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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 392 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2Atmospheric pressure plasma enhanced spatial ALD of silver
3Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
7Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
8Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
9Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
10Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
11Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
12Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
13Radical Enhanced Atomic Layer Deposition of Metals and Oxides
14Study on the characteristics of aluminum thin films prepared by atomic layer deposition
15Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
16Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
17Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
18Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
19Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
20Atomic layer epitaxy for quantum well nitride-based devices
21A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
22A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
23ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
24AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
25AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
26Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
27Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
28Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
29Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
30Atomic layer epitaxy for quantum well nitride-based devices
31Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
32Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
33Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
34Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
35Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
36Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
37Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
38Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
39Formation of aluminum nitride thin films as gate dielectrics on Si(100)
40GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
41Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
42Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
43Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
44Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
45Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
46High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
47High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
48Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
49Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
50Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
51New materials for memristive switching
52Nitride memristors
53PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
54Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
55Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
56Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
57Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
58Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
59Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
60Structural and optical characterization of low-temperature ALD crystalline AlN
61Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
62The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
63XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
64Plasma enhanced atomic layer deposition of aluminum sulfide thin films
65Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
66Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
67Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
68Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
69Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
70Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
71Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
72Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
73Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
74Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
75High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
76Radical Enhanced Atomic Layer Deposition of Metals and Oxides
77Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
78Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
79Copper-ALD Seed Layer as an Enabler for Device Scaling
80Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
81Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
82Hydrogen plasma-enhanced atomic layer deposition of copper thin films
83Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
84Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
85Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
86Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
87Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
88Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
89PEALD of Copper using New Precursors for Next Generation of Interconnections
90Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
91Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
92Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
93Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
94A route to low temperature growth of single crystal GaN on sapphire
95Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
96Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
97Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
98Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
99Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
100Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
101Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
102Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
103Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
104Gadolinium nitride films deposited using a PEALD based process
105GeSbTe deposition for the PRAM application
106Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
107GeSbTe deposition for the PRAM application
108Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
109Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
110Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
111Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
112Radical Enhanced Atomic Layer Deposition of Metals and Oxides
113Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
114Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
115HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
116Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
117Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
118Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
119Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
120Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
121Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
122High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
123Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
124Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
125The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
126HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
127Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
128Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
129Atomic layer epitaxy for quantum well nitride-based devices
130Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
131The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
132P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
133Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
134Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
135Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
136Radical Enhanced Atomic Layer Deposition of Metals and Oxides
137Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
138Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
139Radical Enhanced Atomic Layer Deposition of Metals and Oxides
140Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
141Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
142Atomic Layer Deposition of Niobium Nitride from Different Precursors
143Nanowire single-photon detectors made of atomic layer-deposited niobium nitride
144Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
145Plasma-enhanced atomic layer deposition of superconducting niobium nitride
146Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
147Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
148Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
149Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
150Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
151Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
152Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
153Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
154Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
155In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
156Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
157Plasma-Enhanced Atomic Layer Deposition of Ni
158Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
159Radical Enhanced Atomic Layer Deposition of Metals and Oxides
160Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
161Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
162Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
163In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
164Plasma-Assisted Atomic Layer Deposition of Palladium
165Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
166Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
167Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
168Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
169Remote Plasma ALD of Platinum and Platinum Oxide Films
170Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
171Room-Temperature Atomic Layer Deposition of Platinum
172Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
173In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
174Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
175Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
176Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
177Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
178Radical Enhanced Atomic Layer Deposition of Metals and Oxides
179Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
180Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
181Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
182In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
183Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
184Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
185Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
186GeSbTe deposition for the PRAM application
187Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
188Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
189Atomic layer epitaxy of Si using atomic H
190Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
191Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
192Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
193Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
194Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
195Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
196Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
197Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
198Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
199Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
200Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
201Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
202Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
203A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
204Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
205High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
206Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
207Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
208Radical Enhanced Atomic Layer Deposition of Metals and Oxides
209The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
210Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
211In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
212Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
213A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
214Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
215Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
216Evaluation of plasma parameters on PEALD deposited TaCN
217Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
218Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
219Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
220Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
221Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
222TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
223The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
224A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
225Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
226Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
227Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
228Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
229High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
230Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
231Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
232Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
233Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
234Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
235Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
236Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
237Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
238Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
239Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
240Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
241Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
242Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
243Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
244The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
245The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
246The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
247Trilayer Tunnel Selectors for Memristor Memory Cells
248GeSbTe deposition for the PRAM application
249Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
250Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
251Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
252Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
253Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
254Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
255Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
256Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
257Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
258Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
259Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
260Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
261Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
262Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
263Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
264Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
265Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
266Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
267Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
268Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
269Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
270Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
271Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
272Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
273Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
274Fabrication and deformation of three-dimensional hollow ceramic nanostructures
275Film Uniformity in Atomic Layer Deposition
276Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
277Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
278In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
279Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
280Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
281Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
282Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
283Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
284Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
285Microwave properties of superconducting atomic-layer deposited TiN films
286New materials for memristive switching
287Nitride memristors
288Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
289Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
290Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
291Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
292Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
293Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
294Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
295Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
296Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
297Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
298Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
299Radical Enhanced Atomic Layer Deposition of Metals and Oxides
300Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
301Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
302Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
303Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
304Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
305TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
306Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
307Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
308Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
309Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
310Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
311Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
312Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
313Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
314Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
315Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
316Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
317Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
318Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
319Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
320Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
321Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
322A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
323Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
324Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
325Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
326Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
327Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
328A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
329Plasma-enhanced atomic layer deposition of tungsten nitride
330Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution
331Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
332Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
333Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
334Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
335WS2 transistors on 300 mm wafers with BEOL compatibility
336Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
337Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
338Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
339New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
340P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
341Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
342P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
343Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
344Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
345AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
346Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
347Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
348Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
349Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
350Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
351ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
352Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition