NH3, Ammonia, CAS# 7664-41-7

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 278 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic layer deposition of titanium nitride from TDMAT precursor
2Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
3Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
4Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
5Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
6Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
7Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
8Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
9Plasma-enhanced atomic layer deposition of tungsten nitride
10Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
11Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
12Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
13Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
14Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
15Protective capping and surface passivation of III-V nanowires by atomic layer deposition
16A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
17Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
18Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
19Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
20Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
21In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
22Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
23Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
24Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
25Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
26Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
27WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
28Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
29Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
30Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
31Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
32Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
33Challenges in spacer process development for leading-edge high-k metal gate technology
34Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
35823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
36Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
37Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
38Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
39Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
40Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
41The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
42Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
43Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
44Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
45Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
46In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
47Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
48Ru thin film grown on TaN by plasma enhanced atomic layer deposition
49Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
50Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
51Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
52Crystalline growth of AlN thin films by atomic layer deposition
53A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
54Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
55AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
56Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition
57Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
58High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
59Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
60A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
61Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
62Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
63Properties of AlN grown by plasma enhanced atomic layer deposition
64TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
65Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
66Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
67Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
68Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
69Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
70High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
71Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
72Texture of atomic layer deposited ruthenium
73Tribological properties of thin films made by atomic layer deposition sliding against silicon
74Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
75Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
76The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
77P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
78Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
79Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
80Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
81Plasma-enhanced ALD system for SRF cavity
82Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
83Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
84Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
85Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
86Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
87Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
88Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
89Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
90Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
91Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
92Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
93Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
94PEALD AlN: controlling growth and film crystallinity
95PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
96Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
97Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
98Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
99Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
100Formation of Ni silicide from atomic layer deposited Ni
101Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
102Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
103Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
104Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
105Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
106The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
107Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
108Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
109Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
110High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
111Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
112Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
113Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
114Formation of aluminum nitride thin films as gate dielectrics on Si(100)
115Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
116Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
117AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
118Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
119Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
120Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
121Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
122Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
123Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
124Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
125Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
126Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
127A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
128P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
129Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
130Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
131Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
132Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
133Layer-by-layer epitaxial growth of GaN at low temperatures
134Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
135Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
136In-gap states in titanium dioxide and oxynitride atomic layer deposited films
137Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
138GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
139Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
140Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
141Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
142Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
143Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
144Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
145Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
146In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
147Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
148Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
149Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
150Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
151Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
152Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
153Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
154Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
155Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
156Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
157Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
158Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
159Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
160The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
161Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
162Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
163Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
164Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate
165Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
166Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
167Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
168The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
169Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
170Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
171Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
172Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
173Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
174Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
175Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
176Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
177Tribological properties of thin films made by atomic layer deposition sliding against silicon
178Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
179Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
180Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
181Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
182Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
183Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
184Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
185P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
186A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
187Ru thin film grown on TaN by plasma enhanced atomic layer deposition
188Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
189Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
190Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
191NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
192Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
193Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
194The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
195Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
196The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
197Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
198Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
199Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
200Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
201Nitride passivation of the interface between high-k dielectrics and SiGe
202Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
203Protective capping and surface passivation of III-V nanowires by atomic layer deposition
204Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
205Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
206Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
207Analysis of nitrogen species in titanium oxynitride ALD films
208Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
209Self-Limiting Growth of GaN at Low Temperatures
210Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
211A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
212Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
213Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
214Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor
215The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
216In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
217Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
218Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
219Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
220Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
221Trilayer Tunnel Selectors for Memristor Memory Cells
222Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
223Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
224Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
225Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
226Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
227Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
228Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
229Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
230Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
231Silicon surface passivation with atomic layer deposited aluminum nitride
232Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
233A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
234Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
235Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
236Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
237Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
238Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
239Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
240Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
241Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
242Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
243Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
244Texture of atomic layer deposited ruthenium
245Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
246TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
247Tribological properties of thin films made by atomic layer deposition sliding against silicon
248Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
249Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
250Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
251Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
252TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
253Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
254Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
255Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
256Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
257Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
258Protective capping and surface passivation of III-V nanowires by atomic layer deposition
259Atomic layer deposition of InN using trimethylindium and ammonia plasma
260Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
261Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
262Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
263Plasma-Enhanced Atomic Layer Deposition of Ni
264A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
265Atomic layer deposition of GaN at low temperatures
266In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment