Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
Type:
Journal
Info:
Phys. Status Solidi A 2018, 1700498
Date:
2017-10-17
Author Information
| Name | Institution |
|---|---|
| Jianyi Gao | University of California - Davis |
| Mei Hao | Arizona State University |
| Wenwen Li | University of California - Davis |
| Zheng Xu | University of California - Davis |
| Saptarshi Mandal | University of California - Davis |
| Robert J. Nemanich | Arizona State University |
| Srabanti Chowdhury | University of California - Davis |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Border Trap Densities, NBT
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
Notes
| 1062 |