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Kurt J Lesker ALD-150LX Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications using Kurt J Lesker ALD-150LX hardware returned 12 records. If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A route to low temperature growth of single crystal GaN on sapphire
2Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
3High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
4Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
5Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
6Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition
7Plasma enhanced atomic layer deposition and laser plasma deposition of ultra-thin ZnO films for Schottky barrier devices
8Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition
9Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
10Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
11Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
12Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

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