Hydrogen, H₂, CAS# 1333-74-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 273 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2	Atmospheric pressure plasma enhanced spatial ALD of silver
3	Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4	Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5	Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6	Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
7	Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
8	Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
9	Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
10	Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
11	Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
12	Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
13	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
14	Study on the characteristics of aluminum thin films prepared by atomic layer deposition
15	Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
16	Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
17	Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
18	Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
19	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
20	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
21	Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
22	Atomic layer epitaxy for quantum well nitride-based devices
23	ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
24	AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
25	Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
26	Atomic layer epitaxy for quantum well nitride-based devices
27	Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
28	Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
29	Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
30	Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
31	Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
32	Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
33	GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
34	Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
35	Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
36	Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
37	Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
38	High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
39	High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
40	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
41	Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
42	Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
43	Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
44	Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
45	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
46	New materials for memristive switching
47	Nitride memristors
48	Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
49	PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
50	Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
51	Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
52	Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
53	Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
54	Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
55	Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
56	Structural and optical characterization of low-temperature ALD crystalline AlN
57	The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
58	XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
59	Plasma enhanced atomic layer deposition of aluminum sulfide thin films
60	Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
61	Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
62	Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
63	Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
64	Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
65	Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
66	Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
67	Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
68	Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
69	Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
70	Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
71	Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
72	High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
73	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
74	Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
75	Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
76	Copper-ALD Seed Layer as an Enabler for Device Scaling
77	Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
78	Hydrogen plasma-enhanced atomic layer deposition of copper thin films
79	Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
80	Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
81	Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
82	Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
83	PEALD of Copper using New Precursors for Next Generation of Interconnections
84	Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
85	Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
86	Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
87	A route to low temperature growth of single crystal GaN on sapphire
88	Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
89	Demonstration of flexible thin film transistors with GaN channels
90	Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
91	Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
92	Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
93	Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
94	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
95	Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
96	Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
97	Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
98	Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
99	Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
100	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
101	Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
102	Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
103	Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
104	Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
105	Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
106	Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
107	Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
108	Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
109	Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
110	Gadolinium nitride films deposited using a PEALD based process
111	Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
112	Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
113	Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
114	Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
115	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
116	Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
117	HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
118	Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
119	Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
120	High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
121	Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
122	The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
123	HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
124	Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
125	Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
126	Atomic layer epitaxy for quantum well nitride-based devices
127	Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
128	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
129	Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
130	Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
131	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
132	Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
133	Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
134	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
135	Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
136	Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
137	Atomic Layer Deposition of Niobium Nitride from Different Precursors
138	Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
139	Plasma-enhanced atomic layer deposition of superconducting niobium nitride
140	Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
141	Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
142	Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
143	Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
144	Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
145	Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
146	Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
147	Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
148	Plasma-Enhanced Atomic Layer Deposition of Ni
149	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
150	Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
151	Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
152	In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
153	Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
154	Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
155	Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
156	Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
157	Remote Plasma ALD of Platinum and Platinum Oxide Films
158	Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
159	Room-Temperature Atomic Layer Deposition of Platinum
160	Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
161	In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
162	Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
163	Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
164	Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
165	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
166	Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
167	Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
168	In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
169	Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
170	Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
171	Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
172	Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
173	Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
174	Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
175	Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
176	Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
177	Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
178	Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
179	Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
180	Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
181	Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
182	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
183	In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
184	Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
185	A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
186	Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
187	Evaluation of plasma parameters on PEALD deposited TaCN
188	Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
189	Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
190	Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
191	Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
192	The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
193	Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
194	Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
195	Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
196	Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
197	Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
198	Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
199	Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
200	Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
201	The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
202	Trilayer Tunnel Selectors for Memristor Memory Cells
203	Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
204	Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
205	Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
206	Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
207	Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
208	Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
209	Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
210	Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
211	Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
212	Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
213	Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
214	Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
215	Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
216	Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
217	Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
218	Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
219	Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
220	Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
221	Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
222	Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
223	Fabrication and deformation of three-dimensional hollow ceramic nanostructures
224	Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
225	Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
226	Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
227	Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
228	Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
229	Microwave properties of superconducting atomic-layer deposited TiN films
230	New materials for memristive switching
231	Nitride memristors
232	Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
233	Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
234	Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
235	Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
236	Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
237	Radical Enhanced Atomic Layer Deposition of Metals and Oxides
238	Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
239	Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
240	Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
241	Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
242	TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
243	Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
244	Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
245	Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
246	Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
247	Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
248	Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
249	Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
250	Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
251	Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
252	Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
253	A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
254	Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
255	Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
256	Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
257	Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
258	Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
259	A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
260	Plasma-enhanced atomic layer deposition of tungsten nitride
261	Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
262	Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
263	WS2 transistors on 300 mm wafers with BEOL compatibility
264	Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
265	Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
266	New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
267	Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
268	Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
269	AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
270	Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
271	Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
272	Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
273	Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications

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