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GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride

Type:
Journal
Info:
Applied Surface Science 256 (2010) 7434-7437
Date:
2010-05-24
DOI:
http://dx.doi.org/10.1016/j.apsusc.2010.05.085

Author Information

Name Institution
Markus BosundAalto University
Päivi MattilaAalto University
A. AierkenAalto University
T. HakkarainenAalto University
H. KoskenvaaraAalto University
M. SopanenAalto University
Veli-Matti AiraksinenAalto University
Harri LipsanenAalto University

Films

Plasma AlN

Hardware used: Beneq TFS-500
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: Custom

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: LEO 1560 SEM/EDX

Substrates

InGaAs
GaAs
Silicon

Notes

Beneq TFS-500 PEALD AlN for GaAs surface passivation.
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