NH3, Ammonia, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
2Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
3Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
4Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
5Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
6Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
7Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
8Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
9Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
10Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
11A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
12Texture of atomic layer deposited ruthenium
13Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
14Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
15Protective capping and surface passivation of III-V nanowires by atomic layer deposition
16Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
17Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
18Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
19Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
20Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
21Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
22Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
23Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
24Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
25Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
26Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
27The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
28Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
29Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
30Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
31The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
32A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
33Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
34Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
35Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
36Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
37Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
38In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
39Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
40Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
41Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
42Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
43Challenges in spacer process development for leading-edge high-k metal gate technology
44Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
45Silicon surface passivation with atomic layer deposited aluminum nitride
46Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
47Formation of Ni silicide from atomic layer deposited Ni
48Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
49Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
50Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
51Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
52Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
53Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
54Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
55Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
56The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
57Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
58Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
59Protective capping and surface passivation of III-V nanowires by atomic layer deposition
60Tribological properties of thin films made by atomic layer deposition sliding against silicon
61Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
62Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
63Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
64Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
65Tribological properties of thin films made by atomic layer deposition sliding against silicon
66Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
67Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
68Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
69Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
70Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
71Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
72Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
73Crystalline growth of AlN thin films by atomic layer deposition
74Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
75Tribological properties of thin films made by atomic layer deposition sliding against silicon
76PEALD AlN: controlling growth and film crystallinity
77AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
78Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
79Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
80Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
81Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
82Plasma-enhanced atomic layer deposition of tungsten nitride
83Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
84Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
85Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
86Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
87Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
88Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
89Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
90Protective capping and surface passivation of III-V nanowires by atomic layer deposition
91Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
92Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
93Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
94Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
95Atomic layer deposition of titanium nitride from TDMAT precursor
96Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
97Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
98Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
99Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
100Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
101Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
102Plasma-enhanced ALD system for SRF cavity
103Ru thin film grown on TaN by plasma enhanced atomic layer deposition
104High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
105Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
106WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
107Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
108Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
109Properties of AlN grown by plasma enhanced atomic layer deposition
110TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
111Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
112Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
113Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
114Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
115Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
116Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
117Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
118Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
119Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
120Atomic layer deposition of InN using trimethylindium and ammonia plasma
121Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
122Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
123Ru thin film grown on TaN by plasma enhanced atomic layer deposition
124Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
125Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
126Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
127Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
128In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
129In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
130Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
131Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition
132Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate
133Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
134Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
135Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
136Formation of aluminum nitride thin films as gate dielectrics on Si(100)
137Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
138Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
139The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
140823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
141Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
142Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
143Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
144Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
145Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
146Analysis of nitrogen species in titanium oxynitride ALD films
147Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
148Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
149The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
150Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
151Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
152A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
153Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
154Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
155Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
156Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
157Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
158Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
159Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
160In-gap states in titanium dioxide and oxynitride atomic layer deposited films
161Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
162A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
163Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
164Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
165Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
166Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
167Plasma-Enhanced Atomic Layer Deposition of Ni
168GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
169Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
170Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
171Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
172Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
173Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
174Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
175Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
176Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
177Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
178Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
179Self-Limiting Growth of GaN at Low Temperatures
180Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
181Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
182Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
183Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
184Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
185Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
186Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
187Texture of atomic layer deposited ruthenium
188P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
189AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
190A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
191Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
192Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
193Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
194Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
195Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
196Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
197High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
198Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
199Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
200Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
201High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
202Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
203PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
204Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
205Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
206TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
207Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
208Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
209Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
210Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
211P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
212A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
213Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
214Atomic layer deposition of GaN at low temperatures
215Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
216Layer-by-layer epitaxial growth of GaN at low temperatures
217Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
218Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
219Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
220In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
221Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
222The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
223Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
224Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
225Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
226Trilayer Tunnel Selectors for Memristor Memory Cells
227Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
228A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
229Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor
230Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
231Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
232A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
233Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
234In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
235Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
236Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
237Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
238Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
239Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
240Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
241The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
242Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
243Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
244Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
245Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
246Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
247Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
248Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
249Nitride passivation of the interface between high-k dielectrics and SiGe
250Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
251P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
252Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
253Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
254Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
255Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
256Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
257Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
258Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
259Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
260Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
261NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
262Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
263Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
264Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
265TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition