Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
Type:
Journal
Info:
ACS Appl. Mater. Interfaces 7, 35, 19857-19862
Date:
2015-08-25
Author Information
| Name | Institution |
|---|---|
| Harm C. M. Knoops | Eindhoven University of Technology |
| Eline M. J. Braeken | Eindhoven University of Technology |
| Stephen E. Potts | Queen Mary University of London |
| Suvi Haukka | ASM Microchemistry Oy |
| Viljami Pore | ASM Microchemistry Oy |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma SiNx
Plasma SiNx
Plasma SiNx
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Wet Etch Resistance
Analysis: Wet Etch
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
| Silicon |
Notes
| Hydrogen containing plasmas had very slow growth rates and were not fully investigated. |
| FlexAL PEALD SiNx study with BTBAS and N2, N2/H2, and NH3 plasmas. |
| 338 |