Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces

Type:
Journal
Info:
Phys. Status Solidi A 2018, 1700498
Date:
2017-10-17

Author Information

Name Institution
Jianyi GaoUniversity of California - Davis
Mei HaoArizona State University
Wenwen LiUniversity of California - Davis
Zheng XuUniversity of California - Davis
Saptarshi MandalUniversity of California - Davis
Robert J. NemanichArizona State University
Srabanti ChowdhuryUniversity of California - Davis

Films

Plasma Al2O3


Plasma SiO2


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Border Trap Densities, NBT
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Notes

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