SiNx Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing SiNx films returned 47 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
2AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate
3Anisotropic Inter-Poly Dielectric technology for conventional floating gate type flash memory
4Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
5Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
6Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
7Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
8Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
9CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
10Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer
11Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates
12Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
13Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
14Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
15Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
16High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure
17Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
18Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs
19Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
20Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
21Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
22Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
23Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
24Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
25Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas
26Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate
27Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
28Plasma enhanced atomic layer deposition of SiNx:H and SiO2
29Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
30Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
31Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
32Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
33Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
34Reliability and parasitic issues in GaN-based power HEMTs: a review
35Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
36Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
37SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
38Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
39Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
40Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
41The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
42Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
43Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
44Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
45Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
46Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
47Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode


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