Kurt J Lesker ALD-150LX Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications using Kurt J Lesker ALD-150LX hardware returned 18 records. If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A route to low temperature growth of single crystal GaN on sapphire
2AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
3Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
4Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials
5Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
6High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
7Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
8Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
9Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition
10Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer Deposition
11Plasma enhanced atomic layer deposition and laser plasma deposition of ultra-thin ZnO films for Schottky barrier devices
12Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition
13Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
14Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
15Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
16Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
17Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization
18Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition