Hydrogen, H2, CAS# 1333-74-0

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2Atmospheric pressure plasma enhanced spatial ALD of silver
3Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
7Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
8Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
9Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
10Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
11Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
12Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
13Radical Enhanced Atomic Layer Deposition of Metals and Oxides
14Study on the characteristics of aluminum thin films prepared by atomic layer deposition
15Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
16Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
17Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
18Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
19Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
20Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
21Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
22Atomic layer epitaxy for quantum well nitride-based devices
23ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
24AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
25Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
26Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
27Atomic layer epitaxy for quantum well nitride-based devices
28Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
29Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
30Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
31Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
32Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
33Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
34GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
35Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
36Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
37Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
38Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
39Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
40High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
41High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
42Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
43Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
44Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
45Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
46Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
47Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
48New materials for memristive switching
49Nitride memristors
50Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
51PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
52Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
53Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
54Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
55Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
56Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
57Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
58Structural and optical characterization of low-temperature ALD crystalline AlN
59The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
60XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
61Plasma enhanced atomic layer deposition of aluminum sulfide thin films
62Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
63Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
64Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
65Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
66Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
67Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
68Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
69Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
70Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
71Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
72Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
73Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
74High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
75Radical Enhanced Atomic Layer Deposition of Metals and Oxides
76Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
77Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
78Copper-ALD Seed Layer as an Enabler for Device Scaling
79Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
80Hydrogen plasma-enhanced atomic layer deposition of copper thin films
81Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
82Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
83Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
84Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
85Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
86Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
87PEALD of Copper using New Precursors for Next Generation of Interconnections
88Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
89Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
90Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
91A route to low temperature growth of single crystal GaN on sapphire
92Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
93Demonstration of flexible thin film transistors with GaN channels
94Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
95Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
96Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
97Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
98Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
99Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
100Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
101Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
102Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
103Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
104Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
105Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
106Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
107Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
108Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
109Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
110Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
111Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
112Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
113Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
114Gadolinium nitride films deposited using a PEALD based process
115Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
116Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
117Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
118Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
119Radical Enhanced Atomic Layer Deposition of Metals and Oxides
120Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
121HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
122Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
123Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
124High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
125Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
126The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
127HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
128Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
129Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
130Atomic layer epitaxy for quantum well nitride-based devices
131Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
132Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
133Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
134Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
135Radical Enhanced Atomic Layer Deposition of Metals and Oxides
136Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
137Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
138Radical Enhanced Atomic Layer Deposition of Metals and Oxides
139Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
140Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
141Atomic Layer Deposition of Niobium Nitride from Different Precursors
142Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
143Plasma-enhanced atomic layer deposition of superconducting niobium nitride
144Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
145Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
146Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
147Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
148Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
149Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
150Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
151Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
152Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
153Plasma-Enhanced Atomic Layer Deposition of Ni
154Radical Enhanced Atomic Layer Deposition of Metals and Oxides
155Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
156Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
157In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
158Plasma-Assisted Atomic Layer Deposition of Palladium
159Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
160Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
161Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
162Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
163Remote Plasma ALD of Platinum and Platinum Oxide Films
164Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
165Room-Temperature Atomic Layer Deposition of Platinum
166Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
167In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
168Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
169Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
170Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
171Radical Enhanced Atomic Layer Deposition of Metals and Oxides
172Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
173Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
174In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
175Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
176Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
177Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
178Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
179Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
180Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
181Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
182Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
183Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
184Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
185Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
186Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
187Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
188Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
189A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
190Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
191Radical Enhanced Atomic Layer Deposition of Metals and Oxides
192In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
193Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
194A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
195Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
196Evaluation of plasma parameters on PEALD deposited TaCN
197Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
198Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
199Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
200Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
201The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
202A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
203Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
204Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
205Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
206Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
207Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
208Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
209Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
210Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
211Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
212The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
213Trilayer Tunnel Selectors for Memristor Memory Cells
214Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
215Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
216Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
217Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
218Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
219Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
220Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
221Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
222Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
223Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
224Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
225Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
226Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
227Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
228Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
229Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
230Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
231Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
232Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
233Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
234Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
235Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
236Fabrication and deformation of three-dimensional hollow ceramic nanostructures
237Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
238Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
239Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
240Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
241Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
242Microwave properties of superconducting atomic-layer deposited TiN films
243New materials for memristive switching
244Nitride memristors
245Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
246Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
247Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
248Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
249Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
250Radical Enhanced Atomic Layer Deposition of Metals and Oxides
251Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
252Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
253Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
254Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
255TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
256Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
257Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
258Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
259Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
260Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
261Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
262Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
263Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
264Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
265Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
266A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
267Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
268Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
269Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
270Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
271Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
272A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
273Plasma-enhanced atomic layer deposition of tungsten nitride
274Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
275Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
276WS2 transistors on 300 mm wafers with BEOL compatibility
277Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
278Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
279New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
280Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
281Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
282AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
283Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
284Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
285Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
286Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications


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