1 | Properties of AlN grown by plasma enhanced atomic layer deposition |
2 | Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
3 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy |
4 | Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films |
5 | PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity |
6 | Sub-nanometer heating depth of atomic layer annealing |
7 | Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition |
8 | Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy |
9 | Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices |
10 | Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition |
11 | Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition |
12 | Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures |
13 | Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess |
14 | Experimental and theoretical determination of the role of ions in atomic layer annealing |
15 | Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes |
16 | Growth of aluminum nitride films by plasma-enhanced atomic layer deposition |
17 | Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy |
18 | Crystalline growth of AlN thin films by atomic layer deposition |
19 | Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition |
20 | Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition |
21 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
22 | Plasma Enhanced Atomic Layer Deposition on Powders |
23 | Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric |
24 | New materials for memristive switching |
25 | Atomic layer epitaxy for quantum well nitride-based devices |
26 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
27 | AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms |
28 | Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 |
29 | Formation of aluminum nitride thin films as gate dielectrics on Si(100) |
30 | Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack |
31 | A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition |
32 | High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning |
33 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
34 | Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method |
35 | TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition |
36 | Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric |
37 | Perspectives on future directions in III-N semiconductor research |
38 | High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
39 | Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition |
40 | Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process |
41 | Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer |
42 | Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures |
43 | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
44 | Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition |
45 | Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films |
46 | GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation |
47 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
48 | Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources |
49 | AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film |
50 | Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices |
51 | Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs |
52 | GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride |
53 | Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing |
54 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
55 | Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor |
56 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
57 | Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer |
58 | PEALD AlN: controlling growth and film crystallinity |
59 | Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer |
60 | Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures |
61 | Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods |
62 | Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation |
63 | Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition |
64 | 650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode |
65 | Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators |
66 | Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition |
67 | Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN |
68 | XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition |
69 | Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma |
70 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
71 | Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition |
72 | Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics |
73 | Nitride memristors |
74 | Structural and optical characterization of low-temperature ALD crystalline AlN |
75 | High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy |
76 | Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering |
77 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
78 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
79 | AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing |
80 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
81 | Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures |
82 | The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition |
83 | Surface passivation of GaAs nanowires by the atomic layer deposition of AlN |
84 | Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy |
85 | Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films |
86 | Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition |
87 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
88 | Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN |
89 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |
90 | Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT |
91 | Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs |
92 | Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films |
93 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
94 | 823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric |
95 | Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces |
96 | Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition |
97 | Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition |
98 | 600 V High-Performance AlGaN/GaN HEMTs with AlN/SiNx Passivation |
99 | Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers |
100 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
101 | Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas |
102 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
103 | Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer |
104 | Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
105 | Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma |
106 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
107 | Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films |
108 | Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design |
109 | High performance AlGaN/GaN HEMTs with AlN/SiNx passivation |
110 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
111 | Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition |
112 | Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition |
113 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
114 | Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition |
115 | Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia |
116 | Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties |
117 | Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer |
118 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
119 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
120 | ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs |
121 | Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
122 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
123 | Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation |
124 | Silicon surface passivation with atomic layer deposited aluminum nitride |
125 | A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs |