Publication Information

Title:
Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
Type:
Journal
Info:
RSC Adv., 2015, 5, 57865-57874
Date:
2015-06-25

Author Information

Name Institution
Pouyan MotamediUniversity of Alberta
Kenneth C. CadienUniversity of Alberta

Films

Plasma GaN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Optical Properties
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall effect/van der Pauw method

Characteristic: Mobility
Analysis: Hall effect/van der Pauw method

Substrates

Sapphire

Keywords

Notes

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