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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition

Type:
Journal
Info:
RSC Adv., 2015, 5, 57865-57874
Date:
2015-06-25
DOI:
http://dx.doi.org/10.1039/C5RA07709E

Author Information

Name Institution
Pouyan MotamediUniversity of Alberta
Kenneth C. CadienUniversity of Alberta

Films

Plasma GaN

Hardware used: Kurt J Lesker ALD-150LX
TEG, triethyl galium, GaEt3
CAS#: 1115-99-7
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range = 150-425C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Optical Properties
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension Edge

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall effect/van der Pauw method
Diagnostic: Nanometrics HL5500

Characteristic: Mobility
Analysis: Hall effect/van der Pauw method
Diagnostic: Nanometrics HL5500

Substrates

Sapphire

Notes

377