N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
2Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
3Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
4Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride
5Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
6Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
7Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
8Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
9Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
10Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
11Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
12Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
13Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
14Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
15Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
16Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
17Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
18Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
19Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
20Perspectives on future directions in III-N semiconductor research
21Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
22Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
23Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
24Microwave properties of superconducting atomic-layer deposited TiN films
25Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
26Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
27Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
28Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
29Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
30Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
31Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
32Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
33Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
34Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
35Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
36Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
37Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
38Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
39Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
40Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
41Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
42Radical Enhanced Atomic Layer Deposition of Metals and Oxides
43Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
44In-gap states in titanium dioxide and oxynitride atomic layer deposited films
45Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
46Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
47Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
48Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
49Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
50Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
51Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
52Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
53Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
54Structural and optical characterization of low-temperature ALD crystalline AlN
55Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
56Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
57Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
58A route to low temperature growth of single crystal GaN on sapphire
59Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
60Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
61Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
62Fully CMOS-compatible titanium nitride nanoantennas
63High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
64High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
65Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
66Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
67Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
68Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
69A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
70Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
71Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
72Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
73Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
74The effects of plasma treatment on the thermal stability of HfO2 thin films
75Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
76Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
77Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
78Annealing behavior of ferroelectric Si-doped HfO2 thin films
79Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
80Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
81Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
82Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
83Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
84Atomic layer epitaxy for quantum well nitride-based devices
85Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
86Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
87In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
88Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
89Nitride memristors
90In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
91Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
92Plasma-enhanced atomic layer deposition of ruthenium metal on free-standing carbon nanotube forest for 3D flexible binder-less supercapacitor electrodes
93The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
94Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
95Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
96Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
97Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
98Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
99Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
100Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
101Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
102Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
103XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
104Sub-10-nm ferroelectric Gd-doped HfO2 layers
105Atomic layer epitaxy for quantum well nitride-based devices
106Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
107Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
108Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
109Plasma-enhanced atomic layer deposition of superconducting niobium nitride
110AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
111Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
112Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
113Fundamental beam studies of radical enhanced atomic layer deposition of TiN
114Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
115Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
116Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content
117Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
118SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
119Plasma-enhanced atomic layer deposition of titanium vanadium nitride
120Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
121Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
122AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
123Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
124Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
125Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
126Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
127Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
128Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
129Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
130Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
131The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
132Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
133Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
134Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
135Radical Enhanced Atomic Layer Deposition of Metals and Oxides
136Analysis of nitrogen species in titanium oxynitride ALD films
137Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
138Perspectives on future directions in III-N semiconductor research
139ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
140Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
141Atomic layer epitaxy for quantum well nitride-based devices
142Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
143In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
144Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
145Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
146Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
147Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
148Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
149Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
150AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
151Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
152In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
153Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
154Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
155A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
156Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
157TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
158Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
159Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
160Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
161Nonvolatile Capacitive Crossbar Array for In-Memory Computing
162PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
163Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
164Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
165In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
166Trilayer Tunnel Selectors for Memristor Memory Cells
167Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
168Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
169Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
170Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
171Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
172Sub-nanometer heating depth of atomic layer annealing
173Perspectives on future directions in III-N semiconductor research
174Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
175Atmospheric pressure plasma enhanced spatial ALD of silver
176Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
177Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
178Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
179AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
180Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
181Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
182Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
183Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
184Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
185Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
186Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
187Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
188Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
189ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
190Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
191Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
192AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
193Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
194Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
195In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
196Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
197AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
198High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
199In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
200RF Characterization of Novel Superconducting Materials and Multilayers
201Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
202New materials for memristive switching
203Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
204Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
205The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
206Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
207Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
208Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
209Silicon nanowire networks for multi-stage thermoelectric modules
210Gallium nitride thin films by microwave plasma-assisted ALD
211Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
212Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
213Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
214Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
215Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
216Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
217Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
218Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
219Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
220Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
221Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
222Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
223Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
224Atomic Layer Deposition of the Solid Electrolyte LiPON
225Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
226Atomic layer deposition of titanium nitride from TDMAT precursor
227Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
228Atomic layer deposition of titanium nitride for quantum circuits
229Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
230Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
231Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
232Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
233Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
234ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
235Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
236Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
237Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
238Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
239Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
240Perspectives on future directions in III-N semiconductor research
241Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
242Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
243Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
244Modal properties of a strip-loaded horizontal slot waveguide
245Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
246Plasma-enhanced atomic layer deposition of titanium vanadium nitride
247Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
248RF Characterization of Novel Superconducting Materials and Multilayers
249Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
250Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
251PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
252Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
253Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
254Performance of Samples with Novel SRF Materials and Growth Techniques
255Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
256Nitride memristors
257Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
258Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
259Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
260Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
261Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
262Plasma-enhanced atomic layer deposition of titanium vanadium nitride
263Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
264High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
265Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
266Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
267Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
268Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
269Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
270Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
271Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
272Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
273Film Uniformity in Atomic Layer Deposition
274Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
275Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
276Plasma-enhanced atomic layer deposition of vanadium nitride
277Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
278Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
279Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
280Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
281Atomic Layer Deposition of Niobium Nitride from Different Precursors
282Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
283Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
284A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
285Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
286Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
287The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
288ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
289New materials for memristive switching
290The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
291Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
292Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
293Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
294The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
295Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
296GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
297Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
298Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
299Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
300Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
301Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
302Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
303Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
304A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
305Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
306Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
307Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
308Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
309Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
310An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
311Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
312Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
313Plasma-enhanced atomic layer deposition of Co on metal surfaces
314Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
315Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
316Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
317Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
318AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
319Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
320High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
321Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
322Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
323Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
324Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
325Plasma-enhanced atomic layer deposition of tungsten nitride
326Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
327Plasma enhanced atomic layer deposition of SiNx:H and SiO2
328Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
329Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
330Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
331Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
332Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
333Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
334Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
335Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
336Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
337Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
338Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
339Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
340Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
341Gadolinium nitride films deposited using a PEALD based process
342Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
343Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
344Fabrication and deformation of three-dimensional hollow ceramic nanostructures
345Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment