NH3, Ammonia, CAS# 7664-41-7

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 278 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
2Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
3Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si
4Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
5Texture of atomic layer deposited ruthenium
6Self-Limiting Growth of GaN at Low Temperatures
7Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
8Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
9Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
10Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
11Tribological properties of thin films made by atomic layer deposition sliding against silicon
12Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
13Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
14A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
15Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
16Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
17Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
18Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
19Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
20Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
21Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
22Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
23Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
24TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
25Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
26Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
27WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications
28Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
29Challenges in spacer process development for leading-edge high-k metal gate technology
30Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
31Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
32Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition
33Initial Stages of Ruthenium Film Growth in Plasma-Enhanced Atomic Layer Deposition
34Protective capping and surface passivation of III-V nanowires by atomic layer deposition
35Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
36Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
37The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
38Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
39Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
40Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
41Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
42Plasma-Enhanced Atomic Layer Deposition of Ruthenium Thin Films
43Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
44Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
45Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
46Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
47Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
48Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
49Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
50Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
51Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
52Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
53Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier
54Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
55Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma
56Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
57Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
58Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity
59Plasma-enhanced atomic layer deposition of nickel thin film using bis(1,4-diisopropyl-1,4-diazabutadiene)nickel
60Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
61High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
62PEALD AlN: controlling growth and film crystallinity
63Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
64Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
65823-mA/mm Drain Current Density and 945-MW/cm2 Baliga's Figure-of-Merit Enhancement-Mode GaN MISFETs With a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric
66Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
67Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
68TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
69Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
70Protective capping and surface passivation of III-V nanowires by atomic layer deposition
71Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
72Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition
73Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
74Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
75Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
76Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
77Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
78Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
79Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
80Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
81Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
82Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
83NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors
84Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System
85Atomic Layer Deposition of AlN Thin Films in Three Different Growth Regimes
86Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
87Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors
88Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
89Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
90Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
91The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
92Ru thin film grown on TaN by plasma enhanced atomic layer deposition
93Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
94Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
95Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
96Crystalline growth of AlN thin films by atomic layer deposition
97Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
98Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
99High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
100Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
101Properties of AlN grown by plasma enhanced atomic layer deposition
102Plasma-enhanced ALD system for SRF cavity
103Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
104Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride
105Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
106Blistering mechanisms of atomic-layer-deposited AlN and Al2O3 films
107The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
108Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
109Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
110Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
111Plasma-Enhanced Atomic Layer Deposition of Ni
112Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
113In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential
114Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
115Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
116Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
117Formation of Nano-Crystalline Ru-Based Ternary Thin Films by Plasma-Enhanced Atomic Layer Deposition
118Nitride passivation of the interface between high-k dielectrics and SiGe
119GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
120AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
121Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films
122A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
123Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
124Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
125Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor
126Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
127Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
128Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
129PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
130Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
131Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
132Analysis of nitrogen species in titanium oxynitride ALD films
133Carbon nanotube-supported Cu3N nanocrystals as a highly active catalyst for oxygen reduction reaction
134Ru thin film grown on TaN by plasma enhanced atomic layer deposition
135Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition
136The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
137Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
138In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
139Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
140Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
141Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
142Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
143Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
144Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
145Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
146Plasma-enhanced Atomic Layer Deposition of TaN Film and Its Resistance to Copper Diffusion
147Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
148Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
149Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
150In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
151The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
152Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
153Atomic layer deposition of GaN at low temperatures
154A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
155A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
156Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
157Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
158Reaction Mechanism of the Metal Precursor Pulse in Plasma-Enhanced Atomic Layer Deposition of Cobalt and the Role of Surface Facets
159Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
160Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
161Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
162Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
163Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
164Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer
165Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
166A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
167Improved Interface and Transport Properties of AlGaN/GaN MIS-HEMTs With PEALD-Grown AlN Gate Dielectric
168Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality
169Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
170Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
171A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
172Reactions of ruthenium cyclopentadienyl precursor in the metal precursor pulse of Ru atomic layer deposition
173Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
174Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
175Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
176In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
177Plasma enhanced atomic layer deposition of cobalt nitride with cobalt amidinate
178Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
179Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
180AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
181Atomic Layer Deposition of Ru Nanocrystals with a Tunable Density and Size for Charge Storage Memory Device Application
182Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
183Formation of Ni silicide from atomic layer deposited Ni
184Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
185Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
186Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
187Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
188Formation of aluminum nitride thin films as gate dielectrics on Si(100)
189Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
190Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
191Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
192Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
193The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
194Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
195Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
196Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
197Atomic Layer Deposition of Aluminum Nitride Thin films from Trimethyl Aluminum (TMA) and Ammonia
198Tribological properties of thin films made by atomic layer deposition sliding against silicon
199Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
200Protective capping and surface passivation of III-V nanowires by atomic layer deposition
201P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
202Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
203Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
204Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
205Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
206Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
207Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
208TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
209Plasma-enhanced atomic layer deposition of tungsten nitride
210P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
211Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
212Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
213The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films
214Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
215Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
216Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
217Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
218Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
219Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
220High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
221Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
222Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
223Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
224Comparative study of thermal and radical-enhanced methods for growing boron nitride films from diborane and ammonia
225Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
226Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
227Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
228Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
229Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
230Tribological properties of thin films made by atomic layer deposition sliding against silicon
231Texture of atomic layer deposited ruthenium
232Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
233Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
234Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources
235Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
236Atomic layer deposition of InN using trimethylindium and ammonia plasma
237Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
238Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications
239Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
240The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
241Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
242Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
243Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
244Layer-by-layer epitaxial growth of GaN at low temperatures
245Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
246Atomic layer deposition of titanium nitride from TDMAT precursor
247Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
248Silicon surface passivation with atomic layer deposited aluminum nitride
249Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
250In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
251Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
252Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
253Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
254Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
255In-gap states in titanium dioxide and oxynitride atomic layer deposited films
256A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
257A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
258Trilayer Tunnel Selectors for Memristor Memory Cells
259Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
260P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
261Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
262Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
263Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
264Resolving Impurities in Atomic Layer Deposited Aluminum Nitride through Low Cost, High Efficiency Precursor Design
265Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
266Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes