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Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces

Type:
Journal
Info:
Phys. Status Solidi A 2018, 1700498
Date:
2017-10-17
DOI:
http://dx.doi.org/10.1002/pssa.201700498

Author Information

Name Institution
Jianyi GaoUniversity of California - Davis
Mei HaoArizona State University
Wenwen LiUniversity of California - Davis
Zheng XuUniversity of California - Davis
Saptarshi MandalUniversity of California - Davis
Robert J. NemanichArizona State University
Srabanti ChowdhuryUniversity of California - Davis

Films

Plasma Al2O3

Hardware used: Unknown
DMAI, dimethylaluminum isopropoxide, Me2Al(O-i-Pr)3
CAS#: 6063-89-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma SiO2

Hardware used: Unknown
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Border Trap Densities, NBT
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Keithley 4200-SCS

Substrates

Notes

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