Bis(Tert-ButylAmido)Silane, BTBAS, CAS# 186598-40-3

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Bis(t-butylamino)silane, 97+% BTBAS

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 12 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
2Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
3Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
4Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
5Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
6Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
7Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
8Designing high performance precursors for atomic layer deposition of silicon oxide
9Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator
10Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
11Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
12Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator


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