N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
2Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
3Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
4Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
5Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
6Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
7Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
8In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
9Perspectives on future directions in III-N semiconductor research
10Structural and optical characterization of low-temperature ALD crystalline AlN
11Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
12The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
13Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
14Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
15Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
16Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
17Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
18Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
19Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
20Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
21Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
22Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
23Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
24Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
25Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
26Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
27Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
28ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
29Annealing behavior of ferroelectric Si-doped HfO2 thin films
30Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
31Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
32Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
33The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
34Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
35AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
36Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
37Fabrication and deformation of three-dimensional hollow ceramic nanostructures
38PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
39Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
40Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
41Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
42Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
43Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
44Film Uniformity in Atomic Layer Deposition
45Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
46Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
47The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
48Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
49Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
50Trilayer Tunnel Selectors for Memristor Memory Cells
51The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
52Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
53Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
54Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
55Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
56AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
57Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
58ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
59Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
60Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
61Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
62Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
63Nitride memristors
64Plasma-enhanced atomic layer deposition of titanium vanadium nitride
65The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
66Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
67Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
68Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
69Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
70An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
71Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
72In-gap states in titanium dioxide and oxynitride atomic layer deposited films
73Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
74XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
75Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
76Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
77Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
78High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
79Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
80Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
81Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
82Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
83GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
84Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
85Gadolinium nitride films deposited using a PEALD based process
86New materials for memristive switching
87The effects of plasma treatment on the thermal stability of HfO2 thin films
88Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
89Microwave properties of superconducting atomic-layer deposited TiN films
90Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
91Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
92Radical Enhanced Atomic Layer Deposition of Metals and Oxides
93PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
94Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
95Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
96Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
97Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
98Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
99Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
100Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
101Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
102Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
103Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
104Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
105Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
106Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
107Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
108Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
109Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
110Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
111A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
112Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
113AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
114Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
115Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
116Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
117Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
118Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
119Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
120Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
121Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
122Atomic Layer Deposition of Niobium Nitride from Different Precursors
123Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
124Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
125Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
126Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
127Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
128Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
129Perspectives on future directions in III-N semiconductor research
130Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
131Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
132Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
133Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
134Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
135Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
136Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
137In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
138Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
139Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
140Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
141Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
142Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
143Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
144Fully CMOS-compatible titanium nitride nanoantennas
145Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
146Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
147Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
148Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
149Radical Enhanced Atomic Layer Deposition of Metals and Oxides
150Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
151Atomic layer deposition of titanium nitride from TDMAT precursor
152Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
153Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
154Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
155Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
156In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
157Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
158Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
159High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
160Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
161Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
162Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
163Fundamental beam studies of radical enhanced atomic layer deposition of TiN
164Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
165Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
166A route to low temperature growth of single crystal GaN on sapphire
167Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
168Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
169Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
170Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
171Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
172Atomic Layer Deposition of the Solid Electrolyte LiPON
173Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
174Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
175Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
176A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
177Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
178Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
179Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
180Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
181Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
182Atomic layer epitaxy for quantum well nitride-based devices
183AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
184Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
185Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
186Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
187Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
188Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
189Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
190AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
191Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
192Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
193Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
194Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
195A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
196Sub-nanometer heating depth of atomic layer annealing
197Plasma-enhanced atomic layer deposition of titanium vanadium nitride
198Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
199Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
200Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
201Gallium nitride thin films by microwave plasma-assisted ALD
202Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
203Analysis of nitrogen species in titanium oxynitride ALD films
204Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
205Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
206Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
207Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
208Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
209Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
210Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
211Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
212Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
213Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
214Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
215Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
216Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
217Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
218SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
219Silicon nanowire networks for multi-stage thermoelectric modules
220Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
221Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
222Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
223Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
224Atomic layer epitaxy for quantum well nitride-based devices
225Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
226Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
227Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
228Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
229Perspectives on future directions in III-N semiconductor research
230TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
231Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
232Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
233Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
234Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
235Atmospheric pressure plasma enhanced spatial ALD of silver
236Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
237ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
238Modal properties of a strip-loaded horizontal slot waveguide
239Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
240Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
241Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
242Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
243Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
244Plasma enhanced atomic layer deposition of SiNx:H and SiO2
245Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
246Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
247Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
248In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
249Nitride memristors
250Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
251Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
252Plasma-enhanced atomic layer deposition of vanadium nitride
253Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
254Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
255Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
256Plasma-enhanced atomic layer deposition of Co on metal surfaces
257Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
258Atomic layer epitaxy for quantum well nitride-based devices
259Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
260Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
261Performance of Samples with Novel SRF Materials and Growth Techniques
262Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
263Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
264A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
265Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
266Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
267Plasma-enhanced atomic layer deposition of tungsten nitride
268Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
269Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
270Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
271Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
272High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
273Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
274Atomic layer deposition of titanium nitride for quantum circuits
275Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
276Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
277Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
278Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
279Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
280Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
281Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
282Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
283Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
284Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
285Perspectives on future directions in III-N semiconductor research
286Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
287Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
288Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
289Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
290ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
291Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
292In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
293Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
294Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
295Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
296Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
297Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
298Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
299High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
300Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
301Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
302Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
303Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
304AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
305New materials for memristive switching
306Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
307Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
308In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
309Plasma-enhanced atomic layer deposition of superconducting niobium nitride
310Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
311Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
312Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
313Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
314Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
315Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
316Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
317In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
318AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
319Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
320Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
321High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
322Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
323Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
324Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
325Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
326Plasma-enhanced atomic layer deposition of titanium vanadium nitride
327The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
328Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
329Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
330Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
331Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
332Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
333Sub-10-nm ferroelectric Gd-doped HfO2 layers