1 | Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates |
2 | Nitride passivation of the interface between high-k dielectrics and SiGe |
3 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
4 | Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma |
5 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
6 | High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy |
7 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
8 | Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices |
9 | MANOS performance dependence on ALD Al2O3 oxidation source |
10 | Selective composition modification deposition utilizing ion bombardment-induced interfacial mixing during plasma-enhanced atomic layer deposition |
11 | Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition |
12 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
13 | Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses |
14 | On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR |
15 | Single-Cell Photonic Nanocavity Probes |
16 | Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems |
17 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
18 | Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating |
19 | Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition |
20 | Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices |
21 | Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen |
22 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
23 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
24 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
25 | Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition |
26 | Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process |
27 | The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces |
28 | Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals |
29 | Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon |
30 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
31 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
32 | Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters |
33 | Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer |
34 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
35 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
36 | AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD |
37 | Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime |
38 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
39 | Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate |
40 | Effect of Plasma-Enhanced Atomic Layer Deposition on Oxygen Overabundance and Its Influence on the Morphological, Optical, Structural, and Mechanical Properties of Al-Doped TiO2 Coating |
41 | Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier |
42 | Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells |
43 | AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD |
44 | Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces |
45 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
46 | Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3 |
47 | Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene |
48 | Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
49 | In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors |
50 | PEALD AlN: controlling growth and film crystallinity |
51 | Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing |
52 | Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes |
53 | Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments |
54 | Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks |
55 | A Microwave Driven PE-ALD for Ultrathin Al2O3/ZnO Synthesis over Perovskite Layer |
56 | Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors |
57 | Light response behaviors of amorphous In-Ga-Zn-O thin-film transistors via in situ interfacial hydrogen doping modulation |
58 | AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants |
59 | Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement |
60 | Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2 |
61 | Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning |
62 | Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition |
63 | Experimental verification of electro-refractive phase modulation in graphene |
64 | Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors |
65 | High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
66 | Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks |
67 | Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources |
68 | Atomic Layer Deposition of Aluminum Phosphate Using AlMe3, PO(OMe)3, and O2 Plasma: Film Growth and Surface Reactions |
69 | Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition |
70 | Flexible, light trapping substrates for organic photovoltaics |
71 | Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition |
72 | DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air |
73 | Energy-enhanced atomic layer deposition for more process and precursor versatility |
74 | Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition |
75 | Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 |
76 | Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell |
77 | Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition |
78 | MOS Capacitance Measurements for PEALD TiO2 Dielectric Films Grown under Different Conditions and the Impact of Al2O3 Partial-Monolayer Insertion |
79 | Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties |
80 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
81 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
82 | High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits |
83 | High-efficiency embedded transmission grating |
84 | Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting |
85 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
86 | Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides |
87 | Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface |
88 | Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure |
89 | Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition |
90 | Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content |
91 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
92 | Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer |
93 | Mechanical properties of thin-film Parylene-metal-Parylene devices |
94 | Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN |
95 | Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells |
96 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
97 | Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films |
98 | Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center |
99 | Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers |
100 | Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density |
101 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
102 | Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition |
103 | Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition |
104 | Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment |
105 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
106 | Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride |
107 | GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation |
108 | Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications |
109 | Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 |
110 | Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer |
111 | Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition |
112 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
113 | Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy |
114 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy |
115 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
116 | Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions |
117 | Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors |
118 | Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering |
119 | Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN |
120 | Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact |
121 | Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration |
122 | Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs |
123 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
124 | Residual stress study of thin films deposited by atomic layer deposition |
125 | Localized defect states and charge trapping in atomic layer deposited-Al2O3 films |
126 | Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors |
127 | Investigation of field-effect passivation and interface state parameters at the Al2O3/Si interface |
128 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
129 | Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells |
130 | In situ real-time and ex situ spectroscopic analysis of Al2O3 films prepared by plasma enhanced atomic layer deposition |
131 | Properties of HfAlO film deposited by plasma enhanced atomic layer deposition |
132 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
133 | The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides |
134 | Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating |
135 | Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure |
136 | Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment |
137 | Fiber-matrix interface reinforcement using Atomic Layer Deposition |
138 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
139 | Anti-stiction coating for mechanically tunable photonic crystal devices |
140 | 1D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices |
141 | Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique |
142 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
143 | New materials for memristive switching |
