N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 290 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atmospheric pressure plasma enhanced spatial ALD of silver
2AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
3AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
4Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
5Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
6Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
7In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
8Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
9Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
10Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
11Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
12Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
13Atomic layer epitaxy for quantum well nitride-based devices
14Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
15Perspectives on future directions in III-N semiconductor research
16ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
17AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
18AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
19Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
20Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
21Atomic layer epitaxy for quantum well nitride-based devices
22Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
23Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
24Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
25Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
26Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
27Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
28Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
29Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
30Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
31Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
32Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
33GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
34Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
35Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
36Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
37Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
38Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
39High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
40High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
41Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
42Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
43Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
44Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
45Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
46Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
47Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
48Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
49Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
50Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
51New materials for memristive switching
52Nitride memristors
53Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
54PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
55Perspectives on future directions in III-N semiconductor research
56Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
57Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
58Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
59Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
60Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
61Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
62Radical Enhanced Atomic Layer Deposition of Metals and Oxides
63Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow-cathode plasma-assisted atomic layer deposition
64Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
65Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
66Structural and optical characterization of low-temperature ALD crystalline AlN
67The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
68Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
69XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
70Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
71Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
72Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
73Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
74Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
75Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
76Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
77Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
78Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
79Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
80Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
81Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
82Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
83Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
84Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
85Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
86Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
87Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
88Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
89A route to low temperature growth of single crystal GaN on sapphire
90Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
91Demonstration of flexible thin film transistors with GaN channels
92Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
93Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
94Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
95Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
96Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
97Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
98Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
99Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
100Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
101Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
102Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
103Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
104Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
105Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
106Perspectives on future directions in III-N semiconductor research
107Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
108Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
109Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
110Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
111Gadolinium nitride films deposited using a PEALD based process
112Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
113Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
114Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
115Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
116An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
117Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
118Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
119Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
120Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
121Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
122Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
123Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
124Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
125Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
126Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
127Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
128Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
129Atomic layer epitaxy for quantum well nitride-based devices
130Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
131Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
132Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
133Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
134Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
135Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
136Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
137Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
138Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
139Perspectives on future directions in III-N semiconductor research
140Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
141Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
142Atomic Layer Deposition of the Solid Electrolyte LiPON
143Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
144Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
145Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
146Atomic Layer Deposition of Niobium Nitride from Different Precursors
147Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
148Plasma-enhanced atomic layer deposition of superconducting niobium nitride
149Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
150Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
151Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
152Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
153Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
154In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
155Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
156Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
157Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
158Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
159In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
160Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
161Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
162Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
163Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
164Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
165Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
166Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
167Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
168Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
169Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
170Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
171Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
172Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
173Plasma enhanced atomic layer deposition of SiNx:H and SiO2
174Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
175Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
176Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
177Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
178Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
179Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
180Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
181Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
182Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
183Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
184Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
185Modal properties of a strip-loaded horizontal slot waveguide
186Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
187Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
188Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
189Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
190Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
191Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
192Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
193Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
194Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
195Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
196Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
197The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
198The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
199Trilayer Tunnel Selectors for Memristor Memory Cells
200Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
201Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
202Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
203Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
204ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
205ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
206Annealing behavior of ferroelectric Si-doped HfO2 thin films
207Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
208Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
209Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
210Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
211Atomic layer deposition of titanium nitride for quantum circuits
212Atomic layer deposition of titanium nitride from TDMAT precursor
213Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
214Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
215Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
216Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
217Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
218Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
219Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
220Fabrication and deformation of three-dimensional hollow ceramic nanostructures
221Film Uniformity in Atomic Layer Deposition
222Fully CMOS-compatible titanium nitride nanoantennas
223Fundamental beam studies of radical enhanced atomic layer deposition of TiN
224Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
225High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
226In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
227In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
228Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
229Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
230Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
231Microwave properties of superconducting atomic-layer deposited TiN films
232New materials for memristive switching
233Nitride memristors
234Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
235Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
236Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
237Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
238Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
239Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
240Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
241Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
242Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
243Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
244Plasma-enhanced atomic layer deposition of titanium vanadium nitride
245Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
246Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
247Radical Enhanced Atomic Layer Deposition of Metals and Oxides
248Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
249Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
250Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
251Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
252Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
253Silicon nanowire networks for multi-stage thermoelectric modules
254Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
255Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
256Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
257Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
258TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
259Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
260In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
261Analysis of nitrogen species in titanium oxynitride ALD films
262Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
263Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
264In-gap states in titanium dioxide and oxynitride atomic layer deposited films
265Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
266Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
267Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
268Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
269Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
270Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
271Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
272Plasma-enhanced atomic layer deposition of titanium vanadium nitride
273Plasma-enhanced atomic layer deposition of titanium vanadium nitride
274A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
275Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
276Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
277Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
278A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
279Plasma-enhanced atomic layer deposition of tungsten nitride
280Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
281Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
282AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
283Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
284Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
285Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
286Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
287Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
288PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
289Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
290Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation


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