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Nitrogen, N2, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 232 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atmospheric pressure plasma enhanced spatial ALD of silver
2AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
3AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
4Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
5Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
6Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
7Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
8Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
9Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
10Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
11Atomic layer epitaxy for quantum well nitride-based devices
12Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
13Perspectives on future directions in III-N semiconductor research
14ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
15AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
16AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
17Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
18Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
19Atomic layer epitaxy for quantum well nitride-based devices
20Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
21Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
22Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
23Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
24Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
25Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
26Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
27Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
28Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
29GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
30Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
31Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
32Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
33Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
34High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
35High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
36Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
37Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
38Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
39Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
40Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
41Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
42Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
43Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
44Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
45Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
46New materials for memristive switching
47Nitride memristors
48Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
49PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
50Perspectives on future directions in III-N semiconductor research
51Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
52Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
53Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
54Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
55Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
56Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
57Radical Enhanced Atomic Layer Deposition of Metals and Oxides
58Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
59Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
60Structural and optical characterization of low-temperature ALD crystalline AlN
61The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
62Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
63XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
64Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
65Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
66Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
67Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
68Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
69Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
70Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
71Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
72Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
73Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
74Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
75Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
76Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
77Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
78Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
79Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
80Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
81A route to low temperature growth of single crystal GaN on sapphire
82Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
83Demonstration of flexible thin film transistors with GaN channels
84Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
85Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
86Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
87Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
88Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
89Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
90Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
91Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
92Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
93Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
94Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
95Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
96Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
97Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
98Perspectives on future directions in III-N semiconductor research
99Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
100Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
101Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
102Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
103Gadolinium nitride films deposited using a PEALD based process
104Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
105Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
106Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
107An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
108Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
109Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
110Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
111Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
112Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
113Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
114Atomic layer epitaxy for quantum well nitride-based devices
115Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
116Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
117Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
118Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
119Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
120Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
121Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
122Perspectives on future directions in III-N semiconductor research
123Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
124Atomic Layer Deposition of the Solid Electrolyte LiPON
125Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
126Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
127Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
128Atomic Layer Deposition of Niobium Nitride from Different Precursors
129Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
130Plasma-enhanced atomic layer deposition of superconducting niobium nitride
131Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
132Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
133Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
134Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
135Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
136Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
137Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
138Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
139Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
140In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
141Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
142Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
143Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
144Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
145Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
146Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
147Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
148Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
149Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
150Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
151Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
152Plasma enhanced atomic layer deposition of SiNx:H and SiO2
153Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
154Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
155Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
156Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
157Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
158Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
159Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
160Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
161Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
162Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
163Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
164Modal properties of a strip-loaded horizontal slot waveguide
165Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
166Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
167Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
168Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
169Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
170Trilayer Tunnel Selectors for Memristor Memory Cells
171Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
172Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
173ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
174ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
175Annealing behavior of ferroelectric Si-doped HfO2 thin films
176Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
177Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
178Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
179Atomic layer deposition of titanium nitride from TDMAT precursor
180Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
181Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
182Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
183Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
184Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
185Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
186Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
187Fabrication and deformation of three-dimensional hollow ceramic nanostructures
188Fully CMOS-compatible titanium nitride nanoantennas
189High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
190Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
191Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
192Microwave properties of superconducting atomic-layer deposited TiN films
193New materials for memristive switching
194Nitride memristors
195Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
196Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
197Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
198Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
199Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
200Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
201Radical Enhanced Atomic Layer Deposition of Metals and Oxides
202Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
203Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
204Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
205Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
206Silicon nanowire networks for multi-stage thermoelectric modules
207Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
208Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
209Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
210TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
211In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
212Analysis of nitrogen species in titanium oxynitride ALD films
213Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
214Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
215Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
216Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
217Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
218Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
219Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
220A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
221Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
222Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
223Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
224A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
225Plasma-enhanced atomic layer deposition of tungsten nitride
226AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
227Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
228Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
229Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
230Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
231Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
232Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation

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