Ammonia, NH₃, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 177 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
2	Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
3	Nitride passivation of the interface between high-k dielectrics and SiGe
4	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
5	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
6	A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
7	A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
8	AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
9	Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
10	Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
11	Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
12	Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
13	Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
14	Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
15	Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
16	Crystalline growth of AlN thin films by atomic layer deposition
17	Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
18	Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
19	Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
20	GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
21	Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
22	High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
23	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
24	Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
25	Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
26	Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
27	Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
28	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
29	Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
30	Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
31	Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
32	PEALD AlN: controlling growth and film crystallinity
33	Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
34	Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
35	Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
36	Properties of AlN grown by plasma enhanced atomic layer deposition
37	Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
38	Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
39	Silicon surface passivation with atomic layer deposited aluminum nitride
40	Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
41	Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
42	Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
43	Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
44	The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
45	The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
46	Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
47	TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
48	Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
49	Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
50	Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
51	Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
52	Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
53	Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
54	Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
55	High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
56	Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
57	Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
58	Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
59	Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
60	Atomic layer deposition of GaN at low temperatures
61	Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
62	Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
63	Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
64	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
65	Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
66	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
67	Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
68	Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
69	Self-Limiting Growth of GaN at Low Temperatures
70	Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
71	Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
72	Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
73	Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
74	A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
75	Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
76	Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
77	Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
78	Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
79	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
80	Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
81	Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
82	Plasma-enhanced ALD system for SRF cavity
83	Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
84	Formation of Ni silicide from atomic layer deposited Ni
85	Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
86	Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
87	Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
88	Plasma-Enhanced Atomic Layer Deposition of Ni
89	Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
90	Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
91	Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
92	Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
93	Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
94	Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
95	Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
96	Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
97	Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
98	Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
99	Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
100	PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
101	Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
102	Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
103	Ru thin film grown on TaN by plasma enhanced atomic layer deposition
104	Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
105	The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
106	The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
107	Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
108	Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
109	Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
110	Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
111	Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
112	Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
113	Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
114	Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
115	Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
116	Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
117	Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
118	Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
119	Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
120	Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
121	Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
122	Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
123	Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
124	Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
125	The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
126	Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
127	The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
128	Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
129	Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
130	Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
131	Ru thin film grown on TaN by plasma enhanced atomic layer deposition
132	Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
133	Trilayer Tunnel Selectors for Memristor Memory Cells
134	Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
135	Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
136	Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
137	Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
138	Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
139	Atomic layer deposition of titanium nitride from TDMAT precursor
140	Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
141	Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
142	Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
143	Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
144	Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
145	Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
146	Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
147	Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
148	NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
149	Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
150	Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
151	Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
152	Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
153	Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
154	Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
155	Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
156	Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
157	TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
158	TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
159	Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
160	Analysis of nitrogen species in titanium oxynitride ALD films
161	Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
162	Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
163	Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
164	Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
165	Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
166	Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
167	Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
168	A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
169	Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
170	Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
171	Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
172	Plasma-enhanced atomic layer deposition of tungsten nitride
173	Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
174	Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
175	Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
176	Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
177	Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics

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