
Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
Type:
Journal
Info:
Chem. Mater. 2016, 28, 5864-5871
Date:
2016-07-20
Author Information
Name | Institution |
---|---|
Roger H.E.C. Bosch | Eindhoven University of Technology |
Lidewij E. Cornelissen | Eindhoven University of Technology |
Harm C. M. Knoops | Eindhoven University of Technology |
Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma SiNx
Film/Plasma Properties
Characteristic: Gas Phase Species
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Substrates
Si(100) |
Notes
836 |