NH3, Ammonia, CAS# 7664-41-7

Where to buy

NumberVendorRegionLink
1Yoodatech (Shanghai) Co., LtdNH3, Ammonia - contact maggie@yoodatech.com

www.plasma-ald.com does not endorse any chemical suppliers. These links are provided for the benefit of our users. If a link goes bad, let us know.

If you would like your company's precursor products listed, or your existing listing changed or removed, send me an email.


Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 278 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer deposition of GaN at low temperatures
2Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
3Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
4Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
5Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
6Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
7The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
8The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
9Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
10High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
11Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
12Trilayer Tunnel Selectors for Memristor Memory Cells
13Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
14Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
15Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
16Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
17Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
18Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
19Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
20The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
21WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
22Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
23Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
24A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
25Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
26Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
27Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
28Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
29Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
30Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
31Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
32Texture of atomic layer deposited ruthenium
33Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
34Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
35Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
36Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
37In-gap states in titanium dioxide and oxynitride atomic layer deposited films
38Formation of aluminum nitride thin films as gate dielectrics on Si(100)
39Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
40Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
41Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
42NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
43Protective capping and surface passivation of III-V nanowires by atomic layer deposition
44Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
45P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
46The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
47Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
48Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
49Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
50Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
51Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
52A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
53Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
54Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
55Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
56Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
57Plasma-enhanced atomic layer deposition of tungsten nitride
58In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
59Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
60Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
61Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
62P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
63Silicon surface passivation with atomic layer deposited aluminum nitride
64TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
65Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
66Tribological properties of thin films made by atomic layer deposition sliding against silicon
67Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
68Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
69Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
70Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
71Tribological properties of thin films made by atomic layer deposition sliding against silicon
72Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
73Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
74Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
75Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
76Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
77Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
78Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
79Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
80Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
81Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
82Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
83Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
84Texture of atomic layer deposited ruthenium
85Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
86Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
87Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
88The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
89TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
90Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
91Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
92Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
93A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
94Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
95Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
96Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
97Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
98Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor
99Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
100Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
101Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
102Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
103Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
104In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
105Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
106Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
107Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
108Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
109AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
110Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
111Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
112A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
113Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
114Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
115Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
116Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
117Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
118Layer-by-layer epitaxial growth of GaN at low temperatures
119Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
120Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
121Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
122Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
123Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
124Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
125Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
126The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
127Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
128The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
129Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
130Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
131Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
132Properties of AlN grown by plasma enhanced atomic layer deposition
133Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
134Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
135Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
136Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
137Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
138Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
139High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
140Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
141Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
142Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
143Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
144Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
145Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
146Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
147In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
148Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
149Tribological properties of thin films made by atomic layer deposition sliding against silicon
150Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
151Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
152High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
153Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
154In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
155Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
156Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
157Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
158Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
159Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
160Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
161Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
162Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
163Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
164Ru thin film grown on TaN by plasma enhanced atomic layer deposition
165Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
166Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
167Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
168Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition
169Crystalline growth of AlN thin films by atomic layer deposition
170Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
171Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
172Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
173PEALD AlN: controlling growth and film crystallinity
174Self-Limiting Growth of GaN at Low Temperatures
175Protective capping and surface passivation of III-V nanowires by atomic layer deposition
176Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
177Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
178Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
179Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
180Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
181Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
182Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
183Protective capping and surface passivation of III-V nanowires by atomic layer deposition
184Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
185Analysis of nitrogen species in titanium oxynitride ALD films
186Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
187Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
188Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
189Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
190Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
191Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
192Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
193Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
194Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
195Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
196823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
197Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
198Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
199A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
200A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
201Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
202Challenges in spacer process development for leading-edge high-k metal gate technology
203Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
204Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
205Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
206Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
207Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
208Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
209TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
210Atomic layer deposition of InN using trimethylindium and ammonia plasma
211Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
212Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
213P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
214Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
215Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
216A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
217Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
218Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
219Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
220Nitride passivation of the interface between high-k dielectrics and SiGe
221A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
222Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
223Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
224Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
225Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
226Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
227GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
228Plasma-enhanced ALD system for SRF cavity
229Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate
230Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
231Formation of Ni silicide from atomic layer deposited Ni
232Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
233Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
234AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
235Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
236Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
237Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
238Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
239Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
240Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
241Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
242Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
243Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
244Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
245The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
246Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
247Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
248Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
249Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
250Ru thin film grown on TaN by plasma enhanced atomic layer deposition
251Plasma-Enhanced Atomic Layer Deposition of Ni
252Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
253Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
254Atomic layer deposition of titanium nitride from TDMAT precursor
255Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
256PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
257Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
258In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
259Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
260Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
261Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
262Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
263Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
264Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
265Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
266Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films