N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
2Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
3Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
4Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
5Sub-nanometer heating depth of atomic layer annealing
6Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
7Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
8Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
9Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
10Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
11Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
12Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
13Atmospheric pressure plasma enhanced spatial ALD of silver
14The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
15Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
16Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
17Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
18Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
19Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
20Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
21Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
22Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
23Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
24Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
25Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
26Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
27Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
28Sub-10-nm ferroelectric Gd-doped HfO2 layers
29Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
30Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
31Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
32The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
33Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
34Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
35Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
36Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
37Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
38Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
39AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
40AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
41Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
42Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
43Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
44Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
45Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
46Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
47Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
48Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
49Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
50Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
51Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
52Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
53Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
54Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
55Atomic layer epitaxy for quantum well nitride-based devices
56Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
57Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
58Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
59Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
60Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
61Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
62Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
63Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
64Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
65Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
66Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
67Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
68Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
69Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
70A route to low temperature growth of single crystal GaN on sapphire
71Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
72Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
73Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
74Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
75Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
76Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
77Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
78Plasma-enhanced atomic layer deposition of superconducting niobium nitride
79Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
80Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
81Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
82Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
83Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
84Atomic layer deposition of titanium nitride for quantum circuits
85XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
86Plasma-enhanced atomic layer deposition of tungsten nitride
87Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
88A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
89An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
90SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
91Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
92Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
93Atomic Layer Deposition of Niobium Nitride from Different Precursors
94Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
95Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
96Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
97In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
98Analysis of nitrogen species in titanium oxynitride ALD films
99Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
100Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
101Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
102Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
103Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
104Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
105Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
106Atomic Layer Deposition of the Solid Electrolyte LiPON
107Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
108Film Uniformity in Atomic Layer Deposition
109Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
110Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
111Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
112Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
113Plasma enhanced atomic layer deposition of SiNx:H and SiO2
114Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
115Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
116Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
117Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
118Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
119High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
120TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
121Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
122GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
123New materials for memristive switching
124Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
125Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
126Structural and optical characterization of low-temperature ALD crystalline AlN
127The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
128Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
129Modal properties of a strip-loaded horizontal slot waveguide
130The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
131Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
132Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
133In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
134Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
135Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
136Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
137Plasma-enhanced atomic layer deposition of vanadium nitride
138Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
139Gadolinium nitride films deposited using a PEALD based process
140Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
141AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
142Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
143Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
144Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
145AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
146High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
147Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
148Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
149Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
150Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
151Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
152ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
153Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
154Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
155Radical Enhanced Atomic Layer Deposition of Metals and Oxides
156Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
157Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
158Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
159Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
160Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
161Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
162Silicon nanowire networks for multi-stage thermoelectric modules
163Perspectives on future directions in III-N semiconductor research
164Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
165Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
166Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
167Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
168Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
169Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
170Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
171Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
172Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
173High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
174Atomic layer epitaxy for quantum well nitride-based devices
175Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
176Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
177Plasma-enhanced atomic layer deposition of titanium vanadium nitride
178Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
179New materials for memristive switching
180Plasma-enhanced atomic layer deposition of titanium vanadium nitride
181Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
182AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
183A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
184Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
185Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
186Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
187Perspectives on future directions in III-N semiconductor research
188Atomic layer epitaxy for quantum well nitride-based devices
189Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
190Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
191Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
192Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
193Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
194Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
195Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
196ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
197Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
198Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
199Perspectives on future directions in III-N semiconductor research
200Annealing behavior of ferroelectric Si-doped HfO2 thin films
201Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
202High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
203AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
204Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
205Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
206Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
207Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
208Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
209Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
210Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
211Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
212Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
213Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
214Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
215Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
216Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
217Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
218A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
219Perspectives on future directions in III-N semiconductor research
220Nitride memristors
221Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
222Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
223Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
224Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
225PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
226The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
227Microwave properties of superconducting atomic-layer deposited TiN films
228Fabrication and deformation of three-dimensional hollow ceramic nanostructures
229Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
230Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
231Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
232Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
233Nitride memristors
234Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
235PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
236Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
237Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
238Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
239Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
240Performance of Samples with Novel SRF Materials and Growth Techniques
241Gallium nitride thin films by microwave plasma-assisted ALD
242Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
243Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
244Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
245Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
246Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
247Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
248Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
249The effects of plasma treatment on the thermal stability of HfO2 thin films
250Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
251Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
252Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
253ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
254Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
255Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
256Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
257Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
258In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
259Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
260Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
261Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
262Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
263Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
264Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
265Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
266Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
267Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
268Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
269In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
270Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
271Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
272Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
273Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
274Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
275Plasma-enhanced atomic layer deposition of titanium vanadium nitride
276Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
277Plasma-enhanced atomic layer deposition of Co on metal surfaces
278Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
279Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
280Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
281Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
282In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
283Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
284Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
285Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
286In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
287Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
288Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
289Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
290Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
291Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
292Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
293Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
294Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
295Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
296ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
297Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
298Fundamental beam studies of radical enhanced atomic layer deposition of TiN
299Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
300Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
301Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
302Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
303Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
304Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
305Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
306Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
307Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
308Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
309AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
310Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
311Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
312Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
313Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
314Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
315Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
316Fully CMOS-compatible titanium nitride nanoantennas
317Trilayer Tunnel Selectors for Memristor Memory Cells
318Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
319A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
320Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
321Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
322Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
323Atomic layer deposition of titanium nitride from TDMAT precursor
324High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
325Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
326Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
327Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
328Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
329Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
330In-gap states in titanium dioxide and oxynitride atomic layer deposited films
331Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
332Radical Enhanced Atomic Layer Deposition of Metals and Oxides
333In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment