AlN Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing AlN films returned 139 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Protective capping and surface passivation of III-V nanowires by atomic layer deposition
2Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
3PEALD AlN: controlling growth and film crystallinity
4High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
5Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
6Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
7A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
8Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
9New materials for memristive switching
10Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
11Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
12XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
13Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
14Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
15Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
16AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
17Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
18Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer
19Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
20Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
21Silicon surface passivation with atomic layer deposited aluminum nitride
22Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
23Nitride memristors
24Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
25Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
26Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
27Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
28A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
29Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
30Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
31Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
32Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
33High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
34Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
35Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices
36Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
37Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
38Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
39Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
40GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
41Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
42ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
43Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
44Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
45AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
46GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
47Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
48Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
49Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
50Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
51Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
52600 V High-Performance AlGaN/GaN HEMTs with AlN/SiNx Passivation
53Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
54A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
55Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
56823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
57Plasma Enhanced Atomic Layer Deposition on Powders
58Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
59Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
60Experimental and theoretical determination of the role of ions in atomic layer annealing
61Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
62Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
63Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
64Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
65Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
66Properties of AlN grown by plasma enhanced atomic layer deposition
67650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode
68PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
69Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition
70Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
71Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
72Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
73The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
74Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
75AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
76Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
77Formation of aluminum nitride thin films as gate dielectrics on Si(100)
78The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
79Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
80Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
81Atomic layer epitaxy for quantum well nitride-based devices
82Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
83Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
84Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
85Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
86A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
87Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
88Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
89Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
90Crystalline growth of AlN thin films by atomic layer deposition
91TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
92Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
93Radical Enhanced Atomic Layer Deposition of Metals and Oxides
94Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
95Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
96High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
97Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
98High performance AlGaN/GaN HEMTs with AlN/SiNx passivation
99Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
100Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer
101Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
102Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
103Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation
104Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
105AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film
106Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
107Perspectives on future directions in III-N semiconductor research
108Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
109Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
110Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
111Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
112Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
113Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
114Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
115Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
116Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
117Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
118Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
119Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
120AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
121Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
122Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
123Structural and optical characterization of low-temperature ALD crystalline AlN
124Sub-nanometer heating depth of atomic layer annealing
125Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures