SiNx Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing SiNx films returned 63 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
2AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate
3Anisotropic Inter-Poly Dielectric technology for conventional floating gate type flash memory
4Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
5Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
6Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
7Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
8Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
9Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
10Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
11Challenges in spacer process development for leading-edge high-k metal gate technology
12Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
13CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
14Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer
15Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates
16Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
17Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
18Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
19Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
20Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
21Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
22Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
23Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
24High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure
25High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
26Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
27Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs
28Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
29Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
30Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
31Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
32Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
33Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
34Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
35Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas
36Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate
37Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
38Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
39Plasma enhanced atomic layer deposition of SiNx:H and SiO2
40Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
41Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
42Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
43Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
44Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
45Reliability and parasitic issues in GaN-based power HEMTs: a review
46Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
47Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
48Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
49Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
50SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
51Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
52Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
53Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
54Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
55Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
56The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
57Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
58Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
59Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
60Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
61Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
62Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
63Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode