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Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
Type:
Journal
Info:
IEEE Transactions on Electron Devices, Volume:62, Issue:12, 2015
Date:
2015-10-26
Author Information
| Name | Institution |
|---|---|
| Huy Binh Do | National Chiao Tung University |
| Quang Ho Luc | National Chiao Tung University |
| Minh Thien Huu Ha | National Chiao Tung University |
| Chenming Calvin Hu | University of California - Berkeley |
| Yueh Chin Lin | National Chiao Tung University |
| Edward Yi Chang | National Chiao Tung University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| InGaAs |
Notes
| Document text and references 1 and 3 suggest the AlN is a plasma film. |
| 516 |