N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Atmospheric pressure plasma enhanced spatial ALD of silver
2AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
3AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
4Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
5Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
6Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
7In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
8Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
9Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
10Atomic layer epitaxy for quantum well nitride-based devices
11Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
12Perspectives on future directions in III-N semiconductor research
13A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
14A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
15ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
16AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
17AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
18AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
19AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
20Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
21Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
22Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
23Atomic layer epitaxy for quantum well nitride-based devices
24Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
25Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
26Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
27Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
28Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
29Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
30Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
31Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
32Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
33Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
34Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
35GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
36Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
37Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
38Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
39Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
40Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
41High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
42High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
43Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
44Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
45Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
46Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
47Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
48Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
49Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
50New materials for memristive switching
51Nitride memristors
52PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
53Perspectives on future directions in III-N semiconductor research
54Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
55Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
56Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
57Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
58Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
59Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
60Radical Enhanced Atomic Layer Deposition of Metals and Oxides
61Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
62Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
63Structural and optical characterization of low-temperature ALD crystalline AlN
64Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
65The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
66Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
67Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
68XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
69Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
70Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
71Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
72Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
73Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
74Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
75Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
76Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
77Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
78Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
79Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
80Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
81Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
82Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
83Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
84Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
85In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
86Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
87Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
88A route to low temperature growth of single crystal GaN on sapphire
89Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
90Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
91Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
92Perspectives on future directions in III-N semiconductor research
93Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
94Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
95Gadolinium nitride films deposited using a PEALD based process
96Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
97Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
98Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
99Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
100An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
101Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
102Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
103The effects of plasma treatment on the thermal stability of HfO2 thin films
104Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
105Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
106Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
107Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
108The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
109Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
110Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
111Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
112Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
113Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
114Atomic layer epitaxy for quantum well nitride-based devices
115Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
116Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
117Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
118Perspectives on future directions in III-N semiconductor research
119Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
120The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
121Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
122Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
123Atomic Layer Deposition of the Solid Electrolyte LiPON
124Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
125Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
126Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
127Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
128Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
129Atomic Layer Deposition of Niobium Nitride from Different Precursors
130Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
131Plasma-enhanced atomic layer deposition of superconducting niobium nitride
132Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
133Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
134Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
135Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
136Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
137Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
138In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
139Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
140Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
141Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
142Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
143Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
144Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
145In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
146Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
147Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
148Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
149Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
150SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
151Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
152Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
153Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
154Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
155Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
156Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
157Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
158High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
159Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
160Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
161Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
162Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
163Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
164Plasma enhanced atomic layer deposition of SiNx:H and SiO2
165Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
166Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
167Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
168Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
169Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
170Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
171Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
172Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
173Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
174Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
175Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
176Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
177Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
178Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
179Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
180Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
181Modal properties of a strip-loaded horizontal slot waveguide
182Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
183Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
184Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
185Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
186Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
187Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
188High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
189Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
190Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
191Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
192Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
193Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
194The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
195The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
196Trilayer Tunnel Selectors for Memristor Memory Cells
197Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
198Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
199Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
200Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
201ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
202ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
203ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
204Annealing behavior of ferroelectric Si-doped HfO2 thin films
205Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
206Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
207Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
208Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
209Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
210Atomic layer deposition of titanium nitride for quantum circuits
211Atomic layer deposition of titanium nitride from TDMAT precursor
212Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
213Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
214Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
215Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
216Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
217Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
218Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
219Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
220Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
221Fabrication and deformation of three-dimensional hollow ceramic nanostructures
222Film Uniformity in Atomic Layer Deposition
223Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
224Fully CMOS-compatible titanium nitride nanoantennas
225Fundamental beam studies of radical enhanced atomic layer deposition of TiN
226Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
227High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
228In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
229In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
230Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
231Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
232Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
233Microwave properties of superconducting atomic-layer deposited TiN films
234New materials for memristive switching
235Nitride memristors
236Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
237Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
238Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
239Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
240Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
241Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
242Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
243Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
244Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
245Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
246Plasma-enhanced atomic layer deposition of titanium vanadium nitride
247Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
248Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
249Radical Enhanced Atomic Layer Deposition of Metals and Oxides
250Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
251Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
252Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
253Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
254Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
255Silicon nanowire networks for multi-stage thermoelectric modules
256Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
257Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
258Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
259Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
260TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
261Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
262Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
263Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
264In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
265Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
266Analysis of nitrogen species in titanium oxynitride ALD films
267Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
268Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
269In-gap states in titanium dioxide and oxynitride atomic layer deposited films
270Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
271Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
272Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
273Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
274Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
275Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
276Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
277Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
278Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
279Plasma-enhanced atomic layer deposition of titanium vanadium nitride
280Plasma-enhanced atomic layer deposition of titanium vanadium nitride
281Plasma-enhanced atomic layer deposition of vanadium nitride
282A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
283Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
284Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
285Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
286A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
287Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
288Plasma-enhanced atomic layer deposition of tungsten nitride
289Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
290Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
291AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
292Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
293Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
294Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
295Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
296Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
297PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
298Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
299Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation