N2, Nitrogen, CAS# 7727-37-9

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
2Atomic layer deposition of titanium nitride from TDMAT precursor
3Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
4Nonvolatile Capacitive Crossbar Array for In-Memory Computing
5Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
6Perspectives on future directions in III-N semiconductor research
7A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
8Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
9Plasma-enhanced atomic layer deposition of titanium vanadium nitride
10A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
11Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
12AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
13The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
14Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
15Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
16Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content
17Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
18Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
19Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
20Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
21Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
22Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter
23Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
24RF Characterization of Novel Superconducting Materials and Multilayers
25Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
26Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
27Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
28Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
29Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
30Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
31Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
32Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
33TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
34Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
35Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
36Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
37A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
38Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
39Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
40Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
41Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
42Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
43Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition
44Radical Enhanced Atomic Layer Deposition of Metals and Oxides
45New materials for memristive switching
46Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
47Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
48Nitride memristors
49Film Uniformity in Atomic Layer Deposition
50AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
51Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
52Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
53Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
54Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
55Plasma-enhanced atomic layer deposition of ruthenium metal on free-standing carbon nanotube forest for 3D flexible binder-less supercapacitor electrodes
56Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
57Nitride memristors
58Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
59Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources
60Engineered Tunneling Contacts with Low-Temperature Atomic Layer Deposition of AlN on GaN
61Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
62Plasma enhanced atomic layer deposition of SiNx:H and SiO2
63Performance of Samples with Novel SRF Materials and Growth Techniques
64Plasma activation and atomic layer deposition of TiO2 on polypropylene membranes for improved performances of lithium-ion batteries
65High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
66Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
67Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
68Perspectives on future directions in III-N semiconductor research
69Atomic Layer Deposition of the Solid Electrolyte LiPON
70Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
71Analysis of nitrogen species in titanium oxynitride ALD films
72Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
73Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
74Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment
75Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
76Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
77Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
78Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
79Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
80Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
81Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
82Perspectives on future directions in III-N semiconductor research
83The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
84Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
85Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
86Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
87Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT
88Improvement of Vth Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
89Plasma-Assisted ALD of LiPO(N) for Solid State Batteries
90Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
91Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
92In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
93Gadolinium nitride films deposited using a PEALD based process
94Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
95Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
96Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
97Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
98Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
99Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
100Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
101Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
102Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
103Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
104Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
105Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
106Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
107Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
108Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
109Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
110Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
111Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
112Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
113Surface reactions of aminosilane precursors during N2 plasma-assisted atomic layer deposition of SiNx
114Characterization of AlON-TiON Stacked Insulators For ZnS:Mn Thin Film Electroluminescent Devices
115Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
116Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
117Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
118Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
119Annealing behavior of ferroelectric Si-doped HfO2 thin films
120Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
121Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
122Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
123In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
124Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
125Microwave properties of superconducting atomic-layer deposited TiN films
126Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
127Plasma-enhanced atomic layer deposition of vanadium nitride
128PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen
129Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
130Plasma-enhanced atomic layer deposition of titanium vanadium nitride
131Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
132Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
133Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
134Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
135Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
136Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
137Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
138In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
139Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
140Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
141Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
142Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
143Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
144Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
145Sub-10-nm ferroelectric Gd-doped HfO2 layers
146Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
147Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
148Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
149Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
150GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
151AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
152Selective Deposition of Low Temperature AlN Ohmic Contacts for GaN Devices
153In-gap states in titanium dioxide and oxynitride atomic layer deposited films
154Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
155Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
156Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
157Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride
158Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
159Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
160Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
161Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
162Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
163In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
164Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
165Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
166Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
167Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
168Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
169Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
170Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
171Plasma-enhanced atomic layer deposition of Co on metal surfaces
172Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
173Impact of Post Fabrication Annealing PEALD ZrO2 for GaN MOSFETs
174Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
175Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
176High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
177Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
178Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
179Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
180Characteristics of Aluminum Silicate Films Grown by Plasma-Enhanced Atomic Layer Deposition
181Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
182Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
183Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
184AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
185ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
186Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
187Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
188Atomic layer epitaxy for quantum well nitride-based devices
189Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
190Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
191Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
192Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
193Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
194Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
195Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane
196Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
197Atomic layer deposition of titanium nitride for quantum circuits
198The effects of plasma treatment on the thermal stability of HfO2 thin films
199Pulse plasma assisted atomic layer deposition of W–C–N thin films for Cu interconnects
200Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
201RF Characterization of Novel Superconducting Materials and Multilayers
202Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5 and the Effects on Electrical Properties of In situ Nitridation
203Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
204Atmospheric pressure plasma enhanced spatial ALD of silver
205Independent tuning of size and coverage of supported Pt nanoparticles using atomic layer deposition
206Characteristics of TiO2 Films Prepared by ALD With and Without Plasma
207Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
208Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
209Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier
210Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
211Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
212Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
213Fundamental beam studies of radical enhanced atomic layer deposition of TiN
214New materials for memristive switching
215Ion energy control during plasma-enhanced atomic layer deposition: enabling materials control and selective processing in the third dimension
216Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
217Plasma-enhanced atomic layer deposition of titanium vanadium nitride
218Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
219Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
220Study on SiN and SiCN film production using PE-ALD process with high-density multi-ICP source at low temperature
221Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
222Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
223Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
224Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
225Investigation of a Two-Layer Gate Insulator Using Plasma-Enhanced ALD for Ultralow Temperature Poly-Si TFTs
226Atomic layer epitaxy for quantum well nitride-based devices
227Plasma-enhanced atomic layer deposition of superconducting niobium nitride
228Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
229The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
230Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System
231Silicon nanowire networks for multi-stage thermoelectric modules
232Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma
233Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
234Radical Enhanced Atomic Layer Deposition of Metals and Oxides
235Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
236Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
237Sub-nanometer heating depth of atomic layer annealing
238Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
239Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
240Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
241Fully CMOS-compatible titanium nitride nanoantennas
242Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
243Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
244Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
245Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
246Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition
247An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
248High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
249A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
250Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
251Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process
252Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
253Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
254Simple plasma assisted atomic layer deposition technique for high substitutional nitrogen doping of TiO2
255Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
256Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
257Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
258Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
259The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
260PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
261Trilayer Tunnel Selectors for Memristor Memory Cells
262Analysis of titanium species in titanium oxynitride films prepared by plasma enhanced atomic layer deposition
263Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
264Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
265Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
266Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
267Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
268Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
269Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
270Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
271Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
272Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
273AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
274ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
275Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
276Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
277Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
278Structural and optical characterization of low-temperature ALD crystalline AlN
279Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
280Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
281In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
282Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
283SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
284Atomic Layer Deposition of Niobium Nitride from Different Precursors
285Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
286Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
287Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
288Gallium nitride thin films by microwave plasma-assisted ALD
289Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
290Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
291ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
292Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
293Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
294High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
295Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
296Scaled, Ferroelectric Memristive Synapse for Back-End-of-Line Integration with Neuromorphic Hardware
297Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
298In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
299Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
300ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
301AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
302Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
303Atomic layer epitaxy for quantum well nitride-based devices
304AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
305Modal properties of a strip-loaded horizontal slot waveguide
306The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
307Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
308Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
309Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
310Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
311Plasma enhanced atomic layer deposition of a (nitrogen doped) Ti phosphate coating for improved energy storage in Li-ion batteries
312Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition
313Fabrication and deformation of three-dimensional hollow ceramic nanostructures
314Effect of Buffer Layer for HfO2 Gate Dielectrics Grown by Remote Plasma Atomic Layer Deposition
315Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
316Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
317Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
318Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
319Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
320Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
321XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
322Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
323Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
324Plasma-enhanced atomic layer deposition of tungsten nitride
325Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
326Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
327Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
328High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
329In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
330Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
331A route to low temperature growth of single crystal GaN on sapphire
332Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
333Perspectives on future directions in III-N semiconductor research
334Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
335Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
336Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
337Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
338Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
339Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties
340Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
341Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
342The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
343Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
344Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
345Antiferromagnetism and p-type conductivity of nonstoichiometric nickel oxide thin films