AlN Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing AlN films returned 112 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode
2823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
3A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
4A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
5ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
6AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
7AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
8AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film
9Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
10Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
11Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
12Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
13Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
14Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
15Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
16Atomic layer epitaxy for quantum well nitride-based devices
17Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
18Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
19Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition
20Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
21Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
22Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
23Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
24Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
25Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
26Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
27Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
28Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
29Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
30Crystalline growth of AlN thin films by atomic layer deposition
31Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
32Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
33Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
34Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation
35Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
36Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
37Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
38Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
39Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
40Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
41Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
42Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
43Formation of aluminum nitride thin films as gate dielectrics on Si(100)
44GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
45GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
46Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
47Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
48Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
49Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
50Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
51Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
52Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
53High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
54High performance AlGaN/GaN HEMTs with AlN/SiNx passivation
55High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
56High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
57Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
58Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
59Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
60Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
61Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
62Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
63Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
64Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
65Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
66Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
67Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
68Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
69Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
70Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
71New materials for memristive switching
72Nitride memristors
73Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
74Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
75Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
76PEALD AlN: controlling growth and film crystallinity
77PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
78Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer
79Perspectives on future directions in III-N semiconductor research
80Plasma Enhanced Atomic Layer Deposition on Powders
81Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
82Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
83Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
84Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
85Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
86Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
87Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
88Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
89Properties of AlN grown by plasma enhanced atomic layer deposition
90Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
91Radical Enhanced Atomic Layer Deposition of Metals and Oxides
92Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow-cathode plasma-assisted atomic layer deposition
93Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
94Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
95Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
96Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices
97Silicon surface passivation with atomic layer deposited aluminum nitride
98Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
99Structural and optical characterization of low-temperature ALD crystalline AlN
100Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
101Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
102Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
103Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
104Template-assisted synthesis of III-nitride and metal-oxide nano-heterostructures using low-temperature atomic layer deposition for energy, sensing, and catalysis applications (Presentation Recording)
105Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
106The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
107The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
108Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
109Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
110TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
111Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
112XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition


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