Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Solid-State Electronics 133 (2017) 10-16
Date:
2017-04-17
DOI:
https://doi.org/10.1016/j.sse.2017.04.005

Author Information

Name Institution
Pei-Ci JhangMacronix International Co. Ltd.
Chi-Pin LuMacronix International Co. Ltd.
Jung-Yu ShiehMacronix International Co. Ltd.
Ling-Wu YangMacronix International Co. Ltd.
Tahone YangMacronix International Co. Ltd.
Kuang-Chao ChenMacronix International Co. Ltd.
Chih-Yuan LuMacronix International Co. Ltd.

Films

Plasma SiNx

Hardware used: Custom Batch
DCS, H2SiCl2, DiChloroSilane
CAS#: 4109-96-0
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 400-630C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: KLA-Tencor F5

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: KLA-Tencor F5

Characteristic: Stress
Analysis: -
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Characteristic: Wet Etch Resistance
Analysis: -
Diagnostic: -

Substrates

Si(001)

Notes

1734