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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 454 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
2Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
3Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
4Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
5Nitride memristors
6Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
7Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
8Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
9Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
10Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
11Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
12Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
13Structural and optical characterization of low-temperature ALD crystalline AlN
14Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
15Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
16Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
17Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
18Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
19Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
20Atomic Layer Deposition of Nanolayered Carbon Films
21Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
22Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
23Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
24GeSbTe deposition for the PRAM application
25Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
26Radical Enhanced Atomic Layer Deposition of Metals and Oxides
27The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
28Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
29Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
30Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
31Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
32Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
33Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
34Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
35Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
36Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
37Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
38Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
39Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
40Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
41Atomic Layer Deposition of Niobium Nitride from Different Precursors
42Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
43Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
44Plasma-enhanced atomic layer deposition of tungsten nitride
45Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
46Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
47Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
48In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
49Radical Enhanced Atomic Layer Deposition of Metals and Oxides
50Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
51Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
52Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
53Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
54Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
55Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
56Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
57Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
58Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
59Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
60Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
61Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
62Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
63Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
64Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
65Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
66Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology
67Radical Enhanced Atomic Layer Deposition of Metals and Oxides
68Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
69New materials for memristive switching
70Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
71Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
72Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
73The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
74Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
75Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
76Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
77Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
78Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
79The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
80Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
81Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
82Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
83Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
84Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
85Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
86A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
87Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
88AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
89Plasma-Enhanced Atomic Layer Deposition of Ni
90Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
91Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors
92Plasma-Assisted Atomic Layer Deposition of Palladium
93Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
94Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
95Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
96Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution
97Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
98Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
99Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
100Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
101Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
102Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
103ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
104Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
105Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
106Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
107Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
108Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
109Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
110Formation of aluminum nitride thin films as gate dielectrics on Si(100)
111Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
112Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
113Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
114Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
115Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
116The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
117Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
118Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
119Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
120Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
121Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
122Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
123Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
124Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition
125Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
126Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
127Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
128Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
129Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
130Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
131Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
132Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
133GeSbTe deposition for the PRAM application
134A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
135Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
136Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
137Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
138Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
139Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
140Plasma enhanced atomic layer deposition of aluminum sulfide thin films
141The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
142AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
143Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
144Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
145Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
146Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition
147Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
148Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
149Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
150Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
151Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions
152Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
153Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
154Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
155Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
156PEALD of Copper using New Precursors for Next Generation of Interconnections
157Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
158Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
159GeSbTe deposition for the PRAM application
160Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
161Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
162Study on the characteristics of aluminum thin films prepared by atomic layer deposition
163Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
164Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
165Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
166GeSbTe deposition for the PRAM application
167Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
168Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
169Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
170Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
171Radical Enhanced Atomic Layer Deposition of Metals and Oxides
172Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
173High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
174Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices
175XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
176Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
177Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
178High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
179The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
180Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
181Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
182Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
183Atomic layer epitaxy of germanium
184Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
185Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
186Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
187Radical Enhanced Atomic Layer Deposition of Metals and Oxides
188Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
189Trilayer Tunnel Selectors for Memristor Memory Cells
190Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
191Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
192Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
193Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
194Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
195Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
196Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
197New materials for memristive switching
198Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
199Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
200Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
201Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
202The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
203Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
204Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
205Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
206In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
207Copper-ALD Seed Layer as an Enabler for Device Scaling
208Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
209Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
210Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
211Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
212Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
213Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films
214Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
215Film Uniformity in Atomic Layer Deposition
216Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
217Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting
218Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
219Nanowire single-photon detectors made of atomic layer-deposited niobium nitride
220Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
221Performance of Samples with Novel SRF Materials and Growth Techniques
222Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
223A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
224Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
225Plasma enhanced atomic layer deposition of Co thin film on Ï„-MnAl for effective magnetic exchange coupling and enhanced energy products
226Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
227Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
228Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
229In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
230Atomic layer epitaxy for quantum well nitride-based devices
231Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
232Atomic hydrogen-assisted ALE of germanium
233Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
234GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
235Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
236Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
237Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
238Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
239A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
240Room-Temperature Atomic Layer Deposition of Platinum
241Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition
242Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
243Nitride memristors
244Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
245Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
246Gadolinium nitride films deposited using a PEALD based process
247Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
248Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
249Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
250Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
251Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
252Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
253Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
254Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
255Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
256PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
257A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition
258Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
259Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
260Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
261Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
262TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
263TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
264Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
265Large-Scale Deposition and Growth Mechanism of Silver Nanoparticles by Plasma-Enhanced Atomic Layer Deposition
266Tuning size and coverage of Pd nanoparticles using atomic layer deposition
267Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
268Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
269Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
270Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
271Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
272Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
273Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
274Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
275A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
276Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
277Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
278Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
279Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
280Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
281Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
282Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
283Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
284Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
285Plasma-enhanced atomic layer deposition of superconducting niobium nitride
286Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
287P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
288Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
289The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
290Evaluation of plasma parameters on PEALD deposited TaCN
291In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
292Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
293Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
294Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
295Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
296Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
297Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
298A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
299In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
300In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition
301In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
302In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
303Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
304A route to low temperature growth of single crystal GaN on sapphire
305Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
306AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
307High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
308Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
309Self-limiting diamond growth from alternating CFx and H fluxes
310WS2 transistors on 300 mm wafers with BEOL compatibility
311Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
312Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
313Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
314Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
315Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
316Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
317Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
318Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
319Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
320Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
321Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
322Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
323Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
324Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
325Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
326Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
327Radical Enhanced Atomic Layer Deposition of Metals and Oxides
328Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
329Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
330In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications
331Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
332Atmospheric pressure plasma enhanced spatial ALD of silver
333High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
334Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition
335Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
336Fabrication and deformation of three-dimensional hollow ceramic nanostructures
337In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
338Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
339Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
340Sub-10-nm ferroelectric Gd-doped HfO2 layers
341Microwave properties of superconducting atomic-layer deposited TiN films
342HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
343High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
344Atomic layer epitaxy of Si using atomic H
345Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
346Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
347High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
348P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
349The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
350Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
351Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
352Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
353Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
354Radical Enhanced Atomic Layer Deposition of Metals and Oxides
355Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
356AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
357Sub-nanometer heating depth of atomic layer annealing
358Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
359Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
360Atomic layer epitaxy for quantum well nitride-based devices
361Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
362Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
363Plasma-enhanced atomic layer deposition of Co on metal surfaces
364Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride
365Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
366Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
367Remote Plasma ALD of Platinum and Platinum Oxide Films
368Island Coalescence during Film Growth: An Underestimated Limitation of Cu ALD
369Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
370Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
371Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
372Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
373Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
374Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
375Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
376Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
377Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
378Radical Enhanced Atomic Layer Deposition of Metals and Oxides
379Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
380Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
381Hydrogen plasma-enhanced atomic layer deposition of copper thin films
382Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
383Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
384Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces
385Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
386Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
387Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
388Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
389P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
390Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
391Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
392Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
393Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
394HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
395Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
396Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
397Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
398Atomic layer epitaxy for quantum well nitride-based devices
399ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
400Radical Enhanced Atomic Layer Deposition of Metals and Oxides
401Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
402Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
403Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
404Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
405Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
406Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
407Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
408A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
409Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
410Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
411Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
412Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor
413New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
414Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications