H2, Hydrogen, CAS# 1333-74-0

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 378 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2Atmospheric pressure plasma enhanced spatial ALD of silver
3Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
7Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
8Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
9Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
10Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
11Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
12Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
13Radical Enhanced Atomic Layer Deposition of Metals and Oxides
14Study on the characteristics of aluminum thin films prepared by atomic layer deposition
15Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
16Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
17Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
18Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
19Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
20Atomic layer epitaxy for quantum well nitride-based devices
21A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
22ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
23AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
24AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
25Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
26Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
27Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
28Atomic layer epitaxy for quantum well nitride-based devices
29Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
30Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
31Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
32Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
33Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
34Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
35Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
36Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
37Formation of aluminum nitride thin films as gate dielectrics on Si(100)
38GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
39Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
40Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
41Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
42Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
43Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
44High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
45High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
46Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
47Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
48Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
49New materials for memristive switching
50Nitride memristors
51PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
52Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
53Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
54Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
55Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
56Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
57Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
58Structural and optical characterization of low-temperature ALD crystalline AlN
59The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
60XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
61Plasma enhanced atomic layer deposition of aluminum sulfide thin films
62Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
63Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
64Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
65Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
66Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
67Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
68Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
69Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
70Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
71Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
72High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
73Radical Enhanced Atomic Layer Deposition of Metals and Oxides
74Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
75Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
76Copper-ALD Seed Layer as an Enabler for Device Scaling
77Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
78Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
79Hydrogen plasma-enhanced atomic layer deposition of copper thin films
80Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
81Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
82Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
83Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
84Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
85Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
86PEALD of Copper using New Precursors for Next Generation of Interconnections
87Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
88Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
89Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
90Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
91A route to low temperature growth of single crystal GaN on sapphire
92Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
93Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
94Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
95Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
96Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
97Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
98Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
99Gadolinium nitride films deposited using a PEALD based process
100GeSbTe deposition for the PRAM application
101Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
102GeSbTe deposition for the PRAM application
103Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
104Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
105Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
106Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
107Radical Enhanced Atomic Layer Deposition of Metals and Oxides
108Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
109Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
110HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
111Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
112Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
113Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
114Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
115Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
116Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
117High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
118Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
119Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
120The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
121HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
122Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
123Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
124Atomic layer epitaxy for quantum well nitride-based devices
125Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
126The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
127P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
128Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
129Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
130Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
131Radical Enhanced Atomic Layer Deposition of Metals and Oxides
132Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
133Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
134Radical Enhanced Atomic Layer Deposition of Metals and Oxides
135Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
136Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
137Atomic Layer Deposition of Niobium Nitride from Different Precursors
138Nanowire single-photon detectors made of atomic layer-deposited niobium nitride
139Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
140Plasma-enhanced atomic layer deposition of superconducting niobium nitride
141Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
142Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
143Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
144Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
145Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
146Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
147Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
148Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
149In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
150Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
151Plasma-Enhanced Atomic Layer Deposition of Ni
152Radical Enhanced Atomic Layer Deposition of Metals and Oxides
153Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
154Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
155Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
156In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
157Plasma-Assisted Atomic Layer Deposition of Palladium
158Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
159Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
160Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
161Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
162Remote Plasma ALD of Platinum and Platinum Oxide Films
163Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
164Room-Temperature Atomic Layer Deposition of Platinum
165Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
166In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
167Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
168Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
169Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
170Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
171Radical Enhanced Atomic Layer Deposition of Metals and Oxides
172Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
173Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
174Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
175In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
176Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
177Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
178Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
179GeSbTe deposition for the PRAM application
180Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
181Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
182Atomic layer epitaxy of Si using atomic H
183Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
184Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
185Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
186Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
187Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
188Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
189Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
190Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
191Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
192Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
193Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
194Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
195A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
196Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
197High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
198Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
199Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
200Radical Enhanced Atomic Layer Deposition of Metals and Oxides
201The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
202Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
203In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
204Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
205A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
206Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
207Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
208Evaluation of plasma parameters on PEALD deposited TaCN
209Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
210Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
211Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
212Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
213Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
214TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
215The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
216A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
217Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
218Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
219Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
220Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
221High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
222Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
223Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
224Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
225Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
226Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
227Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
228Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
229Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
230Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
231Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
232Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
233Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
234Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
235Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
236The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
237The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
238The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
239Trilayer Tunnel Selectors for Memristor Memory Cells
240GeSbTe deposition for the PRAM application
241Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
242Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
243Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
244Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
245Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
246Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
247Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
248Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
249Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
250Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
251Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
252Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
253Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
254Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
255Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
256Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
257Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
258Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
259Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
260Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
261Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
262Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
263Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
264Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
265Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
266Fabrication and deformation of three-dimensional hollow ceramic nanostructures
267Film Uniformity in Atomic Layer Deposition
268Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
269Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
270In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
271Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
272Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
273Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
274Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
275Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
276Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
277Microwave properties of superconducting atomic-layer deposited TiN films
278New materials for memristive switching
279Nitride memristors
280Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
281Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
282Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
283Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
284Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
285Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
286Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
287Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
288Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
289Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
290Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
291Radical Enhanced Atomic Layer Deposition of Metals and Oxides
292Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
293Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
294Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
295Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
296Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
297TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
298Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
299Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
300Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
301Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
302Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
303Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
304Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
305Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
306Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
307Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
308Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
309Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
310A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
311Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
312Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
313Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
314Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
315Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
316A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
317Plasma-enhanced atomic layer deposition of tungsten nitride
318Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
319Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
320Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
321WS2 transistors on 300 mm wafers with BEOL compatibility
322Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
323Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
324Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
325New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
326P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
327Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
328P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
329Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
330Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
331AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
332Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
333Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
334Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
335Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
336Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
337ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
338Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition