Veeco - Ultratech - Cambridge NanoTech Fiji Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications using Veeco - Ultratech - Cambridge NanoTech Fiji hardware returned 190 records. If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz
2A fully integrated electronic platform for multiplexed intermolecular force spectroscopy
3Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
4Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device
5ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent
6ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
7ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
8ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
9AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD
10AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
11AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
12Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
13Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
14Annealing behavior of ferroelectric Si-doped HfO2 thin films
15Antireflection In2O3 coatings of self-organized TiO2 nanotube layers prepared by atomic layer deposition
16Applications of nanoNewton dielectrophoretic forces using atomic layer deposited oxides for microfluidic sample preparation and proteomics
17Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
18Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
19Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
20Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
21Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
22Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
23Atomic layer deposition of GaN at low temperatures
24Atomic layer deposition of metal-oxide thin films on cellulose fibers
25Atomic Layer Deposition of the Solid Electrolyte LiPON
26Atomic layer deposition of titanium nitride for quantum circuits
27Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
28Atomic layer epitaxy for quantum well nitride-based devices
29Band alignment of Al2O3 with (-201) β-Ga2O3
30Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3
31Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3
32Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
33Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3
34Biofilm prevention on cochlear implants
35Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
36Comparison of passivation layers for AlGaN/GaN high electron mobility transistors
37Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
38Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition
39Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
40Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
41Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
42Damage evaluation in graphene underlying atomic layer deposition dielectrics
43Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
44DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
45Demonstration of flexible thin film transistors with GaN channels
46Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide
47Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability
48Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
49Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3
50Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition
51Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments
52Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
53Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition
54Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
55Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
56Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
57Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems
58Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
59Electrical characteristics of β-Ga2O3 thin films grown by PEALD
60Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition
61Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
62Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance
63Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays
64Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
65Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
66Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
67Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
68Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
69Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films
70Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
71Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
72Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
73Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation
74Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
75Fully CMOS-compatible titanium nitride nanoantennas
76GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
77Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
78Graphene as plasma-compatible blocking layer material for area-selective atomic layer deposition: A feasibility study for III-nitrides
79Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
80High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
81High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
82Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
83Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
84Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
85Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
86Impact of degradable nanowires on long-term brain tissue responses
87Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
88Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
89Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
90Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma
91Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
92Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
93Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
94In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
95In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
96Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
97Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
98Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
99Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy
100Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells
101Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
102Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
103Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics
104Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors
105Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
106Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
107Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes
108Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
109Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
110Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
111Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
112Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
113Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
114Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium
115Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
116Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
117Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
118Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
119Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
120Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
121Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes
122Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
123Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors
124Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors
125New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping
126Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
127Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor
128Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
129Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
130Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
131Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
132Passivation effects of atomic-layer-deposited aluminum oxide
133Perspectives on future directions in III-N semiconductor research
134Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
135Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
136Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
137Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
138Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
139Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
140Plasma-enhanced atomic layer deposition of superconducting niobium nitride
141Plasma-enhanced atomic layer deposition of titanium vanadium nitride
142Plasma-enhanced atomic layer deposition of tungsten nitride
143Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
144Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
145Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers
146Programmable on-chip DNA compartments as artificial cells
147Propagating gene expression fronts in a one-dimensional coupled system of artificial cells
148Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources
149Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition
150Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application
151Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
152Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
153Self-Limiting Growth of GaN at Low Temperatures
154Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
155Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
156Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers
157Single-Cell Photonic Nanocavity Probes
158Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
159Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
160Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
161Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
162Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
163Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
164Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
165Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
166Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition
167Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
168Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode
169Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure
170Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting
171Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces
172TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
173Template-assisted synthesis of III-nitride and metal-oxide nano-heterostructures using low-temperature atomic layer deposition for energy, sensing, and catalysis applications (Presentation Recording)
174Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
175The Effects of an O2 Plasma on the Optical Properties of Atomic Layer Deposited ZnO
176The effects of layering in ferroelectric Si-doped HfO2 thin films
177The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells
178The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
179The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
180The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain
181The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
182Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells
183Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry
184Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting
185Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
186Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
187Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
188Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
189Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode
190Using top graphene layer as sacrificial protection during dielectric atomic layer deposition


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