|1||Strem Chemicals, Inc.||Triethylgallium, elec. gr. (99.9999%-Ga)|
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Your search for publications using this chemistry returned 18 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.
|1||Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys|
|2||The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition|
|3||Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors|
|4||A route to low temperature growth of single crystal GaN on sapphire|
|5||Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition|
|6||Demonstration of flexible thin film transistors with GaN channels|
|7||Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition|
|8||Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions|
|9||Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition|
|10||Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition|
|11||Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys|
|12||Self-Limiting Growth of GaN at Low Temperatures|
|13||Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition|
|14||Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition|
|15||Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition|
|16||Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs|
|17||Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition|
|18||Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition|
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