TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3, CAS# 75-24-1

Informational Websites

NumberWebsite
1https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

NumberVendorRegionLink
1Pegasus Chemicals🇬🇧Trimethylaluminium
2Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum packaged for use in deposition systems
3Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
4DOCK/CHEMICALS🇩🇪Trimethylaluminum
5Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%, contained in high-temp cylinder
6Yoodatech (Shanghai) Co., LtdTMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3 - contact maggie@yoodatech.com
7Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al) PURATREM
8Sigma-Aldrich, Co. LLC🇺🇸Trimethylaluminum 97%
9Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
10Strem Chemicals, Inc.🇺🇸Trimethylaluminum, min. 98%
11Strem Chemicals, Inc.🇺🇸Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
12American Elements🇺🇸Trimethylaluminum

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 615 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
2Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
3Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene
4Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
5Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
6Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
7AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
8Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
9Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
10Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
11A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
12Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
13AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
14Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
15Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
16Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
17Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
18Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
19Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
20Dynamic tuning of plasmon resonance in the visible using graphene
21Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma
22Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
23Optical in situ monitoring of plasma-enhanced atomic layer deposition process
24Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
25Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
26Densification of Thin Aluminum Oxide Films by Thermal Treatments
27Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
28Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
29High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
30Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
31Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
32Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
33Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
34Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
35Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
36Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
37The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
38Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
39Passivation effects of atomic-layer-deposited aluminum oxide
40Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
41Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
42Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
43Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition
44Tribological properties of thin films made by atomic layer deposition sliding against silicon
45Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
46Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
47Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
48An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
49Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
50Perspectives on future directions in III-N semiconductor research
51Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
52Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
53Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
54Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
55A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
56Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
57Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
58Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
59Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
60Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
61Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
62Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
63Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
64Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
65Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
66Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
67Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
68Crystalline growth of AlN thin films by atomic layer deposition
69Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
70Lithium-Iron (III) Fluoride Battery with Double Surface Protection
71Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
72Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films
73Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
74Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
75Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
76Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
77Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
78High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
79Low-Power Double-Gate ZnO TFT Active Rectifier
80Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
81Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
82Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
83Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
84Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
85Study on the characteristics of aluminum thin films prepared by atomic layer deposition
86In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
87On the equilibrium concentration of boron-oxygen defects in crystalline silicon
88Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
89Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
90Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
91Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
92Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
93A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
94Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
95Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
96Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
97Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
98Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
99Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
100Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
101Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
102New materials for memristive switching
103Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
104Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
105Breakdown and Protection of ALD Moisture Barrier Thin Films
106Very high frequency plasma reactant for atomic layer deposition
107GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
108Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
109High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
110Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
111Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
112Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
113Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
114Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
115Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
116Impact of interface materials on side permeation in indirect encapsulation of organic electronics
117Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
118Nitride memristors
119Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
120Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
121Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
122Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
123Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
124Propagation Effects in Carbon Nanoelectronics
125Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
126Symmetrical Al2O3-based passivation layers for p- and n-type silicon
127Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation
128MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion
129Single-Cell Photonic Nanocavity Probes
130Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
131Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
132Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
133823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
134Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
135Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
136Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
137Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
138Anti-stiction coating for mechanically tunable photonic crystal devices
139On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
140Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
141Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source
142Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
143Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
144Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
145Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
146Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
147Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
148Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
149Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
150Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition
151Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
152Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
153Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
154Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
155Radical Enhanced Atomic Layer Deposition of Metals and Oxides
156PEALD AlN: controlling growth and film crystallinity
157Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
158Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
159Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
160A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
161Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
162Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
163Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
164Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
165Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
166Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
167Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
168Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
169Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
170DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
171Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
172Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
173The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
174Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
175Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
176Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
177Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
178Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
179Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
180Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
181Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
182Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
183Improved understanding of recombination at the Si/Al2O3 interface
184Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
185Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
186Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
187Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers
188Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
189Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
190Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
191Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
192Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
193Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
194Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
195TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
196MANOS performance dependence on ALD Al2O3 oxidation source
197Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
198Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
199Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
200Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
201Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
202Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
203Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
204In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
205Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
206Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
207Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
208A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
209AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
210Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
211Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface
212Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
213Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
214Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
2151D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
216Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
217Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
218Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
219Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
220Fiber-matrix interface reinforcement using Atomic Layer Deposition
221Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
222On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
223Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
224Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
225AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
226Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
227Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
228Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
229Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
230Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
231Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2
232The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
233Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
234Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
235Residual stress study of thin films deposited by atomic layer deposition
236Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
237Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
238Nanoscale Encapsulation of Hybrid Perovskites Using Hybrid Atomic Layer Deposition
239On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
240Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
241Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
242Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
243Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
244Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
245Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
246Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
247Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
248Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors
249Charge effects of ultrafine FET with nanodot type floating gate
250Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
251A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
252Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
253Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
254Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
255Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
256Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
257High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
258Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
259Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
260Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
261Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
262Energy-enhanced atomic layer deposition for more process and precursor versatility
263Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3
264Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
265Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions
266Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
267Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
268Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
269Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
270A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
271XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
272Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
273Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
274Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
275Atomic layer deposition of metal-oxide thin films on cellulose fibers
276Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
277Temperature study of atmospheric-pressure plasma-enhanced spatial ALD of Al2O3 using infrared and optical emission spectroscopy
278Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
279Trapped charge densities in Al2O3-based silicon surface passivation layers
280Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
281DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
282Mechanical properties of thin-film Parylene-metal-Parylene devices
283Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
284On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
285Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
286Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
287A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
288Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
289Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
290Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
291Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
292The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
293Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
294Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
295Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
296Damage evaluation in graphene underlying atomic layer deposition dielectrics
297Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
298Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
299Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
300Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
301Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
302Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
303Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
304AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
305Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
306Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
307Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
308Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
30946-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
310High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
311Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
312Method of Fabrication for Encapsulated Polarizing Resonant Gratings
313Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
314Optimization of the Surface Structure on Black Silicon for Surface Passivation
315Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
316Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
317Band alignment of Al2O3 with (-201) β-Ga2O3
318Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
319Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
320'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
321Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
322Sub-nanometer heating depth of atomic layer annealing
323Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
324Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
325Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
326Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
327Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition
328Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
329Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
330Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
331Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
332Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
333Tuning size and coverage of Pd nanoparticles using atomic layer deposition
334Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
335Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
336Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
337High-efficiency embedded transmission grating
338Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
339Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
340High-Reflective Coatings For Ground and Space Based Applications
341Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
342Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
343Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
344Properties of AlN grown by plasma enhanced atomic layer deposition
345High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
346Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
347Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer
348Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
349Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition
350AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
351Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
352A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
353Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
354Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
355Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
356Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
357AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
358Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
359Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
360Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
361Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
362Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
363PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
364Encapsulation method for atom probe tomography analysis of nanoparticles
365Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
366Silicon surface passivation with atomic layer deposited aluminum nitride
367Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
368Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
369A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
370A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer
371Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
372RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
373Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
374Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
375Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
376Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
377Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
378Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
379The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
380Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
381Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
382Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
383Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
384PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
385Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
386Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
387Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
388Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
389Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
390Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
391Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
392Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
393Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
394Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
395Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
396Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
397Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
398Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
399Breakdown and Protection of ALD Moisture Barrier Thin Films
400Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
401Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
402Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
403AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
404Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
405Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
406Interfaces Formed by ALD Metal Oxide Growth on Metal Layers
407Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
408Structural and optical characterization of low-temperature ALD crystalline AlN
409Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
410Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
411Plasma enhanced atomic layer deposition of aluminum sulfide thin films
412Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
413Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
414Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
415Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
416Advances in the fabrication of graphene transistors on flexible substrates
417Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
418Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
419Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
420Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
421Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
422Tube-type plasma-enhanced atomic layer deposition of aluminum oxide: Enabling record lab performance for the industry with demonstrated cell efficiencies >24%
423Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
424Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
425Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
426Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
427Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
428Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources
429Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
430Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
431Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
432Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
433Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
434Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
435Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
436Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
437High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
438Patterned deposition by plasma enhanced spatial atomic layer deposition
439Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
440Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
441Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
442Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
443In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
444Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
445Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
446Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
447Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
448Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
449Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
450Hafnia and alumina on sulphur passivated germanium
451Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
452Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition
453Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
454Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
455Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating
456Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors
457Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
458Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
459Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
460Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
461Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
462Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
463Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
464Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
465Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
466Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
467Tribological properties of thin films made by atomic layer deposition sliding against silicon
468Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
469Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
470GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
471Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
472Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
473In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition
474Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
475Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
476Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
477Nitride passivation of the interface between high-k dielectrics and SiGe
478Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
479Composite materials and nanoporous thin layers made by atomic layer deposition
480The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
481Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
482Experimental verification of electro-refractive phase modulation in graphene
483Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
484Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
485Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
486Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
487Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
488Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
489Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
490Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
491Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
492Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
493Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
494Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
495Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
496Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
497Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
498Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
499Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
500Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
501Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
502ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
503Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
504Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
505Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
506Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
507AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
508Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
509Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
510Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
511Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
512Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
513Optical and Electrical Properties of AlxTi1-xO Films
514N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
515Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
516Perspectives on future directions in III-N semiconductor research
517Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
518Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
519Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
520Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
521Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
522Plasma and Thermal ALD of Al2O3 in a Commercial 200mm ALD Reactor
523Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
524Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
525Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
526Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
527Fast PEALD ZnO Thin-Film Transistor Circuits
528Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
529Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
530Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
531Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
532AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
533Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating
534Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
535Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
536In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
537ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
538Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
539Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
540Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
541Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
542Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
543Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
544Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
545Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
546Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone
547Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition
548Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
549Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
550Capacitance spectroscopy of gate-defined electronic lattices
551Nonvolatile Capacitive Crossbar Array for In-Memory Computing
552Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
553Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
554Radical Enhanced Atomic Layer Deposition of Metals and Oxides
555First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
556Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
557Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
558Gate Insulator for High Mobility Oxide TFT
559Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
560Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
561Flexible, light trapping substrates for organic photovoltaics
562Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
563Protective capping and surface passivation of III-V nanowires by atomic layer deposition
564Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
565TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
566Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
567The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
568Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
569Low-energy high-flux ion bombardment-induced interfacial mixing during Al2O3 plasma-enhanced atomic layer deposition
570Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
571Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
572Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
573Protective capping and surface passivation of III-V nanowires by atomic layer deposition
574On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
575Atomic layer epitaxy for quantum well nitride-based devices
576Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
577Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
578Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
579Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
580AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
581Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
582Innovative remote plasma source for atomic layer deposition for GaN devices
583Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure
584Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
585Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
586Atomic layer epitaxy for quantum well nitride-based devices
587Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
588Fast Flexible Plastic Substrate ZnO Circuits
589Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
590Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
591Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
592Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
593Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
594Optical display film as flexible and light trapping substrate for organic photovoltaics
595Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
596Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth