NH3, Ammonia, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 215 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
2Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
3In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
4Nitride passivation of the interface between high-k dielectrics and SiGe
5Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
6Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
7823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
8A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
9A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
10AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
11Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
12Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
13Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
14Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
15Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
16Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
17Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
18Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
19Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
20Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
21Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
22Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
23Crystalline growth of AlN thin films by atomic layer deposition
24Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
25Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
26Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
27Formation of aluminum nitride thin films as gate dielectrics on Si(100)
28GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
29Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
30Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
31High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
32Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
33Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
34Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
35Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
36Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
37Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
38Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
39Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
40Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
41PEALD AlN: controlling growth and film crystallinity
42Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
43Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
44Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
45Properties of AlN grown by plasma enhanced atomic layer deposition
46Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
47Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
48Silicon surface passivation with atomic layer deposited aluminum nitride
49Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
50Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
51Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
52Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
53The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
54The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
55Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
56Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
57TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
58Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
59Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
60Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
61Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
62Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
63Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
64Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
65High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
66Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
67Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
68Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
69Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
70Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
71Atomic layer deposition of GaN at low temperatures
72Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
73Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
74Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
75Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
76Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
77Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
78Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
79Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
80Self-Limiting Growth of GaN at Low Temperatures
81Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
82Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
83Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
84Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
85A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
86Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
87Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
88Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
89Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
90Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
91Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
92Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
93Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
94Plasma-enhanced ALD system for SRF cavity
95Tribological properties of thin films made by atomic layer deposition sliding against silicon
96Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
97Formation of Ni silicide from atomic layer deposited Ni
98Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
99Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
100Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
101Plasma-Enhanced Atomic Layer Deposition of Ni
102Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
103Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
104Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
105Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
106A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
107Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
108Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
109Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
110Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
111Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
112Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
113Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
114Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
115Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
116Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
117PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
118Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
119Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
120Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
121Ru thin film grown on TaN by plasma enhanced atomic layer deposition
122Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
123The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
124The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
125Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
126Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
127Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
128Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
129Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
130Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
131Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
132Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
133A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
134Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
135Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
136Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
137Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
138Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
139Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
140Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
141Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
142Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
143Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
144Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
145The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
146Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
147The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
148A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
149Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
150Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
151Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
152Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
153High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
154Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
155Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
156Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
157Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
158Ru thin film grown on TaN by plasma enhanced atomic layer deposition
159Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
160Trilayer Tunnel Selectors for Memristor Memory Cells
161Tribological properties of thin films made by atomic layer deposition sliding against silicon
162Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
163Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
164Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
165Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
166Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
167Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
168Atomic layer deposition of titanium nitride from TDMAT precursor
169Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
170Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
171Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
172Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
173Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
174Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
175Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
176Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
177In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
178Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
179NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
180Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
181Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
182Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
183Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
184Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
185Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
186Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
187Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
188Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
189Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
190Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
191Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
192TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
193TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
194Tribological properties of thin films made by atomic layer deposition sliding against silicon
195Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
196Analysis of nitrogen species in titanium oxynitride ALD films
197Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
198In-gap states in titanium dioxide and oxynitride atomic layer deposited films
199Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
200Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
201Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
202Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
203Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
204Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
205A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
206Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
207Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
208Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
209Plasma-enhanced atomic layer deposition of tungsten nitride
210Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
211WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
212Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
213Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
214Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
215Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics


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