Publication Information

Title:
Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
Type:
Journal
Info:
ACS Appl. Electron. Mater. 2020, 2, 4, 891-897
Date:
2020-03-24

Author Information

Name Institution
Chin-I WangNational Taiwan University
Teng-Jan ChangNational Taiwan University
Yu-Tung YinNational Taiwan University
Yu-Sen JiangNational Taiwan University
Jing-Jong ShyueAcademia Sinica
Miin-Jang ChenNational Taiwan University

Films


Plasma AlN




Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Substrates

Ge

Keywords

Notes

1480