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The publication database currently has 1636 entries.
203 Films Compositions
274 Precursors and Plasma Gases
77 Deposition Hardwares
251 Film and Plasma Characteristics
91 Theses
5041 Authors

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Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors Atomic layer deposition of ferroelectric Hf0.5Zr0.5O2 on single-layer, CVD-grown graphene Electron-enhanced atomic layer deposition of silicon thin films at room temperature
Search 1636 plasma ALD publications by:
203 Films Compositions
274 Precursors and Plasma Gases
77 Deposition Hardwares
251 Film and Plasma Characteristics

Edward Yi Chang Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Edward Yi Chang returned 8 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
2Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
3Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
4Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
5In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
6Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer
7Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
8Study on the electrical characteristics of in situ PEALD-passivated HfO2/In0.53Ga0.47As MOSCAP and MOSFET structures

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