AlN Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing AlN films returned 139 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
2Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
3Nitride memristors
4Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
5Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
6Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
7Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
8AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
9Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
10Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
11Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
12Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
13Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
14Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
15PEALD AlN: controlling growth and film crystallinity
16Formation of aluminum nitride thin films as gate dielectrics on Si(100)
17Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
18Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
19Atomic layer epitaxy for quantum well nitride-based devices
20Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
21Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
22Properties of AlN grown by plasma enhanced atomic layer deposition
23PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
24New materials for memristive switching
25Experimental and theoretical determination of the role of ions in atomic layer annealing
26Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
27Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
28Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
29A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
30Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
31Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
32600 V High-Performance AlGaN/GaN HEMTs with AlN/SiNx Passivation
33Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
34Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
35Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
36ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
37Perspectives on future directions in III-N semiconductor research
38Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
39High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
40Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
41Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
42Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
43Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
44Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation
45Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
46Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
47Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
48650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode
49Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
50Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
51Silicon surface passivation with atomic layer deposited aluminum nitride
52Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
53Plasma Enhanced Atomic Layer Deposition on Powders
54Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
55Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
56Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
57Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
58Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
59Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
60Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
61Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
62High performance AlGaN/GaN HEMTs with AlN/SiNx passivation
63Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
64Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
65Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
66Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
67A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
68The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
69XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
70Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
71Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
72Structural and optical characterization of low-temperature ALD crystalline AlN
73Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
74A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
75Radical Enhanced Atomic Layer Deposition of Metals and Oxides
76High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
77Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer
78AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
79Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
80GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
81A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
82AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
83GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
84Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
85Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
86Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
87Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
88Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
89Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
90Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
91High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
92Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
93TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
94Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
95Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
96Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
97Protective capping and surface passivation of III-V nanowires by atomic layer deposition
98823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
99Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
100Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
101Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
102Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
103Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
104Sub-nanometer heating depth of atomic layer annealing
105Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
106Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
107Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
108Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
109AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film
110Crystalline growth of AlN thin films by atomic layer deposition
111AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
112Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition
113Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
114Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
115Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
116Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer
117Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
118Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
119Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
120Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
121Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
122Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices
123Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
124Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
125Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method