| 1 | A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment |
| 2 | AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate |
| 3 | Anisotropic Inter-Poly Dielectric technology for conventional floating gate type flash memory |
| 4 | Atomic layer controlled deposition of silicon nitride with self-limiting mechanism |
| 5 | Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma |
| 6 | Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy |
| 7 | Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies |
| 8 | Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics |
| 9 | CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm |
| 10 | Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer |
| 11 | Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates |
| 12 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
| 13 | Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
| 14 | Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition |
| 15 | Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride |
| 16 | High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure |
| 17 | Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs |
| 18 | Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs |
| 19 | Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers |
| 20 | Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma |
| 21 | Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers |
| 22 | Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor |
| 23 | Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition |
| 24 | Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition |
| 25 | Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas |
| 26 | Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate |
| 27 | Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane |
| 28 | Plasma enhanced atomic layer deposition of SiNx:H and SiO2 |
| 29 | Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor |
| 30 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 31 | Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride |
| 32 | Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time |
| 33 | Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena |
| 34 | Reliability and parasitic issues in GaN-based power HEMTs: a review |
| 35 | Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride |
| 36 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
| 37 | SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition |
| 38 | Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition |
| 39 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
| 40 | Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition |
| 41 | The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer |
| 42 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
| 43 | Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests |
| 44 | Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs |
| 45 | Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate |
| 46 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 47 | Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode |