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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 431 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2Atmospheric pressure plasma enhanced spatial ALD of silver
3Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
7Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
8Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
9Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
10Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
11Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
12Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
13Radical Enhanced Atomic Layer Deposition of Metals and Oxides
14Study on the characteristics of aluminum thin films prepared by atomic layer deposition
15Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
16Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
17Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
18Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
19Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
20Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
21Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
22Atomic layer epitaxy for quantum well nitride-based devices
23A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
24A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
25ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
26AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
27AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
28AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
29Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
30Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
31Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
32Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
33Atomic layer epitaxy for quantum well nitride-based devices
34Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
35Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
36Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
37Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
38Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
39Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
40Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
41Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
42Formation of aluminum nitride thin films as gate dielectrics on Si(100)
43GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
44Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
45Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
46Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
47Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
48Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
49High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
50High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
51Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
52Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
53Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
54Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
55New materials for memristive switching
56Nitride memristors
57PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
58Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
59Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
60Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
61Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
62Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
63Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
64Structural and optical characterization of low-temperature ALD crystalline AlN
65Sub-nanometer heating depth of atomic layer annealing
66Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
67The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
68XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
69Plasma enhanced atomic layer deposition of aluminum sulfide thin films
70Atomic Layer Deposition of Nanolayered Carbon Films
71Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
72Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
73Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
74Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
75Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
76Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
77Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
78In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
79Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
80Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
81Plasma-enhanced atomic layer deposition of Co on metal surfaces
82Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
83High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
84In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
85Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting
86Radical Enhanced Atomic Layer Deposition of Metals and Oxides
87Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
88Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
89Copper-ALD Seed Layer as an Enabler for Device Scaling
90Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
91Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
92Hydrogen plasma-enhanced atomic layer deposition of copper thin films
93Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
94Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
95Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
96Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
97Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
98Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
99PEALD of Copper using New Precursors for Next Generation of Interconnections
100Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
101Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
102Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
103Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
104Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
105Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
106A route to low temperature growth of single crystal GaN on sapphire
107Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
108Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
109Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
110Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
111Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
112Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
113Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
114Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
115Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
116Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
117Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
118Gadolinium nitride films deposited using a PEALD based process
119Atomic hydrogen-assisted ALE of germanium
120Atomic layer epitaxy of germanium
121GeSbTe deposition for the PRAM application
122Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
123GeSbTe deposition for the PRAM application
124Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
125Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
126Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
127Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
128Radical Enhanced Atomic Layer Deposition of Metals and Oxides
129Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions
130Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
131Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
132Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
133HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
134Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
135Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
136Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
137Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
138Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
139Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
140High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
141Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
142Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
143The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
144HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
145Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
146Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
147Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
148Atomic layer epitaxy for quantum well nitride-based devices
149Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
150The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
151P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
152Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
153Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
154Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
155Radical Enhanced Atomic Layer Deposition of Metals and Oxides
156Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
157Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
158Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
159Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
160Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition
161Radical Enhanced Atomic Layer Deposition of Metals and Oxides
162Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
163In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications
164Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
165Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
166Atomic Layer Deposition of Niobium Nitride from Different Precursors
167Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
168Nanowire single-photon detectors made of atomic layer-deposited niobium nitride
169Performance of Samples with Novel SRF Materials and Growth Techniques
170Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
171Plasma-enhanced atomic layer deposition of superconducting niobium nitride
172Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
173Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
174Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
175Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
176Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
177Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices
178Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
179Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
180Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
181Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
182In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
183Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
184Plasma-Enhanced Atomic Layer Deposition of Ni
185Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
186Radical Enhanced Atomic Layer Deposition of Metals and Oxides
187Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
188Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition
189Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
190Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
191In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
192Plasma-Assisted Atomic Layer Deposition of Palladium
193Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
194Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
195Tuning size and coverage of Pd nanoparticles using atomic layer deposition
196Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
197Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
198Remote Plasma ALD of Platinum and Platinum Oxide Films
199Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
200Room-Temperature Atomic Layer Deposition of Platinum
201Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
202In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
203Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
204Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
205Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
206Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
207Radical Enhanced Atomic Layer Deposition of Metals and Oxides
208Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
209Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
210Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
211In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
212Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
213Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
214Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
215GeSbTe deposition for the PRAM application
216Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
217Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
218Atomic layer epitaxy of Si using atomic H
219Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
220Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
221Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
222Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
223Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
224Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces
225Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
226Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
227Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
228Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
229Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
230Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
231Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
232Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
233Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
234Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
235A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
236Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
237High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
238Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
239Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
240Radical Enhanced Atomic Layer Deposition of Metals and Oxides
241The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
242Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
243In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
244Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
245A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
246Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
247Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
248Evaluation of plasma parameters on PEALD deposited TaCN
249Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
250Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
251In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition
252Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
253Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
254Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
255TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
256The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
257A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
258Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
259Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
260Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
261Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
262Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
263High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
264Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
265Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
266Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
267Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
268Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
269Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
270Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
271Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
272Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
273Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
274Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
275Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
276Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
277Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
278The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
279The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
280The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
281Trilayer Tunnel Selectors for Memristor Memory Cells
282GeSbTe deposition for the PRAM application
283Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
284Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
285Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
286Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
287Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
288Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
289Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
290Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
291Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
292Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
293Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
294Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
295Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
296Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
297Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
298Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
299Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
300Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
301Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
302Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
303Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
304Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
305Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
306Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
307Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
308Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
309Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
310Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
311Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
312Fabrication and deformation of three-dimensional hollow ceramic nanostructures
313Film Uniformity in Atomic Layer Deposition
314Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
315Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
316In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
317Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
318Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
319Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
320Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
321Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
322Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
323Microwave properties of superconducting atomic-layer deposited TiN films
324New materials for memristive switching
325Nitride memristors
326Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
327Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
328Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
329Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
330Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
331Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
332Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
333Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
334Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
335Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
336Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
337Radical Enhanced Atomic Layer Deposition of Metals and Oxides
338Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
339Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
340Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
341Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
342Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
343TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
344Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
345Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
346Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
347Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
348Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
349Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
350Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
351Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
352Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
353Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
354Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
355Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
356Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
357Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
358Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
359Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
360A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
361Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
362Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
363Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
364Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
365Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
366A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
367Plasma-enhanced atomic layer deposition of tungsten nitride
368Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution
369Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
370Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
371Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
372Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
373WS2 transistors on 300 mm wafers with BEOL compatibility
374Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
375Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
376Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
377New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
378P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
379Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
380P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
381Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
382Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
383AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
384Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
385Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
386Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
387Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
388Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
389Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
390ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
391Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition