About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures

Type:
Conference Proceedings
Info:
2016 China Semiconductor Technology International Conference (CSTIC)
Date:
2016-03-14
DOI:
http://dx.doi.org/10.1109/CSTIC.2016.7464089

Author Information

Name Institution
Quang Ho LucNational Chiao Tung University
Po-Chun ChangNational Chiao Tung University
Huy Binh DoNational Chiao Tung University
Yueh Chin LinNational Chiao Tung University
Edward Yi ChangNational Chiao Tung University

Films

Plasma AlN

Hardware used: Unknown
Deposition Temperature Range N/A

Thermal HfO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

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