3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane, CAS# 15112-89-7

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1EreztechTris(dimethylamino)silane (99.8%-Si)

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 64 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
2Composite materials and nanoporous thin layers made by atomic layer deposition
3Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
4Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells
5Annealing behavior of ferroelectric Si-doped HfO2 thin films
6Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
7Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
8Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
9Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
10Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
11Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
12Optical properties and bandgap evolution of ALD HfSiOx films
13TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
14The effects of layering in ferroelectric Si-doped HfO2 thin films
15Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
16Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
17Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
18Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
19Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
20Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
21Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction
22Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms
23Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces
24Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
25An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon
26Antireflection Coating on PMMA Substrates by Atomic Layer Deposition
27Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
28Applications of nanoNewton dielectrophoretic forces using atomic layer deposited oxides for microfluidic sample preparation and proteomics
29Atomic layer deposition of metal-oxide thin films on cellulose fibers
30Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3
31Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
32Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
33Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer
34Comparative study of ALD SiO2 thin films for optical applications
35Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
36Correlation between SiO2 growth rate and difference in electronegativity of metal-oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor
37Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide
38Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
39Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
40Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance
41High-Reflective Coatings For Ground and Space Based Applications
42Index matching at the nanoscale: light scattering by core-shell Si/SiOx nanowires
43Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
44Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
45Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
46Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors
47Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings
48Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes
49Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
50Multiplexed actuation using ultra dielectrophoresis for proteomics applications: a comprehensive electrical and electrothermal design methodology
51Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching
52Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors
53Optical properties and bandgap evolution of ALD HfSiOx films
54Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells
55Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material
56Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current
57Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
58Single-Cell Photonic Nanocavity Probes
59Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
60Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01)
61Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction
62Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride
63Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
64Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction