H2, Hydrogen, CAS# 1333-74-0

Where to buy

NumberVendorLink
1Proton OnSiteBenchtop Hydrogen Generators - 200 to 600cc/min

www.plasma-ald.com does not endorse any chemical suppliers. These links are provided for the benefit of our users. If a link goes bad, let us know.

If you would like your company's precursor products listed, or your existing listing changed or removed, send me an email.


Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 425 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
2Atmospheric pressure plasma enhanced spatial ALD of silver
3Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
4Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
5Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
6Optimization of the Silver Nanoparticles PEALD Process on the Surface of 1-D Titania Coatings
7Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
8Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
9Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
10Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
11Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
12Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
13Radical Enhanced Atomic Layer Deposition of Metals and Oxides
14Study on the characteristics of aluminum thin films prepared by atomic layer deposition
15Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
16Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
17Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
18Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
19Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
20Uniform Atomic Layer Deposition of Al2O3 on Graphene by Reversible Hydrogen Plasma Functionalization
21Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
22Atomic layer epitaxy for quantum well nitride-based devices
23A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
24A film-texture driven piezoelectricity of AlN thin films grown at low temperatures by plasma-enhanced atomic layer deposition
25ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
26AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
27AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
28AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
29Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
30Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
31Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
32Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
33Atomic layer epitaxy for quantum well nitride-based devices
34Bipolar resistive switching properties of AlN films deposited by plasma-enhanced atomic layer deposition
35Comparison of mechanical properties and composition of magnetron sputter and plasma enhanced atomic layer deposition aluminum nitride films
36Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
37Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
38Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers
39Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
40Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
41Fabrication and properties of AlN film on GaN substrate by using remote plasma atomic layer deposition method
42Formation of aluminum nitride thin films as gate dielectrics on Si(100)
43GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
44Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
45Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
46Growing oriented AlN films on sapphire substrates by plasma-enhanced atomic layer deposition
47Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
48Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
49High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
50High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy
51Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
52Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
53Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
54Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
55New materials for memristive switching
56Nitride memristors
57PEALD-Grown Crystalline AlN Films on Si(100) with Sharp Interface and Good Uniformity
58Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
59Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
60Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
61Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
62Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
63Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
64Structural and optical characterization of low-temperature ALD crystalline AlN
65Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
66The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
67XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition
68Plasma enhanced atomic layer deposition of aluminum sulfide thin films
69Atomic Layer Deposition of Cobalt Using H2-, N2-, and NH3-Based Plasmas: On the Role of the Co-reactant
70Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
71Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
72Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
73Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
74Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
75Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
76In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
77Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
78Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
79Plasma-enhanced atomic layer deposition of Co on metal surfaces
80Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
81High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
82In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
83Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting
84Radical Enhanced Atomic Layer Deposition of Metals and Oxides
85Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
86Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
87Copper-ALD Seed Layer as an Enabler for Device Scaling
88Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
89Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper
90Hydrogen plasma-enhanced atomic layer deposition of copper thin films
91Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces
92Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
93Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers
94Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy
95Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
96Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
97PEALD of Copper using New Precursors for Next Generation of Interconnections
98Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
99Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
100Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
101Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
102Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
103Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
104A route to low temperature growth of single crystal GaN on sapphire
105Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
106Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
107Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
108Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
109Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
110Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
111Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
112Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
113Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
114Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
115Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
116Gadolinium nitride films deposited using a PEALD based process
117Atomic hydrogen-assisted ALE of germanium
118Atomic layer epitaxy of germanium
119GeSbTe deposition for the PRAM application
120Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
121GeSbTe deposition for the PRAM application
122Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
123Plasma-assisted atomic layer deposition of germanium antimony tellurium compounds
124Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
125Atomic layer deposition of high-mobility hydrogen-doped zinc oxide
126Radical Enhanced Atomic Layer Deposition of Metals and Oxides
127Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ions
128Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
129Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
130Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties
131HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
132Highly Conductive HfNx Films Prepared by Plasma-Assisted Atomic Layer Deposition
133Low resistivity HfNx grown by plasma-assisted ALD with external rf substrate biasing
134Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
135Plasma-Assisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis(ethylmethylamino)hafnium for CMOS Gate Electrode Applications
136Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
137Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
138High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
139Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique
140Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
141The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
142HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
143Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
144Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
145Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
146Atomic layer epitaxy for quantum well nitride-based devices
147Metallic indium segregation control of InN thin films grown on Si(100) by plasma-enhanced atomic layer deposition
148The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
149P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
150Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
151Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
152Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
153Radical Enhanced Atomic Layer Deposition of Metals and Oxides
154Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
155Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
156Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
157Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
158Radical Enhanced Atomic Layer Deposition of Metals and Oxides
159Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
160Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
161Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
162Atomic Layer Deposition of Niobium Nitride from Different Precursors
163Multistep atomic layer deposition process for ultrathin superconducting NbN films with high critical current density on amorphous substrate
164Nanowire single-photon detectors made of atomic layer-deposited niobium nitride
165Performance of Samples with Novel SRF Materials and Growth Techniques
166Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
167Plasma-enhanced atomic layer deposition of superconducting niobium nitride
168Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition
169Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
170Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
171Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
172Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
173Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices
174Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
175Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide
176Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
177Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
178In Situ Synchrotron X-Ray Diffraction Analysis of Phase Transformation in Epitaxial Metastable hcp Nickel Thin Films, Prepared via Plasma-Enhanced Atomic Layer Deposition
179Interface Properties of Nickel-silicide Films Deposited by Using Plasma-assisted Atomic Layer Deposition
180Plasma-Enhanced Atomic Layer Deposition of Ni
181Plasma-Enhanced Atomic Layer Deposition of Nickel Nanotubes with Low Resistivity and Coherent Magnetization Dynamics for 3D Spintronics
182Radical Enhanced Atomic Layer Deposition of Metals and Oxides
183Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
184Ni80Fe20 nanotubes with optimized spintronic functionalities prepared by atomic layer deposition
185Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
186Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier
187In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
188Plasma-Assisted Atomic Layer Deposition of Palladium
189Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
190Sub-nanometer dimensions control of core/shell nanoparticles prepared by atomic layer deposition
191Tuning size and coverage of Pd nanoparticles using atomic layer deposition
192Atomic layer deposition of ultrathin platinum films on tungsten atomic layer deposition adhesion layers: Application to high surface area substrates
193Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
194Remote Plasma ALD of Platinum and Platinum Oxide Films
195Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
196Room-Temperature Atomic Layer Deposition of Platinum
197Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
198In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
199Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
200Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
201Plasma Enhanced Atomic Layer Deposition of Ruthenium Thin Films Using Isopropylmethylbenzene-Cyclohexadiene-Ruthenium and NH3 Plasma
202Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
203Radical Enhanced Atomic Layer Deposition of Metals and Oxides
204Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
205Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
206Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
207In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
208Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
209Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
210Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
211GeSbTe deposition for the PRAM application
212Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
213Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogen
214Atomic layer epitaxy of Si using atomic H
215Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
216Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
217Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
218Atomic layer controlled deposition of silicon nitride and in situ growth observation by infrared reflection absorption spectroscopy
219Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
220Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
221Evaluation of Low Temperature Silicon Nitride Spacer for High-k Metal Gate Integration
222Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
223Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
224Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma
225Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
226Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
227Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
228Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition
229A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
230Diffusion barrier properties of transition metal thin films grown by plasma-enhanced atomic-layer deposition
231High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
232Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
233Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
234Radical Enhanced Atomic Layer Deposition of Metals and Oxides
235The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
236Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
237In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
238Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
239A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
240Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
241Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
242Evaluation of plasma parameters on PEALD deposited TaCN
243Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
244Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
245In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition
246Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
247Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
248Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
249TaCN growth with PDMAT and H2/Ar plasma by plasma enhanced atomic layer deposition
250The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
251A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
252Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants
253Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
254Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
255Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
256Growth of cubic-TaN thin films by plasma-enhanced atomic layer deposition
257High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications
258Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
259Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
260Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
261Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
262Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
263Plasma-Enhanced Atomic Layer Deposition of TaN Thin Films Using Tantalum-Pentafluoride and N2/H2/Ar Plasma
264Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
265Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
266Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
267Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
268Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
269Robust TaNx diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition
270Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition
271Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
272The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties
273The physical properties of cubic plasma-enhanced atomic layer deposition TaN films
274The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
275Trilayer Tunnel Selectors for Memristor Memory Cells
276GeSbTe deposition for the PRAM application
277Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
278Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
279Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
280Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
281Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
282Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
283Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
284Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
285Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
286Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
287Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
288Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
289Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition
290Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
291Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
292Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
293Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
294Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights
295Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
296Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
297Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
298Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
299Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
300Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
301Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
302Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
303Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
304Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films
305Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
306Fabrication and deformation of three-dimensional hollow ceramic nanostructures
307Film Uniformity in Atomic Layer Deposition
308Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
309Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
310In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition
311Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
312Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
313Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
314Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
315Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition
316Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
317Microwave properties of superconducting atomic-layer deposited TiN films
318New materials for memristive switching
319Nitride memristors
320Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes
321Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor
322Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
323Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3
324Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications
325Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry
326Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
327Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
328Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
329Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization
330Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
331Radical Enhanced Atomic Layer Deposition of Metals and Oxides
332Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
333Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
334Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
335Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
336Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
337TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
338Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
339Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
340Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition
341Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells
342Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
343Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
344Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
345Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
346Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
347Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy
348Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
349Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
350Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
351Advanced characterizations of fluorine-free tungsten film and its application as low resistance liner for PCRAM
352Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
353Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
354A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
355Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
356Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
357Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
358Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
359Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
360A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
361Plasma-enhanced atomic layer deposition of tungsten nitride
362Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution
363Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents
364Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
365Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S
366Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
367WS2 transistors on 300 mm wafers with BEOL compatibility
368Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization
369Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
370Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
371New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
372P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
373Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
374P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
375Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
376Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition
377AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
378Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
379Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
380Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
381Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
382Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
383Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
384ZrO2-coated SiC nanowires prepared by plasma-enhanced atomic layer chemical vapor deposition
385Achieving ultrahigh corrosion resistance and conductive zirconium oxynitride coating on metal bipolar plates by plasma enhanced atomic layer deposition