1 | Investigation of Atomic Layer Deposition Al2O3 Passivation for Screen-Printed Large-Area Solar Cells |
2 | Plasma-enhanced atomic layer deposition of titanium molybdenum nitride: Influence of RF bias and substrate structure |
3 | Plasma-enhanced atomic layer deposition of tungsten nitride |
4 | Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200°C |
5 | ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications |
6 | The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition |
7 | Process Control of Atomic Layer Deposition Molybdenum Oxide Nucleation and Sulfidation to Large-Area MoS2 Monolayers |
8 | Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films |
9 | Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy |
10 | Synthesis of bio-inspired multilayer polarizers and their application to anti-counterfeiting |
11 | Incorporating Yttrium into a GeO Interfacial Layer with HfO2-Based Gate Stack on Ge |
12 | Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD |
13 | Passivation effects of atomic-layer-deposited aluminum oxide |
14 | Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices |
15 | Multiplexed actuation using ultra dielectrophoresis for proteomics applications: a comprehensive electrical and electrothermal design methodology |
16 | Atomic layer deposition of metal-oxide thin films on cellulose fibers |
17 | Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance |
18 | Impact of degradable nanowires on long-term brain tissue responses |
19 | Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors |
20 | Nanoshape Imprint Lithography for Fabrication of Nanowire Ultracapacitors |
21 | ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices |
22 | Localized dielectric breakdown and antireflection coating in metal-oxide-semiconductor photoelectrodes |
23 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
24 | Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures |
25 | Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4 |
26 | Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact |
27 | Mechanical properties of thin-film Parylene-metal-Parylene devices |
28 | Effects of radiation and cryogenic temperatures on the electromechanical properties of materials used in microsystems |
29 | Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements |
30 | Atomic layer epitaxy for quantum well nitride-based devices |
31 | Self-aligned tip deinsulation of atomic layer deposited Al2O3 and parylene C coated Utah electrode array based neural interfaces |
32 | Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes |
33 | GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation |
34 | Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping |
35 | Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems |
36 | Dielectric barrier layers by low-temperature plasma-enhanced atomic layer deposition of silicon dioxide |
37 | Top-down fabrication of fluorine-doped tin oxide nanopillar substrates for solar water splitting |
38 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
39 | Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices |
40 | A fully integrated electronic platform for multiplexed intermolecular force spectroscopy |
41 | Plasma-enhanced atomic layer deposition of superconducting niobium nitride |
42 | Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays |
43 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
44 | Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition |
45 | In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells |
46 | A Capacitance-to-Frequency Converter with On-Chip Passivated Microelectrodes for Bacteria Detection in Saline Buffers up to 575 MHz |
47 | Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing |
48 | Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride |
49 | Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides |
50 | Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition |
51 | Applications of nanoNewton dielectrophoretic forces using atomic layer deposited oxides for microfluidic sample preparation and proteomics |
52 | Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition |
53 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
54 | P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping |
55 | Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability |
56 | High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors |
57 | Influence of the polymeric substrate on the water permeation of alumina barrier films deposited by atomic layer deposition |
58 | Nanotextured surfaces for surface enhanced Raman spectroscopy and sensors |
59 | Comparison of passivation layers for AlGaN/GaN high electron mobility transistors |
60 | Band alignment of Al2O3 with (-201) β-Ga2O3 |
61 | Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques |
62 | AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD |
63 | Using top graphene layer as sacrificial protection during dielectric atomic layer deposition |
64 | Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 |
65 | Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase |
66 | Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors |
67 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
68 | Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops |
69 | Effect of substrate on the growth and properties of MoS2 thin films grown by plasma-enhanced atomic layer deposition |
70 | Use of a passivation layer to improve thermal stability and quality of a phosphorene/AZO heterojunction diode |
71 | Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries |
72 | Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors |
73 | A high-density carbon fiber neural recording array technology |
74 | Band alignment of atomic layer deposited SiO2 and HfSiO4 with $(\bar{2}01)$ β-Ga2O3 |
75 | Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition |
76 | Superconducting Characteristics of NbN Films Deposited by Atomic Layer Deposition |
77 | Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions |
78 | Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition |
79 | Thermal Stability of Novel Hole-Selective Contacts for Silicon Wafer Solar Cells |
80 | Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors |
81 | Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy |
82 | Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor |
83 | Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties |
84 | Sub-7-nm textured ZrO2 with giant ferroelectricity |
85 | Investigation of hydrogen impurities in PE-ALD AlN thin films by IBA methods |
86 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |
87 | Lytic enzymes as selectivity means for label-free, microfluidic and impedimetric detection of whole-cell bacteria using ALD-Al2O3 passivated microelectrodes |
88 | Plasma-enhanced atomic layer deposition of titanium vanadium nitride |
89 | Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology |
90 | ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors |
91 | Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy |
92 | Damage evaluation in graphene underlying atomic layer deposition dielectrics |
93 | Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures |
94 | Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy |
95 | Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer |
96 | Evaluating the Impact of Thermal Annealing on Al2O3/c-Si Interface Properties by Non-Destructive Measurements |
97 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
98 | Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition |
99 | Supportless Platinum Nanotubes Array by Atomic Layer Deposition as PEM Fuel Cell Electrode |
100 | Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide |
101 | Interrogation of Electrochemical Properties of Polymer Electrolyte Thin Films with Interdigitated Electrodes |
102 | Atomic Layer Deposition of TiN/Al2O3/TiN Nanolaminates for Capacitor Applications |
103 | Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors |
104 | Obtaining low resistivity (~100 µΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor |
105 | Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors |
106 | New approach toward transparent and conductive ZnO by atomic layer deposition: Hydrogen plasma doping |
107 | Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution |
108 | Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries |
109 | Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
110 | Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources |
111 | Propagating gene expression fronts in a one-dimensional coupled system of artificial cells |
112 | Atomic Layer Deposition of the Solid Electrolyte LiPON |
113 | The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells |
114 | Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma |
115 | The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain |
116 | Efficient Modification of Metal Oxide Surfaces with Phosphonic Acids by Spray Coating |
117 | Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors |
118 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
119 | Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting |
120 | Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices |
121 | Performance of Samples with Novel SRF Materials and Growth Techniques |
122 | Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect |
123 | The Effects of an O2 Plasma on the Optical Properties of Atomic Layer Deposited ZnO |
124 | Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators |
125 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
126 | Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures |
127 | Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition |
128 | Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes |
129 | Growth of V2O5 Films for Battery Applications by Pulsed Chemical Vapor Deposition |
130 | Lithium-Iron (III) Fluoride Battery with Double Surface Protection |
131 | Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition |
132 | Comparisons of alumina barrier films deposited by thermal and plasma atomic layer deposition |
133 | Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition |
134 | High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition |
135 | AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants |
136 | Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium |
137 | Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition |
138 | Superconducting nanowire single-photon detectors fabricated from atomic-layer-deposited NbN |
139 | Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices |
140 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
141 | Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics |
142 | Tin Oxynitride Anodes by Atomic Layer Deposition for Solid-State Batteries |
143 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
144 | Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition |
145 | Antireflection In2O3 coatings of self-organized TiO2 nanotube layers prepared by atomic layer deposition |
146 | Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum |
147 | Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC) |
148 | Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition |
149 | Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition |
150 | Fully CMOS-compatible titanium nitride nanoantennas |
151 | Atomic layer deposition of GaN at low temperatures |
152 | Atomic layer deposition of titanium nitride for quantum circuits |
153 | Ultrathin Surface Coating Enables the Stable Sodium Metal Anode |
154 | Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures |
155 | Aluminum Oxide at the Monolayer Limit via Oxidant-Free Plasma-Assisted Atomic Layer Deposition on GaN |
156 | Plasma-Enhanced Atomic Layer Deposition of p-Type Copper Oxide Semiconductors with Tunable Phase, Oxidation State, and Morphology |
