N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 342 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atmospheric pressure plasma enhanced spatial ALD of silver
2AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
3AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
4Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
5Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
6Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
7In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
8Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
9Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
10Atomic layer epitaxy for quantum well nitride-based devices
11Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
12Perspectives on future directions in III-N semiconductor research
13A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
14A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
15ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
16AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
17AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
18AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
19Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
20Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
21Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
22Atomic layer epitaxy for quantum well nitride-based devices
23Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
24Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
25Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
26Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
27Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
28Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
29Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
30Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
31Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
32Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
33Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
34GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
35Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
36Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
37Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
38Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
39Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
40High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
41High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
42Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
43Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
44Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
45Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
46Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
47Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
48Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
49New materials for memristive switching
50Nitride memristors
51PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
52Perspectives on future directions in III-N semiconductor research
53Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
54Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
55Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
56Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
57Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
58Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
59Radical Enhanced Atomic Layer Deposition of Metals and Oxides
60Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
61Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
62Structural and optical characterization of low-temperature ALD crystalline AlN
63Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
64The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
65Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
66Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
67XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
68Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
69Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
70Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
71Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
72Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
73Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
74Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
75Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
76Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
77Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
78Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
79Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
80Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
81Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
82Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
83Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
84Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
85Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
86A route to low temperature growth of single crystal GaN on sapphire
87Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
88Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
89Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
90Perspectives on future directions in III-N semiconductor research
91Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
92Gadolinium nitride films deposited using a PEALD based process
93Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
94Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
95Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
96Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
97An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
98Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
99Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
100The effects of plasma treatment on the thermal stability of HfO2 thin films
101Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
102Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
103Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
104Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
105The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
106Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
107Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
108Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
109Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
110Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
111Atomic layer epitaxy for quantum well nitride-based devices
112Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
113Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
114Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
115Perspectives on future directions in III-N semiconductor research
116Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
117The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
118Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
119Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
120Atomic Layer Deposition of the Solid Electrolyte LiPON
121Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
122Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
123Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
124Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
125Atomic Layer Deposition of Niobium Nitride from Different Precursors
126Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
127Plasma-enhanced atomic layer deposition of superconducting niobium nitride
128Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
129Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
130Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
131Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
132Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
133Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
134In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
135Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
136Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
137Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
138Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
139Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
140Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
141In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
142Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
143Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
144Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
145Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
146SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
147Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
148Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
149Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
150Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
151Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
152Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
153Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
154High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
155Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
156Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
157Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
158Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
159Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
160Plasma enhanced atomic layer deposition of SiNx:H and SiO2
161Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
162Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
163Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
164Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
165Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
166Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
167Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
168Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
169Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
170Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
171Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
172Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
173Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
174Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
175Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
176Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
177Modal properties of a strip-loaded horizontal slot waveguide
178Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
179Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
180Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
181Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
182Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
183Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
184High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
185Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
186Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
187Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
188Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
189Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
190The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
191The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
192Trilayer Tunnel Selectors for Memristor Memory Cells
193Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
194Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
195Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
196Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
197ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
198ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
199ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
200Annealing behavior of ferroelectric Si-doped HfO2 thin films
201Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
202Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
203Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
204Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
205Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
206Atomic layer deposition of titanium nitride for quantum circuits
207Atomic layer deposition of titanium nitride from TDMAT precursor
208Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
209Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
210Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
211Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
212Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
213Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
214Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
215Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
216Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
217Fabrication and deformation of three-dimensional hollow ceramic nanostructures
218Film Uniformity in Atomic Layer Deposition
219Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
220Fully CMOS-compatible titanium nitride nanoantennas
221Fundamental beam studies of radical enhanced atomic layer deposition of TiN
222Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
223High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
224In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
225In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
226Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
227Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
228Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
229Microwave properties of superconducting atomic-layer deposited TiN films
230New materials for memristive switching
231Nitride memristors
232Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
233Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
234Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
235Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
236Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
237Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
238Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
239Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
240Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
241Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
242Plasma-enhanced atomic layer deposition of titanium vanadium nitride
243Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
244Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
245Radical Enhanced Atomic Layer Deposition of Metals and Oxides
246Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
247Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
248Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
249Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
250Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
251Silicon nanowire networks for multi-stage thermoelectric modules
252Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
253Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
254Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
255Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
256TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
257Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
258Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
259Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
260In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
261Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
262Analysis of nitrogen species in titanium oxynitride ALD films
263Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
264Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
265In-gap states in titanium dioxide and oxynitride atomic layer deposited films
266Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
267Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
268Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
269Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
270Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
271Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
272Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
273Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
274Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
275Plasma-enhanced atomic layer deposition of titanium vanadium nitride
276Plasma-enhanced atomic layer deposition of titanium vanadium nitride
277Plasma-enhanced atomic layer deposition of vanadium nitride
278A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
279Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
280Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
281Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
282A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
283Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
284Plasma-enhanced atomic layer deposition of tungsten nitride
285Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
286Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
287AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
288Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
289Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
290Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
291Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
292Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
293PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
294Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
295Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation