SiNx Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing SiNx films returned 69 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
2Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
3Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
4Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
5Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
6Reliability and parasitic issues in GaN-based power HEMTs: a review
7Characteristics of Plasma-Enhanced Atomic Layer Deposited RuSiN as a Diffusion Barrier against Cu
8Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
9Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
10AlGaN/GaN power schottky diodes with anode dimension up to 100 mm on 200 mm Si substrate
11Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
12A Silicon Nitride MIM Capacitor for Analog/Mixed-Signal Integrated Circuit using Manufacturable Atomic Layer Deposition Equipment
13Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
14High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
15Patterning of silicon nitride for CMOS gate spacer technology. III. Investigation of synchronously pulsed CH3F/O2/He plasmas
16Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
17Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
18Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
19Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook
20Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
21Anisotropic Inter-Poly Dielectric technology for conventional floating gate type flash memory
22Combined PEALD Gate-Dielectric and In-Situ SiN Cap-Layer for Reduced Vth Shift and RDS-ON Dispersion of AlGaN/GaN HEMTs on 200 mm Si Wafer
23Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
24Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
25Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
26Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
27Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
28Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
29Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
30Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
31Measurements and modeling of the impact of radical recombination on silicon nitride growth in microwave plasma assisted atomic layer deposition
32Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
33Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
34CMOS-compatible Replacement Metal Gate InGaAs-OI FinFET With ION= 156 μA/μm at VDD= 0.5 V and IOFF= 100 nA/μm
35Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
36Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
37Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
38Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
39Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
40Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
41Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
42Plasma enhanced atomic layer deposition of SiNx:H and SiO2
43Evaluation of Stress Induced by Plasma Assisted ALD SiN Film
44SiNx passivated GaN HEMT by plasma enhanced atomic layer deposition
45Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
46Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
47Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
48Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces
49Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
50Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
51High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure
52Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
53Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
54Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
55Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
56Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena
57Impacts of conduction band offset and border traps on Vth instability of gate recessed normally-off GaN MIS-HEMTs
58Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode
59Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate
60Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
61Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
62Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
63Atomic Layer Deposition of SiN for spacer applications in high-end logic devices
64Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
65Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates
66Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
67Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
68Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers
69Challenges in spacer process development for leading-edge high-k metal gate technology