TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4, CAS# 19962-11-9

Informational Websites

NumberWebsite
1https://pubchem.ncbi.nlm.nih.gov/compound/140609#section=Top

Where to buy

NumberVendorRegionLink
1Ereztech🇺🇸Tetrakis(dimethylamino) hafnium(IV)
2Strem Chemicals, Inc.🇺🇸Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH
3Strem Chemicals, Inc.🇺🇸Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder with high temperature valve for CVD/ALD
4American Elements🇺🇸Tetrakis(dimethylamido)hafnium(IV)
5Gelest🇺🇸Hafnium Dimethylamide
6Apollo Scientific🇬🇧Tetrakis(dimethylamino)hafnium(IV) 99.999%
7Strem Chemicals, Inc.🇺🇸Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder for CVD/ALD
8DOCK/CHEMICALS🇩🇪Tetrakis(dimethylamido)hafnium
9Sigma-Aldrich, Co. LLC🇺🇸Tetrakis(dimethylamido)hafnium(IV) 99.99%

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 75 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
2Damage evaluation in graphene underlying atomic layer deposition dielectrics
3Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
4Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
5Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
6Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
7Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
8Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
9A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
10The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
11TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
12Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
13Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
14Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
15A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
16Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
17Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
18In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
19Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
20Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
21Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
22ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies
23Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
24The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
25Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
26Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
27Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
28High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
29Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
30Annealing behavior of ferroelectric Si-doped HfO2 thin films
31AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
32Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
33Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
34Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
35Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
36On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
37Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
38Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
39Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
40Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
41Nonvolatile Capacitive Crossbar Array for In-Memory Computing
42HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
43Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
44Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
45Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
46Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys
47Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
48Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
49A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
50Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
51The effects of layering in ferroelectric Si-doped HfO2 thin films
52Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
53Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
54Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
55Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
56Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
57Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices
58Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
59Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
60Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
61Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
62Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
63Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
64Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
65Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
66Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
67Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
68HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
69Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
70Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
71HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
72Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
73Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
74Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
75Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition