Kurt J Lesker ALD-150LX Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications using Kurt J Lesker ALD-150LX hardware returned 17 records. If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A route to low temperature growth of single crystal GaN on sapphire
2AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
3Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
4Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
5High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
6Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
7Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
8Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition
9Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition
10Plasma enhanced atomic layer deposition and laser plasma deposition of ultra-thin ZnO films for Schottky barrier devices
11Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition
12Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
13Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
14Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
15Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
16Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization
17Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition