| 1 | Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer |
| 2 | Sub-10-nm ferroelectric Gd-doped HfO2 layers |
| 3 | Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition |
| 4 | Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material |
| 5 | Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting |
| 6 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy |
| 7 | Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications |
| 8 | Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition |
| 9 | Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment |
| 10 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
| 11 | Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer |
| 12 | Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition |
| 13 | Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature |
| 14 | Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma |
| 15 | Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries |
| 16 | Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions |
| 17 | Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs |
| 18 | Atomic layer epitaxy for quantum well nitride-based devices |
| 19 | Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier |
| 20 | Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties |
| 21 | Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods |
| 22 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
| 23 | Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content |
| 24 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 25 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
| 26 | Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode |
| 27 | Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN |
| 28 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
| 29 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
| 30 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
| 31 | PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity |
| 32 | Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries |
| 33 | Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor |
| 34 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
| 35 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 36 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
| 37 | Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy |
| 38 | Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth |
| 39 | Atomic layer deposition of titanium nitride from TDMAT precursor |
| 40 | Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating |
| 41 | Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma |
| 42 | Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights |
| 43 | New materials for memristive switching |
| 44 | Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition |
| 45 | Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2 |
| 46 | Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum |
| 47 | Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries |
| 48 | Nitride memristors |
| 49 | Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant |
| 50 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
| 51 | Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy |
| 52 | Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films |
| 53 | Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films |
| 54 | Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature |
| 55 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 56 | Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization |
| 57 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 58 | Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements |
| 59 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
| 60 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 61 | Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition |
| 62 | Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma |
| 63 | Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma |
| 64 | Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 65 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 66 | ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs |
| 67 | Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering |
| 68 | In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition |
| 69 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 70 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 71 | Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy |
| 72 | Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware |
| 73 | Characteristics of TiO2 Films Prepared by ALD With and Without Plasma |
| 74 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
| 75 | Fully CMOS-compatible titanium nitride nanoantennas |
| 76 | RF Characterization of Novel Superconducting Materials and Multilayers |
| 77 | Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor |
| 78 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 79 | In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition |
| 80 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
| 81 | Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films |
| 82 | Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization |
| 83 | Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries |
| 84 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
| 85 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 86 | Perspectives on future directions in III-N semiconductor research |
| 87 | Nonvolatile Capacitive Crossbar Array for In-Memory Computing |
| 88 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 89 | Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor |
| 90 | Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane |
| 91 | Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies |
| 92 | Plasma-enhanced atomic layer deposition of ruthenium metal on free-standing carbon nanotube forest for 3D flexible binder-less supercapacitor electrodes |
| 93 | Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma |
| 94 | The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films |
| 95 | Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition |
| 96 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
| 97 | AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition |
| 98 | Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry |
| 99 | A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition |
| 100 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
| 101 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
| 102 | Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition |
| 103 | Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition |
| 104 | Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator |
| 105 | Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry |
| 106 | Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates |
| 107 | Modal properties of a strip-loaded horizontal slot waveguide |
| 108 | Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation |
| 109 | Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer |
| 110 | Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics |
| 111 | In-gap states in titanium dioxide and oxynitride atomic layer deposited films |
| 112 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 113 | Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition |
| 114 | Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT |
| 115 | Analysis of nitrogen species in titanium oxynitride ALD films |
| 116 | Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition |
| 117 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 118 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 119 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
| 120 | Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride |
| 121 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
| 122 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
| 123 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 124 | High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications |
| 125 | GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation |
| 126 | ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors |
| 127 | Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma |
| 128 | The effects of plasma treatment on the thermal stability of HfO2 thin films |
| 129 | Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment |
| 130 | PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen |
| 131 | High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy |
| 132 | RF Characterization of Novel Superconducting Materials and Multilayers |
| 133 | Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper |
| 134 | Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method |
| 135 | Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources |
| 136 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
| 137 | High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2 |
| 138 | High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
| 139 | Atomic layer epitaxy for quantum well nitride-based devices |
| 140 | Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer |
| 141 | Annealing behavior of ferroelectric Si-doped HfO2 thin films |
| 142 | Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer |
| 143 | The role of plasma in plasma-enhanced atomic layer deposition of crystalline films |
| 144 | Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition |
| 145 | Atomic layer deposition of titanium nitride for quantum circuits |
| 146 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 147 | Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects |
| 148 | Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy |
| 149 | Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor |
| 150 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 151 | Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition |
| 152 | Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices |
| 153 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
| 154 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
| 155 | Fabrication and deformation of three-dimensional hollow ceramic nanostructures |
| 156 | Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films |
| 157 | Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry |
| 158 | XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition |
| 159 | Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs |
| 160 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
| 161 | Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate |
| 162 | Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology |
| 163 | Silicon nanowire networks for multi-stage thermoelectric modules |
| 164 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
| 165 | Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes |
| 166 | Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane |
| 167 | Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices |
| 168 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
| 169 | Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy |
| 170 | Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
| 171 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
| 172 | Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy |
| 173 | Film Uniformity in Atomic Layer Deposition |
| 174 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 175 | Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions |
