| 1 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 2 | Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping |
| 3 | Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition |
| 4 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 5 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
| 6 | Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition |
| 7 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 8 | A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems |
| 9 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
| 10 | Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing |
| 11 | Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics |
| 12 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
| 13 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
| 14 | Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition |
| 15 | Damage evaluation in graphene underlying atomic layer deposition dielectrics |
| 16 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
| 17 | Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2 |
| 18 | Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN |
| 19 | Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations |
| 20 | Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer |
| 21 | Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures |
| 22 | Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy |
| 23 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
| 24 | High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness |
| 25 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
| 26 | Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium |
| 27 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
| 28 | Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge |
| 29 | Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time |
| 30 | Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications |
| 31 | Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements |
| 32 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
| 33 | Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition |
| 34 | Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation |
| 35 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
| 36 | Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current |
| 37 | Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping |
| 38 | The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation |
| 39 | Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics |
| 40 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
| 41 | Using top graphene layer as sacrificial protection during dielectric atomic layer deposition |
| 42 | Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2 |
| 43 | Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics |
| 44 | Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas |
| 45 | Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations |
| 46 | Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers |
| 47 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
| 48 | The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation |
| 49 | Annealing behavior of ferroelectric Si-doped HfO2 thin films |
| 50 | Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3 |
| 51 | Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3 |
| 52 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
| 53 | Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes |
| 54 | Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition |
| 55 | TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films |
| 56 | The effects of layering in ferroelectric Si-doped HfO2 thin films |
| 57 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |