NH3, Ammonia, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
2Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
3A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
4Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
5In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
6Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
7Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
8Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
9Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
10A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
11Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
12Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
13Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
14Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
15Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
16Crystalline growth of AlN thin films by atomic layer deposition
17Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
18Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
19Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
20Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
21Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
22Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
23Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
24Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
25Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
26Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
27PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
28TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
29Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
30Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
31Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
32A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
33The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
34Ru thin film grown on TaN by plasma enhanced atomic layer deposition
35Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
36Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
37Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
38The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
39Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
40Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
41Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
42Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
43Silicon surface passivation with atomic layer deposited aluminum nitride
44Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
45Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
46P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
47Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
48Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
49Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
50Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
51Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
52Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
53Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
54Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
55Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
56Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
57Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
58In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
59Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
60Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
61Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
62Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
63The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
64Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
65Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
66Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
67Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
68The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
69Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
70Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
71Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
72Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
73Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
74Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
75Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
76Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
77Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
78Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
79Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
80Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
81Atomic layer deposition of InN using trimethylindium and ammonia plasma
82Tribological properties of thin films made by atomic layer deposition sliding against silicon
83Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
84WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
85Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
86Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
87Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
88Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
89Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
90Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
91Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
92Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
93Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
94Protective capping and surface passivation of III-V nanowires by atomic layer deposition
95Properties of AlN grown by plasma enhanced atomic layer deposition
96In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
97High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
98Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
99AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
100Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
101Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
102Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
103Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
104P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
105Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
106Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
107Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
108A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
109Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
110Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
111Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
112A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
113High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
114AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
115Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
116Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
117In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
118Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
119Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
120Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
121Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
122Atomic layer deposition of GaN at low temperatures
123Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
124Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
125Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
126Challenges in spacer process development for leading-edge high-k metal gate technology
127Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
128Tribological properties of thin films made by atomic layer deposition sliding against silicon
129Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
130The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
131Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
132Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
133Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
134Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
135Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
136Plasma-Enhanced Atomic Layer Deposition of Ni
137Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
138Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
139Trilayer Tunnel Selectors for Memristor Memory Cells
140Formation of aluminum nitride thin films as gate dielectrics on Si(100)
141Formation of Ni silicide from atomic layer deposited Ni
142Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
143Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
144Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
145Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
146Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
147A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
148Atomic layer deposition of titanium nitride from TDMAT precursor
149Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
150In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
151Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
152Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
153Analysis of nitrogen species in titanium oxynitride ALD films
154Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
155Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
156Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
157Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
158A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
159Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
160Tribological properties of thin films made by atomic layer deposition sliding against silicon
161Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
162High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
163Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
164TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
165Plasma-enhanced ALD system for SRF cavity
166Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
167Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
168Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
169Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
170Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
171Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
172Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
173Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
174Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
175Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
176Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
177Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
178Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
179Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
180Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
181Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
182PEALD AlN: controlling growth and film crystallinity
183Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
184A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
185The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
186Nitride passivation of the interface between high-k dielectrics and SiGe
187Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
188Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
189Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
190Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
191Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
192823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
193Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
194Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
195In-gap states in titanium dioxide and oxynitride atomic layer deposited films
196Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
197Protective capping and surface passivation of III-V nanowires by atomic layer deposition
198Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
199Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
200Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
201Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
202NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
203Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
204Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
205Texture of atomic layer deposited ruthenium
206Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
207The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
208Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
209Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
210Self-Limiting Growth of GaN at Low Temperatures
211Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
212Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
213Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
214Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
215Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
216Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
217Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
218Protective capping and surface passivation of III-V nanowires by atomic layer deposition
219Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor
220Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
221Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
222Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
223Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
224Plasma-enhanced atomic layer deposition of tungsten nitride
225Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
226Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
227GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
228Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
229Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
230Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
231Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
232Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
233Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
234Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
235Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
236Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
237Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
238Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
239Texture of atomic layer deposited ruthenium
240Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
241Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
242Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
243Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
244Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
245Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
246TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
247Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
248The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
249Layer-by-layer epitaxial growth of GaN at low temperatures
250Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
251P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
252Ru thin film grown on TaN by plasma enhanced atomic layer deposition
253Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
254Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
255Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
256Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
257Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
258Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition