Veeco - Ultratech - Cambridge NanoTech Fiji Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications using Veeco - Ultratech - Cambridge NanoTech Fiji hardware returned 218 records. If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
2A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
3A fully integrated electronic platform for multiplexed intermolecular force spectroscopy
4A high-density carbon fiber neural recording array technology
5Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
6Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
7ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
8ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
9ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
10ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
11ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
12AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
13AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
14AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
15AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
16Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
17Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
18Annealing behavior of ferroelectric Si-doped HfO2 thin films
19Antireflection In2O3 coatings of self-organized TiO2 nanotube layers prepared by atomic layer deposition
20Applications of nanoNewton dielectrophoretic forces using atomic layer deposited oxides for microfluidic sample preparation and proteomics
21Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
22Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
23Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices
24Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
25Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
26Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
27Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
28Atomic layer deposition of GaN at low temperatures
29Atomic layer deposition of metal-oxide thin films on cellulose fibers
30Atomic Layer Deposition of the Solid Electrolyte LiPON
31Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
32Atomic layer deposition of titanium nitride for quantum circuits
33Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
34Atomic layer epitaxy for quantum well nitride-based devices
35Band alignment of Al2O3 with (-201) β-Ga2O3
36Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3
37Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
38Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
39Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
40Biofilm prevention on cochlear implants
41Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
42Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
43Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
44Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
45Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
46Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
47Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques
48Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
49Damage evaluation in graphene underlying atomic layer deposition dielectrics
50Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
51DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
52Design and development of nanoimprint-enabled structures for molecular motor devices
53Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide
54Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
55Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
56Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
57Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
58Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
59Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
60Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
61Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
62Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
63Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
64Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
65Efficient Modification of Metal Oxide Surfaces with Phosphonic Acids by Spray Coating
66Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
67Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance
68Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays
69Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
70Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
71Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
72Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
73Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements
74Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
75Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
76Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
77Fiber-matrix interface reinforcement using Atomic Layer Deposition
78Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
79Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
80Fully CMOS-compatible titanium nitride nanoantennas
81GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
82Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
83Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
84Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
85Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition
86High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
87High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
88Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
89Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
90Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
91Impact of degradable nanowires on long-term brain tissue responses
92Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
93Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
94Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
95Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
96Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
97Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
98Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
99In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
100In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
101Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
102Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
103Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
104Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
105Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
106Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
107Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
108Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
109Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
110Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics
111Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors
112Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
113Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
114Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes
115Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
116Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
117Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
118Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
119Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
120Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
121Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
122Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
123Mechanical properties of thin-film Parylene-metal-Parylene devices
124Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
125Multiplexed actuation using ultra dielectrophoresis for proteomics applications: a comprehensive electrical and electrothermal design methodology
126Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors
127Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
128Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
129New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
130Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
131Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
132Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
133Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
134P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
135Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
136Passivation effects of atomic-layer-deposited aluminum oxide
137Perspectives on future directions in III-N semiconductor research
138Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
139Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
140Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
141Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
142Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
143Plasma-enhanced atomic layer deposition of superconducting niobium nitride
144Plasma-enhanced atomic layer deposition of titanium vanadium nitride
145Plasma-enhanced atomic layer deposition of tungsten nitride
146Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
147Plasma-enhanced atomic layer deposition of vanadium nitride
148Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
149Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
150Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
151Programmable on-chip DNA compartments as artificial cells
152Propagating gene expression fronts in a one-dimensional coupled system of artificial cells
153Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
154Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
155Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
156Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
157Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
158Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
159Self-Limiting Growth of GaN at Low Temperatures
160Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
161Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
162Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
163Single-Cell Photonic Nanocavity Probes
164Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
165Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
166Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
167Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
168Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
169Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
170Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
171Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
172Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
173Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
174Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
175Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces
176TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
177Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
178The Effects of an O2 Plasma on the Optical Properties of Atomic Layer Deposited ZnO
179The effects of layering in ferroelectric Si-doped HfO2 thin films
180The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells
181The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
182The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
183The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
184The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
185Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells
186Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
187Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
188Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
189Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
190Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
191Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
192Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode
193Using top graphene layer as sacrificial protection during dielectric atomic layer deposition


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