H2, Hydrogen, CAS# 1333-74-0

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2Atmospheric pressure plasma enhanced spatial ALD of silver
3Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
7Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
8Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
9Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
10Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
11Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
12Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
13Radical Enhanced Atomic Layer Deposition of Metals and Oxides
14Study on the characteristics of aluminum thin films prepared by atomic layer deposition
15Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
16Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
17Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
18Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
19Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
20Atomic layer epitaxy for quantum well nitride-based devices
21A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
22ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
23AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
24AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
25Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
26Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
27Atomic layer epitaxy for quantum well nitride-based devices
28Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
29Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
30Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
31Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
32Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
33Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
34Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
35Formation of aluminum nitride thin films as gate dielectrics on Si(100)
36GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
37Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
38Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
39Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
40Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
41Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
42High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
43High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
44Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
45Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
46Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
47New materials for memristive switching
48Nitride memristors
49PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
50Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
51Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
52Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
53Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
54Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
55Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
56Structural and optical characterization of low-temperature ALD crystalline AlN
57The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
58XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
59Plasma enhanced atomic layer deposition of aluminum sulfide thin films
60Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
61Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
62Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
63Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
64Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
65Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
66Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
67Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
68Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
69Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
70High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
71Radical Enhanced Atomic Layer Deposition of Metals and Oxides
72Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
73Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
74Copper-ALD Seed Layer as an Enabler for Device Scaling
75Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
76Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
77Hydrogen plasma-enhanced atomic layer deposition of copper thin films
78Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
79Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
80Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
81Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
82Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
83Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
84PEALD of Copper using New Precursors for Next Generation of Interconnections
85Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
86Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
87Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
88A route to low temperature growth of single crystal GaN on sapphire
89Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
90Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
91Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
92Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
93Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
94Gadolinium nitride films deposited using a PEALD based process
95GeSbTe deposition for the PRAM application
96Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
97GeSbTe deposition for the PRAM application
98Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
99Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
100Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
101Radical Enhanced Atomic Layer Deposition of Metals and Oxides
102Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
103Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
104HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
105Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
106Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
107Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
108Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
109Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
110High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
111Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
112Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
113The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
114HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
115Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
116Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
117Atomic layer epitaxy for quantum well nitride-based devices
118Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
119P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
120Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
121Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
122Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
123Radical Enhanced Atomic Layer Deposition of Metals and Oxides
124Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
125Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
126Radical Enhanced Atomic Layer Deposition of Metals and Oxides
127Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
128Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
129Atomic Layer Deposition of Niobium Nitride from Different Precursors
130Nanowire single-photon detectors made of atomic layer-deposited niobium nitride
131Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
132Plasma-enhanced atomic layer deposition of superconducting niobium nitride
133Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
134Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
135Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
136Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
137Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
138Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
139Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
140Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
141In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
142Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
143Plasma-Enhanced Atomic Layer Deposition of Ni
144Radical Enhanced Atomic Layer Deposition of Metals and Oxides
145Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
146Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
147Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
148In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
149Plasma-Assisted Atomic Layer Deposition of Palladium
150Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
151Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
152Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
153Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
154Remote Plasma ALD of Platinum and Platinum Oxide Films
155Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
156Room-Temperature Atomic Layer Deposition of Platinum
157Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
158In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
159Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
160Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
161Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
162Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
163Radical Enhanced Atomic Layer Deposition of Metals and Oxides
164Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
165Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
166Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
167In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
168Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
169Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
170Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
171GeSbTe deposition for the PRAM application
172Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
173Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
174Atomic layer epitaxy of Si using atomic H
175Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
176Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
177Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
178Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
179Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
180Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
181Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
182Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
183Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
184Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
185Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
186Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
187A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
188Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
189High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
190Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
191Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
192Radical Enhanced Atomic Layer Deposition of Metals and Oxides
193The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
194Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
195In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
196Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
197A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
198Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
199Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
200Evaluation of plasma parameters on PEALD deposited TaCN
201Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
202Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
203Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
204Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
205Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
206TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
207The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
208A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
209Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
210Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
211Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
212Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
213Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
214Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
215Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
216Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
217Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
218Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
219Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
220Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
221Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
222Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
223Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
224Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
225Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
226Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
227The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
228The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
229The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
230Trilayer Tunnel Selectors for Memristor Memory Cells
231GeSbTe deposition for the PRAM application
232Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
233Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
234Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
235Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
236Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
237Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
238Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
239Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
240Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
241Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
242Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
243Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
244Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
245Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
246Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
247Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
248Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
249Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
250Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
251Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
252Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
253Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
254Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
255Fabrication and deformation of three-dimensional hollow ceramic nanostructures
256Film Uniformity in Atomic Layer Deposition
257Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
258Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
259In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
260Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
261Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
262Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
263Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
264Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
265Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
266Microwave properties of superconducting atomic-layer deposited TiN films
267New materials for memristive switching
268Nitride memristors
269Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
270Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
271Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
272Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
273Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
274Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
275Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
276Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
277Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
278Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
279Radical Enhanced Atomic Layer Deposition of Metals and Oxides
280Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
281Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
282Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
283Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
284Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
285TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
286Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
287Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
288Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
289Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
290Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
291Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
292Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
293Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
294Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
295Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
296Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
297Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
298A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
299Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
300Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
301Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
302Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
303Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
304A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
305Plasma-enhanced atomic layer deposition of tungsten nitride
306Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
307Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
308Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
309WS2 transistors on 300 mm wafers with BEOL compatibility
310Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
311Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
312Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
313New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
314P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
315Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
316P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
317Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
318Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
319AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
320Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
321Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
322Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
323Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
324Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
325ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
326Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition


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