Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2, CAS# 186598-40-3

Where to buy

NumberVendorRegionLink
1Pegasus Chemicals🇬🇧Bis(tertbutylamino)silane
2Gelest🇺🇸Di(t-Butylamino)Silane
3DOCK/CHEMICALS🇩🇪Bis(tertiarybutylamino)silane
4Strem Chemicals, Inc.🇺🇸Bis(t-butylamino)silane, BTBAS (99.999%-Si) PURATREM
5Strem Chemicals, Inc.🇺🇸Bis(t-butylamino)silane, 97+% BTBAS
6Ereztech🇺🇸Bis(t-butylamino)silane

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 17 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
2Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
3Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
4Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
5Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators
6Designing high performance precursors for atomic layer deposition of silicon oxide
7Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide
8Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
9Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
10Residual stress study of thin films deposited by atomic layer deposition
11Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
12Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
13Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
14Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
15Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
16Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
17Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator