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Cambridge NanoTech Fiji Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications using Cambridge NanoTech Fiji hardware returned 165 records. If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
2Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
3ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
4ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
5ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
6ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
7AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
8AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
9AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
10Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
11Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
12Annealing behavior of ferroelectric Si-doped HfO2 thin films
13Antireflection In2O3 coatings of self-organized TiO2 nanotube layers prepared by atomic layer deposition
14Applications of nanoNewton dielectrophoretic forces using atomic layer deposited oxides for microfluidic sample preparation and proteomics
15Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
16Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
17Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
18Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
19Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
20Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
21Atomic layer deposition of GaN at low temperatures
22Atomic Layer Deposition of the Solid Electrolyte LiPON
23Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
24Atomic layer epitaxy for quantum well nitride-based devices
25Band alignment of Al2O3 with (-201) β-Ga2O3
26Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
27Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
28Biofilm prevention on cochlear implants
29Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
30Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
31Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
32Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
33Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
34Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
35Damage evaluation in graphene underlying atomic layer deposition dielectrics
36Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
37DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
38Demonstration of flexible thin film transistors with GaN channels
39Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
40Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
41Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
42Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
43Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
44Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
45Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
46Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
47Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
48Electrical characteristics of β-Ga2O3 thin films grown by PEALD
49Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
50Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays
51Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
52Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
53Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
54Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
55Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
56Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
57Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
58Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
59Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
60Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
61Fully CMOS-compatible titanium nitride nanoantennas
62GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
63Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
64Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
65Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
66High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
67High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
68Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
69Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
70Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
71Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
72Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
73Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
74Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
75Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
76Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
77Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
78Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
79Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
80Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
81Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
82Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
83Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
84Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
85Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
86Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics
87Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors
88Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
89Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
90Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
91Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
92Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
93Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
94Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
95Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
96Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
97Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
98Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
99Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
100Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
101Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
102Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
103Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
104Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
105Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors
106Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
107New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
108Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
109Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
110Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
111Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
112Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
113Passivation effects of atomic-layer-deposited aluminum oxide
114Perspectives on future directions in III-N semiconductor research
115Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
116Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
117Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
118Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
119Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
120Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
121Plasma-enhanced atomic layer deposition of superconducting niobium nitride
122Plasma-enhanced atomic layer deposition of tungsten nitride
123Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
124Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
125Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
126Programmable on-chip DNA compartments as artificial cells
127Propagating gene expression fronts in a one-dimensional coupled system of artificial cells
128Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
129Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
130Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
131Self-Limiting Growth of GaN at Low Temperatures
132Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
133Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
134Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
135Single-Cell Photonic Nanocavity Probes
136Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
137Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
138Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
139Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
140Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
141Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
142Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
143Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
144Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
145Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
146Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
147Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
148Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
149Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces
150TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
151Template-assisted synthesis of III-nitride and metal-oxide nano-heterostructures using low-temperature atomic layer deposition for energy, sensing, and catalysis applications (Presentation Recording)
152Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
153The Effects of an O2 Plasma on the Optical Properties of Atomic Layer Deposited ZnO
154The effects of layering in ferroelectric Si-doped HfO2 thin films
155The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells
156The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
157The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
158The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
159The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
160Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
161Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
162Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
163Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
164Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode
165Using top graphene layer as sacrificial protection during dielectric atomic layer deposition

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