H2, Hydrogen, CAS# 1333-74-0

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2Atmospheric pressure plasma enhanced spatial ALD of silver
3Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
7Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
8Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
9Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
10Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
11Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
12Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
13Radical Enhanced Atomic Layer Deposition of Metals and Oxides
14Study on the characteristics of aluminum thin films prepared by atomic layer deposition
15Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
16Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
17Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
18Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
19Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
20Atomic layer epitaxy for quantum well nitride-based devices
21A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
22ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
23AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
24AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
25Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
26Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
27Atomic layer epitaxy for quantum well nitride-based devices
28Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
29Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
30Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
31Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
32Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
33Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
34Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
35Formation of aluminum nitride thin films as gate dielectrics on Si(100)
36GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
37Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
38Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
39Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
40Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
41Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
42High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
43High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
44Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
45Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
46Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
47New materials for memristive switching
48Nitride memristors
49PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
50Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
51Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
52Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
53Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
54Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
55Structural and optical characterization of low-temperature ALD crystalline AlN
56The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
57XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
58Plasma enhanced atomic layer deposition of aluminum sulfide thin films
59Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
60Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
61Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
62Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
63Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
64Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
65Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
66Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
67Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
68Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
69High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
70Radical Enhanced Atomic Layer Deposition of Metals and Oxides
71Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
72Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
73Copper-ALD Seed Layer as an Enabler for Device Scaling
74Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
75Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
76Hydrogen plasma-enhanced atomic layer deposition of copper thin films
77Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
78Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
79Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
80Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
81Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
82Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
83PEALD of Copper using New Precursors for Next Generation of Interconnections
84Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
85Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
86Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
87A route to low temperature growth of single crystal GaN on sapphire
88Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
89Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
90Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
91Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
92Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
93Gadolinium nitride films deposited using a PEALD based process
94GeSbTe deposition for the PRAM application
95Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
96GeSbTe deposition for the PRAM application
97Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
98Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
99Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
100Radical Enhanced Atomic Layer Deposition of Metals and Oxides
101Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
102Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
103HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
104Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
105Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
106Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
107Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
108Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
109High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
110Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
111Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
112The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
113HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
114Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
115Atomic layer epitaxy for quantum well nitride-based devices
116Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
117P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
118Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
119Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
120Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
121Radical Enhanced Atomic Layer Deposition of Metals and Oxides
122Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
123Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
124Radical Enhanced Atomic Layer Deposition of Metals and Oxides
125Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
126Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
127Atomic Layer Deposition of Niobium Nitride from Different Precursors
128Nanowire single-photon detectors made of atomic layer-deposited niobium nitride
129Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
130Plasma-enhanced atomic layer deposition of superconducting niobium nitride
131Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
132Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
133Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
134Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
135Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
136Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
137Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
138Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
139In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
140Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
141Plasma-Enhanced Atomic Layer Deposition of Ni
142Radical Enhanced Atomic Layer Deposition of Metals and Oxides
143Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
144Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
145Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
146In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
147Plasma-Assisted Atomic Layer Deposition of Palladium
148Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
149Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
150Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
151Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
152Remote Plasma ALD of Platinum and Platinum Oxide Films
153Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
154Room-Temperature Atomic Layer Deposition of Platinum
155Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
156In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
157Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
158Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
159Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
160Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
161Radical Enhanced Atomic Layer Deposition of Metals and Oxides
162Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
163Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
164In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
165Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
166Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
167Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
168GeSbTe deposition for the PRAM application
169Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
170Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
171Atomic layer epitaxy of Si using atomic H
172Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
173Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
174Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
175Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
176Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
177Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
178Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
179Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
180Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
181Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
182Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
183Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
184A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
185Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
186High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
187Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
188Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
189Radical Enhanced Atomic Layer Deposition of Metals and Oxides
190The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
191Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
192In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
193Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
194A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
195Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
196Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
197Evaluation of plasma parameters on PEALD deposited TaCN
198Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
199Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
200Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
201Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
202Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
203The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
204A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
205Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
206Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
207Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
208Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
209Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
210Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
211Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
212Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
213Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
214Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
215Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
216Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
217Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
218Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
219Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
220Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
221Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
222Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
223The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
224The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
225The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
226Trilayer Tunnel Selectors for Memristor Memory Cells
227GeSbTe deposition for the PRAM application
228Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
229Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
230Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
231Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
232Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
233Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
234Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
235Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
236Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
237Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
238Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
239Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
240Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
241Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
242Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
243Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
244Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
245Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
246Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
247Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
248Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
249Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
250Fabrication and deformation of three-dimensional hollow ceramic nanostructures
251Film Uniformity in Atomic Layer Deposition
252Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
253Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
254In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
255Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
256Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
257Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
258Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
259Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
260Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
261Microwave properties of superconducting atomic-layer deposited TiN films
262New materials for memristive switching
263Nitride memristors
264Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
265Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
266Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
267Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
268Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
269Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
270Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
271Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
272Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
273Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
274Radical Enhanced Atomic Layer Deposition of Metals and Oxides
275Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
276Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
277Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
278Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
279Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
280TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
281Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
282Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
283Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
284Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
285Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
286Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
287Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
288Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
289Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
290Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
291Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
292A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
293Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
294Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
295Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
296Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
297Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
298A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
299Plasma-enhanced atomic layer deposition of tungsten nitride
300Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
301Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
302Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
303WS2 transistors on 300 mm wafers with BEOL compatibility
304Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
305Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
306Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
307New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
308P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
309Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
310P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
311Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
312Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
313AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
314Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
315Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
316Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
317Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
318Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
319ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
320Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition


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