
GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
Type:
Journal
Info:
Applied Surface Science 256 (2010) 7434-7437
Date:
2010-05-24
Author Information
Name | Institution |
---|---|
Markus Bosund | Aalto University |
Päivi Mattila | Aalto University |
A. Aierken | Aalto University |
T. Hakkarainen | Aalto University |
H. Koskenvaara | Aalto University |
M. Sopanen | Aalto University |
Veli-Matti Airaksinen | Aalto University |
Harri Lipsanen | Aalto University |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Substrates
InGaAs |
GaAs |
Silicon |
Notes
Beneq TFS-500 PEALD AlN for GaAs surface passivation. |
174 |