Publication Information

Title: Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma

Type: Journal

Info: ACS Appl. Mater. Interfaces 7, 35, 19857-19862

Date: 2015-08-25

DOI: http://dx.doi.org/10.1021/acsami.5b06833

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Queen Mary University of London

ASM Microchemistry Oy

ASM Microchemistry Oy

Eindhoven University of Technology

Films

Deposition Temperature Range = 25-500C

186598-40-3

7727-37-9

Deposition Temperature Range = 25-500C

186598-40-3

7727-37-9

1333-74-0

Deposition Temperature Range = 25-500C

186598-40-3

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000F

Refractive Index

Ellipsometry

J.A. Woollam M-2000F

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Density

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

-

Wet Etch Resistance

Wet Etch

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Substrates

Silicon

Keywords

Notes

Hydrogen containing plasmas had very slow growth rates and were not fully investigated.

FlexAL PEALD SiNx study with BTBAS and N2, N2/H2, and NH3 plasmas.

338



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