N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
2Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
3The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
4In-gap states in titanium dioxide and oxynitride atomic layer deposited films
5Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
6Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
7AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
8Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
9Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
10Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
11Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
12Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
13RF Characterization of Novel Superconducting Materials and Multilayers
14Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
15Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
16Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
17Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
18Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
19Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
20In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
21Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
22Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
23Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
24Plasma-enhanced atomic layer deposition of tungsten nitride
25Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
26Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
27Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
28ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
29Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
30Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
31Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
32The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
33Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
34Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
35Perspectives on future directions in III-N semiconductor research
36An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
37Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
38Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
39Atomic layer epitaxy for quantum well nitride-based devices
40Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
41Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
42PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
43Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
44The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
45Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
46Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
47Gadolinium nitride films deposited using a PEALD based process
48Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
49Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
50Radical Enhanced Atomic Layer Deposition of Metals and Oxides
51Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
52Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
53A route to low temperature growth of single crystal GaN on sapphire
54Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
55Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
56Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
57A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
58Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
59Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
60Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
61Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
62Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
63Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content
64Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
65Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
66Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
67Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
68Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
69Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
70Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
71Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
72Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
73Atomic layer deposition of titanium nitride for quantum circuits
74Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
75Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
76Perspectives on future directions in III-N semiconductor research
77Gallium nitride thin films by microwave plasma-assisted ALD
78Modal properties of a strip-loaded horizontal slot waveguide
79Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
80Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
81Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
82Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
83Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
84Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
85Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
86Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
87Atomic Layer Deposition of Niobium Nitride from Different Precursors
88Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
89Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
90Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
91Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
92Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
93Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
94In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
95Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
96Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
97Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
98Plasma-enhanced atomic layer deposition of Co on metal surfaces
99Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
100Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
101Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
102Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
103Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
104Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
105High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
106Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
107Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
108Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
109The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
110Annealing behavior of ferroelectric Si-doped HfO2 thin films
111Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
112Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
113Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
114Performance of Samples with Novel SRF Materials and Growth Techniques
115Plasma-enhanced atomic layer deposition of titanium vanadium nitride
116Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
117Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
118Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
119Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
120Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
121Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
122Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
123Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
124Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
125AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
126Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
127Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
128Sub-10-nm ferroelectric Gd-doped HfO2 layers
129Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
130Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
131Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
132Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
133Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
134Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
135Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
136Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
137Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
138Nitride memristors
139Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
140AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
141Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
142Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
143AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
144Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
145Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
146Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
147High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
148Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
149Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
150Radical Enhanced Atomic Layer Deposition of Metals and Oxides
151Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
152New materials for memristive switching
153Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
154ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
155Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
156Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
157Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
158Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
159Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
160Plasma-enhanced atomic layer deposition of ruthenium metal on free-standing carbon nanotube forest for 3D flexible binder-less supercapacitor electrodes
161Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
162Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
163Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
164Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
165Sub-nanometer heating depth of atomic layer annealing
166Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
167Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
168Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
169Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
170Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
171Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
172Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
173Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
174Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
175Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
176TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
177XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
178Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
179Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
180Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
181Trilayer Tunnel Selectors for Memristor Memory Cells
182Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
183The effects of plasma treatment on the thermal stability of HfO2 thin films
184Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
185Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
186Fully CMOS-compatible titanium nitride nanoantennas
187Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
188Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
189Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
190Plasma-enhanced atomic layer deposition of titanium vanadium nitride
191Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
192Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
193Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
194Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
195Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
196Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
197Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
198Nonvolatile Capacitive Crossbar Array for In-Memory Computing
199AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
200Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
201Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
202Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
203Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
204Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
205Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
206Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
207Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
208Analysis of nitrogen species in titanium oxynitride ALD films
209High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
210Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
211Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
212Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
213Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
214Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
215Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
216The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
217Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
218AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
219Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
220In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
221Atomic layer epitaxy for quantum well nitride-based devices
222Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
223Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
224Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
225Atomic layer deposition of titanium nitride from TDMAT precursor
226Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
227Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
228Plasma-enhanced atomic layer deposition of titanium vanadium nitride
229Fundamental beam studies of radical enhanced atomic layer deposition of TiN
230In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
231Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
232High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
233Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
234Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
235Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
236Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
237Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
238Atomic layer epitaxy for quantum well nitride-based devices
239New materials for memristive switching
240Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
241Plasma-enhanced atomic layer deposition of superconducting niobium nitride
242GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
243Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
244Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
245Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
246Fabrication and deformation of three-dimensional hollow ceramic nanostructures
247Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
248A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
249Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
250Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
251Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
252Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
253Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
254Plasma enhanced atomic layer deposition of SiNx:H and SiO2
255In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
256Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
257Atomic Layer Deposition of the Solid Electrolyte LiPON
258Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
259Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
260Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
261The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
262Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
263Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
264Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
265Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
266Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
267Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
268Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
269Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
270Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
271Nitride memristors
272A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
273Perspectives on future directions in III-N semiconductor research
274Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
275Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
276Atmospheric pressure plasma enhanced spatial ALD of silver
277Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
278Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
279Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
280Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
281Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
282Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
283Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
284Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
285Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
286ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
287In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
288Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
289Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
290AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
291Microwave properties of superconducting atomic-layer deposited TiN films
292Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
293Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
294Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
295Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
296Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
297Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
298Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
299Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
300Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
301Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
302PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
303Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
304Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
305Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
306Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
307Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
308Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
309Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
310Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
311Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
312Silicon nanowire networks for multi-stage thermoelectric modules
313SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
314Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
315Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
316Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
317Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
318Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
319A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
320Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
321Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
322Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
323Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
324ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
325Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride
326Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
327Perspectives on future directions in III-N semiconductor research
328In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
329Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
330Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
331Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
332Film Uniformity in Atomic Layer Deposition
333Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
334Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
335Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
336Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
337Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
338Plasma-enhanced atomic layer deposition of vanadium nitride
339Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
340Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
341Structural and optical characterization of low-temperature ALD crystalline AlN
342RF Characterization of Novel Superconducting Materials and Multilayers
343High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
344Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
345Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter