Publication Information

Title: Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces

Type: Journal

Info: Phys. Status Solidi A 2018, 1700498

Date: 2017-10-17

DOI: http://dx.doi.org/10.1002/pssa.201700498

Author Information

Name

Institution

University of California - Davis

Arizona State University

University of California - Davis

University of California - Davis

University of California - Davis

Arizona State University

University of California - Davis

Films

Plasma Al2O3 using Unknown

Deposition Temperature Range N/A

6063-89-4

7782-44-7

Plasma SiO2 using Unknown

Deposition Temperature Range N/A

15112-89-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Breakdown Voltage

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Capacitance

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Border Trap Densities, NBT

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Transistor Characteristics

Transistor Characterization

Keithley 4200-SCS

Substrates

Keywords

Notes

1062



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