| 176 | Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy |
| 177 | Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition |
| 178 | Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition |
| 179 | Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films |
| 180 | Perspectives on future directions in III-N semiconductor research |
| 181 | In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating |
| 182 | Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application |
| 183 | Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition |
| 184 | Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition |
| 185 | New materials for memristive switching |
| 186 | Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time |
| 187 | Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride |
| 188 | The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties |
| 189 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
| 190 | A controlled growth of WNx and WCx thin films prepared by atomic layer deposition |
| 191 | AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD |
| 192 | Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study |
| 193 | Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs |
| 194 | Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2 |
| 195 | Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 196 | Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition |
| 197 | Perspectives on future directions in III-N semiconductor research |
| 198 | Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 199 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |
| 200 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 201 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 202 | Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition |
| 203 | Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric |
| 204 | Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations |
| 205 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 206 | Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures |
| 207 | Atomic layer epitaxy for quantum well nitride-based devices |
| 208 | SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition |
| 209 | Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation |
| 210 | Microwave properties of superconducting atomic-layer deposited TiN films |
| 211 | Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition |
| 212 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
| 213 | Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition |
| 214 | A route to low temperature growth of single crystal GaN on sapphire |
| 215 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
| 216 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 217 | Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD |
| 218 | Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films |
| 219 | The physical properties of cubic plasma-enhanced atomic layer deposition TaN films |
| 220 | Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories |
| 221 | Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers |
| 222 | Plasma-enhanced atomic layer deposition of tungsten nitride |
| 223 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 224 | Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx |
| 225 | Growth of aluminum nitride films by plasma-enhanced atomic layer deposition |
| 226 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
| 227 | Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor |
| 228 | Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride |
| 229 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 230 | Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition |
| 231 | Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators |
| 232 | Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy |
| 233 | Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 234 | AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms |
| 235 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
| 236 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
| 237 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 238 | Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics |
| 239 | Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN |
| 240 | High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition |
| 241 | Sub-nanometer heating depth of atomic layer annealing |
| 242 | Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas |
| 243 | AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs |
| 244 | Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition |
| 245 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 246 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
| 247 | Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods |
| 248 | Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process |
| 249 | ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices |
| 250 | In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films |
| 251 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 252 | Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor |
| 253 | Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition |
| 254 | Gallium nitride thin films by microwave plasma-assisted ALD |
| 255 | Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration |
| 256 | Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
| 257 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 258 | Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition |
| 259 | Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells |
| 260 | Plasma-Assisted ALD of LiPO(N) for Solid State Batteries |
| 261 | Structural and optical characterization of low-temperature ALD crystalline AlN |
| 262 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
| 263 | In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices |
| 264 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 265 | Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals |
| 266 | Atomic Layer Deposition of Niobium Nitride from Different Precursors |
| 267 | Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
| 268 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
| 269 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 270 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
| 271 | Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition |
| 272 | Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase |
| 273 | Plasma-enhanced atomic layer deposition of palladium on a polymer substrate |
| 274 | Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study |
| 275 | Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter |
| 276 | Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance |
| 277 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 278 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
| 279 | Fundamental beam studies of radical enhanced atomic layer deposition of TiN |
| 280 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 281 | Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films |
| 282 | Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils |
| 283 | Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation |
| 284 | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma |
| 285 | ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors |
| 286 | Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition |
| 287 | Atomic layer deposition of TiN for the fabrication of nanomechanical resonators |
| 288 | Plasma-enhanced atomic layer deposition of vanadium nitride |
| 289 | Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition |
| 290 | Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition |
| 291 | Trilayer Tunnel Selectors for Memristor Memory Cells |
| 292 | Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer |
| 293 | AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing |
| 294 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
| 295 | Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices |
| 296 | Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure |
| 297 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
| 298 | Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions |
| 299 | Nitride memristors |
| 300 | Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition |
| 301 | Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension |
| 302 | Plasma-enhanced atomic layer deposition of superconducting niobium nitride |
| 303 | Perspectives on future directions in III-N semiconductor research |
| 304 | Plasma-enhanced atomic layer deposition of Co on metal surfaces |
| 305 | Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films |
| 306 | Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors |
| 307 | Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes |
| 308 | Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers |
| 309 | Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures |
| 310 | Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 |
| 311 | Plasma enhanced atomic layer deposition of SiNx:H and SiO2 |
| 312 | Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition |
| 313 | Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering |
| 314 | Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes |
| 315 | Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries |
| 316 | The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation |
| 317 | Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing |
| 318 | Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry |
| 319 | Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten |
| 320 | Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas |
| 321 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
| 322 | Gadolinium nitride films deposited using a PEALD based process |
| 323 | Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices |
| 324 | Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN |
| 325 | Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8] |
| 326 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
| 327 | Atmospheric pressure plasma enhanced spatial ALD of silver |
| 328 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 329 | Performance of Samples with Novel SRF Materials and Growth Techniques |
| 330 | Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition |
| 331 | Atomic Layer Deposition of the Solid Electrolyte LiPON |
| 332 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
| 333 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 334 | Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications |
| 335 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
| 336 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 337 | Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires |
| 338 | Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition |
| 339 | An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices |
| 340 | Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition |
| 341 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 342 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 343 | Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System |
| 344 | A controlled growth of WNx and WCx thin films prepared by atomic layer deposition |
| 345 | Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process |
