N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
2Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
3Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
4Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
5Silicon nanowire networks for multi-stage thermoelectric modules
6Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
7Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
8Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
9Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
10Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
11Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
12In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
13AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
14Sub-10-nm ferroelectric Gd-doped HfO2 layers
15Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
16Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
17Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
18Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
19An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
20Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
21Modal properties of a strip-loaded horizontal slot waveguide
22Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
23Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
24Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
25Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
26Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
27Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
28Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
29High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
30Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
31ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
32In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
33Atomic layer deposition of titanium nitride from TDMAT precursor
34Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
35Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
36Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
37Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
38Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
39Radical Enhanced Atomic Layer Deposition of Metals and Oxides
40Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
41Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
42Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
43Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
44Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
45Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
46Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
47The effects of plasma treatment on the thermal stability of HfO2 thin films
48Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
49High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
50Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
51Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
52Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
53Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
54A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
55Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
56Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
57Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
58Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
59Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
60Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
61Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
62AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
63Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
64Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
65Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
66ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
67Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
68GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
69Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
70Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
71In-gap states in titanium dioxide and oxynitride atomic layer deposited films
72Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
73Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
74Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
75Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
76PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
77Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
78Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
79Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
80Plasma-enhanced atomic layer deposition of titanium vanadium nitride
81Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
82Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
83Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
84Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
85Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
86Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
87Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
88Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
89Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
90Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
91Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
92Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
93Atomic Layer Deposition of the Solid Electrolyte LiPON
94Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
95Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
96The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
97Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
98AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
99Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
100Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
101Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
102Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
103Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
104Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
105Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
106In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
107Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
108Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
109ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
110Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
111Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
112Analysis of nitrogen species in titanium oxynitride ALD films
113Plasma-enhanced atomic layer deposition of titanium vanadium nitride
114Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
115Nonvolatile Capacitive Crossbar Array for In-Memory Computing
116Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
117Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
118Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
119A route to low temperature growth of single crystal GaN on sapphire
120Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
121Plasma-enhanced atomic layer deposition of Co on metal surfaces
122Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
123Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
124Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
125Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
126Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
127Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
128Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
129Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
130Perspectives on future directions in III-N semiconductor research
131Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
132Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
133Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
134Film Uniformity in Atomic Layer Deposition
135Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
136Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
137Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
138Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
139Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
140Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content
141Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
142Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
143Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
144Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
145Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
146Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
147Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
148PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
149Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
150Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
151Atomic layer deposition of titanium nitride for quantum circuits
152High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
153Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
154Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
155Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
156Gallium nitride thin films by microwave plasma-assisted ALD
157Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
158Microwave properties of superconducting atomic-layer deposited TiN films
159Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
160New materials for memristive switching
161Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
162Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
163Radical Enhanced Atomic Layer Deposition of Metals and Oxides
164In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
165Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
166Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
167Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
168Plasma-enhanced atomic layer deposition of tungsten nitride
169Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
170Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
171Fabrication and deformation of three-dimensional hollow ceramic nanostructures
172Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
173Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
174Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
175Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
176Sub-nanometer heating depth of atomic layer annealing
177Fully CMOS-compatible titanium nitride nanoantennas
178Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
179Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
180Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
181Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
182Annealing behavior of ferroelectric Si-doped HfO2 thin films
183Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
184Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
185Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
186Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
187Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
188Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
189Atmospheric pressure plasma enhanced spatial ALD of silver
190Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
191Atomic Layer Deposition of Niobium Nitride from Different Precursors
192Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
193Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
194Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
195XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
196Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
197Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
198Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
199Atomic layer epitaxy for quantum well nitride-based devices
200In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
201Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
202Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
203The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
204Perspectives on future directions in III-N semiconductor research
205AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
206TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
207Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
208Structural and optical characterization of low-temperature ALD crystalline AlN
209Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
210Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
211Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
212Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
213Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
214Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
215Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
216Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
217SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
218Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
219High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
220Atomic layer epitaxy for quantum well nitride-based devices
221Gadolinium nitride films deposited using a PEALD based process
222Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
223Trilayer Tunnel Selectors for Memristor Memory Cells
224Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
225ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
226Plasma-enhanced atomic layer deposition of titanium vanadium nitride
227Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
228In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
229Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
230Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
231Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
232Performance of Samples with Novel SRF Materials and Growth Techniques
233Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
234Perspectives on future directions in III-N semiconductor research
235Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
236Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
237Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
238The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
239Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
240Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
241Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
242Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
243AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
244Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
245Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
246Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
247Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
248Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
249Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
250Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
251Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
252Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
253Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
254Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
255Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
256Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
257Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
258Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
259Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
260Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
261AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
262Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
263Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
264Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
265Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
266Plasma-enhanced atomic layer deposition of vanadium nitride
267Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
268Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
269Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
270Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
271Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
272Nitride memristors
273Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
274Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
275Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
276Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
277Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
278Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
279Perspectives on future directions in III-N semiconductor research
280A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
281Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
282Plasma-enhanced atomic layer deposition of superconducting niobium nitride
283Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
284RF Characterization of Novel Superconducting Materials and Multilayers
285Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
286Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
287Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
288RF Characterization of Novel Superconducting Materials and Multilayers
289Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
290Plasma-enhanced atomic layer deposition of ruthenium metal on free-standing carbon nanotube forest for 3D flexible binder-less supercapacitor electrodes
291Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
292Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
293Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
294Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
295Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
296Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
297A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
298Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
299Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
300Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
301AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
302Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
303Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
304High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
305Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
306Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
307Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
308A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
309Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
310Fundamental beam studies of radical enhanced atomic layer deposition of TiN
311Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
312Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
313Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
314Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
315Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
316Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
317In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
318Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
319Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
320Nitride memristors
321Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
322Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
323Atomic layer epitaxy for quantum well nitride-based devices
324Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
325Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
326Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
327New materials for memristive switching
328Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
329Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
330Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
331Plasma enhanced atomic layer deposition of SiNx:H and SiO2
332Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
333Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
334The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
335The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
336Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
337Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
338Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
339Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
340Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
341Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
342Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
343Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
344Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride
345The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition