NH3, Ammonia, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
2Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
3Plasma-enhanced atomic layer deposition of tungsten nitride
4A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
5Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
6Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
7Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
8Texture of atomic layer deposited ruthenium
9Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
10Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
11Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
12Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
13Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
14Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
15Protective capping and surface passivation of III-V nanowires by atomic layer deposition
16Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
17Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
18Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
19Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
20Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
21Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
22Plasma-Enhanced Atomic Layer Deposition of Ni
23Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
24Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
25Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
26Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
27Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
28Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
29Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
30Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
31Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
32Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
33Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
34Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
35Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
36Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
37Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
38Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
39Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
40The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
41In-gap states in titanium dioxide and oxynitride atomic layer deposited films
42Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
43Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
44Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
45Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
46TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
47Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
48TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
49A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
50Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
51Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
52P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
53Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
54Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
55Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
56Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
57Nitride passivation of the interface between high-k dielectrics and SiGe
58Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
59Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
60Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
61Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
62Ru thin film grown on TaN by plasma enhanced atomic layer deposition
63Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
64Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
65Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
66Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
67Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
68Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
69Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
70Properties of AlN grown by plasma enhanced atomic layer deposition
71Atomic layer deposition of titanium nitride from TDMAT precursor
72TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
73Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
74Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
75Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
76Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
77Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
78Layer-by-layer epitaxial growth of GaN at low temperatures
79Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
80Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
81Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
82In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
83Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
84Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
85P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
86Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
87Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
88Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
89Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
90Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
91A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
92Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
93Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
94Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
95Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
96Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
97Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
98Tribological properties of thin films made by atomic layer deposition sliding against silicon
99Self-Limiting Growth of GaN at Low Temperatures
100Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
101Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
102Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
103Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
104Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
105Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
106AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
107Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
108Tribological properties of thin films made by atomic layer deposition sliding against silicon
109Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
110Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
111Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
112Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
113Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
114Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
115Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
116Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
117Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
118Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
119Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
120Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
121Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
122Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
123Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
124Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
125Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
126Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
127Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
128Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
129Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
130Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
131Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
132Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
133In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
134Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
135WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
136Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
137Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
138Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
139Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
140Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
141Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
142Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
143Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
144Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
145Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
146The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
147Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
148Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
149Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
150High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
151Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
152Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
153Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
154NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
155Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
156Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
157Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
158Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
159Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
160The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
161Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
162Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
163Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
164Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
165Protective capping and surface passivation of III-V nanowires by atomic layer deposition
166Crystalline growth of AlN thin films by atomic layer deposition
167Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
168Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
169Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
170823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
171Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition
172Atomic layer deposition of GaN at low temperatures
173Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
174In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
175Protective capping and surface passivation of III-V nanowires by atomic layer deposition
176Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
177Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
178Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
179High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
180Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
181Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
182Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
183Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
184Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
185Formation of Ni silicide from atomic layer deposited Ni
186The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
187Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
188Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
189Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
190Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
191Plasma-enhanced ALD system for SRF cavity
192A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
193Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
194Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
195The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
196Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor
197The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
198Analysis of nitrogen species in titanium oxynitride ALD films
199Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
200Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
201Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
202Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
203Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
204Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
205In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
206Texture of atomic layer deposited ruthenium
207GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
208Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
209Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
210PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
211Atomic layer deposition of InN using trimethylindium and ammonia plasma
212Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
213Challenges in spacer process development for leading-edge high-k metal gate technology
214Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
215Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
216Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
217Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
218Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
219P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
220A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
221PEALD AlN: controlling growth and film crystallinity
222Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
223Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
224Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
225Silicon surface passivation with atomic layer deposited aluminum nitride
226Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
227Tribological properties of thin films made by atomic layer deposition sliding against silicon
228Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
229Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
230The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
231Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
232A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
233A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
234Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
235AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
236Ru thin film grown on TaN by plasma enhanced atomic layer deposition
237Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
238A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
239Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
240Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
241Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
242The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
243Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
244Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
245Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
246Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
247Formation of aluminum nitride thin films as gate dielectrics on Si(100)
248Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
249High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
250Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
251Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
252Trilayer Tunnel Selectors for Memristor Memory Cells
253Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
254In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
255Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
256Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
257Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
258Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
259Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
260Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
261Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
262Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications