BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2, CAS# 186598-40-3

Where to buy

NumberVendorRegionLink
1DOCK/CHEMICALS🇩🇪Bis(tertiarybutylamino)silane
2Pegasus Chemicals🇬🇧Bis(tertbutylamino)silane
3Ereztech🇺🇸Bis(t-butylamino)silane
4Strem Chemicals, Inc.🇺🇸Bis(t-butylamino)silane, BTBAS (99.999%-Si) PURATREM
5Gelest🇺🇸Di(t-Butylamino)Silane
6Strem Chemicals, Inc.🇺🇸Bis(t-butylamino)silane, 97+% BTBAS

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 17 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
2Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
3Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
4Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
5Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
6Residual stress study of thin films deposited by atomic layer deposition
7Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
8Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
9Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
10Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
11Designing high performance precursors for atomic layer deposition of silicon oxide
12Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
13Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
14Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
15Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
16Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
17Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers