N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
2Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
3Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
4Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
5Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
6Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
7In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
8Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
9Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
10AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
11Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
12Radical Enhanced Atomic Layer Deposition of Metals and Oxides
13Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride
14Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
15Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
16Annealing behavior of ferroelectric Si-doped HfO2 thin films
17Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
18Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
19Atomic layer epitaxy for quantum well nitride-based devices
20Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
21Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
22Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
23Perspectives on future directions in III-N semiconductor research
24PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
25Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
26Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
27Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
28Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
29Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
30Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
31Silicon nanowire networks for multi-stage thermoelectric modules
32Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
33High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
34Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
35Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
36Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
37Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
38Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
39Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
40Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
41Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
42AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
43Microwave properties of superconducting atomic-layer deposited TiN films
44AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
45Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
46Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
47Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
48Atmospheric pressure plasma enhanced spatial ALD of silver
49Sub-10-nm ferroelectric Gd-doped HfO2 layers
50Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
51A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
52Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
53Atomic layer deposition of titanium nitride for quantum circuits
54Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
55Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
56Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
57Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
58PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
59Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
60Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
61The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
62Perspectives on future directions in III-N semiconductor research
63Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
64Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
65Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
66Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
67Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
68XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
69Atomic layer deposition of titanium nitride from TDMAT precursor
70Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
71The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
72Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
73Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
74Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
75Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
76Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
77Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
78Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
79Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
80Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
81Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
82Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
83Atomic layer epitaxy for quantum well nitride-based devices
84Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
85A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
86A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
87Atomic layer epitaxy for quantum well nitride-based devices
88Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
89Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
90Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
91Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
92Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
93Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
94Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
95Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
96Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
97Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
98Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
99Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
100Perspectives on future directions in III-N semiconductor research
101Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
102Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
103Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
104Radical Enhanced Atomic Layer Deposition of Metals and Oxides
105Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
106Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
107Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
108TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
109Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
110Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
111Film Uniformity in Atomic Layer Deposition
112Gadolinium nitride films deposited using a PEALD based process
113The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
114Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
115Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
116Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
117Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
118Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
119Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
120Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
121Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
122Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
123Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
124Plasma-enhanced atomic layer deposition of titanium vanadium nitride
125Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
126Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
127Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
128Trilayer Tunnel Selectors for Memristor Memory Cells
129Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
130Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
131Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
132Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
133Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
134A route to low temperature growth of single crystal GaN on sapphire
135ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
136Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
137Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
138Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
139AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
140Plasma-enhanced atomic layer deposition of vanadium nitride
141Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
142Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
143Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
144Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
145Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
146Plasma-enhanced atomic layer deposition of superconducting niobium nitride
147In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
148Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
149In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
150Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
151Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
152Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
153Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
154Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
155Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
156Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
157Plasma-enhanced atomic layer deposition of ruthenium metal on free-standing carbon nanotube forest for 3D flexible binder-less supercapacitor electrodes
158Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
159Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
160Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
161Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
162Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
163Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
164Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
165Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
166Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
167Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
168In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
169Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
170Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
171Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
172New materials for memristive switching
173Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
174Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
175Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
176ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
177Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
178Plasma-enhanced atomic layer deposition of titanium vanadium nitride
179Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
180Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
181Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
182Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
183Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
184High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
185Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
186High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
187Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
188Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
189Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
190Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
191Nitride memristors
192Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
193Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
194Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
195Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
196Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
197Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
198Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
199Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
200Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
201Plasma enhanced atomic layer deposition of SiNx:H and SiO2
202Analysis of nitrogen species in titanium oxynitride ALD films
203Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
204Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
205Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
206Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
207Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
208In-gap states in titanium dioxide and oxynitride atomic layer deposited films
209Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
210In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
211Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
212AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
213Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
214Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
215Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
216Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
217ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
218Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
219Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
220Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
221Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
222Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
223Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
224Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
225Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
226Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
227Fully CMOS-compatible titanium nitride nanoantennas
228Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
229Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
230Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
231Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
232Plasma-enhanced atomic layer deposition of tungsten nitride
233Performance of Samples with Novel SRF Materials and Growth Techniques
234Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
235The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
236Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
237Perspectives on future directions in III-N semiconductor research
238Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
239Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
240Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
241Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
242Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
243Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
244Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
245An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
246Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
247Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
248Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
249Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
250Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
251Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
252Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
253Sub-nanometer heating depth of atomic layer annealing
254Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
255Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
256Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
257Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
258Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
259Modal properties of a strip-loaded horizontal slot waveguide
260Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
261Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
262Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
263Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
264RF Characterization of Novel Superconducting Materials and Multilayers
265Plasma-enhanced atomic layer deposition of titanium vanadium nitride
266Structural and optical characterization of low-temperature ALD crystalline AlN
267Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
268Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
269Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
270Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
271Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
272Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
273Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
274Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
275Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
276Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
277In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
278Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
279Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
280Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
281Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
282Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
283RF Characterization of Novel Superconducting Materials and Multilayers
284Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
285Atomic Layer Deposition of the Solid Electrolyte LiPON
286Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
287Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
288Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
289Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
290New materials for memristive switching
291Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
292Nonvolatile Capacitive Crossbar Array for In-Memory Computing
293Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
294Fundamental beam studies of radical enhanced atomic layer deposition of TiN
295GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
296High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
297Fabrication and deformation of three-dimensional hollow ceramic nanostructures
298Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
299Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
300Gallium nitride thin films by microwave plasma-assisted ALD
301Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
302Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
303Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
304The effects of plasma treatment on the thermal stability of HfO2 thin films
305Atomic Layer Deposition of Niobium Nitride from Different Precursors
306Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
307Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
308AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
309Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
310The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
311AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
312Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
313Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
314SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
315Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
316Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
317High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
318Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
319Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
320Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
321Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
322Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
323Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
324Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
325Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
326Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
327Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
328Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
329Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
330In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
331Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
332Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
333Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
334Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
335Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content
336Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
337Plasma-enhanced atomic layer deposition of Co on metal surfaces
338Nitride memristors
339Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
340Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
341Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
342ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
343Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
344The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
345A controlled growth of WNx and WCx thin films prepared by atomic layer deposition