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Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
Probing the Origin and Suppression of Vertically Oriented Nanostructures of 2D WS2 Layers
Edge-Site Nanoengineering of WS2 by Low-Temperature Plasma-Enhanced Atomic Layer Deposition for Electrocatalytic Hydrogen Evolution
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Publication Information
Title:
Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2019 volume 8, issue 7, Q3001-Q3006
Date:
2018-11-24
Author Information
| Name | Institution |
|---|---|
| Chaker Fares | University of Florida |
| Fan Ren | University of Florida |
| David Hays | University of Florida |
| Brent P. Gila | University of Florida |
| S. J. Pearton | University of Florida |
Films
Plasma SiO2
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Valence Band
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Band Gap
Analysis: REELS, Reflection Electron Energy Loss Spectroscopy
Substrates
| AlGaO |
Keywords
Notes
| 1220 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |