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AlN Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing AlN films returned 139 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
2Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices
3Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
4High performance AlGaN/GaN HEMTs with AlN/SiNx passivation
5Protective capping and surface passivation of III-V nanowires by atomic layer deposition
6Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
7Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
8Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
9AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
10Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
11Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition
12Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
13Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
14Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
15Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
16Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
17Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
18High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
19Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
20Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
21Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
22Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
23Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
24Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
25Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
26Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
27The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
28Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
29Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
30Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
31650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode
32Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
33Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
34High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
35Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation
36Sub-nanometer heating depth of atomic layer annealing
37High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
38Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
39Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
40Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
41Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
42Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
43Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
44Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
45Properties of AlN grown by plasma enhanced atomic layer deposition
46Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
47Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
48AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film
49Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
50Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
51Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
52The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
53Formation of aluminum nitride thin films as gate dielectrics on Si(100)
54Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
55Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
56Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
57Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
58Atomic layer epitaxy for quantum well nitride-based devices
59Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
60A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
61Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
62Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
63A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
64Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
65PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
66Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
67Structural and optical characterization of low-temperature ALD crystalline AlN
68Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
69Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
70Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
71Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
72Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
73Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
74Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
75Crystalline growth of AlN thin films by atomic layer deposition
76Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
77Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
78Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
79XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
80Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
81Perspectives on future directions in III-N semiconductor research
82Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
83Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
84Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
85Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
86Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
87PEALD AlN: controlling growth and film crystallinity
88Experimental and theoretical determination of the role of ions in atomic layer annealing
89Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
90A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
91Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
92Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
93Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
94Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
95AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
96ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
97600 V High-Performance AlGaN/GaN HEMTs with AlN/SiNx Passivation
98Plasma Enhanced Atomic Layer Deposition on Powders
99Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
100Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
101Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
102Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
103AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
104Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
105Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
106Radical Enhanced Atomic Layer Deposition of Metals and Oxides
107AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
108Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
109Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer
110New materials for memristive switching
111Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer
112Nitride memristors
113Silicon surface passivation with atomic layer deposited aluminum nitride
114Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
115Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
116Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
117823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
118TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
119A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
120Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
121Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
122GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
123GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
124Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
125Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition