1 | Theoretical Understanding of the Reaction Mechanism of SiO2 Atomic Layer Deposition |
2 | Electrical Characteristics of p-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-nm Phosphosilicate Glass |
3 | Design and development of nanoimprint-enabled structures for molecular motor devices |
4 | Flexible insulator of hollow SiO2 spheres and polyimide hybrid for flexible OLED |
5 | Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP) |
6 | Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation |
7 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
8 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
9 | Applications of nanoNewton dielectrophoretic forces using atomic layer deposited oxides for microfluidic sample preparation and proteomics |
10 | Energy-enhanced atomic layer deposition for more process and precursor versatility |
11 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
12 | A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition |
13 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
14 | Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors |
15 | A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD |
16 | High-Reflective Coatings For Ground and Space Based Applications |
17 | Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 |
18 | Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes |
19 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
20 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
21 | Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide |
22 | Index matching at the nanoscale: light scattering by core-shell Si/SiOx nanowires |
23 | Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors |
24 | Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride |
25 | Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide |
26 | On the role of nanoporosity in controlling the performance of moisture permeation barrier layers |
27 | Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper |
28 | Residual stress study of thin films deposited by atomic layer deposition |
29 | Spectral analysis of sidewall roughness during resist-core self-aligned double patterning integration |
30 | Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor |
31 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
32 | Innovative scatterometry approach for self-aligned quadruple patterning (SAQP) process control |
33 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
34 | Via sidewall insulation for through cell via contacts |
35 | Atomic layer deposition of metal-oxide thin films on cellulose fibers |
36 | High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane |
37 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
38 | A study on film thickness control of vertical flow showerhead reactor for RF plasma deposition |
39 | PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads |
40 | Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers |
41 | 3D structure evolution using metastable atomic layer deposition based on planar silver templates |
42 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
43 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
44 | Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition |
45 | Order of Dry and Wet Mixed-Length Self-Assembled Monolayers |
46 | Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features |
47 | Surface oxidation model in plasma enhanced atomic layer deposition for silicon oxide films including various aminosilane precursors |
48 | Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells |
49 | Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices |
50 | Bottom-up plasma-enhanced atomic layer deposition of SiO2 by utilizing growth inhibition using NH3 plasma pre-treatment for seamless gap-fill process |
51 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
52 | Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors |
53 | Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook |
54 | Improved film quality of plasma enhanced atomic layer deposition SiO2 using plasma treatment cycle |
55 | Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle |
56 | An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon |
57 | Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor |
58 | Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current |
59 | A fully integrated electronic platform for multiplexed intermolecular force spectroscopy |
60 | High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical |
61 | Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition |
62 | Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes |
63 | Fabrication of nanoporous membranes for tuning microbial interactions and biochemical reactions |
64 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
65 | Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator |
66 | Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors |
67 | Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition |
68 | Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer |
69 | Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor |
70 | Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1-x)2O3 for x = 0.25-0.74 |
71 | Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors |
72 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
73 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
74 | Modal properties of a strip-loaded horizontal slot waveguide |
75 | Gate Insulator for High Mobility Oxide TFT |
76 | Plasma enhanced atomic layer deposited silicon dioxide with divalent Si precursor [N,N'-tert-butyl-1,1-dimethylethylenediamine silylene] |
77 | Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System |
78 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
79 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
80 | Optical properties and bandgap evolution of ALD HfSiOx films |
81 | Comparative study of ALD SiO2 thin films for optical applications |
82 | Room temperature CO2 detection using interdigitated capacitors with heteropolysiloxane sensing films |
83 | Impact of degradable nanowires on long-term brain tissue responses |
84 | GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope |
85 | Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics |
86 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
87 | Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor |
88 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
89 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
90 | Simultaneous scanning tunneling microscopy and synchrotron X-ray measurements in a gas environment |
91 | Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes |
92 | Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process |
93 | Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors |
94 | Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material |
95 | Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications |
96 | Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice |
97 | Graphene-based bimorphs for micron-sized, autonomous origami machines |
98 | Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices |
99 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
100 | Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01) |
101 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
102 | Propagating gene expression fronts in a one-dimensional coupled system of artificial cells |
103 | Chemical reactions during plasma-enhanced atomic layer deposition of SiO2 films employing aminosilane and O2/Ar plasma at 50°C |
104 | Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition |
105 | Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma |
106 | Plasma enhanced atomic layer deposition of SiNx:H and SiO2 |
107 | Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach |
108 | Non-destructive acoustic metrology and void detection in 3x50μm TSV |
109 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
110 | Designing high performance precursors for atomic layer deposition of silicon oxide |
111 | Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2 |
112 | Multiplexed actuation using ultra dielectrophoresis for proteomics applications: a comprehensive electrical and electrothermal design methodology |
113 | Effect of Plasma Power of Plasma Enhanced Atomic Layer Deposition Process for Gate Insulator Deposition in Top-Gate Thin-Film Transistors |
114 | 'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition |
115 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
116 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
117 | Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate |
118 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
119 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
120 | Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology |
121 | Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance |
122 | Internal Photoemission Spectroscopy Measurements of the Energy Barrier Heights between ALD SiO2 and Ta-Based Amorphous Metals |
123 | Macro-conformality of coatings deposited using high-speed spatial plasma-enhanced atomic layer deposition |
124 | Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators |
125 | A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology |
126 | Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2 |
127 | Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3 |
128 | Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions |
129 | Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3 |
130 | Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN |
131 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
132 | Single-Cell Photonic Nanocavity Probes |
133 | Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO2 and TiO2 |
134 | Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma |
135 | Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties |
136 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
137 | Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2 |
138 | HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition |
139 | Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns |
140 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
141 | Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO2 Studied by Gas-Phase Infrared and Optical Emission Spectroscopy |
142 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
143 | Programmable on-chip DNA compartments as artificial cells |