Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4, CAS# 19962-11-9

Informational Websites

NumberWebsite
1https://pubchem.ncbi.nlm.nih.gov/compound/140609#section=Top

Where to buy

NumberVendorRegionLink
1Strem Chemicals, Inc.🇺🇸Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder with high temperature valve for CVD/ALD
2Strem Chemicals, Inc.🇺🇸Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH
3Apollo Scientific🇬🇧Tetrakis(dimethylamino)hafnium(IV) 99.999%
4Ereztech🇺🇸Tetrakis(dimethylamino) hafnium(IV)
5Gelest🇺🇸Hafnium Dimethylamide
6Strem Chemicals, Inc.🇺🇸Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder for CVD/ALD
7American Elements🇺🇸Tetrakis(dimethylamido)hafnium(IV)
8DOCK/CHEMICALS🇩🇪Tetrakis(dimethylamido)hafnium
9Sigma-Aldrich, Co. LLC🇺🇸Tetrakis(dimethylamido)hafnium(IV) 99.99%

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 75 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
2AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
3Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
4Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
5Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
6Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
7Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
8Annealing behavior of ferroelectric Si-doped HfO2 thin films
9Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
10Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
11Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
12Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
13Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
14Nonvolatile Capacitive Crossbar Array for In-Memory Computing
15In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
16HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
17Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
18Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
19Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
20Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
21Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
22Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
23Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
24A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
25Damage evaluation in graphene underlying atomic layer deposition dielectrics
26Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
27Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys
28A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
29Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
30Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
31Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
32Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
33ALD and PEALD deposition of HfO2 and its effects on the nature of oxygen vacancies
34Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
35On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR
36Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
37HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
38Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
39High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
40Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
41Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
42Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes
43Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
44Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
45Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
46Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
47The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
48Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
49Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
50Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
51Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
52HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
53The effects of layering in ferroelectric Si-doped HfO2 thin films
54Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
55Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
56Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
57Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
58Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
59Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
60Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
61Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
62The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
63A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
64Electrical Properties of Atomic Layer Deposition HfO2 and HfOxNy on Si Substrates with Various Crystal Orientations
65TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
66Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
67Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
68Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
69Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
70Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
71Atomic scale nitrogen depth profile control during plasma enhanced atomic layer deposition of high k dielectrics
72Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
73Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
74Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices
75Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics