Ammonia, NH₃, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 190 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
2	Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
3	Nitride passivation of the interface between high-k dielectrics and SiGe
4	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
5	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
6	A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
7	A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
8	AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
9	Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
10	Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
11	Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
12	Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
13	Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
14	Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
15	Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
16	Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
17	Crystalline growth of AlN thin films by atomic layer deposition
18	Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
19	Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
20	Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
21	GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
22	Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
23	High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
24	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
25	Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
26	Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
27	Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
28	Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
29	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
30	Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
31	Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
32	Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
33	PEALD AlN: controlling growth and film crystallinity
34	Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
35	Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
36	Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
37	Properties of AlN grown by plasma enhanced atomic layer deposition
38	Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
39	Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
40	Silicon surface passivation with atomic layer deposited aluminum nitride
41	Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
42	Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
43	Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
44	Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
45	The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
46	The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
47	Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
48	Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
49	TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
50	Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
51	Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
52	Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
53	Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
54	Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
55	Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
56	Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
57	High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
58	Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
59	Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
60	Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
61	Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
62	Atomic layer deposition of GaN at low temperatures
63	Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
64	Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
65	Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
66	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
67	Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
68	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
69	Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
70	Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
71	Self-Limiting Growth of GaN at Low Temperatures
72	Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
73	Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
74	Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
75	Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
76	A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
77	Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
78	Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
79	Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
80	Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
81	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
82	Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
83	Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
84	Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
85	Plasma-enhanced ALD system for SRF cavity
86	Tribological properties of thin films made by atomic layer deposition sliding against silicon
87	Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
88	Formation of Ni silicide from atomic layer deposited Ni
89	Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
90	Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
91	Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
92	Plasma-Enhanced Atomic Layer Deposition of Ni
93	Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
94	Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
95	Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
96	A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
97	Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
98	Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
99	Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
100	Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
101	Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
102	Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
103	Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
104	Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
105	PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
106	Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
107	Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
108	Ru thin film grown on TaN by plasma enhanced atomic layer deposition
109	Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
110	The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
111	The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
112	Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
113	Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
114	Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
115	Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
116	Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
117	Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
118	Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
119	A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
120	Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
121	Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
122	Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
123	Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
124	Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
125	Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
126	Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
127	Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
128	Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
129	Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
130	Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
131	The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
132	Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
133	The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
134	A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
135	Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
136	Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
137	Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
138	Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
139	Ru thin film grown on TaN by plasma enhanced atomic layer deposition
140	Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
141	Trilayer Tunnel Selectors for Memristor Memory Cells
142	Tribological properties of thin films made by atomic layer deposition sliding against silicon
143	Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
144	Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
145	Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
146	Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
147	Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
148	Atomic layer deposition of titanium nitride from TDMAT precursor
149	Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
150	Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
151	Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
152	Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
153	Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
154	Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
155	Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
156	Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
157	NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
158	Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
159	Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
160	Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
161	Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
162	Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
163	Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
164	Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
165	Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
166	Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
167	TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
168	TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
169	Tribological properties of thin films made by atomic layer deposition sliding against silicon
170	Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
171	Analysis of nitrogen species in titanium oxynitride ALD films
172	Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
173	In-gap states in titanium dioxide and oxynitride atomic layer deposited films
174	Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
175	Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
176	Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
177	Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
178	Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
179	Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
180	A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
181	Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
182	Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
183	Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
184	Plasma-enhanced atomic layer deposition of tungsten nitride
185	Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
186	WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
187	Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
188	Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
189	Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
190	Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics

Shortcuts

© 2014-2018 plasma-ald.com