N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 318 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atmospheric pressure plasma enhanced spatial ALD of silver
2AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
3AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
4Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
5Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
6Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
7In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
8Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
9Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
10Atomic layer epitaxy for quantum well nitride-based devices
11Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
12Perspectives on future directions in III-N semiconductor research
13A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
14ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
15AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
16AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
17AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
18Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
19Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
20Atomic layer epitaxy for quantum well nitride-based devices
21Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
22Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
23Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
24Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
25Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
26Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
27Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
28Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
29Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
30Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
31GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
32Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
33Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
34Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
35Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
36Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
37High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
38High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
39Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
40Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
41Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
42Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
43Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
44Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
45Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
46New materials for memristive switching
47Nitride memristors
48PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
49Perspectives on future directions in III-N semiconductor research
50Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
51Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
52Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
53Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
54Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
55Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
56Radical Enhanced Atomic Layer Deposition of Metals and Oxides
57Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
58Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
59Structural and optical characterization of low-temperature ALD crystalline AlN
60The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
61Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
62XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
63Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
64Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
65Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
66Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
67Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
68Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
69Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
70Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
71Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
72Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
73Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
74Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
75Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
76Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
77Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
78Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
79A route to low temperature growth of single crystal GaN on sapphire
80Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
81Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
82Perspectives on future directions in III-N semiconductor research
83Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
84Gadolinium nitride films deposited using a PEALD based process
85Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
86Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
87Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
88Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
89An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
90Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
91Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
92The effects of plasma treatment on the thermal stability of HfO2 thin films
93Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
94Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
95Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
96Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
97The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
98Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
99Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
100Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
101Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
102Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
103Atomic layer epitaxy for quantum well nitride-based devices
104Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
105Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
106Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
107Perspectives on future directions in III-N semiconductor research
108Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
109Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
110Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
111Atomic Layer Deposition of the Solid Electrolyte LiPON
112Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
113Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
114Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
115Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
116Atomic Layer Deposition of Niobium Nitride from Different Precursors
117Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
118Plasma-enhanced atomic layer deposition of superconducting niobium nitride
119Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
120Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
121Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
122Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
123Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
124In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
125Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
126Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
127Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
128Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
129Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
130In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
131Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
132Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
133Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
134Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
135Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
136Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
137Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
138Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
139Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
140Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
141Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
142High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
143Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
144Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
145Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
146Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
147Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
148Plasma enhanced atomic layer deposition of SiNx:H and SiO2
149Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
150Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
151Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
152Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
153Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
154Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
155Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
156Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
157Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
158Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
159Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
160Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
161Modal properties of a strip-loaded horizontal slot waveguide
162Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
163Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
164Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
165Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
166Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
167Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
168Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
169Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
170Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
171Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
172Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
173The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
174The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
175Trilayer Tunnel Selectors for Memristor Memory Cells
176Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
177Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
178Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
179Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
180ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
181ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
182ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
183Annealing behavior of ferroelectric Si-doped HfO2 thin films
184Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
185Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
186Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
187Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
188Atomic layer deposition of titanium nitride for quantum circuits
189Atomic layer deposition of titanium nitride from TDMAT precursor
190Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
191Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
192Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
193Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
194Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
195Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
196Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
197Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
198Fabrication and deformation of three-dimensional hollow ceramic nanostructures
199Film Uniformity in Atomic Layer Deposition
200Fully CMOS-compatible titanium nitride nanoantennas
201Fundamental beam studies of radical enhanced atomic layer deposition of TiN
202Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
203High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
204In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
205In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
206Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
207Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
208Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
209Microwave properties of superconducting atomic-layer deposited TiN films
210New materials for memristive switching
211Nitride memristors
212Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
213Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
214Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
215Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
216Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
217Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
218Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
219Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
220Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
221Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
222Plasma-enhanced atomic layer deposition of titanium vanadium nitride
223Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
224Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
225Radical Enhanced Atomic Layer Deposition of Metals and Oxides
226Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
227Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
228Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
229Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
230Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
231Silicon nanowire networks for multi-stage thermoelectric modules
232Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
233Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
234Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
235Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
236TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
237Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
238In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
239Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
240Analysis of nitrogen species in titanium oxynitride ALD films
241Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
242Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
243In-gap states in titanium dioxide and oxynitride atomic layer deposited films
244Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
245Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
246Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
247Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
248Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
249Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
250Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
251Plasma-enhanced atomic layer deposition of titanium vanadium nitride
252Plasma-enhanced atomic layer deposition of titanium vanadium nitride
253Plasma-enhanced atomic layer deposition of vanadium nitride
254A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
255Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
256Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
257Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
258A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
259Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
260Plasma-enhanced atomic layer deposition of tungsten nitride
261Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
262Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
263AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
264Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
265Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
266Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
267Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
268Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
269PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
270Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
271Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation


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