NH3, Ammonia, CAS# 7664-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
2Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
3In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
4Nitride passivation of the interface between high-k dielectrics and SiGe
5823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
6A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
7A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
8A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
9AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
10Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
11Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
12Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
13Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
14Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
15Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
16Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
17Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
18Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
19Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
20Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
21Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
22Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
23Crystalline growth of AlN thin films by atomic layer deposition
24Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
25Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
26Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
27Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
28Formation of aluminum nitride thin films as gate dielectrics on Si(100)
29GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
30Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
31Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
32High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
33Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
34Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
35Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
36Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
37Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
38Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
39Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
40PEALD AlN: controlling growth and film crystallinity
41Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
42Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
43Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
44Properties of AlN grown by plasma enhanced atomic layer deposition
45Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
46Protective capping and surface passivation of III-V nanowires by atomic layer deposition
47Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
48Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
49Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
50Silicon surface passivation with atomic layer deposited aluminum nitride
51Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
52Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
53Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
54Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
55Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
56The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
57The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
58Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
59Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
60TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
61Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
62Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
63Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
64Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
65Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
66Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
67Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
68Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
69Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
70High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
71Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
72Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor
73Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
74Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
75Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
76Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
77In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
78Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
79Atomic layer deposition of GaN at low temperatures
80Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
81Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
82Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
83Layer-by-layer epitaxial growth of GaN at low temperatures
84Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
85Protective capping and surface passivation of III-V nanowires by atomic layer deposition
86Self-Limiting Growth of GaN at Low Temperatures
87Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
88Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
89Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
90Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
91A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
92Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
93Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
94Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
95Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
96Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
97Atomic layer deposition of InN using trimethylindium and ammonia plasma
98Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
99In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
100The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
101Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
102Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
103P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
104Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
105Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
106Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
107Plasma-enhanced ALD system for SRF cavity
108Tribological properties of thin films made by atomic layer deposition sliding against silicon
109Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
110Formation of Ni silicide from atomic layer deposited Ni
111Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
112Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
113Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
114Plasma-Enhanced Atomic Layer Deposition of Ni
115Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
116Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
117Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
118Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
119A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
120Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
121Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
122Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
123Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
124Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
125Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
126Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
127Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
128Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
129Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
130Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
131Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
132Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
133PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
134Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
135Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
136Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
137Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
138Ru thin film grown on TaN by plasma enhanced atomic layer deposition
139Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
140The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
141The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
142Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
143Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
144Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
145Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
146Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
147Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
148Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
149Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
150Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
151Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
152A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
153Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
154Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
155Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
156Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
157Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
158Challenges in spacer process development for leading-edge high-k metal gate technology
159Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
160Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
161Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
162Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
163Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
164Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
165Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
166Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
167Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
168Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
169The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
170Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
171Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
172The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
173A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
174Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
175Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
176Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
177Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
178Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
179High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
180Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
181Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
182Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
183Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
184Ru thin film grown on TaN by plasma enhanced atomic layer deposition
185Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
186Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
187Trilayer Tunnel Selectors for Memristor Memory Cells
188Tribological properties of thin films made by atomic layer deposition sliding against silicon
189Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
190Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
191Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
192Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
193Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
194Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
195Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
196Atomic layer deposition of titanium nitride from TDMAT precursor
197Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
198Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
199Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
200Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
201Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
202Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
203Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
204Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
205Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
206In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
207Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
208NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
209Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
210Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
211Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
212Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
213Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
214Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
215Protective capping and surface passivation of III-V nanowires by atomic layer deposition
216Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
217Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
218Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
219Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
220Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
221Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
222Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
223Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
224Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
225Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
226TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
227TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
228Tribological properties of thin films made by atomic layer deposition sliding against silicon
229Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
230Analysis of nitrogen species in titanium oxynitride ALD films
231Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
232In-gap states in titanium dioxide and oxynitride atomic layer deposited films
233Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
234Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
235Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
236Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
237Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
238Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
239A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
240Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
241Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
242Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
243Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
244Plasma-enhanced atomic layer deposition of tungsten nitride
245Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
246WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
247P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
248Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
249P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
250Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
251Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
252Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
253In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics