TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4, CAS# 19962-11-9

Informational Websites

NumberWebsite
1https://pubchem.ncbi.nlm.nih.gov/compound/140609#section=Top

Where to buy

NumberVendorRegionLink
1DOCK/CHEMICALS🇩🇪Tetrakis(dimethylamido)hafnium
2Ereztech🇺🇸Tetrakis(dimethylamino) hafnium(IV)
3Gelest🇺🇸Hafnium Dimethylamide
4American Elements🇺🇸Tetrakis(dimethylamido)hafnium(IV)
5Apollo Scientific🇬🇧Tetrakis(dimethylamino)hafnium(IV) 99.999%
6Strem Chemicals, Inc.🇺🇸Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH
7Strem Chemicals, Inc.🇺🇸Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder with high temperature valve for CVD/ALD
8Strem Chemicals, Inc.🇺🇸Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder for CVD/ALD
9Sigma-Aldrich, Co. LLC🇺🇸Tetrakis(dimethylamido)hafnium(IV) 99.99%

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 75 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
2Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
3A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
4A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
5Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
6A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
7Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
8Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
9Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
10Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
11Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
12Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
13Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
14Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
15Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
16Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
17Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
18Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
19HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
20Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
21Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
22Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
23Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
24The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
25Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
26Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
27Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
28On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
29Nonvolatile Capacitive Crossbar Array for In-Memory Computing
30Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
31Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
32Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys
33Damage evaluation in graphene underlying atomic layer deposition dielectrics
34AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
35Annealing behavior of ferroelectric Si-doped HfO2 thin films
36Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
37Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
38Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
39Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
40Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
41Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
42Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
43Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
44Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
45Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
46Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
47Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
48Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
49In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
50The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
51Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
52Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
53Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
54Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
55TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
56ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies
57The effects of layering in ferroelectric Si-doped HfO2 thin films
58Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
59Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices
60HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
61Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
62Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
63HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
64Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
65Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
66Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
67Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
68High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
69Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
70Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
71Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
72Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
73Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
74Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
75Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3