N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
2Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
3Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
4Microwave properties of superconducting atomic-layer deposited TiN films
5Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
6Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
7Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
8Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
9Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
10Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
11Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
12AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
13The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
14High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
15Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
16A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
17Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
18TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
19Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
20Atmospheric pressure plasma enhanced spatial ALD of silver
21Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
22Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
23Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
24Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
25Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
26AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
27Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
28Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
29Nitride memristors
30Perspectives on future directions in III-N semiconductor research
31Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
32RF Characterization of Novel Superconducting Materials and Multilayers
33Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
34Plasma-enhanced atomic layer deposition of tungsten nitride
35Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
36Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
37Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
38Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
39Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
40Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
41Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
42High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
43Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
44Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
45AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
46Nitride memristors
47Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
48In-gap states in titanium dioxide and oxynitride atomic layer deposited films
49Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
50Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
51The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
52Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
53Plasma-enhanced atomic layer deposition of Co on metal surfaces
54Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
55Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
56Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
57Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
58Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
59Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
60Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
61Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
62A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
63Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
64SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
65Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
66Fundamental beam studies of radical enhanced atomic layer deposition of TiN
67PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
68Atomic Layer Deposition of Niobium Nitride from Different Precursors
69Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
70Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
71Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
72Fabrication and deformation of three-dimensional hollow ceramic nanostructures
73Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
74Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
75Performance of Samples with Novel SRF Materials and Growth Techniques
76An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
77Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
78Plasma-enhanced atomic layer deposition of titanium vanadium nitride
79In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
80Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
81Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
82Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
83Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
84Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
85Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
86Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
87Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
88Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
89Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
90Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
91Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
92Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
93In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
94Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
95The effects of plasma treatment on the thermal stability of HfO2 thin films
96Structural and optical characterization of low-temperature ALD crystalline AlN
97Analysis of nitrogen species in titanium oxynitride ALD films
98Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
99Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
100Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
101Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
102Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
103Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
104Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
105Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
106Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
107Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
108Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
109In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
110Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
111Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
112PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
113Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
114ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
115A route to low temperature growth of single crystal GaN on sapphire
116Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
117Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
118Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
119Trilayer Tunnel Selectors for Memristor Memory Cells
120Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
121Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
122Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
123Plasma-enhanced atomic layer deposition of vanadium nitride
124The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
125Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
126Perspectives on future directions in III-N semiconductor research
127Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
128Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
129High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
130Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
131Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
132Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
133AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
134Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
135Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
136Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
137Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
138Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
139Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
140Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
141Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
142Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
143Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
144Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
145Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
146Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
147Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
148Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
149Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
150ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
151Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
152Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
153Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
154Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
155New materials for memristive switching
156Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
157Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
158Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
159Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
160Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
161Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
162Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
163Perspectives on future directions in III-N semiconductor research
164Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
165Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
166Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
167Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
168In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
169Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
170Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
171Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
172Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
173Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
174Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
175Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
176Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
177Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
178Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
179Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
180Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
181Plasma-enhanced atomic layer deposition of ruthenium metal on free-standing carbon nanotube forest for 3D flexible binder-less supercapacitor electrodes
182Perspectives on future directions in III-N semiconductor research
183Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
184Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
185Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
186Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
187Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
188Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
189Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
190Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
191Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
192Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
193Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
194Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
195A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
196Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
197Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
198Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
199Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
200Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
201High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
202Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
203Plasma-enhanced atomic layer deposition of titanium vanadium nitride
204Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
205Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
206Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
207Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
208Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
209Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
210Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
211Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
212Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
213Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
214Atomic layer deposition of titanium nitride from TDMAT precursor
215Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
216Atomic layer epitaxy for quantum well nitride-based devices
217Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride
218Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
219Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
220ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
221Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
222Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
223Atomic layer epitaxy for quantum well nitride-based devices
224Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
225The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
226Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
227Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
228Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
229High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
230Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
231Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
232XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
233Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
234RF Characterization of Novel Superconducting Materials and Multilayers
235Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
236Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
237Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
238Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
239Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
240Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
241Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
242Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
243Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
244New materials for memristive switching
245ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
246Plasma enhanced atomic layer deposition of SiNx:H and SiO2
247Modal properties of a strip-loaded horizontal slot waveguide
248Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
249Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
250Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
251Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
252Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
253Fully CMOS-compatible titanium nitride nanoantennas
254Nonvolatile Capacitive Crossbar Array for In-Memory Computing
255Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
256Silicon nanowire networks for multi-stage thermoelectric modules
257AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
258Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
259In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
260Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
261Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
262Atomic Layer Deposition of the Solid Electrolyte LiPON
263In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
264Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
265Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
266The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
267Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
268Gadolinium nitride films deposited using a PEALD based process
269Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
270Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
271Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
272Sub-nanometer heating depth of atomic layer annealing
273Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
274Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
275The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
276Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
277A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
278AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
279Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
280Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
281Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
282Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
283Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
284Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
285Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
286Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
287In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
288Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
289Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
290Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
291Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
292Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
293Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
294Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
295Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
296Plasma-enhanced atomic layer deposition of titanium vanadium nitride
297Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
298Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
299Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
300Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
301Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
302Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
303Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
304Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
305Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
306Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
307Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
308Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
309Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
310Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
311Atomic layer deposition of titanium nitride for quantum circuits
312Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
313Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
314Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
315Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
316Atomic layer epitaxy for quantum well nitride-based devices
317AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
318Radical Enhanced Atomic Layer Deposition of Metals and Oxides
319Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
320GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
321Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
322Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
323Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content
324Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
325Gallium nitride thin films by microwave plasma-assisted ALD
326Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
327Radical Enhanced Atomic Layer Deposition of Metals and Oxides
328Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
329Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
330Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
331Annealing behavior of ferroelectric Si-doped HfO2 thin films
332Sub-10-nm ferroelectric Gd-doped HfO2 layers
333Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
334Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
335Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
336Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
337Film Uniformity in Atomic Layer Deposition
338Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
339Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
340Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
341Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
342Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
343Plasma-enhanced atomic layer deposition of superconducting niobium nitride
344Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
345Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties