TMA, AlMe3, Trimethyl Aluminum, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
2Strem Chemicals, Inc.Trimethylaluminum, min. 98% (Material sold in non-returnable cylinder)
3Strem Chemicals, Inc.Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
4Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
5Sigma-Aldrich, Co. LLCTrimethylaluminum 97%
6Strem Chemicals, Inc.Trimethylaluminum, min. 98%, contained in high-temp 50 ml cylinder for CVD/ALD
7Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al)

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 561 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
2Radical Enhanced Atomic Layer Deposition of Metals and Oxides
3Study on the characteristics of aluminum thin films prepared by atomic layer deposition
4Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
5Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
6Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
7Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
8Encapsulation method for atom probe tomography analysis of nanoparticles
9Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
10'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
111D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
1246-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
13A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
14A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
15A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
16A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
17A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
18A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
19AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
20Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
21Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
22Advances in the fabrication of graphene transistors on flexible substrates
23Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
24Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
25Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
26Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
27Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
28ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
29AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
30AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
31AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
32AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
33AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
34Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
35Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
36Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
37An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
38Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
39Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
40Anti-stiction coating for mechanically tunable photonic crystal devices
41Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
42Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
43Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
44Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
45Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
46Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
47Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
48Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
49Atomic layer deposition of metal-oxide thin films on cellulose fibers
50Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
51Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
52Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
53AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
54Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
55Band alignment of Al2O3 with (-201) β-Ga2O3
56Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
57Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
58Breakdown and Protection of ALD Moisture Barrier Thin Films
59Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
60Capacitance spectroscopy of gate-defined electronic lattices
61Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
62Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
63Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
64Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
65Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
66Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
67Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
68Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
69Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
70Charge effects of ultrafine FET with nanodot type floating gate
71Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
72Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
73Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
74Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
75Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
76Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
77Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
78Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
79Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
80Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
81Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
82Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
83Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
84Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
85Damage evaluation in graphene underlying atomic layer deposition dielectrics
86DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
87Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
88Densification of Thin Aluminum Oxide Films by Thermal Treatments
89Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
90Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
91Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
92DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
93Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
94Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
95Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
96Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
97Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
98Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
99Dynamic tuning of plasmon resonance in the visible using graphene
100Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
101Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
102Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
103Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
104Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
105Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
106Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
107Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
108Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
109Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
110Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
111Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
112Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
113Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
114Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
115Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
116Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
117Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
118Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
119Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
120Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
121Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
122Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
123Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
124Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
125Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
126Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
127Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
128Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
129Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
130Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
131Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
132Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
133Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
134Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
135Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
136Energy-enhanced atomic layer deposition for more process and precursor versatility
137Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
138Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
139Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
140Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
141Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
142Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
143Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
144Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
145Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
146Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
147Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
148Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
149Experimental verification of electro-refractive phase modulation in graphene
150Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
151Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
152Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
153Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
154Fast Flexible Plastic Substrate ZnO Circuits
155Fast PEALD ZnO Thin-Film Transistor Circuits
156Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
157Fiber-matrix interface reinforcement using Atomic Layer Deposition
158Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
159Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
160Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
161Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
162Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
163First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
164Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
165Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
166Flexible, light trapping substrates for organic photovoltaics
167Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
168Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
169Gate Insulator for High Mobility Oxide TFT
170Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
171Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
172Hafnia and alumina on sulphur passivated germanium
173High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
174High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
175High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
176High-efficiency embedded transmission grating
177High-Reflective Coatings For Ground and Space Based Applications
178High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
179Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
180Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
181Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
182Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
183Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
184Impact of interface materials on side permeation in indirect encapsulation of organic electronics
185Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
186Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
187Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
188Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
189Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
190Improved understanding of recombination at the Si/Al2O3 interface
191Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
192Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
193Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
194Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
195Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
196Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
197In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
198In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
199In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
200In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
201Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
202Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
203Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
204Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
205Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
206Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
207Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
208Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
209Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
210Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
211Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
212Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
213Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
214Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
215Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
216Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
217Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
218Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
219Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
220Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
221Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
222Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
223Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
224Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
225Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
226Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
227Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
228Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
229Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
230Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
231Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
232Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
233Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
234Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
235Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
236Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
237Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
238Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
239Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
240Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
241Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
242Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
243Lithium-Iron (III) Fluoride Battery with Double Surface Protection
244Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
245Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
246Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
247Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
248Low-Power Double-Gate ZnO TFT Active Rectifier
249Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
250Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
251Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
252Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
253MANOS performance dependence on ALD Al2O3 oxidation source
254Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
255Mechanical properties of thin-film Parylene-metal-Parylene devices
256Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
257Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
258Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
259Method of Fabrication for Encapsulated Polarizing Resonant Gratings
260Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
261Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
262Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
263Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
264Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
265Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
266Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
267MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
268Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
269N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
270Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
271Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
272Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
273Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
274Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
275Nitride passivation of the interface between high-k dielectrics and SiGe
276Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
277Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
278Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
279Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
280On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
281On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
282On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
283On the equilibrium concentration of boron-oxygen defects in crystalline silicon
284On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
285On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
286Optical display film as flexible and light trapping substrate for organic photovoltaics
287Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
288Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
289Optimization of the Surface Structure on Black Silicon for Surface Passivation
290Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
291Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
292Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
293Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
294Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
295Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
296Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
297Passivation effects of atomic-layer-deposited aluminum oxide
298Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
299Patterned deposition by plasma enhanced spatial atomic layer deposition
300PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
301Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
302Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
303Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
304Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
305Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
306Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
307Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
308Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
309Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
310Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
311Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
312Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
313Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
314Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
315Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
316Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
317Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
318Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
319Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
320Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
321Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
322Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
323Propagation Effects in Carbon Nanoelectronics
324Protective capping and surface passivation of III-V nanowires by atomic layer deposition
325Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
326Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
327Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
328Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
329Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
330Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
331Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
332Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
333Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
334Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
335RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
336Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
337Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
338Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
339Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
340Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
341Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
342Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
343Single-Cell Photonic Nanocavity Probes
344Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
345Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
346Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
347Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
348Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
349Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
350Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
351Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
352Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
353Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
354Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
355Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
356Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
357Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
358Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
359Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
360Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
361Symmetrical Al2O3-based passivation layers for p- and n-type silicon
362Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
363Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
364Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
365The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
366The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
367The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
368Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
369Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
370Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
371Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
372TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
373Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
374Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
375Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
376Trapped charge densities in Al2O3-based silicon surface passivation layers
377Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
378Tribological properties of thin films made by atomic layer deposition sliding against silicon
379Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
380Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
381Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
382Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
383Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
384Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
385Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
386Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
387Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
388Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
389Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
390Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
391Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
392Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
393Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
394Very high frequency plasma reactant for atomic layer deposition
395Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
396Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
397Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
398Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
399Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
400Atomic layer epitaxy for quantum well nitride-based devices
401Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
402Perspectives on future directions in III-N semiconductor research
403Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
404823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
405A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
406A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
407ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
408AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
409AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
410AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
411Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
412Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
413Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
414Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
415Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
416Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
417Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
418Atomic layer epitaxy for quantum well nitride-based devices
419Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
420Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
421Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
422Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
423Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
424Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
425Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
426Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
427Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
428Crystalline growth of AlN thin films by atomic layer deposition
429Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
430Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
431Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
432Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
433Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
434Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
435Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
436Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
437Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
438Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
439GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
440GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
441Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
442Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
443Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
444Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
445Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
446Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
447High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
448High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
449High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
450Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
451Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
452Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
453Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
454Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
455Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
456Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
457Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
458Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
459Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
460New materials for memristive switching
461Nitride memristors
462Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
463Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
464PEALD AlN: controlling growth and film crystallinity
465PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
466Perspectives on future directions in III-N semiconductor research
467Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
468Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
469Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
470Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
471Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
472Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
473Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
474Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
475Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
476Properties of AlN grown by plasma enhanced atomic layer deposition
477Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
478Protective capping and surface passivation of III-V nanowires by atomic layer deposition
479Radical Enhanced Atomic Layer Deposition of Metals and Oxides
480Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
481Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
482Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
483Silicon surface passivation with atomic layer deposited aluminum nitride
484Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
485Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
486Structural and optical characterization of low-temperature ALD crystalline AlN
487Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
488Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
489Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
490Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
491The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
492The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
493Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
494Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
495TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
496XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
497Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
498Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
499Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
500Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
501Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
502Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
503Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
504Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
505Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
506Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
507Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
508Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
509Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
510Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
511Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
512Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
513Plasma enhanced atomic layer deposition of aluminum sulfide thin films
514Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
515Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
516Composite materials and nanoporous thin layers made by atomic layer deposition
517Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
518Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
519Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
520Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
521Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
522Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
523Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
524Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
525Optical and Electrical Properties of AlxTi1-xO Films
526Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
527Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
528Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
529Breakdown and Protection of ALD Moisture Barrier Thin Films
530Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
531A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
532Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
533Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
534The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
535Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
536Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
537Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
538Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
539Tribological properties of thin films made by atomic layer deposition sliding against silicon
540Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
541Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
542Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition