TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4, CAS# 19962-11-9

Informational Websites

NumberWebsite
1https://pubchem.ncbi.nlm.nih.gov/compound/140609#section=Top

Where to buy

NumberVendorRegionLink
1American Elements๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamido)hafnium(IV)
2Strem Chemicals, Inc.๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH
3Apollo Scientific๐Ÿ‡ฌ๐Ÿ‡งTetrakis(dimethylamino)hafnium(IV) 99.999%
4EpiValence๐Ÿ‡ฌ๐Ÿ‡งHafnium dimethylamide
5DOCK/CHEMICALS๐Ÿ‡ฉ๐Ÿ‡ชTetrakis(dimethylamido)hafnium
6Strem Chemicals, Inc.๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder for CVD/ALD
7Ereztech๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamino) hafnium(IV)
8Sigma-Aldrich, Co. LLC๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamido)hafnium(IV) รขโ€ฐยฅ99.99%
9Gelest๐Ÿ‡บ๐Ÿ‡ธHafnium Dimethylamide
10Strem Chemicals, Inc.๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder with high temperature valve for CVD/ALD

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 70 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
2Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
3AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
4Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
5Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
6Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
7A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
8The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
9Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
10Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
11Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
12Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
13Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
14Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
15Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
16Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
17High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
18The effects of layering in ferroelectric Si-doped HfO2 thin films
19Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
20Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
21Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
22Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
23Uniform Growth of Sub-5-Nanometer High-ฮบ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
24Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
25Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
26Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
27Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
28Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
29Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
30Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
31Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
32Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
33Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
34Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
35Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
36Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
37On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
38Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
39In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
40Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
41Damage evaluation in graphene underlying atomic layer deposition dielectrics
42Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
43Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
44Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
45TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
46The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
47Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
48Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
49HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
50Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
51Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
52HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
53Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
54Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
55Enhanced electrical and reliability characteristics in HfON gated Geย p-MOSFETs with H2 and NH3 plasma treated interfacial layers
56Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
57Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
58Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
59Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
60Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
61Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
62A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
63Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
64Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ ฮฒ-Ga2O3
65Annealing behavior of ferroelectric Si-doped HfO2 thin films
66HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
67Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
68Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
69Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
70A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors