Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4, CAS# 19962-11-9

Informational Websites

NumberWebsite
1https://pubchem.ncbi.nlm.nih.gov/compound/140609#section=Top

Where to buy

NumberVendorRegionLink
1Apollo Scientific🇬🇧Tetrakis(dimethylamino)hafnium(IV) 99.999%
2Strem Chemicals, Inc.🇺🇸Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder with high temperature valve for CVD/ALD
3American Elements🇺🇸Tetrakis(dimethylamido)hafnium(IV)
4Gelest🇺🇸Hafnium Dimethylamide
5Strem Chemicals, Inc.🇺🇸Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder for CVD/ALD
6DOCK/CHEMICALS🇩🇪Tetrakis(dimethylamido)hafnium
7Sigma-Aldrich, Co. LLC🇺🇸Tetrakis(dimethylamido)hafnium(IV) 99.99%
8Ereztech🇺🇸Tetrakis(dimethylamino) hafnium(IV)
9Strem Chemicals, Inc.🇺🇸Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 75 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
2Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
3Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
4HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
5The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
6Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
7In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
8Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
9AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
10Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
11Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
12Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
13Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
14Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
15Nonvolatile Capacitive Crossbar Array for In-Memory Computing
16Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
17Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
18Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
19Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
20Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
21Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
22Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
23Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
24Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
25Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
26Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
27Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
28Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
29Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
30Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
31Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
32Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
33The effects of layering in ferroelectric Si-doped HfO2 thin films
34Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
35Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
36Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices
37Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
38Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
39Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
40Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
41Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
42Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
43Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
44Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
45A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
46A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
47TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
48Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
49Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
50Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
51Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
52Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
53A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
54Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
55Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
56Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
57On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
58ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies
59Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
60Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
61The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
62Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
63Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
64Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys
65High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
66Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
67Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
68Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
69Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
70Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
71Damage evaluation in graphene underlying atomic layer deposition dielectrics
72HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
73Annealing behavior of ferroelectric Si-doped HfO2 thin films
74Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
75Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements