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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators

Type:
Journal
Info:
Journal of Applied Physics 107, 114505 (2010)
Date:
2010-04-21
DOI:
http://dx.doi.org/10.1063/1.3431349

Author Information

Name Institution
P. S. WaggonerCornell University
C. P. TanCornell University
H. G. CraigheadCornell University

Films

Plasma SiO2

Hardware used: Oxford Instruments FlexAL
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 110C

Plasma AlN

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

Si3N4

Notes

1469