities in Al2O3-based silicon surface passivation layers
292Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
293Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
294Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
295Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
296Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
297Breakdown and Protection of ALD Moisture Barrier Thin Films
298Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
299Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
300Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
301Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
302Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
303Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
304Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
305Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
306Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth
307Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
308Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
309Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
310PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
311Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
312Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
313Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
314Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
315Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
316Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
317Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
318Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
319Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
320Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
321Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
322Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
323Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
324Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
325DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
326Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
327Charge effects of ultrafine FET with nanodot type floating gate
328Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
329Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
330A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
331Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
332Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
333Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
334AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
335Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
336Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
337Silicon surface passivation with atomic layer deposited aluminum nitride
338Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
339TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
340Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
341Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
342Structural and optical characterization of low-temperature ALD crystalline AlN
343Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
344Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
345Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
346Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
347Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
348TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
349Perspectives on future directions in III-N semiconductor research
350Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
351Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
352Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
353Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
354Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
355Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
356Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
357Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
358Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
359Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
360Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
361Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
362Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
363A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
364Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
365Band alignment of Al2O3 with (-201) β-Ga2O3
366Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
367High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
368Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
369Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
370The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
371Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
372Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
373Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
374Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
375AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
376Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
377New materials for memristive switching
378Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
379Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
380In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
381Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
382Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
383High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
384A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
385Nitride passivation of the interface between high-k dielectrics and SiGe
386Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
387Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
388Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
389Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
390Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
391Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
392Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
393Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
394Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
395Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
396Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
397Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
398MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
399Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
400Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
401Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
402AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
403In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
404Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
405AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
406Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
407Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
408Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
409Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
410Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
411Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
412Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
413Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
414AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
415Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
416Capacitance spectroscopy of gate-defined electronic lattices
417Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
418Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
419Single-Cell Photonic Nanocavity Probes
420Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
421Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
422Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
423Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
424Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
425High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
426Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
427Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
428Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
429Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
430Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
431'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
432Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
433Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
434Nitride memristors
435Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
436Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
437Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
438An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
439Fiber-matrix interface reinforcement using Atomic Layer Deposition
440Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
441Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
442High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
443Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
444Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
445Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
446Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
447Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
448Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
449Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
450Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
451Protective capping and surface passivation of III-V nanowires by atomic layer deposition
452Improved understanding of recombination at the Si/Al2O3 interface
453Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
454Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers
455Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
456823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
457Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
458Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
459Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
460Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
461Composite materials and nanoporous thin layers made by atomic layer deposition
462Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
463Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
464On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
465Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
466Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
467Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
468Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
469Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
470Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
471Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
472Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
473Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
474Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
475Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
476Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
477Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
478Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
479Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
480Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
481Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
482A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
483Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
484Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
485Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
486On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
487Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
488Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
489Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
490Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
491Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
492High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
493Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
494Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
495Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
496Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
497A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
498Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
499Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
500Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
501Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
502Fast Flexible Plastic Substrate ZnO Circuits
503Low-Power Double-Gate ZnO TFT Active Rectifier
504A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
505Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
506Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
507Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
508Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
509Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
510Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
511Atomic layer epitaxy for quantum well nitride-based devices
512Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
513Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
514Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
515Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
516Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
517Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
518Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
519Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
520Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
521Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
522Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
523Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
524Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
525Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
526Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
527Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
528Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
529Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
530Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
531Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
532Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
533Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
534Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
535Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
536Flexible, light trapping substrates for organic photovoltaics
537Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
538Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
539Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
540Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
541Optical and Electrical Properties of AlxTi1-xO Films
542Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
543Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
544Lithium-Iron (III) Fluoride Battery with Double Surface Protection
545Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
546Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
547Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
5481D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
549Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
550Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
551Propagation Effects in Carbon Nanoelectronics
552Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
553Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
554Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
555Radical Enhanced Atomic Layer Deposition of Metals and Oxides
556Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
557AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
558Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
559Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
560Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
561Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
562Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
563Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
564Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
565Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
566The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
567Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
568Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
569Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
570Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
571Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
572Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
573Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
574Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
575XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
576Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
577Breakdown and Protection of ALD Moisture Barrier Thin Films
578Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
579Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
580Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
581PEALD AlN: controlling growth and film crystallinity
582Impact of interface materials on side permeation in indirect encapsulation of organic electronics
583Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
584Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
585Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure