Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
Type:
Journal
Info:
RSC Adv., 2015, 5, 57865-57874
Date:
2015-06-25
Author Information
| Name | Institution |
|---|---|
| Pouyan Motamedi | University of Alberta |
| Kenneth C. Cadien | University of Alberta |
Films
Plasma GaN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Optical Properties
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Hall effect/van der Pauw method
Characteristic: Mobility
Analysis: Hall effect/van der Pauw method
Substrates
| Sapphire |
Notes
| 377 |