Publication Information

Title:
Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
Type:
Journal
Info:
ACS Appl. Mater. Interfaces 7, 35, 19857-19862
Date:
2015-08-25

Author Information

Name Institution
Harm C. M. KnoopsEindhoven University of Technology
Eline M. J. BraekenEindhoven University of Technology
Stephen E. PottsQueen Mary University of London
Suvi HaukkaASM Microchemistry Oy
Viljami PoreASM Microchemistry Oy
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma SiNx


Plasma SiNx


Plasma SiNx


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Wet Etch Resistance
Analysis: Wet Etch

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

Silicon

Keywords

Notes

Hydrogen containing plasmas had very slow growth rates and were not fully investigated.
FlexAL PEALD SiNx study with BTBAS and N2, N2/H2, and NH3 plasmas.
338