TMA, AlMe₃, Trimethyl Aluminum, CAS# 75-24-1

Informational Websites

Number	Website
1	https://en.wikipedia.org/wiki/Trimethylaluminium

Where to buy

Number	Vendor	Link
1	Strem Chemicals, Inc.	Trimethylaluminum, min. 98%, contained in 50 ml cylinder for CVD/ALD
2	Strem Chemicals, Inc.	Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml cylinder for CVD/ALD
3	Strem Chemicals, Inc.	Trimethylaluminum, min. 98%, contained in high-temp 50 ml cylinder for CVD/ALD
4	Strem Chemicals, Inc.	Trimethylaluminum, elec. gr. (99.999+%-Al), contained in 50 ml electropolished cylinder for CVD/ALD
5	Strem Chemicals, Inc.	Trimethylaluminum, min. 98% (Material sold in non-returnable cylinder)
6	Strem Chemicals, Inc.	Trimethylaluminum, elec. gr. (99.999+%-Al)

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 507 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
2	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
3	Study on the characteristics of aluminum thin films prepared by atomic layer deposition
4	Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
5	Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
6	Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization
7	Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
8	Encapsulation method for atom probe tomography analysis of nanoparticles
9	Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
10	'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition
11	1D versus 3D quantum confinement in 1-5 nm ZnO nanoparticle agglomerations for application in charge-trapping memory devices
12	46-2: Multi-Level-Pressure Touch Sensors with P(VDF-TrFE) Deposited on Metal Oxide Thin Film Transistor
13	A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
14	A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD
15	A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
16	A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
17	A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
18	A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
19	AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
20	Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cells
21	Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
22	Advances in the fabrication of graphene transistors on flexible substrates
23	Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition
24	Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
25	Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
26	Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation
27	Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
28	ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
29	AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
30	AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
31	AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
32	AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
33	AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
34	Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
35	Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
36	Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
37	An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
38	Analog/RF Study of Self-aligned In0.53Ga0.47As MOSFET with Scaled Gate Length
39	Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy
40	Anti-stiction coating for mechanically tunable photonic crystal devices
41	Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
42	Application of spectral ellipsometry to in situ diagnostics of atomic layer deposition of dielectrics on silicon and AlGaN
43	Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
44	Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
45	Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
46	Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
47	Atomic layer deposition of metal-oxide thin films on cellulose fibers
48	Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
49	Atomic layer deposition precursor step repetition and surface plasma pretreatment influence on semiconductor-insulator-semiconductor heterojunction solar cell
50	AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
51	Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions
52	Band alignment of Al2O3 with (-201) β-Ga2O3
53	Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer
54	Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
55	Breakdown and Protection of ALD Moisture Barrier Thin Films
56	Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
57	Capacitance spectroscopy of gate-defined electronic lattices
58	Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
59	Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
60	Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
61	Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
62	Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
63	Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
64	Characteristics of Charge Trap Flash Memory with Al2O3/(Ta/Nb)Ox/Al2O3 Multi-Layer
65	Characterization of CVD graphene permittivity and conductivity in micro-/millimeter wave frequency range
66	Characterizations of Al2O3 gate dielectric deposited on n-GaN by plasma-assisted atomic layer deposition
67	Charge effects of ultrafine FET with nanodot type floating gate
68	Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
69	Chemical Protection of Polycarbonate Surfaces by Atomic Layer Deposition of Alumina with Oxygen Plasma Pretreatment
70	Comparative study of thermal and plasma enhanced atomic layer deposition of aluminum oxide on graphene
71	Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
72	Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
73	Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
74	Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
75	Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
76	Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing
77	Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
78	Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
79	Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
80	Damage evaluation in graphene underlying atomic layer deposition dielectrics
81	DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
82	Defect-sealing of Al2O3/ZrO2 multilayer for barrier coating by plasma-enhanced atomic layer deposition process
83	Demonstration of flexible thin film transistors with GaN channels
84	Densification of Thin Aluminum Oxide Films by Thermal Treatments
85	Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
86	Detection of Streptavidin-Biotin Complexes Using a Highly Sensitive AlGaN/GaN-Based Extended-Gate MISHEMT-Type Biosensor
87	Development and Evaluation of a Nanometer-Scale Hemocompatible and Antithrombotic Coating Technology Platform for Commercial Intracranial Stents and Flow Diverters
88	DFT modeling of plasma-assisted atomic layer deposition for Si(110) passivation: formation of boehmite-like chains as γ-Al2O3 precursors
89	Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
90	Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
91	Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
92	Direct measurement of coherent phonon dynamics in solution-processed stibnite thin films
93	Distribution and coverage of 40 nm gold nano-particles on aluminum and hafnium oxide using electrophoretic method and fabricated MOS structures
94	Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
95	Dynamic tuning of plasmon resonance in the visible using graphene
96	Effect of Al2O3 Buffer Layers on the Properties of Sputtered VO2 Thin Films
97	Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
98	Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
99	Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
100	Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
101	Effect of Hydrogen in Gate Insulator on NBIS Performance of Oxide Thin Film Transistor
102	Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
103	Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer
104	Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
105	Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
106	Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
107	Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
108	Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
109	Effects of Surface Passivation and Deposition Methods on the 1/f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
110	Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
111	Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
112	Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
113	Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
114	Electrical characterization and reliability analysis of Al2O3/AlGaN/GaN MISH structure
115	Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
116	Electrical characterization of the slow boron oxygen defect component in Czochralski silicon
117	Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates
118	Electrical Measurement Under Atmospheric Conditons of PbSe Nanocrystal Thin Films Passivated by Remote Plasma Atomic Layer Deposition of Al2O3
119	Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods
120	Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
121	Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
122	Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon
123	Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
124	Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
125	Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
126	Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
127	Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces
128	Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells
129	Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
130	Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
131	Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
132	Energy-enhanced atomic layer deposition for more process and precursor versatility
133	Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
134	Enhanced electrochemical performance of surface-treated Li[Ni0.8Co0.1Mn0.1]O2 cathode material for lithium-ion batteries
135	Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells
136	Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
137	Enhancement of mobility in ultra-thin-body GeOI p-channel metal-oxide-semiconductor field effect transistors with Si-passivated back interfaces
138	Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors
139	Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
140	Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
141	Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
142	Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
143	Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
144	Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
145	Experimental verification of electro-refractive phase modulation in graphene
146	Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
147	Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
148	Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
149	Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
150	Fast Flexible Plastic Substrate ZnO Circuits
151	Fast PEALD ZnO Thin-Film Transistor Circuits
152	Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
153	Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
154	Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
155	Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V
156	Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
157	First principles mechanistic study of self-limiting oxidative adsorption of remote oxygen plasma during the atomic layer deposition of alumina
158	Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
159	Flexible, light trapping substrates for organic photovoltaics
160	Formation of Al2O3 Film on Si Substrate by Microwave Generated Remote Plasma Assisted Atomic Layer Deposition Technique
161	Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
162	Gate Insulator for High Mobility Oxide TFT
163	Graphene based on-chip variable optical attenuator operating at 855 nm wavelength
164	Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides
165	Hafnia and alumina on sulphur passivated germanium
166	High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
167	High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
168	High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films
169	High-efficiency embedded transmission grating
170	High-Reflective Coatings For Ground and Space Based Applications
171	High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
172	Highly stable all-inorganic CsPbBr3 nanocrystals film encapsulated with alumina by plasma-enhanced atomic layer deposition
173	Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
174	Hot Carrier Filtering in Solution Processed Heterostructures: A Paradigm for Improving Thermoelectric Efficiency
175	Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
176	Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
177	Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
178	Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
179	Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
180	Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
181	Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
182	Improved understanding of recombination at the Si/Al2O3 interface
183	Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
184	Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
185	Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
186	Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
187	Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
188	Impurity Gettering by Atomic-Layer-Deposited Aluminium Oxide Films on Silicon at Contact Firing Temperatures
189	In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
190	In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
191	In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
192	In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
193	Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells
194	Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
195	Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
196	Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
197	Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
198	Influence of infrared radiation on the electrical characteristics of the surface-barrier nanostructures based on MBE HgCdTe
199	Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
200	Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
201	Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
202	Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
203	Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
204	Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
205	Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
206	Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?
207	Insulator-protected mechanically controlled break junctions for measuring single-molecule conductance in aqueous environments
208	Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
209	Integration of plasmonic Ag nanoparticles as a back reflector in ultra-thin Cu(In,Ga)Se2 solar cells
210	Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
211	Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
212	Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
213	Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
214	Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
215	Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
216	Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
217	Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides
218	Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
219	Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
220	Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
221	Leakage Current Reduction in ALD-Al2O3 Dielectric Deposited on Si by High Pressure Deuterium Oxide Annealing
222	Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
223	Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon
224	Liquid-Phase Crystallized Silicon Solar Cells on Glass: Increasing the Open-Circuit Voltage by Optimized Interlayers for n- and p-Type Absorbers
225	Liquids on-chip: direct storage and release employing micro-perforated vapor barrier films
226	Localized defect states and charge trapping in atomic layer deposited-Al2O3 films
227	Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
228	Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
229	Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
230	Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
231	Low-Power Double-Gate ZnO TFT Active Rectifier
232	Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
233	Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
234	Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
235	Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
236	MANOS performance dependence on ALD Al2O3 oxidation source
237	Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
238	Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
239	Metal-oxide-based hole-selective tunneling contacts for crystalline silicon solar cells
240	Method of Fabrication for Encapsulated Polarizing Resonant Gratings
241	Micro-Raman Spectroscopy for Monitoring of Deposition Quality of High-k Stack Protective Layer onto Nanowire FET Chips for Highly Sensitive miRNA Detection
242	Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
243	Minority carrier lifetime limitations in Si wafer solar cells with gallium phosphide window layers
244	Modeling of positional plasma characteristics by inserting body tube of optical emission spectroscopy for plasma assisted atomic layer deposition system
245	Moisture barrier and chemical corrosion protection of silver-based telescope mirrors using aluminum oxide films by plasma-enhanced atomic layer deposition
246	Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
247	Moisture barrier properties of thin organic-inorganic multilayers prepared by plasma-enhanced ALD and CVD in one reactor
248	Multi-functional touch sensors with strained P(VDF-TrFE) deposited on metal oxide thin film transistor
249	N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
250	Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
251	Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories
252	Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
253	Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
254	Nitride passivation of the interface between high-k dielectrics and SiGe
255	Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications
256	Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
257	Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
258	Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
259	On the composition of luminescence spectra from heavily doped p-type silicon under low and high excitation
260	On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes
261	On the determination of χ(2) in thin films: a comparison of one-beam second-harmonic generation measurement methodologies
262	On the equilibrium concentration of boron-oxygen defects in crystalline silicon
263	On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
264	Optical display film as flexible and light trapping substrate for organic photovoltaics
265	Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
266	Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition
267	Optimization of the Surface Structure on Black Silicon for Surface Passivation
268	Organic narrowband near-infrared photodetectors based on intermolecular charge-transfer absorption
269	Organic thin-film transistors with sub-10-micrometer channel length with printed polymer/carbon nanotube electrodes
270	Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
271	Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
272	Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
273	Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
274	Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
275	Passivation effects of atomic-layer-deposited aluminum oxide
276	Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
277	Patterned deposition by plasma enhanced spatial atomic layer deposition
278	PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads
279	Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
280	Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition
281	Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
282	Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
283	Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
284	Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
285	Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
286	Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
287	Plasma Processing for Crystallization and Densification of Atomic Layer Deposition BaTiO3 Thin Films
288	Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
289	Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
290	Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
291	Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
292	Plasma-assisted atomic layer deposition of nanolaminates for gate dielectric applications
293	Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
294	Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
295	Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
296	Possible Candidates for Impurities in mc-Si Wafers Responsible for Light-Induced Lifetime Degradation and Regeneration
297	Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
298	Prevention of spontaneous combustion of cellulose with a thin protective Al2O3 coating formed by atomic layer deposition
299	Propagation Effects in Carbon Nanoelectronics
300	Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
301	Realistic efficiency potential of next-generation industrial Czochralski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center
302	Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
303	Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
304	Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
305	Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
306	Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
307	Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
308	Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
309	RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
310	Self-assembled monolayers as a defect sealant of Al2O3 barrier layers grown by atomic layer deposition
311	Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
312	Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
313	Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
314	Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
315	Simple silicon solar cells featuring an a-Si:H enhanced rear MIS contact
316	Single-Cell Photonic Nanocavity Probes
317	Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
318	Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
319	Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
320	Stability of effective lifetime of float-zone silicon wafers with AlOx surface passivation schemes under illumination at elevated temperature
321	Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
322	Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
323	Stretchable Carbon Nanotube Charge-Trap Floating-Gate Memory and Logic Devices for Wearable Electronics
324	Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
325	Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
326	Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
327	Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
328	Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
329	Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
330	Surface Reaction Mechanisms during Ozone and Oxygen Plasma Assisted Atomic Layer Deposition of Aluminum Oxide
331	Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
332	Surface-enhanced gallium arsenide photonic resonator with a quality factor of six million
333	Symmetrical Al2O3-based passivation layers for p- and n-type silicon
334	Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
335	Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
336	Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
337	The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
338	The Influence of Ions and Photons during Plasma-Assisted ALD of Metal Oxides
339	The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
340	Thermal and Plasma Enhanced Atomic Layer Deposition of Al2O3 on GaAs Substrates
341	Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
342	Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
343	Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
344	TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
345	Toward an integrated device for spatiotemporal superposition of free-electron lasers and laser pulses
346	Toward reliable MIS- and MOS-gate structures for GaN lateral power devices
347	Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
