Publication Information

Title:
Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess
Type:
Conference Proceedings
Info:
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)
Date:
2016-08-22

Author Information

Name Institution
Yen-Ku LinNational Chiao Tung University
Shuichi NodaTohoku University
Ruey-Bor LeeNational Chiao Tung University
Chia-Ching HuangNational Chiao Tung University
Quang Ho LucNational Chiao Tung University
Seiji SamukawaTohoku University
Edward Yi ChangNational Chiao Tung University

Films

Plasma AlN

Hardware used: Unknown


Plasma Al2O3


Film/Plasma Properties

Substrates

AlGaN

Keywords

Notes

935