TDMAHf, (Me₂N)₄Hf, [(CH₃)₂N]₄Hf, Tetrakis(DiMethylAmido) Hafnium, Hafnium Dimethylamide, also CAS# 19782-68-4, CAS# 19962-11-9

Informational Websites

Number	Website
1	https://pubchem.ncbi.nlm.nih.gov/compound/140609#section=Top

Where to buy

Number	Vendor	Link
1	Strem Chemicals, Inc.	Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder with high temperature valve for CVD/ALD
2	Ereztech	Tetrakis(dimethylamino)hafnium(IV) (99.99%-Hf (excluding Zr))
3	Strem Chemicals, Inc.	Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder for CVD/ALD
4	Gelest	Hafnium Dimethylamide
5	Strem Chemicals, Inc.	Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 49 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
2	Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
3	Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
4	Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
5	HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
6	A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
7	A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
8	Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
9	Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
10	Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
11	AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
12	Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
13	Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
14	Damage evaluation in graphene underlying atomic layer deposition dielectrics
15	Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
16	Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
17	Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
18	Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
19	Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
20	HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
21	High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
22	Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
23	Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
24	In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
25	Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
26	Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
27	Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
28	Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
29	Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
30	Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
31	Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
32	Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
33	Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
34	Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
35	Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
36	Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
37	Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
38	Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
39	Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
40	HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
41	Annealing behavior of ferroelectric Si-doped HfO2 thin films
42	Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
43	Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
44	Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
45	Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
46	Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
47	TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
48	The effects of layering in ferroelectric Si-doped HfO2 thin films
49	Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique

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