Harri Lipsanen Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Harri Lipsanen returned 18 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
2Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
3Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
4Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
5Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
6GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
7High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
8Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
9Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
10Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
11Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
12Properties of AlN grown by plasma enhanced atomic layer deposition
13Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
14Protective capping and surface passivation of III-V nanowires by atomic layer deposition
15Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
16Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
17Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
18Tribological properties of thin films made by atomic layer deposition sliding against silicon