Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4, CAS# 19962-11-9

Informational Websites

NumberWebsite
1https://pubchem.ncbi.nlm.nih.gov/compound/140609#section=Top

Where to buy

NumberVendorRegionLink
1DOCK/CHEMICALS🇩🇪Tetrakis(dimethylamido)hafnium
2Sigma-Aldrich, Co. LLC🇺🇸Tetrakis(dimethylamido)hafnium(IV) 99.99%
3Ereztech🇺🇸Tetrakis(dimethylamino) hafnium(IV)
4Strem Chemicals, Inc.🇺🇸Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder for CVD/ALD
5American Elements🇺🇸Tetrakis(dimethylamido)hafnium(IV)
6Gelest🇺🇸Hafnium Dimethylamide
7Strem Chemicals, Inc.🇺🇸Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder with high temperature valve for CVD/ALD
8Strem Chemicals, Inc.🇺🇸Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH
9Apollo Scientific🇬🇧Tetrakis(dimethylamino)hafnium(IV) 99.999%

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 75 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
2Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
3Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
4Damage evaluation in graphene underlying atomic layer deposition dielectrics
5High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
6HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
7Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
8Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
9Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
10Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
11Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
12Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
13Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
14Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
15Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
16Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
17Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
18Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
19Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
20Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
21Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
22The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
23Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
24Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
25Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
26Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
27Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
28TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
29Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
30Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
31Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
32Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices
33Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
34Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
35Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys
36ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies
37Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
38Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
39Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
40Nonvolatile Capacitive Crossbar Array for In-Memory Computing
41Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
42Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
43Annealing behavior of ferroelectric Si-doped HfO2 thin films
44In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
45A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
46Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
47HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
48The effects of layering in ferroelectric Si-doped HfO2 thin films
49Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
50Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
51Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
52Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
53On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
54Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
55Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
56Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
57Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
58Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
59Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
60A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
61HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
62Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
63Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
64Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
65Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
66Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
67Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
68Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
69Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
70The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
71Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
72Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
73A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
74Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
75Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium