NH3, Ammonia, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 213 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
2Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
3In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
4Nitride passivation of the interface between high-k dielectrics and SiGe
5Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
6Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
7823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
8A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
9A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
10AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
11Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
12Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
13Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
14Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
15Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
16Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
17Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
18Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
19Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
20Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
21Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
22Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
23Crystalline growth of AlN thin films by atomic layer deposition
24Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
25Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
26Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
27Formation of aluminum nitride thin films as gate dielectrics on Si(100)
28GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
29Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
30Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
31High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
32Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
33Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
34Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
35Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
36Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
37Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
38Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
39Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
40Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
41PEALD AlN: controlling growth and film crystallinity
42Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
43Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
44Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
45Properties of AlN grown by plasma enhanced atomic layer deposition
46Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
47Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
48Silicon surface passivation with atomic layer deposited aluminum nitride
49Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
50Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
51Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
52Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
53The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
54The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
55Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
56Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
57TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
58Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
59Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
60Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
61Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
62Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
63Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
64Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
65High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
66Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
67Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
68Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
69Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
70Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
71Atomic layer deposition of GaN at low temperatures
72Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
73Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
74Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
75Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
76Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
77Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
78Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
79Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
80Self-Limiting Growth of GaN at Low Temperatures
81Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
82Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
83Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
84Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
85A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
86Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
87Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
88Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
89Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
90Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
91Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
92Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
93Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
94Plasma-enhanced ALD system for SRF cavity
95Tribological properties of thin films made by atomic layer deposition sliding against silicon
96Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
97Formation of Ni silicide from atomic layer deposited Ni
98Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
99Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
100Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
101Plasma-Enhanced Atomic Layer Deposition of Ni
102Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
103Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
104Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
105Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
106A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
107Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
108Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
109Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
110Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
111Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
112Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
113Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
114Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
115Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
116PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
117Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
118Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
119Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
120Ru thin film grown on TaN by plasma enhanced atomic layer deposition
121Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
122The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
123The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
124Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
125Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
126Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
127Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
128Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
129Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
130Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
131Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
132A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
133Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
134Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
135Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
136Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
137Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
138Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
139Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
140Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
141Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
142Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
143Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
144The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
145Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
146The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
147A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
148Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
149Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
150Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
151High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
152Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
153Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
154Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
155Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
156Ru thin film grown on TaN by plasma enhanced atomic layer deposition
157Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
158Trilayer Tunnel Selectors for Memristor Memory Cells
159Tribological properties of thin films made by atomic layer deposition sliding against silicon
160Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
161Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
162Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
163Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
164Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
165Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
166Atomic layer deposition of titanium nitride from TDMAT precursor
167Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
168Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
169Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
170Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
171Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
172Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
173Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
174Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
175In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
176Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
177NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
178Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
179Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
180Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
181Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
182Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
183Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
184Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
185Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
186Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
187Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
188Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
189Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
190TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
191TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
192Tribological properties of thin films made by atomic layer deposition sliding against silicon
193Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
194Analysis of nitrogen species in titanium oxynitride ALD films
195Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
196In-gap states in titanium dioxide and oxynitride atomic layer deposited films
197Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
198Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
199Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
200Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
201Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
202Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
203A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
204Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
205Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
206Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
207Plasma-enhanced atomic layer deposition of tungsten nitride
208Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
209WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
210Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
211Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
212Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
213Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics


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