H2, Hydrogen, CAS# 1333-74-0

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2Atmospheric pressure plasma enhanced spatial ALD of silver
3Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
7Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
8Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
9Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
10Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
11Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
12Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
13Radical Enhanced Atomic Layer Deposition of Metals and Oxides
14Study on the characteristics of aluminum thin films prepared by atomic layer deposition
15Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
16Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
17Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
18Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
19Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
20Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
21Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
22Atomic layer epitaxy for quantum well nitride-based devices
23ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
24AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
25Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
26Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
27Atomic layer epitaxy for quantum well nitride-based devices
28Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
29Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
30Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
31Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
32Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
33Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
34Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
35Formation of aluminum nitride thin films as gate dielectrics on Si(100)
36GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
37Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
38Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
39Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
40Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
41Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
42Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
43High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
44High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
45Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
46Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
47Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
48Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
49Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
50Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
51New materials for memristive switching
52Nitride memristors
53Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
54PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
55Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
56Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
57Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
58Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
59Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
60Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
61Structural and optical characterization of low-temperature ALD crystalline AlN
62The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
63XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
64Plasma enhanced atomic layer deposition of aluminum sulfide thin films
65Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
66Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
67Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
68Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
69Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
70Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
71Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
72Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
73Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
74Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
75Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
76Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
77High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
78Radical Enhanced Atomic Layer Deposition of Metals and Oxides
79Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
80Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
81Copper-ALD Seed Layer as an Enabler for Device Scaling
82Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
83Hydrogen plasma-enhanced atomic layer deposition of copper thin films
84Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
85Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
86Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
87Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
88Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
89Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
90PEALD of Copper using New Precursors for Next Generation of Interconnections
91Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
92Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
93Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
94A route to low temperature growth of single crystal GaN on sapphire
95Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
96Demonstration of flexible thin film transistors with GaN channels
97Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
98Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
99Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
100Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
101Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
102Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
103Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
104Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
105Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
106Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
107Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
108Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
109Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
110Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
111Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
112Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
113Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
114Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
115Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
116Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
117Gadolinium nitride films deposited using a PEALD based process
118Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
119Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
120Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
121Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
122Radical Enhanced Atomic Layer Deposition of Metals and Oxides
123Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
124HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
125Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
126Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
127High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
128Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
129The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
130HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
131Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
132Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
133Atomic layer epitaxy for quantum well nitride-based devices
134Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
135Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
136Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
137Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
138Radical Enhanced Atomic Layer Deposition of Metals and Oxides
139Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
140Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
141Radical Enhanced Atomic Layer Deposition of Metals and Oxides
142Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
143Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
144Atomic Layer Deposition of Niobium Nitride from Different Precursors
145Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
146Plasma-enhanced atomic layer deposition of superconducting niobium nitride
147Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
148Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
149Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
150Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
151Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
152Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
153Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
154Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
155Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
156Plasma-Enhanced Atomic Layer Deposition of Ni
157Radical Enhanced Atomic Layer Deposition of Metals and Oxides
158Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
159Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
160In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
161Plasma-Assisted Atomic Layer Deposition of Palladium
162Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
163Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
164Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
165Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
166Remote Plasma ALD of Platinum and Platinum Oxide Films
167Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
168Room-Temperature Atomic Layer Deposition of Platinum
169Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
170In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
171Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
172Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
173Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
174Radical Enhanced Atomic Layer Deposition of Metals and Oxides
175Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
176Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
177In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
178Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
179Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
180Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
181Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
182Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
183Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
184Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
185Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
186Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
187Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
188Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
189Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
190Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
191Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
192Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
193A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
194Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
195Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
196Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
197Radical Enhanced Atomic Layer Deposition of Metals and Oxides
198The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
199In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
200Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
201A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
202Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
203Evaluation of plasma parameters on PEALD deposited TaCN
204Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
205Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
206Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
207Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
208The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
209A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
210Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
211Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
212Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
213Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
214Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
215Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
216Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
217Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
218Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
219Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
220Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
221Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
222Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
223The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
224The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
225The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
226Trilayer Tunnel Selectors for Memristor Memory Cells
227Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
228Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
229Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
230Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
231Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
232Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
233Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
234Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
235Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
236Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
237Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
238Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
239Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
240Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
241Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
242Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
243Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
244Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
245Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
246Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
247Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
248Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
249Fabrication and deformation of three-dimensional hollow ceramic nanostructures
250Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
251Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
252Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
253Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
254Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
255Microwave properties of superconducting atomic-layer deposited TiN films
256New materials for memristive switching
257Nitride memristors
258Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
259Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
260Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
261Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
262Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
263Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
264Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
265Radical Enhanced Atomic Layer Deposition of Metals and Oxides
266Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
267Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
268Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
269Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
270Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
271TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
272Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
273Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
274Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
275Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
276Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
277Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
278Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
279Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
280Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
281Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
282A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
283Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
284Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
285Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
286Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
287Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
288A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
289Plasma-enhanced atomic layer deposition of tungsten nitride
290Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
291Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
292WS2 transistors on 300 mm wafers with BEOL compatibility
293Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
294Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
295New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
296Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
297Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
298Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
299AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
300Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
301Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
302Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
303Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
304Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
305Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition


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