| 1 | Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy |
| 2 | Composite materials and nanoporous thin layers made by atomic layer deposition |
| 3 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
| 4 | Room-temperature plasma enhanced atomic layer deposition of aluminum silicate and its application in dye-sensitized solar cells |
| 5 | Annealing behavior of ferroelectric Si-doped HfO2 thin films |
| 6 | Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3 |
| 7 | Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3 |
| 8 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
| 9 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
| 10 | Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes |
| 11 | Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition |
| 12 | Optical properties and bandgap evolution of ALD HfSiOx films |
| 13 | TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films |
| 14 | The effects of layering in ferroelectric Si-doped HfO2 thin films |
| 15 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
| 16 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 17 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
| 18 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 19 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
| 20 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
| 21 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |
| 22 | Al2O3 and SiO2 Atomic Layer Deposition Layers on ZnO Photoanodes and Degradation Mechanisms |
| 23 | Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces |
| 24 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
| 25 | Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition |
| 26 | Applications of nanoNewton dielectrophoretic forces using atomic layer deposited oxides for microfluidic sample preparation and proteomics |
| 27 | Atomic layer deposition of metal-oxide thin films on cellulose fibers |
| 28 | Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3 |
| 29 | Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3 |
| 30 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
| 31 | Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer |
| 32 | Comparative study of ALD SiO2 thin films for optical applications |
| 33 | Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study |
| 34 | Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide |
| 35 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
| 36 | Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 |
| 37 | Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance |
| 38 | High-Reflective Coatings For Ground and Space Based Applications |
| 39 | Index matching at the nanoscale: light scattering by core-shell Si/SiOx nanowires |
| 40 | Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition |
| 41 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
| 42 | Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors |
| 43 | Lifetime improvement of micro-fabricated alkali vapor cells by atomic layer deposited wall coatings |
| 44 | Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes |
| 45 | Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications |
| 46 | Multiplexed actuation using ultra dielectrophoresis for proteomics applications: a comprehensive electrical and electrothermal design methodology |
| 47 | Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching |
| 48 | Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors |
| 49 | Optical properties and bandgap evolution of ALD HfSiOx films |
| 50 | Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells |
| 51 | Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material |
| 52 | Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current |
| 53 | Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD |
| 54 | Single-Cell Photonic Nanocavity Probes |
| 55 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
| 56 | Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO2 and β-Ga2O3 (2̅01) |
| 57 | Steady-state Thermal Conductivity Measurement of Dielectric Stacks for Phase-Change Memory Power Reduction |
| 58 | Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride |
| 59 | Thermal conductivity measurement of amorphous dielectric multilayers for phase-change memory power reduction |