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Ammonia, NH3, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 177 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
2Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
3Nitride passivation of the interface between high-k dielectrics and SiGe
4Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
5Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
6A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
7A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
8AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
9Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
10Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
11Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
12Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
13Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
14Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
15Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
16Crystalline growth of AlN thin films by atomic layer deposition
17Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
18Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
19Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
20GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
21Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
22High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
23Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
24Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
25Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
26Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
27Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
28Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
29Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
30Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
31Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
32PEALD AlN: controlling growth and film crystallinity
33Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
34Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
35Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
36Properties of AlN grown by plasma enhanced atomic layer deposition
37Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
38Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
39Silicon surface passivation with atomic layer deposited aluminum nitride
40Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
41Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
42Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
43Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
44The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
45The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
46Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
47TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
48Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
49Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
50Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
51Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
52Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
53Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
54Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
55High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
56Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
57Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
58Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
59Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
60Atomic layer deposition of GaN at low temperatures
61Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
62Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
63Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
64Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
65Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
66Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
67Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
68Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
69Self-Limiting Growth of GaN at Low Temperatures
70Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
71Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
72Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
73Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
74A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
75Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
76Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
77Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
78Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
79Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
80Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
81Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
82Plasma-enhanced ALD system for SRF cavity
83Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
84Formation of Ni silicide from atomic layer deposited Ni
85Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
86Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
87Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
88Plasma-Enhanced Atomic Layer Deposition of Ni
89Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
90Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
91Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
92Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
93Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
94Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
95Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
96Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
97Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
98Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
99Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
100PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
101Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
102Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
103Ru thin film grown on TaN by plasma enhanced atomic layer deposition
104Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
105The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
106The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
107Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
108Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
109Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
110Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
111Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
112Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
113Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
114Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
115Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
116Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
117Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
118Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
119Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
120Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
121Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
122Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
123Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
124Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
125The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
126Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
127The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
128Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
129Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
130Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
131Ru thin film grown on TaN by plasma enhanced atomic layer deposition
132Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
133Trilayer Tunnel Selectors for Memristor Memory Cells
134Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
135Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
136Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
137Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
138Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
139Atomic layer deposition of titanium nitride from TDMAT precursor
140Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
141Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
142Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
143Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
144Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
145Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
146Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
147Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
148NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
149Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
150Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
151Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
152Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
153Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
154Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
155Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
156Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
157TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
158TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
159Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
160Analysis of nitrogen species in titanium oxynitride ALD films
161Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
162Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
163Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
164Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
165Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
166Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
167Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
168A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
169Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
170Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
171Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
172Plasma-enhanced atomic layer deposition of tungsten nitride
173Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
174Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
175Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
176Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
177Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics

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