N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 262 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atmospheric pressure plasma enhanced spatial ALD of silver
2AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
3AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
4Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
5Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
6Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
7In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
8Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
9Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
10Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
11Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
12Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
13Atomic layer epitaxy for quantum well nitride-based devices
14Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
15Perspectives on future directions in III-N semiconductor research
16ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
17AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
18AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
19Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
20Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
21Atomic layer epitaxy for quantum well nitride-based devices
22Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
23Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
24Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
25Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
26Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
27Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
28Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
29Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
30Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
31Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
32GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
33Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
34Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
35Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
36Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
37Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
38High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
39High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
40Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
41Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
42Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
43Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
44Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
45Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
46Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
47Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
48Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
49Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
50New materials for memristive switching
51Nitride memristors
52Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
53PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
54Perspectives on future directions in III-N semiconductor research
55Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
56Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
57Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
58Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
59Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
60Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
61Radical Enhanced Atomic Layer Deposition of Metals and Oxides
62Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
63Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
64Structural and optical characterization of low-temperature ALD crystalline AlN
65The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
66Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
67XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
68Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
69Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
70Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
71Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
72Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
73Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
74Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
75Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
76Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
77Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
78Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
79Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
80Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
81Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
82Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
83Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
84Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
85Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
86A route to low temperature growth of single crystal GaN on sapphire
87Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
88Demonstration of flexible thin film transistors with GaN channels
89Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
90Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
91Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
92Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
93Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
94Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
95Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
96Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
97Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
98Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
99Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
100Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
101Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
102Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
103Perspectives on future directions in III-N semiconductor research
104Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
105Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
106Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
107Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
108Gadolinium nitride films deposited using a PEALD based process
109Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
110Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
111Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
112An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
113Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
114Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
115Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
116Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
117Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
118Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
119Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
120Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
121Atomic layer epitaxy for quantum well nitride-based devices
122Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
123Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
124Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
125Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
126Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
127Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
128Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
129Perspectives on future directions in III-N semiconductor research
130Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
131Atomic Layer Deposition of the Solid Electrolyte LiPON
132Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
133Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
134Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
135Atomic Layer Deposition of Niobium Nitride from Different Precursors
136Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
137Plasma-enhanced atomic layer deposition of superconducting niobium nitride
138Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
139Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
140Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
141Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
142Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
143Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
144Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
145Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
146Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
147In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
148Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
149Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
150Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
151Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
152Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
153Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
154Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
155Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
156Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
157Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
158Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
159Plasma enhanced atomic layer deposition of SiNx:H and SiO2
160Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
161Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
162Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
163Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
164Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
165Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
166Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
167Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
168Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
169Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
170Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
171Modal properties of a strip-loaded horizontal slot waveguide
172Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
173Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
174Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
175Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
176Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
177Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
178Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
179The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
180The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
181Trilayer Tunnel Selectors for Memristor Memory Cells
182Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
183Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
184Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
185ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
186ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
187Annealing behavior of ferroelectric Si-doped HfO2 thin films
188Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
189Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
190Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
191Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
192Atomic layer deposition of titanium nitride for quantum circuits
193Atomic layer deposition of titanium nitride from TDMAT precursor
194Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
195Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
196Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
197Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
198Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
199Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
200Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
201Fabrication and deformation of three-dimensional hollow ceramic nanostructures
202Fully CMOS-compatible titanium nitride nanoantennas
203Fundamental beam studies of radical enhanced atomic layer deposition of TiN
204High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
205In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
206Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
207Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
208Microwave properties of superconducting atomic-layer deposited TiN films
209New materials for memristive switching
210Nitride memristors
211Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
212Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
213Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
214Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
215Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
216Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
217Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
218Plasma-enhanced atomic layer deposition of titanium vanadium nitride
219Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
220Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
221Radical Enhanced Atomic Layer Deposition of Metals and Oxides
222Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
223Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
224Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
225Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
226Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
227Silicon nanowire networks for multi-stage thermoelectric modules
228Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
229Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
230Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
231Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
232TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
233Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
234In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
235Analysis of nitrogen species in titanium oxynitride ALD films
236Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
237Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
238In-gap states in titanium dioxide and oxynitride atomic layer deposited films
239Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
240Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
241Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
242Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
243Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
244Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
245Plasma-enhanced atomic layer deposition of titanium vanadium nitride
246Plasma-enhanced atomic layer deposition of titanium vanadium nitride
247A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
248Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
249Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
250Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
251A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
252Plasma-enhanced atomic layer deposition of tungsten nitride
253Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
254AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
255Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
256Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
257Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
258Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
259Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
260PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
261Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
262Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation


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