NH3, Ammonia, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
2Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
3Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
4Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
5The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
6Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
7P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
8High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
9Formation of aluminum nitride thin films as gate dielectrics on Si(100)
10Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
11Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
12Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
13Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
14Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
15Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
16The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
17Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
18A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
19Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
20Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
21Protective capping and surface passivation of III-V nanowires by atomic layer deposition
22Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
23Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate
24Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
25Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
26Tribological properties of thin films made by atomic layer deposition sliding against silicon
27Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
28Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
29Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
30In-gap states in titanium dioxide and oxynitride atomic layer deposited films
31Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
32High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
33Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
34Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
35Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
36Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
37GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
38Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
39Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
40Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
41Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
42Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
43Crystalline growth of AlN thin films by atomic layer deposition
44Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
45Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
46Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
47Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
48Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
49Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
50Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
51Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
52Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
53Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
54Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
55Analysis of nitrogen species in titanium oxynitride ALD films
56Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
57Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
58Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
59Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
60Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
61Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor
62Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
63A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
64Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
65Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
66Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
67Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
68Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
69Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
70Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
71In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
72A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
73Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
74Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
75Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
76TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
77Texture of atomic layer deposited ruthenium
78Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
79Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
80Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
81Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
82Layer-by-layer epitaxial growth of GaN at low temperatures
83Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
84Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
85Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
86The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
87Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
88Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
89The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
90Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
91Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
92Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
93Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
94Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
95Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
96Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
97Silicon surface passivation with atomic layer deposited aluminum nitride
98Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
99Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
100A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
101Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
102AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
103Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
104Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
105Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
106Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
107Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
108Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
109Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
110Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
111Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
112In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
113A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
114Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
115Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
116Plasma-enhanced ALD system for SRF cavity
117Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
118Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
119Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
120High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
121P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
122Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
123Nitride passivation of the interface between high-k dielectrics and SiGe
124Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
125Atomic layer deposition of InN using trimethylindium and ammonia plasma
126P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
127Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
128Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
129Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
130Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
131Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
132Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
133Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
134Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
135Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
136In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
137Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
138Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
139TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
140Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
141Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
142Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
143Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
144Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
145Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
146Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
147Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
148Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
149Tribological properties of thin films made by atomic layer deposition sliding against silicon
150Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
151In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
152Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
153Texture of atomic layer deposited ruthenium
154Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
155The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
156Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
157Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
158Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
159A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
160Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
161Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
162WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
163A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
164Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
165Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
166Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
167AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
168Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
169Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
170Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
171A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
172Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
173Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
174Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
175Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
176Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
177Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
178Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
179Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
180Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
181Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
182Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
183Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
184Plasma-Enhanced Atomic Layer Deposition of Ni
185Properties of AlN grown by plasma enhanced atomic layer deposition
186Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
187Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
188Protective capping and surface passivation of III-V nanowires by atomic layer deposition
189The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
190Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
191Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
192Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition
193Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
194Atomic layer deposition of titanium nitride from TDMAT precursor
195Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
196Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
197Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
198Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
199Trilayer Tunnel Selectors for Memristor Memory Cells
200Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
201Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
202Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
203Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
204The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
205Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
206Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
207Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
208Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
209Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
210Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
211Atomic layer deposition of GaN at low temperatures
212Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
213Formation of Ni silicide from atomic layer deposited Ni
214Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
215Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
216Protective capping and surface passivation of III-V nanowires by atomic layer deposition
217Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
218Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
219Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
220Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
221PEALD AlN: controlling growth and film crystallinity
222Challenges in spacer process development for leading-edge high-k metal gate technology
223Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
224Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
225Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
226Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
227Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
228TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
229Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
230Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
231In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
232Tribological properties of thin films made by atomic layer deposition sliding against silicon
233Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
234Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
235Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
236Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
237Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
238Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
239Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
240Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
241823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
242Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
243Ru thin film grown on TaN by plasma enhanced atomic layer deposition
244Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
245Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
246Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
247Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
248Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
249Plasma-enhanced atomic layer deposition of tungsten nitride
250PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
251Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
252The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
253NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
254Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
255Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
256Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
257Self-Limiting Growth of GaN at Low Temperatures
258Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
259Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
260Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
261Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
262Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
263Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
264Ru thin film grown on TaN by plasma enhanced atomic layer deposition
265Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition