N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
2SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
3Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
4In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
5Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
6Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
7Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
8Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
9Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
10Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
11Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
12Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
13Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
14Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
15PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
16Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
17Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
18Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
19Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
20Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
21New materials for memristive switching
22Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
23Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
24Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
25In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
26In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
27Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
28Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
29Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
30Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
31Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
32High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
33Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
34Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
35Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
36Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
37ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
38Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
39Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
40ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
41Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
42Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
43Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
44Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
45Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
46Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
47Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
48Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
49In-gap states in titanium dioxide and oxynitride atomic layer deposited films
50Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
51Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
52Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
53Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
54High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
55Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
56A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
57Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
58AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
59Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
60Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
61Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
62Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
63Sub-10-nm ferroelectric Gd-doped HfO2 layers
64Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
65Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
66Fundamental beam studies of radical enhanced atomic layer deposition of TiN
67Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
68Perspectives on future directions in III-N semiconductor research
69Atomic Layer Deposition of Niobium Nitride from Different Precursors
70Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
71Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
72Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
73Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
74Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
75Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
76Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
77Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
78An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
79Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
80Trilayer Tunnel Selectors for Memristor Memory Cells
81Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
82Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
83Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
84Structural and optical characterization of low-temperature ALD crystalline AlN
85Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
86Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
87Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
88Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
89A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
90Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
91Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
92Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
93Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
94Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
95Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
96Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
97Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
98Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
99Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
100Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
101Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
102Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
103Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
104Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
105Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
106Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
107Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
108Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
109Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
110In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
111Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
112Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
113Atomic layer epitaxy for quantum well nitride-based devices
114RF Characterization of Novel Superconducting Materials and Multilayers
115Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
116Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
117Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
118Plasma-enhanced atomic layer deposition of superconducting niobium nitride
119ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
120Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
121Nitride memristors
122Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
123Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
124Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
125Gadolinium nitride films deposited using a PEALD based process
126Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
127Perspectives on future directions in III-N semiconductor research
128AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
129Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
130Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
131Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
132Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
133Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
134Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
135Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
136Analysis of nitrogen species in titanium oxynitride ALD films
137Atomic layer epitaxy for quantum well nitride-based devices
138Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
139Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
140Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
141Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
142GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
143Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
144Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
145Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
146Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
147Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
148The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
149A route to low temperature growth of single crystal GaN on sapphire
150Fully CMOS-compatible titanium nitride nanoantennas
151Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
152Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
153Microwave properties of superconducting atomic-layer deposited TiN films
154Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
155Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
156Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
157Radical Enhanced Atomic Layer Deposition of Metals and Oxides
158Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
159Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
160Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
161A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
162Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
163Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
164High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
165Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
166Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
167Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
168Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
169Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
170Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
171New materials for memristive switching
172Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
173Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
174Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
175Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
176Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
177Atomic layer epitaxy for quantum well nitride-based devices
178Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
179Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
180Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
181Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride
182Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
183Plasma-enhanced atomic layer deposition of Co on metal surfaces
184The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
185Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
186Annealing behavior of ferroelectric Si-doped HfO2 thin films
187Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
188Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
189Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
190Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
191Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
192Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
193Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
194Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
195Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
196Plasma-enhanced atomic layer deposition of ruthenium metal on free-standing carbon nanotube forest for 3D flexible binder-less supercapacitor electrodes
197AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
198Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
199Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
200Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
201Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
202Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
203Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
204Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
205Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
206Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
207Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
208Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
209Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
210Atomic layer deposition of titanium nitride from TDMAT precursor
211Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
212Gallium nitride thin films by microwave plasma-assisted ALD
213Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
214Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
215Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
216Fabrication and deformation of three-dimensional hollow ceramic nanostructures
217The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
218Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
219AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
220Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
221Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
222Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
223Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
224Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
225Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
226Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
227Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
228Plasma-enhanced atomic layer deposition of vanadium nitride
229Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
230Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
231Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
232Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
233Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
234Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
235Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
236Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
237In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
238Plasma-enhanced atomic layer deposition of titanium vanadium nitride
239Plasma-enhanced atomic layer deposition of tungsten nitride
240Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
241High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
242Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
243Modal properties of a strip-loaded horizontal slot waveguide
244Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
245The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
246The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
247Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
248Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
249Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
250Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
251In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
252Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
253TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
254Plasma enhanced atomic layer deposition of SiNx:H and SiO2
255Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
256Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
257Plasma-enhanced atomic layer deposition of titanium vanadium nitride
258High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
259Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
260Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
261Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
262Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
263Atomic Layer Deposition of the Solid Electrolyte LiPON
264Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
265RF Characterization of Novel Superconducting Materials and Multilayers
266Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
267Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
268Radical Enhanced Atomic Layer Deposition of Metals and Oxides
269Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
270Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
271PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
272Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
273A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
274Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
275Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
276Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
277Atmospheric pressure plasma enhanced spatial ALD of silver
278Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
279Performance of Samples with Novel SRF Materials and Growth Techniques
280Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
281Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
282Nonvolatile Capacitive Crossbar Array for In-Memory Computing
283Film Uniformity in Atomic Layer Deposition
284Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
285Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
286Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
287XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
288Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
289Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
290Perspectives on future directions in III-N semiconductor research
291Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
292Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
293AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
294Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
295ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
296Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
297Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
298Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
299Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
300AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
301Sub-nanometer heating depth of atomic layer annealing
302Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
303Nitride memristors
304Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
305Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
306Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
307Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
308Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
309Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
310Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content
311Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
312Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
313Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
314The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
315Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
316Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
317Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
318Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
319Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
320Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
321Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
322Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
323Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
324Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
325Silicon nanowire networks for multi-stage thermoelectric modules
326Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
327Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
328Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
329Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
330Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
331The effects of plasma treatment on the thermal stability of HfO2 thin films
332Perspectives on future directions in III-N semiconductor research
333In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
334Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
335Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
336Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
337Plasma-enhanced atomic layer deposition of titanium vanadium nitride
338Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
339Atomic layer deposition of titanium nitride for quantum circuits
340Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
341Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
342AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
343Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
344Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
345Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries