Hydrogen, H2, CAS# 1333-74-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 293 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2Atmospheric pressure plasma enhanced spatial ALD of silver
3Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
7Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
8Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
9Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
10Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
11Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
12Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
13Radical Enhanced Atomic Layer Deposition of Metals and Oxides
14Study on the characteristics of aluminum thin films prepared by atomic layer deposition
15Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
16Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
17Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
18Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
19Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
20Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
21Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
22Atomic layer epitaxy for quantum well nitride-based devices
23ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
24AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
25Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
26Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
27Atomic layer epitaxy for quantum well nitride-based devices
28Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
29Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
30Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
31Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
32Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
33Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
34Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
35GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
36Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
37Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
38Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
39Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
40Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
41High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
42High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
43Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
44Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
45Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
46Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
47Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
48Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
49New materials for memristive switching
50Nitride memristors
51Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
52PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
53Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
54Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
55Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
56Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
57Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
58Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
59Structural and optical characterization of low-temperature ALD crystalline AlN
60The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
61XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
62Plasma enhanced atomic layer deposition of aluminum sulfide thin films
63Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
64Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
65Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
66Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
67Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
68Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
69Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
70Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
71Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
72Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
73Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
74Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
75High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
76Radical Enhanced Atomic Layer Deposition of Metals and Oxides
77Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
78Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
79Copper-ALD Seed Layer as an Enabler for Device Scaling
80Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
81Hydrogen plasma-enhanced atomic layer deposition of copper thin films
82Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
83Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
84Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
85Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
86Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
87Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
88PEALD of Copper using New Precursors for Next Generation of Interconnections
89Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
90Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
91Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
92A route to low temperature growth of single crystal GaN on sapphire
93Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
94Demonstration of flexible thin film transistors with GaN channels
95Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
96Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
97Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
98Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
99Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
100Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
101Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
102Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
103Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
104Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
105Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
106Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
107Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
108Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
109Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
110Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
111Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
112Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
113Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
114Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
115Gadolinium nitride films deposited using a PEALD based process
116Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
117Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
118Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
119Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
120Radical Enhanced Atomic Layer Deposition of Metals and Oxides
121Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
122HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
123Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
124Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
125High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
126Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
127The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
128HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
129Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
130Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
131Atomic layer epitaxy for quantum well nitride-based devices
132Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
133Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
134Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
135Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
136Radical Enhanced Atomic Layer Deposition of Metals and Oxides
137Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
138Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
139Radical Enhanced Atomic Layer Deposition of Metals and Oxides
140Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
141Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
142Atomic Layer Deposition of Niobium Nitride from Different Precursors
143Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
144Plasma-enhanced atomic layer deposition of superconducting niobium nitride
145Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
146Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
147Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
148Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
149Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
150Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
151Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
152Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
153Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
154Plasma-Enhanced Atomic Layer Deposition of Ni
155Radical Enhanced Atomic Layer Deposition of Metals and Oxides
156Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
157Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
158In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
159Plasma-Assisted Atomic Layer Deposition of Palladium
160Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
161Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
162Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
163Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
164Remote Plasma ALD of Platinum and Platinum Oxide Films
165Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
166Room-Temperature Atomic Layer Deposition of Platinum
167Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
168In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
169Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
170Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
171Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
172Radical Enhanced Atomic Layer Deposition of Metals and Oxides
173Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
174Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
175In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
176Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
177Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
178Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
179Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
180Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
181Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
182Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
183Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
184Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
185Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
186Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
187Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
188Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
189Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
190A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
191Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
192Radical Enhanced Atomic Layer Deposition of Metals and Oxides
193In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
194Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
195A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
196Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
197Evaluation of plasma parameters on PEALD deposited TaCN
198Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
199Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
200Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
201Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
202The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
203A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
204Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
205Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
206Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
207Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
208Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
209Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
210Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
211Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
212Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
213Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
214The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
215Trilayer Tunnel Selectors for Memristor Memory Cells
216Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
217Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
218Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
219Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
220Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
221Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
222Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
223Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
224Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
225Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
226Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
227Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
228Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
229Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
230Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
231Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
232Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
233Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
234Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
235Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
236Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
237Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
238Fabrication and deformation of three-dimensional hollow ceramic nanostructures
239Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
240Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
241Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
242Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
243Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
244Microwave properties of superconducting atomic-layer deposited TiN films
245New materials for memristive switching
246Nitride memristors
247Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
248Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
249Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
250Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
251Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
252Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
253Radical Enhanced Atomic Layer Deposition of Metals and Oxides
254Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
255Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
256Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
257Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
258Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
259TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
260Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
261Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
262Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
263Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
264Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
265Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
266Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
267Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
268Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
269Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
270A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
271Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
272Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
273Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
274Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
275Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
276A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
277Plasma-enhanced atomic layer deposition of tungsten nitride
278Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
279Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
280WS2 transistors on 300 mm wafers with BEOL compatibility
281Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
282Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
283New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
284Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
285Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
286Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
287AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
288Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
289Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
290Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
291Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
292Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
293Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition


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