|1||Strem Chemicals, Inc.||Bis(t-butylamino)silane, 97+% BTBAS|
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Your search for publications using this chemistry returned 12 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.
|1||Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma|
|2||Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy|
|3||Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies|
|4||Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers|
|5||Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time|
|6||Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride|
|7||Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition|
|8||Designing high performance precursors for atomic layer deposition of silicon oxide|
|9||Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator|
|10||Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma|
|11||Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD|
|12||Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator|
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