TDMAHf, (Me2N)4Hf, [(CH3)2N]4Hf, Tetrakis(DiMethylAmido) Hafnium, Hafnium Dimethylamide, also CAS# 19782-68-4, CAS# 19962-11-9

Informational Websites

NumberWebsite
1https://pubchem.ncbi.nlm.nih.gov/compound/140609#section=Top

Where to buy

NumberVendorLink
1EreztechTetrakis(dimethylamino)hafnium(IV) (99.99%-Hf (excluding Zr))

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 62 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
2Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
3Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
4Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
5HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
6Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
7A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
8A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
9Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
10Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
11Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
12Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
13AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
14Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
15Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
16Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
17Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
18Damage evaluation in graphene underlying atomic layer deposition dielectrics
19Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
20Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
21Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
22Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
23Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
24Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
25Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
26HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
27High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
28Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
29Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
30In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
31Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
32Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
33Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
34Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
35Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
36On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
37Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
38Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
39Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
40Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
41Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
42The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
43Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
44Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
45Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
46Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
47Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
48Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
49Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
50Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
51HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
52The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
53Annealing behavior of ferroelectric Si-doped HfO2 thin films
54Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
55Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
56Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
57Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
58Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
59TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
60The effects of layering in ferroelectric Si-doped HfO2 thin films
61Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
62Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films