TDMAHf, (Me2N)4Hf, [(CH3)2N]4Hf, Tetrakis(DiMethylAmido) Hafnium, Hafnium Dimethylamide, also CAS# 19782-68-4, CAS# 19962-11-9

Informational Websites

NumberWebsite
1https://pubchem.ncbi.nlm.nih.gov/compound/140609#section=Top

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder with high temperature valve for CVD/ALD
2EreztechTetrakis(dimethylamino)hafnium(IV) (99.99%-Hf (excluding Zr))
3Strem Chemicals, Inc.Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder for CVD/ALD
4GelestHafnium Dimethylamide
5Strem Chemicals, Inc.Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 49 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
2Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
3Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
4Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
5HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
6A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
7A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
8Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
9Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
10Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
11AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
12Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
13Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
14Damage evaluation in graphene underlying atomic layer deposition dielectrics
15Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
16Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
17Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
18Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
19Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
20HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
21High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
22Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
23Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
24In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
25Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
26Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
27Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
28Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
29Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
30Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
31Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
32Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
33Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
34Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
35Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
36Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
37Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
38Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
39Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
40HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
41Annealing behavior of ferroelectric Si-doped HfO2 thin films
42Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
43Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
44Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
45Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
46Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
47TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
48The effects of layering in ferroelectric Si-doped HfO2 thin films
49Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique


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