NH3, Ammonia, CAS# 7664-41-7

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 278 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
2Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
3Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
4Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
5Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
6Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
7Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
8Texture of atomic layer deposited ruthenium
9Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
10Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
11Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
12Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
13Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
14Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
15Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
16A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
17823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
18Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
19Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
20Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
21Protective capping and surface passivation of III-V nanowires by atomic layer deposition
22Tribological properties of thin films made by atomic layer deposition sliding against silicon
23Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
24Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
25Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
26Challenges in spacer process development for leading-edge high-k metal gate technology
27In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
28Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
29Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
30Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
31Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
32Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
33Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
34In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
35Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
36Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
37Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
38Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
39Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
40Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
41Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
42Atomic layer deposition of InN using trimethylindium and ammonia plasma
43Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
44P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
45Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
46Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
47Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
48Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
49Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
50Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
51Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
52Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
53AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
54Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
55Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
56Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
57Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
58Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
59Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
60A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
61In-gap states in titanium dioxide and oxynitride atomic layer deposited films
62Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
63Plasma-enhanced atomic layer deposition of tungsten nitride
64Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
65Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
66Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
67Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
68Atomic layer deposition of titanium nitride from TDMAT precursor
69Protective capping and surface passivation of III-V nanowires by atomic layer deposition
70Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
71High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
72Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
73Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
74Formation of Ni silicide from atomic layer deposited Ni
75Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
76Atomic layer deposition of GaN at low temperatures
77A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
78Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
79Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
80Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
81Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
82Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
83Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
84Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
85Tribological properties of thin films made by atomic layer deposition sliding against silicon
86Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
87Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
88Ru thin film grown on TaN by plasma enhanced atomic layer deposition
89Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
90Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
91Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
92GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
93Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
94Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
95Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
96TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
97Ru thin film grown on TaN by plasma enhanced atomic layer deposition
98Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
99Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
100Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
101Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
102Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
103Tribological properties of thin films made by atomic layer deposition sliding against silicon
104Nitride passivation of the interface between high-k dielectrics and SiGe
105Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
106Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
107Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
108Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
109Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
110Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
111Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
112Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
113Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
114Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
115Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
116High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
117Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
118High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
119Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
120Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
121Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
122Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
123The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
124Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
125Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
126Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
127Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
128Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate
129The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
130Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
131Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
132Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
133Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
134Plasma-enhanced ALD system for SRF cavity
135Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
136Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
137Silicon surface passivation with atomic layer deposited aluminum nitride
138Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
139Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
140Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
141A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
142Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
143Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
144The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
145Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
146Crystalline growth of AlN thin films by atomic layer deposition
147The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
148Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
149The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
150Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
151Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
152Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
153Trilayer Tunnel Selectors for Memristor Memory Cells
154Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor
155In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
156Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
157Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
158Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
159Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
160Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
161Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
162Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
163Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
164Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
165Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
166Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
167Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
168Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
169Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
170Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
171In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
172Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
173Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
174Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
175Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
176Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
177Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
178Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
179Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
180Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
181Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
182Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
183Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
184The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
185Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
186Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
187Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
188Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
189Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
190Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
191Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
192Self-Limiting Growth of GaN at Low Temperatures
193Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
194WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
195TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
196Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
197Analysis of nitrogen species in titanium oxynitride ALD films
198Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
199Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
200Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
201TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
202Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
203Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
204Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
205NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
206A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
207Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
208Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
209In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
210Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
211Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
212Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
213PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
214Plasma-Enhanced Atomic Layer Deposition of Ni
215Properties of AlN grown by plasma enhanced atomic layer deposition
216Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
217Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
218Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
219Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
220Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
221Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
222Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
223Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
224Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
225Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
226Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
227Layer-by-layer epitaxial growth of GaN at low temperatures
228P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
229Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
230PEALD AlN: controlling growth and film crystallinity
231Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
232Protective capping and surface passivation of III-V nanowires by atomic layer deposition
233A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
234Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
235A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
236A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
237The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
238AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
239Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
240Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
241Formation of aluminum nitride thin films as gate dielectrics on Si(100)
242Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
243Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
244Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
245Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
246Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
247Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
248Texture of atomic layer deposited ruthenium
249Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
250Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
251Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
252Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
253Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
254Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
255P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
256Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
257Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
258Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
259Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
260Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
261Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
262Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
263The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
264Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition
265Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
266Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition