Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2019 volume 8, issue 7, Q3001-Q3006
Date:
2018-11-24
Author Information
| Name | Institution |
|---|---|
| Chaker Fares | University of Florida |
| Fan Ren | University of Florida |
| David Hays | University of Florida |
| Brent P. Gila | University of Florida |
| S. J. Pearton | University of Florida |
Films
Plasma SiO2
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Valence Band
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Band Gap
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy
Substrates
| AlGaO |
Notes
| 1220 |