Ammonia, NH₃, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 198 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
2	Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
3	Nitride passivation of the interface between high-k dielectrics and SiGe
4	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
5	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
6	823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
7	A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
8	A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
9	AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
10	Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
11	Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
12	Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
13	Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
14	Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
15	Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
16	Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
17	Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
18	Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
19	Crystalline growth of AlN thin films by atomic layer deposition
20	Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
21	Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
22	Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
23	GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
24	Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
25	High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
26	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
27	Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
28	Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
29	Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
30	Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
31	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
32	Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
33	Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
34	Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
35	PEALD AlN: controlling growth and film crystallinity
36	Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
37	Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
38	Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
39	Properties of AlN grown by plasma enhanced atomic layer deposition
40	Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
41	Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
42	Silicon surface passivation with atomic layer deposited aluminum nitride
43	Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
44	Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
45	Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
46	Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
47	The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
48	The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
49	Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
50	Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
51	TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
52	Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
53	Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
54	Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
55	Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
56	Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
57	Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
58	Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
59	High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
60	Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
61	Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
62	Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
63	Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
64	Atomic layer deposition of GaN at low temperatures
65	Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
66	Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
67	Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
68	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
69	Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
70	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
71	Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
72	Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
73	Self-Limiting Growth of GaN at Low Temperatures
74	Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
75	Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
76	Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
77	Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
78	A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
79	Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
80	Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
81	Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
82	Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
83	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
84	Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
85	Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
86	Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
87	Plasma-enhanced ALD system for SRF cavity
88	Tribological properties of thin films made by atomic layer deposition sliding against silicon
89	Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
90	Formation of Ni silicide from atomic layer deposited Ni
91	Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
92	Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
93	Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
94	Plasma-Enhanced Atomic Layer Deposition of Ni
95	Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
96	Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
97	Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
98	Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
99	A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
100	Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
101	Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
102	Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
103	Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
104	Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
105	Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
106	Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
107	Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
108	Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
109	PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
110	Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
111	Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
112	Ru thin film grown on TaN by plasma enhanced atomic layer deposition
113	Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
114	The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
115	The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
116	Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
117	Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
118	Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
119	Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
120	Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
121	Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
122	Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
123	Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
124	A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
125	Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
126	Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
127	Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
128	Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
129	Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
130	Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
131	Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
132	Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
133	Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
134	Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
135	Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
136	The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
137	Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
138	The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
139	A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
140	Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
141	Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
142	Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
143	Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
144	Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
145	Ru thin film grown on TaN by plasma enhanced atomic layer deposition
146	Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
147	Trilayer Tunnel Selectors for Memristor Memory Cells
148	Tribological properties of thin films made by atomic layer deposition sliding against silicon
149	Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
150	Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
151	Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
152	Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
153	Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
154	Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
155	Atomic layer deposition of titanium nitride from TDMAT precursor
156	Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
157	Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
158	Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
159	Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
160	Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
161	Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
162	Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
163	Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
164	NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
165	Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
166	Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
167	Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
168	Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
169	Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
170	Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
171	Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
172	Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
173	Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
174	Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
175	TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
176	TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
177	Tribological properties of thin films made by atomic layer deposition sliding against silicon
178	Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
179	Analysis of nitrogen species in titanium oxynitride ALD films
180	Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
181	In-gap states in titanium dioxide and oxynitride atomic layer deposited films
182	Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
183	Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
184	Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
185	Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
186	Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
187	Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
188	A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
189	Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
190	Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
191	Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
192	Plasma-enhanced atomic layer deposition of tungsten nitride
193	Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
194	WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
195	Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
196	Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
197	Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
198	Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics

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