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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 399 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2Atmospheric pressure plasma enhanced spatial ALD of silver
3Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
7Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
8Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
9Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
10Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
11Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
12Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
13Radical Enhanced Atomic Layer Deposition of Metals and Oxides
14Study on the characteristics of aluminum thin films prepared by atomic layer deposition
15Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
16Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
17Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
18Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
19Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
20Atomic layer epitaxy for quantum well nitride-based devices
21A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
22A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
23ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
24AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
25AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
26AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
27Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
28Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
29Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
30Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
31Atomic layer epitaxy for quantum well nitride-based devices
32Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
33Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
34Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
35Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
36Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
37Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
38Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
39Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
40Formation of aluminum nitride thin films as gate dielectrics on Si(100)
41GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
42Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
43Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
44Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
45Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
46Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
47High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
48High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
49Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
50Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
51Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
52New materials for memristive switching
53Nitride memristors
54PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
55Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
56Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
57Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
58Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
59Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
60Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
61Structural and optical characterization of low-temperature ALD crystalline AlN
62Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
63The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
64XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
65Plasma enhanced atomic layer deposition of aluminum sulfide thin films
66Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
67Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
68Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
69Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
70Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
71Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
72Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
73In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
74Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
75Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
76Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
77High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
78In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
79Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting
80Radical Enhanced Atomic Layer Deposition of Metals and Oxides
81Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
82Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
83Copper-ALD Seed Layer as an Enabler for Device Scaling
84Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
85Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
86Hydrogen plasma-enhanced atomic layer deposition of copper thin films
87Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
88Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
89Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
90Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
91Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
92Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
93PEALD of Copper using New Precursors for Next Generation of Interconnections
94Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
95Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
96Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
97Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
98A route to low temperature growth of single crystal GaN on sapphire
99Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
100Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
101Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
102Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
103Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
104Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
105Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
106Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
107Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
108Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
109Gadolinium nitride films deposited using a PEALD based process
110GeSbTe deposition for the PRAM application
111Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
112GeSbTe deposition for the PRAM application
113Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
114Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
115Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
116Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
117Radical Enhanced Atomic Layer Deposition of Metals and Oxides
118Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
119Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
120HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
121Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
122Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
123Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
124Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
125Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
126Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
127High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
128Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
129Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
130The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
131HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
132Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
133Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
134Atomic layer epitaxy for quantum well nitride-based devices
135Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
136The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
137P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
138Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
139Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
140Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
141Radical Enhanced Atomic Layer Deposition of Metals and Oxides
142Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
143Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
144Radical Enhanced Atomic Layer Deposition of Metals and Oxides
145Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
146Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
147Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
148Atomic Layer Deposition of Niobium Nitride from Different Precursors
149Nanowire single-photon detectors made of atomic layer-deposited niobium nitride
150Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
151Plasma-enhanced atomic layer deposition of superconducting niobium nitride
152Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
153Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
154Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
155Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
156Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
157Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
158Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
159Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
160Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
161In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
162Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
163Plasma-Enhanced Atomic Layer Deposition of Ni
164Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
165Radical Enhanced Atomic Layer Deposition of Metals and Oxides
166Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
167Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
168Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
169In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
170Plasma-Assisted Atomic Layer Deposition of Palladium
171Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
172Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
173Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
174Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
175Remote Plasma ALD of Platinum and Platinum Oxide Films
176Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
177Room-Temperature Atomic Layer Deposition of Platinum
178Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
179In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
180Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
181Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
182Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
183Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
184Radical Enhanced Atomic Layer Deposition of Metals and Oxides
185Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
186Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
187Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
188In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
189Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
190Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
191Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
192GeSbTe deposition for the PRAM application
193Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
194Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
195Atomic layer epitaxy of Si using atomic H
196Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
197Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
198Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
199Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
200Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
201Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
202Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
203Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
204Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
205Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
206Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
207Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
208Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
209A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
210Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
211High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
212Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
213Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
214Radical Enhanced Atomic Layer Deposition of Metals and Oxides
215The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
216Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
217In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
218Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
219A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
220Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
221Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
222Evaluation of plasma parameters on PEALD deposited TaCN
223Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
224Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
225In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition
226Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
227Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
228Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
229TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
230The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
231A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
232Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
233Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
234Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
235Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
236High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
237Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
238Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
239Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
240Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
241Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
242Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
243Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
244Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
245Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
246Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
247Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
248Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
249Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
250Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
251The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
252The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
253The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
254Trilayer Tunnel Selectors for Memristor Memory Cells
255GeSbTe deposition for the PRAM application
256Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
257Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
258Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
259Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
260Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
261Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
262Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
263Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
264Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
265Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
266Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
267Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
268Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
269Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
270Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
271Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
272Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
273Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
274Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
275Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
276Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
277Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
278Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
279Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
280Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
281Fabrication and deformation of three-dimensional hollow ceramic nanostructures
282Film Uniformity in Atomic Layer Deposition
283Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
284Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
285In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
286Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
287Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
288Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
289Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
290Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
291Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
292Microwave properties of superconducting atomic-layer deposited TiN films
293New materials for memristive switching
294Nitride memristors
295Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
296Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
297Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
298Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
299Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
300Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
301Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
302Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
303Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
304Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
305Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
306Radical Enhanced Atomic Layer Deposition of Metals and Oxides
307Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
308Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
309Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
310Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
311Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
312TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
313Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
314Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
315Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
316Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
317Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
318Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
319Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
320Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
321Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
322Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
323Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
324Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
325Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
326Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
327Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
328Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
329A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
330Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
331Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
332Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
333Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
334Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
335A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
336Plasma-enhanced atomic layer deposition of tungsten nitride
337Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution
338Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
339Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
340Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
341Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
342WS2 transistors on 300 mm wafers with BEOL compatibility
343Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
344Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
345Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
346New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
347P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
348Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
349P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
350Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
351Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
352AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
353Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
354Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
355Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
356Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
357Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
358ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
359Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition