TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4, CAS# 19962-11-9

Informational Websites

NumberWebsite
1https://pubchem.ncbi.nlm.nih.gov/compound/140609#section=Top

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder for CVD/ALD
2Strem Chemicals, Inc.Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH
3Apollo ScientificTetrakis(dimethylamino)hafnium(IV) 99.999%
4EpiValenceHafnium dimethylamide
5GelestHafnium Dimethylamide
6EreztechTetrakis(dimethylamino) hafnium(IV)
7Sigma-Aldrich, Co. LLCTetrakis(dimethylamido)hafnium(IV) ≥99.99%
8American ElementsTetrakis(dimethylamido)hafnium(IV)
9Strem Chemicals, Inc.Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder with high temperature valve for CVD/ALD

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 65 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
2Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
3Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
4Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
5Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
6HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
7Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
8A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
9A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
10Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
11Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
12Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
13Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
14AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
15Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
16Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
17Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
18Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
19Damage evaluation in graphene underlying atomic layer deposition dielectrics
20Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
21Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
22Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
23Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
24Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
25Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
26Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
27HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
28High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
29Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
30Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
31In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
32Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
33Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
34Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
35Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
36Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
37Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
38On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
39Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
40Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
41Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
42Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
43Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
44Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
45The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
46Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
47Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
48Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
49Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
50Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
51Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
52Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
53Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
54HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
55The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
56Annealing behavior of ferroelectric Si-doped HfO2 thin films
57Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
58Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
59Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
60Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
61Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
62TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
63The effects of layering in ferroelectric Si-doped HfO2 thin films
64Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
65Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films