H2, Hydrogen, CAS# 1333-74-0

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2Atmospheric pressure plasma enhanced spatial ALD of silver
3Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
7Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
8Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
9Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
10Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
11Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
12Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
13Radical Enhanced Atomic Layer Deposition of Metals and Oxides
14Study on the characteristics of aluminum thin films prepared by atomic layer deposition
15Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
16Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
17Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
18Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
19Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
20Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
21Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
22Atomic layer epitaxy for quantum well nitride-based devices
23ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
24AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
25Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
26Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
27Atomic layer epitaxy for quantum well nitride-based devices
28Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
29Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
30Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
31Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
32Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
33Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
34Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
35Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
36Formation of aluminum nitride thin films as gate dielectrics on Si(100)
37GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
38Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
39Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
40Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
41Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
42Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
43Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
44High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
45High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
46Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
47Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
48Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
49Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
50Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
51Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
52New materials for memristive switching
53Nitride memristors
54Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
55PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
56Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
57Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
58Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
59Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
60Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
61Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow-cathode plasma-assisted atomic layer deposition
62Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
63Structural and optical characterization of low-temperature ALD crystalline AlN
64The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
65XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
66Plasma enhanced atomic layer deposition of aluminum sulfide thin films
67Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
68Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
69Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
70Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
71Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
72Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
73Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
74Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
75Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
76Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
77Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
78Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
79High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
80Radical Enhanced Atomic Layer Deposition of Metals and Oxides
81Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
82Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
83Copper-ALD Seed Layer as an Enabler for Device Scaling
84Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
85Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
86Hydrogen plasma-enhanced atomic layer deposition of copper thin films
87Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
88Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
89Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
90Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
91Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
92Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
93PEALD of Copper using New Precursors for Next Generation of Interconnections
94Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
95Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
96Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
97A route to low temperature growth of single crystal GaN on sapphire
98Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
99Demonstration of flexible thin film transistors with GaN channels
100Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
101Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
102Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
103Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
104Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
105Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
106Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
107Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
108Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
109Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
110Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
111Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
112Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
113Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
114Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
115Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
116Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
117Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
118Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
119Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
120Gadolinium nitride films deposited using a PEALD based process
121GeSbTe deposition for the PRAM application
122Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
123GeSbTe deposition for the PRAM application
124Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
125Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
126Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
127Radical Enhanced Atomic Layer Deposition of Metals and Oxides
128Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
129Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
130HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
131Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
132Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
133Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
134Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
135Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
136High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
137Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
138Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
139The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
140HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
141Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
142Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
143Atomic layer epitaxy for quantum well nitride-based devices
144Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
145Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
146Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
147Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
148Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
149Radical Enhanced Atomic Layer Deposition of Metals and Oxides
150Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
151Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
152Radical Enhanced Atomic Layer Deposition of Metals and Oxides
153Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
154Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
155Atomic Layer Deposition of Niobium Nitride from Different Precursors
156Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
157Plasma-enhanced atomic layer deposition of superconducting niobium nitride
158Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
159Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
160Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
161Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
162Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
163Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
164Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
165Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
166In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
167Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
168Plasma-Enhanced Atomic Layer Deposition of Ni
169Radical Enhanced Atomic Layer Deposition of Metals and Oxides
170Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
171Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
172Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
173In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
174Plasma-Assisted Atomic Layer Deposition of Palladium
175Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
176Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
177Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
178Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
179Remote Plasma ALD of Platinum and Platinum Oxide Films
180Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
181Room-Temperature Atomic Layer Deposition of Platinum
182Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
183In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
184Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
185Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
186Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
187Radical Enhanced Atomic Layer Deposition of Metals and Oxides
188Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
189Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
190In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
191Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
192Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
193Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
194GeSbTe deposition for the PRAM application
195Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
196Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
197Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
198Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
199Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
200Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
201Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
202Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
203Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
204Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
205Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
206Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
207Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
208A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
209Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
210High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
211Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
212Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
213Radical Enhanced Atomic Layer Deposition of Metals and Oxides
214The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
215Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
216In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
217Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
218A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
219Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
220Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
221Evaluation of plasma parameters on PEALD deposited TaCN
222Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
223Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
224Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
225Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
226Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
227The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
228A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
229Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
230Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
231Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
232Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
233Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
234Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
235Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
236Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
237Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
238Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
239Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
240Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
241Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
242Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
243Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
244Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
245Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
246Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
247The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
248The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
249The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
250Trilayer Tunnel Selectors for Memristor Memory Cells
251GeSbTe deposition for the PRAM application
252Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
253Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
254Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
255Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
256Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
257Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
258Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
259Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
260Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
261Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
262Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
263Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
264Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
265Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
266Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
267Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
268Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
269Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
270Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
271Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
272Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
273Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
274Fabrication and deformation of three-dimensional hollow ceramic nanostructures
275Film Uniformity in Atomic Layer Deposition
276Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
277Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
278In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
279Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
280Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
281Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
282Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
283Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
284Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
285Microwave properties of superconducting atomic-layer deposited TiN films
286New materials for memristive switching
287Nitride memristors
288Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
289Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
290Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
291Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
292Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
293Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
294Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
295Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
296Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
297Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
298Radical Enhanced Atomic Layer Deposition of Metals and Oxides
299Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
300Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
301Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
302Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
303Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
304TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
305Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
306Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
307Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
308Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
309Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
310Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
311Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
312Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
313Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
314Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
315Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
316A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
317Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
318Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
319Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
320Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
321Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
322A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
323Plasma-enhanced atomic layer deposition of tungsten nitride
324Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
325Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
326WS2 transistors on 300 mm wafers with BEOL compatibility
327Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
328Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
329New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
330Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
331Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
332Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
333AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
334Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
335Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
336Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
337Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
338Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
339ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
340Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition


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