Search Plasma ALD Publication Database By...

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Trimethylaluminum, min. 98%
2Strem Chemicals, Inc.Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
3Strem Chemicals, Inc.Trimethylaluminum, min. 98%, contained in high-temp 50 ml cylinder for CVD/ALD
4Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al)
5Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
6Strem Chemicals, Inc.Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
7EpiValenceAluminium trimethyl
8Sigma-Aldrich, Co. LLCTrimethylaluminum 97%
9American ElementsTrimethylaluminum

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 464 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
2Radical Enhanced Atomic Layer Deposition of Metals and Oxides
3Study on the characteristics of aluminum thin films prepared by atomic layer deposition
4Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
5Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
6Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
7Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
8Encapsulation method for atom probe tomography analysis of nanoparticles
9Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
10'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
111D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
1246-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
13A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
14A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
15A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
16A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
17A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
18A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
19AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
20Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
21Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
22Advances in the fabrication of graphene transistors on flexible substrates
23Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
24Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
25Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
26Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
27ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
28AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
29AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
30AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
31AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
32AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
33Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
34Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
35Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
36An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
37Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
38Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
39Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
40Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
41Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
42Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
43Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
44Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
45Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
46Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
47AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
48Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
49Band alignment of Al2O3 with (-201) β-Ga2O3
50Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
51Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
52Breakdown and Protection of ALD Moisture Barrier Thin Films
53Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
54Capacitance spectroscopy of gate-defined electronic lattices
55Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
56Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
57Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
58Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
59Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
60Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
61Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
62Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
63Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
64Charge effects of ultrafine FET with nanodot type floating gate
65Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
66Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
67Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
68Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
69Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
70Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
71Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
72Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
73Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
74Damage evaluation in graphene underlying atomic layer deposition dielectrics
75DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
76Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
77Demonstration of flexible thin film transistors with GaN channels
78Densification of Thin Aluminum Oxide Films by Thermal Treatments
79Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
80Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
81Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
82DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
83Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
84Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
85Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
86Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
87Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
88Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
89Dynamic tuning of plasmon resonance in the visible using graphene
90Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
91Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
92Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
93Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
94Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
95Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
96Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
97Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
98Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
99Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
100Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
101Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
102Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
103Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
104Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
105Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
106Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
107Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
108Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
109Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
110Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
111Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
112Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
113Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
114Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
115Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
116Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
117Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
118Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
119Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
120Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
121Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
122Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
123Energy-enhanced atomic layer deposition for more process and precursor versatility
124Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
125Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
126Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
127Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
128Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
129Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
130Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
131Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
132Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
133Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
134Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
135Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
136Experimental verification of electro-refractive phase modulation in graphene
137Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
138Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
139Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
140Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
141Fast Flexible Plastic Substrate ZnO Circuits
142Fast PEALD ZnO Thin-Film Transistor Circuits
143Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
144Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
145Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
146Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
147Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
148Flexible, light trapping substrates for organic photovoltaics
149Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
150Gate Insulator for High Mobility Oxide TFT
151Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
152Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
153Hafnia and alumina on sulphur passivated germanium
154High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
155High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
156High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
157High-efficiency embedded transmission grating
158High-Reflective Coatings For Ground and Space Based Applications
159Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
160Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
161Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
162Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
163Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
164Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
165Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
166Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
167Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
168Improved understanding of recombination at the Si/Al2O3 interface
169Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
170Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
171Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
172Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
173Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
174In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
175In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
176In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
177Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
178Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
179Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
180Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
181Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
182Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
183Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
184Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
185Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
186Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
187Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
188Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
189Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
190Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
191Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
192Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
193Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
194Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
195Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
196Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
197Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
198Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
199Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
200Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
201Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
202Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
203Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
204Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
205Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
206Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
207Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
208Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
209Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
210Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
211Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
212Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
213Low-Power Double-Gate ZnO TFT Active Rectifier
214Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
215Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
216Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
217Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
218MANOS performance dependence on ALD Al2O3 oxidation source
219Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
220Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
221Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
222Method of Fabrication for Encapsulated Polarizing Resonant Gratings
223Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
224Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
225Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
226Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
227Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
228Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
229Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
230N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
231Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
232Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
233Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
234Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
235Nitride passivation of the interface between high-k dielectrics and SiGe
236Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
237Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
238Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
239On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
240On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
241On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
242On the equilibrium concentration of boron-oxygen defects in crystalline silicon
243On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
244Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
245Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
246Optimization of the Surface Structure on Black Silicon for Surface Passivation
247Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
248Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
249Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
250Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
251Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
252Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
253Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
254Passivation effects of atomic-layer-deposited aluminum oxide
255Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
256Patterned deposition by plasma enhanced spatial atomic layer deposition
257PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
258Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
259Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
260Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
261Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
262Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
263Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
264Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
265Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
266Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
267Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
268Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
269Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
270Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
271Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
272Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
273Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
274Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
275Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
276Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
277Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
278Propagation Effects in Carbon Nanoelectronics
279Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
280Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
281Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
282Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
283Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
284Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
285Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
286Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
287Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
288RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
289Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
290Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
291Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
292Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
293Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
294Single-Cell Photonic Nanocavity Probes
295Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
296Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
297Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
298Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
299Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
300Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
301Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
302Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
303Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
304Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
305Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
306Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
307Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
308Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
309Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
310Symmetrical Al2O3-based passivation layers for p- and n-type silicon
311Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
312Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
313Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
314The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
315The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
316The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
317Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
318Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
319Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
320TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
321Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
322Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
323Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
324Trapped charge densities in Al2O3-based silicon surface passivation layers
325Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
326Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
327Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
328Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
329Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
330Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
331Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
332Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
333Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
334Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
335Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
336Very high frequency plasma reactant for atomic layer deposition
337Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
338Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
339Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
340Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
341Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
342Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
343Atomic layer epitaxy for quantum well nitride-based devices
344Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
345Perspectives on future directions in III-N semiconductor research
346Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
347A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
348ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
349AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
350AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
351Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
352Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
353Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
354Atomic layer epitaxy for quantum well nitride-based devices
355Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
356Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
357Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
358Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
359Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
360Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
361Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
362Crystalline growth of AlN thin films by atomic layer deposition
363Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
364Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
365Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
366Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
367Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
368Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
369Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
370Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
371GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
372GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
373Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
374Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
375Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
376Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
377Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
378High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
379High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
380High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
381Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
382Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
383Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
384Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
385Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
386Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
387Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
388Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
389Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
390Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
391Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
392Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
393Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
394New materials for memristive switching
395Nitride memristors
396Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
397Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
398Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
399PEALD AlN: controlling growth and film crystallinity
400PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
401Perspectives on future directions in III-N semiconductor research
402Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
403Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
404Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
405Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
406Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
407Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
408Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
409Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
410Properties of AlN grown by plasma enhanced atomic layer deposition
411Radical Enhanced Atomic Layer Deposition of Metals and Oxides
412Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
413Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
414Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
415Silicon surface passivation with atomic layer deposited aluminum nitride
416Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
417Structural and optical characterization of low-temperature ALD crystalline AlN
418Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
419Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
420Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
421Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
422The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
423The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
424Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
425TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
426XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
427Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
428Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
429Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
430Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
431Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
432Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
433Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
434Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
435Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
436Plasma enhanced atomic layer deposition of aluminum sulfide thin films
437Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
438Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
439Composite materials and nanoporous thin layers made by atomic layer deposition
440Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
441Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
442Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
443Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
444Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
445Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
446Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
447Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
448Optical and Electrical Properties of AlxTi1-xO Films
449Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
450Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
451Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
452Breakdown and Protection of ALD Moisture Barrier Thin Films
453Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
454A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
455Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
456Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
457The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
458Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
459Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
460Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
461Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
462Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
463Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
464Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition

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I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. If you know of publications I have missed or a database entry is wrong, send me an email at: marksowa@plasma-ald.com

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