NH₃, Ammonia, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 215 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
2	Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
3	In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
4	Nitride passivation of the interface between high-k dielectrics and SiGe
5	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
6	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
7	823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
8	A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
9	A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
10	AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
11	Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
12	Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
13	Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
14	Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
15	Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
16	Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
17	Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
18	Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
19	Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
20	Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
21	Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
22	Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
23	Crystalline growth of AlN thin films by atomic layer deposition
24	Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
25	Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
26	Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
27	Formation of aluminum nitride thin films as gate dielectrics on Si(100)
28	GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
29	Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
30	Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
31	High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
32	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
33	Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
34	Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
35	Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
36	Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
37	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
38	Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
39	Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
40	Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
41	PEALD AlN: controlling growth and film crystallinity
42	Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
43	Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
44	Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
45	Properties of AlN grown by plasma enhanced atomic layer deposition
46	Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
47	Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
48	Silicon surface passivation with atomic layer deposited aluminum nitride
49	Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
50	Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
51	Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
52	Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
53	The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
54	The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
55	Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
56	Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
57	TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
58	Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
59	Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
60	Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
61	Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
62	Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
63	Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
64	Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
65	High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
66	Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
67	Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
68	Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
69	Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
70	Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
71	Atomic layer deposition of GaN at low temperatures
72	Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
73	Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
74	Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
75	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
76	Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
77	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
78	Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
79	Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
80	Self-Limiting Growth of GaN at Low Temperatures
81	Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
82	Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
83	Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
84	Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
85	A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
86	Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
87	Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
88	Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
89	Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
90	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
91	Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
92	Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
93	Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
94	Plasma-enhanced ALD system for SRF cavity
95	Tribological properties of thin films made by atomic layer deposition sliding against silicon
96	Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
97	Formation of Ni silicide from atomic layer deposited Ni
98	Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
99	Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
100	Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
101	Plasma-Enhanced Atomic Layer Deposition of Ni
102	Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
103	Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
104	Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
105	Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
106	A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
107	Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
108	Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
109	Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
110	Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
111	Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
112	Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
113	Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
114	Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
115	Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
116	Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
117	PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
118	Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
119	Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
120	Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
121	Ru thin film grown on TaN by plasma enhanced atomic layer deposition
122	Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
123	The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
124	The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
125	Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
126	Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
127	Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
128	Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
129	Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
130	Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
131	Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
132	Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
133	A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
134	Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
135	Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
136	Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
137	Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
138	Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
139	Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
140	Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
141	Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
142	Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
143	Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
144	Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
145	The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
146	Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
147	The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
148	A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
149	Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
150	Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
151	Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
152	Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
153	High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
154	Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
155	Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
156	Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
157	Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
158	Ru thin film grown on TaN by plasma enhanced atomic layer deposition
159	Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
160	Trilayer Tunnel Selectors for Memristor Memory Cells
161	Tribological properties of thin films made by atomic layer deposition sliding against silicon
162	Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
163	Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
164	Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
165	Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
166	Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
167	Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
168	Atomic layer deposition of titanium nitride from TDMAT precursor
169	Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
170	Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
171	Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
172	Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
173	Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
174	Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
175	Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
176	Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
177	In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
178	Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
179	NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
180	Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
181	Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
182	Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
183	Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
184	Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
185	Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
186	Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
187	Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
188	Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
189	Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
190	Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
191	Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
192	TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
193	TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
194	Tribological properties of thin films made by atomic layer deposition sliding against silicon
195	Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
196	Analysis of nitrogen species in titanium oxynitride ALD films
197	Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
198	In-gap states in titanium dioxide and oxynitride atomic layer deposited films
199	Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
200	Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
201	Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
202	Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
203	Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
204	Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
205	A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
206	Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
207	Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
208	Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
209	Plasma-enhanced atomic layer deposition of tungsten nitride
210	Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
211	WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
212	Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
213	Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
214	Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
215	Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics

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