144 | Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
145 | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
146 | Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition |
147 | On the equilibrium concentration of boron-oxygen defects in crystalline silicon |
148 | Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition |
149 | Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon |
150 | Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal |
151 | A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs |
152 | Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells |
153 | On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies |
154 | Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties |
155 | Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films |
156 | Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation |
157 | Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets |
158 | Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers |
159 | Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition |
160 | Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3 |
161 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
162 | Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers |
163 | Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma |
164 | Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems |
165 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
166 | Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition |
167 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
168 | Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films |
169 | Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD |
170 | Damage evaluation in graphene underlying atomic layer deposition dielectrics |
171 | Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process |
172 | 46-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor |
173 | Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures |
174 | Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment |
175 | Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal |
176 | Atomic layer epitaxy for quantum well nitride-based devices |
177 | Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT |
178 | A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD |
179 | Patterned deposition by plasma enhanced spatial atomic layer deposition |
180 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
181 | Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers |
182 | Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics |
183 | Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing |
184 | Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition |
185 | Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer |
186 | Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 |
187 | Atomic Layer Deposition Al2O3 Thin Films in Magnetized Radio Frequency Plasma Source |
188 | Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition |
189 | Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications |
190 | Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers |
191 | Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
192 | Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors |
193 | Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films |
194 | On the role of nanoporosity in controlling the performance of moisture permeation barrier layers |
195 | Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices |
196 | Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
197 | Graphene based on-chip variable optical attenuator operating at 855 nm wavelength |
198 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
199 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
200 | Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability |
201 | High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3 |
202 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
203 | Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization |
204 | Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers |
205 | Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells |
206 | Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges |
207 | Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy |
208 | A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor |
209 | Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment |
210 | Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell |
211 | Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition |
212 | Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures |
213 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
214 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
215 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
216 | Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3 |
217 | Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length |
218 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
219 | Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption |
220 | Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma |
221 | Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors |
222 | Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation |
223 | Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium |
224 | Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure |
225 | Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 |
226 | Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer |
227 | Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources |
228 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
229 | Atomic layer deposition of metal-oxide thin films on cellulose fibers |
230 | Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si |
231 | Charge effects of ultrafine FET with nanodot type floating gate |
232 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
233 | On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation |
234 | Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition |
235 | Impact of interface materials on side permeation in indirect encapsulation of organic electronics |
236 | A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz |
237 | Optimization of the Surface Structure on Black Silicon for Surface Passivation |
238 | Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth |
239 | Densification of Thin Aluminum Oxide Films by Thermal Treatments |
240 | Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing |
241 | Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing |
242 | PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads |
243 | Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications |
244 | Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide |
245 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
246 | 823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric |
247 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
248 | Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition |
249 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
250 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
251 | Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method |
252 | Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces |
253 | Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure |
254 | Perspectives on future directions in III-N semiconductor research |
255 | Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs |
256 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
257 | Capacitance spectroscopy of gate-defined electronic lattices |
258 | Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition |
259 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
260 | In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3 |
261 | Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection |
262 | Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates |
263 | Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures |
264 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
265 | Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films |
266 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
267 | Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film |
268 | Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition |
269 | Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors |
270 | Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe |
271 | Band alignment of Al2O3 with (-201) β-Ga2O3 |
272 | Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition |
273 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
274 | Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor |
275 | Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process |
276 | Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics |
277 | Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration |
278 | Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma |
279 | Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric |
280 | Hafnia and alumina on sulphur passivated germanium |
281 | Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition |
282 | Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge |
283 | Ultrathin Surface Coating Enables the Stable Sodium Metal Anode |
284 | Influence of Surface Temperature on the Mechanism of Atomic Layer Deposition of Aluminum Oxide Using an Oxygen Plasma and Ozone |
285 | First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina |
286 | Fast Flexible Plastic Substrate ZnO Circuits |
287 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
288 | Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition |
289 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
290 | Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition |
291 | Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing |
