NH3, Ammonia, CAS# 7664-41-7

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 278 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
2Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
3Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
4Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
5Protective capping and surface passivation of III-V nanowires by atomic layer deposition
6Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
7Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
8Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
9Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
10Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
11Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
12In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
13Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
14Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
15A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
16Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
17Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
18Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
19Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
20Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
21Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
22Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
23Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
24Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
25Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
26Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
27Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
28Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
29NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
30Ru thin film grown on TaN by plasma enhanced atomic layer deposition
31Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
32Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
33Properties of AlN grown by plasma enhanced atomic layer deposition
34Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
35Tribological properties of thin films made by atomic layer deposition sliding against silicon
36Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
37Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
38Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
39Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
40Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
41Self-Limiting Growth of GaN at Low Temperatures
42Challenges in spacer process development for leading-edge high-k metal gate technology
43Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
44Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
45Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
46Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
47Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
48Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
49The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
50Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
51Trilayer Tunnel Selectors for Memristor Memory Cells
52Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
53The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
54A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
55The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
56Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
57The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
58Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
59Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition
60Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
61A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
62In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
63Tribological properties of thin films made by atomic layer deposition sliding against silicon
64Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
65Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
66WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
67Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
68Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
69Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
70Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
71Silicon surface passivation with atomic layer deposited aluminum nitride
72Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
73Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
74In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
75Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
76Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
77Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
78Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
79Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
80Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
81Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
82Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
83Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
84Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
85Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
86Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
87Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
88Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
89Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
90Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
91Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
92Protective capping and surface passivation of III-V nanowires by atomic layer deposition
93The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
94The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
95The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
96Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
97Formation of aluminum nitride thin films as gate dielectrics on Si(100)
98Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
99Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
100Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
101Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
102Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
103A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
104Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
105Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
106Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
107Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
108Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
109High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
110Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
111A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
112Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
113Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
114Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
115Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
116Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
117Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
118Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
119Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
120Texture of atomic layer deposited ruthenium
121Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
122Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
123Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
124Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
125Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
126Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
127Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
128Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
129Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
130In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
131Nitride passivation of the interface between high-k dielectrics and SiGe
132Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
133GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
134AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
135Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
136Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
137Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
138High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
139Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
140Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
141Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
142Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
143Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
144Plasma-Enhanced Atomic Layer Deposition of Ni
145Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
146Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
147Ru thin film grown on TaN by plasma enhanced atomic layer deposition
148TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
149Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
150Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
151Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
152Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
153Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
154A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
155Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
156Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
157PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
158Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
159Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
160The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
161Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
162Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
163Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
164Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
165Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
166Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
167A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
168Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
169Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
170Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
171AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
172Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
173Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
174Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
175Protective capping and surface passivation of III-V nanowires by atomic layer deposition
176TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
177Texture of atomic layer deposited ruthenium
178Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
179823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
180Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
181Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
182Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate
183Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
184Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
185Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
186Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
187Atomic layer deposition of GaN at low temperatures
188PEALD AlN: controlling growth and film crystallinity
189Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
190Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
191Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
192Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
193In-gap states in titanium dioxide and oxynitride atomic layer deposited films
194Layer-by-layer epitaxial growth of GaN at low temperatures
195P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
196Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
197Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
198Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
199Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
200Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
201Atomic layer deposition of InN using trimethylindium and ammonia plasma
202Atomic layer deposition of titanium nitride from TDMAT precursor
203Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
204Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
205Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
206Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
207Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
208Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
209Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
210Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
211Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
212Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
213Plasma-enhanced atomic layer deposition of tungsten nitride
214Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
215P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
216Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
217Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
218Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
219Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
220TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
221Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
222High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
223Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
224Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
225Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
226Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
227Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
228Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
229A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
230Tribological properties of thin films made by atomic layer deposition sliding against silicon
231Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
232Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
233Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
234Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
235Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
236Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
237Crystalline growth of AlN thin films by atomic layer deposition
238Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
239Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
240Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
241Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
242Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
243Plasma-enhanced ALD system for SRF cavity
244Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
245Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
246Analysis of nitrogen species in titanium oxynitride ALD films
247Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
248Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
249Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
250Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
251Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
252Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
253Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
254Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
255Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
256Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor
257Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
258Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
259Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
260Formation of Ni silicide from atomic layer deposited Ni
261Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
262In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
263Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
264Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
265Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
266P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping