Ammonia, NH3, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 198 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
2Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
3Nitride passivation of the interface between high-k dielectrics and SiGe
4Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
5Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
6823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
7A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
8A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
9AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
10Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
11Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
12Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
13Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
14Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
15Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
16Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
17Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
18Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
19Crystalline growth of AlN thin films by atomic layer deposition
20Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
21Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
22Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
23GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
24Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
25High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
26Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
27Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
28Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
29Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
30Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
31Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
32Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
33Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
34Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
35PEALD AlN: controlling growth and film crystallinity
36Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
37Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
38Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
39Properties of AlN grown by plasma enhanced atomic layer deposition
40Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
41Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
42Silicon surface passivation with atomic layer deposited aluminum nitride
43Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
44Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
45Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
46Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
47The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
48The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
49Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
50Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
51TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
52Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
53Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
54Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
55Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
56Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
57Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
58Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
59High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
60Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
61Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
62Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
63Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
64Atomic layer deposition of GaN at low temperatures
65Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
66Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
67Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
68Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
69Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
70Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
71Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
72Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
73Self-Limiting Growth of GaN at Low Temperatures
74Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
75Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
76Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
77Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
78A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
79Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
80Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
81Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
82Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
83Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
84Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
85Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
86Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
87Plasma-enhanced ALD system for SRF cavity
88Tribological properties of thin films made by atomic layer deposition sliding against silicon
89Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
90Formation of Ni silicide from atomic layer deposited Ni
91Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
92Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
93Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
94Plasma-Enhanced Atomic Layer Deposition of Ni
95Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
96Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
97Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
98Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
99A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
100Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
101Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
102Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
103Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
104Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
105Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
106Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
107Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
108Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
109PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
110Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
111Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
112Ru thin film grown on TaN by plasma enhanced atomic layer deposition
113Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
114The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
115The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
116Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
117Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
118Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
119Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
120Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
121Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
122Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
123Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
124A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
125Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
126Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
127Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
128Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
129Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
130Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
131Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
132Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
133Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
134Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
135Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
136The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
137Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
138The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
139A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
140Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
141Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
142Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
143Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
144Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
145Ru thin film grown on TaN by plasma enhanced atomic layer deposition
146Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
147Trilayer Tunnel Selectors for Memristor Memory Cells
148Tribological properties of thin films made by atomic layer deposition sliding against silicon
149Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
150Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
151Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
152Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
153Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
154Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
155Atomic layer deposition of titanium nitride from TDMAT precursor
156Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
157Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
158Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
159Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
160Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
161Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
162Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
163Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
164NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
165Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
166Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
167Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
168Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
169Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
170Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
171Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
172Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
173Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
174Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
175TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
176TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
177Tribological properties of thin films made by atomic layer deposition sliding against silicon
178Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
179Analysis of nitrogen species in titanium oxynitride ALD films
180Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
181In-gap states in titanium dioxide and oxynitride atomic layer deposited films
182Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
183Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
184Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
185Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
186Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
187Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
188A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
189Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
190Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
191Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
192Plasma-enhanced atomic layer deposition of tungsten nitride
193Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
194WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
195Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
196Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
197Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
198Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics


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