Publication Information

Title:
Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2019 volume 8, issue 7, Q3001-Q3006
Date:
2018-11-24
DOI:
http://dx.doi.org/10.1149/2.0021907jss

Author Information

Name Institution
Chaker FaresUniversity of Florida
Fan RenUniversity of Florida
David HaysUniversity of Florida
Brent P. GilaUniversity of Florida
S. J. PeartonUniversity of Florida

Films

Plasma SiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Physical Electronics PHI 5100 ESCA

Characteristic: Valence Band
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Physical Electronics PHI 5100 ESCA

Characteristic: Band Gap
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy
Diagnostic: -

Substrates

AlGaO

Keywords

Notes

1220