Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
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NH3, Ammonia, CAS# 7664-41-7

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 278 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
2High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
3A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
4Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
5Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
6Protective capping and surface passivation of III-V nanowires by atomic layer deposition
7The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
8Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
9Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
10Protective capping and surface passivation of III-V nanowires by atomic layer deposition
11Properties of AlN grown by plasma enhanced atomic layer deposition
12A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
13Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
14Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
15Protective capping and surface passivation of III-V nanowires by atomic layer deposition
16PEALD AlN: controlling growth and film crystallinity
17Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
18Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
19Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
20Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
21Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
22Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
23Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
24Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
25Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
26Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
27TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
28Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
29Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
30Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
31Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
32Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
33A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
34Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
35Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
36Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
37Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
38Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
39Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
40High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
41Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
42Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
43Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
44Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
45Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
46Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
47Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
48Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
49Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
50Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
51In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
52Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
53Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
54Layer-by-layer epitaxial growth of GaN at low temperatures
55Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
56The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
57Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
58Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
59Tribological properties of thin films made by atomic layer deposition sliding against silicon
60Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
61Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
62GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
63Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
64Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
65The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
66The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
67Trilayer Tunnel Selectors for Memristor Memory Cells
68Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
69Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
70Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
71Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
72Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
73Challenges in spacer process development for leading-edge high-k metal gate technology
74Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
75Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
76Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
77Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
78Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
79Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
80Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
81Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
82Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
83Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
84Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
85PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
86Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
87Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
88Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
89Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
90Silicon surface passivation with atomic layer deposited aluminum nitride
91Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
92Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
93Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
94Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
95Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
96Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
97Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
98Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
99Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
100Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
101Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
102WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
103Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
104Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
105Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
106Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
107Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
108Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
109Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
110Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
111Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
112Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
113Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate
114Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
115In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
116Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
117Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
118Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
119Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
120Plasma-enhanced ALD system for SRF cavity
121Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
122Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
123The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
124Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
125P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
126Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
127The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
128823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
129Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
130Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
131Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
132Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
133Ru thin film grown on TaN by plasma enhanced atomic layer deposition
134In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
135Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
136Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
137Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
138Plasma-Enhanced Atomic Layer Deposition of Ni
139P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
140Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
141Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
142High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
143Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
144Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
145Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
146Self-Limiting Growth of GaN at Low Temperatures
147Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
148Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
149Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
150Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
151Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
152TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
153Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
154Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
155Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
156Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
157Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
158Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
159Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
160Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
161Texture of atomic layer deposited ruthenium
162Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
163Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
164Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
165Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
166Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
167Formation of aluminum nitride thin films as gate dielectrics on Si(100)
168Tribological properties of thin films made by atomic layer deposition sliding against silicon
169In-gap states in titanium dioxide and oxynitride atomic layer deposited films
170Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
171Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
172Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
173Texture of atomic layer deposited ruthenium
174Analysis of nitrogen species in titanium oxynitride ALD films
175Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
176Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
177Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
178Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
179Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
180In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
181A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
182Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
183Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
184Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
185Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
186Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
187Atomic layer deposition of InN using trimethylindium and ammonia plasma
188Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
189Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor
190Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
191Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
192Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
193Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
194In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
195Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
196Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
197Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
198Atomic layer deposition of GaN at low temperatures
199Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
200Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
201Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
202Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
203Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
204AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
205Plasma-enhanced atomic layer deposition of tungsten nitride
206Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
207Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
208Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
209Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
210Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
211Crystalline growth of AlN thin films by atomic layer deposition
212Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition
213Tribological properties of thin films made by atomic layer deposition sliding against silicon
214Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
215Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
216P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
217Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
218Ru thin film grown on TaN by plasma enhanced atomic layer deposition
219The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
220Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
221Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
222Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
223Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
224Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
225A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
226Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
227Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
228Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
229Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
230Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
231Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
232Atomic layer deposition of titanium nitride from TDMAT precursor
233Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
234Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
235Formation of Ni silicide from atomic layer deposited Ni
236Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
237A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
238Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
239Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
240Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
241Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
242Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
243A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
244Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
245Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
246A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
247Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
248AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
249Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
250Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
251Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
252TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
253Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
254Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
255Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
256Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
257Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
258Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
259Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
260Nitride passivation of the interface between high-k dielectrics and SiGe
261Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
262The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
263Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
264NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
265Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
266Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt