N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
2Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
3Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
4Silicon nanowire networks for multi-stage thermoelectric modules
5Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
6Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
7SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
8Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
9Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
10Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
11Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
12Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
13Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
14Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
15Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
16Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
17Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
18Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
19Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
20Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
21Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
22Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
23Plasma enhanced atomic layer deposition of SiNx:H and SiO2
24Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
25Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
26Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
27Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
28Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
29Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
30Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
31Perspectives on future directions in III-N semiconductor research
32Trilayer Tunnel Selectors for Memristor Memory Cells
33Fabrication and deformation of three-dimensional hollow ceramic nanostructures
34Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
35Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
36New materials for memristive switching
37ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
38AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
39Gadolinium nitride films deposited using a PEALD based process
40Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
41Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
42Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
43Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
44Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
45Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
46Atmospheric pressure plasma enhanced spatial ALD of silver
47Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
48Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
49Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
50Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
51Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
52Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
53XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
54Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
55Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
56In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
57Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
58Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
59Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
60Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
61Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
62Perspectives on future directions in III-N semiconductor research
63PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
64Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
65Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
66Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
67Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
68Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
69Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
70Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
71High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
72Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
73Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
74Atomic Layer Deposition of the Solid Electrolyte LiPON
75High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
76Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
77Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
78Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
79Analysis of nitrogen species in titanium oxynitride ALD films
80Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
81Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
82Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
83Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
84Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
85Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
86Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
87Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
88Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
89Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
90Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
91Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
92Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
93Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
94Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
95The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
96ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
97Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
98The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
99Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
100AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
101Nitride memristors
102In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
103Atomic layer epitaxy for quantum well nitride-based devices
104Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
105A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
106Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
107Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
108Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
109Fundamental beam studies of radical enhanced atomic layer deposition of TiN
110Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
111Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
112Nonvolatile Capacitive Crossbar Array for In-Memory Computing
113Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
114Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
115Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
116Sub-nanometer heating depth of atomic layer annealing
117Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
118Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
119Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
120Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
121Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
122Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
123Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
124Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
125Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
126Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
127Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
128Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
129Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
130Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
131Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
132Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
133Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
134Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
135Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
136Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
137Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
138In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
139Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
140Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
141Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
142Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
143Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
144Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
145Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
146Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
147Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
148Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
149Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
150Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
151Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
152Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
153Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
154Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
155Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
156Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
157Plasma-enhanced atomic layer deposition of tungsten nitride
158Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
159Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
160Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
161Structural and optical characterization of low-temperature ALD crystalline AlN
162Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
163Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
164Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
165Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
166Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
167AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
168Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
169Performance of Samples with Novel SRF Materials and Growth Techniques
170Plasma-enhanced atomic layer deposition of titanium vanadium nitride
171Annealing behavior of ferroelectric Si-doped HfO2 thin films
172Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
173Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
174Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
175Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
176Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
177Plasma-enhanced atomic layer deposition of titanium vanadium nitride
178Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
179Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
180Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
181Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
182GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
183Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
184Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
185The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
186In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
187Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
188ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
189Perspectives on future directions in III-N semiconductor research
190Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
191Plasma-enhanced atomic layer deposition of superconducting niobium nitride
192Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
193Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
194Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
195Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
196Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
197Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
198A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
199Plasma-enhanced atomic layer deposition of Co on metal surfaces
200Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
201A route to low temperature growth of single crystal GaN on sapphire
202Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
203Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
204Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
205Radical Enhanced Atomic Layer Deposition of Metals and Oxides
206Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
207Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
208Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
209Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
210Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
211Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
212Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
213Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
214Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
215Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
216Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
217A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
218Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
219Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
220PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
221Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
222Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
223Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
224Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
225Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
226Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
227Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
228Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
229Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
230Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
231Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
232Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
233Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
234The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
235Fully CMOS-compatible titanium nitride nanoantennas
236Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content
237Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
238Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
239TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
240Atomic layer deposition of titanium nitride for quantum circuits
241Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
242Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
243Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
244Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
245Atomic layer deposition of titanium nitride from TDMAT precursor
246Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
247Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
248In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
249Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
250Atomic Layer Deposition of Niobium Nitride from Different Precursors
251Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
252Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
253Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
254Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
255Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
256Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
257Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
258Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
259Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
260In-gap states in titanium dioxide and oxynitride atomic layer deposited films
261Nitride memristors
262Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
263Atomic layer epitaxy for quantum well nitride-based devices
264High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
265Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
266High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
267Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
268Modal properties of a strip-loaded horizontal slot waveguide
269An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
270Microwave properties of superconducting atomic-layer deposited TiN films
271ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
272Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
273Film Uniformity in Atomic Layer Deposition
274The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
275Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
276Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
277Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
278Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
279Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
280Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
281In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
282Sub-10-nm ferroelectric Gd-doped HfO2 layers
283Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
284Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
285The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
286Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
287Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
288Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
289The effects of plasma treatment on the thermal stability of HfO2 thin films
290Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
291Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
292Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
293AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
294Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
295Atomic layer epitaxy for quantum well nitride-based devices
296Gallium nitride thin films by microwave plasma-assisted ALD
297AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
298Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
299Perspectives on future directions in III-N semiconductor research
300Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
301Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
302Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
303Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
304Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
305Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
306A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
307Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
308AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
309Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
310Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
311Plasma-enhanced atomic layer deposition of vanadium nitride
312Radical Enhanced Atomic Layer Deposition of Metals and Oxides
313Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
314Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
315Plasma-enhanced atomic layer deposition of titanium vanadium nitride
316Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
317Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
318Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
319High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
320New materials for memristive switching
321Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
322Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
323Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
324Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
325Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
326Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
327Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
328Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
329In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
330Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
331Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
332Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
333Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
334Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
335Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
336AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
337Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes