N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
2Sub-10-nm ferroelectric Gd-doped HfO2 layers
3Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
4Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
5Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
6Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
7Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
8Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
9Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
10Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
11Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
12Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
13Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
14Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
15Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
16Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
17Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
18Atomic layer epitaxy for quantum well nitride-based devices
19Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
20Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
21Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
22Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
23Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content
24Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
25The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
26Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
27Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
28Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
29Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
30Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
31PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
32Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
33Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
34Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
35Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
36Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
37Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
38Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
39Atomic layer deposition of titanium nitride from TDMAT precursor
40Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
41Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
42Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
43New materials for memristive switching
44Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
45Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
46Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
47Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
48Nitride memristors
49Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
50Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
51Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
52Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
53Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
54Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
55Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
56Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
57Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
58Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
59Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
60Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
61Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
62Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
63Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
64Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
65Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
66ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
67Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
68In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
69Plasma-enhanced atomic layer deposition of titanium vanadium nitride
70Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
71Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
72Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
73Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
74Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
75Fully CMOS-compatible titanium nitride nanoantennas
76RF Characterization of Novel Superconducting Materials and Multilayers
77Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
78Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
79In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
80Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
81Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
82Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
83Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
84Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
85Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
86Perspectives on future directions in III-N semiconductor research
87Nonvolatile Capacitive Crossbar Array for In-Memory Computing
88Plasma-enhanced atomic layer deposition of titanium vanadium nitride
89Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
90Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
91Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
92Plasma-enhanced atomic layer deposition of ruthenium metal on free-standing carbon nanotube forest for 3D flexible binder-less supercapacitor electrodes
93Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
94The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
95Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
96Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
97AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
98Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
99A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
100Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
101Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
102Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
103Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
104Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
105Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
106Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
107Modal properties of a strip-loaded horizontal slot waveguide
108Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
109Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
110Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
111In-gap states in titanium dioxide and oxynitride atomic layer deposited films
112Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
113Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
114Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
115Analysis of nitrogen species in titanium oxynitride ALD films
116Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
117Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
118Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
119Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
120Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
121Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
122Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
123Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
124High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
125GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
126ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
127Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
128The effects of plasma treatment on the thermal stability of HfO2 thin films
129Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
130PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
131High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
132RF Characterization of Novel Superconducting Materials and Multilayers
133Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
134Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
135Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
136TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
137High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
138High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
139Atomic layer epitaxy for quantum well nitride-based devices
140Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
141Annealing behavior of ferroelectric Si-doped HfO2 thin films
142Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
143The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
144Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
145Atomic layer deposition of titanium nitride for quantum circuits
146Radical Enhanced Atomic Layer Deposition of Metals and Oxides
147Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
148Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
149Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
150Radical Enhanced Atomic Layer Deposition of Metals and Oxides
151Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
152Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
153Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
154AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
155Fabrication and deformation of three-dimensional hollow ceramic nanostructures
156Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
157Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
158XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
159Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
160Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
161Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
162Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
163Silicon nanowire networks for multi-stage thermoelectric modules
164Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
165Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
166Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
167Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
168Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
169Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
170Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
171In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
172Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
173Film Uniformity in Atomic Layer Deposition
174Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
175Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
176Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
177Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
178Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
179Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
180Perspectives on future directions in III-N semiconductor research
181In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
182Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
183Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
184Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
185New materials for memristive switching
186Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
187Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride
188The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
189AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
190A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
191AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
192Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
193Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
194Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
195Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
196Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
197Perspectives on future directions in III-N semiconductor research
198Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
199A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
200Plasma-enhanced atomic layer deposition of titanium vanadium nitride
201Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
202Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
203Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
204Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
205Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
206Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
207Atomic layer epitaxy for quantum well nitride-based devices
208SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
209Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
210Microwave properties of superconducting atomic-layer deposited TiN films
211Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
212Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
213Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
214A route to low temperature growth of single crystal GaN on sapphire
215Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
216Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
217Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
218Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
219The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
220Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
221Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
222Plasma-enhanced atomic layer deposition of tungsten nitride
223Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
224Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
225Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
226Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
227Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
228Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
229Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
230Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
231Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
232Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
233Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
234AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
235Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
236In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
237Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
238Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
239Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
240High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
241Sub-nanometer heating depth of atomic layer annealing
242Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
243AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
244Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
245Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
246Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
247Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
248Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
249ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
250In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
251Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
252Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
253Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
254Gallium nitride thin films by microwave plasma-assisted ALD
255Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
256Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
257Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
258Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
259Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
260Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
261Structural and optical characterization of low-temperature ALD crystalline AlN
262Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
263In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
264Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
265Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
266Atomic Layer Deposition of Niobium Nitride from Different Precursors
267Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
268Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
269Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
270Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
271Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
272Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
273Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
274Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
275Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
276Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
277Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
278Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
279Fundamental beam studies of radical enhanced atomic layer deposition of TiN
280Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
281Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
282Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
283Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
284Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
285ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
286Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
287Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
288Plasma-enhanced atomic layer deposition of vanadium nitride
289Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
290Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
291Trilayer Tunnel Selectors for Memristor Memory Cells
292Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
293AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
294Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
295Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
296Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
297Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
298Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
299Nitride memristors
300Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
301Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
302Plasma-enhanced atomic layer deposition of superconducting niobium nitride
303Perspectives on future directions in III-N semiconductor research
304Plasma-enhanced atomic layer deposition of Co on metal surfaces
305Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
306Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
307Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
308Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
309Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
310Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
311Plasma enhanced atomic layer deposition of SiNx:H and SiO2
312Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
313Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
314Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
315Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
316The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
317Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
318Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
319Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
320Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
321Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
322Gadolinium nitride films deposited using a PEALD based process
323Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
324Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
325Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
326Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
327Atmospheric pressure plasma enhanced spatial ALD of silver
328Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
329Performance of Samples with Novel SRF Materials and Growth Techniques
330Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
331Atomic Layer Deposition of the Solid Electrolyte LiPON
332Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
333Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
334Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
335Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
336Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
337Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
338Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
339An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
340Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
341Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
342Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
343Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
344A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
345Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process