N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 303 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atmospheric pressure plasma enhanced spatial ALD of silver
2AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
3AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
4Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
5Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
6Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
7In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
8Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
9Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
10Atomic layer epitaxy for quantum well nitride-based devices
11Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
12Perspectives on future directions in III-N semiconductor research
13ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
14AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
15AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
16Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
17Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
18Atomic layer epitaxy for quantum well nitride-based devices
19Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
20Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
21Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
22Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
23Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
24Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
25Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
26Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
27Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
28Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
29GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
30Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
31Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
32Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
33Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
34Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
35High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
36High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
37Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
38Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
39Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
40Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
41Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
42Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
43Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
44New materials for memristive switching
45Nitride memristors
46PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
47Perspectives on future directions in III-N semiconductor research
48Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
49Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
50Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
51Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
52Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
53Radical Enhanced Atomic Layer Deposition of Metals and Oxides
54Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
55Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
56Structural and optical characterization of low-temperature ALD crystalline AlN
57The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
58Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
59XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
60Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
61Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
62Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
63Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
64Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
65Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
66Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
67Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
68Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
69Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
70Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
71Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
72Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
73Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
74A route to low temperature growth of single crystal GaN on sapphire
75Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
76Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
77Perspectives on future directions in III-N semiconductor research
78Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
79Gadolinium nitride films deposited using a PEALD based process
80Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
81Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
82Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
83Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
84An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
85Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
86Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
87The effects of plasma treatment on the thermal stability of HfO2 thin films
88Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
89Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
90Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
91Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
92The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
93Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
94Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
95Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
96Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
97Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
98Atomic layer epitaxy for quantum well nitride-based devices
99Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
100Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
101Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
102Perspectives on future directions in III-N semiconductor research
103Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
104Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
105Atomic Layer Deposition of the Solid Electrolyte LiPON
106Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
107Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
108Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
109Atomic Layer Deposition of Niobium Nitride from Different Precursors
110Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
111Plasma-enhanced atomic layer deposition of superconducting niobium nitride
112Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
113Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
114Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
115Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
116Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
117In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
118Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
119Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
120Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
121Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
122In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
123Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
124Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
125Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
126Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
127Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
128Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
129Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
130Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
131Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
132Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
133Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
134High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
135Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
136Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
137Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
138Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
139Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
140Plasma enhanced atomic layer deposition of SiNx:H and SiO2
141Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
142Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
143Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
144Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
145Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
146Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
147Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
148Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
149Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
150Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
151Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
152Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
153Modal properties of a strip-loaded horizontal slot waveguide
154Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
155Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
156Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
157Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
158Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
159Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
160Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
161Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
162Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
163Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
164Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
165The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
166The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
167Trilayer Tunnel Selectors for Memristor Memory Cells
168Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
169Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
170Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
171Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
172ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
173ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
174Annealing behavior of ferroelectric Si-doped HfO2 thin films
175Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
176Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
177Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
178Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
179Atomic layer deposition of titanium nitride for quantum circuits
180Atomic layer deposition of titanium nitride from TDMAT precursor
181Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
182Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
183Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
184Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
185Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
186Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
187Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
188Fabrication and deformation of three-dimensional hollow ceramic nanostructures
189Film Uniformity in Atomic Layer Deposition
190Fully CMOS-compatible titanium nitride nanoantennas
191Fundamental beam studies of radical enhanced atomic layer deposition of TiN
192Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
193High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
194In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
195In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
196Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
197Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
198Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
199Microwave properties of superconducting atomic-layer deposited TiN films
200New materials for memristive switching
201Nitride memristors
202Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
203Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
204Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
205Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
206Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
207Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
208Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
209Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
210Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
211Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
212Plasma-enhanced atomic layer deposition of titanium vanadium nitride
213Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
214Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
215Radical Enhanced Atomic Layer Deposition of Metals and Oxides
216Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
217Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
218Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
219Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
220Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
221Silicon nanowire networks for multi-stage thermoelectric modules
222Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
223Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
224Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
225Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
226TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
227Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
228In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
229Analysis of nitrogen species in titanium oxynitride ALD films
230Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
231Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
232In-gap states in titanium dioxide and oxynitride atomic layer deposited films
233Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
234Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
235Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
236Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
237Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
238Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
239Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
240Plasma-enhanced atomic layer deposition of titanium vanadium nitride
241Plasma-enhanced atomic layer deposition of titanium vanadium nitride
242Plasma-enhanced atomic layer deposition of vanadium nitride
243A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
244Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
245Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
246Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
247A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
248Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
249Plasma-enhanced atomic layer deposition of tungsten nitride
250Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
251Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
252AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
253Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
254Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
255Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
256Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
257Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
258PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
259Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
260Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation


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