Publication Information

Title: Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

Type: Journal

Info: Journal of Applied Physics 111, 063511 (2012)

Date: 2012-02-14

DOI: http://dx.doi.org/10.1063/1.3694798

Author Information

Name

Institution

Aalto University

Aalto University

Aalto University

Aalto University

Aalto University

Films

Plasma AlN using Unknown

Deposition Temperature Range = 150-250C

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Photoluminescence

PL, PhotoLuminescence

-

Lifetime

TRPL, Time Resolved PhotoLuminescence

-

Substrates

InGaAs

Keywords

Photoluminescence

Notes

636



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