NH3, Ammonia, CAS# 7664-41-7

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 278 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
2Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
3A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
4Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
5Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
6Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
7Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
8Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
9Texture of atomic layer deposited ruthenium
10Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
11Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
12Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
13Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
14WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
15In-gap states in titanium dioxide and oxynitride atomic layer deposited films
16Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
17Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
18Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
19Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
20Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
21The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
22A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
23Nitride passivation of the interface between high-k dielectrics and SiGe
24Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
25Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
26Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
27Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
28Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
29Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
30Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
31Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
32Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
33Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
34Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
35Protective capping and surface passivation of III-V nanowires by atomic layer deposition
36Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
37P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
38TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
39Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
40Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition
41In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
42Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
43Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
44Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
45Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
46Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
47Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
48Atomic layer deposition of GaN at low temperatures
49In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
50Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
51Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
52Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
53Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
54Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
55Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
56The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
57Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
58Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
59Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
60Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
61Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
62A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
63Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
64Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
65Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
66Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
67Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
68Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
69Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
70Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
71Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
72Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
73Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
74Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
75Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
76Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
77Silicon surface passivation with atomic layer deposited aluminum nitride
78Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
79Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
80Protective capping and surface passivation of III-V nanowires by atomic layer deposition
81Challenges in spacer process development for leading-edge high-k metal gate technology
82The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
83Protective capping and surface passivation of III-V nanowires by atomic layer deposition
84AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
85Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
86Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
87Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
88Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
89Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
90Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
91Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
92Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
93Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
94Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
95Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
96Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
97Ru thin film grown on TaN by plasma enhanced atomic layer deposition
98Texture of atomic layer deposited ruthenium
99Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
100Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
101Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
102Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
103Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
104Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
105A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
106In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
107Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
108High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
109Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
110Ru thin film grown on TaN by plasma enhanced atomic layer deposition
111Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
112Tribological properties of thin films made by atomic layer deposition sliding against silicon
113Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
114Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
115Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
116Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
117Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
118Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
119Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
120Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
121Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
122Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
123Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
124Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
125Formation of Ni silicide from atomic layer deposited Ni
126Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
127Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
128Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
129Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
130Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
131Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
132Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
133Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
134Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
135Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
136Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
137Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
138Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
139Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
140Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
141GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
142Atomic layer deposition of titanium nitride from TDMAT precursor
143Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
144Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
145Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
146Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
147Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
148Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
149P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
150A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
151Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
152Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
153Formation of aluminum nitride thin films as gate dielectrics on Si(100)
154Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
155Analysis of nitrogen species in titanium oxynitride ALD films
156Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
157NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
158Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
159Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
160Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
161High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
162Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
163Tribological properties of thin films made by atomic layer deposition sliding against silicon
164Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
165Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
166Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
167Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
168Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
169Plasma-enhanced atomic layer deposition of tungsten nitride
170Plasma-enhanced ALD system for SRF cavity
171The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
172Properties of AlN grown by plasma enhanced atomic layer deposition
173The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
174In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
175Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
176Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
177Plasma-Enhanced Atomic Layer Deposition of Ni
178Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
179Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
180A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
181Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
182Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
183Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
184The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
185In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
186PEALD AlN: controlling growth and film crystallinity
187Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
188Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
189Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
190Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
191Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
192Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
193Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor
194Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
195Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
196Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
197Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
198Self-Limiting Growth of GaN at Low Temperatures
199High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
200Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
201Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
202TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
203Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
204Trilayer Tunnel Selectors for Memristor Memory Cells
205Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
206Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
207Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
208Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
209Tribological properties of thin films made by atomic layer deposition sliding against silicon
210Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
211Layer-by-layer epitaxial growth of GaN at low temperatures
212The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
213Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
214TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
215Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
216Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
217Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
218Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
219Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
220Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
221Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
222Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
223Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
224Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
225Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
226Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
227823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
228PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
229Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate
230Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
231Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
232Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
233AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
234Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
235A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
236Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
237Atomic layer deposition of InN using trimethylindium and ammonia plasma
238Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
239Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
240Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
241The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
242Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
243Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
244Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
245Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
246Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
247Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
248Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
249Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
250Crystalline growth of AlN thin films by atomic layer deposition
251Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
252Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
253Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
254P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
255Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
256Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
257Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
258Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
259Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
260Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
261A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
262Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
263Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
264Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
265Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
266Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer