H2, Hydrogen, CAS# 1333-74-0

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 382 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2Atmospheric pressure plasma enhanced spatial ALD of silver
3Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
7Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
8Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
9Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
10Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
11Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
12Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
13Radical Enhanced Atomic Layer Deposition of Metals and Oxides
14Study on the characteristics of aluminum thin films prepared by atomic layer deposition
15Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
16Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
17Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
18Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
19Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
20Atomic layer epitaxy for quantum well nitride-based devices
21A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
22A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
23ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
24AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
25AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
26Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
27Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
28Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
29Atomic layer epitaxy for quantum well nitride-based devices
30Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
31Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
32Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
33Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
34Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
35Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
36Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
37Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
38Formation of aluminum nitride thin films as gate dielectrics on Si(100)
39GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
40Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
41Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
42Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
43Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
44Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
45High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
46High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
47Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
48Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
49Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
50New materials for memristive switching
51Nitride memristors
52PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
53Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
54Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
55Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
56Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
57Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
58Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
59Structural and optical characterization of low-temperature ALD crystalline AlN
60The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
61XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
62Plasma enhanced atomic layer deposition of aluminum sulfide thin films
63Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
64Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
65Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
66Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
67Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
68Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
69Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
70Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
71Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
72Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
73High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
74Radical Enhanced Atomic Layer Deposition of Metals and Oxides
75Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
76Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
77Copper-ALD Seed Layer as an Enabler for Device Scaling
78Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
79Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
80Hydrogen plasma-enhanced atomic layer deposition of copper thin films
81Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
82Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
83Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
84Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
85Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
86Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
87PEALD of Copper using New Precursors for Next Generation of Interconnections
88Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
89Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
90Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
91Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
92A route to low temperature growth of single crystal GaN on sapphire
93Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
94Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
95Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
96Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
97Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
98Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
99Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
100Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
101Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
102Gadolinium nitride films deposited using a PEALD based process
103GeSbTe deposition for the PRAM application
104Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
105GeSbTe deposition for the PRAM application
106Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
107Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
108Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
109Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
110Radical Enhanced Atomic Layer Deposition of Metals and Oxides
111Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
112Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
113HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
114Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
115Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
116Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
117Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
118Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
119Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
120High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
121Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
122Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
123The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
124HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
125Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
126Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
127Atomic layer epitaxy for quantum well nitride-based devices
128Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
129The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
130P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
131Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
132Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
133Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
134Radical Enhanced Atomic Layer Deposition of Metals and Oxides
135Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
136Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
137Radical Enhanced Atomic Layer Deposition of Metals and Oxides
138Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
139Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
140Atomic Layer Deposition of Niobium Nitride from Different Precursors
141Nanowire single-photon detectors made of atomic layer-deposited niobium nitride
142Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
143Plasma-enhanced atomic layer deposition of superconducting niobium nitride
144Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
145Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
146Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
147Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
148Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
149Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
150Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
151Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
152In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
153Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
154Plasma-Enhanced Atomic Layer Deposition of Ni
155Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
156Radical Enhanced Atomic Layer Deposition of Metals and Oxides
157Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
158Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
159Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
160In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
161Plasma-Assisted Atomic Layer Deposition of Palladium
162Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
163Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
164Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
165Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
166Remote Plasma ALD of Platinum and Platinum Oxide Films
167Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
168Room-Temperature Atomic Layer Deposition of Platinum
169Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
170In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
171Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
172Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
173Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
174Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
175Radical Enhanced Atomic Layer Deposition of Metals and Oxides
176Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
177Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
178Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
179In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
180Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
181Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
182Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
183GeSbTe deposition for the PRAM application
184Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
185Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
186Atomic layer epitaxy of Si using atomic H
187Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
188Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
189Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
190Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
191Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
192Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
193Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
194Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
195Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
196Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
197Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
198Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
199A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
200Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
201High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
202Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
203Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
204Radical Enhanced Atomic Layer Deposition of Metals and Oxides
205The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
206Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
207In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
208Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
209A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
210Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
211Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
212Evaluation of plasma parameters on PEALD deposited TaCN
213Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
214Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
215Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
216Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
217Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
218TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
219The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
220A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
221Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
222Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
223Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
224Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
225High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
226Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
227Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
228Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
229Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
230Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
231Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
232Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
233Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
234Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
235Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
236Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
237Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
238Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
239Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
240The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
241The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
242The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
243Trilayer Tunnel Selectors for Memristor Memory Cells
244GeSbTe deposition for the PRAM application
245Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
246Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
247Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
248Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
249Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
250Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
251Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
252Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
253Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
254Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
255Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
256Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
257Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
258Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
259Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
260Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
261Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
262Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
263Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
264Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
265Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
266Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
267Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
268Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
269Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
270Fabrication and deformation of three-dimensional hollow ceramic nanostructures
271Film Uniformity in Atomic Layer Deposition
272Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
273Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
274In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
275Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
276Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
277Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
278Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
279Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
280Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
281Microwave properties of superconducting atomic-layer deposited TiN films
282New materials for memristive switching
283Nitride memristors
284Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
285Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
286Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
287Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
288Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
289Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
290Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
291Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
292Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
293Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
294Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
295Radical Enhanced Atomic Layer Deposition of Metals and Oxides
296Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
297Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
298Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
299Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
300Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
301TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
302Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
303Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
304Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
305Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
306Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
307Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
308Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
309Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
310Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
311Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
312Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
313Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
314A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
315Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
316Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
317Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
318Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
319Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
320A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
321Plasma-enhanced atomic layer deposition of tungsten nitride
322Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
323Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
324Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
325WS2 transistors on 300 mm wafers with BEOL compatibility
326Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
327Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
328Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
329New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
330P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
331Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
332P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
333Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
334Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
335AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
336Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
337Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
338Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
339Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
340Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
341ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
342Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition