Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Applied Physics 111, 063511 (2012)
Date:
2012-02-14
DOI:
http://dx.doi.org/10.1063/1.3694798

Author Information

Name Institution
Päivi MattilaAalto University
Markus BosundAalto University
Teppo HuhtioAalto University
Harri LipsanenAalto University
M. SopanenAalto University

Films

Plasma AlN

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 150-250C

Film/Plasma Properties

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: -

Characteristic: Lifetime
Analysis: TRPL, Time Resolved PhotoLuminescence
Diagnostic: -

Substrates

InGaAs

Notes

636