Publication Information

Title:
High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
Type:
Journal
Info:
APPLIED PHYSICS LETTERS 105, 222103 (2014)
Date:
2014-11-18

Author Information

Name Institution
Michael BarthThe Pennsylvania State University
G. Bruce Rayner, Jr.Kurt J. Lesker Company
Stephen McDonnellUniversity of Texas at Dallas
Robert M. WallaceUniversity of Texas at Dallas
Brian R. BennettU.S. Naval Research Laboratory
Roman Engel-HerbertThe Pennsylvania State University
Suman DattaThe Pennsylvania State University

Films


Film/Plasma Properties

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interfacial Layer
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Substrates

GaSb

Keywords

Capacitors

Notes

GaSb substrates cleaned with acetone and IPA. Then HCl was used for native oxide removal.
Prior to HfO2 deposition, 10 cylces of TMA followed by 10 cycles of water was used to ensure hydroxylation of surface.
In situ forming gas anneal at 350C with 40sccm H2 and 110 sccm Ar.
Prior to thermal HfO2 deposition, the substrate surface was prepared with H2 plasma.
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