About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Harri Lipsanen Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Harri Lipsanen returned 19 record(s).

NumberTitle
1Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
2Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
3Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
4Properties of AlN grown by plasma enhanced atomic layer deposition
5Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
6Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
7Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition
8Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
9High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
10Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
11Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
12Influence of plasma parameters on the properties of ultrathin Al2O3 films prepared by plasma enhanced atomic layer deposition below 100C for moisture barrier applications
13GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
14Tribological properties of thin films made by atomic layer deposition sliding against silicon
15Protective capping and surface passivation of III-V nanowires by atomic layer deposition
16Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
17Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
18Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
19Surface passivation of GaAs nanowires by the atomic layer deposition of AlN