TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4, CAS# 19962-11-9

Informational Websites

NumberWebsite
1https://pubchem.ncbi.nlm.nih.gov/compound/140609#section=Top

Where to buy

NumberVendorRegionLink
1Sigma-Aldrich, Co. LLC๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamido)hafnium(IV) รขโ€ฐยฅ99.99%
2American Elements๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamido)hafnium(IV)
3Gelest๐Ÿ‡บ๐Ÿ‡ธHafnium Dimethylamide
4Apollo Scientific๐Ÿ‡ฌ๐Ÿ‡งTetrakis(dimethylamino)hafnium(IV) 99.999%
5Ereztech๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamino) hafnium(IV)
6EpiValence๐Ÿ‡ฌ๐Ÿ‡งHafnium dimethylamide
7Strem Chemicals, Inc.๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH
8Strem Chemicals, Inc.๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder for CVD/ALD
9Strem Chemicals, Inc.๐Ÿ‡บ๐Ÿ‡ธTetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder with high temperature valve for CVD/ALD
10DOCK/CHEMICALS๐Ÿ‡ฉ๐Ÿ‡ชTetrakis(dimethylamido)hafnium

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 70 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
2Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
3High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
4Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
5Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
6AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
7Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
8Damage evaluation in graphene underlying atomic layer deposition dielectrics
9Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
10Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
11Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
12A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
13Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
14Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
15The effects of layering in ferroelectric Si-doped HfO2 thin films
16Annealing behavior of ferroelectric Si-doped HfO2 thin films
17Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
18Uniform Growth of Sub-5-Nanometer High-ฮบ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
19Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
20Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
21Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
22HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
23A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
24Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
25Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
26Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
27Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
28Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
29Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
30In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
31Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
32TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
33Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
34Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
35Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
36On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
37Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
38Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
39The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
40Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
41Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
42Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
43Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
44A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
45Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
46Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
47Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ ฮฒ-Ga2O3
48Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
49Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
50Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
51Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
52Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
53Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
54Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
55Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
56Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
57Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
58Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
59The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
60Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
61HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
62Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
63Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
64HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
65Enhanced electrical and reliability characteristics in HfON gated Geย p-MOSFETs with H2 and NH3 plasma treated interfacial layers
66Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
67Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
68Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
69Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
70Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge