H2, Hydrogen, CAS# 1333-74-0

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2Atmospheric pressure plasma enhanced spatial ALD of silver
3Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
7Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
8Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
9Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
10Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
11Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
12Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
13Radical Enhanced Atomic Layer Deposition of Metals and Oxides
14Study on the characteristics of aluminum thin films prepared by atomic layer deposition
15Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
16Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
17Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
18Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
19Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
20Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
21Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
22Atomic layer epitaxy for quantum well nitride-based devices
23ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
24AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
25Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
26Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
27Atomic layer epitaxy for quantum well nitride-based devices
28Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
29Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
30Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
31Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
32Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
33Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
34Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
35Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
36Formation of aluminum nitride thin films as gate dielectrics on Si(100)
37GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
38Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
39Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
40Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
41Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
42Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
43Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
44High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
45High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
46Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
47Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
48Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
49Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
50Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
51Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
52New materials for memristive switching
53Nitride memristors
54Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
55PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
56Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
57Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
58Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
59Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
60Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
61Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow-cathode plasma-assisted atomic layer deposition
62Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
63Structural and optical characterization of low-temperature ALD crystalline AlN
64The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
65XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
66Plasma enhanced atomic layer deposition of aluminum sulfide thin films
67Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
68Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
69Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
70Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
71Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
72Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
73Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
74Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
75Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
76Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
77Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
78Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
79High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
80Radical Enhanced Atomic Layer Deposition of Metals and Oxides
81Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
82Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
83Copper-ALD Seed Layer as an Enabler for Device Scaling
84Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
85Hydrogen plasma-enhanced atomic layer deposition of copper thin films
86Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
87Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
88Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
89Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
90Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
91Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
92PEALD of Copper using New Precursors for Next Generation of Interconnections
93Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
94Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
95Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
96A route to low temperature growth of single crystal GaN on sapphire
97Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
98Demonstration of flexible thin film transistors with GaN channels
99Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
100Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
101Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
102Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
103Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
104Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
105Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
106Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
107Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
108Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
109Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
110Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
111Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
112Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
113Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
114Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
115Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
116Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
117Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
118Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
119Gadolinium nitride films deposited using a PEALD based process
120Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
121Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
122Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
123Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
124Radical Enhanced Atomic Layer Deposition of Metals and Oxides
125Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
126Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
127HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
128Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
129Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
130Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
131Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
132High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
133Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
134Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
135The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
136HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
137Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
138Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
139Atomic layer epitaxy for quantum well nitride-based devices
140Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
141Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
142Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
143Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
144Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
145Radical Enhanced Atomic Layer Deposition of Metals and Oxides
146Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
147Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
148Radical Enhanced Atomic Layer Deposition of Metals and Oxides
149Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
150Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
151Atomic Layer Deposition of Niobium Nitride from Different Precursors
152Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
153Plasma-enhanced atomic layer deposition of superconducting niobium nitride
154Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
155Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
156Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
157Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
158Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
159Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
160Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
161Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
162In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
163Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
164Plasma-Enhanced Atomic Layer Deposition of Ni
165Radical Enhanced Atomic Layer Deposition of Metals and Oxides
166Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
167Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
168In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
169Plasma-Assisted Atomic Layer Deposition of Palladium
170Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
171Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
172Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
173Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
174Remote Plasma ALD of Platinum and Platinum Oxide Films
175Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
176Room-Temperature Atomic Layer Deposition of Platinum
177Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
178In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
179Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
180Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
181Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
182Radical Enhanced Atomic Layer Deposition of Metals and Oxides
183Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
184Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
185In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
186Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
187Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
188Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
189Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
190Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
191Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
192Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
193Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
194Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
195Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
196Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
197Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
198Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
199Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
200Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
201A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
202Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
203High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
204Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
205Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
206Radical Enhanced Atomic Layer Deposition of Metals and Oxides
207The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
208Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
209In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
210Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
211A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
212Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
213Evaluation of plasma parameters on PEALD deposited TaCN
214Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
215Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
216Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
217Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
218The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
219A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
220Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
221Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
222Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
223Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
224Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
225Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
226Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
227Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
228Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
229Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
230Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
231Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
232Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
233Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
234Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
235Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
236The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
237The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
238The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
239Trilayer Tunnel Selectors for Memristor Memory Cells
240Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
241Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
242Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
243Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
244Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
245Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
246Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
247Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
248Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
249Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
250Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
251Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
252Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
253Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
254Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
255Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
256Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
257Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
258Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
259Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
260Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
261Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
262Fabrication and deformation of three-dimensional hollow ceramic nanostructures
263Film Uniformity in Atomic Layer Deposition
264Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
265Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
266In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
267Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
268Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
269Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
270Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
271Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
272Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
273Microwave properties of superconducting atomic-layer deposited TiN films
274New materials for memristive switching
275Nitride memristors
276Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
277Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
278Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
279Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
280Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
281Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
282Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
283Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
284Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
285Radical Enhanced Atomic Layer Deposition of Metals and Oxides
286Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
287Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
288Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
289Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
290Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
291TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
292Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
293Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
294Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
295Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
296Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
297Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
298Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
299Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
300Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
301Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
302Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
303A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
304Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
305Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
306Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
307Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
308Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
309A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
310Plasma-enhanced atomic layer deposition of tungsten nitride
311Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
312Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
313WS2 transistors on 300 mm wafers with BEOL compatibility
314Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
315Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
316New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
317Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
318Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
319Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
320AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
321Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
322Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
323Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
324Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
325Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
326ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
327Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition


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