NH3, Ammonia, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 244 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
2Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
3In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
4Nitride passivation of the interface between high-k dielectrics and SiGe
5823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
6A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
7A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
8A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
9AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
10Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
11Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
12Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
13Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
14Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
15Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
16Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
17Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
18Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
19Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
20Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
21Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
22Crystalline growth of AlN thin films by atomic layer deposition
23Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
24Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
25Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
26Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
27Formation of aluminum nitride thin films as gate dielectrics on Si(100)
28GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
29Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
30Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
31High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
32Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
33Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
34Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
35Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
36Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
37Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
38Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
39PEALD AlN: controlling growth and film crystallinity
40Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
41Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
42Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
43Properties of AlN grown by plasma enhanced atomic layer deposition
44Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
45Protective capping and surface passivation of III-V nanowires by atomic layer deposition
46Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
47Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
48Silicon surface passivation with atomic layer deposited aluminum nitride
49Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
50Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
51Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
52Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
53Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
54The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
55The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
56Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
57Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
58TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
59Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
60Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
61Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
62Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
63Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
64Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
65Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
66High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
67Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
68Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
69Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
70Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
71Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
72Atomic layer deposition of GaN at low temperatures
73Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
74Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
75Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
76Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
77Protective capping and surface passivation of III-V nanowires by atomic layer deposition
78Self-Limiting Growth of GaN at Low Temperatures
79Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
80Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
81Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
82Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
83A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
84Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
85Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
86Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
87Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
88Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
89Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
90P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
91Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
92Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
93Plasma-enhanced ALD system for SRF cavity
94Tribological properties of thin films made by atomic layer deposition sliding against silicon
95Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
96Formation of Ni silicide from atomic layer deposited Ni
97Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
98Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
99Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
100Plasma-Enhanced Atomic Layer Deposition of Ni
101Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
102Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
103Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
104Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
105A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
106Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
107Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
108Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
109Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
110Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
111Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
112Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
113Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
114Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
115Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
116Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
117Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
118Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
119PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
120Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
121Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
122Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
123Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
124Ru thin film grown on TaN by plasma enhanced atomic layer deposition
125Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
126The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
127The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
128Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
129Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
130Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
131Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
132Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
133Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
134Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
135Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
136Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
137Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
138A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
139Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
140Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
141Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
142Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
143Challenges in spacer process development for leading-edge high-k metal gate technology
144Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
145Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
146Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
147Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
148Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
149Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
150Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
151Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
152Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
153Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
154The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
155Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
156Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
157The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
158A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
159Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
160Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
161Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
162Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
163Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
164High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
165Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
166Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
167Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
168Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
169Ru thin film grown on TaN by plasma enhanced atomic layer deposition
170Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
171Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
172Trilayer Tunnel Selectors for Memristor Memory Cells
173Tribological properties of thin films made by atomic layer deposition sliding against silicon
174Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
175Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
176Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
177Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
178Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
179Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
180Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
181Atomic layer deposition of titanium nitride from TDMAT precursor
182Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
183Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
184Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
185Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
186Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
187Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
188Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
189Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
190In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
191Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
192NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
193Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
194Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
195Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
196Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
197Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
198Protective capping and surface passivation of III-V nanowires by atomic layer deposition
199Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
200Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
201Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
202Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
203Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
204Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
205Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
206TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
207TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
208Tribological properties of thin films made by atomic layer deposition sliding against silicon
209Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
210Analysis of nitrogen species in titanium oxynitride ALD films
211Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
212In-gap states in titanium dioxide and oxynitride atomic layer deposited films
213Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
214Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
215Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
216Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
217Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
218Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
219A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
220Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
221Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
222Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
223Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
224Plasma-enhanced atomic layer deposition of tungsten nitride
225Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
226WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
227P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
228Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
229P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
230Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
231Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
232Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics


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