TEG, GaEt3, Triethyl Galium, CAS# 1115-99-7

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Triethylgallium, elec. gr. (99.9999%-Ga)

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 18 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
2The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
3Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
4A route to low temperature growth of single crystal GaN on sapphire
5Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
6Demonstration of flexible thin film transistors with GaN channels
7Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
8Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
9Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
10Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
11Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
12Self-Limiting Growth of GaN at Low Temperatures
13Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
14Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
15Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
16Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
17Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
18Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition


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