Veeco - Ultratech - Cambridge NanoTech Fiji Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications using Veeco - Ultratech - Cambridge NanoTech Fiji hardware returned 261 records. If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
2Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure
3Plasma-enhanced atomic layer deposition of tungsten nitride
4Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C
5ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
6The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
7Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
8Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
9Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy
10Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
11Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge
12Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
13Passivation effects of atomic-layer-deposited aluminum oxide
14Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
15Multiplexed actuation using ultra dielectrophoresis for proteomics applications: a comprehensive electrical and electrothermal design methodology
16Atomic layer deposition of metal-oxide thin films on cellulose fibers
17Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance
18Impact of degradable nanowires on long-term brain tissue responses
19Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
20Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors
21ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
22Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes
23Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
24Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
25Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
26Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
27Mechanical properties of thin-film Parylene-metal-Parylene devices
28Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
29Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
30Atomic layer epitaxy for quantum well nitride-based devices
31Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces
32Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
33GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
34Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
35Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
36Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide
37Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
38Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
39Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
40A fully integrated electronic platform for multiplexed intermolecular force spectroscopy
41Plasma-enhanced atomic layer deposition of superconducting niobium nitride
42Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays
43Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
44Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
45In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
46A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
47Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
48Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
49Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
50Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
51Applications of nanoNewton dielectrophoretic forces using atomic layer deposited oxides for microfluidic sample preparation and proteomics
52Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition
53Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
54P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping
55Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
56High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
57Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition
58Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
59Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
60Band alignment of Al2O3 with (-201) β-Ga2O3
61Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques
62AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
63Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
64Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
65Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
66Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
67Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
68Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
69Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
70Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode
71Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries
72Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors
73A high-density carbon fiber neural recording array technology
74Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
75Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
76Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
77Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions
78Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
79Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells
80Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
81Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
82Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
83Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
84Sub-7-nm textured ZrO2 with giant ferroelectricity
85Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods
86A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition
87Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
88Plasma-enhanced atomic layer deposition of titanium vanadium nitride
89Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
90ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
91Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
92Damage evaluation in graphene underlying atomic layer deposition dielectrics
93Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
94Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy
95Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
96Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements
97Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
98Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
99Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
100Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide
101Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes
102Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications
103Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
104Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
105Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors
106New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
107Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution
108Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
109Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
110Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
111Propagating gene expression fronts in a one-dimensional coupled system of artificial cells
112Atomic Layer Deposition of the Solid Electrolyte LiPON
113The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells
114Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
115The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
116Efficient Modification of Metal Oxide Surfaces with Phosphonic Acids by Spray Coating
117Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
118Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
119Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
120Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices
121Performance of Samples with Novel SRF Materials and Growth Techniques
122Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect
123The Effects of an O2 Plasma on the Optical Properties of Atomic Layer Deposited ZnO
124Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators
125Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
126Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
127Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
128Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
129Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition
130Lithium-Iron (III) Fluoride Battery with Double Surface Protection
131Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
132Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
133Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
134High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
135AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
136Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
137Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
138Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN
139Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices
140Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
141Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics
142Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries
143Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
144Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
145Antireflection In2O3 coatings of self-organized TiO2 nanotube layers prepared by atomic layer deposition
146Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
147Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
148Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition
149Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
150Fully CMOS-compatible titanium nitride nanoantennas
151Atomic layer deposition of GaN at low temperatures
152Atomic layer deposition of titanium nitride for quantum circuits
153Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
154Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
155Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN
156Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology
157Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
158AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
159Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition
160Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
161Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions
162Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
163Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
164Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3
165Impact of interface materials on side permeation in indirect encapsulation of organic electronics
166In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
167The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
168TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
169Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
170Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1-x)2O3 for x = 0.25-0.74
171Fiber-matrix interface reinforcement using Atomic Layer Deposition
172Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
173ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
174Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques
175The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
176Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
177The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
178Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
179Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
180Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
181Annealing behavior of ferroelectric Si-doped HfO2 thin films
182Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
183Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
184Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
185The effects of layering in ferroelectric Si-doped HfO2 thin films
186An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon
187Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
188Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
189Design and development of nanoimprint-enabled structures for molecular motor devices
190Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
191Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
192Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
193Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
194Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
195Single-Cell Photonic Nanocavity Probes
196Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
197Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
198Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
199Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces
200Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
201Sub-nanometer heating depth of atomic layer annealing
202Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films
203Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
204DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
205Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition
206AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
207Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition
208In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
209Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
210Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
211Molybdenum Disulfide Catalytic Coatings via Atomic Layer Deposition for Solar Hydrogen Production from Copper Gallium Diselenide Photocathodes
212Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
213Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
214Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
215Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
216Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
217Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
218Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films
219Perspectives on future directions in III-N semiconductor research
220Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions
221Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
222Programmable on-chip DNA compartments as artificial cells
223Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
224Self-Limiting Growth of GaN at Low Temperatures
225Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
226Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
227Plasma-enhanced atomic layer deposition of vanadium nitride
228Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
229ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
230Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
231Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
232Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
233Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
234Biofilm prevention on cochlear implants
235On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR