| 1 | AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs |
| 2 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
| 3 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
| 4 | Nitride passivation of the interface between high-k dielectrics and SiGe |
| 5 | 823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric |
| 6 | A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs |
| 7 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |
| 8 | A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects |
| 9 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
| 10 | Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition |
| 11 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 12 | Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma |
| 13 | Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes |
| 14 | Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia |
| 15 | Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films |
| 16 | Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics |
| 17 | Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition |
| 18 | Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films |
| 19 | Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources |
| 20 | Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 21 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 22 | Crystalline growth of AlN thin films by atomic layer deposition |
| 23 | Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films |
| 24 | Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 25 | Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures |
| 26 | Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer |
| 27 | Formation of aluminum nitride thin films as gate dielectrics on Si(100) |
| 28 | GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride |
| 29 | Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer |
| 30 | Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition |
| 31 | High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning |
| 32 | Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack |
| 33 | Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric |
| 34 | Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition |
| 35 | Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films |
| 36 | Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 37 | Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition |
| 38 | Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications |
| 39 | PEALD AlN: controlling growth and film crystallinity |
| 40 | Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density |
| 41 | Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas |
| 42 | Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition |
| 43 | Properties of AlN grown by plasma enhanced atomic layer deposition |
| 44 | Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces |
| 45 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 46 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
| 47 | Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition |
| 48 | Silicon surface passivation with atomic layer deposited aluminum nitride |
| 49 | Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition |
| 50 | Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures |
| 51 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
| 52 | Surface passivation of GaAs nanowires by the atomic layer deposition of AlN |
| 53 | Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition |
| 54 | The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition |
| 55 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
| 56 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 57 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
| 58 | TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition |
| 59 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
| 60 | Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3 |
| 61 | Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell |
| 62 | Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition |
| 63 | Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant |
| 64 | Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor |
| 65 | Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt |
| 66 | Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant |
| 67 | High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 68 | Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation |
| 69 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor |
| 70 | Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor |
| 71 | Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition |
| 72 | Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction |
| 73 | Atomic layer deposition of GaN at low temperatures |
| 74 | Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions |
| 75 | Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3 |
| 76 | Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia |
| 77 | Layer-by-layer epitaxial growth of GaN at low temperatures |
| 78 | Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 79 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 80 | Self-Limiting Growth of GaN at Low Temperatures |
| 81 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
| 82 | Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source |
| 83 | Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs |
| 84 | Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition |
| 85 | A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films |
| 86 | Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor |
| 87 | Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas |
| 88 | Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers |
| 89 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
| 90 | Atomic layer deposition of InN using trimethylindium and ammonia plasma |
| 91 | The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films |
| 92 | Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate |
| 93 | Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process |
| 94 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 95 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
| 96 | Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing |
| 97 | Plasma-enhanced ALD system for SRF cavity |
| 98 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 99 | Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2 |
| 100 | Formation of Ni silicide from atomic layer deposited Ni |
| 101 | Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition |
| 102 | Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors |
| 103 | Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory |
| 104 | Plasma-Enhanced Atomic Layer Deposition of Ni |
| 105 | Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel |
| 106 | Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition |
| 107 | Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier |
| 108 | Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment |
| 109 | A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu |
| 110 | Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects |
| 111 | Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application |
| 112 | Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant |
| 113 | Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu |
| 114 | Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications |
| 115 | Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition |
| 116 | Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers |
| 117 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
| 118 | Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition |
| 119 | Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications |
| 120 | Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition |
| 121 | Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition |
| 122 | Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications |
| 123 | PEALD of a Ruthenium Adhesion Layer for Copper Interconnects |
| 124 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma |
| 125 | Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films |
| 126 | Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects |
| 127 | Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition |
| 128 | Ru thin film grown on TaN by plasma enhanced atomic layer deposition |
| 129 | Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications |
| 130 | The Properties of Cu Thin Films on Ru Depending on the ALD Temperature |
| 131 | The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2 |
| 132 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
| 133 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
| 134 | Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics |
| 135 | Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu |
| 136 | Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 137 | Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu |
| 138 | Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications |
| 139 | Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition |
| 140 | Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers |
| 141 | Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization |
| 142 | A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment |
| 143 | Atomic layer controlled deposition of silicon nitride with self-limiting mechanism |
| 144 | Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma |
| 145 | Atomic Layer Deposition of SiN for spacer applications in high-end logic devices |
| 146 | Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics |
| 147 | Challenges in spacer process development for leading-edge high-k metal gate technology |
| 148 | Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu |
| 149 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
| 150 | Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition |
| 151 | Evaluation of Stress Induced by Plasma Assisted ALD SiN Film |
| 152 | Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma |
| 153 | Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor |
| 154 | Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition |
| 155 | Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride |
| 156 | Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride |
| 157 | Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition |
| 158 | The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer |
| 159 | Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma |
| 160 | Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia |
| 161 | The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications |
| 162 | A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films |
| 163 | Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants |
| 164 | Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method |
| 165 | Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers |
| 166 | Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma |
| 167 | Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex |
| 168 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
| 169 | Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications |
| 170 | Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects |
| 171 | Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films |
| 172 | Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion |
| 173 | Ru thin film grown on TaN by plasma enhanced atomic layer deposition |
| 174 | Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition |
| 175 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
| 176 | Trilayer Tunnel Selectors for Memristor Memory Cells |
| 177 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 178 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 179 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 180 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 181 | Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases |
| 182 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 183 | Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors |
| 184 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
| 185 | Atomic layer deposition of titanium nitride from TDMAT precursor |
| 186 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
| 187 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
| 188 | Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing |
| 189 | Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si |
| 190 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
| 191 | Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks |
| 192 | Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition |
| 193 | Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System |
| 194 | In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential |
| 195 | Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes |
| 196 | NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors |
| 197 | Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride |
| 198 | Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT) |
| 199 | Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects |
| 200 | Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films |
| 201 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 202 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 203 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 204 | Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma |
| 205 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 206 | Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System |
| 207 | Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor |
| 208 | Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality |
| 209 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 210 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
| 211 | TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition |
| 212 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 213 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 214 | Analysis of nitrogen species in titanium oxynitride ALD films |
| 215 | Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition |
| 216 | In-gap states in titanium dioxide and oxynitride atomic layer deposited films |
| 217 | Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study |
| 218 | Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers |
| 219 | Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten |
| 220 | Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier |
| 221 | Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects |
| 222 | Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices |
| 223 | A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect |
| 224 | Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier |
| 225 | Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier |
| 226 | Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization |
| 227 | Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect |
| 228 | Plasma-enhanced atomic layer deposition of tungsten nitride |
| 229 | Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects |
| 230 | WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications |
| 231 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 232 | Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping |
| 233 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 234 | Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique |
| 235 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
| 236 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |