N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1The effects of plasma treatment on the thermal stability of HfO2 thin films
2Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
3AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
4Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
5Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
6Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
7Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
8Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
9Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
10Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
11Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
12Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
13Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
14Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
15Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
16Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
17Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
18Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
19Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
20Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
21Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
22Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
23Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
24Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
25Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
26In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
27Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
28Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
29High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
30Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride
31Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
32Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
33Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
34High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
35Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
36Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
37Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
38Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
39Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
40SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
41Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
42Silicon nanowire networks for multi-stage thermoelectric modules
43Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
44Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
45Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
46Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
47Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
48Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
49Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
50Perspectives on future directions in III-N semiconductor research
51Atomic Layer Deposition of the Solid Electrolyte LiPON
52Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
53ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
54Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
55Analysis of nitrogen species in titanium oxynitride ALD films
56Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
57Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
58Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
59Perspectives on future directions in III-N semiconductor research
60Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
61Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
62Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
63Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
64Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
65High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
66The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
67Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
68Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
69Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
70Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
71Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
72Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
73Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
74Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
75Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
76Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
77Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
78Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
79Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
80Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
81Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
82Plasma-enhanced atomic layer deposition of titanium vanadium nitride
83Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
84Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
85A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
86Atomic layer deposition of titanium nitride from TDMAT precursor
87Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
88Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
89Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
90Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
91Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
92In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
93Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
94Radical Enhanced Atomic Layer Deposition of Metals and Oxides
95Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
96Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
97Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
98TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
99Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
100Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
101Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
102Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
103Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
104PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
105Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
106Plasma-enhanced atomic layer deposition of tungsten nitride
107Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
108Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
109Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
110Microwave properties of superconducting atomic-layer deposited TiN films
111Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
112Sub-nanometer heating depth of atomic layer annealing
113Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
114Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
115Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
116Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
117Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
118Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
119Radical Enhanced Atomic Layer Deposition of Metals and Oxides
120Annealing behavior of ferroelectric Si-doped HfO2 thin films
121Nitride memristors
122Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
123Modal properties of a strip-loaded horizontal slot waveguide
124Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
125XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
126GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
127Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
128Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
129The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
130Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
131Plasma enhanced atomic layer deposition of SiNx:H and SiO2
132Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
133Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
134In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
135Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
136Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
137Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
138Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
139Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
140Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
141Perspectives on future directions in III-N semiconductor research
142Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
143Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
144Fundamental beam studies of radical enhanced atomic layer deposition of TiN
145Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
146Atmospheric pressure plasma enhanced spatial ALD of silver
147Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
148Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
149Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
150Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content
151Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
152ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
153Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
154In-gap states in titanium dioxide and oxynitride atomic layer deposited films
155In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
156Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
157Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
158Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
159Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
160AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
161Film Uniformity in Atomic Layer Deposition
162Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
163Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
164Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
165Plasma-enhanced atomic layer deposition of superconducting niobium nitride
166Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
167Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
168Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
169Gallium nitride thin films by microwave plasma-assisted ALD
170Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
171Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
172Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
173Trilayer Tunnel Selectors for Memristor Memory Cells
174Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
175Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
176Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
177A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
178Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
179Nitride memristors
180Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
181Nonvolatile Capacitive Crossbar Array for In-Memory Computing
182Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
183Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
184AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
185A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
186Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
187Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
188In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
189Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
190Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
191Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
192Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
193Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
194Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
195Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
196Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
197In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
198Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
199New materials for memristive switching
200Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
201Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
202A route to low temperature growth of single crystal GaN on sapphire
203Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
204In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
205Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
206The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
207Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
208Atomic layer epitaxy for quantum well nitride-based devices
209Performance of Samples with Novel SRF Materials and Growth Techniques
210Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
211Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
212Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
213Structural and optical characterization of low-temperature ALD crystalline AlN
214Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
215Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
216Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
217Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
218Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
219Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
220Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
221Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
222High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
223Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
224Atomic layer epitaxy for quantum well nitride-based devices
225Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
226Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
227Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
228Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
229Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
230Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
231Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
232Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
233Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
234Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
235Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
236Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
237AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
238PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
239Atomic Layer Deposition of Niobium Nitride from Different Precursors
240Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
241Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
242Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
243Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
244Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
245Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
246Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
247Perspectives on future directions in III-N semiconductor research
248Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
249Atomic layer epitaxy for quantum well nitride-based devices
250Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
251Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
252Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
253An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
254Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
255ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
256Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
257Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
258Fully CMOS-compatible titanium nitride nanoantennas
259Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
260Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
261Plasma-enhanced atomic layer deposition of vanadium nitride
262Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
263New materials for memristive switching
264Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
265Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
266Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
267Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
268Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
269Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
270Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
271Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
272Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
273Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
274Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
275Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
276AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
277Fabrication and deformation of three-dimensional hollow ceramic nanostructures
278ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
279Plasma-enhanced atomic layer deposition of titanium vanadium nitride
280The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
281Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
282Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
283Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
284Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
285Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
286Gadolinium nitride films deposited using a PEALD based process
287Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
288Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
289Atomic layer deposition of titanium nitride for quantum circuits
290AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
291The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
292Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
293Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
294Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
295Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
296Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
297Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
298Sub-10-nm ferroelectric Gd-doped HfO2 layers
299High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
300Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
301Plasma-enhanced atomic layer deposition of Co on metal surfaces
302Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
303Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
304Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
305Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
306Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
307Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
308Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
309Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
310Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
311Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
312Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
313Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
314Plasma-enhanced atomic layer deposition of titanium vanadium nitride
315AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
316The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
317Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
318Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
319Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
320Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
321Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
322Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
323Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
324Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
325Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
326A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
327Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
328Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
329Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
330Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
331Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
332Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
333Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
334Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
335Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
336Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
337Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
338Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs