Publication Information

Title:
Electrical Characteristics of p-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-nm Phosphosilicate Glass
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 9, PP. 1084-1087, 2016
Date:
2016-07-11

Author Information

Name Institution
Y. KikuchiIMEC
T. ChiarellaIMEC
D. De RoestASM Microchemistry Oy
T. BlanquartASM Microchemistry Oy
A. De KeersgieterIMEC
K. KenisIMEC
A. PeterIMEC
P. OngIMEC
E. Van BesienIMEC
Z. TaoIMEC
M. S. KimIMEC
S. KubicekIMEC
S. A. ChewIMEC
T. SchramIMEC
S. DemuynckIMEC
D. MocutaIMEC
D. MocutaIMEC
N. HoriguchiIMEC

Films

Plasma SiO2

Hardware used: Unknown


Film/Plasma Properties

Substrates

Keywords

Notes

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