1 | Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures |
2 | Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy |
3 | Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor |
4 | Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology |
5 | Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition |
6 | Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma |
7 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
8 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
9 | The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties |
10 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
11 | Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM |
12 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
13 | Sub-nanometer heating depth of atomic layer annealing |
14 | Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen |
15 | Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions |
16 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
17 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
18 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
19 | The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications |
20 | Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces |
21 | ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition |
22 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
23 | Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer |
24 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
25 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
26 | Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy |
27 | Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co |
28 | GeSbTe deposition for the PRAM application |
29 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
30 | Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique |
31 | In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films |
32 | Comparison of AlF3 thin films grown by thermal and plasma enhanced atomic layer deposition |
33 | A controlled growth of WNx and WCx thin films prepared by atomic layer deposition |
34 | Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten |
35 | Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition |
36 | Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates |
37 | Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN |
38 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
39 | Evaluation of plasma parameters on PEALD deposited TaCN |
40 | Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum |
41 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
42 | RF Characterization of Novel Superconducting Materials and Multilayers |
43 | Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
44 | ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs |
45 | Nitride memristors |
46 | Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma |
47 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
48 | The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces |
49 | Ag films grown by remote plasma enhanced atomic layer deposition on different substrates |
50 | Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition |
51 | Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers |
52 | Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect |
53 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
54 | Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect |
55 | Film Uniformity in Atomic Layer Deposition |
56 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
57 | Control of ion energy during plasma enhanced atomic layer deposition: A new strategy for the modulation of TiN growth delay on SiO2 |
58 | Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization |
59 | Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100°C through Control of Plasma Chemistry |
60 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
61 | Tuning size and coverage of Pd nanoparticles using atomic layer deposition |
62 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
63 | Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers |
64 | Alloyed 2D Metal-Semiconductor Atomic Layer Junctions |
65 | Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers |
66 | Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films |
67 | Copper-ALD Seed Layer as an Enabler for Device Scaling |
68 | Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum |
69 | Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing |
70 | Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films |
71 | Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars |
72 | Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V |
73 | Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires |
74 | A route to low temperature growth of single crystal GaN on sapphire |
75 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
76 | Room-Temperature Atomic Layer Deposition of Platinum |
77 | Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon |
78 | Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl |
79 | A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films |
80 | Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds |
81 | Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate |
82 | In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating |
83 | Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films |
84 | Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma |
85 | Atomic layer epitaxy of germanium |
86 | Atomic layer epitaxy for quantum well nitride-based devices |
87 | Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition |
88 | Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide |
89 | Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control |
90 | TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition |
91 | Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition |
92 | Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN |
93 | Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition |
94 | Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films |
95 | Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient |
96 | Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition |
97 | XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition |
98 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
99 | Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu |
100 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
101 | Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices |
102 | Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD |
103 | Hydrogen plasma-enhanced atomic layer deposition of copper thin films |
104 | Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition |
105 | Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier |
106 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
107 | Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics |
108 | Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition |
109 | Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer |
110 | Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon |
111 | Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics |
112 | Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition |
113 | In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications |
114 | Atomic hydrogen-assisted ALE of germanium |
115 | High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
116 | Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions |
117 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
118 | Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition |
119 | Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions |
120 | Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films |
121 | Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect |
122 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
123 | Trilayer Tunnel Selectors for Memristor Memory Cells |
124 | Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology |
125 | Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides |
126 | Gadolinium nitride films deposited using a PEALD based process |
127 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
128 | Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements |
129 | AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments |
130 | Plasma-enhanced atomic layer deposition of tungsten nitride |
131 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
132 | Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties |
133 | Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material |
134 | Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition |
135 | Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs |
136 | Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition |
137 | Study on the characteristics of aluminum thin films prepared by atomic layer deposition |
138 | In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films |
139 | Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma |
140 | Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases |
141 | Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor |
142 | Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum |
143 | A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition |
144 | Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors |
145 | High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition |
146 | Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition |
147 | Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes |
148 | PEALD of Copper using New Precursors for Next Generation of Interconnections |
149 | Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications |
150 | Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3 |
151 | Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method |
152 | Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices |
153 | Atomic layer deposition of TiN for the fabrication of nanomechanical resonators |
154 | Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition |
155 | The role of plasma in plasma-enhanced atomic layer deposition of crystalline films |
156 | Formation of aluminum nitride thin films as gate dielectrics on Si(100) |
157 | Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting |
158 | Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization |
159 | Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition |
160 | Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films |
161 | Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition |
162 | Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma |
163 | Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties |
164 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
165 | Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition |
166 | The physical properties of cubic plasma-enhanced atomic layer deposition TaN films |
167 | New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping |
168 | Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum |
169 | Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure |
170 | Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications |
171 | A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films |
172 | Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications |
173 | Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas |
174 | Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition |
175 | The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films |
176 | Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure |
177 | Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium |
178 | High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating |
179 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
180 | Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films |
181 | Growth of aluminum nitride films by plasma-enhanced atomic layer deposition |
182 | Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers |
183 | Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper |
184 | Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods |
185 | Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
186 | Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition |
187 | Atomic layer epitaxy for quantum well nitride-based devices |
188 | Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates |
189 | Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation |
190 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
191 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
192 | Atomic layer epitaxy of Si using atomic H |
193 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
194 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
195 | High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness |
196 | Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN |
197 | Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition |
198 | Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition |
199 | Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth |
200 | Sub-10-nm ferroelectric Gd-doped HfO2 layers |
201 | Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application |
202 | Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes |
203 | Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition |
204 | Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation |
205 | Self-limiting diamond growth from alternating CFx and H fluxes |
206 | Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals |
207 | The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties |
208 | Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents |
209 | Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect |
210 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
211 | Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition |
212 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
213 | Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition |
214 | Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization |
215 | New materials for memristive switching |
216 | Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films |
217 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
218 | Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications |
219 | Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition |
220 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
221 | Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition |
222 | GeSbTe deposition for the PRAM application |
223 | Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD |
224 | Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition |
225 | Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen |
226 | Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma |
227 | In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating |
228 | Plasma enhanced atomic layer deposition of aluminum sulfide thin films |
229 | Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3 |
230 | Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry |
231 | Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon |
232 | Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8] |
233 | Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films |
234 | Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators |
235 | Plasma-enhanced atomic layer deposition of Co on metal surfaces |
236 | Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics |
237 | Microwave properties of superconducting atomic-layer deposited TiN films |
238 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
239 | Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition |
240 | Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment |
241 | Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films |
242 | Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor |
243 | Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration |
244 | Nitride memristors |
245 | Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories |
246 | Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy |
247 | In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition |
248 | Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer |
249 | Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent |
250 | Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage |
251 | WS2 transistors on 300 mm wafers with BEOL compatibility |
252 | Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization |
253 | RF Characterization of Novel Superconducting Materials and Multilayers |
254 | Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films |
255 | AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms |
256 | Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes |
257 | Atomic Layer Deposition of Niobium Nitride from Different Precursors |
258 | Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals |
259 | A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu |
260 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
261 | Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition |
262 | In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications |
263 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
264 | Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization |
265 | Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100°C through Control of Plasma Chemistry |
266 | Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers |
267 | Island Coalescence during Film Growth: An Underestimated Limitation of Cu ALD |
268 | Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films |
269 | High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy |
270 | Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition |
271 | Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method |
272 | Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System |
273 | In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition |
274 | Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition |
275 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals |
276 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
277 | Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films |
278 | Structural and optical characterization of low-temperature ALD crystalline AlN |
279 | Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper |
280 | Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants |
281 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
282 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
283 | Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor |
284 | Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition |
285 | Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition |
286 | Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition |
287 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
288 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
289 | Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100°C through Control of Plasma Chemistry |
290 | Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor |
291 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
292 | Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition |
293 | Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique |
294 | A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition |
295 | Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition |
296 | Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications |
297 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
298 | Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition |
299 | Shuffling Atomic Layer Deposition Gas Sequences to Modulate Bimetallic Thin Films and Nanoparticle Properties |
300 | Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure |
301 | A controlled growth of WNx and WCx thin films prepared by atomic layer deposition |
302 | Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique |
303 | Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy |
304 | Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures |
305 | Nanowire single-photon detectors made of atomic layer-deposited niobium nitride |
306 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
307 | Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces |
308 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
309 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
310 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
311 | Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material |
312 | Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl |
313 | Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates |
314 | Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects |
315 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
316 | Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing |
317 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
318 | Plasma-Enhanced Atomic Layer Deposition of Ni |
319 | Atomic Layer Deposition of Nanolayered Carbon Films |
320 | Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition |
321 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
322 | In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition |
323 | Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating |
324 | Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation |
325 | Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor |
326 | HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer |
327 | Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
328 | AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers |
329 | Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers |
330 | High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications |
331 | Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride |
332 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
333 | Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas |
334 | Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors |
335 | Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films |
336 | Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications |
337 | Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition |
338 | AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing |
339 | Plasma-enhanced atomic layer deposition of palladium on a polymer substrate |
340 | Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S |
341 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor |
342 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
343 | GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation |
344 | Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization |
345 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
346 | Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating |
347 | Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology |
348 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
349 | Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs |
350 | Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma |
351 | Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution |
352 | The Properties of Cu Thin Films on Ru Depending on the ALD Temperature |
353 | Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects |
354 | Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures |
355 | In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd |
356 | Atomic layer epitaxy for quantum well nitride-based devices |
357 | Plasma-enhanced atomic layer deposition of superconducting niobium nitride |
358 | Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films |
359 | Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma |
360 | Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN |
361 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |
362 | Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD |
363 | Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells |
364 | Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition |
365 | Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition |
366 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
367 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
368 | Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes |
369 | Atmospheric pressure plasma enhanced spatial ALD of silver |
370 | Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications |
371 | Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma |
372 | Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition |
373 | GeSbTe deposition for the PRAM application |
374 | Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor |
375 | Fabrication and deformation of three-dimensional hollow ceramic nanostructures |
376 | Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings |
377 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
378 | Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant |
379 | Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights |
380 | Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering |
381 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
382 | Atomic layer deposition of high-mobility hydrogen-doped zinc oxide |
383 | Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping |
384 | New materials for memristive switching |
385 | Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma |
386 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
387 | Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions |
388 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage |
389 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
390 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
391 | Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas |
392 | Plasma-Assisted Atomic Layer Deposition of Palladium |
393 | Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma |
394 | Plasma enhanced atomic layer deposition of Co thin film on Ï„-MnAl for effective magnetic exchange coupling and enhanced energy products |
395 | Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties |
396 | Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes |
397 | Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition |
398 | Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition |
399 | Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition |
400 | Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition |
401 | Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature |
402 | Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD |
403 | Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride |
404 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
405 | Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition |
406 | Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films |
407 | Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing |
408 | Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry |
409 | Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier |
410 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
411 | Performance of Samples with Novel SRF Materials and Growth Techniques |
412 | Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition |
413 | Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces |
414 | GeSbTe deposition for the PRAM application |
415 | Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application |
416 | Large-Scale Deposition and Growth Mechanism of Silver Nanoparticles by Plasma-Enhanced Atomic Layer Deposition |
417 | Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices |
418 | Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates |
419 | PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity |
420 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
421 | Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films |