Nitrogen, N2, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 253 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atmospheric pressure plasma enhanced spatial ALD of silver
2AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
3AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
4Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
5Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
6Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
7Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
8Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
9Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
10Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
11Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
12Atomic layer epitaxy for quantum well nitride-based devices
13Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
14Perspectives on future directions in III-N semiconductor research
15ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
16AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
17AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
18Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
19Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
20Atomic layer epitaxy for quantum well nitride-based devices
21Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
22Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
23Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
24Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
25Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
26Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
27Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
28Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
29Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
30Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
31GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
32Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
33Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
34Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
35Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
36Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
37High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
38High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
39Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
40Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
41Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
42Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
43Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
44Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
45Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
46Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
47Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
48Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
49New materials for memristive switching
50Nitride memristors
51Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
52PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
53Perspectives on future directions in III-N semiconductor research
54Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
55Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
56Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
57Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
58Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
59Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
60Radical Enhanced Atomic Layer Deposition of Metals and Oxides
61Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
62Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
63Structural and optical characterization of low-temperature ALD crystalline AlN
64The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
65Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
66XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
67Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
68Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
69Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
70Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
71Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
72Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
73Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
74Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
75Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
76Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
77Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
78Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
79Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
80Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
81Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
82Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
83Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
84Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
85A route to low temperature growth of single crystal GaN on sapphire
86Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
87Demonstration of flexible thin film transistors with GaN channels
88Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
89Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
90Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
91Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
92Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
93Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
94Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
95Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
96Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
97Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
98Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
99Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
100Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
101Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
102Perspectives on future directions in III-N semiconductor research
103Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
104Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
105Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
106Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
107Gadolinium nitride films deposited using a PEALD based process
108Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
109Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
110Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
111An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
112Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
113Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
114Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
115Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
116Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
117Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
118Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
119Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
120Atomic layer epitaxy for quantum well nitride-based devices
121Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
122Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
123Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
124Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
125Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
126Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
127Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
128Perspectives on future directions in III-N semiconductor research
129Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
130Atomic Layer Deposition of the Solid Electrolyte LiPON
131Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
132Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
133Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
134Atomic Layer Deposition of Niobium Nitride from Different Precursors
135Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
136Plasma-enhanced atomic layer deposition of superconducting niobium nitride
137Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
138Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
139Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
140Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
141Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
142Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
143Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
144Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
145Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
146In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
147Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
148Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
149Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
150Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
151Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
152Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
153Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
154Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
155Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
156Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
157Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
158Plasma enhanced atomic layer deposition of SiNx:H and SiO2
159Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
160Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
161Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
162Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
163Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
164Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
165Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
166Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
167Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
168Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
169Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
170Modal properties of a strip-loaded horizontal slot waveguide
171Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
172Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
173Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
174Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
175Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
176Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
177Trilayer Tunnel Selectors for Memristor Memory Cells
178Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
179Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
180Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
181ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
182ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
183Annealing behavior of ferroelectric Si-doped HfO2 thin films
184Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
185Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
186Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
187Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
188Atomic layer deposition of titanium nitride for quantum circuits
189Atomic layer deposition of titanium nitride from TDMAT precursor
190Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
191Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
192Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
193Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
194Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
195Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
196Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
197Fabrication and deformation of three-dimensional hollow ceramic nanostructures
198Fully CMOS-compatible titanium nitride nanoantennas
199High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
200Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
201Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
202Microwave properties of superconducting atomic-layer deposited TiN films
203New materials for memristive switching
204Nitride memristors
205Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
206Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
207Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
208Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
209Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
210Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
211Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
212Plasma-enhanced atomic layer deposition of titanium vanadium nitride
213Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
214Radical Enhanced Atomic Layer Deposition of Metals and Oxides
215Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
216Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
217Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
218Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
219Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
220Silicon nanowire networks for multi-stage thermoelectric modules
221Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
222Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
223Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
224Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
225TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
226In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
227Analysis of nitrogen species in titanium oxynitride ALD films
228Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
229Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
230In-gap states in titanium dioxide and oxynitride atomic layer deposited films
231Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
232Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
233Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
234Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
235Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
236Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
237Plasma-enhanced atomic layer deposition of titanium vanadium nitride
238Plasma-enhanced atomic layer deposition of titanium vanadium nitride
239A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
240Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
241Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
242Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
243A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
244Plasma-enhanced atomic layer deposition of tungsten nitride
245Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
246AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
247Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
248Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
249Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
250Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
251Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
252Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
253Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation


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