| 1 | Ag films grown by remote plasma enhanced atomic layer deposition on different substrates |
| 2 | Atmospheric pressure plasma enhanced spatial ALD of silver |
| 3 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
| 4 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 5 | Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars |
| 6 | Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings |
| 7 | Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films |
| 8 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates |
| 9 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage |
| 10 | Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films |
| 11 | Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films |
| 12 | Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma |
| 13 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 14 | Study on the characteristics of aluminum thin films prepared by atomic layer deposition |
| 15 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 16 | Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures |
| 17 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
| 18 | Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing |
| 19 | Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization |
| 20 | Atomic layer epitaxy for quantum well nitride-based devices |
| 21 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |
| 22 | ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs |
| 23 | AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing |
| 24 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
| 25 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 26 | Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma |
| 27 | Atomic layer epitaxy for quantum well nitride-based devices |
| 28 | Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition |
| 29 | Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films |
| 30 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 31 | Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition |
| 32 | Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy |
| 33 | Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 |
| 34 | Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method |
| 35 | Formation of aluminum nitride thin films as gate dielectrics on Si(100) |
| 36 | GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation |
| 37 | Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
| 38 | Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
| 39 | Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition |
| 40 | Growth of aluminum nitride films by plasma-enhanced atomic layer deposition |
| 41 | Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition |
| 42 | High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
| 43 | High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy |
| 44 | Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition |
| 45 | Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films |
| 46 | Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing |
| 47 | New materials for memristive switching |
| 48 | Nitride memristors |
| 49 | PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity |
| 50 | Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering |
| 51 | Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs |
| 52 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 53 | Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN |
| 54 | Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films |
| 55 | Structural and optical characterization of low-temperature ALD crystalline AlN |
| 56 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
| 57 | XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition |
| 58 | Plasma enhanced atomic layer deposition of aluminum sulfide thin films |
| 59 | Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant |
| 60 | Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor |
| 61 | Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl |
| 62 | Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl |
| 63 | Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications |
| 64 | Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8] |
| 65 | Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation |
| 66 | Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co |
| 67 | Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating |
| 68 | Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition |
| 69 | High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 70 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 71 | Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor |
| 72 | Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides |
| 73 | Copper-ALD Seed Layer as an Enabler for Device Scaling |
| 74 | Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor |
| 75 | Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper |
| 76 | Hydrogen plasma-enhanced atomic layer deposition of copper thin films |
| 77 | Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces |
| 78 | Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications |
| 79 | Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers |
| 80 | Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy |
| 81 | Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma |
| 82 | Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors |
| 83 | PEALD of Copper using New Precursors for Next Generation of Interconnections |
| 84 | Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage |
| 85 | Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD |
| 86 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
| 87 | A route to low temperature growth of single crystal GaN on sapphire |
| 88 | Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions |
| 89 | Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition |
| 90 | Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition |
| 91 | Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs |
| 92 | Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition |
| 93 | Gadolinium nitride films deposited using a PEALD based process |
| 94 | GeSbTe deposition for the PRAM application |
| 95 | Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition |
| 96 | GeSbTe deposition for the PRAM application |
| 97 | Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon |
| 98 | Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure |
| 99 | Atomic layer deposition of high-mobility hydrogen-doped zinc oxide |
| 100 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 101 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 102 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
| 103 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
| 104 | Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition |
| 105 | Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing |
| 106 | Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications |
| 107 | Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition |
| 108 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 109 | High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness |
| 110 | Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique |
| 111 | Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation |
| 112 | The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces |
| 113 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
| 114 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 115 | Atomic layer epitaxy for quantum well nitride-based devices |
| 116 | Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition |
| 117 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 118 | Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects |
| 119 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
| 120 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
| 121 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 122 | Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum |
| 123 | Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu |
| 124 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 125 | Alloyed 2D Metal-Semiconductor Atomic Layer Junctions |
| 126 | Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application |
| 127 | Atomic Layer Deposition of Niobium Nitride from Different Precursors |
| 128 | Nanowire single-photon detectors made of atomic layer-deposited niobium nitride |
| 129 | Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor |
| 130 | Plasma-enhanced atomic layer deposition of superconducting niobium nitride |
| 131 | Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition |
| 132 | Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition |
| 133 | Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition |
| 134 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 135 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 136 | Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide |
| 137 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
| 138 | Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition |
| 139 | In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition |
| 140 | Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition |
| 141 | Plasma-Enhanced Atomic Layer Deposition of Ni |
| 142 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 143 | Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition |
| 144 | Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas |
| 145 | Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier |
| 146 | In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd |
| 147 | Plasma-Assisted Atomic Layer Deposition of Palladium |
| 148 | Plasma-enhanced atomic layer deposition of palladium on a polymer substrate |
| 149 | Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition |
| 150 | Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates |
| 151 | Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes |
| 152 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
| 153 | Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films |
| 154 | Room-Temperature Atomic Layer Deposition of Platinum |
| 155 | Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition |
| 156 | In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating |
| 157 | Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition |
| 158 | Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma |
| 159 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma |
| 160 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 161 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 162 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
| 163 | Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics |
| 164 | In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating |
| 165 | Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD |
| 166 | Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 167 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
| 168 | GeSbTe deposition for the PRAM application |
| 169 | Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon |
| 170 | Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen |
| 171 | Atomic layer epitaxy of Si using atomic H |
| 172 | Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon |
| 173 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 174 | Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization |
| 175 | Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma |
| 176 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
| 177 | Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration |
| 178 | Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition |
| 179 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 180 | Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride |
| 181 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
| 182 | Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition |
| 183 | Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition |
| 184 | A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films |
| 185 | Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition |
| 186 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
| 187 | Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers |
| 188 | Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties |
| 189 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 190 | The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties |
| 191 | Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control |
| 192 | In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications |
| 193 | Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum |
| 194 | A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu |
| 195 | Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum |
| 196 | Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films |
| 197 | Evaluation of plasma parameters on PEALD deposited TaCN |
| 198 | Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties |
| 199 | Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma |
| 200 | Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V |
| 201 | Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas |
| 202 | Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films |
| 203 | The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications |
| 204 | A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films |
| 205 | Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants |
| 206 | Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum |
| 207 | Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper |
| 208 | Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition |
| 209 | Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD |
| 210 | Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals |
| 211 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
| 212 | Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects |
| 213 | Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films |
| 214 | Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma |
| 215 | Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma |
| 216 | Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent |
| 217 | Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition |
| 218 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 219 | Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas |
| 220 | Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition |
| 221 | Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition |
| 222 | Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition |
| 223 | The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties |
| 224 | The physical properties of cubic plasma-enhanced atomic layer deposition TaN films |
| 225 | The Properties of Cu Thin Films on Ru Depending on the ALD Temperature |
| 226 | Trilayer Tunnel Selectors for Memristor Memory Cells |
| 227 | GeSbTe deposition for the PRAM application |
| 228 | Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition |
| 229 | Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers |
| 230 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 231 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 232 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 233 | Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material |
| 234 | Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization |
| 235 | Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition |
| 236 | Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases |
| 237 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 238 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 239 | Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition |
| 240 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
| 241 | Atomic layer deposition of TiN for the fabrication of nanomechanical resonators |
| 242 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
| 243 | Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method |
| 244 | Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates |
| 245 | Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories |
| 246 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 247 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
| 248 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
| 249 | Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films |
| 250 | Fabrication and deformation of three-dimensional hollow ceramic nanostructures |
| 251 | Film Uniformity in Atomic Layer Deposition |
| 252 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
| 253 | Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System |
| 254 | In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition |
| 255 | Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals |
| 256 | Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology |
| 257 | Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes |
| 258 | Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films |
| 259 | Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition |
| 260 | Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient |
| 261 | Microwave properties of superconducting atomic-layer deposited TiN films |
| 262 | New materials for memristive switching |
| 263 | Nitride memristors |
| 264 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
| 265 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
| 266 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
| 267 | Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications |
| 268 | Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry |
| 269 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
| 270 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
| 271 | Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material |
| 272 | Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization |
| 273 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 274 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 275 | Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor |
| 276 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 277 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 278 | Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics |
| 279 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
| 280 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
| 281 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
| 282 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
| 283 | Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment |
| 284 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 285 | Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy |
| 286 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
| 287 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
| 288 | Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition |
| 289 | Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM |
| 290 | Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor |
| 291 | Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes |
| 292 | A controlled growth of WNx and WCx thin films prepared by atomic layer deposition |
| 293 | Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization |
| 294 | Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten |
| 295 | Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices |
| 296 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
| 297 | Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices |
| 298 | A controlled growth of WNx and WCx thin films prepared by atomic layer deposition |
| 299 | Plasma-enhanced atomic layer deposition of tungsten nitride |
| 300 | Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents |
| 301 | Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates |
| 302 | Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S |
| 303 | WS2 transistors on 300 mm wafers with BEOL compatibility |
| 304 | Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization |
| 305 | Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition |
| 306 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
| 307 | New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping |
| 308 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 309 | Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping |
| 310 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 311 | Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique |
| 312 | Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition |
| 313 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
| 314 | Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth |
| 315 | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma |
| 316 | Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry |
| 317 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 318 | Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications |
| 319 | ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition |
| 320 | Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition |