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Residual stress study of thin films deposited by atomic layer deposition

Type:
Journal
Info:
2017 IEEE 12th International Conference on ASIC (ASICON)
Date:
2017-10-25
DOI:
http://dx.doi.org/10.1109/ASICON.2017.8252455

Author Information

Name Institution
Zhen ZhuAalto University
Emma SalmiBeneq Oy
Sauli VirtanenBeneq Oy

Films

Plasma SiO2

Hardware used: Beneq TFS-200
BTBAS, bis(tert-butylamido) silane, (t-BuCNH)2SiH2
CAS#: 186598-40-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 90C

Plasma Al2O3

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 90C

Film/Plasma Properties

Characteristic: Film Stress
Analysis: Wafer Curvature
Diagnostic: KLA-Tencor FLX 2320

Substrates

Silicon

Notes

Information based on thesis coverage, not the acutal publication
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