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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 420 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2Atmospheric pressure plasma enhanced spatial ALD of silver
3Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
7Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
8Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
9Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
10Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
11Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
12Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
13Radical Enhanced Atomic Layer Deposition of Metals and Oxides
14Study on the characteristics of aluminum thin films prepared by atomic layer deposition
15Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
16Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
17Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
18Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
19Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
20Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
21Atomic layer epitaxy for quantum well nitride-based devices
22A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
23A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
24ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
25AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
26AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
27AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
28Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
29Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
30Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
31Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
32Atomic layer epitaxy for quantum well nitride-based devices
33Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
34Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
35Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
36Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
37Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
38Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
39Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
40Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
41Formation of aluminum nitride thin films as gate dielectrics on Si(100)
42GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
43Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
44Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
45Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
46Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
47Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
48High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
49High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
50Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
51Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
52Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
53Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
54New materials for memristive switching
55Nitride memristors
56PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
57Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
58Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
59Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
60Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
61Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
62Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
63Structural and optical characterization of low-temperature ALD crystalline AlN
64Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
65The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
66XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
67Plasma enhanced atomic layer deposition of aluminum sulfide thin films
68Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
69Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
70Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
71Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
72Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
73Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
74Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
75In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
76Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
77Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
78Plasma-enhanced atomic layer deposition of Co on metal surfaces
79Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
80High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
81In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
82Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting
83Radical Enhanced Atomic Layer Deposition of Metals and Oxides
84Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
85Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
86Copper-ALD Seed Layer as an Enabler for Device Scaling
87Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
88Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
89Hydrogen plasma-enhanced atomic layer deposition of copper thin films
90Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
91Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
92Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
93Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
94Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
95Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
96PEALD of Copper using New Precursors for Next Generation of Interconnections
97Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
98Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
99Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
100Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
101Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
102Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
103A route to low temperature growth of single crystal GaN on sapphire
104Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
105Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
106Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
107Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
108Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
109Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
110Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
111Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
112Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
113Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
114Gadolinium nitride films deposited using a PEALD based process
115Atomic hydrogen-assisted ALE of germanium
116Atomic layer epitaxy of germanium
117GeSbTe deposition for the PRAM application
118Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
119GeSbTe deposition for the PRAM application
120Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
121Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
122Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
123Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
124Radical Enhanced Atomic Layer Deposition of Metals and Oxides
125Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions
126Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
127Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
128Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
129HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
130Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
131Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
132Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
133Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
134Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
135Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
136High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
137Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
138Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
139The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
140HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
141Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
142Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
143Atomic layer epitaxy for quantum well nitride-based devices
144Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
145The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
146P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
147Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
148Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
149Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
150Radical Enhanced Atomic Layer Deposition of Metals and Oxides
151Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
152Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
153Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
154Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
155Radical Enhanced Atomic Layer Deposition of Metals and Oxides
156Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
157Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
158Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
159Atomic Layer Deposition of Niobium Nitride from Different Precursors
160Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
161Nanowire single-photon detectors made of atomic layer-deposited niobium nitride
162Performance of Samples with Novel SRF Materials and Growth Techniques
163Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
164Plasma-enhanced atomic layer deposition of superconducting niobium nitride
165Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
166Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
167Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
168Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
169Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
170Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices
171Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
172Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
173Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
174Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
175In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
176Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
177Plasma-Enhanced Atomic Layer Deposition of Ni
178Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
179Radical Enhanced Atomic Layer Deposition of Metals and Oxides
180Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
181Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
182Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
183In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
184Plasma-Assisted Atomic Layer Deposition of Palladium
185Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
186Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
187Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
188Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
189Remote Plasma ALD of Platinum and Platinum Oxide Films
190Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
191Room-Temperature Atomic Layer Deposition of Platinum
192Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
193In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
194Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
195Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
196Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
197Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
198Radical Enhanced Atomic Layer Deposition of Metals and Oxides
199Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
200Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
201Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
202In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
203Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
204Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
205Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
206GeSbTe deposition for the PRAM application
207Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
208Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
209Atomic layer epitaxy of Si using atomic H
210Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
211Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
212Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
213Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
214Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
215Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
216Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
217Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
218Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
219Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
220Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
221Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
222Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
223Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
224A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
225Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
226High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
227Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
228Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
229Radical Enhanced Atomic Layer Deposition of Metals and Oxides
230The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
231Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
232In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
233Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
234A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
235Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
236Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
237Evaluation of plasma parameters on PEALD deposited TaCN
238Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
239Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
240In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition
241Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
242Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
243Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
244TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
245The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
246A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
247Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
248Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
249Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
250Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
251Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
252High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
253Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
254Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
255Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
256Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
257Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
258Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
259Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
260Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
261Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
262Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
263Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
264Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
265Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
266Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
267The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
268The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
269The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
270Trilayer Tunnel Selectors for Memristor Memory Cells
271GeSbTe deposition for the PRAM application
272Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
273Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
274Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
275Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
276Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
277Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
278Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
279Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
280Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
281Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
282Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
283Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
284Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
285Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
286Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
287Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
288Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
289Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
290Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
291Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
292Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
293Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
294Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
295Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
296Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
297Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
298Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
299Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
300Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
301Fabrication and deformation of three-dimensional hollow ceramic nanostructures
302Film Uniformity in Atomic Layer Deposition
303Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
304Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
305In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
306Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
307Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
308Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
309Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
310Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
311Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
312Microwave properties of superconducting atomic-layer deposited TiN films
313New materials for memristive switching
314Nitride memristors
315Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
316Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
317Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
318Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
319Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
320Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
321Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
322Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
323Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
324Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
325Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
326Radical Enhanced Atomic Layer Deposition of Metals and Oxides
327Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
328Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
329Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
330Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
331Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
332TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
333Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
334Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
335Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
336Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
337Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
338Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
339Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
340Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
341Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
342Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
343Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
344Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
345Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
346Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
347Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
348Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
349A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
350Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
351Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
352Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
353Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
354Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
355A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
356Plasma-enhanced atomic layer deposition of tungsten nitride
357Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution
358Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
359Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
360Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
361Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
362WS2 transistors on 300 mm wafers with BEOL compatibility
363Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
364Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
365Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
366New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
367P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
368Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
369P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
370Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
371Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
372AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
373Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
374Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
375Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
376Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
377Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
378Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
379ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
380Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition