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AlN Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing AlN films returned 99 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
2A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
3ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
4AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
5AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
6AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film
7Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
8Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
9Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
10Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
11Atomic layer epitaxy for quantum well nitride-based devices
12Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
13Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
14Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition
15Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
16Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
17Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
18Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
19Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
20Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
21Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
22Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
23Crystalline growth of AlN thin films by atomic layer deposition
24Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
25Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
26Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation
27Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
28Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
29Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
30Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
31Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
32Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
33Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
34Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
35GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
36GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
37Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
38Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
39Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
40Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
41Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
42High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
43High performance AlGaN/GaN HEMTs with AlN/SiNx passivation
44High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
45High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
46Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
47Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
48Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
49Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
50Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
51Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
52Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
53Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
54Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
55Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
56Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
57Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
58Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
59Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
60New materials for memristive switching
61Nitride memristors
62Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
63Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
64Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
65PEALD AlN: controlling growth and film crystallinity
66PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
67Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer
68Perspectives on future directions in III-N semiconductor research
69Plasma Enhanced Atomic Layer Deposition on Powders
70Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
71Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
72Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
73Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
74Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
75Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
76Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
77Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
78Properties of AlN grown by plasma enhanced atomic layer deposition
79Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
80Radical Enhanced Atomic Layer Deposition of Metals and Oxides
81Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
82Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
83Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
84Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices
85Silicon surface passivation with atomic layer deposited aluminum nitride
86Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
87Structural and optical characterization of low-temperature ALD crystalline AlN
88Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
89Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
90Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
91Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
92Template-assisted synthesis of III-nitride and metal-oxide nano-heterostructures using low-temperature atomic layer deposition for energy, sensing, and catalysis applications (Presentation Recording)
93Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
94The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
95The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
96Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
97TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
98Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
99XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition

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