Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Acta Metallurgica Sinica (English Letters) (2019) 32:1530-1536
Date:
2019-07-25
Author Information
| Name | Institution |
|---|---|
| Yingfeng He | University of Science and Technology Beijing |
| Meiling Li | University of Science and Technology Beijing |
| Sanjie Liu | University of Science and Technology Beijing |
| Huiyun Wei | University of Science and Technology Beijing |
| Huan-Yu Ye | University of Science and Technology Beijing |
| Yimeng Song | University of Science and Technology Beijing |
| Peng Qiu | University of Science and Technology Beijing |
| Yunlai An | University of Science and Technology Beijing |
| Mingzeng Peng | University of Science and Technology Beijing |
| Xinhe Zheng | University of Science and Technology Beijing |
Films
Plasma GaN
Film/Plasma Properties
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Stress
Analysis: XRD, X-Ray Diffraction
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Nucleation
Analysis: TEM, Transmission Electron Microscope
Characteristic: Raman Spectra
Analysis: Raman Spectroscopy
Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Substrates
| Graphene |
| SiO2 |
| Silicon |
Notes
| 1609 |