157 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
158 | AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD |
159 | Impact of Growth Conditions on the Phase Selectivity and Epitaxial Quality of TiO2 Films Grown by the Plasma-Assisted Atomic Layer Deposition |
160 | Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers |
161 | Stability of plasma-enhanced atomic layer deposited barrier films in biological solutions |
162 | Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique |
163 | Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries |
164 | Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3 |
165 | Impact of interface materials on side permeation in indirect encapsulation of organic electronics |
166 | In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics |
167 | The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition |
168 | TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films |
169 | Electrical Properties of Ultrathin Platinum Films by Plasma-Enhanced Atomic Layer Deposition |
170 | Annealing Effects on the Band Alignment of ALD SiO2 on (InxGa1-x)2O3 for x = 0.25-0.74 |
171 | Fiber-matrix interface reinforcement using Atomic Layer Deposition |
172 | Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition |
173 | ALD Protection of Li-Metal Anode Surfaces - Quantifying and Preventing Chemical and Electrochemical Corrosion in Organic Solvent |
174 | Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques |
175 | The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition |
176 | Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics |
177 | The role of plasma in plasma-enhanced atomic layer deposition of crystalline films |
178 | Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2 |
179 | Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry |
180 | Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition |
181 | Annealing behavior of ferroelectric Si-doped HfO2 thin films |
182 | Excellent surface passivation of crystalline silicon by ternary AlxMg1-xOy thin films |
183 | Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition |
184 | Field-effect passivation of Si by ALD-Al2O3: Second harmonic generation monitoring and simulation |
185 | The effects of layering in ferroelectric Si-doped HfO2 thin films |
186 | An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon |
187 | Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy |
188 | Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation |
189 | Design and development of nanoimprint-enabled structures for molecular motor devices |
190 | Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition |
191 | Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode |
192 | Investigation of AlGaN/GaN HEMTs Passivated by AlN Films Grown by Atomic Layer Epitaxy |
193 | Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy |
194 | Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device |
195 | Single-Cell Photonic Nanocavity Probes |
196 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
197 | Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
198 | Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers |
199 | Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces |
200 | Room temperature atomic layer deposition of Al2O3 and replication of butterfly wings for photovoltaic application |
201 | Sub-nanometer heating depth of atomic layer annealing |
202 | Effect of in situ hydrogen plasma on the ferroelectricity of hafnium zirconium oxide films |
203 | Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition |
204 | DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air |
205 | Thermal Interface Enhancement via Inclusion of an Adhesive Layer Using Plasma-Enhanced Atomic Layer Deposition |
206 | AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing |
207 | Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition |
208 | In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment |
209 | Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source |
210 | Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization |
211 | Molybdenum Disulfide Catalytic Coatings via Atomic Layer Deposition for Solar Hydrogen Production from Copper Gallium Diselenide Photocathodes |
212 | Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks |
213 | Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium |
214 | Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments |
215 | Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy |
216 | Three-Dimensional Solid-State Lithium-Ion Batteries Fabricated by Conformal Vapor-Phase Chemistry |
217 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
218 | Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films |
219 | Perspectives on future directions in III-N semiconductor research |
220 | Plasma enhanced atomic layer deposition of titanium nitride-molybdenum nitride solid solutions |
221 | Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition |
222 | Programmable on-chip DNA compartments as artificial cells |
223 | Practical Challenges of Processing III-Nitride/Graphene/SiC Devices |
224 | Self-Limiting Growth of GaN at Low Temperatures |
225 | Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3 |
226 | Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide |
227 | Plasma-enhanced atomic layer deposition of vanadium nitride |
228 | Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique |
229 | ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors |
230 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
231 | Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks |
232 | Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition |
233 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
234 | Biofilm prevention on cochlear implants |
235 | On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR |