N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
2Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
3Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
4Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
5The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
6AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
7Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
8Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
9Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
10Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
11Performance of Samples with Novel SRF Materials and Growth Techniques
12Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
13Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
14In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
15Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
16Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
17Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
18Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
19Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
20Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
21Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
22Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
23Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
24Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
25Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
26Plasma-enhanced atomic layer deposition of titanium vanadium nitride
27Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
28Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
29Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
30Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
31Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
32Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
33Film Uniformity in Atomic Layer Deposition
34The effects of plasma treatment on the thermal stability of HfO2 thin films
35Radical Enhanced Atomic Layer Deposition of Metals and Oxides
36Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
37Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
38Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
39Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
40Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
41Plasma-enhanced atomic layer deposition of tungsten nitride
42Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
43Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
44Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
45Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
46Plasma-enhanced atomic layer deposition of Co on metal surfaces
47Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
48Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
49Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
50Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
51Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
52Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
53Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
54Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
55Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
56Atomic layer epitaxy for quantum well nitride-based devices
57Trilayer Tunnel Selectors for Memristor Memory Cells
58Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
59Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
60Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
61Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
62Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
63Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
64Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
65Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
66Atomic layer epitaxy for quantum well nitride-based devices
67In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
68Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
69A route to low temperature growth of single crystal GaN on sapphire
70Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
71RF Characterization of Novel Superconducting Materials and Multilayers
72Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
73Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
74Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
75Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
76Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
77Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
78Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
79Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
80Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
81Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
82Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
83Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
84Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
85Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
86Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
87Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
88Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
89Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
90Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
91Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
92Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
93Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
94Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
95Nonvolatile Capacitive Crossbar Array for In-Memory Computing
96Sub-10-nm ferroelectric Gd-doped HfO2 layers
97Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
98Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
99Fabrication and deformation of three-dimensional hollow ceramic nanostructures
100Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
101Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
102Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films
103ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
104Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
105Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
106Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
107RF Characterization of Novel Superconducting Materials and Multilayers
108Atomic layer epitaxy for quantum well nitride-based devices
109Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
110A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
111In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
112Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
113Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
114New materials for memristive switching
115Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
116Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
117A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
118Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
119Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
120Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
121Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
122Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
123Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
124TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
125Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
126GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
127A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
128AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
129Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
130Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
131Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
132AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
133Atomic Layer Deposition of the Solid Electrolyte LiPON
134Atomic layer deposition of titanium nitride for quantum circuits
135Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
136Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
137Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
138Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
139Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
140Atmospheric pressure plasma enhanced spatial ALD of silver
141Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
142Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
143Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
144Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
145Perspectives on future directions in III-N semiconductor research
146Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
147Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
148Annealing behavior of ferroelectric Si-doped HfO2 thin films
149SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
150Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
151AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
152Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
153Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
154Plasma-enhanced atomic layer deposition of titanium vanadium nitride
155Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
156In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
157Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride
158Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
159Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
160Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
161Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
162Sub-nanometer heating depth of atomic layer annealing
163Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
164An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
165Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
166Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
167Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
168The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
169Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
170Nitride memristors
171PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
172Microwave properties of superconducting atomic-layer deposited TiN films
173Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
174Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
175Plasma-enhanced atomic layer deposition of titanium vanadium nitride
176Atomic Layer Deposition of Niobium Nitride from Different Precursors
177Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
178Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
179Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
180Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
181Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
182AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
183Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
184Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
185Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
186XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
187Perspectives on future directions in III-N semiconductor research
188A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
189Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
190In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
191The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
192Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
193Radical Enhanced Atomic Layer Deposition of Metals and Oxides
194Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
195Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
196Atomic layer deposition of titanium nitride from TDMAT precursor
197Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
198Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
199Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
200Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
201Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
202Gadolinium nitride films deposited using a PEALD based process
203Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
204In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
205Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
206Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
207Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
208Perspectives on future directions in III-N semiconductor research
209Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
210Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
211Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
212Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
213Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
214Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
215Analysis of nitrogen species in titanium oxynitride ALD films
216Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
217Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
218Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
219Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
220Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
221Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
222Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
223ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
224Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
225Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
226Plasma enhanced atomic layer deposition of SiNx:H and SiO2
227Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
228Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
229Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
230Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
231Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
232Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
233Perspectives on future directions in III-N semiconductor research
234High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
235Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
236Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
237Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
238Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
239Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
240Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
241Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
242Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
243Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
244In-gap states in titanium dioxide and oxynitride atomic layer deposited films
245Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
246Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
247Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
248Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
249Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
250High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
251Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
252Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
253Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
254Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
255Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
256Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
257The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
258Plasma-enhanced atomic layer deposition of vanadium nitride
259Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
260Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
261Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
262Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
263Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
264Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content
265Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
266Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
267Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
268ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
269Modal properties of a strip-loaded horizontal slot waveguide
270Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
271The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
272Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
273Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
274Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
275Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
276Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
277Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
278Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
279Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
280Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
281Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
282High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
283Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
284Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
285Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
286AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
287Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
288Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
289Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
290Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
291Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
292Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
293Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
294In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
295Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
296AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
297PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
298Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
299High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
300Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
301Silicon nanowire networks for multi-stage thermoelectric modules
302Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
303Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
304Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
305Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
306The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
307Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
308Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
309Plasma-enhanced atomic layer deposition of superconducting niobium nitride
310New materials for memristive switching
311Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
312Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
313Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
314Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
315Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
316Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
317Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
318Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
319Structural and optical characterization of low-temperature ALD crystalline AlN
320Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
321Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
322Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
323Gallium nitride thin films by microwave plasma-assisted ALD
324Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
325Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
326Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
327Fully CMOS-compatible titanium nitride nanoantennas
328Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
329Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
330Nitride memristors
331Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
332High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
333Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
334Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
335Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
336Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
337Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
338Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
339Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
340Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
341Fundamental beam studies of radical enhanced atomic layer deposition of TiN
342ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors