TDMAHf, (Me₂N)₄Hf, [(CH₃)₂N]₄Hf, Tetrakis(DiMethylAmido) Hafnium, Hafnium Dimethylamide, also CAS# 19782-68-4, CAS# 19962-11-9

Informational Websites

Number	Website
1	https://pubchem.ncbi.nlm.nih.gov/compound/140609#section=Top

Where to buy

Number	Vendor	Link
1	Strem Chemicals, Inc.	Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH
2	Strem Chemicals, Inc.	Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder for CVD/ALD
3	Ereztech	Tetrakis(dimethylamino)hafnium(IV) (99.99%-Hf (excluding Zr))
4	Strem Chemicals, Inc.	Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder with high temperature valve for CVD/ALD
5	Gelest	Hafnium Dimethylamide

www.plasma-ald.com does not endorse any chemical suppliers. These links are provided for the benefit of our users. If a link goes bad, let us know.

If you would like your company's precursor products listed, or your existing listing changed or removed, send me an email.

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 56 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
2	Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
3	Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
4	Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
5	HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
6	Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
7	A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
8	A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
9	Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
10	Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
11	Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
12	AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
13	Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
14	Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
15	Damage evaluation in graphene underlying atomic layer deposition dielectrics
16	Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
17	Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
18	Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
19	Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
20	Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
21	Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
22	Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
23	HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
24	High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
25	Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
26	Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
27	In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
28	Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
29	Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
30	Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
31	Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
32	Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
33	Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
34	Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
35	Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
36	Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
37	The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
38	Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
39	Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
40	Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
41	Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
42	Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
43	Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
44	Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
45	Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
46	HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
47	The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
48	Annealing behavior of ferroelectric Si-doped HfO2 thin films
49	Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
50	Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
51	Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
52	Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
53	Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
54	TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
55	The effects of layering in ferroelectric Si-doped HfO2 thin films
56	Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique

Shortcuts

© 2014-2019 plasma-ald.com