Hydrogen, H2, CAS# 1333-74-0

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2Atmospheric pressure plasma enhanced spatial ALD of silver
3Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
7Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
8Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
9Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
10Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
11Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
12Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
13Radical Enhanced Atomic Layer Deposition of Metals and Oxides
14Study on the characteristics of aluminum thin films prepared by atomic layer deposition
15Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
16Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
17Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
18Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
19Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
20Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
21Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
22Atomic layer epitaxy for quantum well nitride-based devices
23ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
24AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
25Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
26Atomic layer epitaxy for quantum well nitride-based devices
27Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
28Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
29Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
30Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
31Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
32Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
33GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
34Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
35Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
36Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
37Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
38High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
39High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
40Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
41Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
42Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
43Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
44Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
45Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
46New materials for memristive switching
47Nitride memristors
48Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
49PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
50Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
51Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
52Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
53Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
54Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
55Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
56Structural and optical characterization of low-temperature ALD crystalline AlN
57The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
58XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
59Plasma enhanced atomic layer deposition of aluminum sulfide thin films
60Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
61Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
62Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
63Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
64Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
65Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
66Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
67Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
68Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
69Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
70Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
71Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
72High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
73Radical Enhanced Atomic Layer Deposition of Metals and Oxides
74Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
75Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
76Copper-ALD Seed Layer as an Enabler for Device Scaling
77Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
78Hydrogen plasma-enhanced atomic layer deposition of copper thin films
79Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
80Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
81Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
82Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
83Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
84PEALD of Copper using New Precursors for Next Generation of Interconnections
85Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
86Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
87Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
88A route to low temperature growth of single crystal GaN on sapphire
89Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
90Demonstration of flexible thin film transistors with GaN channels
91Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
92Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
93Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
94Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
95Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
96Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
97Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
98Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
99Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
100Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
101Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
102Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
103Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
104Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
105Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
106Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
107Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
108Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
109Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
110Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
111Gadolinium nitride films deposited using a PEALD based process
112Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
113Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
114Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
115Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
116Radical Enhanced Atomic Layer Deposition of Metals and Oxides
117Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
118HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
119Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
120Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
121High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
122Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
123The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
124HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
125Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
126Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
127Atomic layer epitaxy for quantum well nitride-based devices
128Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
129Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
130Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
131Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
132Radical Enhanced Atomic Layer Deposition of Metals and Oxides
133Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
134Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
135Radical Enhanced Atomic Layer Deposition of Metals and Oxides
136Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
137Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
138Atomic Layer Deposition of Niobium Nitride from Different Precursors
139Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
140Plasma-enhanced atomic layer deposition of superconducting niobium nitride
141Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
142Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
143Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
144Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
145Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
146Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
147Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
148Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
149Plasma-Enhanced Atomic Layer Deposition of Ni
150Radical Enhanced Atomic Layer Deposition of Metals and Oxides
151Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
152Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
153In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
154Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
155Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
156Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
157Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
158Remote Plasma ALD of Platinum and Platinum Oxide Films
159Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
160Room-Temperature Atomic Layer Deposition of Platinum
161Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
162In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
163Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
164Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
165Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
166Radical Enhanced Atomic Layer Deposition of Metals and Oxides
167Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
168Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
169In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
170Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
171Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
172Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
173Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
174Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
175Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
176Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
177Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
178Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
179Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
180Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
181Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
182A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
183Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
184Radical Enhanced Atomic Layer Deposition of Metals and Oxides
185In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
186Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
187A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
188Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
189Evaluation of plasma parameters on PEALD deposited TaCN
190Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
191Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
192Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
193Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
194The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
195A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
196Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
197Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
198Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
199Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
200Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
201Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
202Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
203Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
204Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
205The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
206Trilayer Tunnel Selectors for Memristor Memory Cells
207Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
208Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
209Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
210Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
211Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
212Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
213Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
214Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
215Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
216Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
217Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
218Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
219Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
220Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
221Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
222Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
223Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
224Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
225Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
226Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
227Fabrication and deformation of three-dimensional hollow ceramic nanostructures
228Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
229Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
230Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
231Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
232Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
233Microwave properties of superconducting atomic-layer deposited TiN films
234New materials for memristive switching
235Nitride memristors
236Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
237Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
238Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
239Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
240Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
241Radical Enhanced Atomic Layer Deposition of Metals and Oxides
242Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
243Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
244Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
245Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
246TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
247Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
248Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
249Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
250Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
251Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
252Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
253Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
254Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
255Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
256Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
257A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
258Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
259Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
260Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
261Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
262Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
263A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
264Plasma-enhanced atomic layer deposition of tungsten nitride
265Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
266Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
267WS2 transistors on 300 mm wafers with BEOL compatibility
268Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
269Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
270New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
271Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
272Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
273AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
274Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
275Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
276Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
277Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications


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