Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 39, 042401 (2021)
Date:
2021-04-20

Author Information

Name Institution
Antony Premkumar PeterIMEC
Takayama TomomiIMEC
Ebisudani TaishiIMEC
Shiba EiichiroIMEC
Alfonso SepulvedaIMEC
Timothee BlanquartIMEC
Yosuke KimuraIMEC
Sujith SubramanianIMEC
Sylvain BaudotIMEC
Briggs BasoeneIMEC
Anshul GuptaIMEC
Anabela VelosoIMEC
Elena CapogrecoIMEC
Hans MertensIMEC
Johan MeersschautIMEC
Thierry ConardIMEC
Praveen DaraIMEC
Jef GeypenIMEC
Gerardo MartinezIMEC
Dmitry BatukIMEC
Steven DemuynckIMEC
Pierre MorinIMEC

Films

Plasma SiNx

Hardware used: ASM Eagle XP8

CAS#: 13760-02-6

CAS#: 7727-37-9


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Uniformity
Analysis: Ellipsometry

Characteristic: Density
Analysis: Custom

Characteristic: Wet Etch Resistance
Analysis: Custom

Characteristic: Etch Rate
Analysis: Custom

Characteristic: Stress
Analysis: Wafer Curvature

Characteristic: Bonding States
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Oxidation Resistance
Analysis: Custom

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Substrates

Si with native oxide
SiGe

Notes

1617