1 | Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: Impact on the growth per cycle and wet etch rate |
2 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
3 | Multiplexed actuation using ultra dielectrophoresis for proteomics applications: a comprehensive electrical and electrothermal design methodology |
4 | Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors |
5 | Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO2 Studied by Gas-Phase Infrared and Optical Emission Spectroscopy |
6 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
7 | Atomic layer deposition of B2O3/SiO2 thin films and their application in an efficient diffusion doping process |
8 | Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1-x)2O3 for x = 0.25-0.74 |
9 | On the role of nanoporosity in controlling the performance of moisture permeation barrier layers |
10 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
11 | Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2 |
12 | Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications |
13 | Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells |
14 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
15 | Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance |
16 | Influence of Pre and Post-treatments on Plasma Enhanced ALD SiO2 and Al2O3 layers on GaN |
17 | Plasma enhanced atomic layer deposition of SiNx:H and SiO2 |
18 | Simultaneous scanning tunneling microscopy and synchrotron X-ray measurements in a gas environment |
19 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
20 | Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators |
21 | Boosting n-Type Doping Levels of Ge With Co-Doping by Integrating Plasma-Assisted Atomic Layer Deposition and Flash Annealing Process |
22 | Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer |
23 | Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices |
24 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
25 | Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors |
26 | Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook |
27 | Antireflection Coating on PMMA Substrates by Atomic Layer Deposition |
28 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
29 | Via sidewall insulation for through cell via contacts |
30 | GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope |
31 | Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition |
32 | Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3 |
33 | Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition |
34 | Trapped charge densities in Al2O3-based silicon surface passivation layers |
35 | Theoretical Understanding of the Reaction Mechanism of SiO2 Atomic Layer Deposition |
36 | PEALD of SiO2 and Al2O3 Thin Films on Polypropylene: Investigations of the Film Growth at the Interface, Stress, and Gas Barrier Properties of Dyads |
37 | Atomic layer deposition of metal-oxide thin films on cellulose fibers |
38 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
39 | An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon |
40 | Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide |
41 | Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors |
42 | Non-destructive acoustic metrology and void detection in 3x50μm TSV |
43 | Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper |
44 | A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology |
45 | Propagating gene expression fronts in a one-dimensional coupled system of artificial cells |
46 | Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor |
47 | Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2 |
48 | Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology |
49 | Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice |
50 | High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical |
51 | Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices |
52 | Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes |
53 | High-Reflective Coatings For Ground and Space Based Applications |
54 | Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition |
55 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
56 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
57 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
58 | Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor |
59 | Programmable on-chip DNA compartments as artificial cells |
60 | Plasma Enhanced Atomic Layer Deposition of SiO2 Using Space-Divided Plasma System |
61 | Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes |
62 | Effect of Plasma Power of Plasma Enhanced Atomic Layer Deposition Process for Gate Insulator Deposition in Top-Gate Thin-Film Transistors |
63 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
64 | Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma |
65 | Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns |
66 | Atomic layer deposition for spacer defined double patterning of sub-10 nm titanium dioxide features |
67 | Internal Photoemission Spectroscopy Measurements of the Energy Barrier Heights between ALD SiO2 and Ta-Based Amorphous Metals |
68 | Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma |
69 | Impact of degradable nanowires on long-term brain tissue responses |
70 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
71 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
72 | Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition |
73 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
74 | Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors |
75 | Design and development of nanoimprint-enabled structures for molecular motor devices |
76 | Optical properties and bandgap evolution of ALD HfSiOx films |
77 | Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation |
78 | Innovative scatterometry approach for self-aligned quadruple patterning (SAQP) process control |
79 | Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle |
80 | Improved film quality of plasma enhanced atomic layer deposition SiO2 using plasma treatment cycle |
81 | Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material |
82 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
83 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
84 | Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride |
85 | Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP) |
86 | Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 |
87 | Index matching at the nanoscale: light scattering by core-shell Si/SiOx nanowires |
88 | Nanometer-Thick Conformal Pore Sealing of Self-Assembled Mesoporous Silica by Plasma-Assisted Atomic Layer Deposition |
89 | Order of Dry and Wet Mixed-Length Self-Assembled Monolayers |
90 | Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties |
91 | Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3 |
92 | A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition |
93 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
94 | 3D structure evolution using metastable atomic layer deposition based on planar silver templates |
95 | Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors |
96 | Plasma-enhanced atomic layer deposition of silicon dioxide films using plasma-activated triisopropylsilane as a precursor |
97 | A study on film thickness control of vertical flow showerhead reactor for RF plasma deposition |
98 | Flexible insulator of hollow SiO2 spheres and polyimide hybrid for flexible OLED |
99 | Electrical Characteristics of p-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-nm Phosphosilicate Glass |
100 | Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors |
101 | Single-Cell Photonic Nanocavity Probes |
102 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
103 | HfO2/SiO2 anti-reflection films for UV lasers via plasma-enhanced atomic layer deposition |
104 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
105 | Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2 |
106 | Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies |
107 | Comparative study of ALD SiO2 thin films for optical applications |
108 | Symmetrical Al2O3-based passivation layers for p- and n-type silicon |
109 | Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2 |
110 | Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers |
111 | Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes |
112 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
113 | On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes |
114 | Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics |
115 | 'Zero-charge' SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition |
116 | Gate Insulator for High Mobility Oxide TFT |
117 | Surface oxidation model in plasma enhanced atomic layer deposition for silicon oxide films including various aminosilane precursors |
118 | Macro-conformality of coatings deposited using high-speed spatial plasma-enhanced atomic layer deposition |
119 | Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01) |
120 | Modal properties of a strip-loaded horizontal slot waveguide |
121 | Applications of nanoNewton dielectrophoretic forces using atomic layer deposited oxides for microfluidic sample preparation and proteomics |
122 | Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator |
123 | Spectral analysis of sidewall roughness during resist-core self-aligned double patterning integration |
124 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
125 | Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide |
126 | Designing high performance precursors for atomic layer deposition of silicon oxide |
127 | Fabrication of nanoporous membranes for tuning microbial interactions and biochemical reactions |
128 | Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD |
129 | Energy-enhanced atomic layer deposition for more process and precursor versatility |
130 | Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current |
131 | Graphene-based bimorphs for micron-sized, autonomous origami machines |
132 | A fully integrated electronic platform for multiplexed intermolecular force spectroscopy |
133 | Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach |
134 | Room temperature CO2 detection using interdigitated capacitors with heteropolysiloxane sensing films |
135 | A combinatorial approach to enhance barrier properties of thin films on polymers: Seeding and capping of PECVD thin films by PEALD |
136 | Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions |
137 | Chemical reactions during plasma-enhanced atomic layer deposition of SiO2 films employing aminosilane and O2/Ar plasma at 50°C |