Nitrogen, N2, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 246 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atmospheric pressure plasma enhanced spatial ALD of silver
2AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
3AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
4Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
5Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
6Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
7Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
8Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
9Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
10Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
11Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
12Atomic layer epitaxy for quantum well nitride-based devices
13Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
14Perspectives on future directions in III-N semiconductor research
15ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
16AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
17AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
18Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
19Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
20Atomic layer epitaxy for quantum well nitride-based devices
21Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
22Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
23Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
24Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
25Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
26Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
27Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
28Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
29Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
30GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
31Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
32Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
33Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
34Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
35Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
36High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
37High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
38Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
39Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
40Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
41Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
42Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
43Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
44Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
45Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
46Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
47Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
48New materials for memristive switching
49Nitride memristors
50Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
51PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
52Perspectives on future directions in III-N semiconductor research
53Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
54Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
55Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
56Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
57Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
58Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
59Radical Enhanced Atomic Layer Deposition of Metals and Oxides
60Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
61Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
62Structural and optical characterization of low-temperature ALD crystalline AlN
63The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
64Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
65XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
66Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
67Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
68Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
69Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
70Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
71Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
72Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
73Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
74Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
75Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
76Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
77Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
78Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
79Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
80Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
81Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
82Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
83Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
84A route to low temperature growth of single crystal GaN on sapphire
85Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
86Demonstration of flexible thin film transistors with GaN channels
87Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
88Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
89Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
90Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
91Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
92Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
93Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
94Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
95Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
96Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
97Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
98Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
99Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
100Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
101Perspectives on future directions in III-N semiconductor research
102Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
103Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
104Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
105Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
106Gadolinium nitride films deposited using a PEALD based process
107Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
108Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
109Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
110An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
111Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
112Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
113Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
114Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
115Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
116Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
117Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
118Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
119Atomic layer epitaxy for quantum well nitride-based devices
120Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
121Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
122Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
123Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
124Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
125Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
126Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
127Perspectives on future directions in III-N semiconductor research
128Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
129Atomic Layer Deposition of the Solid Electrolyte LiPON
130Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
131Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
132Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
133Atomic Layer Deposition of Niobium Nitride from Different Precursors
134Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
135Plasma-enhanced atomic layer deposition of superconducting niobium nitride
136Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
137Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
138Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
139Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
140Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
141Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
142Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
143Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
144Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
145In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
146Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
147Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
148Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
149Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
150Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
151Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
152Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
153Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
154Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
155Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
156Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
157Plasma enhanced atomic layer deposition of SiNx:H and SiO2
158Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
159Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
160Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
161Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
162Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
163Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
164Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
165Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
166Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
167Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
168Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
169Modal properties of a strip-loaded horizontal slot waveguide
170Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
171Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
172Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
173Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
174Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
175Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
176Trilayer Tunnel Selectors for Memristor Memory Cells
177Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
178Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
179Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
180ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
181ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
182Annealing behavior of ferroelectric Si-doped HfO2 thin films
183Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
184Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
185Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
186Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
187Atomic layer deposition of titanium nitride from TDMAT precursor
188Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
189Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
190Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
191Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
192Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
193Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
194Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
195Fabrication and deformation of three-dimensional hollow ceramic nanostructures
196Fully CMOS-compatible titanium nitride nanoantennas
197High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
198Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
199Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
200Microwave properties of superconducting atomic-layer deposited TiN films
201New materials for memristive switching
202Nitride memristors
203Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
204Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
205Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
206Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
207Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
208Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
209Plasma-enhanced atomic layer deposition of titanium vanadium nitride
210Radical Enhanced Atomic Layer Deposition of Metals and Oxides
211Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
212Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
213Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
214Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
215Silicon nanowire networks for multi-stage thermoelectric modules
216Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
217Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
218Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
219Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
220TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
221In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
222Analysis of nitrogen species in titanium oxynitride ALD films
223Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
224Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
225In-gap states in titanium dioxide and oxynitride atomic layer deposited films
226Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
227Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
228Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
229Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
230Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
231Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
232Plasma-enhanced atomic layer deposition of titanium vanadium nitride
233Plasma-enhanced atomic layer deposition of titanium vanadium nitride
234A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
235Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
236Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
237Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
238A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
239Plasma-enhanced atomic layer deposition of tungsten nitride
240AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
241Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
242Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
243Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
244Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
245Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
246Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation


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