292 | Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films |
293 | Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs |
294 | Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing |
295 | Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors |
296 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
297 | Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3 |
298 | Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries |
299 | Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range |
300 | Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films |
301 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
302 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
303 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
304 | Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils |
305 | Structural and optical characterization of low-temperature ALD crystalline AlN |
306 | Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition |
307 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
308 | Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C |
309 | Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene |
310 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
311 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
312 | Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon |
313 | High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition |
314 | Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition |
315 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
316 | Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells |
317 | Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs |
318 | Advances in the fabrication of graphene transistors on flexible substrates |
319 | Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN |
320 | Low-Power Double-Gate ZnO TFT Active Rectifier |
321 | Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors |
322 | Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics |
323 | Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy |
324 | Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency |
325 | A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition |
326 | Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes |
327 | Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor |
328 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
329 | Optical in situ monitoring of plasma-enhanced atomic layer deposition process |
330 | Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer |
331 | Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer |
332 | Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films |
333 | Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films |
334 | Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition |
335 | Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition |
336 | RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor |
337 | Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors |
338 | Plasma-Enhanced Atomic Layer Deposition of Al2O3 on Graphene Using Monolayer hBN as Interfacial Layer |
339 | Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor |
340 | Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric |
341 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
342 | Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition |
343 | 'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition |
344 | Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition |
345 | Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact |
346 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
347 | Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods |
348 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
349 | Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors |
350 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
351 | Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene |
352 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
353 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
354 | Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor |
355 | Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess |
356 | Gate Insulator for High Mobility Oxide TFT |
357 | Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides |
358 | Properties of AlN grown by plasma enhanced atomic layer deposition |
359 | Atomic-scale characterization of plasma-induced damage in plasma-enhanced atomic layer deposition |
360 | Plasma enhanced atomic layer deposition of aluminum sulfide thin films |
361 | Study on the characteristics of aluminum thin films prepared by atomic layer deposition |
362 | Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer |
363 | Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices |
364 | Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million |
365 | Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy |
366 | Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors |
367 | Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 |
368 | Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications |
369 | Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method |
370 | Method of Fabrication for Encapsulated Polarizing Resonant Gratings |
371 | Atomic layer epitaxy for quantum well nitride-based devices |
372 | N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes |
373 | Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics |
374 | The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology |
375 | Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment |
376 | Toward reliable MIS- and MOS-gate structures for GaN lateral power devices |
377 | Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells |
378 | Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition |
379 | Using top graphene layer as sacrificial protection during dielectric atomic layer deposition |
380 | Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC |
381 | Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment |
382 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
383 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
384 | Propagation Effects in Carbon Nanoelectronics |
385 | Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3 |
386 | Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature |
387 | Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC) |
388 | Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition |
389 | Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films |
390 | Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell |
391 | Plasma-enhanced atomic layer deposition: Correlating O2 plasma parameters and species to blister formation and conformal film growth |
392 | Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films |
393 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
394 | Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma |
395 | Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor |
396 | Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment |
397 | Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3 |
398 | Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement |
399 | Advanced thin gas barriers film incorporating alternating structure of PEALD-based Al2O3/organic-inorganic nanohybrid layers |
400 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
401 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
402 | Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes |
403 | Optical and Electrical Properties of AlxTi1-xO Films |
404 | Growth of aluminum nitride films by plasma-enhanced atomic layer deposition |
405 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
406 | Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique |
407 | Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si |
408 | Encapsulation method for atom probe tomography analysis of nanoparticles |
409 | Interfaces Formed by ALD Metal Oxide Growth on Metal Layers |
410 | Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas |
411 | An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD |
412 | Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures |
413 | Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films |
414 | Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates |
415 | Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells |
416 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
417 | Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3 |
418 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
419 | Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications |
420 | AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs |
421 | Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs |
422 | Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films |
423 | ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs |
424 | Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer |
425 | XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition |
426 | Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition |
427 | Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition |
428 | Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber |
429 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
430 | Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces |
431 | Dynamic tuning of plasmon resonance in the visible using graphene |
432 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
433 | Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET |
434 | Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature |
435 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |
436 | Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C |
