Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
Type:
Conference Proceedings
Info:
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)
Date:
2016-08-22
Author Information
| Name | Institution |
|---|---|
| Yen-Ku Lin | National Chiao Tung University |
| Shuichi Noda | Tohoku University |
| Ruey-Bor Lee | National Chiao Tung University |
| Chia-Ching Huang | National Chiao Tung University |
| Quang Ho Luc | National Chiao Tung University |
| Seiji Samukawa | Tohoku University |
| Edward Yi Chang | National Chiao Tung University |
Films
Film/Plasma Properties
Substrates
| AlGaN |
Notes
| 935 |