348	Trapped charge densities in Al2O3-based silicon surface passivation layers
349	Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
350	Tribological properties of thin films made by atomic layer deposition sliding against silicon
351	Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
352	Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
353	Tuning the Ge(Sn) Tunneling FET: Influence of Drain Doping, Short Channel, and Sn Content
354	Tuning the nanoscale morphology and optical properties of porous gold nanoparticles by surface passivation and annealing
355	Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
356	Ultra-thin Al2O3 coating on the acid-treated 0.3Li2MnO3·0.7LiMn0.60Ni0.25Co0.15O2 electrode for Li-ion batteries
357	Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
358	Ultrasensitive Detection of 2,4-Dinitrophenol Using Nanowire Biosensor
359	Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
360	Unexpectedly High Minority-Carrier Lifetimes Exceeding 20 ms Measured on 1.4-Ohm cm n-Type Silicon Wafers
361	Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
362	Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
363	Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
364	Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors
365	Very high frequency plasma reactant for atomic layer deposition
366	Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
367	Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
368	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
369	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
370	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
371	Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
372	Atomic layer deposition of aluminum fluoride using Al(CH3)3 and SF6 plasma
373	Atomic layer epitaxy for quantum well nitride-based devices
374	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
375	Perspectives on future directions in III-N semiconductor research
376	Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
377	823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
378	A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
379	ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
380	AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
381	AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
382	Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
383	Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
384	Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
385	Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
386	Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
387	Atomic layer epitaxy for quantum well nitride-based devices
388	Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
389	Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
390	Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
391	Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
392	Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
393	Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
394	Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
395	Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
396	Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
397	Crystalline growth of AlN thin films by atomic layer deposition
398	Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
399	Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
400	Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
401	Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
402	Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
403	Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
404	Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
405	Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
406	Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
407	GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
408	GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
409	Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
410	Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
411	Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
412	Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
413	Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
414	Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
415	High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
416	High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
417	High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
418	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
419	Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
420	Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
421	Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
422	Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
423	Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
424	Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
425	Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
426	Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
427	Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
428	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
429	Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
430	Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
431	New materials for memristive switching
432	Nitride memristors
433	Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
434	Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
435	Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
436	PEALD AlN: controlling growth and film crystallinity
437	PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
438	Perspectives on future directions in III-N semiconductor research
439	Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
440	Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
441	Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
442	Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
443	Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
444	Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
445	Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
446	Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
447	Properties of AlN grown by plasma enhanced atomic layer deposition
448	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
449	Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow-cathode plasma-assisted atomic layer deposition
450	Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
451	Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
452	Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
453	Silicon surface passivation with atomic layer deposited aluminum nitride
454	Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
455	Structural and optical characterization of low-temperature ALD crystalline AlN
456	Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
457	Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
458	Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
459	Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
460	The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
461	The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
462	Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
463	Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
464	TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
465	XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
466	Improvements on Interface Reliability and Capacitance Dispersion of Fluorinated ALD-Al2O3 Gate Dielectrics by CF4 Plasma Treatment
467	Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
468	Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
469	Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
470	Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
471	Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
472	Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
473	Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
474	Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
475	Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
476	Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
477	Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
478	Plasma enhanced atomic layer deposition of aluminum sulfide thin films
479	Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
480	Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
481	Composite materials and nanoporous thin layers made by atomic layer deposition
482	Electrical Properties of Aluminum Silicate Films Grown by Plasma Enhanced Atomic Layer Deposition
483	Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
484	Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
485	Effect of Al2O3 insertion on the electrical properties of SrTiO3 thin films: A comparison between Al2O3-doped SrTiO3 and SrTiO3/Al2O3/SrTiO3 sandwich structure
486	Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition
487	Characteristics of AlxTi1-xOy Films Grown by Plasma-Enhanced Atomic Layer Deposition
488	Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal
489	Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
490	Optical and Electrical Properties of AlxTi1-xO Films
491	Plasma enhanced atomic layer batch processing of aluminum doped titanium dioxide
492	Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
493	Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
494	Breakdown and Protection of ALD Moisture Barrier Thin Films
495	Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
496	A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
497	Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
498	Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
499	The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
500	Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
501	Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
502	Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
503	Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
504	Tribological properties of thin films made by atomic layer deposition sliding against silicon
505	Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
506	Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
507	Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition

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