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Hydrogen, H2, CAS# 1333-74-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 273 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2Atmospheric pressure plasma enhanced spatial ALD of silver
3Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
7Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
8Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
9Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
10Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
11Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
12Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
13Radical Enhanced Atomic Layer Deposition of Metals and Oxides
14Study on the characteristics of aluminum thin films prepared by atomic layer deposition
15Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
16Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
17Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
18Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
19Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
20Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
21Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
22Atomic layer epitaxy for quantum well nitride-based devices
23ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
24AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
25Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
26Atomic layer epitaxy for quantum well nitride-based devices
27Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
28Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
29Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
30Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
31Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
32Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
33GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
34Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
35Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
36Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
37Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
38High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
39High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
40Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
41Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
42Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
43Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
44Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
45Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
46New materials for memristive switching
47Nitride memristors
48Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
49PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
50Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
51Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
52Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
53Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
54Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
55Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
56Structural and optical characterization of low-temperature ALD crystalline AlN
57The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
58XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
59Plasma enhanced atomic layer deposition of aluminum sulfide thin films
60Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
61Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
62Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
63Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
64Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
65Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
66Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
67Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
68Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
69Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
70Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
71Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
72High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
73Radical Enhanced Atomic Layer Deposition of Metals and Oxides
74Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
75Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
76Copper-ALD Seed Layer as an Enabler for Device Scaling
77Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
78Hydrogen plasma-enhanced atomic layer deposition of copper thin films
79Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
80Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
81Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
82Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
83PEALD of Copper using New Precursors for Next Generation of Interconnections
84Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
85Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
86Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
87A route to low temperature growth of single crystal GaN on sapphire
88Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
89Demonstration of flexible thin film transistors with GaN channels
90Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
91Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
92Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
93Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
94Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
95Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
96Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
97Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
98Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
99Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
100Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
101Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
102Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
103Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
104Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
105Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
106Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
107Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
108Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
109Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
110Gadolinium nitride films deposited using a PEALD based process
111Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
112Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
113Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
114Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
115Radical Enhanced Atomic Layer Deposition of Metals and Oxides
116Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
117HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
118Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
119Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
120High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
121Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
122The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
123HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
124Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
125Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
126Atomic layer epitaxy for quantum well nitride-based devices
127Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
128Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
129Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
130Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
131Radical Enhanced Atomic Layer Deposition of Metals and Oxides
132Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
133Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
134Radical Enhanced Atomic Layer Deposition of Metals and Oxides
135Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
136Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
137Atomic Layer Deposition of Niobium Nitride from Different Precursors
138Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
139Plasma-enhanced atomic layer deposition of superconducting niobium nitride
140Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
141Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
142Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
143Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
144Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
145Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
146Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
147Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
148Plasma-Enhanced Atomic Layer Deposition of Ni
149Radical Enhanced Atomic Layer Deposition of Metals and Oxides
150Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
151Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
152In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
153Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
154Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
155Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
156Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
157Remote Plasma ALD of Platinum and Platinum Oxide Films
158Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
159Room-Temperature Atomic Layer Deposition of Platinum
160Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
161In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
162Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
163Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
164Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
165Radical Enhanced Atomic Layer Deposition of Metals and Oxides
166Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
167Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
168In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
169Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
170Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
171Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
172Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
173Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
174Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
175Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
176Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
177Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
178Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
179Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
180Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
181Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
182Radical Enhanced Atomic Layer Deposition of Metals and Oxides
183In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
184Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
185A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
186Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
187Evaluation of plasma parameters on PEALD deposited TaCN
188Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
189Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
190Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
191Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
192The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
193Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
194Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
195Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
196Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
197Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
198Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
199Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
200Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
201The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
202Trilayer Tunnel Selectors for Memristor Memory Cells
203Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
204Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
205Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
206Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
207Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
208Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
209Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
210Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
211Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
212Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
213Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
214Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
215Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
216Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
217Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
218Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
219Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
220Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
221Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
222Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
223Fabrication and deformation of three-dimensional hollow ceramic nanostructures
224Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
225Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
226Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
227Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
228Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
229Microwave properties of superconducting atomic-layer deposited TiN films
230New materials for memristive switching
231Nitride memristors
232Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
233Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
234Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
235Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
236Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
237Radical Enhanced Atomic Layer Deposition of Metals and Oxides
238Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
239Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
240Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
241Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
242TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
243Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
244Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
245Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
246Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
247Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
248Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
249Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
250Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
251Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
252Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
253A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
254Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
255Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
256Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
257Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
258Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
259A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
260Plasma-enhanced atomic layer deposition of tungsten nitride
261Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
262Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
263WS2 transistors on 300 mm wafers with BEOL compatibility
264Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
265Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
266New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
267Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
268Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
269AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
270Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
271Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
272Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
273Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications


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