Nitrogen, N2, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 238 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atmospheric pressure plasma enhanced spatial ALD of silver
2AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
3AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
4Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
5Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
6Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
7Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
8Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
9Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
10Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
11Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
12Atomic layer epitaxy for quantum well nitride-based devices
13Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
14Perspectives on future directions in III-N semiconductor research
15ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
16AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
17AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
18Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
19Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
20Atomic layer epitaxy for quantum well nitride-based devices
21Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
22Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
23Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
24Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
25Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
26Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
27Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
28Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
29Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
30GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
31Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
32Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
33Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
34Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
35High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
36High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
37Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
38Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
39Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
40Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
41Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
42Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
43Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
44Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
45Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
46Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
47New materials for memristive switching
48Nitride memristors
49Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
50PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
51Perspectives on future directions in III-N semiconductor research
52Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
53Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
54Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
55Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
56Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
57Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
58Radical Enhanced Atomic Layer Deposition of Metals and Oxides
59Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
60Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
61Structural and optical characterization of low-temperature ALD crystalline AlN
62The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
63Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
64XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
65Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
66Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
67Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
68Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
69Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
70Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
71Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
72Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
73Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
74Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
75Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
76Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
77Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
78Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
79Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
80Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
81Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
82Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
83A route to low temperature growth of single crystal GaN on sapphire
84Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
85Demonstration of flexible thin film transistors with GaN channels
86Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
87Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
88Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
89Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
90Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
91Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
92Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
93Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
94Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
95Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
96Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
97Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
98Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
99Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
100Perspectives on future directions in III-N semiconductor research
101Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
102Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
103Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
104Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
105Gadolinium nitride films deposited using a PEALD based process
106Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
107Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
108Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
109An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
110Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
111Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
112Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
113Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
114Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
115Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
116Atomic layer epitaxy for quantum well nitride-based devices
117Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
118Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
119Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
120Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
121Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
122Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
123Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
124Perspectives on future directions in III-N semiconductor research
125Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
126Atomic Layer Deposition of the Solid Electrolyte LiPON
127Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
128Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
129Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
130Atomic Layer Deposition of Niobium Nitride from Different Precursors
131Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
132Plasma-enhanced atomic layer deposition of superconducting niobium nitride
133Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
134Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
135Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
136Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
137Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
138Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
139Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
140Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
141Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
142In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
143Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
144Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
145Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
146Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
147Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
148Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
149Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
150Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
151Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
152Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
153Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
154Plasma enhanced atomic layer deposition of SiNx:H and SiO2
155Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
156Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
157Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
158Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
159Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
160Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
161Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
162Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
163Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
164Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
165Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
166Modal properties of a strip-loaded horizontal slot waveguide
167Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
168Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
169Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
170Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
171Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
172Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
173Trilayer Tunnel Selectors for Memristor Memory Cells
174Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
175Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
176ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
177ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
178Annealing behavior of ferroelectric Si-doped HfO2 thin films
179Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
180Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
181Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
182Atomic layer deposition of titanium nitride from TDMAT precursor
183Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
184Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
185Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
186Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
187Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
188Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
189Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
190Fabrication and deformation of three-dimensional hollow ceramic nanostructures
191Fully CMOS-compatible titanium nitride nanoantennas
192High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
193Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
194Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
195Microwave properties of superconducting atomic-layer deposited TiN films
196New materials for memristive switching
197Nitride memristors
198Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
199Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
200Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
201Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
202Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
203Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
204Radical Enhanced Atomic Layer Deposition of Metals and Oxides
205Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
206Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
207Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
208Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
209Silicon nanowire networks for multi-stage thermoelectric modules
210Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
211Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
212Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
213Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
214TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
215In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
216Analysis of nitrogen species in titanium oxynitride ALD films
217Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
218Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
219In-gap states in titanium dioxide and oxynitride atomic layer deposited films
220Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
221Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
222Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
223Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
224Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
225Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
226A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
227Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
228Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
229Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
230A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
231Plasma-enhanced atomic layer deposition of tungsten nitride
232AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
233Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
234Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
235Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
236Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
237Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
238Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation


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