H2, Hydrogen, CAS# 1333-74-0

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2Atmospheric pressure plasma enhanced spatial ALD of silver
3Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
7Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
8Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
9Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
10Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
11Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
12Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
13Radical Enhanced Atomic Layer Deposition of Metals and Oxides
14Study on the characteristics of aluminum thin films prepared by atomic layer deposition
15Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
16Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
17Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
18Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
19Atomic layer epitaxy for quantum well nitride-based devices
20ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
21AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
22Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
23Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
24Atomic layer epitaxy for quantum well nitride-based devices
25Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
26Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
27Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
28Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
29Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
30Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
31Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
32Formation of aluminum nitride thin films as gate dielectrics on Si(100)
33GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
34Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
35Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
36Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
37Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
38Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
39High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
40High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
41Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
42Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
43Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
44New materials for memristive switching
45Nitride memristors
46PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
47Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
48Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
49Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
50Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
51Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
52Structural and optical characterization of low-temperature ALD crystalline AlN
53The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
54XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
55Plasma enhanced atomic layer deposition of aluminum sulfide thin films
56Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
57Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
58Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
59Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
60Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
61Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
62Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
63Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
64Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
65High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
66Radical Enhanced Atomic Layer Deposition of Metals and Oxides
67Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
68Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
69Copper-ALD Seed Layer as an Enabler for Device Scaling
70Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
71Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
72Hydrogen plasma-enhanced atomic layer deposition of copper thin films
73Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
74Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
75Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
76Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
77Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
78Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
79PEALD of Copper using New Precursors for Next Generation of Interconnections
80Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
81Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
82Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
83A route to low temperature growth of single crystal GaN on sapphire
84Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
85Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
86Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
87Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
88Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
89Gadolinium nitride films deposited using a PEALD based process
90GeSbTe deposition for the PRAM application
91Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
92GeSbTe deposition for the PRAM application
93Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
94Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
95Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
96Radical Enhanced Atomic Layer Deposition of Metals and Oxides
97Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
98Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
99HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
100Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
101Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
102Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
103Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
104Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
105High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
106Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
107Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
108The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
109HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
110Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
111Atomic layer epitaxy for quantum well nitride-based devices
112Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
113P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
114Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
115Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
116Radical Enhanced Atomic Layer Deposition of Metals and Oxides
117Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
118Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
119Radical Enhanced Atomic Layer Deposition of Metals and Oxides
120Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
121Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
122Atomic Layer Deposition of Niobium Nitride from Different Precursors
123Nanowire single-photon detectors made of atomic layer-deposited niobium nitride
124Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
125Plasma-enhanced atomic layer deposition of superconducting niobium nitride
126Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
127Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
128Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
129Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
130Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
131Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
132Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
133Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
134In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
135Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
136Plasma-Enhanced Atomic Layer Deposition of Ni
137Radical Enhanced Atomic Layer Deposition of Metals and Oxides
138Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
139Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
140Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
141In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
142Plasma-Assisted Atomic Layer Deposition of Palladium
143Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
144Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
145Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
146Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
147Remote Plasma ALD of Platinum and Platinum Oxide Films
148Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
149Room-Temperature Atomic Layer Deposition of Platinum
150Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
151In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
152Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
153Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
154Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
155Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
156Radical Enhanced Atomic Layer Deposition of Metals and Oxides
157Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
158Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
159In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
160Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
161Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
162Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
163GeSbTe deposition for the PRAM application
164Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
165Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
166Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
167Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
168Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
169Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
170Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
171Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
172Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
173Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
174Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
175Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
176Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
177Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
178A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
179Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
180High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
181Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
182Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
183Radical Enhanced Atomic Layer Deposition of Metals and Oxides
184The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
185Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
186In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
187Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
188A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
189Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
190Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
191Evaluation of plasma parameters on PEALD deposited TaCN
192Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
193Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
194Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
195Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
196Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
197The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
198A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
199Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
200Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
201Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
202Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
203Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
204Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
205Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
206Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
207Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
208Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
209Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
210Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
211Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
212Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
213Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
214Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
215Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
216Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
217The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
218The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
219The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
220Trilayer Tunnel Selectors for Memristor Memory Cells
221GeSbTe deposition for the PRAM application
222Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
223Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
224Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
225Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
226Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
227Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
228Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
229Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
230Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
231Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
232Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
233Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
234Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
235Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
236Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
237Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
238Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
239Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
240Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
241Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
242Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
243Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
244Fabrication and deformation of three-dimensional hollow ceramic nanostructures
245Film Uniformity in Atomic Layer Deposition
246Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
247Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
248In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
249Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
250Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
251Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
252Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
253Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
254Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
255Microwave properties of superconducting atomic-layer deposited TiN films
256New materials for memristive switching
257Nitride memristors
258Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
259Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
260Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
261Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
262Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
263Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
264Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
265Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
266Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
267Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
268Radical Enhanced Atomic Layer Deposition of Metals and Oxides
269Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
270Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
271Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
272Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
273Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
274TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
275Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
276Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
277Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
278Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
279Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
280Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
281Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
282Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
283Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
284Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
285Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
286A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
287Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
288Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
289Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
290Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
291Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
292A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
293Plasma-enhanced atomic layer deposition of tungsten nitride
294Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
295Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
296Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
297WS2 transistors on 300 mm wafers with BEOL compatibility
298Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
299Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
300New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
301P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
302Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
303P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
304Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
305Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
306AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
307Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
308Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
309Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
310Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
311Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
312ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
313Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition


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