437 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
438 | Surface passivation of GaAs nanowires by the atomic layer deposition of AlN |
439 | Fast PEALD ZnO Thin-Film Transistor Circuits |
440 | High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films |
441 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
442 | Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization |
443 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
444 | Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures |
445 | Very high frequency plasma reactant for atomic layer deposition |
446 | Nitride memristors |
447 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
448 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
449 | Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells |
450 | Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films |
451 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
452 | Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode |
453 | Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks |
454 | Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition |
455 | Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene |
456 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
457 | Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition |
458 | Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer |
459 | Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides |
460 | Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition |
461 | Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon |
462 | Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell |
463 | Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate |
464 | The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition |
465 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
466 | Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy |
467 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
468 | Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions |
469 | Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping |
470 | Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application |
471 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
472 | DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors |
473 | Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications |
474 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
475 | Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition |
476 | GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride |
477 | Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition |
478 | Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers |
479 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
480 | Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition |
481 | ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent |
482 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
483 | Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V |
484 | Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity |
485 | Electrically Excited Plasmonic Nanoruler for Biomolecule Detection |
486 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
487 | High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning |
488 | The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition |
489 | Tuning size and coverage of Pd nanoparticles using atomic layer deposition |
490 | Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells |
491 | Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation |
492 | Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques |
493 | Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect? |
494 | AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing |
495 | Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition |
496 | Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries |
497 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
498 | Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics |
499 | Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation |
500 | Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells |
501 | AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms |
502 | Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators |
503 | Silicon surface passivation with atomic layer deposited aluminum nitride |
504 | Composite materials and nanoporous thin layers made by atomic layer deposition |
505 | Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing |
506 | Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates |
507 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
508 | Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN |
509 | Oxide semiconductor thin film transistors on thin solution-cast flexible substrates |
510 | Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide |
511 | Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage |
512 | Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition |
513 | Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices |
514 | Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition |
515 | The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain |
516 | Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures |
517 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
518 | Optical display film as flexible and light trapping substrate for organic photovoltaics |
519 | Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells |
520 | Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments |
521 | High-Reflective Coatings For Ground and Space Based Applications |
522 | Passivation effects of atomic-layer-deposited aluminum oxide |
523 | Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures |
524 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
525 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
526 | Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition |
527 | Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia |
528 | Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate |
529 | Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma |
530 | Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition |
531 | Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches |
532 | Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide |
533 | Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films |
534 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
535 | Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic |
536 | Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries |
537 | Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films |
538 | Perspectives on future directions in III-N semiconductor research |
539 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
540 | Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy |
541 | Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories |
542 | Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack |
543 | Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment |
544 | Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes |
545 | Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films |
546 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
547 | Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films |
548 | Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application |
549 | Crystalline growth of AlN thin films by atomic layer deposition |
550 | Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices |
551 | Innovative remote plasma source for atomic layer deposition for GaN devices |
552 | TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition |
553 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
554 | Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs |
555 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
556 | Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection |
557 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
558 | Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces |
559 | PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity |
560 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
561 | Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system |
562 | Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops |
563 | Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition |
564 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
565 | Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems |
566 | Electrical characterization of the slow boron oxygen defect component in Czochralski silicon |
567 | Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants |
568 | Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells |
569 | Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process |
570 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
571 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
572 | Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources |
573 | Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor |
574 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
575 | Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition |
576 | Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition |
577 | Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition |
578 | Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition |
579 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
580 | Improved understanding of recombination at the Si/Al2O3 interface |
581 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
582 | Sub-nanometer heating depth of atomic layer annealing |
583 | Lithium-Iron (III) Fluoride Battery with Double Surface Protection |
584 | Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition |
585 | Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures |