Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Acta Metallurgica Sinica (English Letters) (2019) 32:1530-1536
Date:
2019-07-25

Author Information

Name Institution
Yingfeng HeUniversity of Science and Technology Beijing
Meiling LiUniversity of Science and Technology Beijing
Sanjie LiuUniversity of Science and Technology Beijing
Huiyun WeiUniversity of Science and Technology Beijing
Huan-Yu YeUniversity of Science and Technology Beijing
Yimeng SongUniversity of Science and Technology Beijing
Peng QiuUniversity of Science and Technology Beijing
Yunlai AnUniversity of Science and Technology Beijing
Mingzeng PengUniversity of Science and Technology Beijing
Xinhe ZhengUniversity of Science and Technology Beijing

Films

Plasma GaN


Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Stress
Analysis: XRD, X-Ray Diffraction

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Nucleation
Analysis: TEM, Transmission Electron Microscope

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Substrates

Graphene
SiO2
Silicon

Keywords

Notes

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