| 1 | Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing |
| 2 | Applications of nanoNewton dielectrophoretic forces using atomic layer deposited oxides for microfluidic sample preparation and proteomics |
| 3 | Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 |
| 4 | Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition |
| 5 | Sub-7-nm textured ZrO2 with giant ferroelectricity |
| 6 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
| 7 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
| 8 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
| 9 | RF Characterization of Novel Superconducting Materials and Multilayers |
| 10 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
| 11 | Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition |
| 12 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
| 13 | Atomic layer deposition of metal-oxide thin films on cellulose fibers |
| 14 | Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition |
| 15 | Nonvolatile Capacitive Crossbar Array for In-Memory Computing |
| 16 | DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air |
| 17 | Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices |
| 18 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
| 19 | Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors |
| 20 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
| 21 | Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions |
| 22 | Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops |
| 23 | Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition |
| 24 | Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells |
| 25 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
| 26 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
| 27 | Plasma-enhanced atomic layer deposition of vanadium nitride |
| 28 | Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition |
| 29 | Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy |
| 30 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
| 31 | High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
| 32 | Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma |
| 33 | Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition |
| 34 | Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium |
| 35 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
| 36 | Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide |
| 37 | ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors |
| 38 | Plasma-enhanced atomic layer deposition of tungsten nitride |
| 39 | AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD |
| 40 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
| 41 | Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization |
| 42 | ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent |
| 43 | In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells |
| 44 | Impact of interface materials on side permeation in indirect encapsulation of organic electronics |
| 45 | Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties |
| 46 | Atomic layer epitaxy for quantum well nitride-based devices |
| 47 | Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor |
| 48 | A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz |
| 49 | Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD |
| 50 | ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices |
| 51 | The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition |
| 52 | Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping |
| 53 | Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition |
| 54 | Design and development of nanoimprint-enabled structures for molecular motor devices |
| 55 | TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films |
| 56 | Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques |
| 57 | Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition |
| 58 | Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy |
| 59 | Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology |
| 60 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
| 61 | Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry |
| 62 | Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition |
| 63 | New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping |
| 64 | Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 65 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
| 66 | Antireflection In2O3 coatings of self-organized TiO2 nanotube layers prepared by atomic layer deposition |
| 67 | AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD |
| 68 | Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3 |
| 69 | Atomic layer deposition of GaN at low temperatures |
| 70 | Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy |
| 71 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
| 72 | Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices |
| 73 | Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes |
| 74 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
| 75 | Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries |
| 76 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
| 77 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments |
| 78 | Nanoscale Encapsulation of Hybrid Perovskites Using Hybrid Atomic Layer Deposition |
| 79 | Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode |
| 80 | Perspectives on future directions in III-N semiconductor research |
| 81 | Fiber-matrix interface reinforcement using Atomic Layer Deposition |
| 82 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
| 83 | Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer |
| 84 | Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors |
| 85 | Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application |
| 86 | Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique |
| 87 | Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition |
| 88 | Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries |
| 89 | Passivation effects of atomic-layer-deposited aluminum oxide |
| 90 | Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures |
| 91 | Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition |
| 92 | Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods |
| 93 | Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition |
| 94 | Band alignment of Al2O3 with (-201) β-Ga2O3 |
| 95 | Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques |
| 96 | Self-Limiting Growth of GaN at Low Temperatures |
| 97 | Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors |
| 98 | Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology |
| 99 | Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC) |
| 100 | Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition |
| 101 | Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures |
| 102 | Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements |
| 103 | Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy |
| 104 | Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum |
| 105 | Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 106 | Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 107 | Atomic Layer Deposition of the Solid Electrolyte LiPON |
| 108 | On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR |
| 109 | Single-Cell Photonic Nanocavity Probes |
| 110 | An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon |
| 111 | Fully CMOS-compatible titanium nitride nanoantennas |
| 112 | Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films |
| 113 | Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting |
| 114 | Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition |
| 115 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
| 116 | The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain |
| 117 | Plasma-enhanced atomic layer deposition of ruthenium metal on free-standing carbon nanotube forest for 3D flexible binder-less supercapacitor electrodes |
| 118 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
| 119 | Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry |
| 120 | Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase |
| 121 | A fully integrated electronic platform for multiplexed intermolecular force spectroscopy |
| 122 | Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures |
| 123 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 124 | Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes |
| 125 | Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation |
| 126 | Mechanical properties of thin-film Parylene-metal-Parylene devices |
| 127 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
| 128 | Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability |
| 129 | Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces |
| 130 | Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers |
| 131 | Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes |
| 132 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
| 133 | Sub-nanometer heating depth of atomic layer annealing |
| 134 | Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium |
| 135 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |
| 136 | Lithium-Iron (III) Fluoride Battery with Double Surface Protection |
| 137 | Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes |
| 138 | Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy |
| 139 | Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes |
| 140 | Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device |
| 141 | Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique |
| 142 | Efficient Modification of Metal Oxide Surfaces with Phosphonic Acids by Spray Coating |
| 143 | Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN |
| 144 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
| 145 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
| 146 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
| 147 | The effects of layering in ferroelectric Si-doped HfO2 thin films |
| 148 | Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors |
| 149 | Performance of Samples with Novel SRF Materials and Growth Techniques |
| 150 | Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics |
| 151 | Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces |
| 152 | Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices |
| 153 | Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge |
| 154 | Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure |
| 155 | Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance |
| 156 | Propagating gene expression fronts in a one-dimensional coupled system of artificial cells |
| 157 | Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2 |
| 158 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
| 159 | Programmable on-chip DNA compartments as artificial cells |
| 160 | Biofilm prevention on cochlear implants |
| 161 | Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting |
| 162 | Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting |
| 163 | Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy |
| 164 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
| 165 | The Effects of an O2 Plasma on the Optical Properties of Atomic Layer Deposited ZnO |
| 166 | Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition |
| 167 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
| 168 | Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices |
| 169 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
| 170 | Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source |
| 171 | Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements |
| 172 | Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition |
| 173 | ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors |
| 174 | Low temperature plasma-enhanced atomic layer deposition of sodium phosphorus oxynitride with tunable nitrogen content |
| 175 | Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3 |
| 176 | Plasma-enhanced atomic layer deposition of superconducting niobium nitride |
| 177 | Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys |
| 178 | Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact |
| 179 | Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3 |
| 180 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
| 181 | Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries |
| 182 | A high-density carbon fiber neural recording array technology |
| 183 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 184 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
| 185 | Multiplexed actuation using ultra dielectrophoresis for proteomics applications: a comprehensive electrical and electrothermal design methodology |
| 186 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
| 187 | In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics |
| 188 | Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition |
| 189 | AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing |
| 190 | Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films |
| 191 | Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution |
| 192 | Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition |
| 193 | Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries |
| 194 | ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications |
| 195 | Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors |
| 196 | Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation |
| 197 | Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films |
| 198 | Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics |
| 199 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
| 200 | Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems |
| 201 | Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires |
| 202 | The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition |
| 203 | Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition |
| 204 | The role of plasma in plasma-enhanced atomic layer deposition of crystalline films |
| 205 | Annealing behavior of ferroelectric Si-doped HfO2 thin films |
| 206 | Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers |
| 207 | Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition |
| 208 | Impact of degradable nanowires on long-term brain tissue responses |
| 209 | Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition |
| 210 | Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN |
| 211 | Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes |
| 212 | Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films |
| 213 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy |
| 214 | Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition |
| 215 | Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells |
| 216 | Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition |
| 217 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
| 218 | AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants |
| 219 | Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1-x)2O3 for x = 0.25-0.74 |
| 220 | Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays |
| 221 | Plasma-induced sub-10nm Au-SnO2-In2O3 heterostructures fabricated by atomic layer deposition for highly sensitive ethanol detection on ppm level |
| 222 | Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect |
| 223 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
| 224 | Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors |
| 225 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
| 226 | Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems |
| 227 | Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators |
| 228 | Molybdenum Disulfide Catalytic Coatings via Atomic Layer Deposition for Solar Hydrogen Production from Copper Gallium Diselenide Photocathodes |
| 229 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 230 | Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces |
| 231 | High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition |
| 232 | Damage evaluation in graphene underlying atomic layer deposition dielectrics |
| 233 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
| 234 | The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells |
| 235 | Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films |
| 236 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
| 237 | Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode |
| 238 | Using top graphene layer as sacrificial protection during dielectric atomic layer deposition |
| 239 | GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation |
| 240 | Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures |
| 241 | Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions |
| 242 | Atomic layer deposition of titanium nitride for quantum circuits |
| 243 | Comparison of passivation layers for AlGaN/GaN high electron mobility transistors |
| 244 | Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy |
| 245 | Ultrathin Surface Coating Enables the Stable Sodium Metal Anode |
| 246 | Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C |
