Publication Information

Title:
Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures
Type:
Conference Proceedings
Info:
2016 China Semiconductor Technology International Conference (CSTIC)
Date:
2016-03-14

Author Information

Name Institution
Quang Ho LucNational Chiao Tung University
Po-Chun ChangNational Chiao Tung University
Huy Binh DoNational Chiao Tung University
Yueh Chin LinNational Chiao Tung University
Edward Yi ChangNational Chiao Tung University

Films

Plasma AlN

Hardware used: Unknown


Thermal HfO2

Hardware used: Unknown


Film/Plasma Properties

Substrates

Keywords

Passivation

Notes

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