TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4, CAS# 19962-11-9

Informational Websites

NumberWebsite
1https://pubchem.ncbi.nlm.nih.gov/compound/140609#section=Top

Where to buy

NumberVendorRegionLink
1Ereztech๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamino) hafnium(IV)
2Sigma-Aldrich, Co. LLC๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamido)hafnium(IV) รขโ€ฐยฅ99.99%
3EpiValence๐Ÿ‡ฌ๐Ÿ‡งHafnium dimethylamide
4Strem Chemicals, Inc.๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH
5DOCK/CHEMICALS๐Ÿ‡ฉ๐Ÿ‡ชTetrakis(dimethylamido)hafnium
6Gelest๐Ÿ‡บ๐Ÿ‡ธHafnium Dimethylamide
7American Elements๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamido)hafnium(IV)
8Strem Chemicals, Inc.๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder with high temperature valve for CVD/ALD
9Strem Chemicals, Inc.๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder for CVD/ALD
10Apollo Scientific๐Ÿ‡ฌ๐Ÿ‡งTetrakis(dimethylamino)hafnium(IV) 99.999%

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 70 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Enhanced electrical and reliability characteristics in HfON gated Geย p-MOSFETs with H2 and NH3 plasma treated interfacial layers
2Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
3Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
4Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
5Annealing behavior of ferroelectric Si-doped HfO2 thin films
6Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
7Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
8Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
9Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
10Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
11On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
12Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
13Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
14Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
15Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
16Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
17Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
18Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
19HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
20Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
21Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
22Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
23High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
24Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
25Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
26Damage evaluation in graphene underlying atomic layer deposition dielectrics
27Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
28Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
29Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
30Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
31Uniform Growth of Sub-5-Nanometer High-ฮบ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
32The effects of layering in ferroelectric Si-doped HfO2 thin films
33Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
34Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
35Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
36Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
37In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
38Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
39Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
40TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
41HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
42The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
43Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
44Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
45Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
46Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
47Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
48HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
49Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
50Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
51Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
52Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
53A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
54Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
55Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ ฮฒ-Ga2O3
56Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
57Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
58Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
59Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
60The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
61Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
62Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
63Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
64AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
65A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
66Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
67Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
68Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
69A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
70Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition