Publication Information

Title:
In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 39, NO. 3, PP. 339-342, 2018
Date:
2018-01-23

Author Information

Name Institution
Quang Ho LucNational Chiao Tung University
Kun Sheng YangNational Chiao Tung University
Jia Wei LinNational Chiao Tung University
Chia Chi ChangNational Chiao Tung University
Huy Binh DoNational Chiao Tung University
Sa Hoang HuynhNational Chiao Tung University
Minh Thien Huu HaNational Chiao Tung University
Tuan Anh NguyenNational Chiao Tung University
Yueh Chin LinNational Chiao Tung University
Chenming Calvin HuUniversity of California - Berkeley
Edward Yi ChangNational Chiao Tung University

Films

Other Al2O3



Film/Plasma Properties

Substrates

InGaAs
InP

Keywords

Notes

1229