Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Applied Physics 111, 063511 (2012)
Date:
2012-02-14

Author Information

Name Institution
Päivi MattilaAalto University
Markus BosundAalto University
Teppo HuhtioAalto University
Harri LipsanenAalto University
M. SopanenAalto University

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence

Characteristic: Lifetime
Analysis: TRPL, Time Resolved PhotoLuminescence

Substrates

InGaAs

Notes

636