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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures

Type:
Conference Proceedings
Info:
2016 China Semiconductor Technology International Conference (CSTIC)
Date:
2016-03-14
DOI:
http://dx.doi.org/10.1109/CSTIC.2016.7464089

Author Information

Name Institution
Quang Ho LucNational Chiao Tung University
Po-Chun ChangNational Chiao Tung University
Huy Binh DoNational Chiao Tung University
Yueh Chin LinNational Chiao Tung University
Edward Yi ChangNational Chiao Tung University

Films

Plasma AlN

Hardware used: Unknown
Deposition Temperature Range N/A

Thermal HfO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

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