Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer

Type:
Journal
Info:
ECS Transactions, 61 (4) 211-214 (2014)
Date:
2014-05-13
DOI:
http://dx.doi.org/10.1149/06104.0211ecst

Author Information

Name Institution
Shih-Chien LiuNational Chiao Tung University
Yuen-Yee WongNational Chiao Tung University
Yueh Chin LinNational Chiao Tung University
Edward Yi ChangNational Chiao Tung University

Films

Plasma AlN

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

Si3N4

Notes

1387