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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 461 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
2Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
3Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
4Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
5Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
6Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
7Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
8Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
9The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
10Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
11Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
12Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
13Sub-nanometer heating depth of atomic layer annealing
14Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
15Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
16Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
17Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
18Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
19The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
20Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
21ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
22P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
23Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
24Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
25Radical Enhanced Atomic Layer Deposition of Metals and Oxides
26Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
27Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
28GeSbTe deposition for the PRAM application
29Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
30Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
31In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
32Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition
33A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
34Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
35Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
36Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
37Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
38Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
39Evaluation of plasma parameters on PEALD deposited TaCN
40Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
41Remote Plasma ALD of Platinum and Platinum Oxide Films
42RF Characterization of Novel Superconducting Materials and Multilayers
43Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
44ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
45Nitride memristors
46Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
47Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
48The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
49Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
50Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
51Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
52Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
53Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
54Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
55Film Uniformity in Atomic Layer Deposition
56Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
57Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
58Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
59Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100°C through Control of Plasma Chemistry
60Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
61Tuning size and coverage of Pd nanoparticles using atomic layer deposition
62Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
63Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
64Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
65Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
66Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
67Copper-ALD Seed Layer as an Enabler for Device Scaling
68Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
69Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
70Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
71Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
72Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
73Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
74A route to low temperature growth of single crystal GaN on sapphire
75P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
76Room-Temperature Atomic Layer Deposition of Platinum
77Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
78Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
79A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
80Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
81Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
82In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
83Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
84Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
85Atomic layer epitaxy of germanium
86Atomic layer epitaxy for quantum well nitride-based devices
87Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
88Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
89Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
90TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
91Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
92Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
93Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
94Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
95Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
96Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
97XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
98TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
99Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
100Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
101Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
102Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
103Hydrogen plasma-enhanced atomic layer deposition of copper thin films
104Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
105Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
106Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
107Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
108Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
109Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
110Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
111Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
112Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
113In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications
114Atomic hydrogen-assisted ALE of germanium
115High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
116Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
117Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
118Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
119Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
120Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
121Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
122Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
123Trilayer Tunnel Selectors for Memristor Memory Cells
124Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
125Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
126Gadolinium nitride films deposited using a PEALD based process
127Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
128Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
129AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
130Plasma-enhanced atomic layer deposition of tungsten nitride
131Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
132Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
133Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
134Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
135Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
136Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
137Study on the characteristics of aluminum thin films prepared by atomic layer deposition
138In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
139Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
140Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
141Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
142Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
143A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
144Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
145High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
146Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
147Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
148PEALD of Copper using New Precursors for Next Generation of Interconnections
149Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
150Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
151Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
152Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
153Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
154Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
155The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
156Formation of aluminum nitride thin films as gate dielectrics on Si(100)
157Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting
158Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
159Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
160Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films
161Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
162Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
163Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
164Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
165Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
166The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
167New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
168Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
169Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
170Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
171A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
172Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
173Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
174Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
175The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
176Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
177Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
178High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
179Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
180Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
181Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
182Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
183Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
184Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
185Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
186Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
187Atomic layer epitaxy for quantum well nitride-based devices
188Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
189Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
190Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
191Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
192Atomic layer epitaxy of Si using atomic H
193Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
194Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
195High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
196Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
197Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition
198Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
199Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
200Sub-10-nm ferroelectric Gd-doped HfO2 layers
201Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
202Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
203Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
204Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
205Self-limiting diamond growth from alternating CFx and H fluxes
206Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
207The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
208Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
209Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
210Radical Enhanced Atomic Layer Deposition of Metals and Oxides
211Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
212Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
213Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
214Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
215New materials for memristive switching
216Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
217Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
218Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
219Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition
220Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
221Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
222GeSbTe deposition for the PRAM application
223Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
224Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
225Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
226Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
227In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
228Plasma enhanced atomic layer deposition of aluminum sulfide thin films
229Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
230Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
231Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
232Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
233Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
234Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
235Plasma-enhanced atomic layer deposition of Co on metal surfaces
236Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
237Microwave properties of superconducting atomic-layer deposited TiN films
238Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
239Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
240Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
241Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
242Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
243Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
244Nitride memristors
245Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
246Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
247In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition
248Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
249Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
250Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
251WS2 transistors on 300 mm wafers with BEOL compatibility
252Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
253RF Characterization of Novel Superconducting Materials and Multilayers
254Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
255AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
256Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
257Atomic Layer Deposition of Niobium Nitride from Different Precursors
258Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
259A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
260Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
261Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
262In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
263P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
264Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
265Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100°C through Control of Plasma Chemistry
266Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
267Island Coalescence during Film Growth: An Underestimated Limitation of Cu ALD
268Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
269High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
270Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition
271Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
272Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
273In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
274Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
275Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
276Radical Enhanced Atomic Layer Deposition of Metals and Oxides
277Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
278Structural and optical characterization of low-temperature ALD crystalline AlN
279Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
280Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
281Radical Enhanced Atomic Layer Deposition of Metals and Oxides
282Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
283Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
284Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
285Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
286Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
287Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
288Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
289Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100°C through Control of Plasma Chemistry
290Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
291Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
292Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
293Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
294A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition
295Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
296Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
297Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
298Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
299Shuffling Atomic Layer Deposition Gas Sequences to Modulate Bimetallic Thin Films and Nanoparticle Properties
300Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
301A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
302Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
303Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
304Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
305Nanowire single-photon detectors made of atomic layer-deposited niobium nitride
306Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
307Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
308Radical Enhanced Atomic Layer Deposition of Metals and Oxides
309HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
310Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
311Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
312Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
313Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
314Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
315Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
316Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
317Radical Enhanced Atomic Layer Deposition of Metals and Oxides
318Plasma-Enhanced Atomic Layer Deposition of Ni
319Atomic Layer Deposition of Nanolayered Carbon Films
320Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
321Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
322In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
323Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
324Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
325Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
326HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
327Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
328AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
329Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
330High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
331Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
332Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
333Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
334Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors
335Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films
336Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
337Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
338AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
339Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
340Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
341Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor
342Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
343GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
344Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
345Radical Enhanced Atomic Layer Deposition of Metals and Oxides
346Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
347Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology
348Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
349Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
350Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
351Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution
352The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
353Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
354Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
355In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
356Atomic layer epitaxy for quantum well nitride-based devices
357Plasma-enhanced atomic layer deposition of superconducting niobium nitride
358Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
359Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
360Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
361A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
362Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
363Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
364Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
365Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
366Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
367Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
368Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
369Atmospheric pressure plasma enhanced spatial ALD of silver
370Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
371Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
372Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
373GeSbTe deposition for the PRAM application
374Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
375Fabrication and deformation of three-dimensional hollow ceramic nanostructures
376Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
377Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
378Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
379Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
380Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
381Radical Enhanced Atomic Layer Deposition of Metals and Oxides
382Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
383Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
384New materials for memristive switching
385Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
386Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
387Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions
388Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
389Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
390Radical Enhanced Atomic Layer Deposition of Metals and Oxides
391Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
392Plasma-Assisted Atomic Layer Deposition of Palladium
393Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
394Plasma enhanced atomic layer deposition of Co thin film on Ï„-MnAl for effective magnetic exchange coupling and enhanced energy products
395Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
396Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
397Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
398Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
399Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
400Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
401Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
402Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
403Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride
404The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
405Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
406Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
407Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
408Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
409Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
410Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
411Performance of Samples with Novel SRF Materials and Growth Techniques
412Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
413Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces
414GeSbTe deposition for the PRAM application
415Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
416Large-Scale Deposition and Growth Mechanism of Silver Nanoparticles by Plasma-Enhanced Atomic Layer Deposition
417Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices
418Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
419PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
420Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
421Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films