| 1 | Silicon surface passivation with atomic layer deposited aluminum nitride |
| 2 | Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization |
| 3 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
| 4 | Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition |
| 5 | Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures |
| 6 | Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers |
| 7 | Plasma-enhanced atomic layer deposition of tungsten nitride |
| 8 | Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 9 | Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment |
| 10 | Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 11 | TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition |
| 12 | Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate |
| 13 | Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors |
| 14 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
| 15 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma |
| 16 | Nitride passivation of the interface between high-k dielectrics and SiGe |
| 17 | Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma |
| 18 | Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition |
| 19 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 20 | Crystalline growth of AlN thin films by atomic layer deposition |
| 21 | Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions |
| 22 | Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers |
| 23 | Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma |
| 24 | Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films |
| 25 | Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma |
| 26 | NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors |
| 27 | Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films |
| 28 | Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel |
| 29 | A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu |
| 30 | WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications |
| 31 | TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition |
| 32 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
| 33 | High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning |
| 34 | In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition |
| 35 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 36 | Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition |
| 37 | Layer-by-layer epitaxial growth of GaN at low temperatures |
| 38 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
| 39 | Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process |
| 40 | Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing |
| 41 | Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition |
| 42 | Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System |
| 43 | Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks |
| 44 | Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes |
| 45 | Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell |
| 46 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 47 | Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier |
| 48 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 49 | A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films |
| 50 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
| 51 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
| 52 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 53 | Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu |
| 54 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 55 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
| 56 | Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas |
| 57 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 58 | Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects |
| 59 | Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects |
| 60 | Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition |
| 61 | PEALD AlN: controlling growth and film crystallinity |
| 62 | Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si |
| 63 | Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor |
| 64 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
| 65 | Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition |
| 66 | Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics |
| 67 | Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric |
| 68 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 69 | The Properties of Cu Thin Films on Ru Depending on the ALD Temperature |
| 70 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 71 | In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential |
| 72 | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
| 73 | Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants |
| 74 | Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation |
| 75 | Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition |
| 76 | Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer |
| 77 | Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2 |
| 78 | In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics |
| 79 | Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets |
| 80 | Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics |
| 81 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 82 | Ru thin film grown on TaN by plasma enhanced atomic layer deposition |
| 83 | A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films |
| 84 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
| 85 | Self-Limiting Growth of GaN at Low Temperatures |
| 86 | Trilayer Tunnel Selectors for Memristor Memory Cells |
| 87 | Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition |
| 88 | Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant |
| 89 | Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition |
| 90 | Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications |
| 91 | 823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric |
| 92 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 93 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
| 94 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 95 | GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride |
| 96 | Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition |
| 97 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
| 98 | Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma |
| 99 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
| 100 | Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride |
| 101 | A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment |
| 102 | Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition |
| 103 | Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects |
| 104 | Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition |
| 105 | Plasma-enhanced ALD system for SRF cavity |
| 106 | Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion |
| 107 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
| 108 | Texture of atomic layer deposited ruthenium |
| 109 | Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition |
| 110 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
| 111 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
| 112 | Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride |
| 113 | Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu |
| 114 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 115 | Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate |
| 116 | High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 117 | Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers |
| 118 | Challenges in spacer process development for leading-edge high-k metal gate technology |
| 119 | Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 120 | Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications |
| 121 | Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect |
| 122 | Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design |
| 123 | Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices |
| 124 | Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor |
| 125 | Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study |
| 126 | Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects |
| 127 | Formation of aluminum nitride thin films as gate dielectrics on Si(100) |
| 128 | Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas |
| 129 | Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films |
| 130 | Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films |
| 131 | Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition |
| 132 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
| 133 | Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia |
| 134 | Analysis of nitrogen species in titanium oxynitride ALD films |
| 135 | In-gap states in titanium dioxide and oxynitride atomic layer deposited films |
| 136 | Atomic Layer Deposition of SiN for spacer applications in high-end logic devices |
| 137 | Atomic layer deposition of titanium nitride from TDMAT precursor |
| 138 | Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films |
| 139 | Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride |
| 140 | Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition |
| 141 | Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition |
| 142 | Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process |
| 143 | Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases |
| 144 | The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition |
| 145 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
| 146 | Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications |
| 147 | Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors |
| 148 | AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs |
| 149 | Surface passivation of GaAs nanowires by the atomic layer deposition of AlN |
| 150 | Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications |
| 151 | Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 152 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
| 153 | Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 154 | Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition |
| 155 | A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect |
| 156 | Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia |
| 157 | Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer |
| 158 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
| 159 | Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate |
| 160 | PEALD of a Ruthenium Adhesion Layer for Copper Interconnects |
| 161 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 162 | Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces |
| 163 | Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method |
| 164 | Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction |
| 165 | Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs |
| 166 | Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 167 | Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia |
| 168 | Atomic layer deposition of InN using trimethylindium and ammonia plasma |
| 169 | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
| 170 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 171 | Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications |
| 172 | Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition |
| 173 | The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer |
| 174 | Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers |
| 175 | Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures |
| 176 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
| 177 | Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma |
| 178 | Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack |
| 179 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 180 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 181 | Atomic layer deposition of GaN at low temperatures |
| 182 | Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier |
| 183 | Evaluation of Stress Induced by Plasma Assisted ALD SiN Film |
| 184 | Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition |
| 185 | Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition |
| 186 | Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition |
| 187 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor |
| 188 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 189 | Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier |
| 190 | Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia |
| 191 | Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition |
| 192 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
| 193 | Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy |
| 194 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 195 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
| 196 | Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping |
| 197 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 198 | Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition |
| 199 | Properties of AlN grown by plasma enhanced atomic layer deposition |
| 200 | Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 201 | Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier |
| 202 | Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity |
| 203 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
| 204 | Texture of atomic layer deposited ruthenium |
| 205 | Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer |
| 206 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |
| 207 | Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition |
| 208 | Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films |
| 209 | Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu |
| 210 | Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition |
| 211 | Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects |
| 212 | In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films |
| 213 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
| 214 | Atomic layer controlled deposition of silicon nitride with self-limiting mechanism |
| 215 | Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant |
| 216 | A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs |
| 217 | Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition |
| 218 | Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application |
| 219 | The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology |
| 220 | Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition |
| 221 | Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu |
| 222 | Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films |
| 223 | Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects |
| 224 | Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy |
| 225 | Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition |
| 226 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
| 227 | Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor |
| 228 | Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications |
| 229 | Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System |
| 230 | Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride |
| 231 | Ru thin film grown on TaN by plasma enhanced atomic layer deposition |
| 232 | Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant |
| 233 | Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten |
| 234 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 235 | Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition |
| 236 | The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications |
| 237 | Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics |
| 238 | Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes |
| 239 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
| 240 | Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor |
| 241 | Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex |
| 242 | Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources |
| 243 | Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma |
| 244 | Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory |
| 245 | Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique |
| 246 | Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source |
| 247 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
| 248 | Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing |
| 249 | Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt |
| 250 | Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition |
| 251 | Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers |
| 252 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor |
| 253 | The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2 |
| 254 | Plasma-Enhanced Atomic Layer Deposition of Ni |
| 255 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
| 256 | Formation of Ni silicide from atomic layer deposited Ni |
| 257 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 258 | Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect |
| 259 | Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition |
| 260 | Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3 |
| 261 | Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition |
| 262 | Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3 |
| 263 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
| 264 | The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films |
| 265 | Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer |
| 266 | Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization |
