Publication Information

Title:
Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
Type:
Journal
Info:
Chem. Mater. 2016, 28, 5864-5871
Date:
2016-07-20

Author Information

Name Institution
Roger H.E.C. BoschEindhoven University of Technology
Lidewij E. CornelissenEindhoven University of Technology
Harm C. M. KnoopsEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma SiNx


Film/Plasma Properties

Characteristic: Gas Phase Species
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer

Substrates

Si(100)

Keywords

Notes

836