| 1 | Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature |
| 2 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
| 3 | Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter |
| 4 | Annealing behavior of ferroelectric Si-doped HfO2 thin films |
| 5 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
| 6 | Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer |
| 7 | Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy |
| 8 | Plasma-Assisted ALD of LiPO(N) for Solid State Batteries |
| 9 | Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy |
| 10 | Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs |
| 11 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
| 12 | Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires |
| 13 | Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition |
| 14 | Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition |
| 15 | Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods |
| 16 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy |
| 17 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 18 | Plasma-enhanced atomic layer deposition of Co on metal surfaces |
| 19 | AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD |
| 20 | ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors |
| 21 | Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2 |
| 22 | Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma |
| 23 | Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes |
| 24 | Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT |
| 25 | Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx |
| 26 | Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators |
| 27 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 28 | XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition |
| 29 | Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 30 | High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
| 31 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
| 32 | PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen |
| 33 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 34 | Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method |
| 35 | ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs |
| 36 | Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate |
| 37 | Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films |
| 38 | Nitride memristors |
| 39 | Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma |
| 40 | Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier |
| 41 | RF Characterization of Novel Superconducting Materials and Multilayers |
| 42 | Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 43 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 44 | In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition |
| 45 | Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study |
| 46 | Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films |
| 47 | Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures |
| 48 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
| 49 | Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure |
| 50 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 51 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
| 52 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
| 53 | Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer |
| 54 | Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition |
| 55 | Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs |
| 56 | Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2 |
| 57 | Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode |
| 58 | Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry |
| 59 | Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition |
| 60 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 61 | Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions |
| 62 | Perspectives on future directions in III-N semiconductor research |
| 63 | Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries |
| 64 | Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer |
| 65 | Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions |
| 66 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 67 | Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride |
| 68 | Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN |
| 69 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
| 70 | Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing |
| 71 | Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy |
| 72 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 73 | Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition |
| 74 | Atomic layer epitaxy for quantum well nitride-based devices |
| 75 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
| 76 | Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics |
| 77 | Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition |
| 78 | Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition |
| 79 | Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories |
| 80 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 81 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 82 | Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals |
| 83 | Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material |
| 84 | Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition |
| 85 | Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance |
| 86 | Silicon nanowire networks for multi-stage thermoelectric modules |
| 87 | Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 |
| 88 | New materials for memristive switching |
| 89 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
| 90 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
| 91 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 92 | RF Characterization of Novel Superconducting Materials and Multilayers |
| 93 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 94 | Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition |
| 95 | Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition |
| 96 | Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films |
| 97 | Modal properties of a strip-loaded horizontal slot waveguide |
| 98 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 99 | Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8] |
| 100 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
| 101 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 102 | Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas |
| 103 | Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator |
| 104 | Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition |
| 105 | Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process |
| 106 | Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma |
| 107 | Atomic layer deposition of titanium nitride from TDMAT precursor |
| 108 | Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition |
| 109 | Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma |
| 110 | Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions |
| 111 | Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application |
| 112 | Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor |
| 113 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
| 114 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
| 115 | ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors |
| 116 | Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System |
| 117 | A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition |
| 118 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 119 | Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films |
| 120 | Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition |
| 121 | Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation |
| 122 | High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2 |
| 123 | Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition |
| 124 | Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices |
| 125 | Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas |
| 126 | Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils |
| 127 | Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition |
| 128 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
| 129 | Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes |
| 130 | Nitride memristors |
| 131 | Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures |
| 132 | Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes |
| 133 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 134 | Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time |
| 135 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 136 | AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing |
| 137 | Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN |
| 138 | Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition |
| 139 | In-gap states in titanium dioxide and oxynitride atomic layer deposited films |
| 140 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
| 141 | Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor |
| 142 | Atomic layer epitaxy for quantum well nitride-based devices |
| 143 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
| 144 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 145 | Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase |
| 146 | Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition |
| 147 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
| 148 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
| 149 | Fabrication and deformation of three-dimensional hollow ceramic nanostructures |
| 150 | Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD |
| 151 | Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries |
| 152 | The effects of plasma treatment on the thermal stability of HfO2 thin films |
| 153 | Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature |
| 154 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 155 | Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates |
| 156 | Analysis of nitrogen species in titanium oxynitride ALD films |
| 157 | Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy |
| 158 | In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating |
| 159 | Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition |
| 160 | Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition |
| 161 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
| 162 | Sub-10-nm ferroelectric Gd-doped HfO2 layers |
| 163 | In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices |
| 164 | Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition |
| 165 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 166 | Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources |
| 167 | Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition |
| 168 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
| 169 | Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition |
| 170 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
| 171 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
| 172 | Fully CMOS-compatible titanium nitride nanoantennas |
| 173 | SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition |
| 174 | Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs |
| 175 | Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy |
| 176 | Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films |
| 177 | Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor |
| 178 | Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment |
| 179 | Plasma-enhanced atomic layer deposition of palladium on a polymer substrate |
| 180 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 181 | Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers |
| 182 | Nonvolatile Capacitive Crossbar Array for In-Memory Computing |
| 183 | Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma |
| 184 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
| 185 | Plasma-enhanced atomic layer deposition of ruthenium metal on free-standing carbon nanotube forest for 3D flexible binder-less supercapacitor electrodes |
| 186 | The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films |
| 187 | In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films |
| 188 | A route to low temperature growth of single crystal GaN on sapphire |
| 189 | Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films |
| 190 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 191 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 192 | The physical properties of cubic plasma-enhanced atomic layer deposition TaN films |
| 193 | Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition |
| 194 | Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition |
| 195 | Trilayer Tunnel Selectors for Memristor Memory Cells |
| 196 | Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane |
| 197 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 198 | Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering |
| 199 | Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films |
| 200 | Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 201 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
| 202 | The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties |
| 203 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 204 | Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
| 205 | Film Uniformity in Atomic Layer Deposition |
| 206 | Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor |
| 207 | Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization |
| 208 | Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition |
| 209 | Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies |
| 210 | Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy |
| 211 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
| 212 | Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries |
| 213 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
| 214 | Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor |
| 215 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 216 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 217 | Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN |
| 218 | Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension |
| 219 | Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry |
| 220 | Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition |
| 221 | Plasma-enhanced atomic layer deposition of vanadium nitride |
| 222 | Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects |
| 223 | Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride |
| 224 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
| 225 | Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications |
| 226 | Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering |
| 227 | Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma |
| 228 | High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications |
| 229 | Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films |
| 230 | Fundamental beam studies of radical enhanced atomic layer deposition of TiN |
| 231 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |
| 232 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
| 233 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 234 | Plasma-enhanced atomic layer deposition of tungsten nitride |
| 235 | Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices |
| 236 | Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant |
| 237 | Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride |
| 238 | A controlled growth of WNx and WCx thin films prepared by atomic layer deposition |
| 239 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
| 240 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
| 241 | Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting |
| 242 | Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications |
| 243 | A controlled growth of WNx and WCx thin films prepared by atomic layer deposition |
| 244 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
| 245 | High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy |
| 246 | Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy |
| 247 | Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
| 248 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
| 249 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 250 | Plasma enhanced atomic layer deposition of SiNx:H and SiO2 |
| 251 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 252 | Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition |
| 253 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
| 254 | Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells |
| 255 | Atomic Layer Deposition of the Solid Electrolyte LiPON |
| 256 | Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer |
| 257 | Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy |
| 258 | Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries |
| 259 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
| 260 | Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation |
| 261 | Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 262 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
| 263 | Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties |
| 264 | Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights |
| 265 | Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content |
| 266 | Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process |
| 267 | Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten |
| 268 | Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment |
| 269 | Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements |
| 270 | Gadolinium nitride films deposited using a PEALD based process |
| 271 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
| 272 | Growth of aluminum nitride films by plasma-enhanced atomic layer deposition |
| 273 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
| 274 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
| 275 | Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers |
| 276 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
| 277 | Atomic layer epitaxy for quantum well nitride-based devices |
| 278 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
| 279 | AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms |
| 280 | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma |
| 281 | Sub-nanometer heating depth of atomic layer annealing |
| 282 | Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition |
| 283 | Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 284 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 285 | Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum |
| 286 | Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware |
| 287 | Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer |
| 288 | Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics |
| 289 | The role of plasma in plasma-enhanced atomic layer deposition of crystalline films |
| 290 | Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry |
| 291 | The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation |
| 292 | Plasma-enhanced atomic layer deposition of superconducting niobium nitride |
| 293 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 294 | Atomic layer deposition of TiN for the fabrication of nanomechanical resonators |
| 295 | Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology |
| 296 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
| 297 | Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
| 298 | Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations |
| 299 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
| 300 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
| 301 | Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study |
| 302 | ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices |
| 303 | Atomic Layer Deposition of Niobium Nitride from Different Precursors |
| 304 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 305 | Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization |
| 306 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
| 307 | Perspectives on future directions in III-N semiconductor research |
| 308 | Perspectives on future directions in III-N semiconductor research |
| 309 | Gallium nitride thin films by microwave plasma-assisted ALD |
| 310 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 311 | PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity |
| 312 | Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration |
| 313 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
| 314 | High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition |
| 315 | Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane |
| 316 | Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper |
| 317 | Performance of Samples with Novel SRF Materials and Growth Techniques |
| 318 | Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth |
| 319 | Atomic layer deposition of titanium nitride for quantum circuits |
| 320 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
| 321 | Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition |
| 322 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
| 323 | Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries |
| 324 | Atmospheric pressure plasma enhanced spatial ALD of silver |
| 325 | Microwave properties of superconducting atomic-layer deposited TiN films |
| 326 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
| 327 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 328 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 329 | Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods |
| 330 | Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor |
| 331 | Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition |
| 332 | GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation |
| 333 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
| 334 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
| 335 | Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry |
| 336 | Characteristics of TiO2 Films Prepared by ALD With and Without Plasma |
| 337 | New materials for memristive switching |
| 338 | AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs |
| 339 | Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition |
| 340 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 341 | Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating |
| 342 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
| 343 | Structural and optical characterization of low-temperature ALD crystalline AlN |
| 344 | Perspectives on future directions in III-N semiconductor research |
| 345 | In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition |
