N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 272 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atmospheric pressure plasma enhanced spatial ALD of silver
2AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
3AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
4Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
5Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
6Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
7In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
8Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
9Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
10Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
11Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
12Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
13Atomic layer epitaxy for quantum well nitride-based devices
14Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
15Perspectives on future directions in III-N semiconductor research
16ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
17AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
18AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
19Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
20Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
21Atomic layer epitaxy for quantum well nitride-based devices
22Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
23Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
24Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
25Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
26Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
27Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
28Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
29Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
30Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
31Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
32Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
33GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
34Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
35Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
36Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
37Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
38Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
39High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
40High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
41Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
42Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
43Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
44Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
45Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
46Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
47Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
48Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
49Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
50Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
51New materials for memristive switching
52Nitride memristors
53Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
54PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
55Perspectives on future directions in III-N semiconductor research
56Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
57Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
58Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
59Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
60Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
61Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
62Radical Enhanced Atomic Layer Deposition of Metals and Oxides
63Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow-cathode plasma-assisted atomic layer deposition
64Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
65Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
66Structural and optical characterization of low-temperature ALD crystalline AlN
67The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
68Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
69XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
70Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
71Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
72Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
73Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
74Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
75Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
76Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
77Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
78Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
79Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
80Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
81Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
82Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
83Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
84Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
85Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
86Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
87Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
88A route to low temperature growth of single crystal GaN on sapphire
89Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
90Demonstration of flexible thin film transistors with GaN channels
91Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
92Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
93Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
94Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
95Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
96Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
97Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
98Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
99Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
100Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
101Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
102Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
103Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
104Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
105Perspectives on future directions in III-N semiconductor research
106Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
107Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
108Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
109Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
110Gadolinium nitride films deposited using a PEALD based process
111Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
112Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
113Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
114An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
115Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
116Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
117Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
118Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
119Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
120Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
121Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
122Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
123Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
124Atomic layer epitaxy for quantum well nitride-based devices
125Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
126Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
127Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
128Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
129Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
130Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
131Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
132Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
133Perspectives on future directions in III-N semiconductor research
134Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
135Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
136Atomic Layer Deposition of the Solid Electrolyte LiPON
137Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
138Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
139Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
140Atomic Layer Deposition of Niobium Nitride from Different Precursors
141Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
142Plasma-enhanced atomic layer deposition of superconducting niobium nitride
143Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
144Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
145Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
146Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
147Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
148Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
149Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
150Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
151Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
152In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
153Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
154Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
155Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
156Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
157Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
158Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
159Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
160Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
161Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
162Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
163Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
164Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
165Plasma enhanced atomic layer deposition of SiNx:H and SiO2
166Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
167Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
168Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
169Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
170Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
171Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
172Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
173Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
174Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
175Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
176Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
177Modal properties of a strip-loaded horizontal slot waveguide
178Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
179Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
180Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
181Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
182Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
183Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
184Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
185Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
186The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
187The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
188Trilayer Tunnel Selectors for Memristor Memory Cells
189Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
190Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
191Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
192ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
193ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
194Annealing behavior of ferroelectric Si-doped HfO2 thin films
195Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
196Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
197Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
198Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
199Atomic layer deposition of titanium nitride for quantum circuits
200Atomic layer deposition of titanium nitride from TDMAT precursor
201Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
202Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
203Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
204Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
205Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
206Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
207Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
208Fabrication and deformation of three-dimensional hollow ceramic nanostructures
209Fully CMOS-compatible titanium nitride nanoantennas
210Fundamental beam studies of radical enhanced atomic layer deposition of TiN
211High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
212In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
213Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
214Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
215Microwave properties of superconducting atomic-layer deposited TiN films
216New materials for memristive switching
217Nitride memristors
218Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
219Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
220Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
221Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
222Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
223Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
224Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
225Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
226Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
227Plasma-enhanced atomic layer deposition of titanium vanadium nitride
228Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
229Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
230Radical Enhanced Atomic Layer Deposition of Metals and Oxides
231Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
232Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
233Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
234Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
235Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
236Silicon nanowire networks for multi-stage thermoelectric modules
237Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
238Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
239Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
240Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
241TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
242Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
243In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
244Analysis of nitrogen species in titanium oxynitride ALD films
245Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
246Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
247In-gap states in titanium dioxide and oxynitride atomic layer deposited films
248Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
249Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
250Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
251Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
252Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
253Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
254Plasma-enhanced atomic layer deposition of titanium vanadium nitride
255Plasma-enhanced atomic layer deposition of titanium vanadium nitride
256A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
257Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
258Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
259Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
260A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
261Plasma-enhanced atomic layer deposition of tungsten nitride
262Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
263Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
264AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
265Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
266Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
267Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
268Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
269Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
270PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
271Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
272Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation


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