NH3, Ammonia, CAS# 7664-41-7

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 278 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
2Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
3Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
4PEALD AlN: controlling growth and film crystallinity
5Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
6Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
7Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
8Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
9Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
10Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
11Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
12Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
13Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
14Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
15Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
16Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
17Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
18Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
19Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
20Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
21The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
22PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
23Plasma-enhanced ALD system for SRF cavity
24Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
25Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
26Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate
27Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
28Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
29Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
30Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
31Tribological properties of thin films made by atomic layer deposition sliding against silicon
32Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
33NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
34Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
35High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
36Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
37In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
38Protective capping and surface passivation of III-V nanowires by atomic layer deposition
39Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
40WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
41Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
42Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
43The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
44Texture of atomic layer deposited ruthenium
45Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
46Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
47Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
48Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
49Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
50Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
51Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
52Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
53Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
54Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
55Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
56Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
57Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
58Texture of atomic layer deposited ruthenium
59Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
60Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
61Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
62Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
63Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
64Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
65Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
66Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
67The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
68Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
69Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
70Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
71Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
72High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
73Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
74Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
75Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
76Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
77Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
78Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
79Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
80Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
81Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
82A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
83Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
84A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
85AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
86Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
87Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
88Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
89Challenges in spacer process development for leading-edge high-k metal gate technology
90A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
91Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
92A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
93Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
94Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
95Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
96Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
97Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
98The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
99Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
100Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
101Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
102A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
103Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
104Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
105Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
106Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
107Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
108Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
109A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
110Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
111Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
112Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
113Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
114Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
115Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
116Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
117Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
118Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
119Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
120Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
121TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
122Silicon surface passivation with atomic layer deposited aluminum nitride
123Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
124Atomic layer deposition of GaN at low temperatures
125Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
126Tribological properties of thin films made by atomic layer deposition sliding against silicon
127Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
128Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
129Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
130Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
131Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
132Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
133Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
134Plasma-Enhanced Atomic Layer Deposition of Ni
135Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
136Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
137Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
138Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
139Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
140Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
141Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
142823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
143Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
144Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
145P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
146Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
147Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
148Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
149Formation of Ni silicide from atomic layer deposited Ni
150Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
151High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
152Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
153Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
154Protective capping and surface passivation of III-V nanowires by atomic layer deposition
155Layer-by-layer epitaxial growth of GaN at low temperatures
156Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
157Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
158Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
159The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
160Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
161TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
162Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
163Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
164Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
165Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
166Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
167Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
168Crystalline growth of AlN thin films by atomic layer deposition
169Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
170Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
171Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
172Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
173Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
174P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
175Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
176Atomic layer deposition of titanium nitride from TDMAT precursor
177GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
178Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
179Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
180Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
181Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
182Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
183Trilayer Tunnel Selectors for Memristor Memory Cells
184Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
185Ru thin film grown on TaN by plasma enhanced atomic layer deposition
186Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
187Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
188TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
189In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
190Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
191Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
192Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
193Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
194Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor
195Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
196Properties of AlN grown by plasma enhanced atomic layer deposition
197Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
198Atomic layer deposition of InN using trimethylindium and ammonia plasma
199Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
200Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
201Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
202Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
203Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
204Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
205Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
206Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
207Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
208The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
209Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
210Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
211Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
212Tribological properties of thin films made by atomic layer deposition sliding against silicon
213Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
214Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
215Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
216Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
217Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
218Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
219The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
220Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
221A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
222Analysis of nitrogen species in titanium oxynitride ALD films
223Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
224Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
225Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
226Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
227Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
228In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
229The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
230Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
231Formation of aluminum nitride thin films as gate dielectrics on Si(100)
232Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition
233In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
234Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
235Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
236Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
237Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
238Ru thin film grown on TaN by plasma enhanced atomic layer deposition
239Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
240Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
241AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
242Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
243Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
244A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
245Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
246In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
247P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
248Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
249Self-Limiting Growth of GaN at Low Temperatures
250Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
251Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
252Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
253Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
254Plasma-enhanced atomic layer deposition of tungsten nitride
255Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
256Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
257In-gap states in titanium dioxide and oxynitride atomic layer deposited films
258Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
259Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
260Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
261Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
262Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
263Nitride passivation of the interface between high-k dielectrics and SiGe
264Protective capping and surface passivation of III-V nanowires by atomic layer deposition
265Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
266Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition