TDMAH, TDMAHf, Tetrakis[DiMethylAmido]Hafnium, Tetrakis[DiMethylAmino]Hafnium, Hafnium Dimethylamide, [Me₂N]₄Hf, [(CH₃)₂N]₄Hf, also CAS# 19782-68-4, CAS# 19962-11-9

Informational Websites

Number	Website
1	https://pubchem.ncbi.nlm.nih.gov/compound/140609#section=Top

Where to buy

Number	Vendor	Link
1	Strem Chemicals, Inc.	Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH
2	Strem Chemicals, Inc.	Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder for CVD/ALD
3	Strem Chemicals, Inc.	Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder with high temperature valve for CVD/ALD
4	EpiValence	Hafnium dimethylamide
5	Sigma-Aldrich, Co. LLC	Tetrakis(dimethylamido)hafnium(IV) ≥99.99%
6	American Elements	Tetrakis(dimethylamido)hafnium(IV)
7	Apollo Scientific	Tetrakis(dimethylamino)hafnium(IV) 99.999%
8	Gelest	HAFNIUM DIMETHYLAMIDE
9	Ereztech	Tetrakis(dimethylamino)hafnium(IV) (99.99%-Hf (excluding Zr))

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 46 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
2	Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
3	Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
4	Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
5	HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
6	A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
7	A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
8	Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
9	Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
10	AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
11	Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
12	Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
13	Damage evaluation in graphene underlying atomic layer deposition dielectrics
14	Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
15	Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
16	Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
17	Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
18	Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
19	HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
20	High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
21	Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
22	Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
23	In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
24	Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
25	Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
26	Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
27	Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
28	Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
29	Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
30	Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
31	Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
32	Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
33	Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
34	Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
35	Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
36	Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
37	Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
38	HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
39	Annealing behavior of ferroelectric Si-doped HfO2 thin films
40	Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
41	Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
42	Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
43	Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
44	TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
45	The effects of layering in ferroelectric Si-doped HfO2 thin films
46	Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique

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