N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
2Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
3Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
4Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
5Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
6Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
7Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
8Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
9Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
10Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
11Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
12The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
13Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
14Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
15Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
16Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
17Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
18Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
19Atmospheric pressure plasma enhanced spatial ALD of silver
20GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
21Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
22High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
23In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
24Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
25Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
26Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
27Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
28Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
29Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
30Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
31Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
32Analysis of nitrogen species in titanium oxynitride ALD films
33Microwave properties of superconducting atomic-layer deposited TiN films
34Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
35Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
36Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
37Plasma-enhanced atomic layer deposition of tungsten nitride
38Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
39Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
40Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
41Atomic layer epitaxy for quantum well nitride-based devices
42Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
43Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
44Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
45Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
46Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
47Atomic layer epitaxy for quantum well nitride-based devices
48Atomic layer epitaxy for quantum well nitride-based devices
49Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
50Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
51Modal properties of a strip-loaded horizontal slot waveguide
52Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
53A route to low temperature growth of single crystal GaN on sapphire
54Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
55Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
56Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
57Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
58Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
59Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
60Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
61A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
62Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
63Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
64Perspectives on future directions in III-N semiconductor research
65Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
66ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
67Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
68The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
69Gadolinium nitride films deposited using a PEALD based process
70Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
71Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
72Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
73Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
74Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
75Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
76Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
77Plasma-enhanced atomic layer deposition of vanadium nitride
78TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
79Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
80High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
81Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
82Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
83Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
84Plasma-enhanced atomic layer deposition of superconducting niobium nitride
85Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
86Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
87The effects of plasma treatment on the thermal stability of HfO2 thin films
88Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
89Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
90Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
91Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
92Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
93An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
94Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
95Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
96Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
97Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
98Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
99Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
100Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
101Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
102Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
103Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
104Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
105Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
106Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
107Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
108Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
109New materials for memristive switching
110Sub-nanometer heating depth of atomic layer annealing
111In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
112Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
113Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
114Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
115Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
116Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
117Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
118Perspectives on future directions in III-N semiconductor research
119Trilayer Tunnel Selectors for Memristor Memory Cells
120Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
121Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
122Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
123New materials for memristive switching
124Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
125Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
126Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
127Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
128XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
129Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
130Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
131Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
132Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
133Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
134The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
135Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
136Atomic Layer Deposition of the Solid Electrolyte LiPON
137Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
138Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
139Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
140SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
141Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
142Plasma-enhanced atomic layer deposition of titanium vanadium nitride
143Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
144Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
145Plasma-enhanced atomic layer deposition of titanium vanadium nitride
146Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
147Atomic layer deposition of titanium nitride for quantum circuits
148Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
149Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
150Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
151The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
152Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
153Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
154Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
155Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
156Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
157Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
158Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
159Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
160PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
161AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
162Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
163Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
164Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
165Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
166Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
167Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
168Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
169Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
170Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
171Atomic layer deposition of titanium nitride from TDMAT precursor
172Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
173Nitride memristors
174Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
175Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
176Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
177Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
178ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
179Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
180Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
181Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
182Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
183Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
184Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
185Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
186High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
187Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
188Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
189Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
190Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
191Performance of Samples with Novel SRF Materials and Growth Techniques
192Plasma-enhanced atomic layer deposition of titanium vanadium nitride
193In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
194Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
195Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
196Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
197Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
198Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
199Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
200Fully CMOS-compatible titanium nitride nanoantennas
201Plasma enhanced atomic layer deposition of SiNx:H and SiO2
202Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
203PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
204Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
205Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
206Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
207Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
208Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
209Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
210Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
211Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
212Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
213Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
214Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
215Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
216Annealing behavior of ferroelectric Si-doped HfO2 thin films
217Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
218AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
219AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
220Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
221High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
222Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
223Perspectives on future directions in III-N semiconductor research
224Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
225ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
226AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
227Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
228Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
229Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
230Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
231Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
232Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
233Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
234Plasma-enhanced atomic layer deposition of Co on metal surfaces
235In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
236Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
237Fundamental beam studies of radical enhanced atomic layer deposition of TiN
238Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
239Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
240Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
241Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
242Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
243Film Uniformity in Atomic Layer Deposition
244Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
245Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
246Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
247Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
248Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
249Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
250Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
251Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
252A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
253A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
254Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
255Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
256The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
257In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
258Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
259Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
260Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
261Fabrication and deformation of three-dimensional hollow ceramic nanostructures
262Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
263Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
264Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
265Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
266Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
267Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
268Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
269Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
270Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
271Structural and optical characterization of low-temperature ALD crystalline AlN
272Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
273Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
274Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
275Nitride memristors
276Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
277Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
278ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
279The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
280Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
281Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
282Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
283Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
284High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
285Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
286Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
287Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
288Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
289Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
290Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
291Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
292Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
293Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
294Radical Enhanced Atomic Layer Deposition of Metals and Oxides
295Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
296AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
297Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
298Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
299Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
300Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
301Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
302In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
303Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
304A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
305Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
306Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
307Radical Enhanced Atomic Layer Deposition of Metals and Oxides
308Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
309Atomic Layer Deposition of Niobium Nitride from Different Precursors
310Perspectives on future directions in III-N semiconductor research
311AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
312Silicon nanowire networks for multi-stage thermoelectric modules
313Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
314Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
315Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
316In-gap states in titanium dioxide and oxynitride atomic layer deposited films
317Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
318AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
319Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
320Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
321Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
322Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
323Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
324Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
325Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry