High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
Type:
Journal
Info:
APPLIED PHYSICS LETTERS 105, 222103 (2014)
Date:
2014-11-18
Author Information
| Name | Institution |
|---|---|
| Michael Barth | The Pennsylvania State University |
| G. Bruce Rayner, Jr. | Kurt J. Lesker Company |
| Stephen McDonnell | University of Texas at Dallas |
| Robert M. Wallace | University of Texas at Dallas |
| Brian R. Bennett | U.S. Naval Research Laboratory |
| Roman Engel-Herbert | The Pennsylvania State University |
| Suman Datta | The Pennsylvania State University |
Films
Other HfO2
Film/Plasma Properties
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interfacial Layer
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Substrates
| GaSb |
Notes
| GaSb substrates cleaned with acetone and IPA. Then HCl was used for native oxide removal. |
| Prior to HfO2 deposition, 10 cylces of TMA followed by 10 cycles of water was used to ensure hydroxylation of surface. |
| In situ forming gas anneal at 350C with 40sccm H2 and 110 sccm Ar. |
| Prior to thermal HfO2 deposition, the substrate surface was prepared with H2 plasma. |
| 152 |