Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 39, 042401 (2021)
Date:
2021-04-20
Author Information
Name | Institution |
---|---|
Antony Premkumar Peter | IMEC |
Takayama Tomomi | IMEC |
Ebisudani Taishi | IMEC |
Shiba Eiichiro | IMEC |
Alfonso Sepulveda | IMEC |
Timothee Blanquart | IMEC |
Yosuke Kimura | IMEC |
Sujith Subramanian | IMEC |
Sylvain Baudot | IMEC |
Briggs Basoene | IMEC |
Anshul Gupta | IMEC |
Anabela Veloso | IMEC |
Elena Capogreco | IMEC |
Hans Mertens | IMEC |
Johan Meersschaut | IMEC |
Thierry Conard | IMEC |
Praveen Dara | IMEC |
Jef Geypen | IMEC |
Gerardo Martinez | IMEC |
Dmitry Batuk | IMEC |
Steven Demuynck | IMEC |
Pierre Morin | IMEC |
Films
Plasma SiNx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Uniformity
Analysis: Ellipsometry
Characteristic: Density
Analysis: Custom
Characteristic: Wet Etch Resistance
Analysis: Custom
Characteristic: Etch Rate
Analysis: Custom
Characteristic: Stress
Analysis: Wafer Curvature
Characteristic: Bonding States
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Oxidation Resistance
Analysis: Custom
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Substrates
Si with native oxide |
SiGe |
Notes
1617 |