In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 3, PP. 339-342, 2018
Date:
2018-01-23
Author Information
| Name | Institution |
|---|---|
| Quang Ho Luc | National Chiao Tung University |
| Kun Sheng Yang | National Chiao Tung University |
| Jia Wei Lin | National Chiao Tung University |
| Chia Chi Chang | National Chiao Tung University |
| Huy Binh Do | National Chiao Tung University |
| Sa Hoang Huynh | National Chiao Tung University |
| Minh Thien Huu Ha | National Chiao Tung University |
| Tuan Anh Nguyen | National Chiao Tung University |
| Yueh Chin Lin | National Chiao Tung University |
| Chenming Calvin Hu | University of California - Berkeley |
| Edward Yi Chang | National Chiao Tung University |
Films
Other Al2O3
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
CAS#: 7732-18-5
CAS#: 7664-41-7
CAS#: 7727-37-9
Plasma TiN
Film/Plasma Properties
Substrates
| InGaAs |
| InP |
Notes
| 1229 |