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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 448 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
3Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
4Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
5Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2
6In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
7Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
8Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
9Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
10Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
11Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
12Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
13Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
14Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
15A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
16Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
17Island Coalescence during Film Growth: An Underestimated Limitation of Cu ALD
18Radical Enhanced Atomic Layer Deposition of Metals and Oxides
19Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
20Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices
21Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
22Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
23Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
24Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
25Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
26Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition
27HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
28Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
29Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
30Atomic layer epitaxy of Si using atomic H
31Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
32ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
33Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
34AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
35In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
36Radical Enhanced Atomic Layer Deposition of Metals and Oxides
37GeSbTe deposition for the PRAM application
38A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
39The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
40Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
41Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
42Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
43Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
44Self-limiting diamond growth from alternating CFx and H fluxes
45Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
46Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
47Radical Enhanced Atomic Layer Deposition of Metals and Oxides
48WS2 transistors on 300 mm wafers with BEOL compatibility
49Radical Enhanced Atomic Layer Deposition of Metals and Oxides
50Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
51New materials for memristive switching
52Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
53Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
54Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
55Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
56Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
57Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
58Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
59Large-Scale Deposition and Growth Mechanism of Silver Nanoparticles by Plasma-Enhanced Atomic Layer Deposition
60Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
61Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
62Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
63Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
64Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
65Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
66Formation of aluminum nitride thin films as gate dielectrics on Si(100)
67Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
68Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
69Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
70Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
71Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
72In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition
73Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
74Atomic layer epitaxy for quantum well nitride-based devices
75GeSbTe deposition for the PRAM application
76Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
77Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
78Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
79Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
80Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
81Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
82Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
83Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
84Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
85Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
86Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
87Fabrication and deformation of three-dimensional hollow ceramic nanostructures
88Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
89Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
90Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
91Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
92In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
93Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
94Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
95Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
96Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
97Atomic Layer Deposition of Niobium Nitride from Different Precursors
98In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
99Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
100In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
101Atomic hydrogen-assisted ALE of germanium
102Gadolinium nitride films deposited using a PEALD based process
103Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
104Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
105Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
106Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
107Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
108Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
109The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
110TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
111Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
112Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
113Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
114Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
115Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
116Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
117Structural and optical characterization of low-temperature ALD crystalline AlN
118Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
119Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
120P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
121Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
122Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
123Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
124Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
125Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
126Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
127Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
128Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
129Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
130Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
131Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
132Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
133Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
134Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
135Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
136Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
137Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
138Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
139Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
140Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
141Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
142Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
143Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
144Copper-ALD Seed Layer as an Enabler for Device Scaling
145Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
146Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
147Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
148Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
149Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
150Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology
151Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
152Nanowire single-photon detectors made of atomic layer-deposited niobium nitride
153Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
154Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
155Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions
156Radical Enhanced Atomic Layer Deposition of Metals and Oxides
157Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
158Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
159Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
160Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
161Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
162Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
163Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
164Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
165Remote Plasma ALD of Platinum and Platinum Oxide Films
166Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
167Atomic layer epitaxy for quantum well nitride-based devices
168Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
169PEALD of Copper using New Precursors for Next Generation of Interconnections
170Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
171Atomic Layer Deposition of Nanolayered Carbon Films
172Study on the characteristics of aluminum thin films prepared by atomic layer deposition
173Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
174Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
175Plasma-enhanced atomic layer deposition of tungsten nitride
176Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
177Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
178A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
179Atomic layer epitaxy for quantum well nitride-based devices
180Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
181Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
182Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
183Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
184Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
185Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
186Atomic layer epitaxy of germanium
187Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
188Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
189Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
190P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
191Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
192Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting
193A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
194In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
195Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
196HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
197Sub-nanometer heating depth of atomic layer annealing
198Room-Temperature Atomic Layer Deposition of Platinum
199The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
200Plasma-enhanced atomic layer deposition of superconducting niobium nitride
201Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
202Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
203Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
204High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
205Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
206Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
207Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
208The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
209Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
210Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
211Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
212Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
213Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
214Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
215Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
216Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
217Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
218AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
219Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
220Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces
221A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
222ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
223Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
224New materials for memristive switching
225Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
226Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
227High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
228Radical Enhanced Atomic Layer Deposition of Metals and Oxides
229Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
230Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
231High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
232Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
233Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
234Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
235Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
236Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
237The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
238Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
239Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
240Hydrogen plasma-enhanced atomic layer deposition of copper thin films
241Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
242Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
243Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
244Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
245Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
246Tuning size and coverage of Pd nanoparticles using atomic layer deposition
247Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
248The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
249Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
250Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
251New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
252Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
253Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
254XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
255High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
256Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
257Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
258Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
259Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
260Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution
261Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
262Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
263Evaluation of plasma parameters on PEALD deposited TaCN
264Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
265Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
266Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
267Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
268Nitride memristors
269Sub-10-nm ferroelectric Gd-doped HfO2 layers
270Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
271GeSbTe deposition for the PRAM application
272Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
273Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
274AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
275Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
276Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
277Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
278Radical Enhanced Atomic Layer Deposition of Metals and Oxides
279Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
280Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
281Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
282Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
283Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
284Plasma-enhanced atomic layer deposition of Co on metal surfaces
285Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
286P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
287Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
288Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
289Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
290Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
291Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
292Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films
293Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
294Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
295Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
296Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
297Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
298Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
299Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
300Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
301A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
302Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
303Plasma-Assisted Atomic Layer Deposition of Palladium
304PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
305The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
306Film Uniformity in Atomic Layer Deposition
307Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
308Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
309Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
310Trilayer Tunnel Selectors for Memristor Memory Cells
311Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
312Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
313Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
314In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications
315Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
316Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
317Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
318Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
319Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
320Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
321Plasma enhanced atomic layer deposition of aluminum sulfide thin films
322A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
323Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition
324Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
325Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
326GeSbTe deposition for the PRAM application
327Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
328Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
329Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
330Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
331Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
332Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
333Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
334GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
335AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
336Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
337Radical Enhanced Atomic Layer Deposition of Metals and Oxides
338High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
339Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
340Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
341Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
342Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
343Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
344Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
345Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
346Microwave properties of superconducting atomic-layer deposited TiN films
347Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
348Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
349Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
350TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
351Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
352Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
353Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
354Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
355A route to low temperature growth of single crystal GaN on sapphire
356Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
357Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
358In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
359Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
360Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
361Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
362Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
363Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
364Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
365Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
366The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
367Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
368The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
369Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
370Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
371Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
372Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
373Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
374Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
375Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
376Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
377Atmospheric pressure plasma enhanced spatial ALD of silver
378Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
379Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition
380Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
381Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
382Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
383Plasma-Enhanced Atomic Layer Deposition of Ni
384Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
385Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition
386Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
387Nitride memristors
388Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
389Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
390Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
391Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
392Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
393A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition
394Radical Enhanced Atomic Layer Deposition of Metals and Oxides
395Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
396Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
397Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
398Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
399Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
400Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
401Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
402Performance of Samples with Novel SRF Materials and Growth Techniques
403Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
404Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
405Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
406Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
407In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
408Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers