2022 Year in Review

April 2023 Stats


The publication database currently has 1686 entries.
208 Films
282 Precursors
78 Dep Hardware Sets
254 Characteristics
93 Theses
5172 Authors

Use Advanced Search for more complex searches


2021 Year in Review
ALD Links
Contact Us
LinkedIn Profile

Recent Database Additions
Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis Experimental and theoretical determination of the role of ions in atomic layer annealing Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature

Quang Ho Luc Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Quang Ho Luc returned 7 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
2Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
3In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
4Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
5Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
6Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
7Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess

© 2014-2023 plasma-ald.com