N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
2Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
3ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
4Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
5Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
6Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
7Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
8Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
9Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
10New materials for memristive switching
11Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
12Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
13Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
14AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
15Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
16In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
17Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
18Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
19An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
20Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
21Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
22Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
23Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
24Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
25In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
26Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
27Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
28Nitride memristors
29Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
30Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
31Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
32Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
33Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
34Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
35Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
36Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
37Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
38Fabrication and deformation of three-dimensional hollow ceramic nanostructures
39Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
40Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
41Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
42Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
43Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
44Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
45Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
46Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
47Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
48Atomic layer deposition of titanium nitride from TDMAT precursor
49Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
50Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
51Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
52Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
53ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
54Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
55Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
56Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
57Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
58Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
59Atomic layer epitaxy for quantum well nitride-based devices
60Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
61Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
62Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
63Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
64Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
65Sub-10-nm ferroelectric Gd-doped HfO2 layers
66Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
67Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
68Nonvolatile Capacitive Crossbar Array for In-Memory Computing
69Radical Enhanced Atomic Layer Deposition of Metals and Oxides
70AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
71Gallium nitride thin films by microwave plasma-assisted ALD
72Radical Enhanced Atomic Layer Deposition of Metals and Oxides
73Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content
74Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
75Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
76High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
77XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
78Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
79Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
80Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
81Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
82Silicon nanowire networks for multi-stage thermoelectric modules
83Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
84Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
85Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
86Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
87Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
88Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
89Performance of Samples with Novel SRF Materials and Growth Techniques
90Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
91Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
92Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
93Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
94Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
95Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
96Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
97Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
98Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
99Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
100Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
101Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
102Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
103Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
104Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
105Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
106Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
107High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
108Perspectives on future directions in III-N semiconductor research
109AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
110Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
111Film Uniformity in Atomic Layer Deposition
112Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
113Nitride memristors
114Annealing behavior of ferroelectric Si-doped HfO2 thin films
115Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
116Fully CMOS-compatible titanium nitride nanoantennas
117Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
118High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
119Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
120Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
121Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
122Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
123Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
124Fundamental beam studies of radical enhanced atomic layer deposition of TiN
125TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
126Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
127Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
128Perspectives on future directions in III-N semiconductor research
129Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
130Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
131GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
132A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
133High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
134Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
135Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
136Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
137Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
138Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
139Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
140Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
141The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
142Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
143Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
144Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
145Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
146Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
147Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
148Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
149Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
150Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
151Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
152Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
153Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
154Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
155ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
156Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
157Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
158Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
159Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
160Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
161Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
162Plasma-enhanced atomic layer deposition of titanium vanadium nitride
163SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
164Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
165The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
166Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
167Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
168RF Characterization of Novel Superconducting Materials and Multilayers
169In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
170Atomic Layer Deposition of the Solid Electrolyte LiPON
171Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
172Perspectives on future directions in III-N semiconductor research
173Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
174Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
175Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
176Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
177Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
178Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
179Modal properties of a strip-loaded horizontal slot waveguide
180Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
181Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
182Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
183Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
184Gadolinium nitride films deposited using a PEALD based process
185Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
186Plasma enhanced atomic layer deposition of SiNx:H and SiO2
187Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
188Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
189Plasma-enhanced atomic layer deposition of vanadium nitride
190RF Characterization of Novel Superconducting Materials and Multilayers
191New materials for memristive switching
192Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
193Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
194Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
195Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
196Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
197Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
198Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
199Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
200AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
201Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
202Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
203Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
204Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
205Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
206Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
207Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
208A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
209In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
210Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
211Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
212Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
213Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
214Structural and optical characterization of low-temperature ALD crystalline AlN
215Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
216Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
217Trilayer Tunnel Selectors for Memristor Memory Cells
218The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
219Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
220Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
221AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
222Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
223Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
224Plasma-enhanced atomic layer deposition of titanium vanadium nitride
225Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride
226Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
227Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
228Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
229Atomic layer epitaxy for quantum well nitride-based devices
230Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
231PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
232Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
233Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
234Plasma-enhanced atomic layer deposition of Co on metal surfaces
235Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
236Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
237A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
238Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
239A route to low temperature growth of single crystal GaN on sapphire
240Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
241Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
242ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
243Perspectives on future directions in III-N semiconductor research
244Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
245AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
246Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
247Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
248Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
249Plasma-enhanced atomic layer deposition of superconducting niobium nitride
250Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
251The effects of plasma treatment on the thermal stability of HfO2 thin films
252Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
253Atomic layer epitaxy for quantum well nitride-based devices
254Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
255Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
256Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
257Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
258Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
259Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
260Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
261Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
262AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
263In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
264Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
265Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
266In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
267Atmospheric pressure plasma enhanced spatial ALD of silver
268Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
269Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
270The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
271Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
272Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
273Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
274Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
275Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
276Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
277Plasma-enhanced atomic layer deposition of tungsten nitride
278Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
279Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
280Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
281A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
282Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
283Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
284Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
285Atomic layer deposition of titanium nitride for quantum circuits
286Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
287Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
288Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
289Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
290Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
291Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
292High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
293Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
294Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
295Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
296Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
297Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
298Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
299Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
300Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
301Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
302Plasma-enhanced atomic layer deposition of titanium vanadium nitride
303Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
304Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
305Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
306Analysis of nitrogen species in titanium oxynitride ALD films
307Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
308Sub-nanometer heating depth of atomic layer annealing
309Microwave properties of superconducting atomic-layer deposited TiN films
310Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
311Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
312The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
313Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
314PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
315In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
316Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
317Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
318Plasma-enhanced atomic layer deposition of ruthenium metal on free-standing carbon nanotube forest for 3D flexible binder-less supercapacitor electrodes
319Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
320Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
321Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
322Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
323Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
324Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
325Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
326Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
327In-gap states in titanium dioxide and oxynitride atomic layer deposited films
328Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
329Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
330Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
331Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
332Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
333Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
334Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
335Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
336Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
337Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
338Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
339The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
340Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
341Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
342Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
343Atomic Layer Deposition of Niobium Nitride from Different Precursors
344Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
345Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates